CN109911840A - A kind of MEMS infrared detector structure - Google Patents
A kind of MEMS infrared detector structure Download PDFInfo
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- CN109911840A CN109911840A CN201910148520.XA CN201910148520A CN109911840A CN 109911840 A CN109911840 A CN 109911840A CN 201910148520 A CN201910148520 A CN 201910148520A CN 109911840 A CN109911840 A CN 109911840A
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- mim capacitor
- metal interconnecting
- infrared detector
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Abstract
The invention discloses a kind of MEMS infrared detector structures, comprising: the multiple layer metal interconnection layer on substrate and the infrared microbridge detecting structure on the multiple layer metal interconnection layer；Wherein, the at least side of at least one layer of metal interconnecting layer is equipped with one layer of first MIM capacitor layer, the combination between the metal interconnecting layer of pole plate layer is also served as using the two pole plate layers and respective side of the first MIM capacitor layer of every side, forms two the first MIM capacitors in parallel；It is all connected in parallel by first MIM capacitor that each layer is in parallel, forms the plural parallel stage structure of first MIM capacitor in the metal interconnecting layer described in multilayer.The present invention can significantly promote the numerical value of the unit-area capacitance of MEMS infrared detector, and cost and improving performance therefore can be greatly lowered.
Description
Technical field
The present invention relates to infrared detector technical fields, have multiple MIM capacitor cascade structures more particularly, to one kind
Optimization MEMS infrared detector.
Background technique
Conventional CMOS circuit is capable of providing the capacitance structures such as MIM, MOS.Wherein, MIM capacitor is since it is in electric leakage, CV characteristic
Etc. the unique advantage that has, receive and be widely used.
But for the product in the field the MEMS such as infrared detector, the capacitance of mim capacitor structure unit area is still
It is too small, cause capacity area to occupy excessive, to influence chip area and its cost and performance.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of MEMS infrared detector knot is provided
Structure.
To achieve the above object, technical scheme is as follows:
A kind of MEMS infrared detector structure, comprising:
Multiple layer metal interconnection layer on substrate and the infrared microbridge detection on the multiple layer metal interconnection layer
Structure；Wherein,
At least side of at least one layer of metal interconnecting layer is equipped with one layer of first MIM capacitor layer, using described in every side
The two pole plate layers and respective side of first MIM capacitor layer also serve as the combination between the metal interconnecting layer of pole plate layer, are formed
Two the first MIM capacitors in parallel；It is all connected in parallel by first MIM capacitor that each layer is in parallel, in multilayer
The plural parallel stage structure of first MIM capacitor is formed in the metal interconnecting layer.
Further, it is connected in parallel between each first MIM capacitor by first through hole realization.
Further, it is carried out between the infrared microbridge detecting structure and the multiple layer metal interconnection layer by the second through-hole
Connection.
Further, same layer is equipped with PAD structure in top layer's metal interconnecting layer of the multiple layer metal interconnection layer, and described the
Two through-holes connect the PAD structure, and the PAD structure connects top layer's metal interconnecting layer of the multiple layer metal interconnection layer.
Further, the multiple layer metal interconnection layer is set in the first interlayer dielectric layer.
Further, the second inter-level dielectric is equipped between the infrared microbridge detecting structure and the multiple layer metal interconnection layer
Layer.
Further, it is equipped with one layer of second MIM capacitor layer in second interlayer dielectric layer, and forms one the 2nd MIM electricity
Hold, second MIM capacitor connects top layer's metal interconnecting layer of the multiple layer metal interconnection layer by third through-hole, and with institute
State MIM capacitor multistage that the first MIM capacitor is formed together in second interlayer dielectric layer and the metal interconnecting layer simultaneously
It is coupled structure.
Further, electrode layer, the electrode layer and second MIM capacitor are additionally provided in second interlayer dielectric layer
Layer same layer setting, the infrared microbridge detecting structure connect second through-hole by the electrode layer.
Further, second interlayer dielectric layer is equipped with reflecting layer, the reflecting layer and the second MIM capacitor layer
It is isolated setting.
