CN114112058A - Microbridge structure and preparation method thereof - Google Patents
Microbridge structure and preparation method thereof Download PDFInfo
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- CN114112058A CN114112058A CN202111398651.7A CN202111398651A CN114112058A CN 114112058 A CN114112058 A CN 114112058A CN 202111398651 A CN202111398651 A CN 202111398651A CN 114112058 A CN114112058 A CN 114112058A
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- 238000010521 absorption reaction Methods 0.000 claims abstract description 100
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
Abstract
The invention provides a micro-bridge structure and a preparation method thereof, belonging to the technical field of optics. The microbridge structure includes: an absorbing layer, a thermosensitive layer and an electrical connection layer; wherein the absorption layer, the thermosensitive layer and the electrical connection layer are sequentially arranged along an incident direction of incident radiation; one side of the absorption layer facing the incident radiation is provided with a micro-nano structure, and the micro-nano structure is a sub-wavelength structure. By the microbridge structure and the preparation method thereof provided by the embodiment of the invention, the absorption rate of the microbridge structure to incident radiation is increased under the condition that the filling coefficient of the absorption layer is not increased, and the performance of the microbridge structure is improved, so that the performance of a bolometer adopting the microbridge structure is improved.
Description
Technical Field
The application relates to the technical field of optical devices, in particular to a microbridge structure and a preparation method thereof.
Background
The bolometer comprises an absorption layer, a thermosensitive layer, and an electrical connection layer. The infrared radiation absorbed by the absorption layer is converted into an electric signal through the thermosensitive layer and then is output through the electric connection layer, so that infrared detection is realized. Microbridge structures including an absorbing layer are often employed to improve the performance of the bolometer. The absorption layer is arranged on the bridge surface of the micro-bridge structure, and the bridge surface is supported by the bridge legs. The larger the duty ratio of the bridge leg is, the more stable the micro-bridge structure is; the thinner the bridge legs, the better the thermal insulation of the microbridge structure. The parameter for measuring the effect of the absorption layer is the filling coefficient, namely the duty ratio of the bridge deck. The higher the fill factor, the better the absorption of the incident radiation by the absorbing layer.
The related art improves the filling coefficient of the absorption layer by increasing the number of layers of the microbridge structure, thereby improving the performance of the bolometer.
In the course of implementing the present application, the inventors found that there are at least the following problems in the related art:
with the development of bolometers, a technical gap is encountered in reducing the size of a pixel. When the pixel size is reduced, the size of the bridge legs cannot be reduced too much in order to ensure the mechanical and thermal insulation properties of the micro-bridge structure. This results in an increased duty cycle of the bridge legs, which further reduces the duty cycle of the deck, i.e. the absorption layer fill factor, further resulting in a reduced performance of the bolometer.
Disclosure of Invention
In order to solve the technical problem that the performance of a bolometer is reduced due to the fact that the filling coefficient is reduced along with the reduction of the size of a pixel in the related art, the embodiment of the application provides a micro-bridge structure and a bolometer comprising the same and a manufacturing method of the bolometer.
In a first aspect, embodiments of the present application provide a microbridge structure that includes an absorption layer, a thermosensitive layer, and an electrical connection layer;
wherein the absorption layer, the thermosensitive layer and the electrical connection layer are sequentially arranged along an incident direction of incident radiation;
one side of the absorption layer facing the incident radiation is provided with a micro-nano structure, and the micro-nano structure is a sub-wavelength structure.
Optionally, the micro-nano structure is divided into four quadrants by a first cross section and a second cross section;
the projection of the shape of the micro-nano structure in any quadrant on the first section is the same as the projection on the second section;
the shape in any quadrant is symmetrical along the first cross section and the second cross section to form the shape of the micro-nano structure;
the first cross section is perpendicular to the second cross section, and the first cross section is intersected with the second cross section to obtain a height axis of the micro-nano structure.
Optionally, the micro-nano structures are arranged in an array in the form of superstructure units;
the superstructure unit is in a shape of a close-packable pattern;
the micro-nano structure is vertically arranged at the center and/or the vertex position of the close-packed graph.
Optionally, the shapes of any two superstructure units are different.
Optionally, any two superstructure units are the same shape.
Optionally, the period of the micro-nano structure is greater than or equal to 300nm and less than or equal to 1500 nm.
