CN101925860B - Method of fabricating photomasks and device for implementing the same - Google Patents
Method of fabricating photomasks and device for implementing the same Download PDFInfo
- Publication number
- CN101925860B CN101925860B CN2008801255744A CN200880125574A CN101925860B CN 101925860 B CN101925860 B CN 101925860B CN 2008801255744 A CN2008801255744 A CN 2008801255744A CN 200880125574 A CN200880125574 A CN 200880125574A CN 101925860 B CN101925860 B CN 101925860B
- Authority
- CN
- China
- Prior art keywords
- photomask
- infrared radiation
- sealed chamber
- chamber
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
The method of fabricating photomasks comprises at least one step of cleaning the photomask and at least one step of laying a protective film on the photomask after it has been fabricated. The method according to the invention furthermore includes at least one step of removing the ammoniacal and sulphate residues between the cleaning step and the film application step. This step comprises the following operations: the photomask is placed in a sealed enclosure; a low pressure is established in the sealed enclosure by pumping out the gases that it contains; the photomask is subjected to infrared irradiation; the infrared irradiation is stopped; a check is made that the temperature of the photomask is at most equal to 50 DEG C; atmospheric pressure is re-established in the enclosure; and the photomask is extracted from the enclosure. The device for implementing the method according to the invention comprises a sealed enclosure containing at least one photomask, a pumping unit for creating and maintaining the vacuum inside the enclosure, a system for holding at least one photomask in place, positioned inside the sealed enclosure, infrared irradiation means, and a gas injection system.
Description
Technical field
The present invention relates to a kind of method that is used to make photomask, it is used to make the microelectronic element of submicron order especially.In addition, it also relates to the equipment that is used to realize this method.
Background technology
Semiconductor substrate particularly is made with silicon, at present based on being sent to from mask that pattern on the substrate utilizes plasma etch techniques and by micromechanization.Photomask is equal to photographic negative: it comprises the information that will print on the medium.It is used as usually and is used to make public and print to the transmission method on the Semiconductor substrate.Comprise the various parameter-definition that focuses on wavelength and directly be printed to the degree of depth of the active region on the substrate.Outside this active region, but details is not printed maybe be influential to the transmission of photomask.Pollution in the active region has direct influence for the image that prints on the substrate, because defective can be printed.Yet if it occurs in the outside in this zone, this pollution has only remote effect to this image, for example reduces the transmission of contrast or minimizing photomask.
In addition, semicon industry studying how to reduce print image size with low-cost electronic components that obtain constantly to diminish, can be integrated.The size of photomask becomes littler, and the pollution demand becomes more harsh.Photomask thereby be to keep clean and exercisable key, expensive and complicated element.
The activation of photomask (active) surface must have no particulate, particularly in focal plane, because the particulate of these pollutions has produced the defective that is printed and be copied on the Semiconductor substrate.When its manufacture process finished, film was cleaned and then a film is put on the photomask so that have no particulate on its activated surface.The purposes of film is that the user at photomask protects it in the operating period.Film comprises light film sediment (parallel multiple-level surface), and it has good transmission and the influence of light ray through it is reduced.This film is precipitated on the activated surface next door of photomask, and separates certain space with it.This can will run up on the film outside the focus area (physically separating with activated surface) at the pollutant that accumulates on the activated surface of photomask thus.Like this, these pollutants can not printed during the stone plate transfer printing: but film does not directly prevent fume can reduce their influences to image.
File US 2001/005944 relates to the gas pollutant of elimination from the ambient atmosphere environment, for example O
2, CO
2And H
2O, they possibly be present in the space between photomask and the film.These pollutants are harmful especially, correctly carry out because they hinder lithography operations through the radiation delivery that suppresses common employed 157nm.Purification is carried out in sealed chamber through being exposed to UV radiation, plasma, ozone and/or high temperature in a vacuum or in afterglow gas, and this processing causes gas to go to adsorb acceleration.
