CN105161508B - Strengthen mixing imaging detector pixel structure of infrared breathability and preparation method thereof - Google Patents
Strengthen mixing imaging detector pixel structure of infrared breathability and preparation method thereof Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
Mixing imaging detector pixel structure the present invention provides enhancing infrared breathability and preparation method thereof, it will be seen that light-sensitive area and infrared induction regional ensemble are in the chips, infrared anti-reflection material with smooth bulged surface is formed by the crystal column surface below infrared induction component and above visible photoinduced part part, along with the wafer filtering to visible ray in itself, the ratio that infrared light enters micro-bridge structure can be improved, and then the image quality of infrared induction component is improved, and make it possible to be mixed into as micromation, chip outside visible red.
Description
Technical field
The present invention relates to microelectronics technology, and in particular to a kind of mixing imaging detector picture for strengthening infrared breathability
Meta structure and preparation method thereof.
Background technology
With industry and the development of living standard, simple infrared imaging or simple visual light imaging have been unable to meet
Demand, there is more broadband imaging technique increasingly to attract attention, particularly can be at the same time to visible ray and infrared photaesthesia
Imaging technique.
However, in existing mixing image device, using two light paths of lens forming come respectively to visible ray and infrared light
Carry out induction image forming, be finally synthesized together using computer processing system, by the separation of light path cause to be formed it is infrared
Image section and visible images part produce larger deviation of the alignment, seriously affect image quality.
Due to microelectromechanical systems (MEMS) technology have it is small, intelligent, executable, can integrate, processing compatibility is good,
The plurality of advantages such as cost is low, if can be combined hybrid imaging technology with microelectric technique, work out microelectronics technology
Hybrid imaging technology, the deviation of the alignment that can avoid the problem that existing infrared image and visible images is big.
The content of the invention
In order to overcome problem above, the present invention is intended to provide being mixed into picture outside a kind of visible red for strengthening infrared breathability
Detector pixel structure and preparation method thereof, infrared energy is passed through using with the infrared anti-reflection material of round and smooth convex surfaces to strengthen
Power, so that by hybrid imaging technology micromation and chip, improves the quality for being mixed into picture.
To achieve these goals, the present invention provides one kind to mix imaging detector pixel structure, it includes：
One wafer, as visible ray filter layer；
Infrared induction region above the wafer with lower surface and visible light-sensitive area respectively；And
Electric signal for the visible light-sensitive area and the infrared induction region to be exported is calculated and turned
It is changed to the converting unit of image；Wherein,
It can be seen that light-sensitive area, positioned at the wafer lower surface, it includes visible photoinduced part part and by the visible ray
The extraction pole for the electric signal output that sensing component is formed；
Interconnection layer, positioned at the wafer upper surface；
Dielectric layer, positioned at the upper surface of the interconnection layer；
Groove, in the interconnection layer and the dielectric layer, and corresponding to the visible photoinduced part part top；
Infrared anti-reflection material, is filled in the groove, has round and smooth convex surfaces, for round and smooth convex surfaces,
For strengthening the permeability of incident infrared light and converging incident infrared light；；
Contact trench structure, in the dielectric layer of the infrared anti-reflection material both sides；
Infrared induction region, positioned at the infrared anti-reflection material and the contact trench superstructure, it includes infrared sense
Answer structure；The infrared induction structure includes：Lower release guard layer, infrared induction component, electrode layer and upper release guard layer；Institute
The top that infrared induction component corresponds to the infrared anti-reflection material is stated, for absorbing infrared light, and produces electric signal；It is described red
The edge of outer induction structure has the first supported hole, and the first supported hole bottom is located at the contact trench structure upper surface,
And the electrode layer of the first supported hole bottom is connected with the contact trench structure, for by the infrared induction portion
The electric signal output that part produces；The top of the infrared induction structure has the first release aperture；The infrared induction structure and institute
Stating between infrared anti-reflection material has the first cavity；
Support member, does not contact, the branch positioned at the periphery of the infrared induction structure, and with the infrared induction structure
Support edge-of-part has the second supported hole, and the second supported hole bottom be located at the dielectric layer upper surface, with the at the top of it
Two release apertures；There is the second cavity, and infrared induction structure and supporting part between the support member and the micro-bridge structure
There is the gap of connection between part；
Wherein, it is seen that light and infrared light are injected from the wafer lower surface, pass through the visible light-sensitive area, part institute
Visible ray is stated to be absorbed by the visible light-sensitive area；Then, filtered out not by the visible light-sensitive area through the wafer
The visible ray of absorption, infrared light are incided after the infrared anti-reflection material on the infrared induction component and by the infrared sense
Answer component to absorb and produce electric signal and be transported to the converting unit, so as to generate the outer mixed image of visible red.
