CN106629578B - Infrared detector and its manufacturing method with micro-bridge structure - Google Patents
Infrared detector and its manufacturing method with micro-bridge structure Download PDFInfo
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- CN106629578B CN106629578B CN201710080817.8A CN201710080817A CN106629578B CN 106629578 B CN106629578 B CN 106629578B CN 201710080817 A CN201710080817 A CN 201710080817A CN 106629578 B CN106629578 B CN 106629578B
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Micromachines (AREA)
Abstract
A kind of infrared detector and its manufacturing method with micro-bridge structure, the infrared detector includes: substrate, is formed with metal interconnecting layer in the substrate surface；Part is suspended on the patterned micro-bridge structure above the substrate, and the micro-bridge structure includes bridge leg and bridge, and the bridge leg is electrically connected with the metal interconnecting layer, and the bridge is hanging and is upturned；Part is suspended on the patterned infrared sensitive layer above micro-bridge structure, and the infrared sensitive layer is electrically connected with the bridge of the micro-bridge structure, by the supporting bridge.The yield of the infrared detector improves, and has higher performance.
Description
Technical field
The present invention relates to infrared detector technical field more particularly to a kind of infrared detector with micro-bridge structure and its
Manufacturing method.
Background technique
MEMS (MEMS) is a kind of technology for realizing small integrated device or system.It uses integrated circuit
Or the proprietary technique for manufacturing batch of MEMS is manufactured, device or system dimension are differed at several microns to several millimeters.These devices (or
System) micro-scale structures can be sensed, control and drive, and effect is generated on a macroscopic scale.Last decade MEMS product
The various aspects for having been widely used daily life, accelerometer, pressure sensor including safe automobile air bag, intelligence
Micro-microphone, gyroscope, inkjet print head and the infrared detector of non-brake method etc. on energy electronic product.MEMS product is general
Include IC processing circuit and MEMS structure two parts.Since MEMS technology is according to the difference of product, micro fabrication difference is very big,
It is poor with the IC chip processing compatibility of standard, so early stage is difficult to realize always scale integrated production.
Currently, infrared detector is usually on the basis ROIC (readout circuit chip) that the CMOS technology using standard produces
On integrated MEMS structure again, obtain cavity structure using releasing sacrificial layer, utilize sensitive material (amorphous silicon and vanadium oxide) perception
It absorbs infrared temperature change and is converted to electric signal, the function of infrared detection is realized with this.Current infrared detector is main
Developing direction is to reduce pixel structure size and increase array sizes, improves the image resolution ratio of detector, expands infrared acquisition
The application range of device, this makes the level of MEMS manufacturing process have become the principal element of limit product performance.Small pixel structure
The stress that can reduce film mismatches and enhances detector sensitivity and resolution ratio；In addition, for identical array scale,
Small pixel structure means smaller detector and Lens, so as to reduce the weight and ruler of thermal infrared imager system
It is very little, increase the portability of thermal infrared imager.
On reducing infrared detector pixel dimensional directions, after small to 17 μm -15 μm of pixel, main design starts to examine
Consider the MEMS structure of multilayer.One of thinking is to be placed on centre at one layer for micro-bridge structure is individually designed, can be increased so most
The effective absorbing area of upper layer infrared absorption layer.Due to two layers through-hole in the infrared detector technical process of this double sacrificial layers
Structure causes the infrared absorption layer surface texture of top layer complicated, is easy to cause upper and lower level to connect in through hole after sacrificial layer release
Touching finally results in the failure of microbridge thermal insulation, reduces yield.
Therefore, existing infrared detector structure and manufacture craft need to be further improved.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of infrared detector with micro-bridge structure and its manufacturers
Method.
To solve the above-mentioned problems, the present invention provides a kind of infrared detectors with micro-bridge structure, comprising: substrate,
Metal interconnecting layer is formed in the substrate surface；Part is suspended on the patterned micro-bridge structure above the substrate, described
Micro-bridge structure includes bridge leg and bridge, and the bridge leg is electrically connected with the metal interconnecting layer, and the bridge is hanging and is upturned；
Part is suspended on the patterned infrared sensitive layer above micro-bridge structure, and the bridge of the infrared sensitive layer and the micro-bridge structure
Beam electrical connection, by the supporting bridge.
Optionally, metallic reflector is also formed in the substrate surface, the bridge is suspended on the metallic reflector
Top.
Optionally, the micro-bridge structure include the first stressor layers, the second stressor layers and be located at first stressor layers with
Electrode layer between second stressor layers, the electrode layer are electrically connected with the metal interconnecting layer, infrared sensitive layer.
Optionally, the micro-bridge structure further includes being electrically connected place and infrared-sensitive positioned at electrode layer and metal interconnecting layer
Layer with the electrode anchor point for being electrically connected place of bridge, the part electrode anchors point is between electrode layer and metal interconnecting layer, part
The electrode anchors point is between electrode layer and the first stressor layers.
Optionally, the material of first stressor layers is one or more of silica, silicon nitride or silicon oxynitride；Institute
The material for stating the second stressor layers is one or more of silica, silicon nitride or silicon oxynitride.
Optionally, the infrared sensitive layer include lower layer's protective layer, upper layer protective layer and be located at lower layer's protective layer,
Infrared sensitive thin film and electric connection layer between the protective layer of upper layer, the electric connection layer connect the infrared sensitive thin film and microbridge
Structure.
