CN210778607U - Multiband filtering sensor - Google Patents
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- CN210778607U CN210778607U CN201921515839.3U CN201921515839U CN210778607U CN 210778607 U CN210778607 U CN 210778607U CN 201921515839 U CN201921515839 U CN 201921515839U CN 210778607 U CN210778607 U CN 210778607U
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Abstract
The utility model discloses a multiband filtering sensor, which comprises a substrate circuit layer, wherein the substrate circuit layer is electrically connected with a photosensitive device layer; a light filtering structure layer is arranged on the photosensitive device layer, a transparent focusing structure layer is arranged on the light filtering structure layer, and the focusing structure layer is used for focusing light rays to the photosensitive device layer; the focusing structure layer comprises a plurality of silicon nitride nano-columns which are periodically arranged, and the nano-columns can generate 0-2 pi phase shift in a visible light range. The focusing structure layer of the utility model can obtain any required phase profile, and simultaneously keeps large transmission amplitude, thereby realizing constant focal length in the visible light range; the focusing structure layer utilizes the nano-columns with continuous diameter change to change the phase profile of incident light, thereby realizing the focusing function, having simple structure and convenient preparation, and being capable of realizing light condensation in a visible spectrum range.
Description
Technical Field
The utility model relates to an image sensing technical field specifically is a multiband optical filtering sensor.
Background
The traditional multiband filtering imaging system comprises a large and complex optical component for continuously relieving aberration and a plurality of image sensors for detecting different incident wavelengths, so that multiband filtering imaging can be completed, and the traditional multiband filtering imaging system is complex, bulky and inconvenient to use. Therefore, how to realize miniaturization and portability of the multiband filtering imaging system still remains a problem which needs to be solved urgently.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: in order to overcome the defects existing in the prior art, the utility model provides a multiband filtering sensor.
The technical scheme is as follows: in order to solve the above technical problem, the utility model discloses a multiband optical filtering sensor, including the basement circuit layer, the electricity of basement circuit layer is connected with the photosensitive device layer; a light filtering structure layer is arranged on the photosensitive device layer, a transparent focusing structure layer is arranged on the light filtering structure layer, and the focusing structure layer is used for focusing light rays to the photosensitive device layer; the focusing structure layer comprises a plurality of nano-pillars which are periodically arranged, and the nano-pillars can generate a phase shift of 0-2 pi in a visible light range.
The nano columns are arranged into a plurality of concentric rings, the diameters of the nano columns in the same ring are the same, and the nano columns between different rings are gradually increased from outside to inside.
Wherein, the thickness of the focusing structure layer is equal to the wavelength, and the period is equal to 0.7 times of the wavelength.
Wherein each silicon nitride nano-pillar is cylindrical or elliptic cylindrical.
Wherein the nano-column is a silicon nitride nano-column, a gold nano-column or a gallium nitride nano-column.
The light filtering structure layer is composed of a nanowire array, the nanowire array comprises at least four sub-arrays, each sub-array comprises a plurality of nanowires, and each sub-array corresponds to one photosensitive device of the photosensitive device layer.
Wherein, the nano columns in the same sub array have the same diameter, height and period, and the diameter periods of the nano wires in different sub arrays are different.
Wherein the photosensitive device layer comprises photodiodes, and a single photodiode constitutes one photosensitive device.
And a silicon dioxide layer is arranged between the flat layer and the focusing structure layer.
Has the advantages that: the utility model discloses following beneficial effect has:
1. the focusing structure layer can obtain any required phase profile while maintaining large transmission amplitude, thereby realizing constant focal length in visible light range (400-700 nm)
2. The silicon nitride nano-pillar structure can realize a high-quality surface lens effect, and realizes transmission efficiency of up to 90% and focusing efficiency of 40%, and the numerical aperture reaches 0.75.
3. The focusing structure layer has a simple structure, can replace the traditional complicated optical device, and realizes the focusing of all wavelengths in the visible spectrum range.
