CN101927976A - Infrared detector with micro-bridge structure and manufacturing method thereof - Google Patents

Infrared detector with micro-bridge structure and manufacturing method thereof Download PDF

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Publication number
CN101927976A
CN101927976A CN 200910153649 CN200910153649A CN101927976A CN 101927976 A CN101927976 A CN 101927976A CN 200910153649 CN200910153649 CN 200910153649 CN 200910153649 A CN200910153649 A CN 200910153649A CN 101927976 A CN101927976 A CN 101927976A
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layer
deposited
micro
infrared
metallic reflector
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CN101927976B (en
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池积光
钱良山
康晓旭
姜利军
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ZHEJIANG DALI TECHNOLOGY Co Ltd
Shanghai IC R&D Center Co Ltd
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ZHEJIANG DALI TECHNOLOGY Co Ltd
Shanghai Integrated Circuit Research and Development Center Co Ltd
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Abstract

The invention relates to an infrared detector with a micro-bridge structure, which belongs to the technical field of micro-electromechanics, and comprises a silicon substrate as a read-out circuit of the infrared detector; a metal reflecting layer deposited on the silicon substrate; a dielectric layer which is deposited in a groove of the metal reflecting layer and has the height being consistent with that of the metal reflecting layer; a sacrifice layer and a first release protection layer used as protection of release of the sacrifice layer which are deposited on the dielectric layer and the metal reflecting layer and form through holes by lithography and etching; a copper or tungsten pier which is deposited in the through hole of the sacrifice layer; a metal electrode deposited on the copper or tungsten pier and the first release protection layer; and a sensitive material detecting layer which is deposited on the metal electrode and the first release protection layer. A Cu-column micro-bridge structure is manufactured by using the damascene process, and a flat micro-bridge plane is manufactured by introducing the chemical mechanical polishing process (CMP), thereby being conductive to the follow-up process and improving the performances.

Description

Infrared detector with micro-bridge structure and manufacture method
Technical field
The invention belongs to field of micro electromechanical technology, be specifically related to utilize copper wiring technology in Damascus to make the process of infrared detector focal plane array.
Background technology
Micro electronmechanical (MEMS) product has been widely used in the daily life, comprises safe automobile air bag accelerometer, automobile and medical pressure sensor, micro-microphone, inkjet printing magnetic head and the non-Infrared Detectors of non-refrigeration etc.The MEMS product generally comprises MEMS structure and CMOS treatment circuit part.Because MEMS and CMOS processing compatibility are poor, so early stage being difficult to realizes producing on a large scale.Because the market demand of MEMS product enlarges gradually, the notion of CMOS-MEMS is proposed by the people gradually in recent years.CMOS-MEMS utilizes CMOS fabrication techniques periphery to read and signal processing circuit, makes the structure of sensor and micro mechanical system then on cmos circuit, but the compatibility issue of technology is the key of puzzlement CMOS-MEMS technology all the time.On the other hand, the MEMS technique platform is not also realized standardization and industrialization as semicon industry now, most manufacturing platforms are all set up for certain product, be not suitable for product foundry widely, thus the technical experience of using for reference and introduce semicon industry to the manufacturing development of MEMS product with highly beneficial.
Infrared Detectors generally is to adopt integrated MEMS micro-bridge structure on cmos circuit, utilizes sensitive material detecting layer (being generally non-crystalline silicon or oxidation machine) absorption infrared ray and converts it into the signal of telecommunication, realizes the thermal imaging function in view of the above.The main developing direction of current Infrared Detectors is improved the image resolution ratio of detector for reducing the pixel physical dimension and increasing array sizes, enlarges the range of application of Infrared Detectors, and the level of its MEMS manufacturing process has become the principal element of restriction properties of product.The micro-bridge structure of Infrared Detectors narrows down to now 17*17 micron pixel structure from early stage 100*100 micron, for example " 17 microns focal plane Infrared Detectors of BAE company " (SPIE (SPIE) infrared technique in 2009 and and use discussion, SPIE volume 7298,72980P-1～72980P-6 page or leaf, Richard Blackwell. etc., " 17um Microbolometer FPA Technology at BAESystems; " Proceedings of SPIE conference on infrared technology andapplications XXXV, 2009.SPIE Vol.7298, pp.1-6).The stress that little pixel structure can reduce film does not match and strengthens detector sensitivity and resolution ratio; In addition, for identical array scale, little pixel structure means littler detector and Lens, thereby can dwindle the weight and the size of infrared thermal imagery instrument system, increases the portability of thermal infrared imager.
