TW200821636A - Solid-state image pickup device and method of fabricating the same - Google Patents

Abstract

Provided are a solid-state imaging device, which eliminates problems due to a material arranged between a transparent cover and an imaging surface, permits the material to be easily arranged and the transparent cover to be easily bonded, and a method for manufacturing such solid-state imaging device. A glass cover (transparent cover) (60) is formed to cover the entire surface of an imaging surface (25) by having a gap between the cover and the solid-state imaging element (10) having the imaging surface (25). In the gap, inorganic or inorganic-organic hybrid transparent SOG material film (for instance, a transparent nanoporous SOG material film (50)) is arranged. The glass cover (60) is bonded to the transparent SOG material film. The transparent SOG material film is, for instance, a transparent amorphous silica film or an amorphous silicate film including or not including nanopores, or inorganic-organic hybrid material film.

Description

200821636 ^ '

V IX. Description of the Invention: [Technical Field] The present invention relates to a solid-state imaging device constructed by mounting a solid-state imaging element in a chip size package (CSP), and a method of manufacturing the same, and more particularly, a solid state A photographing apparatus and a method of manufacturing the same, the solid-state photographing device comprising a solid-state image pickup element and a transparent cover covering the photographing surface thereof, and a transparent S〇G (Spin-0n_Giass is disposed in a gap between the photographing surface and the transparent cover: a material film filled with a film of the SOG material or having a cavity formed in the gap. [Prior Art] In recent years, the solid-state imaging device has been progressing toward miniaturization and high functionality, and this has been carried out in portable devices such as mobile phones and portable computers, and further in the development of automobiles. Make the field of use more and more extensive. The solid-state imaging element (bare crystal) used in the solid-state imaging device has a microlens (microlens array) which is formed in an array corresponding to each pixel. In the case where the solid-state imaging element is mounted on the CSP, a transparent cover (generally a glass cover) covering the entire surface of the microlens array is attached to the package, and in the configuration, exists between the lens array and the transparent cover. There is a gap, in other words, a cavity is formed between the microlens array and the transparent cover, and a resin material is disposed (filled) between the microlens array and the transparent cover, and no void exists between the microlens array and the transparent cover. The cavity is filled with air, nitrogen, or the like as needed, or is set to a predetermined level of vacuum. An example of a solid-state imaging device having the above-described holes is disclosed in Japanese Laid-Open Patent Publication No. 2003-163341. The solid-state imaging device has a solid-state imaging element having a hermetic sealing portion (hole), which is formed by superimposing a flat plate portion made of glass on a solid-state imaging device, and then making The bump provided on the solid-state imaging element is electrically connected to the metal wiring formed on the flat plate, and is sealed by sealing the connection portion with a sealant. The solid-state imaging device is mounted after being positioned in a package having a clamping reference surface (for example, a ceramic package). The stress buffer layer is inserted between the metal wiring on the flat plate portion and the bump on the solid-state imaging element as a damage caused by the difference in thermal expansion rate (refer to the abstract, figure, paragraphs 0021 to 0402). In the non-patent document ι ("Nikkei Electronics", No. 21, 2005, the article is not limited to the metal wire connection to increase the value by replacing the package," (10) and patent document 2 (Sui Benkekai 2001_1 18967) An example of a solid-state imaging device that does not have the above-described holes is disclosed. The solid-state imaging device (manufactured by Sanyo Electric Co., Ltd.) described in Non-Patent Document 1 is filled with a transparent resin in the gap between the solid-state imaging element and the glass cover, and the transparent resin is used to prevent the formation of the solid-state imaging element. The stress caused by the difference in thermal expansion between turns. Further, as the cover glass, the difference in thermal expansion coefficient between the use of the solid-state imaging element and the crucible is small (see Fig. 3, page 1). The solid-state imaging device of Patent Document 2 accommodates a solid-state imaging element (wafer) in a concave portion of a casing (package), and then fills the concave portion 4 with a transparent resin to thereby "open" a short wavelength capable of absorbing ultraviolet rays. Light and a resin layer that is permeable to visible light. In this way, the color filter formed on the surface of the solid-state imaging element can be protected (refer to the abstract, figure, paragraph 〇〇1〇~〇〇2〇). [Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-16334i (Summary, Figs. 1 to 7, and paragraphs 0021 to 0402) [Patent Document 2] Japanese Patent Laid-Open No. 2001_1 18967 (Summary, Figs. 1 to 3, Paragraphs 〇〇1〇 to 0020) [Non-Patent Document 1] "Yanjing Electronics" November 21, 2005 (105 to 109 pages) [Summary of the Invention] The above-described solid-state imaging device having holes, due to no refraction The problem of the rate is preferable. However, since the package (hole) containing the transparent cover needs to be hermetically sealed, there is a possibility that the airtightness is lowered due to the expansion and contraction of the gas in the air cap. difficulty. If this is taken into consideration, it is preferable to have no gas cap. However, the solid-state imaging device having no holes described above does not need to be hermetically sealed, but care must be taken to select a material (hereinafter, referred to as an intermediate material) disposed between the transparent cover and the microlens array. For example, the refractive index of the intermediate material must be as low as possible close to the refractive index of air (n = 1). Moreover, in order to prevent damage caused by the difference between the (4) and the solid-state imaging element dream and the transparent cover ("the glass cover"), the thermal expansion of ten materials must be considered: the material and the transparent cover Adhesiveness. Similarly, the method of forming (filling) the material, and between the transparent cover and the intermediate material: 任 'Although the use of organic materials (for example, only materials, / _ _ 啊 Μ乍 Μ乍 中间 中间 于 于 于 organic In terms of the material, the thirsty g J5I can shake the denier / - μ people'.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, It is difficult to find that the intermediate material 8 200821636 is an inorganic material, and it is not easy to find a person who can satisfy all the above requirements, as disclosed in Patent Document 1. The solid-state imaging device has a cavity, and the intermediate material is not described or disclosed in Patent Document 1. The solid-state imaging device disclosed in Non-Patent Document i uses a synthetic resin as the intermediate material, but is not used. Inorganic material, X, is not described and disclosed in the non-patent document i. The use of the inorganic material is disclosed in Patent Document 2. (4) The imaging device uses short-wavelength light in the line and transmits visible light. Resin Specific examples of the intermediate == resin include, for example, Kyoritsu Co., Ltd., Ltd., a transparent resin (product number: xlv_14sg2). Patent Document 2 does not disclose the use of an inorganic material at all. The above problem is also caused by the solid-state camera/, solid-state imaging device using the solid-state imaging elements that are not listed, and the intermediate material == also exists. Between the shadows and the surface: the flattening of the shadow components, the monthly The gap between the seats, but in this case also the rate of radiation, the coefficient of thermal expansion, the fold of the transparent plex η Μ1 # 9 material, the stickiness between the transparent turns, the opening and closing of the intermediate material, and the method of transparent cover The same problem as the adhesion method. I Cheng (charged further, the above-mentioned problem with the intermediate material, the solid-state imaging device also exists. That is, the solid-state photo = the intermediate material of the cavity is distinguished by the requirement of airtightness, because: Forming the method, the method of adhering to the transparent cover, etc. The present invention has been made in consideration of such problems, and is called a solid-state imaging device that does not have the cavity, and its manufacture = 4; 2008 9636 p square stop is arranged in the intermediate material between the transparent box and the photographic surface of the solid-state photographic element caused by the difficulties (such as hygroscopicity and thermal expansion rate, refractive index), and the intermediate material can be made The configuration and the bonding with the transparent cover are easy. Another object of the present invention is to provide a solid-state imaging device having the cavity, and a JL 刍古,土_史-八衣坆 method, which can prevent the arrangement from being transparent The difficulty caused by the intermediate material between the cover and the solid-state cow's surface (such as hygroscopicity and thermal expansion rate), and the adhesion between the intermediate material and the transparent cover and the hermetic seal 1* is good and can Intermediate material The arrangement, the patterning, and the bonding with the transparent cover are easy. The other objects of the present invention, which are not described herein, are based on the following description and the drawings. The first viewpoint of the present month provides a solid (4) without voids. The nt photographic device 4' is formed by sealing a slab-shaped solid-state photographic element in a package containing a transparent cover, and is characterized in that: a solid-state photographic element having a photographic surface; and a transparent i' formed with the solid-state photographic element Between the photographic surfaces: a transparent SOG film covering the entire surface of the photographic surface; and an inorganic or inorganic organic mixture disposed in the gap to cover the entire surface of the photographic surface; The transparent sG material film is bonded directly or through a film of a transparent SOG material of an inorganic or inorganic organic mixture. (:) The solid-state imaging device according to the first aspect of the present invention, as described above, in the gap between the photographic surface of the solid surface and the transparent cover, i is provided with a transparent covering inorganic or inorganic organic mixture of the front surface s (10) material media. 200821636

V 4 That is, the material (intermediate material) disposed in the gap between the photographic surface and the transparent cover is not an organic transparent SiOG material film. Therefore, it is possible to prevent the intermediate material f from being difficult due to the organic system. For example, the solid-state imaging element is likely to be adversely affected by moisture due to high hygroscopicity, and the thermal expansion coefficient is large, which causes difficulty in peeling due to expansion and contraction. . Moreover, the transparent SOG material film is made of a transparent S〇G (Spin_0n_Glass) material film of an inorganic or inorganic organic mixture, so that: _ know, spin coating or spray c〇ating The transparent SOG material for forming a transparent s〇g material film is applied to cover the entire surface of the photographic surface of the solid-state photographic element, and an extremely flat surface is easily obtained (for example, a curvature of 0.1 or less) Even if there are irregularities caused by the microlens array on the photographic surface, the transparent s〇G material has fluidity, so the microlens array is transparent when applied. The s〇G material film is easily buried, and then the transparent SOG material thus coated is hardened by heating or the like to obtain the transparent s〇G material film covering the entire surface of the photographic surface. The transparent SOG material film is formed, in other words, the intermediate material is easily disposed. Further, since the surface of the transparent SOG material film is extremely flat, it is easy to directly or transparently pass through an inorganic or inorganic organic mixture. a transparent s〇g material film to bond the 忒 transparent 盍 to the transparent 〇 〇 G material film (the intermediate material). The refractive index of the transparent SOG material film of the inorganic or inorganic organic mixture is generally η=1·4~13, so the refractive index is not 11 200821636, which causes F. Also, because the transparent SOG material film contains, for example, fine (nano) pores, in other words, The nanoporous membrane can be reduced to about 1-2, so that the influence of the refractive index of the transparent s〇g material film can be minimized.