Preferably, the structure of the infrared anti-reflection material is pellicle mirror structure.
Preferably, the infrared anti-reflection material is silicon, germanium silicon or selenium sulfide.
Preferably, the top of the infrared anti-reflection material and dielectric layer top are flush or below the dielectric layer top
Portion.
Preferably, the inner surface at the top of the support member or the whole inner surface of the support member have infrared
Layer of reflective material or the whole support member are infrared reflective material, and the infrared reflective material is used for will be without described red
The infrared light reflection that outer sensing component absorbs is absorbed by the infrared induction component on the infrared induction component.
Preferably, the infrared induction structure is top with concavo-convex contoured surface and edge is with the micro- of the first supported hole
Bridge structure, the infrared induction component are infrared-sensitive material layer, and the upper release guard layer will with the lower release guard layer
The part that the infrared-sensitive material layer and the electrode layer are exposed covers.
To achieve these goals, present invention also offers imaging detector pixel structure is mixed outside a kind of visible red
Preparation method, it comprises the following steps：
Step 01：One wafer is provided, the visible light-sensitive area is formed in the wafer lower surface；
Step 02：The interconnection layer is formed in the wafer upper surface；
Step 03：The dielectric layer is formed on the interconnection layer, is etched in the dielectric layer and the interconnection layer
The groove, forms the infrared anti-reflection material with the round and smooth convex surfaces in the groove；
Step 04：The contact trench structure is formed in the dielectric layer of the infrared anti-reflection material both sides；
Step 05：First is formed on the contact trench structure, the dielectric layer and the infrared anti-reflection material to sacrifice
Layer；
Step 06：First groove is formed in first sacrifice layer corresponding to the contact trench superstructure；Institute
State the surface that first groove bottom-exposed goes out the contact trench structure；
Step 07：The infrared induction structure is formed on first sacrifice layer with the first groove, then
The first release aperture is formed in the infrared induction structural top；Wherein, the electrode layer of the first supported hole bottom and institute
Contact trench structure is stated to be connected；
Step 08：The second sacrifice layer is formed on the wafer for completing the step 07；
Step 09：In second sacrifice layer above the dielectric layer on the outside of corresponding to the contact trench structure
Form second groove；The second groove bottom-exposed goes out the surface of the dielectric layer；
Step 10：The support member is formed on second sacrifice layer with the second groove, in the branch
Support component top and form the second release aperture；
Step 11：Pass through the gap of the connection between the support member and the infrared induction structure, described
One release aperture and second release aperture carry out release process, and first sacrifice layer and second sacrifice layer are discharged,
So as to form first cavity and second cavity.
Preferably, the structure of the infrared anti-reflection material is pellicle mirror structure；The infrared increasing of the pellicle mirror structure
The formation of saturating material includes：First, the infrared anti-reflection material is filled in the groove using CVD or spin coating proceeding, and put down
The top of the smoothization infrared anti-reflection material；Then, the graphical infrared anti-reflection material and the institute in the groove is only retained
State infrared anti-reflection material；Then, by high-temperature process, the pellicle mirror structure is obtained after cooling.
Preferably, the high-temperature process is laser annealing technique.
Preferably, the structure of the infrared anti-reflection material is pellicle mirror structure；The infrared increasing of the pellicle mirror structure
The formation of saturating material includes：First, filled out by CVD or spin coating proceeding in the groove and fill the infrared anti-reflection material, and
Planarize the top of the infrared anti-reflection material；Then, the graphical infrared anti-reflection material and only retain in the groove
The infrared anti-reflection material；Then, using grayscale photolithography plate figure, i.e., described photolithography plate figure iuuminting by center around
Gradually reduce, to be formed with semi-transparent specular photoetching offset plate figure, then, etched technique forms the pellicle mirror structure.
