CN213902664U - Thermopile infrared sensor - Google Patents
Thermopile infrared sensor Download PDFInfo
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- CN213902664U CN213902664U CN202022004708.8U CN202022004708U CN213902664U CN 213902664 U CN213902664 U CN 213902664U CN 202022004708 U CN202022004708 U CN 202022004708U CN 213902664 U CN213902664 U CN 213902664U
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Abstract
The utility model relates to a thermopile infrared sensor, include: base, induction element, pipe cap and super lens, induction element set up on the base, and the pipe cap cover is located induction element to link to each other with the base, be provided with the mounting hole that corresponds with induction element on the pipe cap, super lens set up in the mounting hole, super lens include that base plate and array set up in the super surface structure on base plate surface, super surface structure is located the one side that is close to induction element. The utility model discloses a set up the super lens of focus in the mounting hole, strengthened induction element effectively to external infrared radiation's detectivity, avoided the introduction of traditional optical lens to bring bulky, inefficiency, difficult integration scheduling problem, have advantages such as detection distance is far away, efficient, easy integration.
Description
Technical Field
The utility model relates to an infrared detection field, more specifically the utility model relates to a thermopile infrared sensor based on super lens that says so.
Background
The infrared detection plays an important role in the military and civil fields. Of the many infrared sensors, thermopile infrared sensors are most widely used. The thermopile infrared sensor mainly depends on the Seebeck effect of materials, and when the photosensitive surface of the sensing unit receives infrared radiation from the outside, the surface of the sensing unit material generates a temperature gradient, and then voltage signals are generated and output. To improve the sensitivity and detection distance of the sensor, it is usually necessary to introduce a condenser lens in the sensing direction for collecting external infrared radiation. However, the conventional optical lens has the disadvantages of large volume, complex processing, easy introduction of additional radiation absorption, and the like, and directly affects the sensitivity and the detection distance of the infrared sensor.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to the above-mentioned defect of prior art, a thermopile infrared sensor based on super lens is provided.
The utility model provides a technical scheme that its technical problem adopted is: a thermopile infrared sensor is presented, comprising:
a base;
the induction unit is arranged on the base;
the pipe cap is covered on the induction unit and connected with the base, and a mounting hole corresponding to the induction unit is formed in the pipe cap;
the super lens is arranged in the mounting hole and comprises a substrate and super surface structures arranged on the surface of the substrate in an array mode, and the super surface structures are positioned on one side close to the sensing units;
the base, the cap and the superlens are packaged together to form a cavity for accommodating the sensing unit.
Further, the super-surface structure comprises a plurality of super-surface units and nano-structures arranged in the central position of each super-surface unit.
Further, the super-surface unit is a regular quadrangle or a regular hexagon, the nano-structure is a nano-columnar structure, the nano-columnar structure comprises any one or more of a positive nano-columnar structure, a negative nano-columnar structure, a hollow nano-columnar structure, a negative hollow nano-columnar structure and a topological nano-columnar structure, and preferably, the hollow nano-columnar structure is a negative hollow nano-columnar structure.
Further, the substrate is made of silicon or germanium, and the nanostructure is made of silicon or germanium.
Further, one side of the super lens, which is the same as the super surface structure, and/or one side of the super lens, which is different from the super surface structure, is plated with an infrared antireflection film, and the target wavelength range of the infrared antireflection film is 8-12 micrometers or 5-15 micrometers.
Further, the superlens has a positive lens phase distribution.
Further, the super lens is circular, and the diameter of the super lens is 2-7 mm.
Further, the superlens is coaxially arranged with the light-sensitive surface of the sensing unit.
Further, the focal length of the super lens is larger than the distance between the super lens and the photosensitive surface of the sensing unit.
Further, the focal length of the super lens is 1-10 mm, and the distance between the super lens and the light sensing surface of the sensing unit is 1-3 mm.