4. The focusing structure layer utilizes the nano-columns with continuous diameter change to change the phase profile of incident light, thereby realizing the focusing function, having simple structure and convenient preparation, and being capable of realizing light condensation in a visible spectrum range.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of a focusing structure layer;
fig. 3 is a top view of the filter structure layer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, a multiband optical filtering sensor of the present invention includes a substrate circuit layer 1, wherein a photosensor layer 2 is electrically connected to the substrate circuit layer 1; the light-sensitive device comprises a photosensitive device layer 2 and is characterized in that a light filtering structural layer 3 is arranged on the photosensitive device layer 2, a transparent focusing structural layer 6 is arranged on the light filtering structural layer 3, the focusing structural layer 6 is used for focusing light rays to the photosensitive device layer 2, the thickness of the focusing structural layer 6 is equal to the wavelength, and the period is equal to 0.7 times of the wavelength. The focusing structure layer 6 comprises a plurality of periodically arranged cylindrical nano-pillars 61, the nano-pillars 61 can generate a phase shift of 0-2 pi in a visible light range, the nano-pillars 61 are arranged into a plurality of concentric rings, the diameters of the nano-pillars 61 in the same ring are the same, and the nano-pillars 61 between different rings are gradually increased from outside to inside. A flat layer 4 is arranged between the light filtering structure layer 3 and the focusing structure layer 6, and a silicon dioxide layer 5 is arranged between the flat layer 4 and the focusing structure layer 6.
As shown in fig. 1 and 3, the filter structure layer 3 is composed of a nano-pillar array, the nano-pillar array includes at least four sub-arrays 31, each sub-array 31 includes a plurality of nano-pillars, and each sub-array 31 corresponds to one pixel point of the photosensitive device layer 2. The nano-pillars in the same sub-array 31 have the same diameter, height and period, and the nano-pillars in different sub-arrays 31 have different diameters, heights and periods. The photosensitive device layer 2 includes a plurality of photodiodes, and each photodiode constitutes one pixel.
Specifically, the base circuit layer 1 is a semiconductor material, and may be silicon or other semiconductor compound. The photosensitive device layer 2, the light filtering structure layer 3 and the focusing structure layer 6 are integrated on the silicon substrate circuit layer 1 through semiconductor processes such as thin film deposition, photoetching and etching, can be compatible with the existing CMOS (complementary metal oxide semiconductor) process of an image sensor, realizes integration of focusing, filtering and detecting, and is the core for realizing miniaturized imaging. The combination of the base circuit layer 1 and the photosensitive device layer 2 may be a CMOS sensor chip semi-finished wafer. The photosensitive device layer 2 is composed of a plurality of photodiodes, and absorbs and converts an optical signal into an electrical signal by using the photoelectric effect of silicon. Meanwhile, the photosensitive device layer 2 is composed of an array of pixels, and each pixel represents a photosensitive device, namely a photodiode.
Filter structural layer 3 comprises nanowire array, and each nanowire array includes a plurality of subarrays 31, and every subarray transmission is incited subarray light of a wavelength on the surface, and every subarray 31 can select the light of a wavelength to see through promptly, and the wavelength is based on the geometric parameters of the interior nano-column of subarray 31 simultaneously, the utility model discloses well filter structural layer 3 can select a plurality of wavelengths in the ultraviolet-visible light-infrared within range, and nanowire array and photosensitive device layer 2 are mutual correspondence simultaneously, and every subarray corresponds a photosensitive device in the photosensitive device layer 2. For example, as shown in fig. 3, a nanowire array includes 9 sub-arrays 31, each sub-array 31 can be transparent to a selected wavelength, and the photosensitive device of the photosensitive device layer 2 corresponding to the sub-array 31 can detect light with a corresponding wavelength, and in this case, a nanowire array can be transparent to 9 wavelengths, and the wavelength can be changed by setting the geometric parameters of the nano-pillars in each sub-array 31.