Yet, for the increase that produces institute's energy requirement that littler pattern makes public causes new problem.When being exposed to this high-energy when producing the crystal that increases in time, the combination of gases under the film together, for example ammonia, fluorine and volatile organic compound gas.Under film and thereby the crystal that in focus area, occurs cause the defective in the print area on the substrate.These crystal cause main problem, because they cause the many unpredictable defective on the substrate, and can influence more than 20% of current state-of-the-art photomask.
Wherein a kind of chemical reaction can be summed up through following formula:
H
2SO
4+NH
3+hv→(NH
4)
2SO
4solid。
Ammonia (NH
3) from multiple source, but main from the mankind's activity in the photomask fabrication region and from use to these photomasks.Increase phenomenon in order to reduce crystal, semiconductor and photomask manufacturer have carried out a large amount of investments and have been used at protected environment storage and the strategy that transmits photomask to reduce they and the contacting of ammonia to be limited in the ammonia of finding in the clean room and to have set.
Sulfuric acid (H
2SO
4) use during each step of manufacture process by photomask manufacturer usually, particularly in etching and demoulding operating period.Under the most common situation, sulphate residues handled and generated to the final step in the cleaning course before putting the film step need with sulfate.The final step of demoulding process also generates sulphate residues, and this step comprises the resin that applies before removing and before cleaning, carries out.This sulphate residues under the film thereby will discharge the thing that is absorbed, this is that these crystal appear at the main cause in the factory of silicon manufacturer.The step of sulphate residues is attempted to be intended to reduce through amending method or increase by photomask manufacturer, reduces the amount of the sulfate that during cleaning, uses.Yet the new method that these are studied or the technology of alleviation are relatively expensive and not too effective, and it can not eliminate during each step of manufacture process the use to sulfate fully.
After the demoulding step of back, put film with a cleaning.Last cleaning is in clean zone, to carry out.This film enables to stop the particulate accumulation that in clean room or manufacturing equipment, produces on the activated surface of photomask.
One of scheme of alleviating comprises the activated surface of periodically checking photomask.As long as first crystal occurs, photomask just is returned the manufacturer to it.Film is removed and cleans, and then new film is put on this photomask.This operation must be carried out by photomask manufacturer rather than user, and this is time-consuming for managing the stock that causes owing to the operating period of photomask shortening and brings bigger fringe cost.
Therefore, nowadays for semiconductor element manufacturer maximum problem be availability and the operating period that is used to make semi-conductive photomask.This is to make the key link in the chain because these photomasks are silicon chips, and the complexity of their increase causes higher cost.
Summary of the invention
The object of the invention thereby be to make photomask that the longer operating period arranged through the frequency that reduces clean operation.
Another object of the present invention is to reduce and the risk of polluting relevant photomask degradation through the crystal that forms under the film.
Another object of the present invention is to disclose a kind ofly can remove the residual ammonia that in photomask is made, produces and the method for sulphate cpd.
The objective of the invention is a kind of photomask manufacturing approach, comprise that the step of at least one clear light mask is placed in the step on the photomask with at least one with protective film.This method comprises that also at least one removes the step of ammonia and sulphate residues between cleaning and film placement step.The step that removes ammonia and sulphate residues comprises:
-said photomask is placed sealed chamber;
-in the sealing chamber, make low pressure through the gas of extracting out in the sealed chamber;
-make said photomask be exposed to infrared radiation;
-stop infrared radiation;
The problem of the said photomask of-inspection is not above 50 ℃;
Atmospheric pressure in the said chamber of-recovery; With
-said photomask is shifted out said chamber.
Preferably, gas bleeding in a time period of 20 minutes to 5 hours.
Infrared radiation (IR) has quickened the selectivity of targeted chemicals and has gone absorption, and has improved their performance.The extraction of gas has improved the absorption of going of residue greatly in the chamber that carries out simultaneously with infrared radiation in order to make vacuum, and enables to be adsorbed on nearly all ammonia and the sulphate cpd that produces during cleaning and the demoulding step especially.Removing ammonia and sulphate residues enables protective film is put on the substrate that cleans fully.