Preferably, in the step 03, the infrared anti-reflection is deposited in the groove using chemical vapor deposition method
Material.
Preferably, in the step 03, the top of the infrared anti-reflection material with the top of the dielectric layer flush or below
At the top of the dielectric layer.
Preferably, in the step 10, before the support member is formed, further include：With second ditch
Infrared reflective material is formed on second sacrifice layer of groove, or in second sacrifice layer with the second groove
The infrared reflective material is formed on top.
Preferably, the material of the support member is infrared reflective material.
Mixing imaging detector pixel structure of the present invention and preparation method thereof, it will be seen that light-sensitive area and infrared induction
Regional ensemble in the chips, is formed red by the crystal column surface below infrared induction component and above visible photoinduced part part
Outer antireflective material, along with the wafer filtering to visible ray in itself, can improve the ratio that infrared light enters micro-bridge structure, and then
The image quality of infrared induction component is improved, and makes it possible to be mixed into as micromation, chip outside visible red.
Brief description of the drawings
Fig. 1 is the cross section structure schematic diagram of the mixing imaging detector pixel structure of the preferred embodiment of the present invention
Fig. 2 is that the flow of the production method of the mixing imaging detector pixel structure of the preferred embodiment of the present invention is shown
It is intended to
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The mixing imaging detector pixel structure of the present invention, including：Wafer as visible ray filter layer；Respectively positioned at crystalline substance
Circle top and infrared induction region and the visible light-sensitive area of lower surface；And for will be seen that light-sensitive area and infrared sense
Answer the electric signal that region is exported to be calculated and be converted to the converting unit of image；Wherein, it is seen that light-sensitive area, positioned at crystalline substance
Circle lower surface, it includes visible photoinduced part part and it will be seen that the extraction pole for the electric signal output that photoinduction component is formed；Position
Interconnection layer in wafer upper surface；Dielectric layer positioned at the upper surface of interconnection layer；In interconnection layer and dielectric layer, and correspond to
It can be seen that the groove above photoinduced part part；The infrared anti-reflection material being filled in groove, has round and smooth raised surface, it is used for
Strengthen the permeability of incident infrared light and converge incident infrared light, so that it is anti-to prevent that incident infrared light from occurring
Penetrate；Contact trench structure in the dielectric layer of infrared anti-reflection material both sides；Infrared sense above infrared anti-reflection material
Region is answered, it includes infrared induction structure；Infrared induction structure includes：Lower release guard layer, infrared induction component, electrode layer and
Upper release guard layer；Infrared induction component corresponds to the top of infrared anti-reflection material, for absorbing infrared light, and produces telecommunications
Number；The edge of infrared induction structure has the first supported hole, and the first supported hole bottom is located at contact trench structure upper surface, and
The electrode layer of first supported hole bottom is connected with contact trench structure, for the electric signal output for producing infrared induction component；
The top of infrared induction structure has the first release aperture；There is the first cavity between infrared induction structure and infrared anti-reflection material；
There is second positioned at the periphery of infrared induction structure and with the discontiguous support member of infrared induction structure, support member edge
Hole is supportted, the second supported hole bottom is located at dielectric layer upper surface, its top has the second release aperture；Support member and infrared induction knot
There is the second cavity between structure, and there is the gap connected between infrared induction structure and support member；
First cavity increases the distance between infrared induction structure and wafer, plays infrared induction structure and wafer and Jie
Effect is thermally isolated between matter layer；Second cavity is resonator, and the infrared light for will be absorbed without infrared induction structure carries out
It is repeated multiple times to reflex in infrared induction structure, so as to fulfill fully absorbing to incident infrared light.
During detection, it is seen that light and infrared light are injected from wafer lower surface, pass through visible light-sensitive area, it is seen that light is visible
Light-sensitive area absorbs；Then, the visible ray not absorbed by visible light-sensitive area, remaining infrared light warp are filtered out through wafer
Incided after infrared anti-reflection material on infrared induction component and absorbed by infrared induction component and produce electric signal and be transported to conversion
Unit, so as to generate the outer mixed image of visible red.
Below in conjunction with the mixing imaging detector pixel structure of attached drawing 1-2 and specific embodiment to the present invention and its preparation side
Method is described in further detail.It should be noted that attached drawing is using very simplified form, using non-accurate ratio, and only
Conveniently, clearly to achieve the purpose that to aid in illustrating the present embodiment.
