CN105206635A - Dual-layer hybrid imaging detector pixel structure capable of increasing transmissivity and preparation method thereof - Google Patents
Dual-layer hybrid imaging detector pixel structure capable of increasing transmissivity and preparation method thereof Download PDFInfo
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- CN105206635A CN105206635A CN201510546243.XA CN201510546243A CN105206635A CN 105206635 A CN105206635 A CN 105206635A CN 201510546243 A CN201510546243 A CN 201510546243A CN 105206635 A CN105206635 A CN 105206635A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000002355 dual-layer Substances 0.000 title abstract 3
- 230000006698 induction Effects 0.000 claims abstract description 301
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims description 85
- 239000004065 semiconductor Substances 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 230000001939 inductive effect Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- 239000011800 void material Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000005728 strengthening Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 230000005540 biological transmission Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 238000003701 mechanical milling Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006854 communication Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
Abstract
The invention provides a dual-layer hybrid imaging detector pixel structure capable of increasing transmissivity and a preparation method thereof. The dual-layer hybrid imaging detector pixel structure comprises a substrate, a visible light induction region located at the lower surface of the substrate, a metal interconnection structure and an infrared induction region located at the upper surface of the substrate; the infrared induction region includes a first infrared induction structure, a second infrared induction structure, a contact trench structure, a supporting component and a dielectric layer; the first infrared induction structure and the second infrared induction structure are both connected with the contact trench structure; the contact trench structure is connected with the metal interconnection structure; electric signals formed by the first infrared induction structure and the second infrared induction structure are transmitted to the metal interconnection structure through the contact trench structure; a first cavity located below the first infrared induction structure is formed in the substrate; a second cavity is formed between the second infrared induction structure and the first infrared induction structure; a third cavity is formed between the supporting component and the second infrared induction structure; first release holes are formed in the first infrared induction structure; and second release holes are formed at the top of the supporting component.
Description
Technical field
The present invention relates to microelectronics technology, the double-deck visible red being specifically related to the enhancing of a kind of transmission performance mixes imaging detector pixel structure and preparation method thereof outward.
Background technology
Along with development that is industrial and living standard, simple infrared imaging or simple visual light imaging can not satisfy the demands, have more broadband imaging technique and more and more receive publicity, particularly can simultaneously to visible ray and infrared light activated imaging technique.
But, in existing mixing image device, lens forming two light paths are adopted to carry out induction image forming to visible ray and infrared light respectively, computer processing system is finally adopted to be synthesized together, separation due to light path causes formed infrared image part and visible images part to produce larger deviation of the alignment, has a strong impact on image quality.
Due to microelectromechanical systems (MEMS) technology have small, intelligent, can perform, the plurality of advantages such as accessible site, processing compatibility are good, cost is low, if hybrid imaging technology can be combined with microelectric technique, work out the hybrid imaging technology of microelectronics technology, the problem that the deviation of the alignment of existing infrared image and visible images is large can be avoided.
Summary of the invention
In order to overcome above problem, the double-deck visible red that the present invention aims to provide the enhancing of a kind of transmission performance mixes imaging detector pixel structure and preparation method thereof outward, utilize double-deck induction structure to improve the absorptivity to light, by increase space strengthen through, reduce light loss, thus improve image quality.
To achieve these goals, the double-deck visible red that the invention provides transmission performance enhancing mixes imaging detector pixel structure outward, and it comprises:
Semi-conductive substrate, as visible ray filter course;
Visible ray induction region, is positioned at described Semiconductor substrate lower surface, and described visible ray induction region comprises visible ray inductive means and contact component;
Metal interconnected, be positioned at described Semiconductor substrate upper surface;
Infrared induction region, is positioned at Semiconductor substrate upper surface, and has double-deck infrared induction structure, and it comprises:
First cavity, is positioned in described Semiconductor substrate; The described metal interconnected described Semiconductor substrate upper surface being positioned at described first cavity both sides;
Separator, is positioned at the described semiconductor substrate surface in described metal interconnected outside;
Dielectric layer, is positioned on the described metal interconnected and described separator of part;
Contact trench structure, is positioned at the described metal interconnected upper surface of described first cavity both sides;
First infrared induction structure, is covered on described first cavity, and described first infrared induction structural edge is connected with described contact trench structure; Described first infrared induction structure has the first release aperture;
Second infrared induction structure, is positioned on described first infrared induction structure, and described second infrared induction structural edge is connected with described contact trench structure; The second cavity is formed between described second infrared induction structure and described first infrared induction structure;
Support component, is positioned at the periphery of described second infrared induction structure and does not contact with described second infrared induction structure; The edge of described support component has supported hole, and the top of described support component has the second release aperture; Be positioned on the described dielectric layer outside described contact trench structure bottom described supported hole; Between described support component and described second infrared induction structure, there is the 3rd cavity, and between described second infrared induction structure and described support component, there is the space of connection; The inner surface of described support component has infrared reflective material or whole described support component is infrared reflective material;
Wherein, visible ray and infrared light are injected from described Semiconductor substrate lower surface, and by described visible ray induction region, the described visible ray of part is absorbed by described visible ray inductive means; After described Semiconductor substrate filters out visible ray, after Semiconductor substrate described in infrared light, enter described first cavity, then enter described first infrared induction structure and the described infrared light of part is absorbed by described first infrared induction structure; Do not continued across described second cavity by the infrared light that described first infrared induction structure absorbs and enter described second infrared induction structure and the described infrared light of part is absorbed by described second infrared induction structure; Do not entered described 3rd cavity by the infrared light that described second infrared induction structure absorbs, then reflected back into described second infrared induction structure by described infrared reflective material, and then absorbed by described infrared induction structure.
