CN105185802B - Imaging detector pixel structure and preparation method are mixed outside single-chip visible red - Google Patents
Imaging detector pixel structure and preparation method are mixed outside single-chip visible red Download PDFInfo
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- CN105185802B CN105185802B CN201510546636.0A CN201510546636A CN105185802B CN 105185802 B CN105185802 B CN 105185802B CN 201510546636 A CN201510546636 A CN 201510546636A CN 105185802 B CN105185802 B CN 105185802B
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Abstract
The present invention provides mixing imaging detector pixel structure and preparation method thereof outside a kind of single-chip visible red, including：Interconnection layer positioned at semi-conductive substrate upper surface；Infrared induction part on interconnection layer；The visible ray induction part of exterior domain positioned at interconnection layer upper surface and in infrared induction part；Or there is deep trench in the interconnection layer of the exterior domain of infrared induction beneath portions, it is seen that photoinduction part is located in Semiconductor substrate and is exposed to zanjon trench bottom, and converting unit；Infrared induction part includes：Dielectric layer and contact trench structure positioned at interconnection layer upper surface；Top has the first cavity with the infrared induction structure of the first release aperture and edge with the first supported hole between infrared induction structure and dielectric layer upper surface；There is the second supported hole support member positioned at infrared induction structure peripheral, its top has the first release aperture, has the second cavity between support member and infrared induction structure；Infrared anti-reflection material, is covered in support member surfaces；And second extraction pole.
Description
Technical field
The present invention relates to microelectronics technology, and in particular to a kind of visible ray on the same surface for being integrated in same chip
Infrared mixing imaging detector pixel structure and preparation method thereof.
Background technology
With industry and the development of living standard, simple infrared imaging or simple visual light imaging have been unable to meet
Demand, there is more broadband imaging technique increasingly to attract attention, particularly can be at the same time to visible ray and infrared photaesthesia
Imaging technique.
However, in existing mixing image device, using two light paths of lens forming come respectively to visible ray and infrared light
Carry out induction image forming, be finally synthesized together using computer processing system, by the separation of light path cause to be formed it is infrared
Image section and visible images part produce larger deviation of the alignment, seriously affect image quality.
Due to microelectromechanical systems (MEMS) technology have it is small, intelligent, executable, can integrate, processing compatibility is good,
The plurality of advantages such as cost is low, if can be combined hybrid imaging technology with microelectric technique, work out microelectronics technology
Hybrid imaging technology, the deviation of the alignment that can avoid the problem that existing infrared image and visible images is big.
The content of the invention
In order to overcome problem above, the present invention is intended to provide mixing imaging detector pixel outside a kind of single-chip visible red
Structure and preparation method thereof, so that by hybrid imaging technology micromation and chip, improves the quality for being mixed into picture.
To achieve these goals, the present invention provides imaging detector pixel knot is mixed outside a kind of single-chip visible red
Structure, including：Image device is mixed outside visible red, including：
Interconnection layer, positioned at semi-conductive substrate upper surface；
Infrared induction part, on the interconnection layer；
Visible ray induction part, positioned at the interconnection layer upper surface and in the exterior domain of the infrared induction part；Or
There is deep trench, the visible ray induction part is located at institute in the interconnection layer of the exterior domain of the infrared induction beneath portions
State in Semiconductor substrate and be exposed to the zanjon trench bottom；And
Converting unit, the electric signal for the visible ray induction part and the infrared induction part to be exported carry out
Calculate and be converted to image；Wherein,
Visible ray induction part includes：It can be seen that photoinduced part part and the electric signal for being formed the visible photoinduced part part
First extraction pole of output；
Infrared induction part includes：
Dielectric layer, positioned at the interconnection layer upper surface；There is contact trench structure in the dielectric layer；
Infrared induction structure, for absorbing infrared light, and produces electric signal；The top of the infrared induction structure has the
One release aperture, its edge have the first supported hole, and the bottom of first supported hole is contacted with the contact trench structural top,
There is the first cavity between the infrared induction structure and the dielectric layer upper surface；
Support member, does not contact, the branch positioned at the periphery of the infrared induction structure, and with the infrared induction structure
Support edge-of-part has the second supported hole, and the second supported hole bottom is connected with the dielectric layer, at the top of the support member
With the second release aperture；There is the second cavity, and the infrared sense between the support member and the infrared induction structure
Answer the gap for having between structure and the support member and connecting；
Infrared anti-reflection material, in the support member, for improving transmission of the infrared light by the support member
Rate；
There is the second extraction pole, one end of second extraction pole and the contact trench structure phase in the interconnection layer
Even, the other end is connected in the interconnection layer, for the electric signal output for being formed the infrared induction structure；The conversion
Unit is connected with first extraction pole and second extraction pole.
Preferably, the infrared induction structure is the microbridge that edge has the first supported hole and top is concavo-convex contoured surface
Structure, it includes：Lower release guard layer, upper release guard layer and positioned at the lower release guard layer and it is described it is upper release protect
Infrared-sensitive material layer, electrode layer between sheath；The upper release guard layer will be described infrared with the lower release guard layer
The part that sensitive material and the electrode layer are exposed covers.
Preferably, the electrode layer is connected with the contact trench structure, for by the infrared induction sensitive material
The electric signal output that layer is formed.
Preferably, the infrared anti-reflection material is covered in the top surface of the support member or is covered in the supporting part
The whole outer surface of part.
