CN105206635B - Enhance radioparent two-layer hybrid imaging detector pixel structure and preparation method thereof - Google Patents
Enhance radioparent two-layer hybrid imaging detector pixel structure and preparation method thereof Download PDFInfo
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- CN105206635B CN105206635B CN201510546243.XA CN201510546243A CN105206635B CN 105206635 B CN105206635 B CN 105206635B CN 201510546243 A CN201510546243 A CN 201510546243A CN 105206635 B CN105206635 B CN 105206635B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
Abstract
The present invention provides enhancing radioparent two-layer hybrid imaging detector pixel structure and preparation method thereof, including：Substrate；Positioned at the visible light-sensitive area of substrate lower surface, metal interconnection and positioned at the infrared induction region of substrate top surface；Infrared induction region includes：First, second infrared induction structure, contact trench structure, support member, dielectric layer；First infrared induction structure is all connected with the second infrared induction structure with contact trench structure, contact trench structure is connected with metal interconnection, is interconnected the electric signal transmission that the first infrared induction structure and the second infrared induction structure are formed to metal by contact trench structure；In substrate below first infrared induction structure there is the first cavity, there is the second cavity between the second infrared induction structure and the first infrared induction structure；There is the 3rd cavity between support member and the second infrared induction structure；There is the first release aperture in first infrared induction structure；There is the second release aperture at the top of support member.
Description
Technical field
The present invention relates to microelectronics technologies, and in particular to is mixed outside a kind of double-deck visible red of transmission performance enhancing
Imaging detector pixel structure and preparation method thereof.
Background technology
With industry and the development of living standard, simple infrared imaging or simple visual light imaging have been unable to meet
There is demand more broadband imaging technique increasingly to attract attention, particularly can be simultaneously to visible ray and infrared photaesthesia
Imaging technique.
However, in existing mixing image device, using two light paths of lens forming come respectively to visible ray and infrared light
Carry out induction image forming, be finally synthesized together using computer processing system, by the separation of light path cause to be formed it is infrared
Image section and visible images part generate larger deviation of the alignment, seriously affect image quality.
Due to microelectromechanical systems (MEMS) technology have it is small, intelligent, executable, can integrate, processing compatibility is good,
Many advantages, such as at low cost, if can be combined hybrid imaging technology with microelectric technique, works out microelectronics technology
Hybrid imaging technology, will avoid the problem that the deviation of the alignment of existing infrared image and visible images is big.
The content of the invention
In order to overcome problem above, the present invention is intended to provide being mixed into outside a kind of double-deck visible red of transmission performance enhancing
As detector pixel structure and preparation method thereof, the absorptivity to light is improved using double-deck induction structure, by increasing gap
It is penetrated to enhance, light loss is reduced, so as to improve image quality.
To achieve these goals, imaging detection is mixed outside the double-deck visible red the present invention provides transmission performance enhancing
Device pixel structure, including：
Semi-conductive substrate, as visible ray filter layer；
It can be seen that light-sensitive area, positioned at the Semiconductor substrate lower surface, the visible light-sensitive area includes visible ray
Sense component and contact component；
Metal interconnects, positioned at the Semiconductor substrate upper surface；
Infrared induction region positioned at Semiconductor substrate upper surface, and has double-deck infrared induction structure, including：
First cavity, in the Semiconductor substrate；The metal interconnection is positioned at the described of the first cavity both sides
Semiconductor substrate upper surface；
Separation layer, the semiconductor substrate surface positioned at metal interconnection outside；
Dielectric layer, in the part metal interconnection and the separation layer；
Contact trench structure, the metal positioned at the first cavity both sides interconnect upper surface；
First infrared induction structure is covered on first cavity, the first infrared induction structural edge with it is described
Contact trench structure is connected；The first infrared induction structure has the first release aperture；
Second infrared induction structure, on the first infrared induction structure, and the second infrared induction structure
Edge is connected with the contact trench structure；It is formed between the second infrared induction structure and the first infrared induction structure
Second cavity；
Support member does not connect positioned at the periphery of the second infrared induction structure and with the second infrared induction structure
It touches；The edge of the support member has supported hole, and the top of the support member has the second release aperture；The supported hole bottom
Portion is located on the dielectric layer on the outside of the contact trench structure；The support member and the second infrared induction structure it
Between have the 3rd cavity, and between the second infrared induction structure and the support member have connection gap；It is described
It is infrared reflective material that the inner surface of support member, which has infrared reflective material or the entire support member,；
Wherein, it is seen that light and infrared light are injected from the Semiconductor substrate lower surface, by the visible light-sensitive area,
The part visible ray is absorbed by the visible photoinduced part part；After the Semiconductor substrate filters out visible ray, infrared light
Through first cavity is entered after the Semiconductor substrate, subsequently into described in the first infrared induction structure and part
Infrared light is absorbed by the first infrared induction structure；It is not continued across by the infrared light that the first infrared induction structure absorbs
Second cavity is inhaled into the second infrared induction structure and the part infrared light by the second infrared induction structure
It receives；Not by the infrared light that the second infrared induction structure absorbs into the 3rd cavity, then by the infrared external reflection material
Material reflects back into the second infrared induction structure, and then is absorbed by the infrared induction structure.
Preferably, the first cavity sidewalls surface has infrared reflecting layer, for enhancing the absorption to infrared light, prevents
The infrared light is incided into the side wall of first cavity.
Preferably, the bottom of the first infrared induction structure at the top of the contact trench structure with being flush；It is described
Second infrared induction structural edge bottom is connected with the contact trench structural top, the second infrared induction structural top
Lower surface is higher than the first infrared induction structure upper surface；The upper surface of the first infrared induction structure and described second red
Second cavity is formed between the side wall inner surfaces of outer induction structure and its top.