The wavelength of infrared radiation is that the major parameter that adsorbs is removed in influence, and the degree of depth of going to adsorb changes with selected wavelength change.Its wavelength is referred to as the infrared radiation ripple of " shortwave " and will deeper injects in the material than " medium wave " or " long wave ", and this is more effective for the surface.
Infrared radiation must carefully be controlled, because the photomask that it makes its temperature possibly be no more than 300 ℃ heats up.More than 300 ℃, photomask can irreversibly be destroyed.Temperature can preferably from 50 ℃ to 150 ℃, and most preferably approach 80 ℃ from 50 ℃ to 300 ℃.Accelerated diffusion and gone adsorption phenomena owing to implementing temperature increase that infrared radiation causes.
Advantageously, when the temperature in the chamber is less than or equal to 50 ℃, recover the atmospheric pressure in the chamber, this possibly also need wait for a period of time after infrared radiation stops.
In a particular variant, in gas bleeding from chamber, inject clean air with fixed flow rate.The existence of this gas can be accelerated the absorption of going of some other organic compound.
Through injecting the non-reactive gas of cleaning, the pressure in the chamber preferably returns normally, for example the neutral gas of air or picture nitrogen or argon.
In order further to improve performance, ammonia and sulphate residues remove method and not only can use after last cleaning, also can be used in before the cleaning other and relate to after the manufacturing step of sulphate residues use, for example the demoulding step.
Another object of the present invention is a kind of equipment that is used to realize said method, comprising:
-comprise the sealed chamber of at least one photomask;
-be used for creating and keep the unit of bleeding of the vacuum of said chamber;
-be used for keeping being placed in the system of at least one photomask of said sealed chamber;
-infrared radiation device;
-gas injection system.
Said maintenance system handles when can advantageously be designed to realize a plurality of photomask.
In a variant embodiment of said equipment, the ripple that the reflection of the inwall of said chamber is launched.
In another variant embodiment, said gas injection system comprises one or more spraying type syringes.
In another variant embodiment, said gas injection system comprises one or more particulate filters.
Said equipment can also comprise the pressure-measuring device that is used to check the pressure in the said chamber.
Said equipment can also comprise the hygrosensor of the temperature that is used to measure said photomask.
Description of drawings
With reference to accompanying drawing, the description of the embodiment that below reading, provides as limiting examples, other features and advantages of the present invention will become obviously, wherein:
-Fig. 1 schematically shows each step of an embodiment of method of the present invention;
-Fig. 2 schematically shows a kind of exemplary approach of locating infrared radiation device about photomask;
-Fig. 3 shows and is suitable for carrying out the equipment that ammonia and sulphate residues remove step;
-Fig. 4 shows and is suitable for carrying out the modification that ammonia and sulphate residues remove the equipment of step;
The comparison of the residual sulfur hydrochlorate ratio in the photomask when-Fig. 5 is the manufacture process end.
Embodiment
Fig. 1 schematically shows an embodiment of photomask manufacturing approach of the present invention.The photomask manufacturing generally includes a plurality of steps.The substrate of for example being processed by the quartz that is coated with chromium 21 has been capped one deck resin 3, on this layer resin, duplicates by means of for example laser or electron beam and treats etched pattern (steps A).Step N is an etching step, and pattern is etched in the chromium layer 2 during this period.During step C, etched photomask is wet demoulding to remove resin 3 and from the secondary product of chemical reaction.The photomask that is produced is implemented with a plurality of continuous cleanings (step e), controlled step (step D and F) and the possible reparation step (step G) during the step D to G then.During step H, carry out last cleaning.Normally used clean conditions relates to use sulfate, and it must be removed before step I, and photomask is capped with protective film 4 in step I.This is because for the above reasons, must avoid fully sulfate occurring in the active region 5 of the photomask under film 4.