Preferably, the material of the support member is silica, silicon oxynitride, silicon nitride, carborundum, or non-chemical meter
Amount is than silica, silicon oxynitride, silicon nitride, carborundum.
Preferably, the infrared anti-reflection material is germanium.
Preferably, the Semiconductor substrate is silicon substrate.
Preferably, first extraction pole and second extraction pole include contact hole and lead.
To achieve these goals, present invention also offers mix imaging detection outside a kind of above-mentioned single-chip visible red
The preparation method of device pixel structure, the visible ray induction part are located at the interconnection layer upper surface and in the infrared induction portions
/ exterior domain；The preparation method comprises the following steps：
Step 01：Semi-conductive substrate is provided, surface forms the interconnection layer on the semiconductor substrate, right respectively
Described is formed in visible ray induction part region described in Ying Yu and the interconnection layer below the infrared induction subregion
One extraction pole and second extraction pole；
Step 02：The visible photoinduced part is formed in the interconnection layer upper surface corresponding to first extraction pole
Part；
Step 03：The interconnection layer corresponding to second extraction pole outside the region of the visible ray induction part
Upper surface forms the contact trench structure, is formed between the contact trench structure and on the outside of the contact trench structure
The dielectric layer；
Step 04：The first sacrifice layer is formed in the contact trench structure and the dielectric layer；
Step 05：First groove is formed in first sacrifice layer, the first groove bottom-exposed goes out the contact
At the top of groove structure；
Step 06：Form the infrared induction structure on first sacrifice layer with the first groove, and
The infrared induction structural top forms the first release aperture；The infrared induction structure of the first supported hole bottom and exposure
The contact trench structure be connected；
Step 07：In the part on the surface of the infrared induction structure and exposure, first sacrificial layer surface forms second
Sacrifice layer；
Step 08：Second groove is formed in second sacrifice layer, the second groove bottom-exposed goes out the contact
At the top of the dielectric layer on the outside of groove structure；
Step 09：The support member is formed on second sacrifice layer with the second groove, and described
The second release aperture is formed at the top of support member；
Step 10：Pass through the gap of the connection between the support member and the infrared induction structure, described
One release aperture and second release aperture carry out release process, and first sacrifice layer and second sacrifice layer are discharged,
So as to form first cavity and second cavity；
Step 11：The infrared anti-reflection material is formed in the support member.
To achieve these goals, present invention also offers the preparation that image device is mixed outside a kind of above-mentioned visible red
Method, has deep trench, the visible ray induction part in the interconnection layer of the exterior domain of the infrared induction beneath portions
In the Semiconductor substrate and it is exposed to the zanjon trench bottom；The preparation method comprises the following steps：
Step 01：Semi-conductive substrate is provided, surface forms the visible photoinduced part part on the semiconductor substrate；
Step 02：Surface forms the interconnection layer on the semiconductor substrate, corresponding to the visible photoinduced part
First extraction pole is formed in the interconnection layer of the overlying regions both sides of part, and in the area of the visible ray induction part
Second extraction pole is formed in the interconnection layer outside domain；
Step 03：Deep trench is etched in the interconnection layer above corresponding to the visible photoinduced part part, with sudden and violent
Expose the visible photoinduced part part；
Step 04：The interconnection corresponding to second extraction pole outside the region of the visible ray induction part
Layer upper surface forms the contact trench structure, shape between the contact trench structure and on the outside of the contact trench structure
Into the dielectric layer；
Step 05：The first sacrifice layer is formed in the contact trench structure and the dielectric layer；
Step 06：First groove is formed in first sacrifice layer, the first groove bottom-exposed goes out the contact
At the top of groove structure；
Step 07：The infrared induction structure is formed on first sacrifice layer with the first groove, in institute
State infrared induction structural top and form first release aperture；The infrared induction structure positioned at the first supported hole bottom
It is connected with the exposed contact trench structure；
Step 08：In the part on the surface of the infrared induction structure and exposure, first sacrificial layer surface forms second
Sacrifice layer；
Step 09：Second groove is formed in second sacrifice layer, the second groove bottom-exposed goes out the contact
At the top of the dielectric layer on the outside of groove structure；
Step 10：The support member is formed on second sacrifice layer with the second groove, in the branch
Support component top forms second release aperture；
Step 11：Pass through the gap of the connection between the support member and the infrared induction structure, described
One release aperture and second release aperture carry out release process, and first sacrifice layer and second sacrifice layer are discharged,
So as to form first cavity and second cavity；
Step 12：The infrared anti-reflection material is formed in the support member.
Imaging detector pixel structure and preparation method thereof is mixed outside the single-chip visible red of the present invention, it will be seen that light sensation
It should be partly partially integrated in infrared induction in same semi-conductive substrate, not only increase the quality that picture is mixed into outside visible red
Also make it possible to be mixed into as micromation, chip outside visible red.