Preferably, described first cavity sidewalls surface has infrared reflecting layer, for strengthening the absorption to infrared light, prevents described infrared light from inciding in the sidewall of described first cavity.
Preferably, the bottom of described first infrared induction structure and the top of described contact trench structure flush; Be connected with described contact trench structural top bottom described second infrared induction structural edge, the lower surface of described second infrared induction structural top is higher than described first infrared induction structure upper surface; Described second cavity is formed between the upper surface of described first infrared induction structure and the side wall inner surfaces of described second infrared induction structure and top thereof.
Preferably, described first infrared induction structure comprises release guard layer on first time release guard layer, the first infrared induction parts, the first electrode layer and first; Described second infrared induction structure comprises release guard layer on second time release guard layer, the second infrared induction parts, the second electrode lay and second; The bottom of described first electrode layer is connected with the bottom of described the second electrode lay and is all connected with described contact trench structure.
Preferably, described second infrared induction structural top has the 3rd release aperture.
Preferably, described metal interconnected be that rear road is metal interconnected, the metal interconnected lower surface in described rear road is connected with front road device.
To achieve these goals, the double-deck visible red that present invention also offers the enhancing of a kind of above-mentioned transmission performance mixes the preparation method of imaging detector pixel structure outward, and it comprises:
Step 01: semi-conductive substrate is provided; And prepare the described visible ray inductive means of described visible ray induction region and described extraction pole at described Semiconductor substrate lower surface;
Step 02: form separator at the upper surface of described Semiconductor substrate, and the both sides, region of described first cavity to be formed form in described separator described metal interconnected;
Step 03: do not formed described dielectric layer by the upper surface of the described separator of described metal interconnected filling and described metal interconnected upper surface;
Step 04: remove the described dielectric layer of described first cavity area and described separator, to form void region; Then, in described void region, the first sacrifice layer is filled;
Step 05: form described contact trench structure in the described dielectric layer of described first cavity both sides;
Step 06: form described first infrared induction structure on described first sacrifice layer and described contact trench structure; Further, in described first infrared induction structure, described first release aperture is formed;
Step 07: form the second sacrifice layer at described first infrared induction superstructure; And etch described second sacrifice layer, make the sidewall of described second sacrifice layer be no more than the edge of described first infrared induction structure;
Step 08: form described second infrared induction structure in described second sacrificial layer surface; The edge of described second infrared induction structure is connected with described contact trench structure;
Step 09: form the 3rd sacrifice layer on described dielectric layer and described second infrared induction structure; And the 3rd sacrifice layer described in patterning, forms groove in described 3rd sacrifice layer; The bottom-exposed of described groove goes out the part surface of the described dielectric layer outside described contact trench structure;
Step 10: deposit one deck backing material in described 3rd sacrificial layer surface and described groove, thus form described support component, and form described second release aperture at described support component top;
Step 11: the space be communicated with described between described support component by described second infrared induction structure, described first release aperture and described second release aperture carry out release process, described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer are discharged, thus forms described first cavity, described second cavity and described 3rd cavity respectively.
Preferably, in described step 04, after the described dielectric layer removing described first cavity area and described separator, and before described first sacrifice layer of filling, comprising: the sidewall surfaces in described void region forms infrared reflecting layer.
Preferably, described first infrared induction structure comprises release guard layer on first time release guard layer, the first infrared induction parts, the first electrode layer and first; Described second infrared induction structure comprises release guard layer on second time release guard layer, the second infrared induction parts, the second electrode lay and second; In described step 07, the sidewall of described first sacrifice layer is no more than the edge of described first electrode layer; In described step 08, the bottom of described first electrode layer is connected with the bottom of described the second electrode lay and is all connected with described contact trench structure.
Preferably, when the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is amorphous silicon, adopt XeF
2as release gas, described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer are removed, now, the material of described upper release guard layer and described lower release guard layer is the composite material of titanium dioxide Silicified breccias; Or when the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is silica, gaseous hydrogen fluoride can be adopted as release gas, the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is removed, now, the material of described upper release guard layer and described lower release guard layer is silicon nitride or silicon; Or when the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is organic substance, can O be adopted
2as release gas, removed by the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer entirely, now, the material of described upper release guard layer and described lower release guard layer is inorganic material.
Preferably, in described step 08, also comprise: form the 3rd release aperture in described second infrared induction structural top; In described step 11, the carrying out of described release aperture technique also comprises by described 3rd release aperture.
Preferably, described step 05 comprises: adopt photoetching and etching technics to form the pattern of described contact trench structure, then, and filled conductive metal in the pattern of described contact trench structure.
The double-deck visible red that transmission performance of the present invention strengthens mixes imaging detector pixel structure and preparation method thereof outward, by visible ray induction region and infrared induction regional ensemble in the chips, utilize wafer as light filter course cleverly, without the need to arranging light filter course in addition, and, in the two infrared induction structures adopted, cavity is provided with below first infrared induction structure, above-mentioned two kinds of structures make the device height reduction in vertical direction formed, thus reduce the volume of device, decrease processing step and saved cost, make outside visible red, to be mixed into picture microminiaturized, chip becomes possibility, in addition, in wafer, form cavity, the loss of light in longer propagated process can be reduced, improve transmissivity, thus improve the mixing image quality of device, and, form two infrared induction structure on a semiconductor substrate, the absorptivity to infrared light can be increased, improve mixing image quality further.