Optionally, the material of the infrared sensitive thin film is amorphous silicon or vanadium oxide；The material of lower layer's protective layer is
One or more of silica, silicon nitride or silicon oxynitride；The material of the upper layer protective layer is silica, silicon nitride or nitrogen
One or more of silica.
Optionally, the plan view shape of the bridge of the micro-bridge structure is S-shaped.
Also provide a kind of manufacturing method of infrared detector with micro-bridge structure, comprising: provide substrate, the substrate table
Metal interconnecting layer is formed in face；The first sacrificial layer is formed in the substrate surface, has in first sacrificial layer and is located at institute
State the first through hole on metal interconnecting layer surface；It is formed graphically in the first through hole inner wall surface and the first sacrificial layer surface
Micro-bridge structure, the micro-bridge structure includes bridge leg and bridge, and the bridge leg is located in first through hole, with the metal interconnecting layer
Electrical connection, the bridge are located at the first sacrificial layer surface, connect with the bridge leg, and the bridge has warping stress；Form the
Two sacrificial layers, second sacrificial layer cover the first sacrificial layer and micro-bridge structure, and have the positioned at the bridge surface
Two through-holes；The figure being located above micro-bridge structure is formed on second through-hole wall surface and second sacrificial layer surface
The infrared sensitive layer of change, the infrared sensitive layer are electrically connected with the bridge of the micro-bridge structure；Remove first sacrificial layer and
Second sacrificial layer, so that the bridge is upturned under itself stress, to raise the infrared sensitive layer.
Optionally, the material of first sacrificial layer and the second sacrificial layer is amorphous silicon.
Optionally, the patterned micro-bridge structure includes the first stressor layers, electrode layer and the second stressor layers；The figure
The forming method of the micro-bridge structure of change includes: to form first in the first through hole inner wall surface and the first sacrificial layer surface to answer
The dead-wood bed of material；The first stress material layer is etched along the first through hole, exposes the metal interconnecting layer of first through hole bottom
Surface；Form the electrode material layer for covering the first stress material layer and metal interconnecting layer；It is formed and covers the electrode material
Second stress material layer of layer；The second stress material layer, electrode material layer and the first stress material layer are etched, figure is formed
The micro-bridge structure of change.
Optionally, further includes: before forming the electrode material layer, form electricity in the first stress material layer surface
Pole anchor point, the part electrode anchors point is located in first through hole to be electrically connected with metal interconnecting layer, and the part electrode anchors point is located at
Above first sacrificial layer.
Optionally, the infrared sensitive layer includes: lower layer's protective layer, upper layer protective layer and protects positioned at the lower layer
Graphical infrared sensitive thin film and electric connection layer between layer, upper layer protective layer, the electric connection layer connection are described graphical red
Outer sensitive thin film and micro-bridge structure；The forming method of the patterned infrared sensitive layer includes: in second through-hole wall
Surface and second sacrificial layer surface sequentially form lower layer's protected material bed of material, positioned at lower layer's protection materials layer surface
Patterned infrared sensitive thin film；Along infrared sensitive thin film, lower layer's protected material bed of material and second described in second via etch
Stressor layers expose partial electrode layer surface；Form the electrical connection material layer of connection infrared sensitive thin film and electrode layer；Formation is covered
Cover the upper layer protected material bed of material of the electrical connection material layer and infrared sensitive thin film；It etches the upper layer protected material bed of material, be electrically connected
Material layer, infrared sensitive thin film and lower layer's protected material bed of material are connect, the infrared sensitive layer is formed.
Optionally, first sacrificial layer and the second sacrificial layer are removed using xenon difluoride gas etching.
In the manufacturing method of infrared detector with micro-bridge structure of the invention, being formed in substrate surface has first to lead to
First sacrificial layer in hole, then the micro-bridge structure with warping stress is formed on the first sacrificial layer, so that micro-bridge structure and substrate
Metal interconnecting layer connection, then the micro-bridge structure surface formed have the second through-hole the second sacrificial layer, second sacrifice
Infrared sensitive layer is formed on layer, then takes out first sacrificial layer and the second sacrificial layer, cavity is formed, so that micro-bridge structure exists
Warpage under stress, raises infrared sensitive layer, to improve the thickness of hole cavity, also, avoids the hanging of infrared sensitive layer
Part is contacted with micro-bridge structure, improves the performance and yield of infrared detector.Also, it, can in the case where cavity thickness is certain
To reduce the thickness of the first sacrificial layer and the second sacrificial layer, to reduce the deep width of the first through hole in sacrificial layer, the second through-hole
Than reducing the difficulty of each material layer depositions, and the size of the first through hole and the second through-hole can be reduced, further decreasing
The size of infrared detector.
Infrared detector with micro-bridge structure of the invention has the micro-bridge structure of a warpage, raises infrared sensitive layer,
So that the cavity thickness in infrared detector is larger, be conducive to the performance for improving infrared detector, also, avoid infrared quick
The overhanging portion of sense layer is contacted with micro-bridge structure, improves the yield of infrared detector.
Detailed description of the invention
Fig. 1 is that the process of the manufacturing method of the infrared detector with micro-bridge structure of the embodiment of the invention is shown
It is intended to；
Fig. 2~Figure 16 is the manufacturing process of the infrared detector with micro-bridge structure of the embodiment of the invention
Structural schematic diagram；
Figure 17 is the plan view shape schematic diagram of the micro-bridge structure of the embodiment of the invention.