Optionally, the periods of any two micro-nano structures are different.
Optionally, the periods of any two micro-nano structures are the same.
Optionally, the shapes of any two micro-nano structures in the micro-bridge structure are all the same.
Optionally, the shape of any two micro-nano structures in the micro-bridge structure is partially the same.
Optionally, the absorption layer and the micro-nano structure are made of the same material.
Optionally, the absorption layer and the micro-nano structure are made of different materials.
Optionally, an aspect ratio of the micro-nano structure is less than or equal to 20.
Optionally, the micro-nano structure comprises a cylinder, a square column, a hollow cylinder, a hollow square column, a circular ring column and a square ring column.
Optionally, the material of the micro-nano structure comprises at least one of crystalline silicon and crystalline germanium.
Optionally, the absorbing layer comprises a light-receiving layer and a support layer;
wherein the support layer is used for supporting the light-receiving layer, so that the distance between the light-receiving layer and the heat-sensitive layer is greater than or equal to zero;
the micro-nano structure is positioned on one side of the light receiving layer far away from the supporting layer.
Optionally, the absorption layer is of an umbrella-shaped structure;
the supporting layer is positioned in the center of the surface of the heat-sensitive layer;
the light receiving layer covers the bridge deck of the micro-bridge structure.
Optionally, the material of the absorption layer comprises at least one of crystalline silicon and crystalline germanium.
Optionally, the microbridge structure further comprises an antireflection film; the antireflection film is located between the absorption layer and the thermosensitive layer.
Optionally, the thickness of the antireflection film is an odd multiple of a quarter wavelength of incident radiation.
In a second aspect, embodiments of the present application further provide a bolometer including a microbridge structure according to any one of the above embodiments.
In a third aspect, an embodiment of the present application provides a method for manufacturing a microbridge structure, which is applicable to the microbridge structure described in any one of the embodiments above, including:
arranging the heat-sensitive layer on one side of the electric connection layer;
coating a first coating layer on one side of the electric connection layer, which is provided with the thermosensitive layer;
exposing a first inverse structure on the first cladding layer; the first inverse structure at least partially exposes the thermosensitive layer;
forming the absorbing layer on the exposed surface of the thermosensitive layer using the first inverse structure such that the absorbing layer covers the deck of the microbridge structure;
removing the first coating layer to obtain the absorption layer;
and forming the micro-nano structure on the light receiving side of the absorption layer.
Optionally, the forming the micro-nano structure on the light receiving side of the absorption layer includes:
coating a second cladding layer on the light receiving side of the absorption layer;
exposing a second inverse structure on the second cladding layer;
etching a third inverse structure on the absorption layer through the second inverse structure;
and removing the second coating layer, wherein the structure retained by the absorption layer is the micro-nano structure.
Optionally, the forming the micro-nano structure on the light receiving side of the absorption layer includes:
forming a structural layer on a light receiving side of the absorption layer;
coating a third coating layer on the side of the structural layer far away from the absorption layer;
exposing a third inverse structure on the third cladding layer;
exposing a fourth inverse structure on the structural layer through the third inverse structure;
and removing the third coating layer, wherein the structure retained by the structural layer is the micro-nano structure.
Optionally, the absorption layer is of an umbrella structure.
According to the micro-bridge structure and the manufacturing method thereof, the micro-nano structure is arranged on the light receiving side of the absorption layer, reflection and transmission of incident radiation are reduced, and the absorption rate of the micro-bridge structure is improved under the condition that the filling coefficient of the absorption layer is not increased.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the background art of the present application, the drawings required to be used in the embodiments or the background art of the present application will be described below.
FIG. 1 is a schematic diagram illustrating an alternative micro-bridge structure provided in an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating an alternative micro-bridge structure provided by an embodiment of the present application;
FIG. 3 is a schematic diagram illustrating an alternative micro-bridge structure provided by an embodiment of the present application;
FIG. 4 shows an alternative structural schematic of a superstructure unit provided by embodiments of the present application;
fig. 5 shows a schematic diagram of yet another alternative structure of a superstructure unit provided by an embodiment of the present application;
fig. 6 shows an alternative structural schematic diagram of a micro-nano structure provided in an embodiment of the present application;
fig. 7 shows a schematic structural diagram of yet another alternative micro-nano structure provided in an embodiment of the present application;
fig. 8 shows a schematic structural diagram of yet another alternative micro-nano structure provided in an embodiment of the present application;
fig. 9 illustrates an absorption rate of incident radiation by an alternative micro-nano structure provided in an embodiment of the present application;
FIG. 10 is a flow chart illustrating a method for fabricating a microbridge structure provided in embodiments of the present application;
FIG. 11 is a schematic diagram illustrating a method for fabricating a microbridge structure according to embodiments of the present application;
fig. 12 is a schematic view illustrating a method for manufacturing a microbridge structure according to an embodiment of the present disclosure.