As shown in fig. 1 and 2, the focusing structure layer 6 of the present invention is a transparent low refractive index material, and has a large transmittance to the wavelength in the visible light range, and it can be transparent conductive oxide, organic polymer, silicon nitride, etc., the present invention provides a plurality of nano-pillars 61 with periodic arrangement, and the nano-pillars have the same period in the same ring. By changing the diameters of the silicon nitride nano-columns 51 in different rings, the phase shift of 0 to 2 pi can be generated for incident light in a visible light range, a required random phase profile can be obtained, meanwhile, a large transmission amplitude is kept, the corresponding nano-column diameter is designed according to the phase shift required by different positions in a lens surface, and therefore constant focal length can be realized in a specific waveband in the visible light range (400nm-700 nm). The utility model discloses well nano-column 61's shape is cylindrical, and silicon nitride nano-column's cycle p, diameter d and thickness t all influence the focusing effect. The period and the thickness can influence the transmission amplitude, different resonances can occur in different thicknesses and periods, wide resonance generated by resonance can result in strongly-changed transmission amplitude, when t is 1.2 lambda and p is 0.4 lambda (lambda is a design wavelength), the phase delay and the transmission amplitude are continuous for all simulated column diameters, the transmission amplitude has only small change, but the aspect ratio is large at the moment, and the manufacturing is not suitable; in ensuring the appropriate aspect ratio of manufacture, while maintaining the approximate transmission amplitude of the whole phase range, the preferred parameter t is 0.7 lambda with p, the utility model discloses well design wavelength can be 633nm, can realize required phase profile through the diameter that changes nanopillar 61, for realizing 0 to 2 pi phase shift, as an embodiment, the utility model discloses can adopt six different silicon nitride nanopillar diameters, 192nm,242nm, 292nm, 342nm, 392nm, 442nm respectively. The nano-pillars 61 with different diameters are arranged in concentric circles, and the diameters of the nano-pillars 61 are sequentially increased from the outside to the inside of the concentric circles. In another embodiment of the present application, the focusing structure layer is a gold nanorod or a gallium arsenide nanorod, wherein the gold nanorod utilizes metal plasmon resonance, thereby having higher transmission efficiency. The utility model provides a focus structure layer 6 simple structure can replace the complicated optical device of tradition, realizes the focus at all wavelengths in the visible spectrum range.
The flat layer 4 is further included between the filter structure layer 3 and the focusing structure layer 6, and is used for filling gaps between the nano-pillars of the filter structure layer 3. The flat layer 4 can protect the nano-pillars of the filter structure layer 3, and can provide a flat surface for subsequent processes. The planarization layer may be a polymer material, such as PMMA, and may be achieved using spin coating followed by drying. The flat layer can also be a silicon dioxide film, and the surface grinding process can be carried out to realize the flattening after a certain thickness is deposited. The silicon dioxide layer 5 is arranged between the flat layer 4 and the focusing structure layer 6, the adhesion of the flat layer 4 and the focusing structure layer 6 is poor, the adhesion of the focusing structure layer 6 can be improved by depositing the silicon dioxide layer 5, and on the other hand, after focusing is carried out by utilizing the silicon nitride nano-column, an image after focusing can be incident into the whole photosensitive device layer 2 by arranging the silicon dioxide layer 5 with a certain thickness, so that imaging is realized.
The utility model utilizes the filtering structure layer 3 with the nano-pillar structure to realize the filtering of various wavelengths, thereby improving the multiband filtering imaging effect and the miniaturization of multiband filtering detection; the silicon nitride nano-column is utilized to realize the focusing function of incident light, so that an optical lens with a complex structure can be replaced, and the focusing in a visible light range can be realized without generating aberration; meanwhile, the focusing structure layer 6, the filtering structure layer 3 and the photosensitive device layer 2 are integrated on the CMOS wafer, so that the multiband filtering imaging device can be miniaturized and portable.
The conventional optical element mainly relies on refraction to control light propagation, and the refraction relies on the accurate curvature of surface to a great extent to realize gradual phase accumulation, and the utility model discloses well silicon nitride nanometer post is a planar lens, and it does not rely on light propagation to accumulate the phase gradually, but produces discrete sudden change on the phase place of incident light to replace current complicated optical component through flat and compact mode. The utility model discloses in, also can adopt metal, high refractive index materials such as amorphous silicon or titanium oxide form plane lens, but metal material has obvious loss at optical frequency, titanium oxide can not be compatible with CMOS technology, and amorphous silicon absorbs visible light and near infrared spectroscopy's light, these high refractive index materials have local resonance to produce and because the phase discontinuity that spatial position leads to simultaneously, thereby the phenomenon of colour difference appears, this kind of colour difference performance is the blurring relevant with the wavelength in the image, thereby image need complicated surface structure design and can only image in narrow wavelength range based on the formation of image on surface. The silicon nitride nano-pillars have CMOS compatibility and lower visible light absorption, and the top and bottom interfaces of each nano-pillar have low reflectivity, so that the resonance of incident light can be reduced; meanwhile, the diameter of the nano-column is changed, so that continuous phase change can be realized, and focusing can be realized in a visible light range.