(B) A preferred example of the solid-state imaging device according to the first aspect of the present invention, wherein the transparent SOG material film is an inorganic and transparent amorphous oxidized oxide film (oxygen glass ion film) or a transparent amorphous material Acid film (Lihua salt glass film). According to still another preferred embodiment of the solid-state imaging device according to the first aspect of the invention, the moon-permeable SOG material film is inorganic and contains a plurality of micropores (nano pores). In other words, the M SOG material film is inorganic porous (p〇r〇usm. Here, the U pores) refers to pores of the nanometer (nm) level. Therefore, the transparent S〇G material film can also be referred to as inorganic. It is a nano-porous (face-to-face) film. Here, there is an advantage that the refractive index of the transparent S0G material film can be further reduced, and the refractive index of air (n = 1) can be approximated. For example, in the In the case of nanopores, although the bran η = 1 4 ^ ^ ^, 1 · 4 or so, the generation of nanopores can reduce the refractive index to about η = 1·2. The size of the pores, for example, preferably in the range of 1 〇 nm to 1 〇 4 nm ' ^ is also necessary to be set to be smaller than the photographic light wavelength of the solid-state photographic element. If the nanopore A is equal to or equal to the photographic light wavelength The incident light is reflected by the n-hole portion. If the solid-state imaging element is used for visible light, the size of the nanopore is preferably 380 nm or less. If the solid-state imaging element is for infrared light, Preferably, the size of the nanopore is set to be 3,000 nm or less. In this example, the inorganic porous film which can be used is the transparent non-12 2 00821636 A shell oxide film (a gasified stone glass film) or a transparent amorphous auric acid salt film (a metal oxide film). However, it is not limited to a material. The solid-state imaging device of the first aspect of the present invention In another preferred embodiment, the film of the SOG material is an inorganic-organic mixture, and has a bond as a primary bond, which is bonded to an organic component having carbon: stone A transparent film composed of a H-based material, or an amorphous ruthenium film in which an inorganic-organic mixture of fluorene (e.g., c c60) or a carbon nanotube is embedded may be used.

According to another preferred embodiment of the solid-state imaging device of the first aspect of the invention, the transparent cover is bonded to the transparent SOG film through a transparent-VOG material film, and the transparent SOG material film is inorganic and transparent. An amorphous yttrium oxide film or a transparent amorphous bismuth film. /4) The second aspect of the present invention provides a method of manufacturing a solid-state imaging device having no holes. The solid-state imaging device is a solid-state imaging device comprising a transparent cover-packed solid-state lens-like solid-state lens component, which is characterized by the following steps: preparing a solid-state imaging element having a photographic surface; forming an inorganic a transparent s〇G material film of an inorganic or organic mixture to cover the entire surface of the photographic surface; and a transparent cover of the transparent SOG material film directly or through an inorganic or inorganic organic mixture to form a transparent cover , the entire surface of the photo. (5) The method for producing a solid-state imaging device according to the second aspect of the present invention, wherein the inorganic SO or the inorganic SOG material film having a mixture of 13 200821636 is formed to cover the entire surface of the imaging surface, On the surface of the transparent s〇g material film, a transparent cover is directly or through a film of an inorganic or inorganic organic compound to cover the entire surface of the photographic surface. Therefore, the first aspect of the invention can be manufactured. The solid-state imaging device of the present invention. The material (intermediate material) disposed between the transparent cover and the imaging surface is not an organic transparent s〇G material film, so that the intermediate material can be prevented from being caused by an organic material. The above-mentioned difficulties, the transparent S〇G material film, because of the inorganic or inorganic organic mouthwash SOG material film, can be covered by the known spin coating method or spray coating method. The transparent (10) material for forming a transparent SOG material film is applied to the entire surface of the photographic surface of the photographic element, and an extremely flat surface such as a curvature of 40 or less is easily obtained. The unevenness caused by the microlens array does not change y. Since the transparent s〇G material is transparent, the material is movable, so the +_U lens array is coated by the transparent SOG material at the time of coating. The film is easy to bury. Bund, m ς ρ ρ ρ ρ 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后 后

Material film. Therefore, it is easy to open... The transparent SOG of the entire surface of the surface is easy to turn into the transparent S〇G material film, in other words, the intermediate material can be easily disposed. Due to the transparent SOG material product, #, #. Since the surface is extremely flat, it is easy to carry out the bonding step of the through-air, the transparent SOG material film or the material. m — transparent brain material membrane

(6) In the second embodiment of the present invention, the transparent S〇G material film and the A forming step include the following steps: forming 14 200821636 a polymer having a Sl-N (>5-Ni-Ni) bond, and all of the side chains are hydrogen perhydropolyazoxide film; and by firing the perhydropolyazane A transparent amorphous yttria (si02) film (yttria glass film) is formed into a film. In a preferred embodiment of the method for producing a solid-state imaging device according to a second aspect of the present invention, the step of forming the permeable solar hydrate SOG material film comprises the steps of: forming a bond having SiO (矽-oxygen) and S1_〇H (矽-hydrogen) a phthalate polymer film of an oxy) bond; and a transparent amorphous cerium oxide film formed by firing the silicate polymer film.

In another preferred embodiment of the method for producing a solid-state imaging device according to a second aspect of the present invention, an inorganic transparent s〇g material film (inorganic transparent porous SOG material film) containing a plurality of nanopores is used as the transparent film. S〇g material film. The meaning of the "nano pores" and the preferred dimensions thereof are the same as those of the solid-state imaging device according to the first aspect of the invention of the above (7). Another preferred embodiment of the method for producing a solid-state imaging device according to a second aspect of the present invention is the use of an inorganic-organic mixture and having a bond as a primary bond (10), which is bonded to an organic component having carbon. As the transparent s〇g material, the transparent film 'as a transparent s〇g material can be embedded with Fu (4) (for example, a cerium oxide glass film of a nano organic mixture.), and the machine has a poor 之 鲈 鲈Du 7丨.../ AK is the other two soils of the WAN method, the transparent cover is joined by another transparent SOG material film: the surface of the S0G material film; the inorganic type, and the transparent amorphous; A ruthenium film or a transparent amorphous bismuth film, a prawn 臈. #为 the other-transparent S0G material 15 200821636 ▲ Another preferred embodiment of the method for manufacturing a solid-state imaging device according to the second aspect of the present invention The bonding operation of the transparent cover and the inorganic transparent s〇g material film (the intermediate material) is carried out by anodic bonding using an oxygen plasma. () The third viewpoint of 'x Ming' provides a kind of hole. Solid-state photography device. In the transparent cover, the solid-state imaging element of the wafer-shaped solid-state imaging element includes a solid-state imaging element having a photographic surface, and a through-the-moon ridge formed to be in a gap with the photographic surface of the solid-state imaging element to cover The entire surface of the photographic surface; and a transparent s〇G material film of an inorganic or inorganic organic mixture disposed in the gap to be patterned to surround the photographic surface; 亥 盍 盍, directly or through another transparent 〇 〇 G material a film is bonded to the transparent SOG material film; the transparent SOG material film is formed on the transparent cover and has a cavity on the photographic surface. Ί & (8) The solid-state imaging device according to the third aspect of the present invention, as described above, in the solid-state imaging device a gap between the photographic surface and the transparent cover, and a patterned inorganic or inorganic-organic mixture SOG material film covering the entire surface of the photographic surface, and a material disposed between the photographic surface and the transparent cover (middle) "Materials" is not a film of the organic system. Therefore, it can be: the intermediate material is a difficult point caused by the organic system, for example, due to high hygroscopicity, the internal solid-state photographic element It is easy to be adversely affected by moisture, and the thermal expansion rate is large, which causes difficulty in peeling due to expansion and contraction. Moreover, the transparent SOG material film is a transparent S0G material film of inorganic or inorganic organic compound 16200821636, because jUsing the well-known spin coating method to cover the solid-state photographic element of the #忒 货.. 〜 〜 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The transparent SOG for film formation is made of 〇^ to 夕 主 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , It is different from the existence of the photographic surface, and the unevenness caused by the change of n ^ field will not be:,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,

‘You can get the SOG

Material section pancreas. Therefore, it is easy to form the transparent sG material film, and it is easy to arrange and pattern the intermediate material. Further, since the surface of the transparent SOG material film is extremely flat, it is easy to carry out the bonding of the transparent cover and the transparent sG material film (the intermediate material) @ '又' by selecting the transparent s〇G The material film 'is easy to obtain good adhesion to the transparent cover and good airtight sealing. Further, in the transparent SOG material film, holes are formed between the transparent cover and the image forming surface, so that the transparent material film does not exist on the image forming surface. Therefore, there is no problem caused by the refractive index of the film of the transparent s?G material. (9) In a preferred embodiment of the solid-state imaging device according to the third aspect of the present invention, the transparent SOG material film is an inorganic and transparent amorphous iridium oxide (Si〇2) film (yttrium oxide glass film) or transparent Amorphous bismuth film (silicate glass film). Similarly to the above (3), the transparent SOG material film may be an inorganic ruthenium and a plurality of fine pores (nano pores). According to another preferred embodiment of the solid-state imaging device of the third aspect of the present invention, the transparent SOG material film is an inorganic-organic mixture, and has a oxidized key (Si-0-Si) as a main chain 17 200821636 It is a transparent film made of a polysulfide-based material made of organic components bonded with glutinous rice. Or 0 ^ A疋, it is also possible to use an amorphous oxidized stone film embedded with flaxene (such as C6G) or nano carbon camp. According to another preferred embodiment of the solid-state imaging device of the third aspect of the present invention, the transparent cover is directly bonded to the transparent S〇G material film, and the holes are formed by selectively removing the transparent SOG material film. . According to another preferred embodiment of the solid-state imaging device of the third aspect of the invention, the transparent cover is bonded to the transparent coffee material film through a film of another transparent 〇G material; the hole is selectively removed The transparent s〇g-transparent S〇G material film is formed. 'other