Referring to Fig. 1, in one embodiment of the invention, the direction of arrow represents that light injects direction, is mixed into as visiting
Device pixel structure is surveyed, including：
One Silicon Wafer 100, its upper surface have interconnection layer 101；There is preceding road device 114 in Silicon Wafer 100；Preceding logos and utensils
Part 114 is located at both sides above visible light-sensitive area VS, and positioned at the lower section of interconnection layer 101；
It can be seen that light-sensitive area VS, positioned at 100 lower surface of wafer, it includes visible photoinduced part part and it will be seen that photoinduction
First contact hole 113 of the electric signal output that component is formed, the first contact hole is as the first extraction pole；It can be seen that photoinduced part part
Can be PN junction, using photoelectricity transformation principle, to form the sensing to visible ray；
Dielectric layer 102, it is located on interconnection layer 101；
Groove is located in interconnection layer 101 and dielectric layer 102, is filled with the infrared increasing with round and smooth convex surfaces in a groove
Saturating material 112；Here, the structure of infrared anti-reflection material 112 is half convex lens structures；Infrared anti-reflection material 112 for silicon, germanium silicon or
Person's selenium sulfide.The infrared anti-reflection material of pellicle mirror structure is used for the permeability for strengthening incident infrared light and converges incident
Infrared light so that by the infrared light of infrared anti-reflection material can be more bring together, to strengthen infrared induction knot
The absorptivity and raising induction sensitivity of structure.
Formed with contact trench structure 103 in the dielectric layer 102 of 112 both sides of infrared anti-reflection material；Here, infrared anti-reflection
The top of material can fill full groove with dielectric layer top flush or below dielectric layer top, that is, infrared anti-reflection material,
Or infrared anti-reflection material can not also fill full groove.
Infrared induction region IR, above wafer 100, including infrared induction structure, the infrared induction in the present embodiment
Structure is top with the concavo-convex micro-bridge structure of contoured surface and edge with the first supported hole 110, the top tool of micro-bridge structure
There is the first release aperture K1, micro-bridge structure includes successively from the bottom up：Lower release guard layer 104, infrared-sensitive material layer 105, electricity
Pole layer 106 and upper release guard layer 107, the infrared induction component of the conduct of infrared-sensitive material layer 105 here；The top of electrode layer 106
Portion has some grooves, and the top of infrared-sensitive material layer 105 is in continuous flat surfaces, and upper release guard layer 107 is based on electricity
Pole layer 106 shape and form ups and downs top；Upper release guard layer 107 and lower release guard layer 104 are by infrared-sensitive
The part that material layer 105 and electrode layer 106 expose covers；Electrode layer 106 positioned at 110 bottom of the first supported hole is with contacting ditch
Slot structure 103 contacts, for the electric signal output for producing infrared-sensitive material layer 105；Micro-bridge structure and infrared anti-reflection material
There is the first cavity between 112.First cavity can be by the interconnection layer and infrared anti-reflection at the top of micro-bridge structure with crystal column surface
Material 112 is kept apart.
Support member 108, does not contact positioned at the periphery of micro-bridge structure, and with micro-bridge structure, and 108 edge of support member has
Second supported hole 111,111 bottom of the second supported hole are connected with dielectric layer 102, and the top of support member 108 has release aperture K2；
The inner surface at the top of support member 108 or the inner surface of whole support member 108 have infrared reflective material or whole branch
Support part part 108 is infrared reflective material；Infrared reflective material is used to arrive the infrared light reflection absorbed without infrared induction component
On infrared induction component, and then absorbed by infrared induction component.There is the second cavity between support member 108 and micro-bridge structure.
Second cavity is as resonator.It should be noted that the cross-sectional structure schematic diagram for device shown in Fig. 1, whole device
There is the gap connected in part, between infrared induction structure and support member, for example, on longitudinal section, infrared induction structure
Edge does not have supported hole, therefore, between the edge and support member of infrared induction structure has the gap connected.
Converting unit, for will be seen that electric signal that photoinduction component and infrared induction component are exported is calculated and turned
It is changed to image.