It can be seen from the above technical proposal that the present invention makes full use of the bedding void in metal interconnecting layer to add MIM electricity
Hold layer, two pole plate layers of MIM capacitor layer are combined to form two MIM capacitors in parallel with metal interconnecting layer；Also, it can be with
MIM capacitor layer is added using the gap between metal interconnecting layer and infrared microbridge detecting structure.The MIM capacitor of each layer is passed through logical
Hole (via) is all connected in parallel, so that it may the plural parallel stage structure of MIM capacitor is formed, it is infrared so as to significantly promote MEMS
The numerical value of the unit-area capacitance of detector, and cost and improving performance therefore can be greatly lowered.
Detailed description of the invention
Fig. 1 is a kind of MEMS infrared detector structure schematic diagram of a preferred embodiment of the present invention.
Fig. 2 is the plural parallel stage electrical block diagram being made of five MIM capacitors of a preferred embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It should be noted that in following specific embodiments, when describing embodiments of the invention in detail, in order to clear
Ground indicates structure of the invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should be avoided in this, as limitation of the invention to understand.
In specific embodiment of the invention below, referring to FIG. 1, Fig. 1 is one kind of a preferred embodiment of the present invention
MEMS infrared detector structure schematic diagram.As shown in Figure 1, a kind of MEMS infrared detector structure of the invention, comprising: setting exists
Multiple layer metal interconnection layer in semiconductor substrate, and the infrared microbridge detecting structure of multiple layer metal upperside interconnection layer is set
17。
Referring to FIG. 1, it shows most upper one positioned at T layers in the multiple layer metal interconnection layer of MEMS infrared detector structure
Layer metal interconnecting layer (MT) 13,24 and the adjacent n-th layer metal interconnecting layer (Mn) positioned at 13,24 lower section of top layer's metal interconnecting layer
7.Multiple layer metal interconnection layer may be provided in the first interlayer dielectric layer 9.
As an optional embodiment, the upside of n-th layer metal interconnecting layer 7 be equipped with one layer of first MIM capacitor layer 1,
8,2.One layer of first MIM capacitor layer 3,27,4 also is provided in the downside of T layers of metal interconnecting layer 24.The invention is not limited thereto.
Wherein, positioned at the first MIM capacitor layer 1,8,2 of the upside of n-th layer metal interconnecting layer 7, including two pole plate layers 1,2 and
The first electricity between two pole plate layers and between the first MIM capacitor layer 1,8,2 and n-th layer metal interconnecting layer 7 is situated between
Matter layer 8.The first MIM capacitor layer 3,27,4 positioned at T layers of 24 downside of metal interconnecting layer, also includes two pole plate layers 3,4 and position
The first dielectric layer 27 between two pole plate layers, and it is located at the first MIM capacitor layer 3,27,4 and T layers of metal interconnecting layer
The first dielectric layer 26 between 24.First dielectric layer 8,26,27 can be identical with the material of the first interlayer dielectric layer 9, and can
It is made of conventional dielectric material.Conventional metal material production can be used in pole plate layer 1-4.
Using two pole plate layers 1,2 of a first MIM capacitor layer positioned at 7 upside of n-th layer metal interconnecting layer, and will
N-th layer metal interconnecting layer 7 below also serves as a capacitor plate layer, these three capacitor plate layers 1,2,7 are combined,
Two the first MIM capacitors in parallel can be formed.Can by the first MIM capacitor layer two pole plate layers 1,2 and its between first
Dielectric layer 8 is formed together first the first MIM capacitor 1,8,2；And by being interconnected in the first MIM capacitor layer close to n-th layer metal
Layer a pole plate layer 1 and n-th layer metal interconnecting layer 7 and its between the first dielectric layer 8 be formed together second the first MIM
Capacitor 1,8,7.The pole plates 1,2,7 of three pole plate layers is subjected to different connections using first through hole, can be formed two it is in parallel
First MIM capacitor.
Meanwhile using two pole plate layers of another the first MIM capacitor layer for being located at 24 downside of T layers of metal interconnecting layer
3,4, and T layers of metal interconnecting layer 24 above it are also served as into a capacitor plate layer, by these three capacitor plate layers 3,4,
24 are combined, and can form two the first MIM capacitors in parallel.Can by the first MIM capacitor layer two pole plate layers 3,4 and
The first dielectric layer 27 between it is formed together the first MIM capacitor 3,27,4 of third；And by close in the first MIM capacitor layer
One pole plate layer 4 of T layers of metal interconnecting layer and T layers of metal interconnecting layer 24 and its between the first dielectric layer 26 shape together
At the 4th the first MIM capacitor 4,26,24.The pole plate 3,4,24 of three pole plate layers is subjected to different connections using first through hole,
Two the first MIM capacitors in parallel can be formed again.