Specific embodiment
With reference to the accompanying drawing to the specific of the infrared detector provided by the invention with micro-bridge structure and its manufacturing method
Embodiment elaborates.
Referring to FIG. 1, the manufacturing method of the infrared detector with micro-bridge structure for the embodiment of the invention
Process.
The manufacturing method of the infrared detector includes:
Step S101: substrate is provided, is formed with metal interconnecting layer in the substrate surface.
Step S102: the first sacrificial layer is formed in the substrate surface, has in first sacrificial layer and is located at the gold
Belong to the first through hole of interconnection layer surfaces.
Step S103: patterned microbridge knot is formed in the first through hole inner wall surface and the first sacrificial layer surface
Structure, the micro-bridge structure include bridge leg and bridge, and the bridge leg is located in first through hole, is electrically connected with the metal interconnecting layer,
The bridge is located at the first sacrificial layer surface, connect with the bridge leg, and the bridge has warping stress.
Step S104: the second sacrificial layer is formed, second sacrificial layer covers the first sacrificial layer and micro-bridge structure, and has
There is the second through-hole positioned at the bridge surface.
Step S105: it is formed on second through-hole wall surface and second sacrificial layer surface and is located at micro-bridge structure
The patterned infrared sensitive layer of top, the infrared sensitive layer are electrically connected with the bridge of the micro-bridge structure.
Step S106: removal first sacrificial layer and the second sacrificial layer, so that the bridge is under itself stress
It is upturned, to raise the infrared sensitive layer.
Fig. 2~16 are please referred to, are the manufacture of the infrared detector in the embodiment of the invention, with micro-bridge structure
Structural schematic diagram in the process.
Referring to FIG. 2, providing substrate 100, metal interconnecting layer 131 is formed in 100 surface of substrate.
In a specific embodiment, the substrate 100 including the first subbase bottom 110 and is located at first subbase bottom
The second subbase bottom 120 on 110 surfaces is formed with reading circuit in first subbase bottom 110；In second subbase bottom 120
It is formed with the interconnection structure of connection reading circuit, including metal layer 121, tungsten through-hole 122, pad 123, and is located at the second subbase
The metal interconnecting layer 131 on 120 surface of bottom.
Metal interconnecting layer 131 at two are shown in Fig. 2, it is subsequent to form two on the metal interconnecting layer 131 at two respectively
Micro-bridge structure.In other specific embodiments, be formed with 131 array of metal interconnecting layer in 100 surface of substrate, it is subsequent
Micro-bridge structure array is formed in substrate 100.
Metallic reflector 132 is also formed in 131 same layer of metal interconnecting layer, and the metallic reflector 132 is to specific
The reflectivity of the infrared light of wavelength (such as 8 μm~14 μm) is 90% or more.It is described in the specific embodiment of the present invention
Metallic reflector 132 can be Al, Ti or Ta, be formed using physical gas-phase deposition, other interconnection metals be mutually linked as Ti or
TiN。
The substrate 100 further includes the protective layer 130 for being deposited on second subbase bottom, 120 surface, the protective layer 130
Material be silicon oxide or silicon nitride, the protective layer 130 can be formed using chemical vapor deposition process, for example, by using it is equal from
Daughter enhances the method preparation of chemical vapor deposition (PECVD), and realizes the flat of surface by CMP process, and
So that the thickness of the protective layer 130 is thin as far as possible.The main purpose of the protective layer 130 is to realize the table of metallic reflector 132
Face planarization, is easy to the lithography and etching of subsequent MEMS (MEMS) structure.In a specific embodiment party of the invention
In formula, the thickness of the protective layer 130 can be
Referring to FIG. 3, forming the first sacrificial layer 200 on 100 surface of substrate, have in first sacrificial layer 200
First through hole 201 positioned at 131 surface of metal interconnecting layer.
The material of first sacrificial layer 200 can be the amorphous silicon that amorphous silicon either adulterates.Plasma can be used
Enhance the first sacrificial layer 200 described in chemical vapor deposition (PECVD) process deposits.The material of first sacrificial layer 200 and its
The etching selection ratios with higher such as his dielectric layer material, such as silica, silicon nitride or silicon oxynitride.
After depositing first sacrificial layer 200, using photoetching, etching method to first sacrificial layer 200 into
Row etching, forms first through hole 201, and the first through hole 201 is located on metal interconnecting layer 131.Dry etching can be used
Technique performs etching first sacrificial layer 200, to form the first through hole 201.
It is subsequent, patterned micro-bridge structure, institute are formed in the first through hole inner wall surface and the first sacrificial layer surface
Stating micro-bridge structure includes bridge leg and bridge, and the bridge leg is located in first through hole, is electrically connected with the metal interconnecting layer, the bridge
Beam is located at the first sacrificial layer surface, connect with the bridge leg, and the bridge has warping stress.
Referring to FIG. 4, forming the first stress material in 201 inner wall of first through hole and 200 surface of the first sacrificial layer
Layer 202.
The material of the first stress material layer 202 can be one of silica, silicon nitride or silicon oxynitride or several
Kind, it can be single or multi-layer structure.It is formed using plasma reinforced chemical vapour deposition technique, by adjusting the deposition work
Each technological parameter in skill adjusts the stress of the first stress material layer 202.
Referring to FIG. 5, etching the first stress material layer 202 along the first through hole 201, first through hole is exposed
131 surface of metal interconnecting layer of 201 bottoms.