Wherein, the material filled in contact trench structure 103 can be Al or Pt；The material of dielectric layer 102 is dioxy
The silica of SiClx, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, silicon oxynitride, silicon nitride and carborundum,
Or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine；The material of upper release guard layer 107 and lower release guard layer 104
Material can be silica (SiO2), silicon oxynitride (Si0N), silicon nitride (SiN), carborundum (SiC) etc. based on Si, 0, C, N etc. into
Point film, can also be non-stoichiometric above-mentioned film, such as oxygen-enriched or Silicon-rich silica, or mixed with B, P,
The above-mentioned film of the elements such as C or F, such as fluorine silica glass (FSG), Pyrex (BPSG) or phosphorosilicate glass (PSG) etc..Upper release
Protective layer 107 and lower release guard layer 104 surround infrared-sensitive material layer 105 and electrode layer 106, to carry out release work
During skill, play the role of effectively protecting infrared-sensitive material layer 105 and electrode layer 106, while in manufacturing process and use process
Middle isolation extraneous pollution and damage, improve the reliability of the detection of infrared-sensitive material, can also avoid electrode layer as electricity
Short circuit occurs for pole.The material of infrared-sensitive material layer 105 can be non-crystalline silicon or vanadium oxide etc..The material of electrode layer 106 can be with
For titanium, tantalum, titanium nitride stacked on top of one another and titanium or tantalum and tantalum nitride stacked on top of one another.
Make below in conjunction with the preparation method of the mixing imaging detector pixel structure of attached drawing 2 and specific embodiment to the present invention
It is further described.It should be noted that attached drawing is using very simplified form, using non-accurate ratio, and only to
Conveniently, clearly achieve the purpose that to aid in illustrating the present embodiment.
In the preferred embodiment of the present invention, referring to Fig. 2, the system to above-mentioned mixing imaging detector pixel structure
Preparation Method, comprises the following steps：
Step 01：One wafer is provided, visible light-sensitive area is formed in wafer lower surface；
Specifically, it is Silicon Wafer here；It can be seen that the preparation of visible the photoinduced part part and its extraction pole in light-sensitive area
Existing method can be used, the present invention repeats no more this.
Step 02：Interconnection layer is formed in wafer upper surface；
Specifically, the forming method of interconnection layer can use existing process.
Step 03：Dielectric layer is formed on interconnection layer, groove is etched in dielectric layer and interconnection layer, is formed in a groove
The infrared anti-reflection material with the round and smooth convex surfaces；
Specifically, one layer of dielectric layer can be deposited on interconnection layer using chemical vapor deposition method, it is then possible to using
Photoetching and etching technics, groove is etched in dielectric layer and interconnection layer；Then, gas-phase deposition can be used in a groove
Deposit infrared anti-reflection material.The top of infrared anti-reflection material is with dielectric layer top flush or below at the top of dielectric layer.Here, it is infrared
The structure of antireflective material is pellicle mirror structure；The formation of the infrared anti-reflection material of pellicle mirror structure includes：First, using CVD or
Spin coating proceeding fills infrared anti-reflection material in a groove, and planarizes the top of infrared anti-reflection material；Then, graphical infrared increasing
Saturating material simultaneously only retains the infrared anti-reflection material in groove；Then, by the high-temperature process of laser annealing technique, after cooling by
Pellicle mirror structure is obtained in the effect of surface tension.
In another embodiment of the invention, the formation of the infrared anti-reflection material of pellicle mirror structure includes：First, pass through
CVD or spin coating proceeding fill out filling infrared anti-reflection material, and planarize the top of infrared anti-reflection material in a groove；Then, figure
Change infrared anti-reflection material and only retain the infrared anti-reflection material in groove；Then, grayscale photolithography plate figure, i.e. photolithography plate figure are utilized
Shape iuuminting is gradually reduced around by center, to be formed with semi-transparent specular photoetching offset plate figure, then, etched technique
Form pellicle mirror structure.
Step 04：Contact trench structure is formed in the dielectric layer of infrared anti-reflection material both sides；
Specifically, contact trench structure can be formed using Damascus technics, it is included in contact trench structure and fills out
Conductive metallic material is filled, is then planarized conductive metallic material top surface using chemical mechanical grinding, in favor of follow-up
The deposition of one sacrificial layer material and be conducive to obtain the first flat sacrificial layer material surface.