Preferably, the first infrared induction structure includes first time release guard layer, the first infrared induction component, first
Release guard layer on electrode layer and first；The second infrared induction structure includes second time release guard layer, the second infrared sense
Answer component, release guard layer on the second electrode lay and second；The bottom of the first electrode layer and the bottom of the second electrode lay
Portion is connected and is connected with the contact trench structure.
Preferably, the second infrared induction structural top has the 3rd release aperture.
Preferably, the metal is mutually linked as rear road metal interconnection, and the rear road metal interconnection lower surface is connected with preceding logos and utensils
Part.
To achieve these goals, outside the present invention also provides a kind of double-deck visible red of above-mentioned transmission performance enhancing
The preparation method of imaging detector pixel structure is mixed, including：
Step 01：Semi-conductive substrate is provided；And prepare the visible light-sensing region in the Semiconductor substrate lower surface
The visible photoinduced part part in domain and the contact component；
Step 02：Separation layer is formed in the upper surface of the Semiconductor substrate, and it is to be formed described in the separation layer
The region both sides of first cavity form the metal interconnection；
Step 03：Not by the upper surface of the separation layer of metal interconnection filling and the upper table of metal interconnection
Face forms the dielectric layer；
Step 04：The dielectric layer of first cavity area and the separation layer are removed, to form void region；So
Afterwards, the first sacrificial layer is filled in the void region；
Step 05：The contact trench structure is formed in the dielectric layer of the first cavity both sides；
Step 06：The first infrared induction structure is formed on first sacrificial layer and the contact trench structure；
Also, first release aperture is formed in the first infrared induction structure；
Step 07：The second sacrificial layer is formed in the first infrared induction superstructure；And it etches described second to sacrifice
Layer makes the side wall of second sacrificial layer be no more than the edge of the first infrared induction structure；
Step 08：The second infrared induction structure is formed in second sacrificial layer surface；Second infrared induction
The edge of structure is connected with the contact trench structure；
Step 09：3rd sacrifice layer is formed on the dielectric layer and the second infrared induction structure；And it patterns
The 3rd sacrifice layer forms groove in the 3rd sacrifice layer；The bottom-exposed of the groove goes out the contact trench knot
The part surface of the dielectric layer on the outside of structure；
Step 10：One layer of backing material is deposited in the 3rd sacrifice layer surface and the groove, it is described so as to be formed
Support member, and second release aperture is formed at the top of the support member；
Step 11：Pass through the gap connected between the second infrared induction structure and the support member, institute
State the first release aperture and second release aperture and carry out release process, by first sacrificial layer, second sacrificial layer and
The 3rd sacrifice layer discharges, so as to be respectively formed first cavity, second cavity and the 3rd cavity.
Preferably, in the step 04, after the dielectric layer and the separation layer that remove first cavity area,
And before first sacrificial layer is filled, including：Sidewall surfaces in the void region form infrared reflecting layer.
Preferably, the first infrared induction structure includes first time release guard layer, the first infrared induction component, first
Release guard layer on electrode layer and first；The second infrared induction structure includes second time release guard layer, the second infrared sense
Answer component, release guard layer on the second electrode lay and second；In the step 07, the side wall of second sacrificial layer is no more than institute
State the edge of first electrode layer；In the step 08, the bottom of the first electrode layer and the bottom phase of the second electrode lay
It is connected even and with the contact trench structure.
Preferably, when the material of first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer is non-
During crystal silicon, using XeF2As release gas, by first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer
Removal, at this point, the material of the upper release guard layer and the lower release guard layer is silica and the composite material of aluminium；Or
Person can adopt when the material of first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer is silica
By the use of gaseous hydrogen fluoride as release gas, by first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer
Material removes, at this point, the material of the upper release guard layer and the lower release guard layer is silicon nitride or silicon；Or work as institute
When the material for stating the first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer is organic matter, O may be employed2As
Gas is discharged, the material of complete first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer is removed, at this point,
The material of the upper release guard layer and the lower release guard layer is inorganic material.
Preferably, in the step 08, further include：The 3rd release aperture is formed in the second infrared induction structural top；
In the step 11, the release process further include through the 3rd release aperture.
Preferably, the step 05 includes：The pattern of the contact trench structure is formed using photoetching and etching technics,
Then, conducting metal is filled in the pattern of the contact trench structure.
Imaging detector pixel structure and its preparation side are mixed outside the double-deck visible red of the transmission performance enhancing of the present invention
Method, it will be seen that light-sensitive area and infrared induction regional ensemble in the chips, cleverly by the use of wafer as light filter layer, without
In addition light filter layer is set, also, in used double infrared induction structures, sky is provided with below the first infrared induction structure
Chamber, above two structure cause the height of the device to be formed in vertical direction to reduce, so as to reduce the volume of device, reduce
Processing step and cost is saved, made it possible to be mixed into as micromation, chip outside visible red；In addition, in wafer
Middle formation cavity, it is possible to reduce loss of the light in longer path communication process improves transmissivity, so as to improve device
Mix image quality；Moreover, forming double infrared induction structures on a semiconductor substrate, the absorptivity to infrared light can be increased,
Further improve mixing image quality.