The step J that removes ammonia and sulphate residues that realizes the combination of infrared radiation and vacuum suction is placed between cleaning H and the film placement step I, thereby pollutant is removed from photomask, particularly the sulfate contamination thing.This step J comprises a plurality of operations, and it forms three different stages.
During the phase one, because photomask is in chamber, the gas in this chamber is drawn out of.During this part, controlled variable is the speed of evacuation.Pressure reduction slope is adjusted to and prevents water crystallization.Simultaneously, infrared radiation device is opened so that wavelength control system is regulated in advance.Thereby photomask is carried out infrared radiation accelerate pollutant removal, bleed simultaneously and proceed.
Subordinate phase is carried out under fixed temperature and pressure.Three parameters, promptly temperature, pressure and IR wavelength are complementary.The wavelength of infrared radiation is adjusted to the absorption of going that realizes ammonia and sulphate residues.Pressure enables control and goes to adsorb threshold value, and temperature is controlled to enable to adjust wavelength.
When infrared radiation was closed, the phase III started from when chamber has been less than or equal about 50 ℃ temperature, increasing the pressure in the chamber.Low pressure in the chamber helps to reduce temperature.The controlled variable in this stage is a temperature.Pressure control in the chamber also can be used for controlling cooling.The increase of pressure is to utilize the non-reactive gas of cleaning to realize.When end cycle, the pressure of the clean air of being forced in a bit of time a little more than atmospheric pressure, thereby strengthen the absorption of the lip-deep clean air of photomask, this makes it avoid external contamination when from chamber, shifting out.Photomask is cooled to and is not more than 50 ℃ so that the temperature of this chamber approaches environment temperature, thereby prevents the absorption once more of the gas in the atmosphere, and this can take place when temperature reduces.
In another embodiment, this step J that removes ammonia and sulphate residues also can carry out before cleaning H, especially after relating to some step that continues the preservation sulphate residues.For example, can between demoulding step C and controlled step D, further be provided with and remove step J '.
Fig. 2 shows the example that the infrared radiation 20 that is produced by infrared facility 21 reflexes to the inner reflective wall 23 a kind of mode on the two of photomask 22 and sealed chamber 24.For example, this heating unit can be placed on the photomask and/or under, or between photomask two-layer.
The use of infrared radiation since its about the selectivity of the chemicals that will remove but preferred, and the performance in its vacuum is very high.Through suitably selecting the characteristic of infrared radiation 20, its wavelength for example, the degree of depth of going to adsorb can change.Its wavelength is referred to as the infrared radiation ripple of " shortwave " and will deeper injects in the material than " medium wave " or " long wave ", and this is more effective for the surface.
Can apply the temperature less than 300 ℃, for example approach 80 ℃, this can not damage photomask.Advantageously, use and send out control based on the infrared radiation of hash, promptly apply voltage V and no-voltage continuously, this enables to reach the ir radiant power peak value.This control enables to control the heating of photomask and the characteristic (wavelength) that can not lose infrared radiation.This control also enables to change the wavelength of infrared radiation.Through uniting based on the infrared radiation emission control of hash and repairing and revise the infrared radiation wavelength, can realize the absorption of going of photomasks with a plurality of degree of depth in the material.
For infrared energy is put on photomask, another kind of method is used and is coupled to the microwave maker with the metal bar of radiated infrared ripple.
In embodiments of the invention shown in Figure 3, photomask 31 (it does not also have film) is placed in by means of bleeding unit 33 and keeps in the sealed chamber 32 of vacuum.Pressure-measuring device 34 enables to check the pressure in the chamber 32.Photomask is placed on overlapping 35 and they are by non-metallic gasket 36 supports.In this situation, carry out infrared radiation by means of 37 pairs of photomasks of the equipment on the wall that is placed on chamber 32, for example equipment 37 for example is above-mentioned microwave equipment.Equipment 37 is operated based on photomask 31 temperature of being measured by the hygrosensor 39 of association by radiation control loop 38.The geometry of radiating element 37 and uniform, the optimum effect of arranging to be selected to the whole surface that to realize striding photomask 31.
