CN101937880A - 薄晶片处理结构及薄晶片接合及剥离的方法 - Google Patents

薄晶片处理结构及薄晶片接合及剥离的方法 Download PDF

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CN101937880A
CN101937880A CN 201010218125 CN201010218125A CN101937880A CN 101937880 A CN101937880 A CN 101937880A CN 201010218125 CN201010218125 CN 201010218125 CN 201010218125 A CN201010218125 A CN 201010218125A CN 101937880 A CN101937880 A CN 101937880A
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CN101937880B (zh
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余振华
许国经
陈承先
萧景文
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • Y10T428/1476—Release layer

Abstract

本发明提供一种薄晶片处理结构及薄晶片接合及剥离的方法，该薄晶片处理结构包含一半导体晶片；一剥离层，其可由施予能量予以剥离；一粘着层，其可由一溶剂予以移除，其中此剥离层由涂布或压合方式施加在载材上，此粘着层以涂布或压合方式施加在此半导体晶片上；以及此剥离层及此粘着层位于此半导体晶片及此载材之间并将其相互接合。此方法包含施加一剥离层至一载材上；施加一粘着层至一半导体晶片上；接合此载材及此半导体晶片；对此剥离层施予UV或激光的能量以剥离此剥离层；以及以溶剂清洁此半导体晶片表面以移除所有的粘着层残余物。本发明的晶片在剥离后的清洁表面，及在后结合工艺中具有良好的化学抵抗性。

Description

薄晶片处理结构及薄晶片接合及剥离的方法
技术领域
本发明涉及晶片处理，尤其涉及一种薄晶片处理结构及便于接合及剥离的方法。
背景技术
在半导体晶片处理工艺中，薄晶片背侧工艺需要暂时接合及剥离技术。晶片借由粘着层接合在刚硬的载材(carrier)上。经过研磨及/或其他后接合工艺(post-bonding processes)后，自此刚硬的载材上将晶片剥离。
传统剥离方法之一为在一光热转换层(light-to heat conversion layer)上使用激光以剥离载材，并接着剥除(peel off)粘着层。粘着材料为紫外光(UV)固化材料，例如不能由化学物剥除(stripped)，但可以物理方式剥落(peel off)的热固性聚合物。此方法于晶片剥离后会留有化学残余物。因此，此激光剥离层在背侧工艺时的化学抵抗性极低。
另一种传统方法为使用化学剥离(chemical release)。此方法是以化学方式溶解粘着层以剥离载材。此方法需要多孔的玻璃且容易导致交叉污染(cross contamination)。此方法的处理速度，例如每小时晶片产出率(wafers per hour，WPH)，相较于其他方法也较缓慢。
另一种传统方法为热滑动(thermal sliding)。此方法以热处理晶片及载材，接着使其滑动分开。此方法需要较高的剥离温度，且对内连线配置(interconnection scheme)造成不利的影响。
因此，业界需要的是新颖的结构及方法，来稳固晶片接合以确保剥离后的表面清洁，且在后工艺中有良好的化学抵抗性。
发明内容
为解决上述问题，本发明提供一种薄晶片处理结构，包括：一半导体晶片；一剥离层(release layer)，其可由施加能量予以剥离；一粘着层，其可由一溶剂予以移除；以及一载材；其中该剥离层以涂布或压合方式至少其一施加至该载材，该粘着层以涂布或压合方式至少其一施加至该半导体晶片，该半导体晶片及该载材相互接合，且该剥离层及该粘着层位于该半导体晶片及该载材之间。
本发明也提供一种方法，包括：以涂布或压合至少其一施加一剥离层于一载材上；以涂布或压合至少其一施加一粘着层至一半导体晶片上；接合该载材及该半导体晶片，且该剥离层及该粘着层位于该载材及该半导体晶片之间；施予能量至该剥离层，以剥离该载材；以及以一溶剂清洁该半导体晶片的一表面，以移除该粘着层的所有残余物。
本发明所揭示的优点包含晶片在剥离后的清洁表面，及在后结合工艺中具有良好的化学抵抗性。
为让本发明的上述和其他目的、特征、和优点能更明显易懂，下文特举出优选实施例，并配合所附附图，作详细说明如下：
附图说明
图1显示为依照本发明一实施例的薄晶片处理结构，用以便于接合及剥离。
图2为显示依照发明一实施例的便于薄晶片接合及剥离的方法。
其中，附图标记说明如下：
102～晶片104～粘着层
106～剥离层108～载材
具体实施方式
以下将详细讨论本发明各种实施例的制造及使用方法。然而值得注意的是，本发明所提供的许多可行的发明概念可实施在各种特定范围中。这些特定实施例仅用于举例说明本发明的制造及使用方法，但非用于限定本发明的范围。
本发明提供一种薄晶片处理结构及方法，以便于晶片工艺中的接合及剥离。在本发明所揭示的各种图示及实施例中，相似的标记用于表示相似的元件。
图1显示为依照本发明一实施例的薄晶片处理结构，用以便于接合及剥离。晶片102借由使用在其与载材108之间的两膜层(也即剥离层106及粘着层104)接合在载材108上。以涂布或压合工艺施加剥离层106至载材108上，接着以晶片边缘残余物移除法(edge bead removal，EBR)去除该剥离层相对于载材的外缘的0.1mm至3mm。
晶片边缘残余物移除法(EBR)去除于晶片边缘处堆积材料。在无任何其他处理下，过量的材料可堆积在晶片边缘处，且达膜层名义上厚度(nominal thickness)的数倍厚。这种情况会造成设备污染的风险。于化学晶片边缘残余物移除(chemical EBR)中，涂布后立即旋转晶片，溶剂会分散至晶片边缘。
以涂布或压合工艺施加粘着层104至晶片102上，且此粘着层104可由溶剂移除。例如在一优选实施例中，可使用热塑性聚合物(thermal plastic polymer)作为粘着层。载材108及晶片102为借由UV光或热能相互接合。
图2为显示依照发明一实施例的便于薄晶片接合及剥离的方法。于步骤202，以涂布或压合方式施加剥离层106至载材108上。在一实施例中，可使用旋转涂布。于步骤204，以涂布或压合方式施加粘着层104至晶片102上。于步骤206，晶片102及载材108相互接合，且剥离层106及粘着层104位于其间，并以热能或UV光固化。粘着剂可在接合之前先作预烘烤。于步骤208，晶片进行后接合工艺，例如研磨、晶片背侧工艺等。晶片背侧工艺可包含离子注入、退火、蚀刻、溅镀、蒸镀及/或金属化。
在进行后晶片工艺之后，对晶片进行剥离工艺，其包含剥离载材及后清洁(post cleaning)。于步骤210，施予能量(例如UV光或激光光)于剥离层106上以剥离载材108。在载材108剥离之前，薄晶片102可挂载于切割框上，以压合切割胶带(dicing tape lamination)。接着，以浸泡在溶剂中的化学品清洁晶片102表面，以移除粘着层104的所有残余物。例如，使用热塑性聚合物的粘着层可被溶剂以化学方式清洁。本领域普通技术人员可知本发明还具有许多其他变化实施例。
本发明所揭示的优点包含晶片在剥离后的清洁表面，及在后结合工艺中具有良好的化学抵抗性。
虽然本发明已以数个优选实施例揭示如上，然其并非用以限定本发明，任何本领域普通技术人员，在不脱离本发明的精神和范围内，当可作任意的更动与润饰。此外，本发明的范围不限定于现有或未来所发展的特定程序、机器、制造、物质的组合、功能、方法或步骤，其实质上进行与依照本发明所述的实施例相同的功能或达成相同的结果。因此，本发明的保护范围当视所附的权利要求所界定的范围为准。此外，每个权利要求建构成一独立的实施例，且各种权利要求及实施例的组合均介于本发明的范围内。

