CN101925860B - 用于制造光掩膜的方法和实现该方法的设备 - Google Patents

用于制造光掩膜的方法和实现该方法的设备 Download PDF

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Publication number
CN101925860B
CN101925860B CN2008801255744A CN200880125574A CN101925860B CN 101925860 B CN101925860 B CN 101925860B CN 2008801255744 A CN2008801255744 A CN 2008801255744A CN 200880125574 A CN200880125574 A CN 200880125574A CN 101925860 B CN101925860 B CN 101925860B
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CN
China
Prior art keywords
photomask
infrared radiation
sealed chamber
chamber
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2008801255744A
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English (en)
Chinese (zh)
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CN101925860A (zh
Inventor
A·法夫尔
M·达弗纳特
J-M·福雷
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Alcatel Lucent SAS
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Alcatel Lucent SAS
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Publication date
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Publication of CN101925860A publication Critical patent/CN101925860A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN2008801255744A 2008-03-05 2008-12-29 用于制造光掩膜的方法和实现该方法的设备 Expired - Fee Related CN101925860B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0851427 2008-03-05
FR0851427 2008-03-05
PCT/FR2008/052425 WO2009112655A1 (fr) 2008-03-05 2008-12-29 Procede de fabrication de photomasques et dispositif pour sa mise en œuvre

Publications (2)

Publication Number Publication Date
CN101925860A CN101925860A (zh) 2010-12-22
CN101925860B true CN101925860B (zh) 2012-12-12

Family

ID=40886698

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801255744A Expired - Fee Related CN101925860B (zh) 2008-03-05 2008-12-29 用于制造光掩膜的方法和实现该方法的设备

Country Status (4)

Country Link
JP (1) JP5372966B2 (ko)
KR (2) KR101253825B1 (ko)
CN (1) CN101925860B (ko)
WO (1) WO2009112655A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2962198B1 (fr) * 2010-06-30 2014-04-11 Alcatel Lucent Dispositif de sechage d'un photomasque
DE102019110706A1 (de) 2018-09-28 2020-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum herstellen von euv-fotomasken

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1494956A (zh) * 2002-09-12 2004-05-12 Asml 从表面上去除微粒的清洗方法、清洗装置和光刻投影装置
CN1996142A (zh) * 2005-12-22 2007-07-11 奇梦达股份公司 用于保存和使用光掩模的装置以及使用该装置的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5355474A (en) * 1976-10-29 1978-05-19 Kyoritsu Kogyo Method of treating ammonium peroxysulfate waste liquid
JP3266156B2 (ja) * 1990-09-19 2002-03-18 株式会社ニコン 照明用光源装置および露光装置
JPH0521411A (ja) * 1991-07-12 1993-01-29 Fujitsu Ltd 表面処理方法及び表面処理装置
US6279249B1 (en) * 1999-12-30 2001-08-28 Intel Corporation Reduced particle contamination manufacturing and packaging for reticles
EP1297566A2 (en) * 2000-06-14 2003-04-02 Applied Materials, Inc. Substrate cleaning apparatus and method
JP2002196478A (ja) * 2000-12-27 2002-07-12 Semiconductor Leading Edge Technologies Inc フォトマスクユニット、フォトマスク装置、投影露光装置、投影露光方法及び半導体装置
JP2005134666A (ja) * 2003-10-30 2005-05-26 Hoya Corp フォトマスク及び映像デバイスの製造方法
JP4564742B2 (ja) * 2003-12-03 2010-10-20 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005274770A (ja) * 2004-03-23 2005-10-06 Sony Corp マスク保管容器およびマスク処理方法
JP4475510B2 (ja) * 2004-06-25 2010-06-09 Hoya株式会社 リソグラフィーマスクの製造方法、リソグラフィーマスク、及びリソグラフィーマスクの露光方法
WO2006101315A1 (en) * 2005-03-21 2006-09-28 Pkl Co., Ltd. Device and method for cleaning photomask
US20060243300A1 (en) * 2005-04-27 2006-11-02 Patrick Klingbeil Method for cleaning lithographic apparatus
EP1832353A3 (fr) * 2006-03-08 2009-05-06 St Microelectronics S.A. Nettoyage de masques de photolithographie
US7993464B2 (en) * 2007-08-09 2011-08-09 Rave, Llc Apparatus and method for indirect surface cleaning

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1494956A (zh) * 2002-09-12 2004-05-12 Asml 从表面上去除微粒的清洗方法、清洗装置和光刻投影装置
CN1996142A (zh) * 2005-12-22 2007-07-11 奇梦达股份公司 用于保存和使用光掩模的装置以及使用该装置的方法

Also Published As

Publication number Publication date
CN101925860A (zh) 2010-12-22
KR20130016404A (ko) 2013-02-14
JP5372966B2 (ja) 2013-12-18
KR101253825B1 (ko) 2013-04-12
JP2011513783A (ja) 2011-04-28
KR101253948B1 (ko) 2013-04-16
KR20100101003A (ko) 2010-09-15
WO2009112655A1 (fr) 2009-09-17

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Granted publication date: 20121212

Termination date: 20131229