According to another preferred embodiment of the solid-state imaging device of the third aspect of the present invention, the transparent cover is bonded to the transparent s〇GT film through another transparent S〇G material film; the other transparent s〇G material film It is an inorganic, transparent amorphous oxide oxide film or a transparent amorphous tantalate film. According to still another preferred embodiment of the solid-state imaging device of the third aspect of the present invention, the transparent cover is directly bonded to the transparent SOG material film; the holes are formed by selectively removing the transparent SOG material film. According to another preferred embodiment of the solid-state imaging device of the third aspect of the present invention, the transparent ruthenium is bonded to the transparent s〇g material film through another transparent SOC material film, the hole system selectively removing the transparent film The SOG material film is formed with another transparent SO<3 material film. (1) A fourth aspect of the present invention provides a method of manufacturing a solid-state imaging device having holes. The method for manufacturing the solid-state imaging device, wherein the solid-state imaging device is formed by sealing a wafer-like solid-state imaging element in a package containing a transparent cover, and is characterized by the following steps: preparing for photography Solid-state photographic element

Forming an inorganic yttrium or a right-handed yoke, η human A organic, a transparent material film of the composite to cover the entire surface of the photographic surface; patterning the film of the Ming SOG material to select the photographic surface; The patterned transparent SOG has been prepared for this; ^, the surface of the enamel film, directly or through the beneficial machine or an inorganic-organic mixture, another force-sensitive transparent S0G material film bonded transparent 盍' to cover the entire surface of the photographic surface a method of manufacturing a solid-state imaging device that forms a fourth aspect of the invention (1) between the transparent cover and the photographic surface, as described above, in order to cover the photographic surface After forming a transparent S0G material film of an inorganic or inorganic rich compound, the transparent SOG material film is patterned to selectively expose the photographic surface, and is designed to be transparent to the patterned SOG. On the surface of the material film, the film of the transparent SOG material of the inorganic or inorganic organic material is directly bonded to the surface of the film, and the core 71 is now covered to cover the front side of the photographic surface. Therefore, the solid-state imaging device of the third aspect of the present invention can be manufactured. Further, the material (intermediate material) disposed between the transparent cover and the photographic surface, the material = the transparent S0G material film, can prevent the above-mentioned difficulties caused by the organic bismuth material. π and further 'the transparent SOG material film, because of the inorganic or the S〇G material film of the compound, can be used to cover the solid-state photographic element by a known spin coating method or spray coating 19 200821636 method. Sog ^ ~ face-to-face coating method for the formation of the transparent sog material film for the transparent s 〇 之 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面 面Pipe private saws history seven + 丄Γ < surface). Moreover, this system is in the presence of money (10). (4) The unevenness caused by the micro-transparent material column will not change: so coated, transparent S0G material, hardened by heating or the like

1 This acid (BHF) can be easily _ into the desired pattern. 2 This is a film of air (10) material formed between the transparent cover and the photographic surface. That is, it is easy to form the transparent SOG material film, in other words, the intermediate material is easily disposed and patterned. Μ(10)(4) The surface of the film is extremely flat, so that the bonding process of the transparent cover and the transparent S0G material film (the intermediate material) can be easily performed, and by selecting the preferred transparent SOG material film, it is easy to obtain good adhesion to the transparent cover. Sexual and good airtight seal. (12) A preferred embodiment of the method for producing a solid-state imaging device according to the fourth aspect of the present invention, wherein the step of forming the transparent SOG material film comprises the steps of: forming a shixi nitrogen compound having a Si-N (Shixi-N) bond a polymer, and all of the side chains are hydrogen perhydropolyazoxide film; and a transparent amorphous yttrium oxide (Si〇2) film is formed by firing the perhydropolyazoxide film (oxidation)矽 glass film). According to still another preferred embodiment of the method for producing a solid-state imaging device according to the fourth aspect of the present invention, the step of forming the transparent SOG material film comprises the steps of: forming a Si_〇 (oxygen) bond and Si-0H (矽) a hydroxylate polymer film of a -hydroxyl bond; and a transparent amorphous cerium oxide film formed by firing the silicate polymer film. 20 200821636 A further preferred embodiment of the method for producing a solid-state imaging device according to the fourth aspect of the present invention is to use an inorganic transparent s〇g material plate (inorganic transparent porous SOG material film) containing a plurality of nanopores. As the transparent s〇g material film. Here, the meaning of "nano pores" and its preferred size are the same as those of the solid-state imaging device of the above aspect of the invention (7).

Another example of the method for producing a solid-state imaging device according to the fourth aspect of the present invention is to use an inorganic-organic mixture and to have an oxygen-cut bond (8).O.Si as a primary bond, and to have carbon A transparent film composed of a polysulfide-based material in which an organic component is bonded is used as the transparent SOG material film. Alternatively, a cerium oxide glass film may be embedded in a mixture of inorganic (4) (e.g., c6.) or inorganic organic carbon nanotubes. According to another preferred embodiment of the method for producing a solid-state imaging device according to a fourth aspect of the present invention, the transparent cover is bonded to the surface of the transparent SOG material film through another transparent sG material film; the inorganic system is used and is transparent. The amorphous oxidized oxide film or the transparent amorphous read salt film is used as the other transparent sputum film. According to still another preferred example of the method for producing a solid-state imaging device according to the fourth aspect of the present invention, the transparent cover is directly bonded to the transparent s〇g material film; the hole is selectively removed by the transparent s〇G material Formed by a film. A further preferred embodiment of the method for producing a solid-state imaging device according to a fourth aspect of the present invention, wherein the transparent cover is bonded to the transparent SOC material by a film of another transparent sG material to selectively remove the transparent The material film is patterned with both the other-transparent SOG material film. Another method for manufacturing a solid-state imaging device according to a fourth aspect of the present invention is the use of the transparent cover and the inorganic permeable material, απ » ^何#膜(中中) "In the present invention, the solid-state photographic element can be used in the photographic surface of the solid-state photographic element. '). "Also" may or may not contain a color filter (micro-transparent color film). The "clear cover" is not particularly limited as long as it is transparent. It is preferable to use Borax Glass (B2). 〇3/Si〇),

But not: 堇 is limited to this. Specifically, it is preferable to use Meg; swell: boron: glass "Pyrex one brand name, Deng:; 2 makeup" is preferably set to have a moderately rigid plate shape, for example == glass. The reason for this is that the bonding work with the ruthenium film can be easily performed. In the present invention, the "transparent film formed by the material, the glass material of the composite material. The transparent S〇G material film of the present invention is a transparent SOG material film", which means that the SOG material is s〇G material, which means that the spin is available. In the form of coating, inorganic or inorganic organic mixing is used.

/ As the inorganic s? G material for forming such a film, there are various types, and it is preferably a transparent amorphous amorphous oxide group i 2) (oxygen cut glass). #晶化氧化石 It is known to coat materials in various fields such as automobiles, ships, houses, and electronic equipment, for the purpose of rust prevention, undercoat protection, electrical insulation, and flattening. For example, it is preferred to use a polymer (polyazane) having a si_N (stone) bond, and all of the side chains are hydrogen of hydrogen: sulfasane, and by burning The amorphous oxygen oxide film formed by the perhydropolyazoxide film provides "PUPS polyazane coating 22 200821636 cloth or 'better can also use the US Hannewell company "Accuglass (trade name)" of the inorganic SOG material and "AccuOpto-T (trade name)" of the inorganic SOG material (Shihic acid salt) made by the company. These materials are used as planarization materials and insulating film materials in the field of semiconductors. Or, you can also use Japanese Patent No. 3254473 (special opening 2