Description of the drawings
Fig. 1 is the horizontal stroke that imaging detector pixel structure is mixed outside the double-deck visible red of the preferred embodiment of the present invention
Cross section structure schematic diagram
Fig. 2 is that imaging detector pixel structure is mixed outside the double-deck visible red of another preferred embodiment of the present invention
Cross-sectional structure schematic diagram
Fig. 3 is the system that imaging detector pixel structure is mixed outside the double-deck visible red of the preferred embodiment of the present invention
Make the flow diagram of method
Specific embodiment
To make present disclosure more clear and easy to understand, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Imaging detector pixel structure is mixed outside the double-deck visible red of the transmission performance enhancing of the present invention, including：As
The Semiconductor substrate of visible ray filter layer；Positioned at the visible light-sensitive area of Semiconductor substrate lower surface, the visible photoinduction
Region includes visible photoinduced part part and extraction pole；Metal interconnects and positioned at the infrared induction area of Semiconductor substrate upper surface
Domain；Infrared induction region includes double infrared induction structures；Infrared induction region specifically includes：First infrared induction structure, second
Infrared induction structure, contact trench structure, support member, dielectric layer；First infrared induction structure is located on the first cavity；First
Infrared induction structure is all connected with the second infrared induction structure with contact trench structure, and contact trench structure interconnects phase with metal
Even, by contact trench structure by the electric signal transmission that the first infrared induction structure and the second infrared induction structure are formed to golden
Belong to interconnection；There is the first cavity, the second infrared induction structure and first in Semiconductor substrate below first infrared induction structure
There is the second cavity between infrared induction structure；There is the 3rd cavity between support member and the second infrared induction structure；First
There is the first release aperture in infrared induction structure；Or the first medium below infrared induction structure and the first infrared induction structure
There is the first release aperture in layer；There is the second release aperture at the top of support member.Support member inner surface has infrared reflective material
Or the material of support member is infrared reflective material.
In the present invention, there can also be infrared reflecting layer in the sidewall surfaces of the first cavity, for enhancing to infrared light
It absorbs, prevents infrared light from inciding into the loss for causing side-wall material in the side wall of the first cavity.
During detection, it is seen that light and infrared light are injected from Semiconductor substrate lower surface, pass through the visible light-sensitive area, portion
Visible ray is divided to be absorbed by visible photoinduced part part；After Semiconductor substrate filters out visible ray, infrared light Semiconductor substrate
Afterwards into first cavity, inhaled subsequently into the first infrared induction structure and part infrared light by the first infrared induction structure
It receives；The second cavity is not continued across into the second infrared induction structure and part by the infrared light that the first infrared induction structure absorbs
Infrared light is absorbed by the second infrared induction structure；The infrared light not absorbed by the second infrared induction structure enters the 3rd cavity, so
The second infrared induction structure is reflected back by infrared reflective material afterwards, and then is absorbed by infrared induction structure.
It should be noted that Semiconductor substrate can be the semiconductor with preceding road device, the interconnection of preceding road and post-channel interconnection
Substrate, the material of Semiconductor substrate can be silicon or germanium silicon, as long as the material that can absorb visible ray can be applied to this
In Semiconductor substrate in invention, detection accuracy and image quality can be so improved.
First cavity can be to avoid loss of the infrared light in communication process, and leads the first infrared induction structure and partly
Body substrate is kept apart, and is reduced the heat loss of the first infrared induction structure and is played the role of being thermally isolated；Second cavity can be to avoid
Loss of the infrared light in communication process, and the second infrared induction structure and the first infrared induction structure and semiconductor are served as a contrast
Bottom keeps apart, and is further reduced the heat loss of the second infrared induction structure and plays the role of being thermally isolated；3rd cavity is used as humorous
Shake chamber.
It is mixed outside the double-deck visible red enhanced below in conjunction with attached drawing 1-2 and specific embodiment the transmission performance of the present invention
Imaging detector pixel structure and preparation method thereof is described in further detail.It should be noted that attached drawing use simplifies very much
Form, using non-accurate ratio, and only to it is convenient, clearly achieve the purpose that aid in illustrating the present embodiment.
Referring to Fig. 1, in one embodiment of the invention, imaging detector pixel knot is mixed outside double-deck visible red
Structure, including：
One silicon substrate 100, as visible ray filter layer；There is preceding road device 102 in silicon substrate 100；
It can be seen that light-sensitive area, positioned at 100 lower surface of silicon substrate, it is seen that light-sensitive area includes visible photoinduced part part
101 and it will be seen that the contact hole 109 of electric signal output that photoinduction component 101 is formed；Contact hole 109 is used as extraction pole；It can
It can be PN junction to see photoinduction component, using photoelectricity transformation principle, to form the sensing to visible ray；
Road metal interconnection 103 afterwards, rear road metal interconnection 103 are located at 100 upper surface of silicon substrate of 111 both sides of the first cavity；
Road device 102 before being connected with below rear road metal interconnection 103；Here, also there is separation layer in 103 outside of rear road metal interconnection
114, for the isolation between adjacent metal interconnection.
Infrared induction region, positioned at 100 upper surface of silicon substrate, including：
First cavity 111, bottom are located at 100 upper surface of partial silicon substrate, that is to say the bottom of the first cavity 111 with after
The bottom of road metal interconnection 103 flushes；
Dielectric layer 104 is interconnected positioned at road metal behind the part of 111 both sides of the first cavity on 103 and separation layer 114；
Contact trench structure 110, road metal interconnects 103 upper surfaces behind the part of 111 both sides of a cavity；
First infrared induction structure is covered on the first cavity 111, the first infrared induction structural edge and contact trench knot
Structure 110 is connected；First infrared induction structure has the first release aperture K1；
Second infrared induction structure, on the first infrared induction structure, and the second infrared induction structural edge is with connecing
Groove structure 110 is touched to be connected；The second cavity 112 is formed between second infrared induction structure and the first infrared induction structure；
Wherein, the bottom of the first infrared induction structure and the top of contact trench structure 110 are flush；Second infrared induction
Structural edge bottom is connected with 110 top of contact trench structure, and the lower surface of the second infrared induction structural top is red higher than first
Outer induction structure upper surface；Side wall inner surfaces and its top of the upper surface of first infrared induction structure with the second infrared induction structure
The second cavity 112 is formed between portion.First infrared induction structure includes first time release guard layer 105, the first infrared induction portion
Release guard layer 108 on part 106, first electrode layer 107 and first；Second infrared induction structure includes second time release guard layer
Release guard layer 108 ' on 105 ', second infrared induction component 106 ', the second electrode lay 107 ' and second；First electrode layer 107
Bottom be connected with the bottom of the second electrode lay 107 ' and be connected with contact trench structure 110.