This use neotype thermopile infrared sensor based on super lens of this implementation has following beneficial effect: the utility model discloses an add spotlight super lens before infrared induction unit, the effectual sensor that has strengthened has increased detection distance to external infrared radiation's sensitivity. Compared with the traditional optical lens, the super lens has the advantages of small volume, light weight, easy integration and the like.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The invention will be further explained with reference to the drawings and examples, wherein:
fig. 1A is a schematic structural diagram of a thermopile infrared sensor provided in an embodiment of the present invention;
fig. 1B is a schematic diagram illustrating a principle of use of a thermopile infrared sensor according to an embodiment of the present invention;
fig. 2A is a schematic structural diagram of a superlens provided in an embodiment of the present invention;
fig. 2B is a schematic diagram of an arrangement of regular hexagonal structural units of a superlens according to an embodiment of the present invention;
fig. 3A is a schematic structural diagram of a positive nanocylinder of a superlens according to an embodiment of the present invention;
FIG. 3B is a schematic diagram of the relationship between the optical phase and the cross-sectional diameter of the nano-pillar structure of the superlens provided by the embodiment of the present invention in the wavelength band of 8-12 μm;
FIG. 3C is a schematic diagram of the transmittance of the nano-pillar structure of the superlens in the 8-12 μm band as a function of the cross-sectional diameter according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a coating film system and thickness of a superlens with a target wavelength of 8-12 μm;
FIG. 5A is a schematic diagram of a 10 μm band, 1.7 mm focal length superlens with a curved light phase and a superlens radius according to an embodiment of the present invention;
FIG. 5B is a schematic diagram of a 10 μm waveband superlens with a focal length of 3.16 mm according to the embodiment of the present invention;
fig. 6A is a schematic diagram of the distribution of the superlens surface nano-structure with a 10 μm band and a focal length of 1.7 mm according to the embodiment of the present invention;
FIG. 6B is a schematic diagram of the distribution of the nano-structure on the surface of the superlens with a wavelength of 10 μm and a focal length of 3.16 mm according to the embodiment of the present invention;
fig. 7 is a schematic diagram of the embodiment of the present invention providing a comparison between the ability of the condensing superlens and the prior art ir filter to collect ir radiation at different incident angles;
labeled as: the device comprises a base 1, a sensing unit 2, a tube cap 3, a super lens 4, a substrate 41, a super surface structure 42, a super surface unit 43, a nano structure 44, an infrared antireflection film 45 and a cavity 5.
Detailed Description
The technical solution in the embodiment of the present invention is described clearly and completely with reference to the accompanying drawings in the embodiment of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The utility model provides a thermopile infrared sensor based on a super lens, the structure of an embodiment refers to fig. 1A-2A, a thermopile infrared sensor, a base 1, an induction unit 2, a pipe cap 3 and a super lens 4; the induction unit 2 is arranged on the base 1, the pipe cap 3 covers the induction unit 2 and is connected with the base 1, and the pipe cap 3 is provided with a mounting hole corresponding to the induction unit 2; the super lens 4 is arranged in the mounting hole and comprises a substrate 41 and super surface structures 42 arranged on the surface of the substrate 41 in an array manner, wherein the super surface structures 42 are positioned on one side close to the sensing unit 2; the base 1, the tube cap 3 and the super lens 4 are packaged together to form a cavity 5 for accommodating the sensing unit; the sensing unit 2 may be an infrared sensing unit. Compare in traditional optical lens, super lens 4 has advantages such as small, light in weight, easy integration, through add before induction element 2 super lens 4, super lens is used for spotlight, has effectually strengthened induction element 2 is to external infrared radiation's sensitivity, has increased detection distance simultaneously.
The tube cap 3 is made of opaque metal material to prevent the sensing unit 2 from being interfered by light; the shape of the pipe cap 3 is any shape that meets the requirements of covering, optionally, the shape of the pipe cap 3 may be any one of a hollow cylindrical shape, a circular truncated cone shape, a square shape, and a rectangular parallelepiped shape, and in the present embodiment, a hollow cylindrical aluminum pipe cap is taken as an example for description.
The super lens 4 is erected at the installation hole, the installation hole is in any shape meeting the erection requirement of the super lens 4, and optionally, the installation hole can be in any shape of a circle, an ellipse, a quadrangle or a polygon; the diameter of the mounting hole is greater than or equal to 2 mm and less than or equal to 7 mm. The present embodiment is illustrated with a circular fenestration having a diameter of 2.5 mm, it being understood that the shape and size of the mounting hole may be other choices for meeting the radiation collection requirements.
The mounting hole is positioned in the center of the pipe cap 3 and is coaxially arranged with the photosensitive surface of the induction unit 2; the shape and the size of the super lens 4 are matched with those of the mounting holes; the super lens 4 is erected at the position of the mounting hole and is coaxially arranged with the light-sensitive surface of the induction unit 2; the side of the super surface structure 42 of the super lens 4 faces the photosensitive surface of the sensing unit 2; the distance between the superlens 4 and the light-sensing surface of the sensing unit 2 may be any choice that meets the packaging requirement, and optionally, the distance is greater than or equal to 1 mm and less than or equal to 3 mm, for example, in this embodiment, the arrangement in which the distance between the superlens 4 and the light-sensing surface of the sensing unit 2 is 1 mm is described as an example.