Continue to etch the first stress material layer 202 and protective layer 130 of 201 bottom of first through hole, with the gold
Belong to interconnection layer 131 and be used as stop-layer, forms the first sub-through hole 203, expose metal interconnecting layer 131, it is micro- convenient for what is be subsequently formed
Bridge structure is electrically connected with the metal interconnecting layer 131 formation.
Referring to FIG. 6, forming electrode anchor point layer 204, the electrode anchor point layer on 202 surface of the first stress material layer
204 fill full first sub-through hole 203 (please referring to Fig. 5), are electrically connected with the metal interconnecting layer 131.
The material of the electrode anchor point layer 204 is Ti or TiN, can form the electrode using physical gas-phase deposition
Anchor point layer 204.
Referring to FIG. 7, etching the electrode anchor point layer 204, electrode anchor point 204a and electrode anchor point 204b is formed.Electrode anchors
Point 204a is located at the first sub-through hole 203 of 201 side wall of first through hole and filling；Electrode anchor point 204b is located at the first sacrificial layer 200
On.
Referring to FIG. 8, forming the electrode material for covering described electrode anchor point 204a, 204b and the first stress material layer 202
Layer 205.The material of the electrode material layer 205 is Ti or TiN, is formed using physical gas-phase deposition, for example, by using sputtering
Technique.In view of the necessary thermal conductivity of micro-bridge structure as infrared detector is very low, the thickness of the electrode material layer 205 will be use up
Measure it is thin, to reduce the thermal conductivity of the electrode material layer 205, in the specific embodiment of the present invention, the electrode material
205 thickness of the bed of material can be
It, can also be directly in the 202 surface shape of the first stress material layer in another embodiment of the present invention
It at electrode material layer 205, is directly electrically connected by the electrode material layer 205 with metal interconnecting layer 131, described in being formed
Electrode anchor point 204a, 204b.
Referring to FIG. 9, forming the second stress material layer on 205 surface of electrode material layer, and etch described second
Stress material layer, electrode material layer 205 and the first stress material layer 202, form patterned micro-bridge structure.
According to designed micro-bridge structure figure, Patterned masking layer is formed in the second stress material layer surface, is adopted
The second stress material layer, electrode material layer 205 and the first stress material layer 202 are etched with dry etch process, is formed micro-
Bridge structure, the micro-bridge structure are answered including the second stressor layers 206a, electrode layer 205a, anchor point layer 204a and 204b and first
Power layer 202a.In other specific embodiments of the invention, the micro-bridge structure can also only include second stressor layers
206a, electrode layer 205a and the first stressor layers 202a.
The micro-bridge structure includes bridge leg and bridge structure, and the bridge leg is located in first through hole 201, mutual with the metal
Even layer 131 is electrically connected, and the bridge is located at 200 surface of the first sacrificial layer, connect with the bridge leg, the bridge is answered with warpage
Power.
The material of the second stressor layers 206a can one or more of for silica, silicon nitride or silicon oxynitride,
It can be single or multi-layer structure.It is formed using plasma reinforced chemical vapour deposition technique, it can be by adjusting the deposition
Each technological parameter in technique adjusts the stress in the second stressor layers 206a.
In the first stressor layers 202a and the second stressor layers 206a answer force-fitting make the micro-bridge structure have stick up
Transverse stress, the warping stress in the bridge vacantly without by other materials layer adhesive attraction when, the bridge can be made upward
Warpage.
Referring to FIG. 10, forming the second sacrificial layer 300 of covering the first sacrificial layer 200 and micro-bridge structure.
The material of second sacrificial layer 300 can be the amorphous silicon that amorphous silicon either adulterates.Plasma can be used
Enhance the second sacrificial layer 300 described in chemical vapor deposition (PECVD) process deposits.The material of second sacrificial layer 300 and its
The etching selection ratios with higher such as his dielectric layer material, such as silica, silicon nitride or silicon oxynitride.
Due to the presence of the first through hole 201, the deposition speed of the second sacrificial layer 300 in the first through hole 201
Rate causes second sacrificial layer 300 to there is recess above first through hole 201 lower than the deposition rate at other positions, and
The thickness of the second sacrificial layer 300 in first through hole 201 is less than the thickness of the second sacrificial layer 300 at other positions.
Figure 11 is please referred to, second sacrificial layer 300 is etched, is formed in second sacrificial layer 300 and is located at microbridge knot
The second through-hole 301 above structure bridge；Again 301 inner wall surface of the second through-hole and 300 surface of the second sacrificial layer successively
Form lower layer's protected material bed of material 302, positioned at the patterned infrared sensitive thin film 303 of lower layer's protection materials layer surface.
Second sacrificial layer 300 is performed etching using the method for photoetching, etching, forms the second through-hole 301, described the
Two through-holes 301 are located above bridge, are preferably located above the electrode anchor point 204b.It can be using dry etch process to institute
It states the second sacrificial layer 300 to perform etching, to form second through-hole 301.
The material of lower layer's protected material bed of material 302 can be one of silica, silicon nitride or silicon oxynitride or several
Kind, it can be single or multi-layer structure.Lower layer's protected material can be formed using plasma reinforced chemical vapour deposition technique
The bed of material 302, in order to improve infrared absorption filter, the thickness of lower layer's protected material bed of material 302 is thin as far as possible, and by adjusting deposition
Technological parameter in technique avoids that warpage occurs, influences red so that 302 stress of lower layer's protected material bed of material are smaller or do not have
Absorption of the outer sensitive thin film 303 to infrared light.