The reduced image elemental size is had higher requirement to the MEMS processing technology.For traditional infrared detector with micro-bridge structure, general aluminium (Al) post that adopts supports micro-bridge structure, for example " amorphous silicon technology is in the development of CEA/LETi " (SPIE (SPIE) photodetector material in 2002 and equipment, SPIE volume 4650,138～149 pages, E MOTTIN. etc., " Amorphous silicontechnology improvement at CEA/LETI; " Proceedings of SPIE PhotodetectorMaterials and Devices VII, 2002.SPIE Vol.4650, pp.138-149), this structure is had relatively high expectations to aluminium filling effect and etching selection ratio in through hole, in addition outer aluminium pole supports that also to exist resistivity big and be prone to problem such as electromigration, thereby influences the overall performance of Infrared Detectors; Therefore, how to use for reference conventional semiconductor process modification Infrared Detectors process for machining and manufacturing, solve its MEMS artistic face planarization problem etc., and increase substantially finished product rate and reliability, become the technical problem that industry needs to be resolved hurrily.
Summary of the invention
In order to improve the processing technology level of Infrared Detectors, improve the processing compatibility of its CMOS and MEMS part, the present invention proposes a kind of Cu post infrared detector structure and manufacture method based on Damascus technics.
The present invention solves the technical scheme that its technical problem adopts:
A kind of infrared detector with micro-bridge structure is characterized in that comprising:
Silicon substrate is as the reading circuit of Infrared Detectors;
Metallic reflector is deposited on the described silicon substrate;
Dielectric layer is deposited in the groove of metallic reflector, and the height of this dielectric layer is consistent with the height of this metallic reflector;
Sacrifice layer and the first release guard layer that is used for as the releasing sacrificial layer protection are deposited on described dielectric layer and the metallic reflector, and chemical wet etching forms through hole;
Copper or tungsten bridge pier are deposited in the through hole of sacrifice layer;
Metal electrode is deposited on copper or tungsten bridge pier and the first release guard layer;
The sensitive material detecting layer is deposited on the metal electrode and the first release guard layer.
Support micro-bridge structure with copper or tungsten post in infrared detector structure provided by the invention, help realizing CMP technology, the planarization of microbridge plane helps following process.
Further, described this Infrared Detectors also comprises:
Dielectric insulation layer is deposited on metal electrode and the sensitive material detecting layer;
The INFRARED ABSORPTION enhancement layer is deposited on the dielectric insulation layer.
The second release guard layer, the second release guard layer surround this sensitive material detecting layer and this metal electrode, in order to protection sensitive material detecting layer and metal electrode.
Metallic reflector of the present invention is a high infrared reflection rate metallic film, and metal is selected from aluminium, gold, silver or copper.
Sacrificial layer material of the present invention is selected from non-crystalline silicon, polysilicon or the silica with the CMOS process compatible.
The material of dielectric layer of the present invention, dielectric insulation layer, the first release guard layer and the second release guard layer is silica, silicon oxynitride, silicon nitride and carborundum, or
The silicon oxynitride of non-stoichiometric, silicon nitride and carborundum, or
Be mixed with the above-mentioned material of boron, phosphorus.