In the thermopile infrared sensor, the substrate 41 may transmit light in an infrared band, the material of the substrate 41 may be selected according to needs, the material of the substrate 1 may be silicon or germanium, the substrate 1 is described as a silicon material in this embodiment, and it is understood that other infrared transparent materials may also be selected. The thickness of the substrate 41 may be designed according to requirements, optionally, the thickness of the substrate 41 is greater than or equal to 0.3 mm and less than or equal to 0.5 mm, and this embodiment is described by taking the substrate 41 with the thickness of 0.3 mm as an example.
As shown in fig. 2B to fig. 3A, the super-surface structure 42 includes a plurality of super-surface units 43 and a nano-structure 44 disposed at a central position of each super-surface unit 43. In the present embodiment, a regular hexagonal array of super-surface structures 42 is used as an example to describe, and a nano-structure 44 is disposed at the center of each super-surface unit 43, and fig. 2B shows an example of the array, it can be understood that other desired arrangements may be selected.
The super-surface unit 43 is a regular quadrangle or a regular hexagon, the nano-structure 44 is a nano-columnar structure, and the nano-columnar structure comprises any one or more of a positive nano-columnar structure, a negative nano-columnar structure, a hollow nano-columnar structure, a negative hollow nano-columnar structure and a topological nano-columnar structure; the present embodiment provides a thermopile infrared sensor based on a superlens, in which the distribution of the surface nano-pillar structures of the superlens 6 is schematically shown in fig. 6A and 6B. The substrate 41 is made of silicon or germanium, and the nano-structure 44 is made of silicon or germanium. For example, the present embodiment is described by taking a positive nano-pillar as an example, the material of the nano-structure is selected to avoid absorption in the infrared band, and includes silicon and germanium, and the present embodiment is described by taking a silicon nano-structure as an example. It is understood that the material of the nanostructures 44 may be selected to meet other requirements of infrared transparency. The cross section of the nano-pillar structure may be one or a combination of a plurality of shapes selected from a circle, an ellipse, a quadrangle, a pentagon, a hexagon, and a topological shape, and this embodiment is described by taking a regular nano-pillar with a circular cross section as an example, see fig. 3A.
The geometric dimensions of the nano-structures 44 of the super-surface structure 42, including the height of the nano-pillars, the diameter of the cross-section, and the distance between the nano-pillars, can be selected according to the detection requirements. Wherein the height of the nano columnar structure is greater than or equal to 5 micrometers and less than or equal to 50 micrometers; the distance between adjacent nano-pillars must be greater than or equal to 0.35 micrometer and less than or equal to 5 micrometers; the minimum size (diameter, height and/or minimum spacing between two adjacent nano columnar structures and the like) of the nano columnar structures is greater than or equal to 0.05 micrometer; the maximum aspect ratio of the nano columnar structure, namely the ratio of the height of the nano columnar structure to the minimum diameter of the nano columnar structure in the super lens is less than or equal to 20. In the present embodiment, the heights of the nano-pillar structures at different positions are 11.8 micrometers, the distance between the centers of the adjacent nano-pillar structures is 3.04 micrometers, and the cross-sectional diameter of the nano-pillar is greater than or equal to 1 micrometer and less than or equal to 2.04 micrometers.
The cross section diameters of the nano columnar structures at different positions are partially the same or different from each other; the optical phase of the nanostructures 44 is related to the nanopillar cross-sectional diameter. In this embodiment, the cross-sectional diameter of the nanopillars is greater than or equal to 1 micron and less than or equal to 2.04 microns; the relationship between the nanopillar structure optical phase and cross-sectional diameter over the range of 8-12 microns of incident light wavelength is shown in FIG. 3B; the relationship between the nanopillar structure transmittance and cross-sectional diameter over the range of incident light wavelengths of 8-12 microns is shown in fig. 3C. It will be appreciated that the geometry and dimensions of the nano-pillar structures may be other choices that meet the detection requirements and processing conditions.