The material of the infrared sensitive thin film 303 is the thin-film material with high temperature coefficient of resistance (TCR), such as amorphous
Silicon or vanadium oxide etc..In the specific embodiment of the present invention, the material of the infrared sensitive thin film 303 is the non-of doping
Crystal silicon is mainly formed using plasma reinforced chemical vapour deposition technique, and amorphous silicon, which is doped, can reduce resistivity and make an uproar
Sound；In another embodiment of the present invention, the material of the infrared sensitive thin film 303 is vanadium oxide, can use object
Physical vapor deposition technique is formed, for example, by using sputtering technology.
Figure 12 is please referred to, the infrared sensitive thin film 303 is patterned, graphical infrared sensitive thin film is formed
303a。
Figure 13 is please referred to, etches the graphical infrared sensitive thin film 303a, lower layer's protected material along second through-hole 301
The bed of material 302 and the second stressor layers 206a form the second sub-through hole 304 for being located at 301 lower section of the second through-hole, expose partial electrode
The surface layer 205a.
In a specific embodiment of the invention, second through-hole 301 is located above the electrode anchor point 204b, because
This, the metal layer thickness of 301 bottom of the second through-hole is larger, to reduce the etching for etching second sub-through hole 304
The difficulty of terminal avoids cutting through metal layer.
Figure 14 is please referred to, the electrical connection material layer 305 of connection infrared sensitive thin film 303a and electrode layer 205a is formed.It is described
The electrode layer 205a of second through-hole, 301 lower section is connect with the electrical connection material layer 305, and the electrical connection material layer 305 is filled
Full second sub-through hole 304.The material of electrical connection material layer 305 can be Ti or TiN, can use physical vapour deposition (PVD) work
Skill is formed after the electrical connection material layer 305 of covering infrared sensitive thin film 303a and lower layer's protected material bed of material 302, to the electricity
Connecting material layer 305 is patterned.
Figure 15 is please referred to, the upper layer protected material of the covering electrical connection material layer 305 and infrared sensitive thin film 303a is formed
The bed of material；Etch the upper layer protected material bed of material, electrical connection material layer 305, infrared sensitive thin film 303a and lower layer's protected material bed of material
302, form the infrared sensitive layer.The infrared sensitive layer includes: lower layer protective layer 302a, upper layer protective layer 306a and position
Graphical infrared sensitive thin film 303a and electric connection layer between lower layer's protective layer 302a, upper layer protective layer 306a
305a, the electric connection layer 305a connection graphical infrared sensitive thin film 303a and micro-bridge structure.
The material of the upper layer protective layer 306a can one or more of for silica, silicon nitride or silicon oxynitride,
It can be single or multi-layer structure.The upper layer protection materials can be formed using plasma reinforced chemical vapour deposition technique
Layer, in order to improve infrared absorption filter, the thickness of the upper layer protected material bed of material is thin as far as possible, and by adjusting in depositing operation
Technological parameter avoids that warpage occurs, influences infrared sensitive thin film so that the upper layer protection materials ply stress is smaller or does not have
Absorption of the 303a to infrared light.
It further, further include that etching second sacrificial layer 300, first is sacrificed after forming the infrared sensitive layer
In layer 200 and substrate 100, the third through-hole 401 for exposing 123 surface of pad is formed.
Figure 16 is please referred to, first sacrificial layer 200 and the second sacrificial layer 300 are removed, so that the bridge itself is being answered
It is upturned under power effect, to raise the infrared sensitive layer.
First sacrificial layer 200 and the second sacrificial layer 300 are removed, is formed between micro-bridge structure 210 and substrate 100
The first cavity, and the second cavity between infrared sensitive layer 310 and micro-bridge structure 210.The micro-bridge structure 210 with
For the first cavity between substrate 100 as chamber is thermally isolated, the micro-bridge structure 210 plays conductive heat insulating function；It is described infrared quick
The second cavity between layer 310 and micro-bridge structure 210 is felt as infrared absorption resonant cavity, improves the efficiency of infrared absorption, it is described
Infrared sensitive layer 310 is used as infrared absorption layer.Infrared sensitive thin film 303a in infrared sensitive layer 310 absorbs infrared light, will be red
External signal is converted to electric signal, passes to micro-bridge structure 210 by electric connection layer 305a, passes through the electrode in micro-bridge structure 210
Layer 205a passes to the metal interconnecting layer 131 in substrate 100, is read by the reading circuit in substrate 100, to realize infrared letter
Number detection.
It can be sacrificial using selective etch technique, such as dry etch process removal first sacrificial layer 200 and second
Domestic animal layer 300 removes first sacrificial layer using xenon difluoride gas etching in the specific embodiment of the present invention
200 and second sacrificial layer 300.The material and the first stressor layers 202a of first sacrificial layer 200 and the second sacrificial layer 300,
Two stressor layers 206a, lower layer protective layer 302a are compared with upper layer protective layer 306a, therefore etching ratio with higher is etching
In the process, the first stressor layers 202a, the second stressor layers 206a can play protection to the metal layer in micro-bridge structure 210 and make
With same lower layer's protective layer 302a and upper layer protective layer 306a can also play the metal layer in infrared sensitive layer 310
Protective effect.