Metal electrode of the present invention is selected from the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum or the tantalum nitride electrode of titanium electrode or stacked on top of one another.Tantalum nitride (TaN is) Cu diffusion barrier material, metal electrode can also be the composite bed of tantalum nitride/tantalum (TaN/Ta), in addition, than the resistivity that can change the TaN film, helped the TaN film of INFRARED ABSORPTION by the Ta/N element in the adjusting TaN film most;
Sensitive material detecting layer of the present invention is non-crystalline silicon or vanadium oxide, and it can realize with CMOS technology well compatible.
INFRARED ABSORPTION enhancement layer of the present invention is Titanium, tantalum, platinum or is metal compound films such as titanium nitride, tantalum nitride.The square resistance of adjusting film by the N constituent content that changes film makes its INFRARED ABSORPTION effect reach best about 377ohm/.
Another purpose of the present invention provides the manufacture method such as above-mentioned Infrared Detectors, may further comprise the steps:
A. on silicon substrate, form metallic reflector and graphical;
B. on metallic reflector, form dielectric layer, and realize its planarization;
C. etching dielectric layer and be parked in the metallic reflector upper surface guarantees that the height of dielectric layer is consistent with the height of metallic reflector;
D. deposition of sacrificial layer and chemical-mechanical planarization stop layer;
E. etching microbridge through hole, plated metal copper/tungsten and chemically mechanical polishing planarization;
F. deposit metal electrodes layer and detector sensitive material layer are also graphical, metallization medium layer;
G. deposit INFRARED ABSORPTION enhancement layer and graphical, deposition release guard layer;
H. graphical micro-bridge structure, releasing sacrificial layer obtains unsettled micro-bridge structure;
After the planarization that realizes dielectric layer, the end point determination of employing dry etching is come the etching medium and is parked in the surface of this metallic reflector, and is consistent with the height of this metallic reflector with the height of guaranteeing this dielectric layer.
Manufacture method of the present invention utilizes CMOS copper wiring technology in Damascus to make micro-bridge structure.Damascus technics is the maturation process in the integrated circuit interconnection technology, can effectively reduce the interconnection resistance value, reduce the power consumption of chip, (can set up Li Jiayuan etc. referring to data, multilayer interconnection new technology in the preparation of VLSI chip, " semiconductor technology ", 2006.11), " utilize Damascus technics to prepare the performance that Cu rod structure Infrared Detectors not only can improve the working ability of its MEMS part but also improve Infrared Detectors ".
The effect that the present invention is useful is:
(1), the present invention utilizes Damascus copper technology to make the processing and manufacturing ability that the very big degree of Infrared Detectors promotes Infrared Detectors, for the processing of small size pixel structure provides processing method, CMOS and MEMS processing compatibility partly in the detector have also been improved in addition.
(2), infrared detector structure of the present invention can introduce CMP process (CMP) in the processing of Infrared Detectors, realizes the microbridge plane of planarization, helps the carrying out of subsequent technique.
(3), the present invention utilizes the Cu post to support micro-bridge structure, and is better with respect to traditional Al column performance, bigger than the 1.75*10-8ohm.m of Cu mainly due to the resistivity 2.83*10-8ohm.m of Al, and electromigration easily takes place in Al.
(1), micro-bridge structure of the present invention additional INFRARED ABSORPTION enhancement layer, when pixel dimension is dwindled the INFRARED ABSORPTION effect that can obviously improve micro-bridge structure when causing the INFRARED ABSORPTION effective area to reduce.
Description of drawings
Figure 1 shows that the schematic diagram of infrared detector with micro-bridge structure in the embodiment of the invention;
Fig. 2 is the profile of infrared detector with micro-bridge structure in the embodiment of the invention;
Fig. 3 (a) and (b), (c), (d), (e), (f), (g), (h), (i), (j), (k), (l), (m), (n), (o) are for making micro-bridge structure preparation method schematic diagram of the present invention.