The side of the superlens 4, which is the same as the super-surface structure 42 and/or the side thereof, which is different from the super-surface structure 42, is plated with an infrared antireflection film 45, in this embodiment, the side of the substrate 41 of the superlens and the side of the super-surface structure 42 are both selected to be plated with the infrared antireflection film 45, the target wavelength range of the infrared antireflection film 45 is 8-12 micrometers or 5-15 micrometers, and the thickness of the infrared antireflection film 45 is 1.4-1.8 micrometers; specifically, the infrared antireflection film 45 includes Ge layers, ZnS layers and YF layers that alternate with each other3Layer of Ge layer and YF3The layer is not adjacent, infrared antireflection coating 45's outmost is the ZnS layer, the stratum basale generally is plane silicon or silica-based nanostructure, as the utility model discloses a preferred embodiment, the silica-based super lens antireflection coating of far infrared includes 6 layers except the stratum basale, does in proper order: ge layer, first ZnS layer, first YF3Layer, second ZnS layer, second YF3The thickness ranges of the Ge layer, the first ZnS layer, the first YF3 layer, the second ZnS layer, the second YF3 layer and the third ZnS layer are respectively 20-80nm, 600-1000nm, 200-400nm, 40-100nm, 200-400nm and 50-200nm, and the thickness of the far infrared silicon-based super-lens antireflection film except the substrate layer is more than or equal to 1110nm and less than or equal to 2180 nm. As a further preferred embodiment of the present invention, the Ge layer, the first ZnS layer, the first YF3Layer, the second ZnS layer, the second YF3Layer of the third ZnThe thicknesses of the S layer are respectively 50 nanometers, 800 nanometers, 300 nanometers, 70 nanometers, 300 nanometers and 125 nanometers. The infrared antireflection film 45 may be plated on the same side of the superlens 4 as the super-surface structure 42, or on a different side of the superlens 4 from the super-surface structure 42, or on both sides of the superlens 4, and the infrared antireflection film 45 may improve the collection efficiency of external infrared radiation; the infrared antireflection film 45 is selected according to a target waveband of the thermopile infrared sensor; optionally, according to different measurement environments of the thermopile infrared sensor, the working waveband of the infrared antireflection film 45 is 8-12 micrometers or 5-15 micrometers; the infrared sensor with the target wave band of 8-12 microns is mainly used for measuring the temperature of a human body, and the infrared sensor with the target wave band of 5-15 microns is mainly used for measuring the temperature in industry. In this embodiment, a thermopile infrared sensor with a target wavelength range of 8-12 μm is taken as an example for illustration, and a schematic diagram of the infrared antireflection film 45 with a wavelength range of 8-12 μm is shown in fig. 4.
The super lens 4 is circular, and the diameter of the super lens 4 is 2-7 mm.
The focal length of the super lens 4 is larger than the distance between the super lens 4 and the light sensing surface of the sensing unit 2.
The superlens 4 has a positive lens phase distribution. The superlens 4 is an infrared condenser lens, and optionally, the phase distribution of the mirror surface of the superlens 4 is positive lens phase distribution.
Wherein λ is the wavelength of light wave, r is the distance from each nano-columnar structure to the center of the substrate, and f is the focal length of the lens. The wavelength λ may be any wavelength in a target waveband of the thermopile infrared sensor, and optionally, the wavelength λ is greater than or equal to 8 micrometers and less than or equal to 12 micrometers, for example, this embodiment is described by taking a thermopile infrared sensor with a target waveband of 8-12 micrometers as an example, and the wavelength λ of the superlens is selected as a central wavelength of the target waveband of the infrared sensor, that is, λ ═ 10 micrometers.
The focal length of the super lens 4 is 1-10 mm, and the distance between the super lens 4 and the light sensing surface of the sensing unit 2 is 1-3 mm. The focal length f of the superlens is greater than or equal to the distance between the superlens and the sensing surface of the sensing unit, and optionally, the focal length f of the superlens 4 is greater than or equal to 1 mm and less than or equal to 10 mm; the size of the induction unit 2 is any size meeting the covering requirement of the pipe cap 2; the shape and size of the sensing surface of the sensing unit 2 are any size meeting the requirement of the sensing unit, and optionally, the shape of the sensing surface can be any one of a circle, an ellipse and a polygon. In this embodiment, a square sensing surface is taken as an example, and the side length of the sensing surface is 0.7 mm or 1.2 mm. In this embodiment, the focal length of the superlens 4 is selected such that, at an operating wavelength λ of 10 μm, light incident vertically is converged by the superlens 4, and then a focused light spot covers an circumscribed circle of the square sensing surface of the sensing unit 2. In this embodiment, for a square sensing surface with a side length of 0.7 mm, the focal length of the corresponding superlens is 1.7 mm, and at a working wavelength λ of 10 μm, a curve relationship between the mirror light phase distribution of the superlens 4 and the radius of the superlens is shown in fig. 5A; for a square with a side length of 1.2 mm, the sensing surface is 3.16 mm, and at an operating wavelength λ of 10 microns, a curve relationship between the mirror light phase distribution of the superlens 4 and the radius of the superlens 4 is shown in fig. 5B. It can be understood that in the thermopile infrared sensor, the shapes, sizes and intervals of the superlens 4, the sensing element 2 and the sensing surface can be other choices for meeting the purpose of collecting external infrared radiation; the mirror surface phase distribution of the superlens 4 can be other choices which meet the condensation requirements of the infrared band.