Specifically, first time release guard layer 105 of the first infrared induction structure, the first infrared induction component 106, first
Release guard layer 108 forms the first micro-bridge structure with concave-convex contoured surface on electrode layer 107 and first, discharges and protects on first
Sheath 108 and first time release guard layer 105 coat the first infrared induction component 106 and first electrode layer 107 wherein；This
In embodiment, the entire bottom of first time release guard layer 105 is flushed with the top of contact trench structure 110；First microbridge knot
Structure is directly overlapped on 100 upper surface of Silicon Wafer, micro- without at the first micro-bridge structure edge supported hole being set to be used to support first
Bridge structure；Specifically, the entire bottom of the first infrared induction component 106 has first time release guard layer 105；First release aperture
K1 penetrates release guard layer 108 on first, first electrode layer 107, the first infrared induction component 106 and first time release guard layer
105；First infrared induction component 106, positioned at the top of visible light-sensitive area；First electrode layer 107, positioned at the first infrared sense
It answers on component 106, for exporting the electric signal that the first infrared induction component 106 generates；The edge of first electrode layer 107 is beyond the
The edge of one infrared induction component 106；Release guard layer 108 on first covers 107 surface of first electrode layer and is filled in first
In the pattern spacing of electrode layer 107, in the pattern spacing of first electrode layer 107 first on release guard layer 108 bottom with
The top contact of first infrared induction component 106；Wherein, 106 liang of 108 and first infrared induction component of release guard layer on first
There is the first release aperture K1 in first time release guard layer 105 below part that person is in contact and the contact portion；Also,
There is the first cavity 111 in silicon substrate 100 below first release aperture K1.
Second time release guard layer 106 ' of the second infrared induction structure, the second infrared induction component 107 ', second electrode
Release guard layer 109 ' forms the second micro-bridge structure with bumps contoured surface on layer 108 ' and second, release guard on second
Layer 109 ' and second time release guard layer 106 ' coat the second infrared induction component 107 ' and the second electrode lay 108 ' wherein；
Specifically, the entire bottom of the second infrared induction component 107 ' has second time release guard layer 106 '；Second infrared induction portion
Part 107 ', positioned at the top of visible light-sensitive area；The second electrode lay 108 ' on the second infrared induction component 107 ', is used
In the electric signal for exporting the generation of the second infrared induction component 107 '；The edge of the second electrode lay 108 ' exceeds the second infrared induction portion
The edge of part 107 '；Release guard layer 109 ' on second covers 108 ' surface of the second electrode lay and is filled in the second electrode lay
In 108 ' pattern spacing, in the pattern spacing of the second electrode lay 108 ' second on release guard layer 109 ' bottom and second
The top contact of infrared induction component 107 '.Second infrared induction structure both ends can also have supported hole.In the present embodiment, the
Two infrared induction structural tops have the 3rd release aperture K3.
Wherein, the material of contact trench structure is Al or Pt；Release guard layer 108,108 ' and first on first, second,
The material of second time release guard layer 105,105 ' can be silica (SiO2), silicon oxynitride (SiON), silicon nitride (SiN),
The films based on ingredients such as Si, 0, C, N such as carborundum (SiC), can also be non-stoichiometric above-mentioned film, such as it is oxygen-enriched or
The silica of Silicon-rich or the above-mentioned film mixed with elements such as B, P, C or F, such as fluorine silica glass (FSG), Pyrex
(BPSG) or phosphorosilicate glass (PSG) etc..Release guard layer 108 and first time release guard layer 105 are by the first infrared sense on first
It answers component 106 and part that first electrode layer 107 is exposed encases, release guard layer 108 ' and second time release guard on second
Layer 105 ' encases the part that the second infrared induction component 106 ' and the second electrode lay 107 ' are exposed, to carry out release work
During skill, play the role of effectively protecting infrared induction component and electrode layer, while isolation is outer during manufacturing process and use
The pollution and damage on boundary improve the reliability of sensitive material detecting layer, can also avoid electrode layer that short circuit occurs as electrode.The
First, the material of the second infrared induction component 106,106 ' can be non-crystalline silicon or vanadium oxide etc..First, second electrode layer 107,
107 ' material can be titanium, tantalum, titanium nitride stacked on top of one another and titanium or tantalum and tantalum nitride stacked on top of one another.Dielectric layer 104
Material is the silica, silicon oxynitride, nitridation of silica, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric
Silicon and carborundum or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine.The material of separation layer 114 can be with medium
The material identical of layer 104.
Support member 115 is not contacted positioned at the periphery of the second infrared induction structure and with the second infrared induction structure；Support
115 edge of component has supported hole；Supported hole bottom is located at 104 surface of dielectric layer in 110 outside of contact trench structure, support portion
The 3rd cavity 113 is formed between part and the second infrared induction structure；There is the second release aperture K2 at the top of support member；Support portion
The inner surface of part 115 has infrared reflective material or entire support member 115 is infrared reflective material.It should be noted that
Shown in Fig. 1 be device cross-sectional structure schematic diagram, in entire device, between the second infrared induction structure and support member
Gap with connection, for example, on vertical section structure, the edge of the second infrared induction structure does not have side wall, therefore, infrared
There is the gap connected between the edge and support member of induction structure.
Referring to Fig. 2, in another embodiment of the present invention, imaging detector pixel knot is mixed outside double-deck visible red
Structure, including：
One silicon substrate 200, as visible ray filter layer；There is preceding road device 202 in silicon substrate 200；
It can be seen that light-sensitive area, positioned at 200 lower surface of silicon substrate, it is seen that light-sensitive area includes visible photoinduced part part
201 and it will be seen that the contact hole 209 of electric signal output that photoinduction component 201 is formed；Contact hole 209 is used as extraction pole；It can
It can be PN junction to see photoinduction component, using photoelectricity transformation principle, to form the sensing to visible ray；
Road metal interconnection 203 afterwards, rear road metal interconnection 203 are located at 200 upper surface of silicon substrate of 211 both sides of the first cavity；
Road device 202 before being connected with below rear road metal interconnection 203；Here, also there is separation layer in 203 outside of rear road metal interconnection
214, for the isolation between adjacent metal interconnection.