The specific embodiment
The invention will be further described below in conjunction with accompanying drawing:
Please referring to Fig. 1 and Fig. 2, present embodiment proposes a kind of Infrared Detectors, is applicable to the safety detection of electric power networks, the detection of forest fire alarm and the places such as detection of human body temperature.The invention micro-bridge structure can be widely used in non-refrigerated infrared detector, gas detector, little heating platform, micro-electro-mechanical systems such as the infrared emitter device device of unifying.
Infrared Detectors comprises reading circuit 11, first dielectric layer 121, metallic reflector 13, second dielectric layer 122, sacrifice layer 14, copper post 16, the first release guard layer 151, metal electrode 17, sensitive material detecting layer 18, dielectric insulation layer 19, infrared absorption layer 20, the second release guard layer 152 successively.
Infrared Detectors silicon substrate of the present invention is as the reading circuit of Infrared Detectors;
Metallic reflector 13 is deposited on the described silicon substrate;
First dielectric layer 121 is deposited in the groove of metallic reflector 13, and the height of this dielectric layer is consistent with the height of this metallic reflector;
Sacrifice layer 14 and the first release guard layer 151 that is used for as the releasing sacrificial layer protection are deposited on described first dielectric layer 121 and the metallic reflector 13, and chemical wet etching forms through hole;
Copper bridge pier 16 is deposited in the through hole of sacrifice layer 14;
Metal electrode 17 is deposited on copper or tungsten bridge pier and the release guard layer;
Sensitive material detecting layer 18 is deposited on the metal electrode 17 and the first release guard layer 151.
The reading circuit 11 of Infrared Detectors is made by the CMOS technology of standard, and the metallic reflector 13 of Infrared Detectors is realized being electrically connected with reading circuit 11 by the tungsten through hole.Metallic reflector 13 is deposited on first dielectric layer 121, uses technologies such as photoetching, etching to realize metallic reflector 13 patterns, and its effect is the reflecting layer as infrared spectrum, improves the INFRARED ABSORPTION of Infrared Detectors, thereby improves the responsiveness of Infrared Detectors.In the present embodiment, metallic reflector 13 is formed by the physical vapor deposition (PVD) technology, and this metal material can be metallic films such as aluminium, tantalum, titanium.
Second dielectric layer 122 is deposited on the metallic reflector 13, forms medium (ILD) between inter-level dielectric (IMD) and line, utilizes chemically mechanical polishing (CMP) technology to realize the planarization on dielectric layer 122 surfaces again.When realizing 122 planarizations of second dielectric layer, make the height of the height of second dielectric layer 122 near metallic reflector 13 as far as possible.Adopt the end point determination of dry etching to realize etching dielectric layer 122 then and stop to metallic reflector 13 upper surfaces.The effect of second dielectric layer 122 is the planarizations that realize metallic reflector 13 surfaces, makes the easier realizations of technology such as follow-up photoetching of detector and etching.In the present embodiment, second dielectric layer 122 forms by strengthening PCVD (PECVD) technology, and this dielectric layer material can be medium insulating materials such as silica, silicon oxynitride, silicon nitride.
Copper post 16 uses Damascus copper wiring technique to realize.Deposition of sacrificial layer 14 and release guard layer 151 on the metallic reflector 13 and second dielectric layer 122 utilize photoetching and etching to realize the pattern filling of copper post 16.Use the copper electroplating technology (ECP) and chemically mechanical polishing (CMP) technology of standard in the copper wiring technique of Damascus then, the filling of finishing copper post 16 is with graphical.Copper post 16 has both discharged the supporting construction of back microbridges as sacrifice layer 14, also as the electric connection structure of microbridge and metallic reflector 13.In the present embodiment, the material of sacrifice layer 14 is a non-crystalline silicon, forms by strengthening PCVD (PECVD) technology, and the reacting gas of releasing sacrificial layer 14 non-crystalline silicons is an xenon difluoride; When can being xenon difluoride release non-crystalline silicon, the material of release guard layer 151 selects than higher silica or silicon nitride; form by strengthening PCVD (PECVD) technology; both as the release guard layer, also as the layer that stops of chemically mechanical polishing (CMP) copper.