Due to having warping stress in the first stressor layers 202a and the second stressor layers 206a, the first sacrificial layer is being discharged
200 and second after sacrificial layer 300, since the bridge of the micro-bridge structure 210 is hanging, in the first stressor layers 202a and
Under the stress of two stressor layers 206a, warpage occurs for the bridge of the micro-bridge structure 210, so that one end of the bridge is lifted
Height, so that the infrared sensitive layer 310 connecting with the bridge is elevated, to improve the first cavity and the second cavity
Thickness.In the case where the first cavity of needs and certain the second cavity thickness, etching reduces the first sacrificial layer for needing to deposit
With the thickness of the second sacrificial layer, to reduce the first through hole that is formed in the first sacrificial layer and be formed in the second sacrificial layer
The depth-to-width ratio of second through-hole and recess, to reduce the film for filling the first through hole, the second through-hole and recess
Difficulty is deposited, and then the size of the first through hole, the second through-hole can be further decreased, realizes smaller size of infrared acquisition
Device.
The micro-bridge structure can be adjusted by adjusting the stress of the first stressor layers 202a and the second stressor layers 206a
210 warpage degree.In another specific embodiment, institute can also be adjusted by adjusting the graphic structure of micro-bridge structure 210
The internal stress of micro-bridge structure 210 is stated, so as to adjust warpage degree.Figure 17 is please referred to, is the microbridge knot in a specific embodiment
The schematic top plan view of structure 210, the bridge 502 are located at the bridge leg 501 of micro-bridge structure and the connection of micro-bridge structure infrared sensitive layer
Between place 503, the plan view shape of the bridge 502 is S type so that have biggish stress in bridge 502, and stress be not easy by
Release.Change the shape of the bridge 502, the stress in the bridge 502 can also be made to change, to change the bridge
Hogging of beam degree.Such design is readily available all qualified micro-bridge structure of warpage degree, electrical property, mechanical performance, drop
The low difficulty of process exploitation, also improves the compatibility of detector and CMOS technology.
Since the infrared sensitive layer 310 is elevated, second between the infrared sensitive layer 310 and micro-bridge structure pair is empty
Chamber thickness increases, caused by due to surface indentation of second sacrificial layer 200 above first through hole under infrared sensitive layer 310
The distance between heavy part and micro-bridge structure 210 are improved, and the micro-bridge structure of infrared sensitive layer 310 and first through hole out is avoided
A possibility that 210 contact, to ensure that thermal insulation between the two, greatly improve the yield of release process.
A specific embodiment of the invention also provides a kind of infrared detector with micro-bridge structure.
Figure 16 is please referred to, for the structural schematic diagram of the infrared detector with micro-bridge structure.
The infrared detector includes: substrate 100, is formed with metal interconnecting layer 131 in 100 surface of substrate；Part
It is suspended on the patterned micro-bridge structure 210 of 100 top of substrate, the micro-bridge structure 210 includes bridge leg and bridge, described
Bridge leg is electrically connected with the metal interconnecting layer 131, and the bridge is hanging and is upturned；Part is suspended on micro-bridge structure 210
The patterned infrared sensitive layer 310 of side, and the infrared sensitive layer 310 is electrically connected with the bridge of the micro-bridge structure 210, by
The supporting bridge.
In a specific embodiment, the substrate 100 including the first subbase bottom 110 and is located at first subbase bottom
The second subbase bottom 120 on 110 surfaces is formed with reading circuit in first subbase bottom 110；In second subbase bottom 120
It is formed with the interconnection structure of connection reading circuit, including metal layer 121, tungsten through-hole 122, pad 123, and is located at the second subbase
The metal interconnecting layer 131 on 120 surface of bottom.Also there is the third through-hole 401 for exposing 123 surface of pad in the substrate 100.
It is also formed with metallic reflector 132 in 100 surface of substrate, the bridge is suspended on the metallic reflector
132 tops.The metallic reflector 132 is to the reflectivity of the infrared light of specific wavelength (such as 8 μm~14 μm) 90% or more.?
In the specific embodiment of the present invention, the metallic reflector 132 can be Al, Ti or Ta, using physical vapour deposition (PVD)
Technique is formed, other interconnection metals are mutually linked as Ti or TiN.The substrate 100 further includes being deposited on second subbase bottom, 120 table
The protective layer 130 in face, the material of the protective layer 130 are silicon oxide or silicon nitride.
The micro-bridge structure 210 is including the first stressor layers 202a, the second stressor layers 206a and is located at first stress
It is electrode layer 205a, the electrode layer 205a and the metal interconnecting layer 131 between layer 202a and the second stressor layers 206a, infrared quick
Feel layer 310 to be electrically connected.The material of the electrode layer 205a can be Ti or TiN.The thickness of the electrode layer 205a is thin as far as possible,
To reduce the thermal conductivity of the electrode layer 205a, in the specific embodiment of the present invention, the electrode layer 205a thickness
Can be
In this specific embodiment, further, the micro-bridge structure 210 further includes being located at electrode layer 205a and metal
At the electrical connection of interconnection layer 131 and the electrode anchor point for being electrically connected place of infrared sensitive layer 310 and bridge, the part electrode anchors
Point 204a between electrode layer 205a and metal interconnecting layer 131, the part electrode anchor point 204b be located at electrode layer 205a with
Between first stressor layers 202a.The material of electrode the anchor point 204a and 204b are Ti or TiN.