Advantageously, the surface of chamber 32 can be by polishing mechanically or electrolytically, to strengthen the reflection of infrared radiation to the photomask 31.The shape of chamber 32 also enables to distribute equably infrared radiation.
One of major limitation of said equipment is that the enforcement of method can not produce particulate.Here it is, and gas injection system 40 comprises the reason of at least one spraying type syringe 41, and this syringe enables to be decreased to the injection speed in the vacuum chamber 32.Injecting systems 40 also is equipped with particulate filter 42.Advantageously, injecting systems 40 comprises one or more spraying type gas syringes 41, and it prevents gas turbulence when chamber 32 is got back to atmospheric pressure.Chamber returns the step of atmospheric pressure to carry out according to following mathematical equation: y=ax
2+ b, wherein y is that flow velocity and x are pressure.This process allows to carry out the low speed injection with low pressure, because particle contamination is under low pressure higher.
During ammonia and sulphate residues removed step, degasification measuring unit 43 was used to guarantee that through following the tracks of following at least one parameter operation correctly carries out:
-gas partial pressure;
The restriction pressure of-the unit 33 of bleeding;
The weight of-photomask 31;
The power that the wall 32 of-chamber is reflected.
Bleed unit 33, injecting systems 40 and degasification measurement mechanism 43 is connected to programmable logic controller (PLC) PLC 44.
With reference now to Fig. 4,, it shows another embodiment of the equipment 31 that is suitable for carrying out the step that removes ammonia and sulphate residues, and wherein radiation device 47 is placed in outside the vacuum chamber 48.The interface 49 of being located at the for example window in the wall of chamber 48 makes that wave energy is enough to be passed through towards photomask 31.The material chosen that constitutes the interface 49 between radiation device 47 and the photomask 31 is very crucial, throws into question because this material must allow to go to the dissipation of the radiation that the ripple of photomask 31 passes through and can not carry owing to them.Advantageously select quartzy.
Fig. 5 has provided the comparative result of the ratio of the residual sulfur hydrochlorate in the measuring light mask, as utilizes the ion chromatography process measured.The ratio 50a of sulfate, 51a, 52a come from the photomask clean operation that utilizes three different clean method modification I, II, III and carry out.
When accomplishing ratio 50b, 51b, the 52b that obtains sulfate when removing step according to an embodiment of the invention, it is after the cleaning in each of this three modification.Comparative result has shown the validity that removes step of the sulfate of photomask.Photomask manufacturer is the sulfate ratio that realizes less than 1ppbv (by volume calculating parts per billion) for the current goal of 193nm technology, thereby can not bring any crystal growing problem to their client.Value 50b, 51b, 52b that Fig. 5 explanation utilizes the present invention to realize are lower than this target mostly.
Claims (7)
1. method that is used to make photomask; Comprise that at least one step that cleans said photomask and at least one are placed in the step on the said photomask with protective film; And comprise that at least one removes the step of ammonia and sulphate residues between step that cleans said photomask and protective film placement step, it comprises:
-said photomask is placed sealed chamber;
-through extracting the gas that comprises in the sealing chamber out, in the sealing chamber, produce low pressure;
-utilize infrared radiation emission control that said photomask is exposed to infrared radiation based on hash, wherein said photomask is heated with the temperature between 50 ℃ to 300 ℃;
-stop said infrared radiation;
-waited for that before recovering atmospheric pressure the temperature up to said photomask is no more than 50 ℃;
-recover the atmospheric pressure of said sealed chamber through the non-reactive gas of injecting cleaning; With
-said photomask is removed from said sealed chamber.
2. method according to claim 1, wherein, gas bleeding in a period of time of 20 minutes to five hours.