Accompanying drawing explanation
Fig. 1 is the cross-sectional structure schematic diagram that the double-deck visible red of a preferred embodiment of the present invention mixes imaging detector pixel structure outward
Fig. 2 is the cross-sectional structure schematic diagram that the double-deck visible red of another preferred embodiment of the present invention mixes imaging detector pixel structure outward
Fig. 3 is the schematic flow sheet that the double-deck visible red of a preferred embodiment of the present invention mixes the manufacture method of imaging detector pixel structure outward
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
The double-deck visible red that transmission performance of the present invention strengthens mixes imaging detector pixel structure outward, comprising: as the Semiconductor substrate of visible ray filter course; Be positioned at the visible ray induction region of Semiconductor substrate lower surface, described visible ray induction region comprises visible ray inductive means and extraction pole; Metal interconnected and be positioned at the infrared induction region of Semiconductor substrate upper surface; Infrared induction region comprises two infrared induction structure; Infrared induction region specifically comprises: the first infrared induction structure, the second infrared induction structure, contact trench structure, support component, dielectric layer; First infrared induction structure is positioned on the first cavity; First infrared induction structure is all connected with contact trench structure with the second infrared induction structure, contact trench structure is connected with metal interconnected, and the electric signal transmission the first infrared induction structure and the second infrared induction structure formed by contact trench structure is to metal interconnected; In Semiconductor substrate below first infrared induction structure, there is the first cavity, between the second infrared induction structure and the first infrared induction structure, there is the second cavity; There is between support component and the second infrared induction structure the 3rd cavity; In first infrared induction structure, there is the first release aperture; Or in the dielectric layer below the first infrared induction structure and the first infrared induction structure, there is the first release aperture; Support component top has the second release aperture.The material that support component inner surface has infrared reflective material or support component is infrared reflective material.
In the present invention, can also infrared reflecting layer being had in the sidewall surfaces of the first cavity, for strengthening the absorption to infrared light, in the sidewall preventing infrared light from inciding the first cavity, causing the loss of side-wall material.
During detection, visible ray and infrared light are injected from Semiconductor substrate lower surface, and by described visible ray induction region, some visible light is absorbed by visible ray inductive means; Filter out after visible ray through Semiconductor substrate, after infrared light Semiconductor substrate, enter described first cavity, then enter the first infrared induction structure and part infrared light is absorbed by the first infrared induction structure; Do not continued across the second cavity by the infrared light that the first infrared induction structure absorbs and enter the second infrared induction structure and part infrared light is absorbed by the second infrared induction structure; Do not entered the 3rd cavity by the infrared light that the second infrared induction structure absorbs, then reflected back into the second infrared induction structure by infrared reflective material, and then absorbed by infrared induction structure.
It should be noted that, Semiconductor substrate can for having front road device, the interconnection of front road and the Semiconductor substrate of post-channel interconnection, the material of Semiconductor substrate can be silicon or germanium silicon, as long as the material that can absorb visible ray all can be applicable to, in the Semiconductor substrate in the present invention, can improve detection accuracy and image quality like this.
First cavity can avoid the loss of infrared light in communication process, and the first infrared induction structure and Semiconductor substrate is kept apart, and reduces the thermal loss of the first infrared induction structure and plays hot buffer action; Second cavity can avoid the loss of infrared light in communication process, and the second infrared induction structure and the first infrared induction structure and Semiconductor substrate is kept apart, and reduces the thermal loss of the second infrared induction structure further and plays hot buffer action; 3rd cavity is used as resonant cavity.
Mix imaging detector pixel structure and preparation method thereof below in conjunction with accompanying drawing 1-2 and specific embodiment outward to the double-deck visible red that transmission performance of the present invention strengthens to be described in further detail.It should be noted that, accompanying drawing all adopt simplify very much form, use non-ratio accurately, and only in order to object that is convenient, that clearly reach aid illustration the present embodiment.
Refer to Fig. 1, in one embodiment of the invention, the direction of arrow represents that light injects direction, and double-deck visible red mixes imaging detector pixel structure outward, comprising:
One silicon substrate 100, as visible ray filter course; There is in silicon substrate 100 front road device 102;
Visible ray induction region, is positioned at silicon substrate 100 lower surface, the contact hole 109 that visible ray induction region comprises visible ray inductive means 101 and the signal of telecommunication that formed by visible ray inductive means 101 exports; Contact hole 109 is as extraction pole; Visible ray inductive means can be PN junction, utilizes photoelectricity transformation principle, forms the induction to visible ray;
Rear road metal interconnected 103, rear road metal interconnected 103 is positioned at silicon substrate 100 upper surface of the first cavity 111 both sides; Road device 102 before being connected with below rear road metal interconnected 103; Here, outside rear road metal interconnected 103, also there is separator 114, for adjacent metal interconnected between isolation.
Infrared induction region, is positioned at silicon substrate 100 upper surface, comprises:
First cavity 111, is positioned at partial silicon substrate 100 upper surface bottom it, that is to say that the bottom of the first cavity 111 flushes with the bottom in rear road metal interconnected 103;
Dielectric layer 104, to be positioned at after the part of the first cavity 111 both sides on road metal interconnected 103 and separator 114;
Contact trench structure 110, is positioned at metal interconnected 103 upper surfaces in road after the part of cavity 111 both sides;
First infrared induction structure, be covered on the first cavity 111, the first infrared induction structural edge is connected with contact trench structure 110; First infrared induction structure has the first release aperture K1;
Second infrared induction structure, is positioned on the first infrared induction structure, and the second infrared induction structural edge is connected with contact trench structure 110; The second cavity 112 is formed between second infrared induction structure and the first infrared induction structure;
Wherein, the bottom of the first infrared induction structure and the top of contact trench structure 110 flush; Be connected with contact trench structure 110 top bottom second infrared induction structural edge, the lower surface of the second infrared induction structural top is higher than the first infrared induction structure upper surface; The second cavity 112 is formed between the upper surface of the first infrared induction structure and the side wall inner surfaces of the second infrared induction structure and top thereof.First infrared induction structure comprises release guard layer 108 on first time release guard layer 105, first infrared induction parts 106, first electrode layer 107 and first; Second infrared induction structure comprises release guard layer 108 ' on second time release guard layer 105 ', second infrared induction parts 106 ', the second electrode lay 107 ' and second; The bottom of the first electrode layer 107 is connected with the bottom of the second electrode lay 107 ' and is all connected with contact trench structure 110.