Brief description of the drawings
Fig. 1 is that imaging detector pixel structure is mixed outside the single-chip visible red of the preferred embodiment of the present invention
Cross section structure schematic diagram
Fig. 2 is that imaging detector pixel structure is mixed outside the single-chip visible red of the preferred embodiment of the present invention
Cross section structure schematic diagram
Fig. 3 is that imaging detector pixel structure is mixed outside the single-chip visible red of the preferred embodiment of the present invention
The flow diagram of production method
Fig. 4 is that imaging detector pixel structure is mixed outside the single-chip visible red of the preferred embodiment of the present invention
The flow diagram of production method
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Imaging detector pixel structure is mixed outside the single-chip visible red of the present invention, including：Positioned at semi-conductive substrate
The interconnection layer of upper surface；Infrared induction part on interconnection layer；Positioned at interconnection layer upper surface and infrared induction part it
The visible ray induction part of exterior domain；Or there is deep trench in the interconnection layer of the exterior domain of infrared induction beneath portions, it is seen that
Photoinduction part is located in Semiconductor substrate and is exposed to zanjon trench bottom；And for will be seen that photoinduction part and infrared sense
The electric signal that should be partly exported is calculated and is converted to the converting unit of image；Wherein, it is seen that photoinduced part point includes：Can
See photoinduction component and it will be seen that the first extraction pole of the electric signal output that photoinduction component is formed；First extraction pole and interconnection
Layer is connected；Infrared induction part includes：Dielectric layer positioned at interconnection layer upper surface；There is contact trench structure in dielectric layer；It is red
Outer induction structure, for absorbing infrared light, and produces electric signal；The edge of infrared induction structure has the first supported hole, and first
Supported hole bottom and contact trench form touch, infrared induction structural top have the first release aperture；Infrared induction structure is with being situated between
There is the first cavity between matter layer upper surface；Support member, positioned at the periphery of infrared induction structure, and with infrared induction structure not
Contact, support member edge has the second supported hole, and the second supported hole bottom is connected with dielectric layer, and support member top is with the
Two release apertures；There is the second cavity, and infrared induction structure and support member between support member and infrared induction decoupling stock
Between have connection gap；Infrared anti-reflection material, in support member, passes through the saturating of support member for improving infrared light
Cross rate；There is the second extraction pole in the interconnection layer, one end of the second extraction pole is connected with contact trench structure, and the other end is connected to
In interconnection layer, for the electric signal output for being formed infrared induction structure；Converting unit is drawn with the first extraction pole and second
Extremely it is connected.
It should be noted that in the present invention, can also have other devices, these devices and interconnection layer in Semiconductor substrate
It is connected.
First cavity increases the distance between infrared induction structure and wafer, plays infrared induction structure and wafer and Jie
Effect is thermally isolated between matter layer；Second cavity is resonator, and the infrared light for will be absorbed without infrared induction structure carries out
It is repeated multiple times to reflex in infrared induction structure, so as to fulfill fully absorbing to incident infrared light.
It should also be noted that, the infrared induction part and visible ray induction part of the present invention can be considered as two kinds of pixels,
Infrared induction part pixel and visible ray induction part pixel can be staggered, can also an infrared induction part pixel week
Enclose arrangement multiple visible ray induction parts pixel.
Below in conjunction with attached drawing 1-2 and specific embodiment to mixing imaging detector picture outside the single-chip visible red of the present invention
Meta structure is described in further detail.It should be noted that attached drawing is using very simplified form, using non-accurate ratio,
And only achieve the purpose that to aid in illustrating the present embodiment to convenience, clearly.
Referring to Fig. 1, imaging detector pixel structure is mixed outside the single-chip visible red of one embodiment of the present of invention,
Including：
Interconnection layer 101, positioned at 100 upper surface of semi-conductive substrate；Here Semiconductor substrate 100 can be, but not limited to for
Silicon substrate；
Infrared induction part IR, on interconnection layer 101；Infrared induction part IR includes：
Dielectric layer 102, positioned at 101 upper surface of interconnection layer；
Contact trench structure 103, in dielectric layer 102；There is certain spacing between contact trench structure 103, connect
Touch and be used to form the first cavity above the spacing between groove structure 103, therefore, can be according to the infrared induction knot of actual needs
The size of structure adjusts the spacing between contact trench structure 103；
Infrared induction structure is the micro-bridge structure that edge has the first supported hole 110 and top is concavo-convex contoured surface, its
Including：Lower release guard layer 104, upper release guard layer 107 and positioned at lower release guard layer 104 and upper release guard layer 107
Between infrared-sensitive material layer 105, electrode layer 106；Upper release guard layer 107 and lower release guard layer 104 are by infrared-sensitive
The part that material layer 105 and electrode layer 106 are exposed covers.Electrode layer 106 positioned at 110 bottom of the first supported hole is with connecing
Touch groove structure 103 to be connected, for the electric signal output for being formed infrared-sensitive material layer 105.Micro-bridge structure and medium
Layer has the first cavity between 102 upper surface；There is the first release aperture K1 at the top of micro-bridge structure；
Support member 108, does not contact positioned at the periphery of micro-bridge structure, and with micro-bridge structure, and support member edge has the
Two supported holes 111,111 bottom of the second supported hole are connected with dielectric layer 102, have the second release aperture K2 at the top of support member；Branch
There is the second cavity between support part part 108 and micro-bridge structure；It should be noted that the cross section for device shown in Fig. 1
Structure diagram, has the gap connected, for example, in longitudinal section in whole device, between infrared induction structure and support member
On, the edge of infrared induction structure does not have supported hole, therefore, has between the edge and support member of infrared induction structure
The gap of connection.
Infrared anti-reflection material 113, is covered in 108 surface of support member, passes through the saturating of support member for improving infrared light
Cross rate；Here, infrared anti-reflection material 113 is covered in the top surface of support member 108, can also be by entirely in other embodiments
Support member outer surface includes the second supported hole and all covers.Infrared anti-reflection material 113 can be germanium.