The material of the first stressor layers 202a is one of silica, silicon nitride or silicon oxynitride or a variety of, can be with
For single or multi-layer structure；The material of the second stressor layers 206a be one of silica, silicon nitride or silicon oxynitride or
It is a variety of, it can be single or multi-layer structure.The first stressor layers 202a and the second stressor layers 206a has warping stress, makes institute
The bridge for stating micro-bridge structure 210 keeps warpage, to raise the infrared sensitive layer 310, so that the infrared sensitive layer 310 is hanging
The distance between part and micro-bridge structure 210 increase, and avoid the infrared sensitive layer 310 from contacting with micro-bridge structure 210, lead to heat
Failure of insulation influences the performance of infrared detector.Also, between 310 overhanging portion of infrared sensitive layer and micro-bridge structure 210
Distance increase, also improve the thickness of the second cavity between infrared sensitive layer 310 and micro-bridge structure 210, described second is empty
Chamber increases as infrared absorption resonant cavity, thickness, is conducive to improve infrared absorption efficiency.310 warpage of micro-bridge structure, also makes
The first cavity thickness obtained between micro-bridge structure 210 and substrate 100 is larger, and first cavity as chamber is thermally isolated, get over by thickness
Greatly, it is better that effect is thermally isolated.
The infrared sensitive layer 310 includes lower layer's protective layer 302a, upper layer protective layer 306a and protects positioned at the lower layer
Infrared sensitive thin film 303a and electric connection layer 305a, the electric connection layer 305a between sheath 302a, upper layer protective layer 306a
Connect the infrared sensitive thin film 303a and micro-bridge structure 210.The specific electric connection layer 305a is connect with electrode layer 205a.
The material of the infrared sensitive thin film 303a is amorphous silicon or vanadium oxide；The material of lower layer's protective layer 302a is
One of silica, silicon nitride or silicon oxynitride are a variety of, can be single or multi-layer structure；The upper layer protective layer 306a
Material be one of silica, silicon nitride or silicon oxynitride or a variety of, can be single or multi-layer structure.The upper layer is protected
The stress of sheath 306a and lower layer protective layer 302a are smaller or do not have, and avoid the infrared sensitive layer 310 that warpage occurs, influence institute
State absorption of the infrared sensitive layer 310 to infrared light.
Figure 17 is please referred to, in this specific embodiment, the bridge 502 of the micro-bridge structure 210 is located at micro-bridge structure
Between the junction 503 of bridge leg 501 and micro-bridge structure 210 and infrared sensitive layer 310, the plan view shape of the bridge 502 is S
Type, so that there is biggish stress, and stress is not easy to be released in bridge 502.The shape for changing the bridge 502, also can
The stress in the bridge 502 is set to change, to change the warpage degree of the bridge.In other specific realities of the invention
It applies in mode, the micro-bridge structure 210 is also possible to other figures, so that micro-bridge structure 210 has different internal stress, from
And adjust the warpage degree of the bridge.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (14)
1. a kind of infrared detector with micro-bridge structure characterized by comprising
Substrate is formed with metal interconnecting layer in the substrate surface；
Part is suspended on patterned micro-bridge structure above the substrate, and the micro-bridge structure includes bridge leg and bridge, described
Bridge leg is electrically connected with the metal interconnecting layer, and the bridge leg has a rake, is connect with the bridge；
Part is suspended on the patterned infrared sensitive layer above micro-bridge structure, and the infrared sensitive layer and the micro-bridge structure
Bridge electrical connection, by the supporting bridge, the bridge of the micro-bridge structure be located at below the infrared sensitive layer and with institute
Stating has a cavity between infrared sensitive layer, the sensitive layer has sinking portion, is located above the micro-bridge structure；
The bridge is hanging, is upturned under itself stress, is higher than the bridge leg, to increase the micro-bridge structure and institute
State the distance between the sinking portion of infrared sensitive layer.
2. the infrared detector according to claim 1 with micro-bridge structure, which is characterized in that in the substrate surface also
It is formed with metallic reflector, the bridge is suspended on above the metallic reflector.
3. the infrared detector according to claim 1 with micro-bridge structure, which is characterized in that the micro-bridge structure includes
First stressor layers, the second stressor layers and the electrode layer between first stressor layers and the second stressor layers, the electrode
Layer is electrically connected with the metal interconnecting layer, infrared sensitive layer.
4. the infrared detector according to claim 3 with micro-bridge structure, which is characterized in that the micro-bridge structure also wraps
Include the electrode anchor point for being electrically connected place for being electrically connected place and infrared sensitive layer with bridge positioned at electrode layer and metal interconnecting layer, portion
Divide the electrode anchors point between electrode layer and metal interconnecting layer, the part electrode anchors point is located at electrode layer and the first stress
Between layer.
5. the infrared detector according to claim 3 with micro-bridge structure, which is characterized in that first stressor layers
Material is one or more of silica, silicon nitride or silicon oxynitride；The material of second stressor layers is silica, nitridation
One or more of silicon or silicon oxynitride.
6. the infrared detector according to claim 1 or 3 with micro-bridge structure, which is characterized in that the infrared-sensitive
Layer includes that lower layer's protective layer, upper layer protective layer and infrared-sensitive between lower layer's protective layer, upper layer protective layer are thin
Film and electric connection layer, the electric connection layer connect the infrared sensitive thin film and micro-bridge structure.
7. the infrared detector according to claim 6 with micro-bridge structure, which is characterized in that the infrared sensitive thin film
Material be amorphous silicon or vanadium oxide；The material of lower layer's protective layer is one of silica, silicon nitride or silicon oxynitride
Or it is several；The material of the upper layer protective layer is one or more of silica, silicon nitride or silicon oxynitride.