Step 05：The first sacrifice layer is formed on contact trench structure, dielectric layer and infrared anti-reflection material；
Specifically, the first sacrifice layer can be formed using chemical vapor deposition method or coating；
Step 06：First groove is formed in the first sacrifice layer corresponding to contact trench superstructure；First groove bottom
Portion exposes the surface of contact trench structure；
Specifically, in order to be subsequently formed the first supported hole during the formation of first groove.Photoetching and etching technics can be used
To form first groove.
Step 07：Infrared induction structure is formed on the first sacrifice layer with first groove, then in infrared induction knot
The first release aperture is formed at the top of structure；Wherein, the electrode layer of the first supported hole bottom is connected with contact trench structure；
Specifically, in the present embodiment, micro-bridge structure top is with concavo-convex contoured surface and edge is with the first supported hole；
In micro-bridge structure, infrared induction component is infrared-sensitive material layer；Electrode layer is located at infrared-sensitive material layer upper surface, electrode layer
Top there are some grooves, the top of infrared-sensitive material layer is in continuous flat surfaces, the preparation method of the micro-bridge structure
Including：
Step 071：Release guard layer under being deposited on the first sacrifice layer and in the first supported hole, etches lower release guard
Layer pattern, while the lower release guard layer segment positioned at the first supported hole bottom is etched away, expose electrode layer；
Step 072：Infrared-sensitive material is deposited with the electrode layer surface exposed on lower release guard layer, is etched red
Outer sensitive material layer pattern, while etch away the infrared-sensitive material layer segment positioned at the first supported hole bottom；
Step 073：In infrared-sensitive material layer surface and the first supported hole bottom deposit metal material, and etch figure
Case, while multiple grooves are formed in metal material, so as to form electrode layer；Multiple bottom portion of groove of electrode layer are by infrared-sensitive
Material layer is exposed；Correspondence flushes respectively for the both ends of infrared-sensitive material layer and the both ends of electrode layer.
Step 074：Release guard layer is formed in the infrared-sensitive material layer surface of electrode layer and exposure.
In other embodiments of the invention, in micro-bridge structure, electrode layer is located at infrared-sensitive material layer lower surface, electrode
The top of layer has some grooves, and the top of infrared-sensitive material layer is in continuous concavo-convex contoured surface, the system of the micro-bridge structure
Preparation Method includes：
Step 071：Release guard layer under being deposited on the first sacrifice layer and in the first supported hole, etches lower release guard
Layer pattern, while the lower release guard layer segment positioned at the first supported hole bottom is etched away, expose electrode layer；
Step 072：On lower release guard layer and the electrode layer surface deposition of electrode material that exposes, and etch electrode
Layer pattern, while multiple grooves are formed in electrode material, so as to form electrode layer；Multiple bottom portion of groove of electrode layer are released by under
Protective layer is put to be exposed；
Step 073：Release guard layer surface deposition infrared-sensitive material, etching under the part of electrode layer surface and exposure
Go out infrared-sensitive material layer pattern, so as to form infrared-sensitive material layer；The both ends of infrared-sensitive material layer and electrode layer
Correspondence flushes respectively at both ends；
Step 074：Release guard layer is formed in infrared-sensitive material layer surface.
Step 08：The second sacrifice layer is formed on the wafer for completing step 07；
Specifically, the formation of the second sacrifice layer can be, but not limited to using coating or other chemical vapor deposition methods.The
The material identical of the material of two sacrifice layers and the first sacrifice layer.
Step 09：The second ditch is formed in the second sacrifice layer above dielectric layer on the outside of corresponding to contact trench structure
Groove；Second groove bottom-exposed goes out the surface of dielectric layer；
Specifically, in order to be subsequently formed the second supported hole during the formation of second groove.Photoetching and etching technics can be used
To form second groove.
Step 10：Support member is formed on the second sacrifice layer with second groove, is formed at the top of support member
Two release apertures；
Specifically, in the present embodiment, infrared reflective material layer can be used red to being absorbed without infrared-sensitive material layer
Outer light is reflected, and infrared-sensitive material layer is absorbed it, so that the infrared light of incidence is thoroughly absorbed, preferably, supporting
The inner surface of component top or the inner surface of whole support member have infrared reflective material layer；First, with the second ditch
Infrared reflective material is formed on second sacrifice layer of groove, or is formed at the top of the second sacrifice layer with second groove infrared
Reflecting material, then deposits one layer of support member in infrared reflective material layer and the second sacrificial layer surface not being blocked；Or
Whole support member can be infrared reflective material.