Second extraction pole 109 includes contact hole and lead, and its one end of contact hole is connected with contact trench structure 103, separately
One end is connected to interconnection layer 101, for the electric signal output for being formed infrared-sensitive material layer 105.
Wherein, the material of contact trench structure can be Al or Pt；The material of dielectric layer for silica, silicon oxynitride,
The silica of silicon nitride and carborundum or non-stoichiometric, silicon oxynitride, silicon nitride and carborundum, or mixed with boron, phosphorus,
The above-mentioned material of the impurity element such as carbon or fluorine；Release guard layer can be silica (SiO2), silicon oxynitride (Si0N), silicon nitride
(SiN), the film based on components such as Si, 0, C, N such as carborundum (SiC), can also be the above-mentioned film of non-stoichiometric, such as
Oxygen-enriched or Silicon-rich silica, or the above-mentioned film mixed with elements such as B, P, C or F, such as fluorine silica glass (FSG), boron
Silica glass (BPSG) or phosphorosilicate glass (PSG) etc..Upper release guard layer and lower release guard layer are by infrared-sensitive material layer and electricity
Pole layer surrounds, when carrying out release process, to play the role of effectively protecting infrared-sensitive material layer and electrode layer, while
Isolate the pollution and damage in the external world during manufacturing process and use, improve the reliability of infrared-sensitive material layer, can also keep away
Exempt from the short circuit of electrode layer.Infrared-sensitive material layer is non-crystalline silicon or vanadium oxide etc..The material of electrode layer can be titanium, tantalum, up and down
The titanium nitride and titanium of stacking or tantalum and tantalum nitride stacked on top of one another.
Visible ray induction part VS, positioned at 101 upper surface of interconnection layer and in the exterior domain of infrared induction part IR；Visible ray
Induction part VS includes：Thus it is clear that photoinduced part part 114 and it will be seen that photoinduction component 114 formed the first of electric signal output
Extraction pole 112, the first extraction pole 11 include contact hole and lead；It can be seen that photoinduced part part 114 can be opto-electronic conversion diode；
It should be noted that visible 114 bottom of photoinduced part part has dielectric material, for isolate visible photoinduced part part 114 with mutually
Even layer 101；And
Converting unit, is connected with the first extraction pole 112 and the second extraction pole 109, for will be seen that photoinduction part and red
The electric signal that outer induction part is exported is calculated and is converted to image.
Referring to Fig. 2, imaging detector pixel knot is mixed outside the single-chip visible red of an alternative embodiment of the invention
Structure, including：
Interconnection layer 201, positioned at 200 upper surface of semi-conductive substrate；Here Semiconductor substrate 200 can be, but not limited to for
Silicon substrate；
Infrared induction part IR, positioned at 201 upper surface of interconnection layer；Infrared induction part IR includes：
Contact trench structure 203, in dielectric layer 202；There is certain spacing between contact trench structure 203, connect
Touch and be used to form the first cavity above the spacing between groove structure 203, therefore, can be according to the infrared induction knot of actual needs
The size of structure adjusts the spacing between contact trench structure 203；
Infrared induction structure is the micro-bridge structure that both ends have the first supported hole 210 and top is concavo-convex contoured surface, its
Including：Lower release guard layer 204, upper release guard layer 207 and positioned at lower release guard layer 204 and upper release guard layer 207
Between infrared-sensitive material layer 205, electrode layer 206；Upper release guard layer 207 and lower release guard layer 204 are by infrared-sensitive
The part that material layer 205 and electrode layer 206 are exposed covers.Electrode layer 205 is connected with contact trench structure 203, uses
In the electric signal output for being formed infrared-sensitive material layer 205.Have first between 202 upper surface of micro-bridge structure and dielectric layer
Cavity；There is the first release aperture K ' 1 at the top of micro-bridge structure；
Support member 208, does not contact positioned at the periphery of micro-bridge structure, and with micro-bridge structure, and 208 edge of support member has
Second supported hole 211,211 bottom of the second supported hole are connected with dielectric layer 202, and the top of support member 208 has the second release aperture
K’2；There is the second cavity between support member 208 and micro-bridge structure；It should be noted that shown in Fig. 2 for the one of device
Cross-sectional structure schematic diagram, has the gap connected in whole device, between infrared induction structure and support member, for example,
On longitudinal section, the edge of infrared induction structure does not have supported hole, therefore, the edge of infrared induction structure and support member it
Between have connection gap.
Infrared anti-reflection material 213, is covered in 208 surface of support member, passes through support member 208 for improving infrared light
Transmitance；Here, infrared anti-reflection material 213 all covers the whole outer surface of support member 208 including the second supported hole 211
Lid.Infrared anti-reflection material 213 can be germanium.
Second extraction pole 209 includes contact hole and lead, and one end of contact hole is connected with contact trench structure 203, another
End is connected in interconnection layer 202, for the electric signal output for being formed infrared-sensitive material layer 205.