Infrared induction region, positioned at 200 upper surface of silicon substrate, including：
First cavity 211, bottom are located at 200 upper surface of partial silicon substrate, that is to say the bottom of the first cavity 111 with after
The bottom of road metal interconnection 203 flushes；There is infrared reflecting layer 220 in the sidewall surfaces of the first cavity 211, for enhancing to red
The absorption of outer light prevents infrared light from inciding into the loss for causing side-wall material in the side wall of the first cavity.
Dielectric layer 204 is interconnected positioned at road metal behind the part of 211 both sides of the first cavity on 203 and separation layer 214；
Contact trench structure 210, road metal interconnects 203 upper surfaces behind the part of 211 both sides of a cavity；
First infrared induction structure is covered on the first cavity 211, the first infrared induction structural edge and contact trench knot
Structure 210 is connected；First infrared induction structure has the first release aperture K21；
Second infrared induction structure, on the first infrared induction structure, and the second infrared induction structural edge is with connecing
Groove structure 210 is touched to be connected；The second cavity 212 is formed between second infrared induction structure and the first infrared induction structure；
Wherein, the bottom of the first infrared induction structure and the top of contact trench structure 210 are flush；Second infrared induction
Structural edge bottom is connected with 210 top of contact trench structure, and the lower surface of the second infrared induction structural top is red higher than first
Outer induction structure upper surface；Side wall inner surfaces and its top of the upper surface of first infrared induction structure with the second infrared induction structure
The second cavity 212 is formed between portion.First infrared induction structure includes first time release guard layer 205, the first infrared induction portion
Release guard layer 208 on part 206, first electrode layer 207 and first；Second infrared induction structure includes second time release guard layer
Release guard layer 208 ' on 205 ', second infrared induction component 206 ', the second electrode lay 207 ' and second；First electrode layer 207
Bottom be connected with the bottom of the second electrode lay 207 ' and be connected with contact trench structure 210.
Specifically, first time release guard layer 205 of the first infrared induction structure, the first infrared induction component 206, first
Release guard layer 208 forms the first micro-bridge structure with concave-convex contoured surface on electrode layer 207 and first, discharges and protects on first
Sheath 208 and first time release guard layer 205 coat the first infrared induction component 206 and first electrode layer 207 wherein；This
In embodiment, the entire bottom of first time release guard layer 205 is flushed with the top of contact trench structure 210；First microbridge knot
Structure is directly overlapped on 200 upper surface of Silicon Wafer, micro- without at the first micro-bridge structure edge supported hole being set to be used to support first
Bridge structure；Specifically, the entire bottom of the first infrared induction component 206 has first time release guard layer 205；First release aperture
K21 penetrates release guard layer 208 on first, first electrode layer 207, the first infrared induction component 206 and first time release guard
Layer 205；First infrared induction component 206, positioned at the top of visible light-sensitive area；First electrode layer 207, it is infrared positioned at first
Sense on component 206, for exporting the electric signal that the first infrared induction component 206 generates；The edge of first electrode layer 207 exceeds
The edge of first infrared induction component 206；Release guard layer 208 on first covers 207 surface of first electrode layer and is filled in the
In the pattern spacing of one electrode layer 207, in the pattern spacing of first electrode layer 207 first on release guard layer 208 bottom
It is contacted with the top of the first infrared induction component 206；Wherein, 208 and first infrared induction component 106 of release guard layer on first
There is the first release aperture K21 in first time release guard layer 205 below part that the two is in contact and the contact portion；And
And there is the first cavity 211 in the first silicon substrate 200 below release aperture K21.
Second time release guard layer 206 ' of the second infrared induction structure, the second infrared induction component 207 ', second electrode
Release guard layer 209 ' forms the second micro-bridge structure with bumps contoured surface on layer 208 ' and second, release guard on second
Layer 209 ' and second time release guard layer 206 ' coat the second infrared induction component 207 ' and the second electrode lay 208 ' wherein；
Specifically, the entire bottom of the second infrared induction component 207 ' has second time release guard layer 206 '；Second infrared induction portion
Part 207 ', positioned at the top of visible light-sensitive area；The second electrode lay 208 ' on the second infrared induction component 207 ', is used
In the electric signal for exporting the generation of the second infrared induction component 207 '；The edge of the second electrode lay 208 ' exceeds the second infrared induction portion
The edge of part 207 '；Release guard layer 209 ' on second covers 208 ' surface of the second electrode lay and is filled in the second electrode lay
In 208 ' pattern spacing, in the pattern spacing of the second electrode lay 208 ' second on release guard layer 209 ' bottom and second
The top contact of infrared induction component 207 '.Second infrared induction structure both ends can also have supported hole.In the present embodiment, the
Two infrared induction structural tops have the 3rd release aperture K23.
Support member 215 is not contacted positioned at the periphery of the second infrared induction structure and with the second infrared induction structure；Support
215 edge of component has supported hole；Supported hole bottom is located at 204 surface of dielectric layer in 210 outside of contact trench structure, support portion
The 3rd cavity 213 is formed between part and the second infrared induction structure；There is the second release aperture K22 at the top of support member；Support
The inner surface of component 215 has infrared reflective material or entire support member 215 is infrared reflective material.Need what is illustrated
Be shown in Fig. 2 be device cross-sectional structure schematic diagram, in entire device, the second infrared induction structure and support member
Between there is the gap of connection, for example, on vertical section structure, the edge of the second infrared induction structure does not have side wall, therefore,
There is the gap connected between the edge and support member of infrared induction structure.