10844) A glassy film of cerium oxide group disclosed in "Method for Producing Cerium Oxide-Based Glass Film and Coating Agent Using the Same". The glassy film is obtained by heating a liquid containing a ruthenium alkoxide metal, a volatile organic acid and a volatile nonaqueous organic solvent, and then applying the high viscosity liquid obtained by volatilizing the organic acid and the organic solvent to the substrate. The inorganic porous film which can be used in the present invention, as described above, has a transparent amorphous oxide oxide film (oxidized oxide glass film) and a transparent amorphous layer. The phosphatide film (the bismuth silicate film) is not limited thereto, and nanopores may be formed in the inorganic transparent SOG film other than the above. The method (gel method, the money is pulverized into a fine powder, and the partial = two = micro-powder is added and mixed in the well-known inorganic system... 1 This Γ has been coated with nano-pores and inorganic-transparent- About the characteristics and application of the I method of yttrium oxide proposed by Japan Oxygen Cutting Guard Co., Ltd. (10) υ, page 65~69=(Dongsuo Research Technical Report No. 45 again, in Japan Special Open 2004_182492 porous Plasmid and its manufacturer _ w microporous oxide斤 斤 不 不 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状 状Carving Dingwang; kneading active agent, using low-cost alkali citrate as the source of cerium oxide, the feldspar has a fine pore diameter of 2n < ΛΛ 2/ under the 25.25ml/g or more The fine pores: BET specific surface area is -g or more... The CG analytical method has a c constant of 45 Å or more, and a spherical particle having a particle diameter of 20 to 500 / / m. 乍 is a t-transparent g S 〇 G material film Any inorganic or organic mixed material may be used as long as it is an inorganic component and a transparent (10) material obtained by bonding an organic component to the inorganic f-knife. For example, a preferred system is used. A poly-stone-oxygen-fired material obtained by bonding an organic component (for example, a methyl group) having carbon as a main chain oxygen oxime bond (SBu O-Si) is used. A kind of poly-inorganic organic-inorganic hybrid material, which is provided by Suzuka Fuji xerox Month Co., Ltd. Oxidation of Leene ♦ Glass (Crushed Oxygen). The triethoxymethane is derivatized in the fluorene (for example, C6.) and the diarrhea is reacted with tetraethoxy (tetra). In place of Fu Le Le, :, you can use bismuth oxide glass with a carbon nanotube embedded in it. For this record, ^ is contained in the Department of Chemistry, Tokyo University of Science, Abe (Fang). Http.//www.rs.n〇da.tuc.ac.jp/gUnjiweb/w〇rki rid h Summary. Wonderful anodic bonding, it is known that glass is generally overlapped with enamel or metal, etc. Heating and voltage, thereby performing a method of adhesion bonding. The principle is as follows: 'with heating_, the side of the money side is the cathode, and the side of the (4) side is the anode, thereby forcing the cations in the glass to be diffused toward the cathode side, The glass 24 200821636 is bonded to promote adhesion and cause an electrostatic attraction chemical reaction between the glass and the crucible. (Effect of the Invention) The solid-state imaging device having no holes and the method of manufacturing the same can provide the following effects: (1) It is possible to prevent the difficulty caused by the intermediate material disposed between the transparent cover and the photographic surface of the solid-state imaging device ( For example, hygroscopicity and thermal expansion coefficient of refraction), (2) can facilitate the arrangement of the intermediate material and the transparent bonding. According to the solid-state imaging device having a cavity of the present invention and the method of manufacturing the same, the following effects can be obtained: (1) It is possible to prevent difficulty in the intermediate material disposed between the transparent cover and the image forming surface of the solid-state imaging device (for example, moisture absorption) Properties and thermal expansion:) '(2) The adhesion between the intermediate material and the transparent cover and the hermetic sealing property are good, so that the arrangement and patterning of the intermediate material and the bonding with the transparent cover are easy. BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. (First Embodiment) Fig. 1 is a cross-sectional view showing the configuration of a solid-state imaging device i according to an i-th embodiment of the present invention. Fig. 2(a) is a front view showing the appearance of the surface side (the appearance of the back side side). (The constitution of the solid-state imaging device) As shown in Fig. 1, the solid-state imaging device i is attached to the wafer size including the transparent glass cover. A solid-state photography element that seals a wafer in a package (csp). This solid-state imaging device 1 does not have a cavity in the gap between the imaging surface 25 and the cover glass 6'. 25 200821636 70 pieces of solid photography, having a plurality of light-receiving elements (not shown) and a plurality of light-receiving areas 23 formed on the surface area thereof. The light-emitting regions and the light-receiving elements are formed one by one with respect to each of the pixels PX. A transparent interlayer insulating film covering the entire surface of the substrate 11 is formed on the substrate 11. The surface of the interlayer insulating film 12 is a photographic surface of the solid-state photographic element 1 (), and a plurality of microlenses 22 arranged in an array, that is, a microlens array 22, are formed. The photographing surface 25 such as e-hai is formed one by one with respect to each pixel. Each of the φ-receiving regions 23 is disposed so as to pass through the interlayer insulating film 12 and overlap the corresponding microlens 22. In the vicinity of each of the microlenses 22, microfilters (color filters) 24 for three colors of R, g, and B (or for three colors of 'Hai and four colors for black) are formed. On the surface of the interlayer insulating film 12, a plurality of surface electrodes 15 are formed on the outer side region (the peripheral region of the photographic surface 25) of the microlens array 22A. The surface private poles 15 are used to extract electrical signals generated by the respective light-receiving elements to the outside of the solid-state imaging device i, and to pass through the surface of the core substrate u and the lead-out wiring formed inside the interlayer insulating film 12 ( Not shown), the φ light-receiving elements (each light-receiving area 23) are electrically connected. It is known from θ 1 that the imaging surface 25 has irregularities due to the microlens 22 and the surface electrode 15 . The interlayer insulating film 12 is actually composed of a plurality of laminated insulating films. The internal structure of the interlayer insulating film 12 is not critical to the present invention, and thus it is simplistic and depicted in Fig. 1 . On the surface of the interlayer insulating film 12, a transparent inorganic nanoporous S〇G material film 50 is formed, and the entire surface of the interlayer insulating film 12 is covered. The thickness of the nanoporous sg material film 5 , is larger than the thickness of the microlens 22 and the surface electrode 15 at 26 200821636 -, and the a' microlens array 22A and the surface electrode i5 are buried. The nanoporous SOG material is among the 5 。. Therefore, the surface of the nanoporous two-material film 50 is flat. A transparent glass cover 6 is formed on the surface of the (4) hole SOG material film 50. The glass cover 60 is formed of a transparent borosilicate glass (loud/ton) plate and is bonded to the surface of the nanoporous (four) material film 50 by "anode bonding", thereby solid-state photography with a wafer. Component 1 is integrated.

Further, the entire side surface of the laminated body composed of the solid cancer imaging element 10, the nanoporous sG material film %, and the glass cover 60 is covered with an insulating synthetic resin (not shown) constituting a part of csp. . Inside the interlayer insulating film 12, there are through holes penetrating the interlayer insulating film 12 in the direction of the front surface electrodes 15, and the through holes are filled with conductivity "!4". Further, inside the substrate ^, a through hole penetrating the ruthenium substrate u up and down is provided at a position directly below the surface electrode 15, and the conductive plugs 13 are filled in the through holes. The entire circumference of each of the conductive plugs 13 is covered with an insulating film 16a formed on the inner wall of the corresponding through hole, and the f-conductive plug 3 and the base substrate U are formed with an insulating film 16a to form an electric or a bead. The upper end and the lower end of each of the conductive interposing bases 4 are in contact with the surface electrode 15 located directly above and the conductive plug 13 located directly below it. The lower end of each of the conductive plugs 13 is exposed from the back surface of the ruthenium substrate u. The conductive plugs 14 and 13 which are in contact with each other constitute a through electrode which penetrates the base substrate 11 and causes the surface electrode on the surface of the interlayer insulating film 12 of the 矽 substrate u and the wiring film 18 on the back surface of the 矽 substrate u. Electrical connections are made to each other. 27 200821636 An insulating film 16b is formed on the back surface of the substrate 11, and a plurality of wiring films 18 are formed by insulating the region 1 other than the one end of the conductive insertion. Each of the wiring films 18 is in contact with the lower end of the corresponding conductive plug 13 exposed from the back surface of the 矽 substrate u. On the surface of the insulating film, a solder resist 17 is formed to cover the wiring film 18. In the solder resist 17, a via hole is formed at a position overlapping the wiring film 18, and the conductive contact 19 is filled in the through holes. On the surface of the solder resist 17, a copper paste 20 patterned in a predetermined shape is formed at a position overlapping each of the conductive contacts 19. Further, solder balls as external electrodes are formed on the copper pastes 2''. Thus, each of the surface electrodes 15 passes through the corresponding conductive plugs 13 and 14, the corresponding wiring film 18 and the conductive contact #19, and is located on the solid-state & clothing (January 1 in FIG. 1). The corresponding copper paste and solder ball u form an electrical connection. outer. The light of 卩 进入 enters the inside of the solid-state imaging device i through the glass cover 60, and passes through the nanoporous SOG material film 5, the microlens 22, and the microfilter 24, and is incident on the light-receiving elements provided in each of the pixels Ρχ The light receiving region 23 (not shown). In this manner, the incident light is photoelectrically converted in each of the light receiving regions, and an electrical signal corresponding to the incident light intensity is generated in each of the pixels. The electric signals are amplified by an amplifying element (not shown) provided adjacent to the light receiving region 23, and then transmitted to the surface electrode 15 through a lead wire (not shown). The electrical signals are further led to the corresponding copper paste 20 and solder balls 28 through the conductive plugs 14, the conductive plugs 13, the wiring films 18, and the conductive contacts 19 that are electrically connected to the surface electrodes 15. 200821636 21 Further, the solid-state imaging element 10 described above includes the microlens array 22A formed on the imaging surface 25, but may not include the microlens array 22A. Further, the above-described solid-state imaging element 1 includes the micro-filter 24, but may not include the micro-filter 24. (Manufacturing Method of Solid-State Photographic Apparatus) Next, a manufacturing method of the solid-state imaging apparatus 1 having the above configuration will be described.

Each of the steps of the manufacturing method described below is carried out at the wafer level. In the final step, as shown in Fig. 3, a plurality of solid-state imaging devices i are simultaneously formed on the wafer 7〇. Then, the dicing of the wafer 70 is performed along the scribe line formed in a checkerboard shape to separate the solid-state photographic devices i i from each other. Thus, the wafer-shaped solid-state imaging device shown in FIGS. 1 to 3 was fabricated. However, only the single solid-state imaging device 1 is illustrated and described herein because of the simplicity of the illustration and description.