Wherein, the material of contact trench structure can be Al, Pt；The material of dielectric layer is silica, silicon oxynitride, nitrogen
The silica of SiClx and carborundum or non-stoichiometric, silicon oxynitride, silicon nitride and carborundum, or mixed with boron, phosphorus, carbon
Or the above-mentioned material of the impurity element such as fluorine；Release guard layer can be silica (SiO2), silicon oxynitride (Si0N), silicon nitride
(SiN), the film based on components such as Si, 0, C, N such as carborundum (SiC), can also be the above-mentioned film of non-stoichiometric, such as
Oxygen-enriched or Silicon-rich silica, or the above-mentioned film mixed with elements such as B, P, C or F, such as fluorine silica glass (FSG), boron
Silica glass (BPSG) or phosphorosilicate glass (PSG) etc..Upper release guard layer and lower release guard layer are by infrared-sensitive material layer and electricity
Pole layer surrounds, when carrying out release process, to play the role of effectively protecting infrared-sensitive material layer and electrode layer, while
Isolate the pollution and damage in the external world during manufacturing process and use, improve the reliability of infrared-sensitive material layer, can also keep away
Exempt from the short circuit of electrode.Infrared-sensitive material layer is non-crystalline silicon or vanadium oxide etc..The material of electrode layer can be titanium, tantalum, levels
Folded titanium nitride and titanium or tantalum and tantalum nitride stacked on top of one another.
Visible ray induction part VS includes：It can be seen that photoinduced part part 214 and it will be seen that the electricity that photoinduction component 214 is formed
First extraction pole 212 of signal output, the first extraction pole 212 include contact hole and lead；It can be seen that photoinduced part part 214 can be
Opto-electronic conversion diode；Here, there is deep trench 215 in the interconnection layer 201 of the exterior domain of infrared induction part IR lower sections, it is seen that
Photoinduction part VS is located in Semiconductor substrate 200 and is exposed to 215 bottom of deep trench；It should be noted that visible photoinduction
214 bottom of component has dielectric material, for isolating visible photoinduced part part 214 and interconnection layer 201；And
Converting unit, is connected with the first extraction pole 212 and the second extraction pole 209, for will be seen that photoinduction part VS and
The electric signal that infrared induction part IR is exported is calculated and is converted to image.
Below in conjunction with attached drawing 3-4 and specific embodiment to mixing imaging detector picture outside the single-chip visible red of the present invention
The preparation method of meta structure is described in further detail.It should be noted that attached drawing uses very simplified form, uses non-essence
Accurate ratio, and only achieve the purpose that to aid in illustrating the present embodiment to convenience, clearly.
Referring to Fig. 3, in one embodiment of the present of invention, imaging detector picture is mixed outside above-mentioned single-chip visible red
In device prepared by the preparation method of meta structure, it is seen that photoinduction part is located at interconnection layer upper surface and in infrared induction part
Exterior domain；The preparation method comprises the following steps：
Step 101：Semi-conductive substrate is provided, surface forms interconnection layer on a semiconductor substrate, correspond respectively to can
The first extraction pole and the second extraction pole are formed in the interconnection layer seen below photoinduced part subregion and infrared induction subregion；
Specifically, interconnection layer, the first extraction pole and the second extraction pole can be formed using existing interconnection process.First
It is connected at the top of extraction pole with follow-up visible photoinduced part part, the contact with follow-up infrared induction part at the top of the second extraction pole
Groove structure is connected.
Step 102：Visible photoinduced part part is formed in the interconnection layer upper surface corresponding to the first extraction pole；
Specifically, visible photoinduced part part is opto-electronic conversion diode, its preparation method can use existing process.
Step 103：The interconnection layer upper surface shape corresponding to the second extraction pole outside the region of visible ray induction part
Into contact trench structure, dielectric layer is formed between contact trench structure and on the outside of contact trench structure；
Specifically, one layer of metal layer, Ran Houjing can first be deposited in interconnection layer upper surface using physical gas-phase deposition
Photoetching and etching technics, etch groove in the metal layer, form metal pattern, that is to say contact trench structure；Then, in gold
Metallization medium layer on metal patterns, wherein, dielectric layer is filled between contact trench structure, and this set can prevent contact trench
Short circuit occurs between structure.Contact trench body structure surface can be deposited to during due to cvd dielectric layer, therefore, it is necessary to chemical machinery to grind
Mill is identical with the thickness of contact trench structure by planarization dielectric layer, the thickness of finally formed dielectric layer.
Step 104：The first sacrifice layer is formed in contact trench structure and dielectric layer；
Specifically, the first sacrifice layer can be formed using chemical vapor deposition method or coating；
Step 105：First groove is formed in the first sacrifice layer, first groove bottom-exposed goes out contact trench structure top
Portion；
Specifically, can be, but not limited to form first groove using photoetching and etching technics, first groove is used to be formed
The first follow-up supported hole.
Step 106：Infrared induction structure is formed on the first sacrifice layer with first groove, and in infrared induction structure
First release aperture is formed on top；The infrared induction structure of first supported hole bottom is connected with the contact trench structure of exposure；
Specifically, infrared induction structure has at the top of concavo-convex rise and fall and microbridge knot of the both ends with supported hole to be above-mentioned
Structure；It includes：Lower release guard layer, upper release guard layer and between lower release guard layer and upper release guard layer
Infrared-sensitive material layer, electrode layer；Upper release guard layer is sudden and violent by infrared-sensitive material layer and electrode layer institute with lower release guard layer
The part of dew covers.Electrode layer positioned at the first supported hole bottom is connected with contact trench structural top, for will be red
The electric signal output that outer sensitive material produces.
Step 107：The second sacrifice layer is formed in the first sacrificial layer surface of part of the surface of infrared induction structure and exposure；
Specifically, the formation of the second sacrifice layer can be, but not limited to using coating or other chemical vapor deposition methods.The
The material identical of the material of two sacrifice layers and the first sacrifice layer.