Step 11：Released by the gap of the connection between support member and infrared induction structure, the first release aperture and second
Discharge hole carries out release process, the first sacrifice layer and the second sacrifice layer is discharged, so as to form the first cavity and the second cavity.
Specifically, when the material of the first sacrifice layer and the second sacrifice layer is non-crystalline silicon, then using XeF2As release gas
Body, the first sacrifice layer and the second sacrifice layer is removed, at this time, the material of upper release guard layer and lower release guard layer is titanium dioxide
The composite material of silicon and aluminium.In another embodiment of the invention, when the first sacrificial layer material and the second sacrificial layer material are equal
For silica when, gaseous hydrogen fluoride can be used as release gas, by whole the first sacrificial layer material and the second sacrifice layer
Material removes, and at this time, the material of upper release guard layer and lower release guard layer is silicon nitride or silicon etc..In the another of the present invention
In embodiment, when the first sacrificial layer material and the second sacrificial layer material are organic matter, such as photoresist, polyimides can
With using O2As release gas, whole the first sacrificial layer material and the second sacrificial layer material are removed, at this time, upper release is protected
The material of sheath and lower release guard layer is all inorganic materials.
In conclusion mixing imaging detector pixel structure of the present invention and preparation method thereof, it will be seen that light-sensitive area
With infrared induction regional ensemble in the chips, the wafer below infrared induction component and above visible photoinduced part part is passed through
Surface forms infrared anti-reflection material, along with the wafer filtering to visible ray in itself, can improve infrared light and enter micro-bridge structure
Ratio, and then improve the image quality of infrared induction part, and make to be mixed into as micromation, chip outside visible red
It is possibly realized.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrate only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (9)
1. one kind mixing imaging detector pixel structure, it is characterised in that including：
One wafer, as visible ray filter layer；
Infrared induction region above the wafer with lower surface and visible light-sensitive area respectively；And
Electric signal for the visible light-sensitive area and the infrared induction region to be exported is calculated and is converted to
The converting unit of image；Wherein,
It can be seen that light-sensitive area, positioned at the wafer lower surface, it includes visible photoinduced part part and by the visible photoinduction
The extraction pole for the electric signal output that component is formed；
Interconnection layer, positioned at the wafer upper surface；
Dielectric layer, positioned at the upper surface of the interconnection layer；
Groove, in the interconnection layer and the dielectric layer, and corresponding to the visible photoinduced part part top；
Infrared anti-reflection material, is filled in the groove, has round and smooth convex surfaces, for strengthening the saturating of incident infrared light
The property the crossed infrared light incident with convergence；
Contact trench structure, in the dielectric layer of the infrared anti-reflection material both sides；
Infrared induction region, positioned at the infrared anti-reflection material and the contact trench superstructure, it includes infrared induction knot
Structure；The infrared induction structure includes：Lower release guard layer, infrared induction component, electrode layer and upper release guard layer；It is described red
Outer sensing component corresponds to the top of the infrared anti-reflection material, for absorbing infrared light, and produces electric signal；The infrared sense
Answering the edge of structure has the first supported hole, and the first supported hole bottom is located at the contact trench structure upper surface, and
The electrode layer of the first supported hole bottom is connected with the contact trench structure, for the infrared induction component to be produced
Raw electric signal output；The top of the infrared induction structure has the first release aperture；The infrared induction structure with it is described red
There is the first cavity between outer antireflective material；
Support member, does not contact, the supporting part positioned at the periphery of the infrared induction structure, and with the infrared induction structure
Part edge has the second supported hole, and the second supported hole bottom is located at the dielectric layer upper surface, its top has second to release
Discharge hole；There is the second cavity, and infrared induction structure and supporting part between the support member and the infrared induction structure
There is the gap of connection between part；The whole inner surface tool of inner surface or the support member at the top of the support member
Have an infrared reflective material layer or the whole support member be infrared reflective material, the infrared reflective material for will not by
The infrared light reflection that the infrared induction component absorbs is inhaled by the infrared induction component on the infrared induction component
Receive；
Wherein, it is seen that light and infrared light are injected from the wafer lower surface, can described in part by the visible light-sensitive area
See that light is absorbed by the visible light-sensitive area；Then, filter out through the wafer and do not absorbed by the visible light-sensitive area
Visible ray, infrared light incides after the infrared anti-reflection material on the infrared induction component and by the infrared induction portion
Part, which absorbs and produces electric signal, is transported to the converting unit, so as to generate the outer mixed image of visible red.