The reference numerals in the drawings denote:
100-an absorbent layer; 101-micro-nano structure; 102-superstructure unit; 103-a light-receiving layer; 104-an absorbing layer;
200-a thermosensitive layer; 300-an electrical connection layer;
400-a first cladding layer; 401 — first inverse structure; 500-a second cladding layer; 501-a second inverse structure; 600-structural layer; 700-a third cladding layer; 701-a third inverse structure; 702-a fourth inverse structure;
800-antireflection coating.
Detailed Description
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings. It should be noted that, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and may include, for example, fixed connections, removable connections, or integral connections; either mechanically or electrically: the connection may be direct or indirect via an intermediate medium, and may be a communication between the two elements. Specific meanings of the above terms in the embodiments of the present application can be understood in specific cases by those of ordinary skill in the art.
It should be understood that the terms "first," "second," and the like in the description of the present application are used for distinguishing and do not denote an order, priority, or quantity. The features of the following examples and embodiments may be combined with each other without conflict.
The embodiments of the present application will be described below with reference to the drawings.
A microbridge structure provided by the embodiments of the present application, as shown in fig. 1 to 3, includes an absorption layer 100, a thermosensitive layer 200, and an electrical connection layer 300;
wherein the absorption layer 100, the thermosensitive layer 200, and the electrical connection layer 300 are sequentially arranged along the incident direction of the incident radiation. The absorption layer 100 is provided with a micro-nano structure 101 on one side facing the incident radiation, and the micro-nano structure 101 is a sub-wavelength structure.
Specifically, the subwavelength structure refers to a periodic structure having a characteristic dimension of the structure comparable to or smaller than an operating wavelength. The micro-nano structure 101 has a modulation effect on the phase of radiation, and when the radiation irradiates the micro-bridge structure provided by the embodiment of the application, the micro-nano structure 101 reduces the reflection and transmission of the radiation, so that the radiation absorption rate is improved. It can also be understood that, since the absorption is the conversion of the incident radiation and the energy of the material, the micro-nano structure 101 with high energy conversion rate is selected according to the wavelength of the incident radiation, so that the absorption rate of the micro-nano structure 101 to the incident radiation can be improved. Optionally, the incident radiation comprises radiation in the infrared band.
In an alternative embodiment, the micro-nano structure 101 is divided into four quadrants by a first cross section and a second cross section; the projection of the shape of the micro-nano structure 10 in any quadrant on the first cross section is the same as the projection on the second cross section; the shape in any quadrant is symmetrical along the first cross section and the second cross section to form the shape of the micro-nano structure 101; the first cross section is perpendicular to the second cross section, and the height axis of the micro-nano structure 101 is obtained by intersecting the first cross section with the second cross section. This shape makes the modulation of the incident radiation by the micro-nano structure 101 independent of the polarization state of the incident radiation. Preferably, the material of the micro-nano structure 101 includes at least one of crystalline silicon and crystalline germanium. Advantageously, the material of the absorption layer 100 includes at least one of crystalline silicon and crystalline germanium.
Further, the bridge deck of the micro-bridge structure provided by the embodiment of the application comprises a single-layer bridge deck, a double-layer bridge deck and a multi-layer bridge deck, and the absorption of incident radiation can be improved as long as the micro-nano structure 101 is arranged on the light receiving side of the absorption layer 100. The absorption layer 100 and the heat-sensitive layer 200 of the single-deck microbridge structure are positioned on the same deck; the absorption layer 100 and the heat-sensitive layer 200 of the double-deck or multi-deck microbridge structure are respectively positioned on different decks. The double-layer or multi-layer bridge deck prevents the absorption layer 100 and the heat-sensitive layer 200 from being heated synchronously by arranging the absorption layer 100 and the heat-sensitive layer 200 on different bridge decks, thereby causing the performance of the heat-sensitive layer 200 to be reduced. Optionally, the micro-bridge structure of the embodiment of the present application is a double-layer micro-bridge structure.