Metal electrode 17 is deposited on the first release guard layer 151 and the copper post 16, as the electrical connection material of sensitive material and copper post 16.In the present embodiment, the material of metal electrode 17 can be the metallic films such as lamination of lamination, tantalum and the tantalum nitride of the titanium, titanium nitride, tantalum, tantalum nitride, titanium and the titanium nitride that are formed by the physical vapor deposition (PVD) technology.Use photoetching and dry etching to realize the graphical of metal electrode 17.
Sensitive material detecting layer 18 is deposited on the metal electrode 17, as infrared-sensitive material.In the present embodiment, sensitive material can be the thin-film material that non-crystalline silicon or vanadium oxide etc. have higher temperature-coefficient of electrical resistance.Non-crystalline silicon forms by strengthening PCVD (PECVD) technology, and vanadium oxide is formed by the physical vapor deposition (PVD) technology.
On the sensitive material, deposition medium insulating barrier 19, infrared absorption layer 20 and the second release guard layer 152 successively.In the present embodiment, infrared absorption layer 20 materials can be that titanium nitride and tantalum nitride etc. have the very material of high IR absorptivity as the primary structure that improves Infrared Detectors INFRARED ABSORPTION efficient, are formed by the physical vapor deposition (PVD) technology; Dielectric insulation layer 19 is as the insulation system between sensitive material and the infrared absorption layer 20, but insulating materials such as silica and silicon nitride form by strengthening PCVD (PECVD) technology; Release guard layer 152 is selected than higher silica or silicon nitride in the time of can being xenon difluoride release non-crystalline silicon as the protective material of releasing sacrificial layer 14, forms by strengthening PCVD (PECVD) technology.
Utilize photoetching and dry etching to make the microbridge figure of detector at last, releasing sacrificial layer 14 non-crystalline silicons in xenon difluoride gas form the micro-bridge structure 30 of unsettled Infrared Detectors.
Fig. 3 is the manufacture method flow chart of the Infrared Detectors of preferred embodiment of the present invention.
The first step, shown in Fig. 3 (a), plated metal reflecting layer 13 and graphical on first dielectric layer 121, second metallization medium layer 122 and the chemically mechanical polishing (CMP) then, the thickness of second dielectric layer 122 after the polishing is higher than metallic reflector 13.
In second step, shown in Fig. 3 (b), the end point determination of employing dry etching realizes etching dielectric layer 122 and stops to metallic reflector 13 upper surfaces.
The 3rd step, shown in Fig. 3 (c), deposition of sacrificial layer 14 on the metallic reflector 13 and second dielectric layer 122, the thickness of sacrifice layer 14 is generally about 2 microns.
The 4th step, shown in Fig. 3 (d), the deposition first release guard layer 151 on sacrifice layer 14.
The 5th step, shown in Fig. 3 (e), the graphical first release guard layer 151.
The 6th step, shown in Fig. 3 (f), graphical sacrifice layer 14.
The 7th step, shown in Fig. 3 (g), use Damascus copper wiring technique electro-coppering, the minimum point of copper must be higher than the first release guard layer 151.
In the 8th step, shown in Fig. 3 (h), chemically mechanical polishing (CMP) copper is parked in the upper surface of the first release guard layer 151.
In the 9th step, shown in Fig. 3 (i), deposit metal electrodes 17 is also graphical.
In the tenth step, shown in Fig. 3 (j), deposition sensitive material detecting layer 18 is also graphical.
The 11 step, shown in Fig. 3 (k), deposition medium insulating barrier 19.
In the 12 step, shown in Fig. 3 (l), deposition infrared absorption layer 20 is also graphical.
In the 13 step, shown in Fig. 3 (m), deposit the second release guard layer 152.