To be located at the first MIM capacitor of two to be in parallel 1,8,7 and 1,8,2 of n-th layer with positioned at T layers be in parallel
Two the first MIM capacitors 3,27,4 and 4,26,24 are all connected in parallel by first through hole 10,12,25,28,29 etc., so that it may
Plural parallel stage (cascade) structure being made of multiple first MIM capacitors is formed in multiple layer metal interconnection layer.Specifically can include:
By n-th layer metal interconnecting layer 7 be used as capacitor plate layer T layer metal interconnecting layer 24 pass through first through hole 29 into
Row connection.
Pole plate layer 1 is attached with conventional T layers of metal interconnecting layer 13 by first through hole 10.
Pole plate layer 2 is attached with T layers of metal interconnecting layer 24 for being used as capacitor plate layer by first through hole 28.
And pole plate layer 3 is connected with T layers of metal interconnecting layer 24 for being used as capacitor plate layer by first through hole 25
It connects.
Pole plate layer 4 is attached with conventional T layers of metal interconnecting layer 13 by first through hole 12.To form four phases
The first MIM capacitor being arranged in parallel.
By above-mentioned connection type, the associated relation between pole plate layer 2 and pole plate layer 3 can be also kept, it in this way can be to avoid
The adverse effects such as parasitism caused by the coupling between capacitor plate.
Please refer to Fig. 1.The second inter-level dielectric can be equipped between infrared microbridge detecting structure 17 and T layers of metal interconnecting layer 24
Layer 21.In T layers of metal interconnecting layer 24 can same layer be equipped with PAD structure 11, PAD structure 11 connect T layers of metal interconnecting layer 13,
24.The second through-hole of connection PAD structure 11 can be passed through between infrared microbridge detecting structure 17 and T layers of metal interconnecting layer 13,24
14, it 23 is attached.
Please continue to refer to Fig. 1.One layer of second MIM capacitor layer 5,20,6 can be also equipped in second interlayer dielectric layer 21；It utilizes
Second MIM capacitor layer 5,20,6 can form second MIM capacitor 5,20,6.Wherein, the second MIM capacitor 5,20,6 can pass through
Three through-holes 16,22 connect T layers of metal interconnecting layer 13,24；I.e. the pole plate layer 5 of the second MIM capacitor layer be used as capacitor plate layer
T layers of metal interconnecting layer 24 be attached by third through-hole 22, pole plate layer 6 passes through with routinely T layers of metal interconnecting layer 13
Third through-hole 16 is attached.In this way, pole plate layer 5 may make to be connected with T layers of metal interconnecting layer 24, to avoid capacitor plate it
Between coupling caused by the adverse effects such as parasitism.
Such second MIM capacitor 5,20,6 can with aforementioned four first MIM capacitor 1,8,7,1,8,2,3,27,4 and 4,
26, the 24 plural parallel stage structure for being formed together five MIM capacitors in the second interlayer dielectric layer and metal interconnecting layer, thus
Significantly improve the capacitance size of unit area.
Fig. 2 shows the plural parallel stage circuit structure of above-mentioned five MIM capacitors.In figure, pole plate layer 1 and pole plate layer 2, pole plate layer
3 respectively constitute a MIM capacitor with pole plate layer 4, pole plate layer 5 and pole plate layer 6, pole plate layer 1 and n-th layer metal interconnecting layer (Mn) 7,
Pole plate layer 4 and T layers of metal interconnecting layer (MT) 24 respectively constitute a MIM capacitor, this five MIM capacitors are together in parallel, shape
At the circuit structure of plural parallel stage.
Please refer to Fig. 1.Electrode layer 15 can be also equipped in second interlayer dielectric layer 21；Electrode layer 15 and the second MIM capacitor layer
5,20,6 can same layer setting.Infrared microbridge detecting structure 17 can by electrode layer 15 connect the second through-hole 14,23, thus by according to
The electrode layer 15 of secondary connection, the second through-hole 14,23, PAD structure 11 are connected to metal interconnecting layer 13,24.