For example, the absorption layer 100 includes a light-receiving layer 102 and a support layer 103. Wherein, the support layer 103 is used for supporting the light-receiving layer 102, so that the distance between the light-receiving layer 103 and the heat-sensitive layer 200 is greater than zero; the micro-nano structure 101 is positioned on one side of the light receiving layer 102 far away from the support layer 103.
Preferably, as shown in fig. 3, in the embodiment of the present application, the absorption layer 100 is a mushroom structure, wherein the support layer 103 is located near the center of the surface of the thermosensitive layer 200; the light-receiving layer 102 covers the deck of the microbridge structure. The umbrella-shaped structure is a double-layer microbridge structure, the absorption layer and the thermosensitive layer are not on the same plane, heat transfer between the absorption layer and the thermosensitive layer is reduced by reducing the duty ratio of the bridge legs, the absorption layer and the thermosensitive layer are prevented from being heated simultaneously, and the performance of the microbridge structure is improved. Compared with a single-layer micro-bridge structure, the duty ratio of the bridge legs of the umbrella-shaped structure is small, the duty ratio of the bridge deck is large, and the filling coefficient of the absorption layer is large. Compared with a multilayer micro-bridge structure, the umbrella-shaped structure is simple in structure and low in design and processing difficulty.
In an alternative embodiment, as shown in fig. 1, the micro-nano structure 101 provided in the embodiment of the present application has a height not exceeding the light receiving surface of the absorption layer 100, and can be obtained by, for example, direct photolithography on the absorption layer 100. At this moment, the optical performance and the heat conduction performance of the materials of the micro-nano structure 101 and the absorption layer 100 are the same, the design difficulty is low, and the processing steps are simple. In yet another alternative implementation, as shown in fig. 2, the micro-nano structure 101 provided in this embodiment may be obtained by growing on the surface of the absorption layer 100 through a semiconductor process. At this time, the materials of the micro-nano structure 101 and the absorption layer 100 have different optical properties and heat conduction properties, the design freedom of the micro-nano structure 101 is high, and the modulation of the micro-nano structure 101 on incident radiation can be enhanced through more flexible design.
In the embodiment of the present application, optionally, as shown in fig. 4 and 5, the micro-nano structures 101 are arranged in an array in the form of superstructure units 102. The superstructure unit 102 is in a shape of a close-packageable pattern, and the micro-nano structure 101 is erected at the center and/or the vertex position of the close-packageable pattern. Illustratively, the close-packable pattern includes, but is not limited to, at least one of a regular triangle, a square, a regular hexagon, and a fan. For example, the close-packable pattern may also be rectangular, circular, annular, etc. in shape.
In the embodiment of the present application, optionally, the periods of any two superstructure units 102 may be the same or different. For example, in order to reduce the production cost, the period of the superstructure unit 102 near the center of the light receiving surface is small, and the period of the superstructure unit 102 near the edge of the light receiving surface is large. In this case, the center of the light-receiving surface is modulated with incident radiation with higher precision than the edge of the light-receiving surface, and the absorption rate is correspondingly higher. It should be understood that any two superstructure units 102 may have the same shape or different shapes, as long as the micro-nano structure 101 in the superstructure unit 102 can modulate incident radiation, reduce reflection and transmission of the incident radiation, and improve the absorptivity of the incident radiation. Preferably, the period of the micro-nano structure 101 is greater than or equal to 300nm and less than or equal to 1500 nm. The micro-nano structures 101 may have the same or different periods.
The shape and the characteristic size of the micro-nano structure 101 in the embodiment of the application influence the modulation capability of the micro-nano structure 101 on incident radiation. Illustratively, the shape of the micro-nano structure 101 in the embodiment of the present application includes a cylinder, a square column, a hollow cylinder, a hollow square column, a circular ring column, and a square ring column. Fig. 6, 7 and 8 respectively show examples in which the micro-nano structure 101 is a circular square-hole column, a cross-shaped column and a square circular-hole column. It should be understood that the shape of the micro-nano structure 101 is not limited to the above shape, and for example, the micro-nano structure 101 may also be a columnar structure having a topological shape in cross section. Further, the shapes of the micro-nano structures 101 in the micro-bridge structure provided by the embodiment of the present application may be all the same or may be partially the same. Preferably, the micro-nano structure 101 has an aspect ratio of less than or equal to 20.