The utility model discloses a thermopile infrared sensor compares in traditional based on infrared filter, the effectual improvement of introducing of super lens 4 inductive element 2 is to external infrared radiation's detectivity, and then has improved thermopile infrared sensor's operating distance. In this embodiment, the ability of the superlens 4 and the infrared filter to collect infrared radiation at different incident angles is contrasted with fig. 7. Compared with the traditional optical focusing lens, the superlens 4 has the advantages of low absorption, small volume, light weight, easy integration and the like.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.
Claims (11)
1. A thermopile infrared sensor, comprising:
a base;
the induction unit is arranged on the base;
the pipe cap is covered on the induction unit and connected with the base, and a mounting hole corresponding to the induction unit is formed in the pipe cap;
the super lens is arranged in the mounting hole and comprises a substrate and super surface structures arranged on the surface of the substrate in an array mode, and the super surface structures are positioned on one side close to the sensing units;
the base, the cap and the superlens are packaged together to form a cavity for accommodating the sensing unit.
2. The thermopile infrared sensor of claim 1, wherein the super-surface structure comprises a plurality of super-surface units and nanostructures disposed at a central location of each of the super-surface units.
3. The thermopile infrared sensor according to claim 2, wherein the super-surface unit is a regular quadrangle or a regular hexagon, and the nano-structures are nano-columnar structures comprising any one or more of a positive nano-columnar structure, a negative nano-columnar structure, a hollow nano-columnar structure, and a topological nano-columnar structure.
4. The thermopile infrared sensor of claim 3, wherein the hollow nanopillar structure is a negative hollow nanopillar structure.
5. The thermopile infrared sensor of claim 2, wherein the substrate is made of silicon or germanium, and the nanostructure is made of silicon or germanium.
6. The thermopile infrared sensor according to any one of claims 1 to 5, wherein the superlens is coated with an infrared antireflection film having a target wavelength in the range of 5 to 15 μm on the same side as the super surface structure and/or on a side different from the super surface structure.
7. The thermopile infrared sensor of any one of claims 1-5, wherein the superlens has a positive lens phase profile.
8. The thermopile infrared sensor of any one of claims 1-5, wherein the superlens is circular and has a diameter of 2-7 millimeters.
9. The thermopile infrared sensor of any one of claims 1-5, wherein the superlens is disposed coaxially with the photosensitive surface of the sensing element.
10. The thermopile infrared sensor of any one of claims 1-5, wherein the focal length of the superlens is greater than the distance between the superlens and the photosensitive surface of the sensing element.
11. The thermopile infrared sensor of claim 10, wherein the superlens has a focal length of 1-10 mm and a distance between the superlens and the sensing element's photosensitive surface is 1-3 mm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113917574A (en) * | 2021-09-30 | 2022-01-11 | 深圳迈塔兰斯科技有限公司 | Stepped substrate super-surface and related design method, processing method and optical lens |
| CN114623960A (en) * | 2022-03-08 | 2022-06-14 | 深圳迈塔兰斯科技有限公司 | Pressure sensor, pressure analyzer and preparation method thereof |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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2020
- 2020-09-14 CN CN202022004708.8U patent/CN213902664U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113917574A (en) * | 2021-09-30 | 2022-01-11 | 深圳迈塔兰斯科技有限公司 | Stepped substrate super-surface and related design method, processing method and optical lens |
| CN114623960A (en) * | 2022-03-08 | 2022-06-14 | 深圳迈塔兰斯科技有限公司 | Pressure sensor, pressure analyzer and preparation method thereof |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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