First, initially, as shown in Fig. 4, the solid-state imaging element 1 of the above configuration is prepared. This solid-state photographic element 10' was subjected to a predetermined test and confirmed to be a good product. Further, although a solid-state imaging element 10 is shown in FIG. 4, actually, as described above, a plurality of solid-state imaging elements are disposed on the Shihwa wafer 70: ..., a person, as shown in FIG. u The surface interlayer insulating film 12 矣 and / mediated, θ, on the surface of the deep film 12 (photographing surface 25), the film 5 形成 is formed. This step 筏 | 尸 尸 尸 尸 SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO SO

卄笊 仃 仃. In this way, the thickness of the S〇G film is formed, and the coating film of the 蒋 蒋 与 and _ 抖 is formed. The coating completely buryes the mirror array 22A and the surface electrode 15 29 200821636

In the degree of setting _ L, this day, the surface of the nanoporous S0G material film is extremely flat (for example, the surface with a curvature of 〇.1_ or less). ^..., after heating the coating film of the SOG material to harden, and then react with the air 5 X knife or oxygen to change into a transparent amorphous oxidized oxide (Sl〇2) film (oxidation; 5 Evening glass film). In the present invention, an amorphous oxygen cut film which does not contain such nanopores can also be used. But, this time! In the embodiment, the refractive index of the amorphous oxygen is reduced to be close to the refractive index of the air, and an amorphous yttrium oxide film having a pore size of 3 is used. Therefore, the nanoporous SOG material film = 0 contains a plurality of nanopores (nano-sized pores) which are added and mixed with a porous amorphous material in advance of the s-G material. Γ Γ Γ 夕 夕 粉末 ( ( 微 微 微 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕Open 4] No. 82492. The large pores of the nano pores, the 纟吉依<, / from the _ idle straight, for example, preferably a target range of l〇nm~104nm, but it is also necessary to set it to be smaller than the mouthpiece. The first wavelength that can be photographed. The reason is that, if the awning is not larger than or equal to the nine wavelengths that can be photographed, the incident light is reflected by the 10 L skin without the fine holes. If the solid-state imaging element 10 is used for visible light, the size of the ri ^ # is not 380 nm or less, and the right solid-state imaging element 1 is used for & + ^ i 1 ", and the external light is used. The size δ of the pores of the Canon is 3,000 nm or less. Thus, a transparent film of non-clear & y S〇G material 50 is obtained. The nano-porous composition of the yangbei bismuth is second, as shown in Fig. 6, In the chamber of the anodic bonding apparatus (not shown in FIG. 5, 200821636), the crucible substrate u having the configuration shown in FIG. 5 is carried, and the crucible substrate 11 is held by the lower chuck 81 by electrostatic force. The electrostatic force holds the boron germanium glass plate 61 on the upper chuck 82. The boron germanium glass plate 61 has the same size and shape as the stone wafer 70. That is, the burnt glass plate 61 is actually a glass crystal. In addition, oxygen (〇2) plasma is generated in the chamber to perform ashing (〇2 plasma ashing), thereby making the surface of the nanoporous SOG material film 5〇A and boron The surface 6ia of the glass plate 61 is activated. Then, as shown in Fig. 7, the surface 50A of the nanoporous sG material film 50 is deleted. The surface 61A of the glass plate 61 is brought into contact, and a predetermined pressure is applied while the lower chuck 81 and the upper chuck 82 are applied, and the nanoporous SOG material film 50 is bonded to the anodic glass plate 61 by the anode in the presence of the oxygen plasma. The application of the voltage is performed by using the ruthenium substrate 丨i as the anode and the borosilicate glass plate 6丨 as the cathode. The conditions at this time are, for example, temperature = 16 〇〇 c, applied voltage = 100 V, and applied pressure = 1 〇〇〇. N, voltage and pressure application time = 5 minutes, whereby the joint surface 83, that is, the joint portion of the surface 50A of the nanoporous sG material film 5A and the surface 61A of the borosilicate glass plate 61, The nanoporous SOG material film 5 is firmly bonded to the boron germanium glass plate 61. Thus, when the bonding of the boron germanium glass plate 61 for forming the glass cover 60 is completed, then, as shown in Fig. 8, the adhesive is used. The laminate of the substrate 丨丨, the nanoporous SOG material film 50, and the borosilicate glass plate 61 is attached to the operation holder 84. This is for facilitating the processing (processing) of the ruthenium substrate U which is performed next time. In FIG. 8, although the holder M is slightly larger than the size of the 矽 substrate u, However, the actual size of the holder 84 is 31, 201121636 Yuzhen wafer 70. In addition, the rabbit face is thin in order to thin the 矽 substrate η, from the back side, the soil to a predetermined thickness (for example, 100~50/ Zm) This step is performed by dry etching or mechanical etching, known dry etching or wet etching. Secondly, the patterned photoresist film is used as a mask. The thinned germanium substrate 11 is selectively etched from the back side thereof, and as shown by 胄 9, a plurality of through holes 31 penetrating the slab substrate u are formed. The upper end of the through hole 31 arrives

The interlayer insulating film is formed directly below the surface electrodes 15 at a position where the through holes 31 are formed in the surface. This step can be carried out in the following cases: Reactive Ion Etclnng: Ion Reaction (4), ICE (InducU Kiss c, ied (4), Induction Engagement Etching). However, it can also be carried out by laser processing such as anodic oxidation. Each of the through holes 32 is in communication with the corresponding through hole. Next, the ruthenium substrate U is thermally oxidized. As shown in Fig. u, a ruthenium dioxide film (Si 〇 2) is formed on the exposed surface of the ruthenium substrate 11 as the insulating films i6a and (10). The insulating film 16a covers the inner wall of the through hole 31. The insulating film (10) covers the entire back surface of the substrate 除了 in addition to some portions of the through hole η. Next, as shown in Fig. 12, the conductive plugs 13 and 14 are formed by filling the polycrystalline stones in the through holes 31 and 32. This step can be made ν_Γ

Deposition: chemical vapor deposition) is carried out on the shixi substrate u # face-stacked polycrystalline stone. The thickness of the polycrystalline lithosphere must be set to a thickness at which the through holes 31 and 32 are filled with polycrystalline silicon. Next, as shown in Fig. 13, a patterned wiring film 18 is formed on the surface of the insulating film 16b. Each of the wiring films 18 is in contact with the corresponding conductive plug 13. This step can be carried out by selectively forming a metal film by sputtering, plating, paste, etc. 32 200821636. Then, a solder resist i7 is formed on the surface of the insulating film 16b to cover the wiring film. Next, after a through hole is formed in the portion of the solder pattern 17, a conductive material is buried therein to form a conductive contact 19. Each of the electrically conductive contacts is in contact with a corresponding mating (four) 18. In other words, the surface of the solder photoresist is flattened. The state at this time is as shown in FIG. ,

Next, as shown in Fig. 14, a plurality of patterned copper pastes 2 are formed on the surface of the solder resist 17. Each of the copper pastes 2G is in contact with the corresponding conductive contact 19. Then, solder balls 21 are formed on each of the copper pastes 2'. Thus, if a plurality of solid-state imaging devices 1 are formed on the wafer 70, the cuttings are formed along the forming of the checkerboard 70; 隹; r ^ ^ team &; 琛 70 cutting, so that the solid-state imaging devices 1 are mutually Separation. In this way, the media 1_G was able to pass the solid-state imaging device 1 of Figure 1. In the process of Beiji, Tie De, the old Jg. β/ Mi ^ ", the side of the Jun solid photographic device is The constituting part of the CSP is covered with an insulating synthetic resin (not shown) of a person, a 刀I/刀I knife. Thus, the process is terminated. As described above, the solid-state imaging device according to the i-th embodiment of the present invention 1' is a gap between the microlens array 22A of the solid-state imaging element 10 and the transparent glass cover 60, and is disposed to cover the inorganic transparent nano-porous SOG material (4) 50 of the entire surface of the microlens array 22a (photographing surface). The nano-hole SOG material film 50 (intermediate material) disposed in the gap between the microlens array 22A (photographing surface 25) and the transparent glass cover 6 is an inorganic transparent nanoporous SOG material 未 which does not contain organic matter. Therefore, it is possible to prevent the intermediate material from being difficult due to the organic material. For example, due to the high hygroscopicity, the internal solid photographing 70 pieces 10 are easily subjected to bad shadow due to moisture, and the thermal expansion is 33. Causes easy peeling due to shrinkage of the expansion Further, the nanoporous SOG material is coated on the solid-state imaging element by a spin coating method or a spray coating method by a spin-on glass material. Covering the microlens array 22A. At this time, it is easy to embed the microlens array 22A in the nanoporous s〇G material. Then, if the nanoporous SOG material is heated and hardened, it is obtained. The inorganic transparent nanoporous SOG material Μ 50 for covering the entire surface of the microlens array 22A. Therefore, the arrangement of the intermediate material can be facilitated. Further, since the inorganic transparent nanoporous S〇G material film 5〇 Since the transparent glass cover 60 is joined to each other by anodic bonding, the adhesive work of the transparent glass cover 60 is also easy. Moreover, the refractive index of the inorganic transparent nanoporous SOG material film is generally 'mu' but the present i-th implementation In the form, by including nanopores, it can be reduced to about 〇~1·2. Therefore, in terms of refractive index

There will be no hindrance. Further, as apparent from the above, in the solid-state imaging device i of the first embodiment, the entire system is hermetically sealed. That is, between the photographing surface 25 of the solid-state imaging element 1G and the cover glass 60, the core gap is filled with the nanoporous SOG material film, and the gap is completely sealed. Therefore, it is difficult to be affected by the external environment (苐2 embodiment)