Exemplarily, fig. 9 shows the absorbance contrast of the microbridge structure with the micro-nano structure 101 provided in the embodiment of the present application and the conventional microbridge structure without the micro-nano structure 101 in the wavelength band of 8 μm to 12 μm. In fig. 9, wnostructure represents the absorptivity of a microbridge structure having the micronano structure 101, and W/Onanostructure represents the absorptivity of a microbridge structure having no micronano structure 101. As can be seen from FIG. 9, the absorption rate of the microbridge structure provided by the embodiment of the present application to incident radiation reaches 95% or more in the wavelength band from 8 μm to 12 μm. And the traditional micro-bridge structure without the micro-nano structure 101 has an absorption rate of incident radiation of less than 80%, which is obviously lower than that of the micro-bridge structure provided by the embodiment of the application.
Further, as shown in fig. 3, the micro-bridge structure provided in the embodiment of the present application further includes an antireflection film 800, where the antireflection film 800 is located between the absorption layer 100 and the thermosensitive layer 200. Alternatively, when the incident radiation has a broad spectrum, the antireflection film 800 may have a multilayer structure, and the specific structure depends on the wavelength of the incident radiation. Alternatively, when the incident radiation is a single wavelength, the thickness of antireflection film 800 is an odd multiple of a quarter wavelength of the incident radiation. The antireflection film 800 may reflect incident radiation transmitted through the absorbing layer 100 back to the absorbing layer 100 to interfere with incident radiation reflected at the surface of the absorbing layer 100. For incident radiation of the same wavelength, since the optical path length difference of the incident radiation reflected by the antireflection film 800 and the absorption layer 100 is one-half wavelength, the two reflected radiations interfere destructively, thereby reducing the reflectivity of the absorption layer 100, and thus improving the absorptivity and transmittance of the absorption layer 100 as a whole.
The micro-bridge structure provided by the embodiment of the application has the advantages that the micro-nano structure is arranged on the light receiving side of the absorption layer, the absorption rate of the micro-bridge structure to incident radiation is increased under the condition that the filling coefficient of the micro-bridge structure is not changed, and the absorption effect of the micro-bridge structure is improved. The embodiment of the application also reduces the contact area of the absorption layer and the thermosensitive layer through the umbrella-shaped microbridge structure, and avoids the influence of synchronous temperature rise of the absorption layer and the thermosensitive layer on the performance of the thermosensitive layer.
Embodiments of the present application further provide a bolometer comprising a microbridge structure according to any of the embodiments described above.
When incident radiation illuminates the bolometer, the micro-bridge structure absorbs the incident radiation through the micro-nano structure 101 and the absorbing layer 100 and conducts heat to the thermosensitive layer 200. The thermosensitive layer 200 converts the received heat into an electrical signal and outputs to the electrical connection layer 300. Optionally, a gap exists between the thermosensitive layer 200 and the electrical connection layer 300 to prevent heat from the thermosensitive layer 200 from transferring to the electrical connection layer 300 to cause heat loss, thereby affecting the performance of the bolometer.
The bolometer provided by the embodiment of the application has the advantages that the micro-nano structure is arranged on the light receiving side of the absorption layer, the absorption rate of incident radiation is improved through the micro-nano structure, and the absorption efficiency of the bolometer is further improved.
The embodiment of the present application further provides a method for manufacturing a micro-bridge structure, which is applicable to any one of the micro-bridge structures in the embodiments described above, and as shown in fig. 10, the method at least includes:
in step S1, the thermosensitive layer 200 is disposed on one side of the electrical connection layer 300.
In step S2, the first coating layer 400 is coated on the side of the electrical connection layer 300 where the thermosensitive layer 200 is disposed.
Step S3, exposing a first inverse structure 401 on the first clad layer 400; the first inverse structure 401 exposes the thermosensitive layer 200 at least partially.