On release guard layer on contact trench structure, first, second 208,208 ' and first, second time release guard layer
205th, 205 ' material, the material of first, second infrared induction component 206,206 ', first, second electrode layer 207,207 '
Material, the material of dielectric layer 204, the visible associated description referring to structure shown in Fig. 1 of the material of separation layer 214, here no longer
It repeats.
In the preferred embodiment of the present invention, referring to Fig. 3, being mixed into picture outside above-mentioned double-deck visible red to prepare
The preparation method of mixing imaging detector pixel structure outside double-deck visible red is described exemplified by detector pixel structure, including
Following steps：
Step 01：Semi-conductive substrate is provided；And prepare the visible of visible light-sensitive area in Semiconductor substrate lower surface
Photoinduction component and contact component；
Specifically, can be silicon substrate here；The material of silicon substrate can be non-crystalline silicon；It can be seen that photoinduced part part is photoelectricity
Existing method may be employed in the preparation of diode, photodiode and its contact component；Being formed in silicon substrate lower surface can
See photoinduction component, it is seen that light region is located at immediately below infrared induction region, it is seen that photoinduction component can be located at infrared induction
Below component.
Step 02：Separation layer, and the area of the first cavity to be formed in the isolation layer are formed in the upper surface of Semiconductor substrate
Domain both sides form metal interconnection；
Specifically, first, road device before the region below metal interconnection in rear road to be formed is formed, it is then possible to but not
It is limited to form separation layer on a silicon substrate using chemical vapour deposition technique, then, the shape in the separation layer of the top of preceding road device
Cheng Houdao metals interconnect, and common process may be employed in the preparation of rear road metal interconnection, and which is not described herein again.
Step 03：Medium is not being formed by the upper surface of the upper surface of the separation layer of metal interconnection filling and metal interconnection
Layer；
Carry out metallization medium layer specifically, may be employed but be not limited to chemical vapour deposition technique.Dielectric layer can be adopted after being formed
With chemical mechanical milling tech to dielectric layer top surface planarization process.
Step 04：The dielectric layer and separation layer of the first cavity area are removed, to form void region；Then, in vacancy section
The first sacrificial layer is filled in domain；
Specifically, it can be, but not limited to form void region using photoetching and etching technics.It can be, but not limited to use
Chemical vapour deposition technique or cladding process form the first sacrificial layer in void region, make the side wall of the first sacrificial layer material with connecing
The lateral wall for touching groove structure has certain spacing in the horizontal direction, it can be ensured that the first electrode layer that is subsequently formed and the
Two electrode layers are connected with contact trench structure.Chemical mechanical milling tech pair can also be used afterwards by filling the first sacrificial layer
Dielectric layer top surface planarization process so that the first sacrificial layer top surface is flushed with dielectric layer top surface.
Step 05：The contact trench structure is formed in the dielectric layer of the first cavity both sides；
Specifically, can be, but not limited to form contact trench structure using Damascus technics, contact trench structure is used for
During the electric signal output that first, second infrared induction structure generates is interconnected to rear road metal.
Step 06：The first infrared induction structure is formed on the first sacrificial layer and contact trench structure；It is also, red first
The first release aperture is formed in outer induction structure；
Specifically, including：
First, first time release guard layer material and are sequentially formed in the first sacrificial layer and contact trench structure upper surface
One infrared induction material, and infrared induction material and lower release guard layer material are patterned, to form first time release guard layer
With the first infrared induction component, for example, using photoetching and etching technics, protected to etch the edge of infrared induction material and lower release
The edge of jacket material, so that the edge of the edge of the lower release guard layer formed and the infrared induction component formed flushes,
And no more than via top inner wall position, in this way, the infrared induction component and lower release guard layer that are formed would not
Block via top；
Then, metal material, and pattern metal material are formed in infrared induction material surface and through-hole surfaces, to be formed
First electrode layer；The edge of electrode layer is more than the edge of infrared induction material, and is in contact with via top；For example, can be with
Using physical gas-phase deposition, surface deposits one layer of metal material on substrate, then through photoetching and etching technics, in metal
Groove is etched in material, forms first electrode layer；It should be noted that due to being come from the cross section structure of device in attached drawing
Description, though the position display of electrode layer in the accompanying drawings is the surface of interruption, electrode layer can be in the other positions of device
For continuous surface.
Then, release guard layer material on first is formed in first electrode layer surface and its pattern spacing, then pattern
Release guard layer material in change, with release guard layer in formation first, release guard layer is sudden and violent by first electrode layer both ends on first
Expose；The part that release guard layer is filled in the pattern spacing of first electrode layer on first connects with the first infrared induction component
It touches.
Finally, the part that both release guard layer and first infrared induction component are in contact on first forms the first release
Hole.
Step 07：The second sacrificial layer is formed in the first infrared induction superstructure；And the second sacrificial layer is etched, makes second
The side wall of sacrificial layer is no more than the edge of the first infrared induction structure；
Specifically, chemical vapor deposition method or coating may be employed to form the second sacrificial layer material.Can with but not
It is limited to planarize the second sacrificial layer top surface using chemical mechanical milling tech.Here, the side wall of the second sacrificial layer does not surpass
Cross the edge of first electrode layer.
Step 08：The second infrared induction structure is formed in the second sacrificial layer surface；The edge of second infrared induction structure with
Contact trench structure is connected；
Specifically, it can be, but not limited to sequentially form second time release guard layer, the second infrared induction component, second electrode
Release guard layer on layer and second, the step of deposition step is included during forming each layer and patterns this layer；Also wrap
It includes and forms the 3rd release aperture in the second infrared induction structural top, the 3rd release aperture can be more advantageous to dischargeing in release process
The material of required release；Release guard layer and second time release guard layer are by the second infrared induction component and electrode layer bag on second
It covers；In other embodiments of the invention, the formation order of the second electrode lay and the second infrared induction component can exchange；It should
Release aperture can not also be formed in second infrared induction structure.Here, the bottom of first electrode layer and the bottom of the second electrode lay
It is connected and is connected with contact trench structure.