The utility model discloses a multiband optical filtering sensor still can be applied to imaging system, if be applied to multiband optical filtering imager, replaces the image sensor among the current spectrum imager.
The utility model discloses the following step preparation of accessible:
s1: preparing a semi-finished wafer of a CMOS sensing chip, which comprises a substrate circuit layer 1 and a photosensitive device layer 2
S2: preparing a nanowire array on the surface of the semi-finished wafer of the CMOS matched processing chip by utilizing photoetching and etching processes, wherein the nanowire array is positioned above the photosensitive device layer 2;
s3: depositing a flat layer 4 above the nano-pillar array, and grinding;
s4: depositing a silicon dioxide layer 5 on the planar layer 4;
s5: a focusing structure layer 6 is deposited on the silicon dioxide layer 5, and a plurality of nano-pillars 61 are formed by using photolithography and etching processes.
Claims (10)
1. A multiband filtering sensor, characterized by: the circuit comprises a substrate circuit layer (1), wherein the substrate circuit layer (1) is electrically connected with a photosensitive device layer (2); a light filtering structure layer (3) is arranged on the photosensitive device layer (2), a transparent focusing structure layer (6) is arranged on the light filtering structure layer (3), and the focusing structure layer (6) is used for focusing light rays to the photosensitive device layer (2); the focusing structure layer (6) comprises a plurality of nano-pillars (61) which are periodically arranged, and the plurality of nano-pillars (61) can generate a phase shift of 0-2 pi in a visible light range.
2. A multiband optical filter sensor according to claim 1, wherein: the nano columns (61) are arranged into a plurality of concentric rings, the diameters of the nano columns (61) in the same ring are the same, and the nano columns (61) between different rings are gradually increased from outside to inside.
3. A multiband optical filter sensor according to claim 1, wherein: the thickness of the focusing structure layer (6) is equal to the wavelength, and the period is equal to 0.7 times of the wavelength.
4. A multiband optical filter sensor according to claim 1, wherein: each nano-pillar (61) is cylindrical or elliptic cylindrical.
5. A multiband optical filter sensor according to any one of claims 1 to 4, wherein: the nano-column is a silicon nitride nano-column, a gold nano-column or a gallium nitride nano-column.
6. A multiband optical filter sensor according to claim 1, wherein: the light filtering structure layer (3) is composed of a nanowire array, the nanowire array comprises at least four sub-arrays (31), each sub-array (31) comprises a plurality of nanowires, and each sub-array (31) corresponds to one photosensitive device of the photosensitive device layer (2).
7. The multiband optical filter sensor of claim 6, wherein: the nano-pillars in the same sub-array (31) have the same diameter, height and period, and the diameter periods of the nano-wires in different sub-arrays (31) are different.
8. A multiband optical filter sensor according to claim 1, wherein: the photosensitive device layer (2) comprises photodiodes, and a single photodiode forms a photosensitive device.
9. A multiband optical filter sensor according to claim 1, wherein: and a flat layer (4) is arranged between the light filtering structure layer (3) and the focusing structure layer (6).
10. A multiband optical filter sensor according to claim 9, wherein: and a silicon dioxide layer (5) is arranged between the flat layer (4) and the focusing structure layer (6).
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| CN201921515839.3U CN210778607U (en) | 2019-09-12 | 2019-09-12 | Multiband filtering sensor |
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| CN201921515839.3U CN210778607U (en) | 2019-09-12 | 2019-09-12 | Multiband filtering sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491893A (en) * | 2019-09-12 | 2019-11-22 | 江苏集萃智能传感技术研究所有限公司 | A kind of multiband light filtering sensor and preparation method thereof |
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2019
- 2019-09-12 CN CN201921515839.3U patent/CN210778607U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491893A (en) * | 2019-09-12 | 2019-11-22 | 江苏集萃智能传感技术研究所有限公司 | A kind of multiband light filtering sensor and preparation method thereof |
| CN110491893B (en) * | 2019-09-12 | 2024-08-20 | 江苏集萃智能传感技术研究所有限公司 | Multi-band filter light sensor and preparation method thereof |
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