JP3830497B2 - 半導体ウエハの製造方法及び半導体装置の製造方法 - Google Patents
半導体ウエハの製造方法及び半導体装置の製造方法 Download PDFInfo
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- JP3830497B2 JP3830497B2 JP2004174721A JP2004174721A JP3830497B2 JP 3830497 B2 JP3830497 B2 JP 3830497B2 JP 2004174721 A JP2004174721 A JP 2004174721A JP 2004174721 A JP2004174721 A JP 2004174721A JP 3830497 B2 JP3830497 B2 JP 3830497B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L23/02—Containers; Seals
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- H01—ELECTRIC ELEMENTS
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Description
図1は、本発明に係る粘着シートに貼り付けられた基体片の製造方法の工程の一例を示す図である。板状のガラス2に、第1粘着シート1の粘着面を貼り付ける(図1(a))。次に、ダイシング装置等を用いてガラス2を刃3により切断し、複数のガラス片2aに分離する(図1(b))。この際、必要に応じて、気体噴き付け(例えば窒素ブロー)によって、ガラス切屑を除去するようにしてもよい。また、第1粘着シート1が充分な粘着力を維持できる限りにあっては、水や溶液等の洗浄液を用いた洗浄を行ってもよい。
図2は、本発明に係る粘着シートに貼り付けられた基体片の製造方法の工程の他の例を示す図である。板状のガラス2に、第1粘着シート1の粘着面を貼り付ける(図2(a))。ガラス2の表面(第1粘着シート1との貼付面とは反対側の面)には、例えば物理的蒸着法を用いて形成された赤外線遮断膜6が設けられている。次に、ダイシング装置等を用いて赤外線遮断膜6付きのガラス2を刃3により切断し、複数のガラス片2aに分離する(図2(b))。この際、実施の形態1と同様に、必要に応じて、気体噴き付けまたは溶液洗浄を行ってもよい。
このようにすることにより、赤外線遮断膜6に付着されているほとんどのゴミを除去することが可能である。
図3は、本発明に係る半導体ウエハの製造方法の工程を示す図である。まず、上述した実施の形態1に従って製造された、第2粘着シート4に複数のガラス片2aが貼り付けられた中間物を準備する(図3(a))。第2粘着シート4として、前述したように、例えば紫外線照射等の光照射により粘着力が低下する粘着シートを用いることができ、このような粘着シートを用いる場合には、後述する工程でのガラス片2aの剥脱処理を容易とするために、事前に光照射によって第2粘着シート4の粘着力を低下させておくことが好ましい。
図4は、本発明に係る半導体装置の製造方法の工程の一例を示す図である。図4(a)〜(d)の工程は、実施の形態3の図3(a)〜(d)の工程と同様であるため、同一部分には同一番号を付してそれらの説明を省略する。
図5は、本発明に係る半導体装置の製造方法の工程の他の例を示す図である。図5(a)〜(c)の工程は、実施の形態3の図3(a)〜(c)の工程と同様であるため、同一部分には同一番号を付してそれらの説明を省略する。
2 ガラス(基体)
2a ガラス片(基体片)
3 刃
4 第2粘着シート
5 ガラス切屑
6 赤外線遮断膜(膜)
7 第3粘着シート
11 ピン
12 吸着装置
13 接着層
14 半導体ウエハ
15 固体撮像装置
21 半導体素子
22 ケース部材
23 接着層
Claims (5)
- 第1粘着シートに貼り付けられた基体を複数の基体片に切断し、前記第1粘着シートに貼り付けられた面と反対側の前記基体片の面に第2粘着シートを貼り付け、前記第1粘着シートを前記基体片から剥離し、前記基体片を前記第2粘着シートから剥がして、機能素子を有する半導体ウエハに接着層を介して接着することを特徴とする半導体ウエハの製造方法。
- 第1粘着シートに貼り付けられた基体を複数の基体片に切断し、前記第1粘着シートに貼り付けられた面と反対側の前記基体片の面に第2粘着シートを貼り付け、前記第1粘着シートを前記基体片から剥離し、前記基体片を前記第2粘着シートから剥がして、機能素子を有する半導体ウエハに接着層を介して接着し、該半導体ウエハを切断することを特徴とする半導体装置の製造方法。
- 前記機能素子は受光部であることを特徴とする請求項1に記載の半導体ウエハの製造方法。
- 前記機能素子は受光部であることを特徴とする請求項2に記載の半導体装置の製造方法。
- 第1粘着シートに貼り付けられた基体を複数の基体片に切断し、前記第1粘着シートに貼り付けられた面と反対側の前記基体片の面に第2粘着シートを貼り付け、前記第1粘着シートを前記基体片から剥離し、前記基体片を前記第2粘着シートから剥がして、半導体素子を収納するケース部材の開口部に接着することを特徴とする半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004174721A JP3830497B2 (ja) | 2004-06-11 | 2004-06-11 | 半導体ウエハの製造方法及び半導体装置の製造方法 |
TW094119080A TWI274405B (en) | 2004-06-11 | 2005-06-09 | Manufacturing method for base piece made to adhere to adhesive sheet, manufacturing method for semiconductor wafer and manufacturing method for semiconductor device |
US11/149,520 US7438780B2 (en) | 2004-06-11 | 2005-06-09 | Manufacturing method for base piece made to adhere to adhesive sheet, manufacturing method for semiconductor wafer and manufacturing method for semiconductor device |
KR1020050049158A KR100714778B1 (ko) | 2004-06-11 | 2005-06-09 | 반도체 웨이퍼의 제조방법 및 반도체장치의 제조방법 |
EP05253596A EP1605521A3 (en) | 2004-06-11 | 2005-06-10 | Manufacturing method for a base piece made to adhere to an adhesive sheet, for a semiconductor wafer and for a semiconductor device |
CNB2005100896161A CN100501910C (zh) | 2004-06-11 | 2005-06-11 | 粘贴于粘着薄片的基体片、半导体晶片及装置的制造方法 |