8. the infrared detector according to claim 1 with micro-bridge structure, which is characterized in that the bridge of the micro-bridge structure
The plan view shape of beam is S-shaped.
9. a kind of manufacturing method of the infrared detector with micro-bridge structure characterized by comprising
Substrate is provided, is formed with metal interconnecting layer in the substrate surface；
The first sacrificial layer is formed in the substrate surface, is had in first sacrificial layer positioned at the metal interconnecting layer surface
First through hole；
Patterned micro-bridge structure, the micro-bridge structure are formed in the first through hole inner wall surface and the first sacrificial layer surface
Including bridge leg and bridge, the bridge leg is located in first through hole, is electrically connected with the metal interconnecting layer, and the bridge is located at first
Sacrificial layer surface is connect with the bridge leg, and the bridge has warping stress, and the bridge leg includes being located on first through hole side wall
Rake, connect with the bridge；
The second sacrificial layer is formed, second sacrificial layer covers the first sacrificial layer and micro-bridge structure, and has and be located at the bridge
There is recess above first through hole in second through-hole on beam surface, second sacrificial layer；
It is formed on second through-hole wall surface and second sacrificial layer surface graphical above micro-bridge structure
Infrared sensitive layer, the infrared sensitive layer the second sacrificial layer recess have sinking portion, the infrared sensitive layer and institute
The bridge electrical connection of micro-bridge structure is stated, and the bridge of the micro-bridge structure is located at below the infrared sensitive layer；
It removes first sacrificial layer and the second sacrificial layer is higher than so that the bridge is upturned under itself stress
The bridge leg, so that the infrared sensitive layer is raised, so that the distance between the sinking portion and micro-bridge structure increase, and described
There is a cavity between bridge and infrared sensitive layer.
10. the manufacturing method of the infrared detector according to claim 9 with micro-bridge structure, which is characterized in that described
The material of first sacrificial layer and the second sacrificial layer is amorphous silicon.
11. the manufacturing method of the infrared detector according to claim 9 with micro-bridge structure, which is characterized in that described
Patterned micro-bridge structure includes the first stressor layers, electrode layer and the second stressor layers；The formation of the patterned micro-bridge structure
Method includes: to form the first stress material layer in the first through hole inner wall surface and the first sacrificial layer surface；Along described
First stress material layer described in one via etch exposes the metal interconnecting layer surface of first through hole bottom；It is formed described in covering
The electrode material layer of first stress material layer and metal interconnecting layer；Form the second stress material for covering the electrode material layer
Layer；The second stress material layer, electrode material layer and the first stress material layer are etched, patterned micro-bridge structure is formed.
12. the manufacturing method of the infrared detector according to claim 11 with micro-bridge structure, which is characterized in that also wrap
It includes: before forming the electrode material layer, forming electrode anchor point, the part electrode in the first stress material layer surface
Anchor point is located in first through hole to be electrically connected with metal interconnecting layer, and the part electrode anchors point is located above the first sacrificial layer.
13. the manufacturing method of the infrared detector according to claim 11 with micro-bridge structure, which is characterized in that described
Infrared sensitive layer includes: lower layer's protective layer, upper layer protective layer and the figure between lower layer's protective layer, upper layer protective layer
Shape infrared sensitive thin film and electric connection layer, the electric connection layer connect the graphical infrared sensitive thin film and micro-bridge structure；
The forming method of the patterned infrared sensitive layer includes: in second through-hole wall surface and second sacrificial layer
Surface sequentially forms lower layer's protected material bed of material, positioned at the patterned infrared sensitive thin film of lower layer's protection materials layer surface；
Along infrared sensitive thin film, lower layer's protected material bed of material described in second via etch and the second stressor layers, partial electrode is exposed
Layer surface；Form the electrical connection material layer of connection infrared sensitive thin film and electrode layer；Formed cover the electrical connection material layer with
The upper layer protected material bed of material of infrared sensitive thin film；Etch the upper layer protected material bed of material, electrical connection material layer, infrared sensitive thin film
With lower layer's protected material bed of material, the infrared sensitive layer is formed.
14. the manufacturing method of the infrared detector according to claim 9 with micro-bridge structure, which is characterized in that use
Xenon difluoride gas etching removes first sacrificial layer and the second sacrificial layer.
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| CN107697881B (en) * | 2017-06-27 | 2020-05-15 | 上海集成电路研发中心有限公司 | Infrared sensor structure and preparation method thereof |
| CN107180888B (en) * | 2017-06-29 | 2019-02-12 | 上海集成电路研发中心有限公司 | A kind of infrared detector of high resistivity and preparation method thereof |
| CN109256401A (en) * | 2018-10-31 | 2019-01-22 | 南京方旭智芯微电子科技有限公司 | A kind of production method of micro-bridge structure, microelectronic component and micro-bridge structure |
| CN110120437B (en) * | 2019-04-30 | 2021-04-30 | 上海集成电路研发中心有限公司 | Infrared detector structure with high filling factor and manufacturing method thereof |
| CN111024244B (en) * | 2019-11-28 | 2021-12-10 | 浙江大立科技股份有限公司 | Semiconductor structure with micro-bridge structure, forming method thereof and micro-structure sensor |
| CN112551477B (en) * | 2020-12-01 | 2024-03-15 | 上海集成电路研发中心有限公司 | Bottom electrode infrared detector structure |
| CN114112055B (en) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | Infrared detector based on CMOS technology and preparation method thereof |
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