Resonant cavity 18 is equipped between infrared microbridge detecting structure 17 and the second interlayer dielectric layer 21.Positioned at 18 bottom of resonant cavity
The second interlayer dielectric layer 21 on can be equipped with reflecting layer (refl) 19.Isolated one layer is used alone in reflecting layer 19, with the 2nd MIM
Capacitor layers 5,20,6 isolate setting by dielectric layer, to avoid the voltage on capacitor plate to the shadow of subsequent microbridge bridge deck structure
It rings.
In conclusion the present invention makes full use of the bedding void in metal interconnecting layer to add MIM capacitor layer, by MIM capacitor
Two pole plate layers of layer combine to form two MIM capacitors in parallel with metal interconnecting layer；Also, metal interconnecting layer can also be utilized
MIM capacitor layer is added in gap between infrared microbridge detecting structure.The MIM capacitor of each layer is all connected in parallel on one by through-hole
It rises, so that it may the plural parallel stage structure of MIM capacitor is formed, so as to significantly promote the unit-area capacitance of MEMS infrared detector
Numerical value, and cost and improving performance therefore can be greatly lowered.
Above is merely a preferred embodiment of the present invention, the scope of patent protection that embodiment is not intended to limit the invention,
Therefore all to change with equivalent structure made by specification and accompanying drawing content of the invention, it similarly should be included in of the invention
In protection scope.
Claims (9)
1. a kind of MEMS infrared detector structure characterized by comprising
Multiple layer metal interconnection layer on substrate and the infrared microbridge detecting structure on the multiple layer metal interconnection layer；
Wherein,
At least side of at least one layer of metal interconnecting layer is equipped with one layer of first MIM capacitor layer, utilizes described the first of every side
The two pole plate layers and respective side of MIM capacitor layer also serve as the combination between the metal interconnecting layer of pole plate layer, form two
First MIM capacitor in parallel；It is all connected in parallel by first MIM capacitor that each layer is in parallel, described in multilayer
The plural parallel stage structure of first MIM capacitor is formed in metal interconnecting layer.
2. MEMS infrared detector structure according to claim 1, which is characterized in that between each first MIM capacitor
It is connected in parallel by first through hole realization.
3. MEMS infrared detector structure according to claim 1, which is characterized in that the infrared microbridge detecting structure with
It is attached between the multiple layer metal interconnection layer by the second through-hole.
4. MEMS infrared detector structure according to claim 3, which is characterized in that the multiple layer metal interconnection layer is most
Same layer is equipped with PAD structure in the metal interconnecting layer of upper layer, and second through-hole connects the PAD structure, and the PAD structure connects institute
State top layer's metal interconnecting layer of multiple layer metal interconnection layer.
5. MEMS infrared detector structure according to claim 1 to 4, which is characterized in that the multiple layer metal interconnection
Layer is set in the first interlayer dielectric layer.
6. MEMS infrared detector structure according to claim 1 to 4, which is characterized in that the infrared microbridge detection
The second interlayer dielectric layer is equipped between structure and the multiple layer metal interconnection layer.
7. MEMS infrared detector structure according to claim 6, which is characterized in that set in second interlayer dielectric layer
There is one layer of second MIM capacitor layer, and form one second MIM capacitor, second MIM capacitor is connected described more by third through-hole
Top layer's metal interconnecting layer of layer metal interconnecting layer, and be formed together with first MIM capacitor and be situated between positioned at second interlayer
MIM capacitor plural parallel stage structure in matter layer and the metal interconnecting layer.
8. MEMS infrared detector structure according to claim 7, which is characterized in that in second interlayer dielectric layer also
Equipped with electrode layer, the electrode layer and the second MIM capacitor layer same layer are arranged, and the infrared microbridge detecting structure passes through described
Electrode layer connects second through-hole.
9. MEMS infrared detector structure according to claim 7, which is characterized in that set on second interlayer dielectric layer
There is reflecting layer, the reflecting layer and the second MIM capacitor layer isolate setting.
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Application publication date: 20190621 |