Concrete, on first time release guard layer 105, first infrared induction parts 106, first electrode layer 107 of the first infrared induction structure and first, release guard layer 108 forms first micro-bridge structure with concavo-convex contoured surface, and on first, the first infrared induction parts 106 and the first electrode layer 107 are coated on wherein by release guard layer 108 and first time release guard layer 105; In the present embodiment, the whole bottom of first time release guard layer 105 flushes with the top of contact trench structure 110; First micro-bridge structure is directly overlapped on Silicon Wafer 100 upper surface, and without the need to arranging supported hole at the first micro-bridge structure edge for supporting the first micro-bridge structure; Concrete, the whole bottom of the first infrared induction parts 106 has first time release guard layer 105; First release aperture K1 penetrates release guard layer 108, first electrode layer 107, first infrared induction parts 106 and first time release guard layer 105 on first; First infrared induction parts 106, are positioned at the top of visible ray induction region; First electrode layer 107, is positioned on the first infrared induction parts 106, for exporting the signal of telecommunication that the first infrared induction parts 106 produce; The edge of the first electrode layer 107 exceeds the edge of the first infrared induction parts 106; Release guard layer 108 on first, cover the first electrode layer 107 surface and be filled in the pattern-pitch of the first electrode layer 107, the bottom of release guard layer 108 and the top contact of the first infrared induction parts 106 in the pattern-pitch of the first electrode layer 107 first; Wherein, in first time release guard layer 105 below the part that release guard layer 108 contacts with both the first infrared induction parts 106 on first and this contact portion, there is the first release aperture K1; Further, there is in the silicon substrate 100 below the first release aperture K1 the first cavity 111.
On second time release guard layer 106 ', second infrared induction parts 107 ' of the second infrared induction structure, the second electrode lay 108 ' and second, release guard layer 109 ' forms second micro-bridge structure with concavo-convex contoured surface, and on second, the second infrared induction parts 107 ' are coated on wherein with the second electrode lay 108 ' by release guard layer 109 ' and second time release guard layer 106 '; Concrete, the whole bottom of the second infrared induction parts 107 ' has second time release guard layer 106 '; Second infrared induction parts 107 ', are positioned at the top of visible ray induction region; The second electrode lay 108 ', is positioned on the second infrared induction parts 107 ', for exporting the signal of telecommunication that the second infrared induction parts 107 ' produce; The edge of the second electrode lay 108 ' exceeds the edge of the second infrared induction parts 107 '; Release guard layer 109 ' on second; cover the second electrode lay 108 ' surface and be filled in the pattern-pitch of the second electrode lay 108 ', the bottom of release guard layer 109 ' and the top contact of the second infrared induction parts 107 ' in the pattern-pitch of the second electrode lay 108 ' second.Second infrared induction structure two ends also can have supported hole.In the present embodiment, the second infrared induction structural top has the 3rd release aperture K3.
Wherein, the material of contact trench structure is Al or Pt; On first, second, the material of release guard layer 108,108 ' and first, second lower release guard layer 105,105 ' can be silicon dioxide (SiO
2), silicon oxynitride (SiON), silicon nitride (SiN), carborundum (SiC) etc. based on Si, 0, the film of the composition such as C, N, also can be the above-mentioned film of non-stoichiometric, the silicon dioxide of such as oxygen enrichment or Silicon-rich, also can be the above-mentioned film being mixed with the elements such as B, P, C or F, such as fluorine silex glass (FSG), Pyrex (BPSG) or phosphorosilicate glass (PSG) etc.On first, the part that the first infrared induction parts 106 and the first electrode layer 107 expose encases by release guard layer 108 and first time release guard layer 105, on second, the part that the second infrared induction parts 106 ' and the second electrode lay 107 ' expose encases by release guard layer 108 ' and second time release guard layer 105 ', in order to when carrying out release process, play the effect of available protecting infrared induction parts and electrode layer, in manufacture process and use procedure, isolate extraneous pollution and damage simultaneously, improve the reliability of sensitive material detecting layer, also electrode layer can be avoided to be short-circuited as electrode.The material of first, second infrared induction parts 106,106 ' can be amorphous silicon or vanadium oxide etc.The material of first, second electrode layer 107,107 ' can be titanium, tantalum, the titanium nitride of stacked on top of one another and the tantalum of titanium or stacked on top of one another and tantalum nitride.The material of dielectric layer 104 is the silicon dioxide of silicon dioxide, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, silicon oxynitride, silicon nitride and carborundum, or is mixed with the above-mentioned material of the impurity elements such as boron, phosphorus, carbon or fluorine.The material of separator 114 can be identical with the material of dielectric layer 104.
Support component 115, is positioned at the periphery of the second infrared induction structure and does not contact with the second infrared induction structure; Support component 115 edge has supported hole; Be positioned at dielectric layer 104 surface outside contact trench structure 110 bottom supported hole, between support component and the second infrared induction structure, form the 3rd cavity 113; At support component top, there is the second release aperture K2; The inner surface of support component 115 has infrared reflective material or whole support component 115 is infrared reflective material.It should be noted that, the cross-sectional structure schematic diagram for device shown in Fig. 1, in whole device, second infrared induction structure with there is between support component the space be communicated with, such as, on vertical section structure, the edge of the second infrared induction structure does not have sidewall, therefore, infrared induction structure has the space be communicated with between this edge with support component.
