CN101926017B - 基于蒽的可溶液加工的有机半导体 - Google Patents

基于蒽的可溶液加工的有机半导体 Download PDF

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Publication number
CN101926017B
CN101926017B CN2008801253556A CN200880125355A CN101926017B CN 101926017 B CN101926017 B CN 101926017B CN 2008801253556 A CN2008801253556 A CN 2008801253556A CN 200880125355 A CN200880125355 A CN 200880125355A CN 101926017 B CN101926017 B CN 101926017B
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carbon atoms
semiconductor
layer
formula
poly
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Expired - Fee Related
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CN101926017A (zh
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朱培旺
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
CN2008801253556A 2007-12-17 2008-11-20 基于蒽的可溶液加工的有机半导体 Expired - Fee Related CN101926017B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1410107P 2007-12-17 2007-12-17
US61/014,101 2007-12-17
PCT/US2008/084122 WO2009079150A1 (en) 2007-12-17 2008-11-20 Solution processable organic semiconductors based on anthracene

Publications (2)

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CN101926017A CN101926017A (zh) 2010-12-22
CN101926017B true CN101926017B (zh) 2013-09-25

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CN2008801253556A Expired - Fee Related CN101926017B (zh) 2007-12-17 2008-11-20 基于蒽的可溶液加工的有机半导体

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Country Link
US (1) US8178873B2 (https=)
EP (1) EP2232606A1 (https=)
JP (1) JP2011508967A (https=)
CN (1) CN101926017B (https=)
WO (1) WO2009079150A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2232606A1 (en) 2007-12-17 2010-09-29 3M Innovative Properties Company Solution processable organic semiconductors based on anthracene
KR101622420B1 (ko) * 2008-05-30 2016-05-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 실릴에티닐 펜타센 화합물 및 조성물 및 그의 제조 및 사용 방법
JP2011524908A (ja) * 2008-06-19 2011-09-08 スリーエム イノベイティブ プロパティズ カンパニー 溶液処理可能な有機半導体
US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
SG176209A1 (en) 2009-05-29 2012-01-30 3M Innovative Properties Co Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
KR101736920B1 (ko) * 2009-12-15 2017-05-18 엘지디스플레이 주식회사 아릴기가 치환된 안트라센 화합물, 그 제조 방법 및 이를 이용한 유기 박막 트랜지스터
WO2011150020A1 (en) 2010-05-28 2011-12-01 3M Innovative Properties Company Synthesis of silyl acetylenes
US8779179B2 (en) 2010-05-28 2014-07-15 3M Innovative Properties Company Synthesis of silyl acetylenes
US8963131B2 (en) * 2011-06-13 2015-02-24 Samsung Electronics Co., Ltd. Electronic device
CN103159919B (zh) * 2011-12-09 2016-01-13 海洋王照明科技股份有限公司 氰基蒽醌基共聚物太阳能电池材料及其制备方法和应用
CN105229814B (zh) * 2013-05-23 2017-11-10 富士胶片株式会社 有机半导体组合物、有机薄膜晶体管、以及电子纸及显示装置
CN105229813B (zh) * 2013-05-23 2017-08-25 富士胶片株式会社 有机半导体组合物、有机薄膜晶体管、以及电子纸及显示装置
DE112014005330T5 (de) * 2013-11-21 2016-08-04 Daicel Corporation Lösungsmittel zum Herstellen eines organischen Transistors
JP6140626B2 (ja) 2014-03-03 2017-05-31 富士フイルム株式会社 有機薄膜トランジスタ及びその製造方法
JP6116018B2 (ja) 2015-01-29 2017-04-19 国立大学法人 東京大学 有機半導体素子
JP6562398B2 (ja) * 2015-03-19 2019-08-21 三菱ケミカル株式会社 半導体デバイス、太陽電池、太陽電池モジュール、及び組成物
US10703692B2 (en) * 2017-02-06 2020-07-07 Raytheon Company Solid state materials with tunable dielectric response and rotational anisotropy

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1783781A2 (en) * 2003-11-28 2007-05-09 Merck Patent GmbH Organic semiconducting layer formulations comprising polyacenes and organic binder polymers

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433359B1 (en) 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
US6998068B2 (en) 2003-08-15 2006-02-14 3M Innovative Properties Company Acene-thiophene semiconductors
US6946676B2 (en) 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6617609B2 (en) 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
AU2003230308A1 (en) 2002-05-07 2003-11-11 Lg Chem, Ltd. New organic compounds for electroluminescence and organic electroluminescent devices using the same
US7939818B2 (en) * 2003-10-28 2011-05-10 Basf Se Diketopyrrolopyrrole polymers
JP2005302888A (ja) * 2004-04-08 2005-10-27 Sharp Corp 光センサー、光センサーアレイ及びその駆動方法
US7351606B2 (en) 2004-06-24 2008-04-01 Palo Alto Research Center Incorporated Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer
US20100025661A1 (en) * 2004-07-02 2010-02-04 Guofang Wang Luminescent material and organic electroluminescent device using the same
US7355199B2 (en) 2004-11-02 2008-04-08 E.I. Du Pont De Nemours And Company Substituted anthracenes and electronic devices containing the substituted anthracenes
EP1986247A1 (en) * 2005-05-12 2008-10-29 MERCK PATENT GmbH Polyacene and semiconductor Formulation
JP2008545631A (ja) * 2005-05-21 2008-12-18 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング オリゴマーポリアセンおよび半導体調製物
KR100996780B1 (ko) * 2005-07-05 2010-11-25 히다치 가세고교 가부시끼가이샤 감광성 접착제 조성물, 및 이것을 이용하여 얻어지는 접착필름, 접착 시트, 접착제층 부착 반도체 웨이퍼,반도체장치 및 전자부품
US7319153B2 (en) 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
JP2007088115A (ja) * 2005-09-21 2007-04-05 Konica Minolta Holdings Inc 有機半導体材料，有機半導体膜，有機半導体デバイス及び有機薄膜トランジスタ
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US7666968B2 (en) 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
JP4781434B2 (ja) * 2006-08-03 2011-09-28 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及び積層体
EP2132213B1 (en) 2007-03-07 2013-05-15 University of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
WO2008120839A1 (en) 2007-03-30 2008-10-09 Gyeongsang National University Industrial And Academic Collaboration Foundation Novel organic semiconductor compound, and organic thin film transistor using the same
JP5524043B2 (ja) 2007-04-19 2014-06-18 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 置換されたペンタセン類の調製方法
CN101679150B (zh) 2007-05-17 2013-05-15 Lg化学株式会社 蒽衍生物和使用该蒽衍生物的有机电子器件
CN101918512B (zh) * 2007-06-01 2014-09-24 E.I.内穆尔杜邦公司 绿色发光材料
EP2232606A1 (en) 2007-12-17 2010-09-29 3M Innovative Properties Company Solution processable organic semiconductors based on anthracene
JP2011524908A (ja) 2008-06-19 2011-09-08 スリーエム イノベイティブ プロパティズ カンパニー 溶液処理可能な有機半導体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1783781A2 (en) * 2003-11-28 2007-05-09 Merck Patent GmbH Organic semiconducting layer formulations comprising polyacenes and organic binder polymers

Also Published As

Publication number Publication date
JP2011508967A (ja) 2011-03-17
CN101926017A (zh) 2010-12-22
US20100270542A1 (en) 2010-10-28
EP2232606A1 (en) 2010-09-29
US8178873B2 (en) 2012-05-15
WO2009079150A1 (en) 2009-06-25

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