Step 108：Second groove is formed in the second sacrifice layer, second groove bottom-exposed goes out on the outside of contact trench structure
Dielectric layer at the top of；
Specifically, can be, but not limited to form second groove using photoetching and etching technics, second groove is used to be formed
The second follow-up supported hole.
Step 109：Support member is formed on the second sacrifice layer with second groove, and is formed at the top of support member
Second release aperture；
Specifically, support member can be formed using vapour deposition process.
Step 110：Released by the gap of the connection between support member and infrared induction structure, the first release aperture and second
Discharge hole carries out release process, the first sacrifice layer and the second sacrifice layer is discharged, so as to form the first cavity and the second cavity；
Specifically, when the material of the first sacrifice layer and the second sacrifice layer is non-crystalline silicon, then using XeF2As release gas
Body, the first sacrifice layer and the second sacrifice layer are removed.
Step 111：Infrared anti-reflection material is formed on the supporting member.
Specifically, utilize PVD or CVD deposition infrared anti-reflection material；It can be deposited in the top surface of support member infrared
Antireflective material, can also be in whole support member outside deposition infrared anti-reflection material；It is then also possible to utilize outstanding side technique
(overhang) vacuum structure of the first cavity and the second cavity is realized.
Referring to Fig. 4, in an alternative embodiment of the invention, imaging detector picture is mixed outside above-mentioned single-chip visible red
The preparation method of meta structure, in prepared device, has deep trench in the interconnection layer of the exterior domain of infrared induction beneath portions,
Visible ray induction part is located in Semiconductor substrate and is exposed to zanjon trench bottom；The preparation method comprises the following steps：
Step 201：Semi-conductive substrate is provided, surface forms visible photoinduced part part on a semiconductor substrate；
, can be formed using existing method specifically, visible photoinduced part part can be opto-electronic conversion diode
See photoinduction component.
Step 202：Surface forms interconnection layer on a semiconductor substrate, in the overlying regions corresponding to visible photoinduced part part
The first extraction pole is formed in the interconnection layer of both sides, and second is formed in the interconnection layer outside the region of visible ray induction part
Extraction pole；
Specifically, the forming method of interconnection layer can use existing technique, the bottom of the first extraction pole and visible light sensation
Component is answered to be connected, the top of the second extraction pole is connected with the contact trench structure in follow-up infrared induction region.
Step 203：Deep trench is etched in interconnection layer above corresponding to visible photoinduced part part, it is visible to expose
Photoinduction component；
Specifically, the formation of deep trench can be formed using photoetching and etching technics, zanjon trench bottom will be seen that light sensation
Component is answered to expose, so that absorption of the visible photoinduced part part to visible ray is not hindered be subject to interconnection layer.
Step 204：The interconnection layer upper surface shape corresponding to the second extraction pole outside the region of visible ray induction part
Into contact trench structure, dielectric layer is formed between contact trench structure and on the outside of contact trench structure；
Specifically, one layer of metal layer, Ran Houjing can first be deposited in interconnection layer upper surface using physical gas-phase deposition
Photoetching and etching technics, etch groove in the metal layer, form metal pattern, that is to say contact trench structure；Then, whole
Metallization medium layer on a substrate, its dielectric layer are filled between groove structure, and this set can prevent contact trench structure
Between occur short circuit.Contact trench body structure surface can be deposited to during due to cvd dielectric layer, will therefore, it is necessary to chemical mechanical grinding
Planarization dielectric layer, the thickness of finally formed dielectric layer are identical with the thickness of contact trench structure.
Step 205：The first sacrifice layer is formed in contact trench structure and dielectric layer；
Specifically, the first sacrifice layer can be formed using chemical vapor deposition method or coating.
Step 206：First groove is formed in the first sacrifice layer, first groove bottom-exposed goes out contact trench structure top
Portion；
Specifically, can be, but not limited to form first groove using photoetching and etching technics, first groove is used to be formed
The first follow-up supported hole.
Step 207：Infrared induction structure is formed on the first sacrifice layer with first groove, on infrared induction structure top
Portion forms the first release aperture；Infrared induction structure positioned at the first supported hole bottom is connected with the contact trench structure of exposure；
Specifically, infrared induction structure has at the top of concavo-convex rise and fall and microbridge knot of the both ends with supported hole to be above-mentioned
Structure；It includes：Lower release guard layer, upper release guard layer and between lower release guard layer and upper release guard layer
Infrared-sensitive material layer, electrode layer；Upper release guard layer is sudden and violent by infrared-sensitive material layer and electrode layer institute with lower release guard layer
The part of dew covers.Electrode layer positioned at the first supported hole bottom is connected with contact trench structural top, for will be red
The electric signal output that outer sensitive material produces.
Step 208：The second sacrifice layer is formed in the first sacrificial layer surface of part of the surface of infrared induction structure and exposure；
Specifically, the formation of the second sacrifice layer can be, but not limited to using coating or other chemical vapor deposition methods.The
The material identical of the material of two sacrifice layers and the first sacrifice layer.
Step 209：Second groove is formed in the second sacrifice layer, second groove bottom-exposed goes out on the outside of contact trench structure
Dielectric layer at the top of；
Specifically, can be, but not limited to form second groove using photoetching and etching technics, second groove is used to be formed
The second follow-up supported hole.
Step 210：Support member is formed on the second sacrifice layer with second groove, and is formed at the top of support member
Second release aperture；
Specifically, support member can be formed using vapour deposition process.