3. method according to claim 1 wherein, is injected clean air with fixing flow velocity in gas bleeding.
4. method according to claim 1 also comprises this step: before the step of the said photomask of cleaning and after another manufacturing step, remove ammonia and sulphate residues.
5. one kind is used to realize the equipment according to the method for claim 1, comprising:
-comprise the sealed chamber of at least one photomask;
-be used in said sealed chamber producing and keeping the unit of bleeding of vacuum;
-be used to keep being placed in the system of at least one the first mask in the said sealed chamber;
-infrared radiation device;
-gas injection system.
6. equipment according to claim 5, wherein, the ripple that the reflection of the inwall of said sealed chamber is launched.
7. equipment according to claim 5, wherein, said gas injection system comprises at least one spraying type syringe and at least one particulate filter.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0851427 | 2008-03-05 | ||
| FR0851427 | 2008-03-05 | ||
| PCT/FR2008/052425 WO2009112655A1 (en) | 2008-03-05 | 2008-12-29 | Method of fabricating photomasks and device for implementing it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101925860A CN101925860A (en) | 2010-12-22 |
| CN101925860B true CN101925860B (en) | 2012-12-12 |
Family
ID=40886698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008801255744A Expired - Fee Related CN101925860B (en) | 2008-03-05 | 2008-12-29 | Method of fabricating photomasks and device for implementing the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5372966B2 (en) |
| KR (2) | KR101253825B1 (en) |
| CN (1) | CN101925860B (en) |
| WO (1) | WO2009112655A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2962198B1 (en) * | 2010-06-30 | 2014-04-11 | Alcatel Lucent | DEVICE FOR DRYING A PHOTOMASK |
| DE102019110706A1 (en) | 2018-09-28 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | METHOD FOR PRODUCING EUV PHOTO MASKS |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1494956A (en) * | 2002-09-12 | 2004-05-12 | Asml | Cleaning method for removing particles from surface, cleaning equipment and photo-engraving projection equipment |
| CN1996142A (en) * | 2005-12-22 | 2007-07-11 | 奇梦达股份公司 | Device for the storage and use of at least one photomask for lithographic projection and method for using the device in an exposure installation |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355474A (en) * | 1976-10-29 | 1978-05-19 | Kyoritsu Kogyo | Method of treating ammonium peroxysulfate waste liquid |
| JP3266156B2 (en) * | 1990-09-19 | 2002-03-18 | 株式会社ニコン | Illumination light source device and exposure device |
| JPH0521411A (en) * | 1991-07-12 | 1993-01-29 | Fujitsu Ltd | Surface processing method and surface processor |
| US6279249B1 (en) * | 1999-12-30 | 2001-08-28 | Intel Corporation | Reduced particle contamination manufacturing and packaging for reticles |
| WO2001097270A2 (en) * | 2000-06-14 | 2001-12-20 | Applied Materials, Inc. | Substrate cleaning apparatus and method |
| JP2002196478A (en) * | 2000-12-27 | 2002-07-12 | Semiconductor Leading Edge Technologies Inc | Photomask unit, photomask device, projection exposure device, projection exposure method and semiconductor device |
| JP2005134666A (en) * | 2003-10-30 | 2005-05-26 | Hoya Corp | Photomask and method for forming video device |
| JP4564742B2 (en) * | 2003-12-03 | 2010-10-20 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2005274770A (en) * | 2004-03-23 | 2005-10-06 | Sony Corp | Mask storing container and mask treatment method |
| JP4475510B2 (en) * | 2004-06-25 | 2010-06-09 | Ｈｏｙａ株式会社 | Lithographic mask manufacturing method, lithography mask, and lithography mask exposure method |
| WO2006101315A1 (en) * | 2005-03-21 | 2006-09-28 | Pkl Co., Ltd. | Device and method for cleaning photomask |