Refer to Fig. 2, in another embodiment of the present invention, the direction of arrow represents that light injects direction, and double-deck visible red mixes imaging detector pixel structure outward, comprising:
One silicon substrate 200, as visible ray filter course; There is in silicon substrate 200 front road device 202;
Visible ray induction region, is positioned at silicon substrate 200 lower surface, the contact hole 209 that visible ray induction region comprises visible ray inductive means 201 and the signal of telecommunication that formed by visible ray inductive means 201 exports; Contact hole 209 is as extraction pole; Visible ray inductive means can be PN junction, utilizes photoelectricity transformation principle, forms the induction to visible ray;
Rear road metal interconnected 203, rear road metal interconnected 203 is positioned at silicon substrate 200 upper surface of the first cavity 211 both sides; Road device 202 before being connected with below rear road metal interconnected 203; Here, outside rear road metal interconnected 203, also there is separator 214, for adjacent metal interconnected between isolation.
Infrared induction region, is positioned at silicon substrate 200 upper surface, comprises:
First cavity 211, is positioned at partial silicon substrate 200 upper surface bottom it, that is to say that the bottom of the first cavity 111 flushes with the bottom in rear road metal interconnected 203; In the sidewall surfaces of the first cavity 211, there is infrared reflecting layer 220, for strengthening the absorption to infrared light, in the sidewall preventing infrared light from inciding the first cavity, causing the loss of side-wall material.
Dielectric layer 204, to be positioned at after the part of the first cavity 211 both sides on road metal interconnected 203 and separator 214;
Contact trench structure 210, is positioned at metal interconnected 203 upper surfaces in road after the part of cavity 211 both sides;
First infrared induction structure, be covered on the first cavity 211, the first infrared induction structural edge is connected with contact trench structure 210; First infrared induction structure has the first release aperture K21;
Second infrared induction structure, is positioned on the first infrared induction structure, and the second infrared induction structural edge is connected with contact trench structure 210; The second cavity 212 is formed between second infrared induction structure and the first infrared induction structure;
Wherein, the bottom of the first infrared induction structure and the top of contact trench structure 210 flush; Be connected with contact trench structure 210 top bottom second infrared induction structural edge, the lower surface of the second infrared induction structural top is higher than the first infrared induction structure upper surface; The second cavity 212 is formed between the upper surface of the first infrared induction structure and the side wall inner surfaces of the second infrared induction structure and top thereof.First infrared induction structure comprises release guard layer 208 on first time release guard layer 205, first infrared induction parts 206, first electrode layer 207 and first; Second infrared induction structure comprises release guard layer 208 ' on second time release guard layer 205 ', second infrared induction parts 206 ', the second electrode lay 207 ' and second; The bottom of the first electrode layer 207 is connected with the bottom of the second electrode lay 207 ' and is all connected with contact trench structure 210.
Concrete, on first time release guard layer 205, first infrared induction parts 206, first electrode layer 207 of the first infrared induction structure and first, release guard layer 208 forms first micro-bridge structure with concavo-convex contoured surface, and on first, the first infrared induction parts 206 and the first electrode layer 207 are coated on wherein by release guard layer 208 and first time release guard layer 205; In the present embodiment, the whole bottom of first time release guard layer 205 flushes with the top of contact trench structure 210; First micro-bridge structure is directly overlapped on Silicon Wafer 200 upper surface, and without the need to arranging supported hole at the first micro-bridge structure edge for supporting the first micro-bridge structure; Concrete, the whole bottom of the first infrared induction parts 206 has first time release guard layer 205; First release aperture K21 penetrates release guard layer 208, first electrode layer 207, first infrared induction parts 206 and first time release guard layer 205 on first; First infrared induction parts 206, are positioned at the top of visible ray induction region; First electrode layer 207, is positioned on the first infrared induction parts 206, for exporting the signal of telecommunication that the first infrared induction parts 206 produce; The edge of the first electrode layer 207 exceeds the edge of the first infrared induction parts 206; Release guard layer 208 on first, cover the first electrode layer 207 surface and be filled in the pattern-pitch of the first electrode layer 207, the bottom of release guard layer 208 and the top contact of the first infrared induction parts 206 in the pattern-pitch of the first electrode layer 207 first; Wherein, in first time release guard layer 205 below the part that release guard layer 208 contacts with both the first infrared induction parts 106 on first and this contact portion, there is the first release aperture K21; Further, there is in the silicon substrate 200 below the first release aperture K21 the first cavity 211.
On second time release guard layer 206 ', second infrared induction parts 207 ' of the second infrared induction structure, the second electrode lay 208 ' and second, release guard layer 209 ' forms second micro-bridge structure with concavo-convex contoured surface, and on second, the second infrared induction parts 207 ' are coated on wherein with the second electrode lay 208 ' by release guard layer 209 ' and second time release guard layer 206 '; Concrete, the whole bottom of the second infrared induction parts 207 ' has second time release guard layer 206 '; Second infrared induction parts 207 ', are positioned at the top of visible ray induction region; The second electrode lay 208 ', is positioned on the second infrared induction parts 207 ', for exporting the signal of telecommunication that the second infrared induction parts 207 ' produce; The edge of the second electrode lay 208 ' exceeds the edge of the second infrared induction parts 207 '; Release guard layer 209 ' on second; cover the second electrode lay 208 ' surface and be filled in the pattern-pitch of the second electrode lay 208 ', the bottom of release guard layer 209 ' and the top contact of the second infrared induction parts 207 ' in the pattern-pitch of the second electrode lay 208 ' second.Second infrared induction structure two ends also can have supported hole.In the present embodiment, the second infrared induction structural top has the 3rd release aperture K23.