In the 14 step, shown in Fig. 3 (n), etch micro-bridge structure 30 with the method that forms figure.
The 15 step is shown in Fig. 3 (o), by removing sacrifice layer 14 releases and forming unsettled micro-bridge structure 30.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.

Claims (10)

1. infrared detector with micro-bridge structure is characterized in that comprising:
Silicon substrate is as the reading circuit of Infrared Detectors;
Metallic reflector is deposited on the described silicon substrate;
Dielectric layer is deposited in the groove of metallic reflector, and the height of this dielectric layer is consistent with the height of this metallic reflector;
Sacrifice layer and the first release guard layer that is used for as the releasing sacrificial layer protection are deposited on described dielectric layer and the metallic reflector, and chemical wet etching forms through hole;
Copper or tungsten bridge pier are deposited in the through hole of sacrifice layer;
Metal electrode is deposited on copper or tungsten bridge pier and the first release guard layer;
The sensitive material detecting layer is deposited on the metal electrode and the first release guard layer.
2. infrared detector with micro-bridge structure according to claim 1 is characterized in that, this Infrared Detectors also comprises:
Dielectric insulation layer is deposited on metal electrode and the sensitive material detecting layer;
The INFRARED ABSORPTION enhancement layer is deposited on the dielectric insulation layer.
The second release guard layer, the second release guard layer surround this sensitive material detecting layer and this metal electrode, in order to protection sensitive material detecting layer and metal electrode.
3. infrared detector with micro-bridge structure according to claim 1 is characterized in that described metallic reflector is a high infrared reflection rate metallic film, and metal is selected from aluminium, gold, silver or copper.
4. Infrared Detectors according to claim 1 is characterized in that sacrificial layer material is selected from non-crystalline silicon, polysilicon or the silica with the CMOS process compatible.
5. Infrared Detectors according to claim 2 is characterized in that the material of dielectric layer, dielectric insulation layer, the first release guard layer and the second release guard layer is silica, silicon oxynitride, silicon nitride and carborundum, or
The silicon oxynitride of non-stoichiometric, silicon nitride and carborundum, or
Be mixed with the above-mentioned material of boron, phosphorus.
6. Infrared Detectors according to claim 1 is characterized in that described metal electrode is selected from the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum or the tantalum nitride electrode of titanium electrode or stacked on top of one another.
7. Infrared Detectors according to claim 1 is characterized in that, the sensitive material detecting layer is non-crystalline silicon or vanadium oxide.
8. Infrared Detectors according to claim 2 is characterized in that, the INFRARED ABSORPTION enhancement layer is Titanium, tantalum, platinum or is metal compound films such as titanium nitride, tantalum nitride.
9. the manufacture method of an Infrared Detectors as claimed in claim 2 is characterized in that, may further comprise the steps:
A. on silicon substrate, form metallic reflector and graphical;
B. on metallic reflector, form dielectric layer, and realize its planarization;
C. etching dielectric layer and be parked in the metallic reflector upper surface guarantees that the height of dielectric layer is consistent with the height of metallic reflector;
D. deposition of sacrificial layer and chemical-mechanical planarization stop layer;
E. etching microbridge through hole, plated metal copper/tungsten and chemically mechanical polishing planarization;
F. deposit metal electrodes layer and detector sensitive material layer are also graphical, metallization medium layer;
G. deposit INFRARED ABSORPTION enhancement layer and graphical, deposition release guard layer;
H. graphical micro-bridge structure, releasing sacrificial layer obtains unsettled micro-bridge structure;
After the planarization that realizes dielectric layer, the end point determination of employing dry etching is come the etching medium and is parked in the surface of this metallic reflector, and is consistent with the height of this metallic reflector with the height of guaranteeing this dielectric layer.
10. the manufacture method of Infrared Detectors according to claim 9 is characterized in that, this manufacture method utilizes CMOS copper wiring technology in Damascus to make micro-bridge structure.
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