CN101926017B - 基于蒽的可溶液加工的有机半导体 - Google Patents

基于蒽的可溶液加工的有机半导体 Download PDF

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Publication number
CN101926017B
CN101926017B CN2008801253556A CN200880125355A CN101926017B CN 101926017 B CN101926017 B CN 101926017B CN 2008801253556 A CN2008801253556 A CN 2008801253556A CN 200880125355 A CN200880125355 A CN 200880125355A CN 101926017 B CN101926017 B CN 101926017B
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carbon atoms
semiconductor
layer
formula
poly
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Expired - Fee Related
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CN2008801253556A
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CN101926017A (zh
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朱培旺
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
CN2008801253556A 2007-12-17 2008-11-20 基于蒽的可溶液加工的有机半导体 Expired - Fee Related CN101926017B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1410107P 2007-12-17 2007-12-17
US61/014,101 2007-12-17
PCT/US2008/084122 WO2009079150A1 (en) 2007-12-17 2008-11-20 Solution processable organic semiconductors based on anthracene

Publications (2)

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CN101926017A CN101926017A (zh) 2010-12-22
CN101926017B true CN101926017B (zh) 2013-09-25

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Country Link
US (1) US8178873B2 (https=)
EP (1) EP2232606A1 (https=)
JP (1) JP2011508967A (https=)
CN (1) CN101926017B (https=)
WO (1) WO2009079150A1 (https=)

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US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
EP2435446B8 (en) 2009-05-29 2017-02-22 3M Innovative Properties Company Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
KR101736920B1 (ko) * 2009-12-15 2017-05-18 엘지디스플레이 주식회사 아릴기가 치환된 안트라센 화합물, 그 제조 방법 및 이를 이용한 유기 박막 트랜지스터
US8779179B2 (en) 2010-05-28 2014-07-15 3M Innovative Properties Company Synthesis of silyl acetylenes
US8809568B2 (en) 2010-05-28 2014-08-19 3M Innovative Properties Company Synthesis of silylacetylenes
US8963131B2 (en) * 2011-06-13 2015-02-24 Samsung Electronics Co., Ltd. Electronic device
CN103159919B (zh) * 2011-12-09 2016-01-13 海洋王照明科技股份有限公司 氰基蒽醌基共聚物太阳能电池材料及其制备方法和应用
EP3001471A4 (en) * 2013-05-23 2016-09-21 Fujifilm Corp ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC THIN-LAYER TRANSISTOR, ELECTRONIC PAPER AND DISPLAY DEVICE
WO2014189116A1 (ja) * 2013-05-23 2014-11-27 富士フイルム株式会社 有機半導体組成物および有機薄膜トランジスタならびに電子ペーパーおよびディスプレイデバイス
DE112014005330T5 (de) * 2013-11-21 2016-08-04 Daicel Corporation Lösungsmittel zum Herstellen eines organischen Transistors
JP6140626B2 (ja) * 2014-03-03 2017-05-31 富士フイルム株式会社 有機薄膜トランジスタ及びその製造方法
JP6116018B2 (ja) * 2015-01-29 2017-04-19 国立大学法人 東京大学 有機半導体素子
JP6562398B2 (ja) * 2015-03-19 2019-08-21 三菱ケミカル株式会社 半導体デバイス、太陽電池、太陽電池モジュール、及び組成物
US10703692B2 (en) * 2017-02-06 2020-07-07 Raytheon Company Solid state materials with tunable dielectric response and rotational anisotropy

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US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
CN1556803A (zh) 2002-05-07 2004-12-22 LG��ѧ��ʽ���� 用于电致发光的新有机化合物和使用该化合物的有机电致发光器件
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JP2011524908A (ja) * 2008-06-19 2011-09-08 スリーエム イノベイティブ プロパティズ カンパニー 溶液処理可能な有機半導体

Patent Citations (1)

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Also Published As

Publication number Publication date
JP2011508967A (ja) 2011-03-17
WO2009079150A1 (en) 2009-06-25
EP2232606A1 (en) 2010-09-29
CN101926017A (zh) 2010-12-22
US8178873B2 (en) 2012-05-15
US20100270542A1 (en) 2010-10-28

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