Step 09：3rd sacrifice layer is formed on dielectric layer and the second infrared induction structure；And it patterns the 3rd to sacrifice
Layer, forms groove in 3rd sacrifice layer；The bottom-exposed of groove goes out the part surface of the dielectric layer on the outside of contact trench structure；
It, can be with specifically, it is possible, firstly, to form 3rd sacrifice layer material using chemical vapor deposition method or coating
But it is not limited to planarize 3rd sacrifice layer top surface using chemical mechanical milling tech.It is then possible to it but is not limited to use
Photoetching and etching technics form groove in 3rd sacrifice layer fringe region, and groove is located on the outside of the second infrared induction structure, groove
For forming subsequent supported hole.
Step 10：One layer of backing material is deposited in 3rd sacrifice layer surface and groove, so as to form support member, and
Second release aperture is formed at the top of support member；
Specifically, in this implementation, it is infrared to being absorbed without first, second infrared induction structure using infrared reflective material
Light is reflected, and first, second infrared induction structure is made to reabsorb infrared light, so as to thoroughly absorb incident infrared light；
Inner surface at the top of support member has infrared reflective material, such as forms infrared reflective material in 3rd sacrifice layer top surface
Layer or the inner surface of entire support member have infrared reflective material, such as are having fluted 3rd sacrifice layer whole table
Face forms infrared reflective material；Then the 3rd sacrifice layer surface not being blocked in infrared reflective material and deposits one layer of fid
Material；Or entire support member can be infrared reflective material, have the support member of supported hole so as to form fringe region.
Step 11：Pass through the gap connected between the second infrared induction structure and support member, the first release aperture
And second release aperture carry out release process, the first sacrificial layer, the second sacrificial layer and 3rd sacrifice layer are discharged, so as to respectively
Form the first cavity, the second cavity and the 3rd cavity.
Specifically, since support member is located at the second infrared induction structure peripheral and does not contact, the second infrared induction
There is the gap connected, therefore, second under the second infrared induction structure sacrifices between some edges and support member of structure
Layer material can be discharged by the second infrared induction structure with the gap connected of support member.In the present embodiment, due to
Second infrared induction structural top also has the 3rd release aperture, so, the second sacrificial layer material also passes through the second infrared sense simultaneously
The 3rd release aperture of structural top is answered to discharge.When the material of first, second, third sacrificial layer is non-crystalline silicon, then use
XeF2As release gas, whole sacrificial layer materials are removed, at this point, the material of upper release guard layer and lower release guard layer is
The composite material of silica and aluminium.In another embodiment of the invention, when first, second, third sacrificial layer material is
During silica, gaseous hydrogen fluoride may be employed as release gas, whole sacrificial layer materials is removed, at this point, upper release is protected
The material of sheath and lower release guard layer is silicon nitride or silicon etc..In another embodiment of the present invention, when first, second,
When three sacrificial layer materials are organic matter, such as O may be employed in photoresist, polyimides2As release gas, by the sacrificial of whole
Domestic animal layer material removes, at this point, the material of upper release guard layer and lower release guard layer is inorganic material.
In conclusion the present invention transmission performance enhancing double-deck visible red outside mix imaging detector pixel structure and
Its preparation method, it will be seen that light-sensitive area and infrared induction regional ensemble in the chips, cleverly by the use of wafer as light mistake
Filtering layer, without in addition setting light filter layer, also, in used double infrared induction structures, below the first infrared induction structure
There is provided cavity, above two structure causes the height of the device to be formed in vertical direction to reduce, so as to reduce device
Volume reduces processing step and has saved cost, makes it possible to be mixed into as micromation, chip outside visible red；This
Outside, cavity is formed in wafer, it is possible to reduce loss of the light in longer path communication process improves transmissivity, so as to carry
The high mixing image quality of device；Moreover, forming double infrared induction structures on a semiconductor substrate, can increase to infrared light
Absorptivity, further improve mixing image quality.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrate only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (10)
1. a kind of two-layer hybrid imaging detector pixel structure, which is characterized in that including：
Semi-conductive substrate, as visible ray filter layer；
It can be seen that light-sensitive area, positioned at the Semiconductor substrate lower surface, the visible light-sensitive area includes visible photoinduction
Component and contact component；
Metal interconnects, positioned at the Semiconductor substrate upper surface；
Infrared induction region positioned at Semiconductor substrate upper surface, and has double-deck infrared induction structure, including：
First cavity, in the Semiconductor substrate；The metal interconnection is partly led positioned at the described of the first cavity both sides
Body substrate top surface；
Separation layer, the semiconductor substrate surface positioned at metal interconnection outside；
Dielectric layer, in the part metal interconnection and the separation layer；
Contact trench structure, the metal positioned at the first cavity both sides interconnect upper surface；
First infrared induction structure is covered on first cavity, and the first infrared induction structural edge is contacted with described
Groove structure is connected；The first infrared induction structure has the first release aperture；
Second infrared induction structure, on the first infrared induction structure, and the second infrared induction structural edge
It is connected with the contact trench structure；Second is formed between the second infrared induction structure and the first infrared induction structure
Cavity；
Support member is not contacted positioned at the periphery of the second infrared induction structure and with the second infrared induction structure；Institute
Stating the edge of support member has supported hole, and the top of the support member has the second release aperture；Supported hole bottom position
On the dielectric layer on the outside of the contact trench structure；Have between the support member and the second infrared induction structure
There is the 3rd cavity, and there is the gap of connection between the second infrared induction structure and the support member；The support
It is infrared reflective material that the inner surface of component, which has infrared reflective material or the entire support member,；
Wherein, it is seen that light and infrared light are injected from the Semiconductor substrate lower surface, pass through the visible light-sensitive area, part
The visible ray is absorbed by the visible photoinduced part part；After the Semiconductor substrate filters out visible ray, infrared light
Enter first cavity after the Semiconductor substrate, subsequently into the first infrared induction structure and part it is described infrared
Light is absorbed by the first infrared induction structure；It is not continued across by the infrared light that the first infrared induction structure absorbs described
Second cavity is absorbed into the second infrared induction structure and the part infrared light by the second infrared induction structure；Not
By the infrared light that the second infrared induction structure absorbs into the 3rd cavity, then reflected by the infrared reflective material
The second infrared induction structure is returned to, and then is absorbed by the infrared induction structure.