Support component 215, is positioned at the periphery of the second infrared induction structure and does not contact with the second infrared induction structure; Support component 215 edge has supported hole; Be positioned at dielectric layer 204 surface outside contact trench structure 210 bottom supported hole, between support component and the second infrared induction structure, form the 3rd cavity 213; At support component top, there is the second release aperture K22; The inner surface of support component 215 has infrared reflective material or whole support component 215 is infrared reflective material.It should be noted that, the cross-sectional structure schematic diagram for device shown in Fig. 2, in whole device, second infrared induction structure with there is between support component the space be communicated with, such as, on vertical section structure, the edge of the second infrared induction structure does not have sidewall, therefore, infrared induction structure has the space be communicated with between this edge with support component.
About contact trench structure, on first, second, the material of the material of the material of the material of the material of release guard layer 208,208 ' and first, second lower release guard layer 205,205 ', first, second infrared induction parts 206,206 ', first, second electrode layer 207,207 ', dielectric layer 204, separator 214, as seen see the associated description of structure shown in Fig. 1, repeats no more here.
In a preferred embodiment of the present invention, refer to Fig. 3, mix imaging detector pixel structure outward to describe the preparation method that double-deck visible red mixes imaging detector pixel structure outward to prepare above-mentioned double-deck visible red, it comprises the following steps:
Step 01: semi-conductive substrate is provided; And visible ray inductive means and the contact component of visible ray induction region is prepared at Semiconductor substrate lower surface;
Concrete, can be silicon substrate here; The material of silicon substrate can be amorphous silicon; Visible ray inductive means is photodiode, and the preparation of photodiode and contact component thereof can adopt existing method; In silicon substrate lower surface, form visible ray inductive means, visible region is positioned at immediately below infrared induction region, and visible ray inductive means can be positioned at below infrared induction parts.
Step 02: form separator at the upper surface of Semiconductor substrate, and the both sides, region of the first cavity to be formed form in the isolation layer metal interconnected;
Concrete, first, road device before the region of metal interconnected below, rear road to be formed is formed, then, can be, but not limited to adopt chemical vapour deposition technique to form separator on a silicon substrate, then, after being formed in the separator above front road device, road is metal interconnected, the metal interconnected preparation in rear road can adopt common process, repeats no more here.
Step 03: do not formed dielectric layer by the upper surface of the separator of metal interconnected filling and metal interconnected upper surface;
Concrete, can adopt but be not limited to chemical vapour deposition technique and carry out metallization medium layer.Chemical mechanical milling tech can be adopted after dielectric layer is formed to dielectric layer top surface planarization.
Step 04: dielectric layer and the separator of removing the first cavity area, to form void region; Then, in void region, the first sacrifice layer is filled;
Concrete, can be, but not limited to adopt photoetching and etching technics to form void region.Can be, but not limited to adopt chemical vapour deposition technique or cladding process to form the first sacrifice layer in void region, make the lateral wall of the sidewall of the first sacrificial layer material and contact trench structure have certain spacing in the horizontal direction, can guarantee that the first electrode layer of follow-up formation is all connected with contact trench structure with the second electrode lay.Chemical mechanical milling tech can also be adopted after filling the first sacrifice layer to dielectric layer top surface planarization, the first sacrifice layer top surface is flushed with dielectric layer top surface.
Step 05: form described contact trench structure in the dielectric layer of the first cavity both sides;
Concrete, can be, but not limited to adopt Damascus technics to form contact trench structure, contact trench structure be used for the signal of telecommunication that first, second infrared induction structure produces to output to rear road metal interconnected in.
Step 06: form the first infrared induction structure on the first sacrifice layer and contact trench structure; Further, in the first infrared induction structure, the first release aperture is formed;
Concrete, comprising:
First, first time release guard layer material and the first infrared induction material is formed successively at the first sacrifice layer and contact trench structure upper surface, and patterning infrared induction material and lower release guard layer material, to form first time release guard layer and the first infrared induction parts, such as, adopt photoetching and etching technics, etch the edge of infrared induction material and the edge of lower release guard layer material, thus the edge of lower release guard layer of formation and the edge of the infrared induction parts of formation are flushed, and be no more than via top inwall position, like this, the infrared induction parts formed and lower release guard layer would not block via top,
Then, form metal material at infrared induction material surface and through-hole surfaces, and pattern metal material, to form the first electrode layer; The edge of electrode layer exceedes the edge of infrared induction material, and contacts with via top; Such as, physical gas-phase deposition can be adopted at substrate top surface deposition layer of metal material, then through photoetching and etching technics, in metal material, etch groove, form the first electrode layer; It should be noted that, owing to being only describe from the cross section structure of device in accompanying drawing, though electrode layer position display is in the accompanying drawings the surface of being interrupted, but electrode layer can be continuous print surface in other position of device.
Then, in the first electrode layer surface and pattern-pitch thereof, form release guard layer material, then release guard layer material on patterning on first, to form release guard layer on first, on first, the first electrode layer two ends expose by release guard layer; The part that on first, release guard layer is filled in the pattern-pitch of the first electrode layer contacts with the first infrared induction parts.
Finally, the part that release guard layer contacts with the first infrared induction parts on first forms the first release aperture.
Step 07: form the second sacrifice layer at the first infrared induction superstructure; And etch the second sacrifice layer, make the sidewall of the second sacrifice layer be no more than the edge of the first infrared induction structure;
Concrete, chemical vapor deposition method or coating can be adopted to form the second sacrificial layer material.Can be, but not limited to adopt chemical mechanical milling tech to carry out planarization second sacrifice layer top surface.Here, the sidewall of the first sacrifice layer is no more than the edge of the first electrode layer.