In step S4, the absorption layer 100 is formed on the exposed surface of the thermosensitive layer 200 using the first inverse structure 401 such that the absorption layer 100 covers the deck of the microbridge structure.
In step S5, the first clad layer 400 is removed, resulting in the absorption layer 100.
In step S6, the micro-nano structure 101 is formed on the light receiving side of the absorption layer 100.
Further, as shown in fig. 11, the forming of the micro-nano structure 101 on the light receiving side of the absorption layer 100 includes the following steps:
in step S601a, the light receiving side of the absorption layer 100 is coated with a second cladding layer 500.
In step S602a, a second inverse structure 501 is exposed on the second cladding layer 500.
In step S603a, a third inverse structure 502 is etched in the absorption layer 100 through the second inverse structure 501.
Step S604a, the second cladding layer 500 is removed, and the structure of the absorption layer 100 is retained as the micro-nano structure 101.
Further, as shown in fig. 12, forming the micro-nano structure 101 on the light receiving side of the absorption layer 100 includes:
in step S601b, the structural layer 600 is formed on the light-receiving side of the absorption layer 100. Illustratively, the manner of forming the structural layer 600 is deposition.
Step S602b, a third cover layer 700 is applied to the side of the structural layer 600 away from the absorbent layer 100.
In step S603b, a third inverse structure 701 is exposed on the third cladding layer 700.
In step S604b, a fourth inverse structure 702 is exposed on the structural layer 600 through the third inverse structure 701.
Step S605, removing the third cladding layer 700, and the structure retained by the structure layer 600 is the micro-nano structure 101.
It should be noted that the coating used in any of the above embodiments is a photoresist or a mask. Preferably, the absorption layer 100 in the method for preparing any one of the microbridge structures in the above embodiments is an umbrella-shaped structure.
In summary, according to the micro-bridge structure and the preparation method thereof provided by the embodiment of the application, the micro-nano structure is arranged on the light receiving side of the absorption layer, so that the absorption rate of the micro-bridge structure to incident radiation is increased under the condition that the filling coefficient of the micro-bridge structure is not changed, and the absorption effect of the micro-bridge structure is improved. The embodiment of the application also reduces the contact area of the absorption layer and the thermosensitive layer through the umbrella-shaped microbridge structure, and avoids the influence of synchronous temperature rise of the absorption layer and the thermosensitive layer on the performance of the thermosensitive layer.
The above description is only a specific implementation of the embodiments of the present application, but the scope of the embodiments of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the embodiments disclosed in the present application, and all the changes or substitutions should be covered by the scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the protection scope of the claims.
Claims (25)
1. A microbridge structure, characterized in that it comprises an absorbing layer (100), a thermosensitive layer (200) and an electrical connection layer (300);
wherein the absorption layer (100), the thermosensitive layer (200) and the electrical connection layer (300) are arranged in sequence along an incident direction of incident radiation;
one side, facing incident radiation, of the absorption layer (100) is provided with a micro-nano structure (101), and the micro-nano structure (101) is of a sub-wavelength structure.
2. The micro-bridge structure according to claim 1, wherein the micro-nano structure (101) is divided into four quadrants by a first cross section and a second cross section;
the projection of the shape of the micro-nano structure (101) in any quadrant on the first cross section is the same as the projection on the second cross section;
the shape in any quadrant is symmetrical along the first cross section and the second cross section to form the shape of the micro-nano structure (101);
the first cross section is perpendicular to the second cross section, and the height axis of the micro-nano structure (101) is obtained by intersecting the first cross section and the second cross section.
3. The microbridge structure of claim 1, wherein the micro-nano structures (101) are arranged in an array in the form of superstructure units (102);
the superstructure unit (102) is shaped as a close-packable pattern;
the micro-nano structure (101) is vertically arranged at the center and/or the vertex position of the densely-packed graph.
4. The micro-bridge structure of claim 3, wherein any two superstructure units (102) differ in shape.
5. The micro-bridge structure of claim 3, wherein any two superstructure units (102) are identical in shape.
6. The microbridge structure according to claim 1, wherein the period of the micronano structure (101) is greater than or equal to 300nm and less than or equal to 1500 nm.
7. The microbridge structure of claim 1, wherein any two of the micro-nano structures (101) have different periods.
8. The microbridge structure of claim 1, wherein the period of any two of the micro-nano structures (101) is the same.
9. The microbridge structure according to any one of claims 1 to 8, wherein any two of the micronano structures (101) in the microbridge structure are all the same shape.