2. two-layer hybrid imaging detector pixel structure according to claim 1, which is characterized in that first cavity side
Wall surface has infrared reflecting layer, for enhancing the absorption to infrared light, prevents the infrared light from inciding into first cavity
Side wall in.
3. two-layer hybrid imaging detector pixel structure according to claim 1, which is characterized in that the first infrared sense
The bottom of structure is answered with being flush at the top of the contact trench structure；The second infrared induction structural edge bottom with it is described
Contact trench structural top is connected, and the lower surface of the second infrared induction structural top is higher than the first infrared induction structure
Upper surface；Side wall inner surfaces and its top of the upper surface of the first infrared induction structure with the second infrared induction structure
Between form second cavity.
4. two-layer hybrid imaging detector pixel structure according to claim 3, which is characterized in that the second infrared sense
Answer structural top that there is the 3rd release aperture.
A kind of 5. preparation method of two-layer hybrid imaging detector pixel structure described in claim 1, which is characterized in that bag
It includes：
Step 01：Semi-conductive substrate is provided；And prepare the visible light-sensitive area in the Semiconductor substrate lower surface
The visible photoinduced part part and the contact component；
Step 02：Separation layer is formed in the upper surface of the Semiconductor substrate, and to be formed described first in the separation layer
The region both sides of cavity form the metal interconnection；
Step 03：Not by the upper surface of the separation layer of metal interconnection filling and the upper surface shape of metal interconnection
Into the dielectric layer；
Step 04：The dielectric layer of first cavity area and the separation layer are removed, to form void region；Then,
The first sacrificial layer is filled in the void region；
Step 05：The contact trench structure is formed in the dielectric layer of the first cavity both sides；
Step 06：The first infrared induction structure is formed on first sacrificial layer and the contact trench structure；Also,
First release aperture is formed in the first infrared induction structure；
Step 07：The second sacrificial layer is formed in the first infrared induction superstructure；And second sacrificial layer is etched, is made
The side wall of second sacrificial layer is no more than the edge of the first infrared induction structure；
Step 08：The second infrared induction structure is formed in second sacrificial layer surface；The second infrared induction structure
Edge be connected with the contact trench structure；
Step 09：3rd sacrifice layer is formed on the dielectric layer and the second infrared induction structure；And described in patterning
3rd sacrifice layer forms groove in the 3rd sacrifice layer；The bottom-exposed of the groove goes out outside the contact trench structure
The part surface of the dielectric layer of side；
Step 10：One layer of backing material is deposited in the 3rd sacrifice layer surface and the groove, so as to form the support
Component, and second release aperture is formed at the top of the support member；
Step 11：Pass through the gap connected between the second infrared induction structure and the support member, described
One release aperture and second release aperture carry out release process, by first sacrificial layer, second sacrificial layer and described
3rd sacrifice layer discharges, so as to be respectively formed first cavity, second cavity and the 3rd cavity.
6. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, which is characterized in that described
In step 04, after the dielectric layer and the separation layer that remove first cavity area, and it is sacrificial filling described first
Before domestic animal layer, including：Sidewall surfaces in the void region form infrared reflecting layer.
7. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, which is characterized in that described
First infrared induction structure in first time release guard layer, the first infrared induction component, first electrode layer and first including discharging
Protective layer；The second infrared induction structure include second time release guard layer, the second infrared induction component, the second electrode lay and
Release guard layer on second；In the step 07, the side wall of second sacrificial layer is no more than the edge of the first electrode layer；
In the step 08, the bottom of the first electrode layer be connected with the bottom of the second electrode lay and with the contact trench
Structure is connected.
8. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 7, which is characterized in that work as institute
When stating the material of the first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer and being non-crystalline silicon, using XeF2As
Gas is discharged, first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer are removed, at this point, being released on described
The material of protective layer and the lower release guard layer is put as silica and the composite material of aluminium；Or when the described first sacrifice
When the material of layer, second sacrificial layer and the 3rd sacrifice layer is silica, gaseous hydrogen fluoride conduct may be employed
Gas is discharged, the material of first sacrificial layer, second sacrificial layer and the 3rd sacrifice layer is removed, at this point, institute
The material for stating release guard layer and the lower release guard layer is silicon nitride or silicon；Or when first sacrificial layer, described
When second sacrificial layer and the material of the 3rd sacrifice layer are organic matter, O may be employed2It, will be complete described as release gas
First sacrificial layer, second sacrificial layer and the 3rd sacrifice layer material removal, at this point, the upper release guard layer and
The material of the lower release guard layer is inorganic material.
9. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, which is characterized in that described
In step 08, further include：The 3rd release aperture is formed in the second infrared induction structural top；It is described to release in the step 11
Technique is put further include through the 3rd release aperture.
10. the preparation method of two-layer hybrid imaging detector pixel structure according to claim 5, which is characterized in that institute
Stating step 05 includes：The pattern of the contact trench structure is formed using photoetching and etching technics, then, in the contact ditch
Conducting metal is filled in the pattern of slot structure.
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