Step 08: form the second infrared induction structure in the second sacrificial layer surface; The edge of the second infrared induction structure is connected with contact trench structure;
Concrete, can be, but not limited to be formed successively release guard layer on second time release guard layer, the second infrared induction parts, the second electrode lay and second, the process forming each layer comprises the step of deposition step and this layer of patterning; Also be included in the second infrared induction structural top and form the 3rd release aperture, the 3rd release aperture can more be conducive to dischargeing the material of required release in release process; On second, the second infrared induction parts and electrode layer envelope by release guard layer and second time release guard layer; In other embodiments of the invention, the formation order of the second electrode lay and the second infrared induction parts can be exchanged; Also release aperture can not be formed in this second infrared induction structure.Here, the bottom of the first electrode layer is connected with the bottom of the second electrode lay and is all connected with contact trench structure.
Step 09: form the 3rd sacrifice layer on dielectric layer and the second infrared induction structure; And patterning the 3rd sacrifice layer, forms groove in the 3rd sacrifice layer; The bottom-exposed of groove goes out the part surface of the dielectric layer outside contact trench structure;
Concrete, first, chemical vapor deposition method or coating can be adopted to form the 3rd sacrificial layer material, can be, but not limited to adopt chemical mechanical milling tech to carry out planarization the 3rd sacrifice layer top surface.Then, can be, but not limited to adopt photoetching and etching technics to form groove at the 3rd sacrifice layer fringe region, groove is positioned at outside the second infrared induction structure, and groove is for the formation of follow-up supported hole.
Step 10: deposit one deck backing material in the 3rd sacrificial layer surface and groove, thus form support component, and form described second release aperture at support component top;
Concrete, in this enforcement, utilize infrared reflective material to reflect the infrared light absorbed without first, second infrared induction structure, first, second infrared induction structure is absorbed infrared light again, thus thoroughly absorb incident infrared light; At the inner surface at support component top, there is infrared reflective material, such as form infrared reflective material layer at the 3rd sacrifice layer top surface, or the inner surface of whole support component has infrared reflective material, such as, form infrared reflective material on the whole surface of fluted 3rd sacrifice layer of tool; Then one deck backing material is deposited at infrared reflective material and the 3rd sacrificial layer surface that is not blocked; Or whole support component can be infrared reflective material, thus form the support component that fringe region has supported hole.
Step 11: the space be communicated with described between support component by the second infrared induction structure, the first release aperture and the second release aperture carry out release process, first sacrifice layer, the second sacrifice layer and the 3rd sacrifice layer are discharged, thus forms the first cavity, the second cavity and the 3rd cavity respectively.
Concrete, be positioned at the second infrared induction structure peripheral due to support component and do not contact with it, second infrared induction structure there is between some edge with support component the space be communicated with, therefore, the second sacrificial layer material under the second infrared induction structure can be discharged with the space be communicated with of support component by the second infrared induction structure.In the present embodiment, because the second infrared induction structural top also has the 3rd release aperture, so the second sacrificial layer material is also discharged by the 3rd release aperture of the second infrared induction structural top simultaneously.When the material of first, second, third sacrifice layer is amorphous silicon, then adopt XeF
2as release gas, whole sacrificial layer material removed, now, the material of upper release guard layer and lower release guard layer is the composite material of titanium dioxide Silicified breccias.In another embodiment of the invention; when first, second, third sacrificial layer material is silica, gaseous hydrogen fluoride can be adopted as release gas, whole sacrificial layer material is removed; now, the material of upper release guard layer and lower release guard layer is silicon nitride or silicon etc.In another embodiment of the present invention, when first, second, third sacrificial layer material is organic substance, such as photoresist, polyimides, can adopt O
2as release gas, whole sacrificial layer material removed, now, the material of upper release guard layer and lower release guard layer is inorganic material.
In sum, the double-deck visible red that transmission performance of the present invention strengthens mixes imaging detector pixel structure and preparation method thereof outward, by visible ray induction region and infrared induction regional ensemble in the chips, utilize wafer as light filter course cleverly, without the need to arranging light filter course in addition, and, in the two infrared induction structures adopted, cavity is provided with below first infrared induction structure, above-mentioned two kinds of structures make the device height reduction in vertical direction formed, thus reduce the volume of device, decrease processing step and saved cost, make outside visible red, to be mixed into picture microminiaturized, chip becomes possibility, in addition, in wafer, form cavity, the loss of light in longer propagated process can be reduced, improve transmissivity, thus improve the mixing image quality of device, and, form two infrared induction structure on a semiconductor substrate, the absorptivity to infrared light can be increased, improve mixing image quality further.