10. The micro-bridge structure according to any of claims 1 to 8, wherein any two micro-nano structures (101) in the micro-bridge structure are partially identical in shape.
11. Microbridge structure according to any of claims 1 to 8, wherein the absorption layer (100) and the micronano structure (101) are of the same material.
12. Microbridge structure according to any of claims 1 to 8, wherein the absorption layer (100) and the micronano structure (101) are of different materials.
13. Microbridge structure according to any of claims 1 to 8, wherein the depth to width ratio of the micronano structure (101) is less than or equal to 20.
14. The micro-bridge structure according to any of claims 1 to 8, wherein the micro-nano structure (101) has a shape comprising a cylinder, a square column, a hollow cylinder, a hollow square column, a circular ring column and a square ring column.
15. The microbridge structure of any one of claims 1 to 8, wherein the material of the micronano structure (101) comprises at least one of crystalline silicon and crystalline germanium.
16. The microbridge structure of any of claims 1 to 8, wherein the absorber layer (100) comprises a light-receiving layer (103) and a support layer (104);
wherein the support layer (104) is used for supporting the light-receiving layer (103) so that the distance between the light-receiving layer (104) and the heat-sensitive layer (200) is greater than or equal to zero;
the micro-nano structure (101) is positioned on one side of the light receiving layer (103) far away from the support layer (104).
17. The microbridge structure of claim 16, wherein the absorber layer (100) is an umbrella structure;
wherein the support layer (104) is located at the center of the surface of the heat-sensitive layer (200);
the light-receiving layer (103) covers the deck of the micro-bridge structure.
18. The microbridge structure of any one of claims 1, 11 or 12, wherein the material of the absorber layer (100) comprises at least one of crystalline silicon and crystalline germanium.
19. The microbridge structure of claim 1, further comprising an antireflective film (800); the antireflection film (800) is located between the absorbing layer (100) and the heat-sensitive layer (200).
20. The microbridge structure of claim 19, wherein the antireflective film (800) has a thickness that is an odd multiple of a quarter wavelength of incident radiation.
21. A bolometer comprising a microbridge structure according to any one of claims 1-20.
22. A method for preparing a microbridge structure, which is suitable for use in the microbridge structure according to any one of claims 1 to 20, the method comprising:
providing the heat-sensitive layer (200) on one side of the electrical connection layer (300);
coating a first coating (400) on the side of the electrical connection layer (300) on which the heat-sensitive layer (200) is arranged;
exposing a first inverse structure (401) on the first cladding layer (400); the first inverse structure (401) at least partially exposes the thermosensitive layer (200);
-forming said absorbing layer (100) on the exposed surface of said thermosensitive layer (200) with said first inverse structure (401), so that said absorbing layer (100) covers the deck of said micro-bridge structure;
-removing the first cover layer (400) resulting in the absorption layer (100);
and forming the micro-nano structure (101) on the light receiving side of the absorption layer (100).
23. The method for preparing the microbridge structure according to claim 22, wherein the forming the micronano structure (101) on the light-receiving side of the absorption layer (100) comprises:
applying a second cladding layer (500) to a light receiving side of the absorbing layer (100);
exposing a second inverse structure (501) on the second cladding layer (500);
etching a third inverse structure (502) in the absorption layer (100) through the second inverse structure (501);
and removing the second coating layer (500), wherein the structure retained by the absorption layer (100) is the micro-nano structure (101).
24. The method for preparing the microbridge structure according to claim 22, wherein the forming the micronano structure (101) on the light-receiving side of the absorption layer (100) comprises:
forming a structural layer (600) on a light receiving side of the absorption layer (100);
-applying a third cover layer (700) on the side of the structural layer (600) remote from the absorbent layer (100);
exposing a third inverse structure (701) on the third cladding layer (700);
exposing a fourth inverse structure (702) on the structural layer (600) through the third inverse structure (701);
and removing the third coating layer (700), wherein the structure remained by the structural layer (600) is the micro-nano structure (101).
25. Method for the preparation of a microbridge structure according to any one of claims 22 to 24, characterized in that the absorption layer (100) is of an umbrella structure.
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