Claims (10)

1.一种薄晶片处理结构，包括：
一半导体晶片；
一剥离层，其可由施加能量予以剥离；
一粘着层，其可由溶剂予以移除；以及
一载材；
其中该剥离层以涂布或压合方式至少其一施加至该载材，该粘着层以涂布或压合方式至少其一施加至该半导体晶片，该半导体晶片及该载材相互接合，且该剥离层及该粘着层位于该半导体晶片及该载材之间。
2.如权利要求1所述的薄晶片处理结构，其中在以涂布或压合至少其一施加该剥离层至该载材上之后，对该剥离层进行晶片边缘残除物移除。
3.如权利要求2所述的薄晶片处理结构，其中该晶片边缘残除物移除工艺移除该剥离层相对于该载材的外缘的0.1mm至3mm。
4.如权利要求1所述的薄晶片处理结构，其中该剥离层由UV光或激光至少其一予以剥离。
5.如权利要求1所述的薄晶片处理结构，其中该粘着层为热塑性聚合物。
6.一种薄晶片接合及剥离的方法，包括：
以涂布或压合至少其一施加一剥离层于一载材上；
以涂布或压合至少其一施加一粘着层至一半导体晶片上；
接合该载材及该半导体晶片，且该剥离层及该粘着层位于该载材及该半导体晶片之间；
施予能量至该剥离层，以剥离该载材；以及
以一溶剂清洁该半导体晶片的一表面，以移除该粘着层的所有残余物。
7.如权利要求6所述的薄晶片接合及剥离的方法，其中该剥离层由施予UV光或激光而剥离。
8.如权利要求6所述的薄晶片接合及剥离的方法，其中粘着层为可由溶剂作化学清洁的热塑性聚合物。
9.如权利要求6所述的薄晶片接合及剥离的方法，其中该剥离层在以涂布或压合至少其一施加该剥离层至该载材上之后，对该剥离层进行晶片边缘残除物移除。
10.如权利要求9所述的薄晶片接合及剥离的方法，该晶片边缘残除物移除工艺移除该剥离层相对于该载材的外缘的0.1mm至3mm。
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