2. mixing imaging detector pixel structure according to claim 1, it is characterised in that the infrared anti-reflection material
Structure is pellicle mirror structure.
3. mixing imaging detector pixel structure according to claim 1, it is characterised in that the infrared anti-reflection material is
Silicon, germanium silicon or selenium sulfide.
4. mixing imaging detector pixel structure according to claim 1, it is characterised in that the infrared anti-reflection material
Top is with dielectric layer top flush or below at the top of the dielectric layer.
5. the preparation method of the mixing imaging detector pixel structure described in a kind of claim 1, it is characterised in that including following
Step：
Step 01：One wafer is provided, the visible light-sensitive area is formed in the wafer lower surface；
Step 02：The interconnection layer is formed in the wafer upper surface；
Step 03：The dielectric layer is formed on the interconnection layer, is etched in the dielectric layer and the interconnection layer described
Groove, forms the infrared anti-reflection material with the round and smooth convex surfaces in the groove；
Step 04：The contact trench structure is formed in the dielectric layer of the infrared anti-reflection material both sides；
Step 05：The first sacrifice layer is formed on the contact trench structure, the dielectric layer and the infrared anti-reflection material；
Step 06：First groove is formed in first sacrifice layer corresponding to the contact trench superstructure；Described
One channel bottom exposes the surface of the contact trench structure；
Step 07：The infrared induction structure is formed on first sacrifice layer with the first groove, then in institute
State infrared induction structural top and form the first release aperture；Wherein, the electrode layer of the first supported hole bottom connects with described
Tactile groove structure is connected；
Step 08：The second sacrifice layer is formed on the wafer for completing the step 07；
Step 09：Formed in second sacrifice layer above the dielectric layer on the outside of corresponding to the contact trench structure
Second groove；The second groove bottom-exposed goes out the surface of the dielectric layer；
Step 10：The support member is formed on second sacrifice layer with the second groove, in the supporting part
The second release aperture is formed at the top of part；
Step 11：Released by the gap of the connection between the support member and the infrared induction structure, described first
Discharge hole and second release aperture carry out release process, and first sacrifice layer and second sacrifice layer are discharged, so that
Form first cavity and second cavity.
6. preparation method according to claim 5, it is characterised in that the structure of the infrared anti-reflection material is pellicle mirror knot
Structure；The formation of the infrared anti-reflection material of the pellicle mirror structure includes：First, using CVD or spin coating proceeding described recessed
The infrared anti-reflection material is filled in groove, and planarizes the top of the infrared anti-reflection material；Then, the graphical infrared increasing
Saturating material simultaneously only retains the infrared anti-reflection material in the groove；Then, by high-temperature process, obtained after cooling described
Pellicle mirror structure.
7. preparation method according to claim 6, it is characterised in that the high-temperature process is laser annealing technique.
8. preparation method according to claim 5, it is characterised in that the structure of the infrared anti-reflection material is pellicle mirror knot
Structure；The formation of the infrared anti-reflection material of the pellicle mirror structure includes：First, filled out by CVD or spin coating proceeding described
The infrared anti-reflection material is filled in groove, and planarizes the top of the infrared anti-reflection material；Then, it is graphical described infrared
Antireflective material simultaneously only retains the infrared anti-reflection material in the groove；Then, grayscale photolithography plate figure, i.e., described light are utilized
Mechanical figure iuuminting is gradually reduced around by center, to be formed with semi-transparent specular photoetching offset plate figure, then, through carving
Etching technique forms the pellicle mirror structure.
9. preparation method according to claim 5, it is characterised in that in the step 10, forming the supporting part
Before part, further include：Form infrared reflective material on second sacrifice layer with the second groove, or with
The infrared reflective material is formed on the top of second sacrifice layer of the second groove.
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| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| CN101738658A (en) * | 2008-11-20 | 2010-06-16 | 采钰科技股份有限公司 | Optical element and manufacture method thereof, and image pick-up device |
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