| US20060243300A1 (en) * | 2005-04-27 | 2006-11-02 | Patrick Klingbeil | Method for cleaning lithographic apparatus |
| US7927969B2 (en) * | 2006-03-08 | 2011-04-19 | Stmicroelectronics S.A. | Cleaning of photolithography masks |
| US7993464B2 (en) * | 2007-08-09 | 2011-08-09 | Rave, Llc | Apparatus and method for indirect surface cleaning |
-
2008
- 2008-12-29 KR KR1020107017316A patent/KR101253825B1/en active IP Right Grant
- 2008-12-29 WO PCT/FR2008/052425 patent/WO2009112655A1/en active Application Filing
- 2008-12-29 CN CN2008801255744A patent/CN101925860B/en not_active Expired - Fee Related
- 2008-12-29 JP JP2010549172A patent/JP5372966B2/en active Active
- 2008-12-29 KR KR1020127034224A patent/KR101253948B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1494956A (en) * | 2002-09-12 | 2004-05-12 | Asml | Cleaning method for removing particles from surface, cleaning equipment and photo-engraving projection equipment |
| CN1996142A (en) * | 2005-12-22 | 2007-07-11 | 奇梦达股份公司 | Device for the storage and use of at least one photomask for lithographic projection and method for using the device in an exposure installation |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101253948B1 (en) | 2013-04-16 |
| KR101253825B1 (en) | 2013-04-12 |
| CN101925860A (en) | 2010-12-22 |
| JP5372966B2 (en) | 2013-12-18 |
| KR20100101003A (en) | 2010-09-15 |
| JP2011513783A (en) | 2011-04-28 |
| KR20130016404A (en) | 2013-02-14 |
| WO2009112655A1 (en) | 2009-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7554103B2 (en) | Increased tool utilization/reduction in MWBC for UV curing chamber | |
| US7789965B2 (en) | Method of cleaning UV irradiation chamber | |
| US20090258159A1 (en) | Novel treatment for mask surface chemical reduction | |
| JP5471514B2 (en) | Light processing equipment | |
| TW200421018A (en) | Method and apparatus for recycling gases used in a lithography tool | |
| KR102402035B1 (en) | mask having a pellicle, pellicle repairing apparatus, and substrate manufacturing equipment | |
| JP2004172626A (en) | Apparatus for separating light source gas from gas in main chamber in lithography equipment, and its method | |
| KR20080026069A (en) | Method of cleaning uv irradiation chamber | |
| US7927969B2 (en) | Cleaning of photolithography masks | |
| CN101925860B (en) | Method of fabricating photomasks and device for implementing the same | |
| WO2008097462A1 (en) | Plenum reactor system | |
| CN103246159B (en) | Device for removing vaporific defects on mask and method thereof | |
| US8383296B2 (en) | Method for manufacturing photomasks and device for its implementation | |
| US20060243300A1 (en) | Method for cleaning lithographic apparatus | |
| JP2006245254A (en) | Exposure device, exposure method, and method for manufacturing device having fine pattern | |
| CN104865700A (en) | ArH cleaning method for carbon pollution on surface of optical element | |
| KR102469600B1 (en) | Film formation device and film formation method | |
| CN113412166B (en) | Method for cleaning vacuum chamber, method for vacuum processing substrate, and apparatus for vacuum processing substrate | |
| TWI642103B (en) | In-situ euv collector cleaning utilizing a cryogenic process | |
| JP2004218047A (en) | Method of producing optical element | |
| KR20080084371A (en) | Method for fabricating in photo mask | |
| JP2003257839A (en) | Mask structure, method and system for exposure, method of manufacturing semiconductor device, and cassette and chamber for keeping mask | |
| KR20090113715A (en) | Method for exposure using extreme ultra violet with tungsten halogen lamp | |
| JP2004170802A (en) | Reticle drying apparatus, exposure apparatus, semiconductor device and exposure method | |
| JP2004134626A (en) | Process for removing organic layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121212 Termination date: 20131229 |