1A is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a second embodiment of the present invention. 34 200821636 The solid-state imaging device 1A of the present embodiment, in place of the transparent nano-porous SOG material film 50, is provided with a transparent synthetic resin film between the two transparent nanoporous material films 50a and 50b and between the two. η, and the microlens 22 and the microfilter 24 are removed, and the rest is the same as the solid-state imaging device i of the first embodiment having no holes. Therefore, the same reference numerals as in the solid-state imaging device 1 i of the i-th embodiment shown in Fig. 1 are attached, and the description thereof is omitted. Further, Fig. 15 shows a solid-state imaging element 1 which does not have the microlens 22 and the micro color filter 24. In the solid-state imaging device 1A, on the surface (photographing surface 25) of the interlayer insulating film 12 of the Shih-hsing substrate u, the same material as the nano-surface SOG material film 50 of the solid-state imaging device 1 of the second embodiment is formed. Porous s〇G material film 〇a Next, after forming a thin resin film 51 on the surface of the nanoporous s〇G material film 5, a nanoporous SOG material film 50b is formed on the surface thereof (this corresponds to other transparent s 〇G material film). Nano porous s (five material film) 50 0b material can be the same or different. Although the refractive index is slightly increased, you can also use the non-slip hole SOG film to replace the nanoporous s〇g material film and 50b one or both As the synthetic resin film 51, polyamidamine decyl decane or the like can be used. The number of the nanoporous SOG material film is such that it is required to be arbitrarily adjusted. However, generally, it is preferably adjacent to the nanoporous s. The reason for the adhesion between the 〇G material films is to increase the adhesion between the nanoporous SOG material films 50a and 50b. Therefore, if the adhesion of the two material films is good, The synthetic resin film 51 is omitted. The solid-state imaging device of the second embodiment may be sealed by the airtight 35 200821636. That is, the nanoporous SOG is filled in the gap between the imaging surface 25 of the solid-state imaging element 10 and the cover glass 6 The material films 5〇a and 5〇b completely seal the gap, and the influence by the use of the synthetic resin film 51 is negligible. Therefore, similarly to the solid-state imaging device i of the third embodiment, Hard to be affected by the external environment (Embodiment 3) The solid-state imaging device according to the third embodiment of the present invention uses inorganic instead of the nanoporous s〇G material film 50 used in the first gamma yoke solid-state imaging device 1 The transparent s〇g material film of the organic mixture is the same as the second embodiment. Therefore, the description of the configuration and the manufacturing method will be omitted. The inorganic organic compound used in the third embodiment. For the mixed material, polyoxin (supplied by Suzuka Fujitsu Co., Ltd.) is used to have cerium oxide (Si_〇-Si) as a main chain and to have an organic component (for example, methyl) having carbon. In addition, if the inorganic SO-based material is used as the transparent SOG material which is mainly composed of an inorganic component and the organic component is bonded to the φ knife, an inorganic-organic hybrid material other than the above may be used. The mixed material has an easily selected material suitable for being disposed between the photographic surface 25 and the slab cover 60 because it can utilize the material of both the inorganic material and the organic material. Advantages of the performance of the solid-state imaging device according to the third embodiment, as in the case of the solid-state imaging device according to the first embodiment, the solid-state imaging device of the third embodiment has an advantage that it is difficult to perceive the influence of the external environment. (Embodiment) 36 200821636 Fig. 16 is a cross-sectional view showing a schematic configuration of a solid-state imaging device ib according to a fourth embodiment of the present invention. The solid-state imaging device 1B of the present invention is a solid-state imaging device according to the second embodiment. In 1A (see FIG. 15), a transparent BPSG (B〇r〇_ph〇) is added to the transparent synthetic resin 51 between the two transparent nanoporous SOG material films 50a and 5〇b and the like. Sph〇Silicate (1) (10)) The film 50c and the transparent synthetic resin film 52 are formed. That is, a nanoporous material film 50a is formed on the surface (photographing surface 25) of the transparent interlayer insulating film 12 of the solid-state imaging element 1 to form a synthetic resin film 51 thereon, and a nano-hole SOG material film 50b is formed thereon. A synthetic resin film 52 is formed thereon, and a known BPSG film 5〇c is formed thereon. Other than this point, the configuration is the same as that of the solid-state imaging device 1 of the i-th embodiment. In the solid-state imaging device 1B, a thin synthetic resin film 52 is formed on the surface of the nanoporous SOG material film 50b, and a BPSG film 5〇c is formed on the surface thereof. Further, the BPSG film 50c used herein is a boric acid film containing boron and phosphorus, which is one of the SOG material films. Thus, the intermediate material disposed (filled) in the gap between the photographic surface 25 and the glass cover 6 can be formed in a three-layer structure composed of three sG material films 5a, 5, and 5〇c. This three-layer construction can be realized, for example, in the manner described below. First, on the imaging surface 25 of the solid-state imaging device 10, the SOG material for the nanoporous SOG material film 5〇a is applied by a spin coating method to have a predetermined film thickness, and secondly, it is cured by heating or the like as a nanoporous film. s〇G material film 5〇a. Then, after the thin porous synthetic resin 臈37 200821636 51 is formed on the surface of the nanoporous SOG material film 5, the s〇g material for coating the nanoporous sG material film by spin coating is used to form a predetermined film thickness, and secondly, It is hardened by heating or the like as a film of a nanoporous SOG material. Further, after the thin synthetic resin film 52 is formed on the surface of the nanoporous (10) material film, the S0G material for the g film 50c is applied by a spin coating method to have a predetermined film thickness, and secondly, it is cured by twisting or the like as BPSG. Film 5Ge. Then, the glass cover was adhered to the surface of the BPSG film 5〇c. # The fourth implementation consumes the "photographing device 1B, which (4) also fills the nanoporous SOG material film with the gap between the photographic surface 25 of the m-state photographic element 1G and the glass cover 6 气... and the 鸠 and BpsG film 5 〇c, and the gap is completely sealed. Further, the effects of using the thin synthetic resin films 51 and 52 are negligible. Therefore, similarly to the solid-state imaging device 1 of the i-th embodiment, there is an advantage that it is hard to be affected by the external environment. (Fifth Embodiment) Fig. 17 is a cross-sectional view showing a schematic configuration of a solid-state imaging device (1) φ according to a fifth embodiment of the present invention. The solid-state imaging device 1C of the present embodiment is bonded to the surface of the nanoporous sg material film 5〇b except that the glass cover 6 is transmitted through the thick transparent synthetic resin film 53. The solid-state imaging device 1A has the same configuration. Since the synthetic resin film 53 has an action of an adhesive, the glass container 60 can be adhered to the surface of the nanoporous s(10) material film 50b by the synthetic resin film 53. In this case, it is not necessary to use the advantages of "anode bonding" used in the i-th embodiment. Since the influence on the refractive index due to the provision of the synthetic resin film 53 is in a negligible manner, the use of the synthetic resin film 53 does not cause an obstacle in terms of photographic performance. The 5th shell-shaped resentment solid-state photography system ic, although on the solid surface of the solid-state imaging element 10

The gap between the slope cover 60 is filled with the nanoporous S0G material films 50a and 5〇b, but the gap is not completely sealed. That is, the reason why the pores are not sealed is that the water may permeate through the synthetic resin film 53 due to the use of a thick synthetic resin film. In the solid-state imaging device of the above-described first to fourth embodiments, the solid-state imaging device is slightly more sensitive to the external environment than the S, and has a glass cover which is easier to use by using the synthetic resin film 53. The advantages of the joint. (Embodiment 6) FIG. 18 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1D according to a sixth embodiment of the present invention. The solid-state imaging device ID differs from the above-described first to fifth solid-state imaging devices in that it has a cavity 55 in the gap between the imaging surface 25 and the cover glass. In the solid-state imaging device 1D of the sixth embodiment, as shown in Fig. 18, the hole η is added to the second solid-state imaging device 1A (see Fig. 15). That is, the nanoporous SOG material crucible 50a located in the vicinity of the imaging surface 25 of the solid-state imaging element 1 and the synthetic resin film 51 adjacent thereto are selectively removed, and the cavity 55 is formed at the removed portions. The plane shape of the cavity 55 is a rectangular shape (refer to Fig. 25). The holes 55 are formed in the following manner. First, the s〇G material for the nanoporous SOG material film 50a is coated on the image plane 25, and then hardened to form a nanoporous sG material film 5〇a. Next, the nanometer 39 200821636 pore SOG material film 50a is selectively etched to expose the microlens array 22. On the other hand, on the plane on the bonding side of the cover glass 60, after coating the s〇G material for the porous SOG material film 5〇b, the nanoporous SOG material film 5〇b is formed by hardening it. . Next, after forming the synthetic resin film 51 on the surface of the remaining nanoporous SOG material film 50a or on the surface of the nanoporous SOG material film 50b on the glass cover side, the nanoporous SOG material film 5〇a and Nano porous s〇G material film _ sticky ^. Thus, a cavity 形成 is formed in the gap between the photographic film 25 and the glass cover 6 Μ. Since the nanoporous SOG material films 5〇a and _ are firmly bonded by the synthetic tree moon film, the airtight sealing property of the joint surface is good. The predetermined ΪΓ5: internal" can be enclosed in air or nitrogen as needed, or it can be kept in a "empty state" (low vacuum state). This can be easily realized by the implementation of the glass cover 60 in the adhesive atmosphere of the sinister photographic element 10. (4), or a vacuum ring: the solid-state imaging device 1D of the sixth embodiment of the invention, as described above, the imaging surface 25 of the imaging device 1G and the inorganic cover-type transparent SOG material film cell and the glass cover 6 To take a photo ~ face 2 5 . That is, g has been promoted to the material/intermediate material (intermediate material), between non-organic and glass cover 6〇 and 5〇b, and organic transparent transparent SOG material film 50& It can prevent the intermediate material from being caused by the organic material. Because of the high hygroscopicity, the internal solid-state imaging element is collapsed and it is easy to be adversely affected, and the thermal expansion rate is greatly expanded due to expansion. Waiting for difficulties. Further, the 'transparent (10) G material film 5Ga' is a film of the inorganic material of 200821636. Therefore, the transparent s〇g material for forming the transparent SOG material film 50a can be covered by a known spin coating method or a spray coating method. The solid-state imaging element 1 is coated on the entire surface of the photographic surface 25, and an extremely flat surface (for example, a surface having a curvature of the following) can be easily obtained. This does not change even if the unevenness caused by the microlens array 22A exists on the photographic surface. Then, the transparent SiO 2 material film 50a is obtained by patterning the transparent SOG material film 5Oa thus coated by heating or the like to form the holes 55. Further, since the transparent SOG material film 5〇b is also an inorganic s〇G material film, the transparent s?G for forming the transparent SOG material film 50b can be formed by a known spin coating method or spray coating method. The material is applied to the entire surface of the joint side of the glass cover 6〇, and an extremely flat surface (for example, a surface having a curvature of Ol/πη or less) can be easily obtained. Then, if using heat or the like,

The coated transparent S〇G material film 5〇b is hardened to obtain a transparent s〇G material film 50b.