Step 211：Released by the gap of the connection between support member and infrared induction structure, the first release aperture and second
Discharge hole carries out release process, the first sacrifice layer and the second sacrifice layer is discharged, so as to form the first cavity and the second cavity；
Specifically, when the material of the first sacrifice layer and the second sacrifice layer is non-crystalline silicon, then using XeF2As release gas
Body, the first sacrifice layer and the second sacrifice layer is removed, at this time, the material of upper release guard layer and lower release guard layer is titanium dioxide
The composite material of silicon and aluminium.In another embodiment of the invention, when the first sacrificial layer material and the second sacrificial layer material are equal
For silica when, gaseous hydrogen fluoride can be used as release gas, by whole the first sacrificial layer material and the second sacrifice layer
Material removes, and at this time, the material of upper release guard layer and lower release guard layer is silicon nitride or silicon etc..In the another of the present invention
In embodiment, when the first sacrificial layer material and the second sacrificial layer material are organic matter, such as photoresist, polyimides can
With using O2As release gas, whole the first sacrificial layer material and the second sacrificial layer material are removed, at this time, upper release is protected
The material of sheath and lower release guard layer is all inorganic materials.
Step 212：Infrared anti-reflection material is formed on the supporting member.
Specifically, utilize PVD or CVD deposition infrared anti-reflection material；It can be deposited in the top surface of support member infrared
Antireflective material, can also be in whole support member outside deposition infrared anti-reflection material；It is then also possible to utilize outstanding side technique
(overhang) vacuum structure of the first cavity and the second cavity is realized.
In conclusion imaging detector picture is mixed outside the visible red on the same surface for being integrated in same chip of the present invention
Meta structure and preparation method thereof, it will be seen that photoinduction part and infrared induction are partially integrated in same semi-conductive substrate, not only
Improve and the quality of picture is mixed into outside visible red also makes it possible to be mixed into as micromation, chip outside visible red.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrate only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (10)
1. imaging detector pixel structure is mixed outside a kind of single-chip visible red, it is characterised in that including：
Interconnection layer, positioned at semi-conductive substrate upper surface；
Infrared induction part, on the interconnection layer；
Visible ray induction part, positioned at the interconnection layer upper surface and in the exterior domain of the infrared induction part；It is or described
There is deep trench, the visible ray induction part is positioned at described half in the interconnection layer of the exterior domain of infrared induction beneath portions
In conductor substrate and it is exposed to the zanjon trench bottom；And
Converting unit, the electric signal for the visible ray induction part and the infrared induction part to be exported are calculated
And be converted to image；Wherein,
Visible ray induction part includes：It can be seen that photoinduced part part and the electric signal output for being formed the visible photoinduced part part
The first extraction pole；
Infrared induction part includes：
Dielectric layer, positioned at the interconnection layer upper surface；There is contact trench structure in the dielectric layer；
Infrared induction structure, for absorbing infrared light, and produces electric signal；The top of the infrared induction structure has first to release
Discharge hole, its edge have the first supported hole, and the bottom of first supported hole is contacted with the contact trench structural top, described
There is the first cavity between infrared induction structure and the dielectric layer upper surface；
Support member, does not contact, the supporting part positioned at the periphery of the infrared induction structure, and with the infrared induction structure
Part edge has the second supported hole, and the second supported hole bottom is connected with the dielectric layer, has at the top of the support member
Second release aperture；There is the second cavity, and the infrared induction knot between the support member and the infrared induction structure
There is the gap connected between structure and the support member；
Infrared anti-reflection material, in the support member, for improving transmitance of the infrared light by the support member；
There is the second extraction pole, one end of second extraction pole is connected with the contact trench structure, separately in the interconnection layer
One end is connected in the interconnection layer, for the electric signal output for being formed the infrared induction structure；The converting unit
It is connected with first extraction pole and second extraction pole.
2. imaging detector pixel structure is mixed outside single-chip visible red according to claim 1, it is characterised in that institute
It is the micro-bridge structure that edge has the first supported hole and top is concavo-convex contoured surface to state infrared induction structure, it includes：Under release
Put protective layer, upper release guard layer and infrared quick between the lower release guard layer and the upper release guard layer
Feel material layer, electrode layer；The upper release guard layer and the lower release guard layer are by the infrared-sensitive material layer and described
The part that electrode layer is exposed covers.
3. imaging detector pixel structure is mixed outside single-chip visible red according to claim 2, it is characterised in that institute
State electrode layer with the contact trench structure to be connected, the electric signal for the infrared induction sensitive material to be formed is defeated
Go out.
4. imaging detector pixel structure is mixed outside single-chip visible red according to claim 1, it is characterised in that institute
Infrared anti-reflection material is stated to be covered in the top surface of the support member or be covered in the whole outer surface of the support member.
5. imaging detector pixel structure is mixed outside single-chip visible red according to claim 1, it is characterised in that institute
The material for stating support member is stoichiometric ratio silica, silicon oxynitride, silicon nitride, carborundum, or non-stoichiometric oxygen
SiClx, silicon oxynitride, silicon nitride, carborundum.
6. imaging detector pixel structure is mixed outside single-chip visible red according to claim 1, it is characterised in that institute
It is germanium to state infrared anti-reflection material.
7. imaging detector pixel structure is mixed outside single-chip visible red according to claim 1, it is characterised in that institute
It is silicon substrate to state Semiconductor substrate.