KR1020060117211A KR100768870B1 (ko) | 2004-06-11 | 2006-11-24 | 점착 시트에 붙여진 기체편의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004174721A JP3830497B2 (ja) | 2004-06-11 | 2004-06-11 | 半導体ウエハの製造方法及び半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006171531A Division JP2006313921A (ja) | 2006-06-21 | 2006-06-21 | 粘着シートに貼り付けられた基体片の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005353921A JP2005353921A (ja) | 2005-12-22 |
JP3830497B2 true JP3830497B2 (ja) | 2006-10-04 |
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JP2004174721A Expired - Fee Related JP3830497B2 (ja) | 2004-06-11 | 2004-06-11 | 半導体ウエハの製造方法及び半導体装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7438780B2 (ja) |
EP (1) | EP1605521A3 (ja) |
JP (1) | JP3830497B2 (ja) |
KR (2) | KR100714778B1 (ja) |
CN (1) | CN100501910C (ja) |
TW (1) | TWI274405B (ja) |
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TWI549268B (zh) * | 2013-02-27 | 2016-09-11 | 精材科技股份有限公司 | 晶圓封裝方法 |
CN107738135A (zh) * | 2017-11-24 | 2018-02-27 | 深圳市精品诚电子科技有限公司 | 镜片加工排屑的方法 |
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USH208H (en) * | 1984-02-17 | 1987-02-03 | At&T Bell Laboratories | Packaging microminiature devices |
IT8921420V0 (it) | 1989-07-13 | 1989-07-13 | Telettra Spa | Sistema e circuito per il calcolo di trasformata discreta bidimensionale. |
JPH03151666A (ja) | 1989-11-08 | 1991-06-27 | Nec Corp | 固体撮像装置の製造方法 |
JPH0653586B2 (ja) * | 1990-03-08 | 1994-07-20 | 株式会社巴川製紙所 | 固体撮像装置用キャップガラスの加工方法 |
JP3165192B2 (ja) * | 1991-03-28 | 2001-05-14 | 株式会社東芝 | 半導体集積回路装置の製造方法 |
JPH0541461A (ja) * | 1991-08-02 | 1993-02-19 | Nippon Electric Glass Co Ltd | 接着剤付ガラス小板の製造方法 |
US5591290A (en) * | 1995-01-23 | 1997-01-07 | Wallace Computer Services, Inc. | Method of making a laminate having variable adhesive properties |
FR2764111A1 (fr) * | 1997-06-03 | 1998-12-04 | Sgs Thomson Microelectronics | Procede de fabrication de boitiers semi-conducteurs comprenant un circuit integre |
JPH1140520A (ja) * | 1997-07-23 | 1999-02-12 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
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JP3455762B2 (ja) | 1999-11-11 | 2003-10-14 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
JP3906962B2 (ja) * | 2000-08-31 | 2007-04-18 | リンテック株式会社 | 半導体装置の製造方法 |
JP2003086540A (ja) | 2001-09-07 | 2003-03-20 | Toshiba Corp | 半導体装置の製造方法及びその製造装置 |
JP3881888B2 (ja) | 2001-12-27 | 2007-02-14 | セイコーエプソン株式会社 | 光デバイスの製造方法 |
JP2003224085A (ja) * | 2002-01-30 | 2003-08-08 | Disco Abrasive Syst Ltd | 半導体チップのピックアップ方法 |
JP2004040050A (ja) | 2002-07-08 | 2004-02-05 | Toshiba Corp | 半導体装置の製造方法及び製造装置 |
JP2004296453A (ja) | 2003-02-06 | 2004-10-21 | Sharp Corp | 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法 |
JP4204368B2 (ja) | 2003-03-28 | 2009-01-07 | シャープ株式会社 | 光学装置用モジュール及び光学装置用モジュールの製造方法 |
JP4236594B2 (ja) | 2004-01-27 | 2009-03-11 | シャープ株式会社 | 光学装置用モジュール及び光学装置用モジュールの製造方法 |
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2004
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- 2005-06-09 KR KR1020050049158A patent/KR100714778B1/ko not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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EP1605521A3 (en) | 2007-08-08 |
CN1716533A (zh) | 2006-01-04 |
JP2005353921A (ja) | 2005-12-22 |
EP1605521A2 (en) | 2005-12-14 |
KR20060132768A (ko) | 2006-12-22 |
US20050274451A1 (en) | 2005-12-15 |
US7438780B2 (en) | 2008-10-21 |
KR20060048298A (ko) | 2006-05-18 |
KR100768870B1 (ko) | 2007-10-19 |
CN100501910C (zh) | 2009-06-17 |
KR100714778B1 (ko) | 2007-05-04 |
TWI274405B (en) | 2007-02-21 |
TW200601504A (en) | 2006-01-01 |
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