Therefore, the formation of the transparent SOG material film 5 and 5 〇 b, in other words, the arrangement and patterning of the intermediate material described above can be easily performed. Further, since the surfaces of the transparent SOG material films 5〇a and 5〇b are extremely flat, the bonding process of the transparent SOG material film 5〇b and the transparent SOG material film 50a can be performed when the transparent glass is over 60. It is easy to enter, and it is easy to enter, and it is better to choose transparent SOG material films 50a and 50b, which can be handed over and adhered to, for example, A, Gu Yi, and good adhesion of the glass cover 6 (). Gold has a good hermetic seal. 〃 From the above, it is known that the 5 5 is hermetically sealed. In the solid-state imaging device 1D of the sixth embodiment, the holes, that is, the nanoporous sG material films 5〇a and 5〇b' are disposed in the gap between the imaging surface 25 200821636 of the solid-state imaging device 10 and the glass cover 60. After the nanoporous S〇G material film 5〇b is removed, the holes 55 are formed, so that the holes can be completely sealed. Therefore, it has the advantage that it is difficult to be affected by the external environment. Further, in the sixth embodiment, the nano-porous SOG material film 50a disposed in the gap between the imaging surface 25 of the solid-state imaging device 10 and the cover glass 60 is partially removed to form the cavity 55, but the present invention Not limited to this. It is also possible to partially remove both of the nanoporous SOG material films 5a and 5b to form holes 55 (see the ninth embodiment of Fig. 25). (Embodiment 7) FIG. 19 is a cross-sectional view showing a schematic configuration of a solid-state imaging device IE according to a seventh embodiment of the present invention. The solid-state imaging device 1E also has a cavity 55 in the gap between the imaging surface 25 and the cover glass 60. In the solid-state imaging device 1E of the seventh embodiment, the synthetic resin film 51, the microlens 22, and the micro-draw color sheet 24 are removed in the solid-state imaging device 1D of the sixth embodiment. The nanoporous s〇g material film 50a on the side of the solid-state imaging element and the nanoporous s〇G material film 5〇b located on the side of the glass cover 6 were directly bonded without using an adhesive. The synthetic resin film 51 which functions as an adhesive is not used, and the nanoporous S〇g material films 50a and 50b which are desired to have a desired hermetic sealing property can be obtained, for example, by using the above-mentioned r PHpS polysulfide coating (available from Axel Asia Co., Ltd.) obtained by amorphous oxidized oxide film, or phosphorus-doped amorphous yttrium oxide film, boron-doped phosphorus amorphous yttrium oxide film The rice is composed of fine holes. 42 200821636 This is the solid-state imaging device 1 £ of the embodiment of the "Side 7". As in the case of the 6th, the cavity 55 is hermetically sealed. Therefore, it has the advantage that it is difficult to be affected by the external environment. (Eighth embodiment)

Fig. 2 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1F according to an eighth embodiment of the present invention. This solid-state imaging device IF also has a cavity 55 in the gap between the photographic surface 25 and the glass crucible 6G. On the surface of the solid-state imaging device, as shown in Fig. 26, there is a rectangular cavity via a transparent glass cover.

The solid-state imaging device ιρ according to the eighth embodiment corresponds to the configuration in which the nanoporous sG material film _ and the synthetic resin film 51 are removed from the solid-state imaging device 1D of the sixth embodiment. Namely, the glass cover 6 is directly joined to the SOG material film 54 on the side of the solid-state flash device 10 without using an adhesive. However, the SOG material film 54 is not a nanoporous point and is different from the nanoporous material film 5Gb. This is because the microlens array is removed, and the SOG material film 54 is selectively removed to form the holes 55, and the human light does not pass through the SOG material film 54. Therefore, it is not necessary to reduce the refractive index to SOG material. The membrane 54 is made porous in nanometer. However, it is of course also possible to provide the film 54 as nanoporous. n The solid-state imaging device according to the eighth embodiment is a configuration in which the solid-state imaging device material film 50 of the first embodiment is replaced by the S Ο G material film 5 4, 1F, and the nano-porous s-G can also be referred to as phase 1. Further, holes 5 5 are added.

Thus, the nano-43 200821636 SOG material films 50a and 5〇b can be obtained by using the adhesive which is not used as an adhesive and can still be firmly adhered to obtain the desired hermetic sealing property. ^ ^ ^ For example, an amorphous emulsified enamel plate obtained by using the above-mentioned "PHPS polydecane coating" (available from Axel ^ ^ ^ A Wei Wei A), or a phosphorus-doped amorphous oxygen or bismuth telluride film A boron-doped phosphorus amorphous yttrium oxide film is formed by forming fine pores of nanoparticles. The manufacturing method of the solid-state imaging device 1F of the eighth embodiment of the brother-in-law.

In the same manner as in the case of the solid-state imaging device 1 of the first embodiment, the structure shown in Fig. 21 (corresponding to the structure shown in Fig. 5), that is, the solid-state imaging element before the formation of the electrode is formed. The film 5 of a predetermined thickness of the SOG material film 54e s〇G is formed to have a thickness in which the microlens array 22A and the surface electrode 15 are buried inside. Eight people, as shown in Fig. 22, form a patterned mask on the surface of the s〇G material film 54, forming a planar shape of the Guardian 55. Next, the SOG material film 54 is selectively removed by buffering hydrofluoric acid (BHF) using a mask 56'. At this time, the microlens and interlayer insulating film 12 formed of an organic material

It is not affected by the etching effect, so it is preferable. As a result, as shown in Fig. 22, the microlens array 22A is exposed, and the surface electrode 15 is buried in the s〇g material film 54. Next, after the mask 50 is removed, the boron germanium glass plate 61 is bonded to the surface of the patterned SOG material film 54. The state at this time is as shown in FIG. Although this bonding can be performed by the "anode bonding" used in the first embodiment, if the SOG material film 54 and the cover glass 6 are combined to obtain good adhesion and desired airtight sealing properties, It can be directly joined by a method other than "anode bonding". 44 200821636 For example, it is also possible to use a fusion bonding method of A1_Ge system & sensible material which exhibits a strong property to adhere to a glass material, and a smelting joint of a ship glass of a low-refining point system. The subsequent steps are the same as those in the first embodiment. In other words, on the surface opposite to the bonding surface 83 of the glass crucible 60, the laminated body composed of the ruthenium substrate 11, the SOG material film 54, and the borosilicate glass plate 61 is attached to the operation holder 84 by using an adhesive, and then the ruthenium substrate is applied. The step of forming a thin plate of U, forming a through electrode for the counter substrate 11, and forming a solder ball 21 as an external electrode. Thus, the configuration shown in Fig. 24 (corresponding to the configuration shown in Fig. 14) is obtained. The female Honda obtained a plurality of solid-state imaging devices ^F on the Shihwa wafer 70, that is, the cutting of the silicon wafer 70 along the checkerboard line 71 to separate the solid state imaging devices 1F from each other. Thus, the solid-state imaging device 1F having the configuration shown in Figs. 2A and 25 is obtained. Then, in the actual process, the entire side surface of the solid-state imaging device 1F is covered with an insulating synthetic resin (not shown) constituting a part of the CSP. This completes the process. As described above, in the solid-state imaging device 1F of the eighth embodiment, the cavity 55 is hermetically sealed. I Tian is in a gap between the photographic surface 2 』 which is firmly bonded and the glass cover 60, and a non-porous SOG material film 54 is disposed in the gap, and the SOG material film 54 is partially and arbitrarily removed to form an empty space 65, so The holes 5 5 can be completely sealed. Therefore, the road sound ^ has the advantage of being difficult to be affected by the external environment. (Embodiment 9) FIG. 2 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1 (45 200821636) of the scent of the scent of the scent of the scent of the present invention. The solid-state imaging device 1G is also on the photographic surface 25 The solid-state imaging device 1G of the ninth embodiment is partially removed from the solid-state imaging device 1D (see FIG. 18) of the sixth embodiment, as shown in FIG. 25, in the gap between the glass cover 60 and the glass cover 60. Both of the porous SOG material films 50a and 50b are formed thereby forming the voids 55.

The other configuration is the same as that of the solid-state imaging device i D of the sixth embodiment. In the solid-state imaging device 1G, since the height (thickness) of the cavity 55 is equal to the sum of the film thicknesses of the nanoporous SOG material films 5a and 50b, the plane of the solid-state imaging element 10 side of the glass cover 60 is The distance of the photographing surface 25 is longer than that of the solid-state imaging device id of the sixth embodiment. This hole 55 is easily obtained by continuously etching both the nanoporous SOG material films 50a and 50b by using the same mask. For example, if buffered hydrofluoric acid (BHF) is used as a decoction agent, such money can be easily realized. In the solid-state imaging device ig of the ninth embodiment, the cavity 55 is also hermetically sealed by φ. That is, the nanoporous SOG material films 50a and 50b are selectively removed by laminating the nanoporous SOG material films 50a and 5b in a gap between the photographic surface 25 and the squeezing cover 6 which are strongly bonded. Since the holes 55 are formed, the holes 55 can be completely sealed. Therefore, there is an advantage that it is difficult to be affected by the external environment. (Modifications) The above-described first to ninth embodiments are examples of the present invention. Therefore, the present invention is not limited to the embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, in the above embodiment, a 46 200821636 or two nanoporous SOG material film is used, but an S (DG material film) which does not contain nanopores (non-nanoporous) may be used. A nanoporous S〇G material film and a coffee material film not containing nanopores (non-nanoporous) may be used in combination. SOG of inorganic nanoporous s〇G material film and inorganic organic mixture may also be used in combination. Material film: σ Further, in the above-described first to ninth embodiments, the solder ball 21 is provided as an external electrode on the back surface of the solid-state imaging device, but the ball 21 may not be provided. In this case, the copper paste 2 is Further, in the above embodiments, the position of the external electrode 5 is determined to be 21, and the position is offset from the through electrode (the conductive interposer 13 and 14), but may be located at the through electrode. The position of the overlap or the deflection is outside the electrode. The solid-state imaging element is arbitrarily configured, and may or may not have a lens (microlens) or a color filter (microfilter). [Simplified Schematic] FIG. Solid-state imaging device according to a first embodiment of the present invention Fig. 2(a) is a front view of the surface of the solid-state imaging device according to the first embodiment of the present invention, and Fig. 2 is an external view of the back side. Fig. 3 is a plurality of the present invention. FIG. 4 is a partial cross-sectional view showing a method of manufacturing the solid-state imaging device according to the first embodiment of the present invention. FIG. 5 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention. A partial cross-sectional view showing a method of fabricating a solid-state photographing garment according to a first embodiment of the present invention is continuous in Fig. 4. 47 200821636 The photograph shows the solid state of the embodiment of the present invention. The partial cross-sectional view is continuous with respect to Fig. 5. The photographing device shows the method of manufacturing the solid-state photographing & clothing according to the first embodiment of the present invention. Manufacture of the device: a partial cross-sectional view of the solid state diagram 9 & method of the embodiment of the present invention, which is continuous with Fig. 7. The photographing device shows the solid m 1π of the embodiment of the present invention. Partial sectional view of the method, Fig. 8 is a continuation of Fig. 8. Fig. W is a partial cross-sectional view of the solid state method according to the first embodiment of the present invention, which is a continuation of Fig. 9. Steps of the brothers and sisters _ ^ Ψ „ w 乡 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷 刷Step 丨 - Photographing device u A partial cross-sectional view showing a solid-state image/manufacturing method according to the first embodiment of the present invention, which is continuous with FIG. 11. The % I system shows the first aspect of the present invention by steps. A partial cross-sectional view of the solid-state lens device of the embodiment, which is continuous with FIG. The photographing & L is a partial cross-sectional view of the solid state sweater device according to the first embodiment of the present invention, which is a continuation of FIG. The present invention is a cross-sectional view showing a configuration of a solid-state imaging device according to a second embodiment of the present invention. Fig. 16 is a cross-sectional view showing the configuration of a solid-state imaging device according to a fourth embodiment of the present invention. Figure 17 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a first embodiment of the present invention. 48 200821636 Figure 18 is a cross-sectional view showing a schematic configuration of the present invention. The solid-state imaging device of the sixth embodiment is a cross-sectional view showing a schematic configuration of the present invention. A solid-state imaging device according to an eighth embodiment of the solid-state imaging device according to the embodiment of the present invention is a cross-sectional view showing a schematic configuration of the present invention. Fig. 21 is a partial cross-sectional view showing the method of solidification h according to the eighth embodiment of the present invention.