Although the present invention discloses as above with preferred embodiment; right described embodiment is citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a two-layer hybrid imaging detector pixel structure, is characterized in that, comprising:
Semi-conductive substrate, as visible ray filter course;
Visible ray induction region, is positioned at described Semiconductor substrate lower surface, and described visible ray induction region comprises visible ray inductive means and contact component;
Metal interconnected, be positioned at described Semiconductor substrate upper surface;
Infrared induction region, is positioned at Semiconductor substrate upper surface, and has double-deck infrared induction structure, and it comprises:
First cavity, is positioned in described Semiconductor substrate; The described metal interconnected described Semiconductor substrate upper surface being positioned at described first cavity both sides;
Separator, is positioned at the described semiconductor substrate surface in described metal interconnected outside;
Dielectric layer, is positioned on the described metal interconnected and described separator of part;
Contact trench structure, is positioned at the described metal interconnected upper surface of described first cavity both sides;
First infrared induction structure, is covered on described first cavity, and described first infrared induction structural edge is connected with described contact trench structure; Described first infrared induction structure has the first release aperture;
Second infrared induction structure, is positioned on described first infrared induction structure, and described second infrared induction structural edge is connected with described contact trench structure; The second cavity is formed between described second infrared induction structure and described first infrared induction structure;
Support component, is positioned at the periphery of described second infrared induction structure and does not contact with described second infrared induction structure; The edge of described support component has supported hole, and the top of described support component has the second release aperture; Be positioned on the described dielectric layer outside described contact trench structure bottom described supported hole; Between described support component and described second infrared induction structure, there is the 3rd cavity, and between described second infrared induction structure and described support component, there is the space of connection; The inner surface of described support component has infrared reflective material or whole described support component is infrared reflective material;
Wherein, visible ray and infrared light are injected from described Semiconductor substrate lower surface, and by described visible ray induction region, the described visible ray of part is absorbed by described visible ray inductive means; After described Semiconductor substrate filters out visible ray, after Semiconductor substrate described in infrared light, enter described first cavity, then enter described first infrared induction structure and the described infrared light of part is absorbed by described first infrared induction structure; Do not continued across described second cavity by the infrared light that described first infrared induction structure absorbs and enter described second infrared induction structure and the described infrared light of part is absorbed by described second infrared induction structure; Do not entered described 3rd cavity by the infrared light that described second infrared induction structure absorbs, then reflected back into described second infrared induction structure by described infrared reflective material, and then absorbed by described infrared induction structure.
2. two-layer hybrid imaging detector pixel structure according to claim 1, is characterized in that, described first cavity sidewalls surface has infrared reflecting layer, for strengthening the absorption to infrared light, prevents described infrared light from inciding in the sidewall of described first cavity.
3. two-layer hybrid imaging detector pixel structure according to claim 1, is characterized in that, the bottom of described first infrared induction structure and the top of described contact trench structure flush; Be connected with described contact trench structural top bottom described second infrared induction structural edge, the lower surface of described second infrared induction structural top is higher than described first infrared induction structure upper surface; Described second cavity is formed between the upper surface of described first infrared induction structure and the side wall inner surfaces of described second infrared induction structure and top thereof.
4. two-layer hybrid imaging detector pixel structure according to claim 3, is characterized in that, described second infrared induction structural top has the 3rd release aperture.
5. a preparation method for two-layer hybrid imaging detector pixel structure according to claim 1, is characterized in that, comprising:
Step 01: semi-conductive substrate is provided; And prepare the described visible ray inductive means of described visible ray induction region and described extraction pole at described Semiconductor substrate lower surface;
Step 02: form separator at the upper surface of described Semiconductor substrate, and the both sides, region of described first cavity to be formed form in described separator described metal interconnected;
Step 03: do not formed described dielectric layer by the upper surface of the described separator of described metal interconnected filling and described metal interconnected upper surface;
Step 04: remove the described dielectric layer of described first cavity area and described separator, to form void region; Then, in described void region, the first sacrifice layer is filled;
Step 05: form described contact trench structure in the described dielectric layer of described first cavity both sides;
Step 06: form described first infrared induction structure on described first sacrifice layer and described contact trench structure; Further, in described first infrared induction structure, described first release aperture is formed;
Step 07: form the second sacrifice layer at described first infrared induction superstructure; And etch described second sacrifice layer, make the sidewall of described second sacrifice layer be no more than the edge of described first infrared induction structure;
Step 08: form described second infrared induction structure in described second sacrificial layer surface; The edge of described second infrared induction structure is connected with described contact trench structure;
Step 09: form the 3rd sacrifice layer on described dielectric layer and described second infrared induction structure; And the 3rd sacrifice layer described in patterning, forms groove in described 3rd sacrifice layer; The bottom-exposed of described groove goes out the part surface of the described dielectric layer outside described contact trench structure;
Step 10: deposit one deck backing material in described 3rd sacrificial layer surface and described groove, thus form described support component, and form described second release aperture at described support component top;
Step 11: the space be communicated with described between described support component by described second infrared induction structure, described first release aperture and described second release aperture carry out release process, described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer are discharged, thus forms described first cavity, described second cavity and described 3rd cavity respectively.
6. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, it is characterized in that, in described step 04, after the described dielectric layer removing described first cavity area and described separator, and before described first sacrifice layer of filling, comprising: the sidewall surfaces in described void region forms infrared reflecting layer.
7. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, is characterized in that, described first infrared induction structure comprises release guard layer on first time release guard layer, the first infrared induction parts, the first electrode layer and first; Described second infrared induction structure comprises release guard layer on second time release guard layer, the second infrared induction parts, the second electrode lay and second; In described step 07, the sidewall of described first sacrifice layer is no more than the edge of described first electrode layer; In described step 08, the bottom of described first electrode layer is connected with the bottom of described the second electrode lay and is all connected with described contact trench structure.
8. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 7, is characterized in that, when the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is amorphous silicon, adopts XeF
2as release gas, described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer are removed, now, the material of described upper release guard layer and described lower release guard layer is the composite material of titanium dioxide Silicified breccias; Or when the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is silica, gaseous hydrogen fluoride can be adopted as release gas, the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is removed, now, the material of described upper release guard layer and described lower release guard layer is silicon nitride or silicon; Or when the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer is organic substance, can O be adopted
2as release gas, removed by the material of described first sacrifice layer, described second sacrifice layer and described 3rd sacrifice layer entirely, now, the material of described upper release guard layer and described lower release guard layer is inorganic material.
9. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, is characterized in that, in described step 08, also comprise: form the 3rd release aperture in described second infrared induction structural top; In described step 11, the carrying out of described release aperture technique also comprises by described 3rd release aperture.
10. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, it is characterized in that, described step 05 comprises: adopt photoetching and etching technics to form the pattern of described contact trench structure, then, and filled conductive metal in the pattern of described contact trench structure.
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