8. imaging detector pixel structure is mixed outside single-chip visible red according to claim 1, it is characterised in that institute
Stating the first extraction pole and second extraction pole includes contact hole and lead.
9. the preparation method of imaging detector pixel structure is mixed outside the single-chip visible red described in a kind of claim 1, its
It is characterized in that, comprises the following steps：
Step 01：Semi-conductive substrate is provided, surface forms the interconnection layer on the semiconductor substrate, is corresponding respectively to
Described first is formed in the interconnection layer below visible ray induction part region and the infrared induction subregion to draw
Go out pole and second extraction pole；
Step 02：The visible photoinduced part part is formed in the interconnection layer upper surface corresponding to first extraction pole；
Step 03：The interconnection layer upper table corresponding to second extraction pole outside the region of the visible ray induction part
Face forms the contact trench structure, between the contact trench structure and on the outside of the contact trench structure described in formation
Dielectric layer；
Step 04：The first sacrifice layer is formed in the contact trench structure and the dielectric layer；
Step 05：First groove is formed in first sacrifice layer, the first groove bottom-exposed goes out the contact trench
Structural top；
Step 06：The infrared induction structure is formed on first sacrifice layer with the first groove, and described
Infrared induction structural top forms the first release aperture；The infrared induction structure of the first supported hole bottom and the institute of exposure
Contact trench structure is stated to be connected；
Step 07：In the part on the surface of the infrared induction structure and exposure, first sacrificial layer surface forms second and sacrifices
Layer；
Step 08：Second groove is formed in second sacrifice layer, the second groove bottom-exposed goes out the contact trench
At the top of the dielectric layer on the outside of structure；
Step 09：The support member is formed on second sacrifice layer with the second groove, and in the support
Component top forms the second release aperture；
Step 10：Released by the gap of the connection between the support member and the infrared induction structure, described first
Discharge hole and second release aperture carry out release process, and first sacrifice layer and second sacrifice layer are discharged, so that
Form first cavity and second cavity；
Step 11：The infrared anti-reflection material is formed in the support member.
10. the preparation method of imaging detector pixel structure, institute are mixed outside the single-chip visible red described in a kind of claim 1
Stating has deep trench in the interconnection layer of the exterior domain of infrared induction beneath portions, the visible ray induction part is positioned at described
In Semiconductor substrate and it is exposed to the zanjon trench bottom；It is characterized in that, the preparation method comprises the following steps：
Step 01：Semi-conductive substrate is provided, surface forms the visible photoinduced part part on the semiconductor substrate；
Step 02：Surface forms the interconnection layer on the semiconductor substrate, corresponding to the visible photoinduced part part
Form first extraction pole in the interconnection layer of overlying regions both sides, and the region of the visible ray induction part it
Second extraction pole is formed in the outer interconnection layer；
Step 03：Deep trench is etched in the interconnection layer above corresponding to the visible photoinduced part part, to expose
The visible photoinduced part part；
Step 04：On the interconnection layer corresponding to second extraction pole outside the region of the visible ray induction part
Surface forms the contact trench structure, and institute is formed between the contact trench structure and on the outside of the contact trench structure
State dielectric layer；
Step 05：The first sacrifice layer is formed in the contact trench structure and the dielectric layer；
Step 06：First groove is formed in first sacrifice layer, the first groove bottom-exposed goes out the contact trench
Structural top；
Step 07：The infrared induction structure is formed on first sacrifice layer with the first groove, described red
Outer sensing structural top forms first release aperture；Positioned at the first supported hole bottom the infrared induction structure with it is sudden and violent
The contact trench structure of dew is connected；
Step 08：In the part on the surface of the infrared induction structure and exposure, first sacrificial layer surface forms second and sacrifices
Layer；
Step 09：Second groove is formed in second sacrifice layer, the second groove bottom-exposed goes out the contact trench
At the top of the dielectric layer on the outside of structure；
Step 10：The support member is formed on second sacrifice layer with the second groove, in the supporting part
Second release aperture is formed at the top of part；
Step 11：Released by the gap of the connection between the support member and the infrared induction structure, described first
Discharge hole and second release aperture carry out release process, and first sacrifice layer and second sacrifice layer are discharged, so that
Form first cavity and second cavity；
Step 12：The infrared anti-reflection material is formed in the support member.
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| CN106276781B (en) * | 2016-09-06 | 2017-10-17 | 烟台睿创微纳技术股份有限公司 | A kind of micro-metering bolometer refers to the preparation method and structure of pixel |
| CN108538954A (en) * | 2018-05-24 | 2018-09-14 | 南方科技大学 | A kind of pyroelectric electric device and its manufacturing method |
| CN109911840A (en) * | 2019-02-28 | 2019-06-21 | 上海集成电路研发中心有限公司 | A kind of MEMS infrared detector structure |
| CN111003684B (en) * | 2019-03-02 | 2023-06-23 | 天津大学 | The release hole is positioned in the packaging space encapsulation of MEMS devices within |
| CN110571232A (en) * | 2019-08-23 | 2019-12-13 | 电子科技大学 | Infrared and visible light dual-band sensor pixel and array |
| CN111129049B (en) * | 2019-11-29 | 2023-06-02 | 上海集成电路研发中心有限公司 | Image sensor structure and forming method |
| CN111601051B (en) * | 2020-05-13 | 2021-07-16 | 长江存储科技有限责任公司 | Alignment image acquisition method, device and system |
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