Fig. 2 is a partial cross-sectional view showing the manufacture of the solid-state imaging device according to the eighth embodiment of the present invention, which is shown in Fig. 2, and is continuous with Fig. 21. A partial cross-sectional view of the solid-state imaging device of the embodiment of the present invention, which is shown in Fig. 22, is shown in the following. Fig. 24 is a partial cross-sectional view showing a method of manufacturing the solid P garment according to the eighth embodiment of the present invention, which is a continuation of Fig. 23. Figure 25 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a ninth embodiment of the present invention. Fig. 26 is a front view showing the surface of the solid-state imaging device according to the eighth embodiment of the present invention. [Main component symbol description] I '1A, IB, 1C 'ID, IE, IF, 1G solid-state imaging device 10 x 1〇5 solid-state photography Element 1〇a Solid-state photographic element before penetrating electrode formation 矽 Substrate 12 Interlayer insulating film 49 200821636 13 Conductive plug 14 Conductive plug 15 Surface electrode 16a, 16b Insulating film 17 Solder resist 18 Wiring film 19 Conductive contact 20 copper paste

21 solder ball (external electrode) 22 microlens 22 A microlens array 23 light receiving area 24 micro color filter 25 photo plane 31 through hole 32 through hole 50, 50a, 50b nanoporous SOG material film 50c BPSG film (SOG material film 5 0 A Nanoporous SOG material film surface 51, 52, 53 Synthetic resin film 54 SOG material film 55 Hole 5 6 Mask 57 SOG material film window 50 200821636 60 Glass cover 61 Boron glass plate 61A Boron Glass plate 70 矽 wafer 71 underline 81 lower clamp 82 upper clamp 83 joint surface 84 operation holder 85 adhesive PX pixel 51

Claims (1)

200821636 X. Patent application Fan Gu: Jing 2:=!! The shadow device is made by sealing the △ photographic element in the package with transparent cover, which is characterized by: solid-state photographic element with photographic surface; transparent cover Forming a gap with the solid-state photographic element to cover the entire surface of the photographic surface; and (4) interposing a plurality of mechanisms or inorganic-organic mixtures through the gap to cover the entire surface of the photographic surface; The transparent cover is bonded to the 5 Å transparent s G material film either directly or through another transparent transparent material film. The rnn photographic device is formed by sealing a wafer-shaped solid-state photographic element in a package having a transparent cover, and is characterized in that: a solid-state photographic element having a photographic surface; and a transparent cover formed to be photographed with the solid-state photographic element a gap is provided between the faces to cover the entire surface of the photographic surface; and a transparent S (KJ material film of the inorganic or inorganic organic mixture is disposed in the gap and patterned to surround the photographic surface; the transparent cover is directly Or bonding to the transparent SOG material film through another transparent s〇G material film; the transparent SOG material film is formed with holes between the transparent cover and the photographic surface. 3. As claimed in the patent scope! A solid-state imaging device of the second aspect, wherein the transparent SOG material film is an inorganic and transparent amorphous yttrium oxide film. 4. As claimed in the patent scope! "Second-state solid-state imaging device, wherein 52 200821636 has passed through the moon (four) film There is no (four) and transparent non-day-day material salt film. For example, the solid-state photographic device of claim 1 or 2, zhonghai transparent S〇G material film is inorganic and contains a plurality of nanometers. Fine holes. 6. If the patent application scope is 帛5 item: the size of the rice pores is smaller than the solid-state photographic element 2:: Light: 7. For example, the solid-g photography device of the lsil2 item of the patent application scope, The transparent organic SOG material film is an inorganic-organic mixture, and the yttrium oxide bond is oxidized to form a poly-anthracene k 糸 material which is bonded to the right 妒 妒 、,,, main chain a, and vice versa. A transparent film made up. Milk 8. The solid-state photographic device of the patent application scope lsil2, the transparent SOG material film is an inorganic-organic mixture, and an amorphous yttrium oxide film formed by embedding a Fule or a carbon nanotube. 9. The solid-state imaging device of claim 3, wherein the transparent cover is bonded to the transparent two: film through a film of another transparent sG material; the other transparent sG material film An inorganic, transparent amorphous yttrium oxide film or a transparent amorphous bismuth film. 10. The solid-state imaging device of claim 4, wherein the transparent cover is bonded to the transparent material film through a film of another transparent S〇G material; the other transparent SOG material film is inorganic, It is a transparent amorphous yttrium oxide film or a transparent amorphous bismuth film. 11. The solid-state imaging device of claim 2, wherein the transparent cover is directly bonded to the transparent sG material film; the holes are formed by selectively removing the transparent sG material film. The invention relates to a solid-state imaging device according to claim 2, wherein the transparent cover is bonded to the transparent s〇G material film through another transparent s〇G material film; It is formed by removing both the transparent s〇g material film and another transparent SOG material film. The solid-state imaging device according to any one of the claims 2, 2, and 12, wherein the continuous median beta τ 3 solid photographic device does not have a lens and a color filter. The invention relates to a method for manufacturing a solid-state imaging device, which is obtained by a solid-state imaging element in a package containing a transparent cover, which is characterized by the following steps: Preparing a solid-state photographic element having a photographic surface; forming a transparent s〇g material film of an inorganic or inorganic organic mixture to cover the entire surface of the photographic surface; and directly or transmitting inorganic or inorganic particles on the surface of the transparent SOG material film A further transparent coffee material film of the mixture is bonded to the transparent cover to cover the entire surface of the photographic surface. A method of manufacturing a solid-state imaging device comprising: (4) a wafer-shaped solid-state imaging element in a package having a transparent cover, comprising the following steps: preparing a solid-state image having a photographic surface a transparent s〇g material film of an inorganic or inorganic organic mixture to cover the entire surface of the photographic surface; • patterning a 忒 transparent SOG material film to selectively expose the photographic surface, and 54 200821636 And a second patterned transparent SOG material film surface, directly or through an inorganic or inorganic organic mixture, another transparent sG material film is bonded to cover the entire surface of the photographic surface; the transparent S0G material film, A method of manufacturing a solid-state imaging device according to the invention of claim 14, wherein the step of forming the transparent SOG material film comprises the following steps: forming a polymer of a nitrogen compound of Si-N bond, and all of the side bonds are hydrogen perhydropolyazoxide film; and transparent by firing the perhydropolyazoxide film The method of manufacturing a solid-state photographic device according to claim 14 or 15, wherein the step of forming the transparent SOG material film comprises the steps of: φ forming a Si_〇 bond and Si a phthalate polymer film of -OH bond; and a transparent amorphous yttrium oxide film formed by firing the bismuth silicate polymer film. 18 A solid-state photographic device according to claim 14 or 15 The method for producing w, wherein a film of an inorganic transparent S?G material containing a plurality of nanopores is used as the film of the transparent SOG material. 19. The manufacturer of the solid-state image device of claim 18, winter 4, /, medium, the size of the nanopore is smaller than the photographic light wavelength of the solid-state imaging element. 55 200821636 2〇. The manufacturing method of the solid-state imaging device of claim 14 or 15 A transparent film made of a polyoxyalkylene-based material having an inorganic-organic mixture and having an oxidized hair bond as a main chain bonded to an organic component having carbon as a transparent SOG material film. Such as applying A method of producing a solid-state imaging device according to Item 14 or 15, wherein a cerium oxide glass crucible having an inorganic-organic mixture in which a fluorene or a carbon nanotube is embedded is used as the transparent SOG material film. The method of manufacturing a solid-state imaging device according to Item 14 or 15, wherein the transparent cover is connected to the surface of the transparent SOG material film through another transparent SOG material film; and the inorganic-based and transparent amorphous material is used. An oxidized residual or transparent amorphous salt film as the other SOG material film. The method of manufacturing a solid-state imaging device according to claim 15 of the 'the transparent cover is a direct bonding material transparent coffee material film Surface. The cavity is formed by selectively removing the transparent s-G material, and is formed into a solid-state photographic device according to claim 15 of the patent scope. The surface of the transparent SOG material film is passed through another transparent layer; (4) bonding to the hole system is patterned by selectively removing both of the transparent SOG material film. And /, another transparent 25, such as the patent application scope 14, 15, 23, μ solid-state imaging device manufacturing method, wherein the transparent core: the two items (10) material film steps, combined with oxygen polymerization Heart = 56 200821636 Line 0 XI, schema: as the next page 57