CN103246159A - Device for removing vaporific defects on mask and method thereof - Google Patents
Device for removing vaporific defects on mask and method thereof Download PDFInfo
- Publication number
- CN103246159A CN103246159A CN2012100290626A CN201210029062A CN103246159A CN 103246159 A CN103246159 A CN 103246159A CN 2012100290626 A CN2012100290626 A CN 2012100290626A CN 201210029062 A CN201210029062 A CN 201210029062A CN 103246159 A CN103246159 A CN 103246159A
- Authority
- CN
- China
- Prior art keywords
- mask
- vaporific defective
- vaporific
- defective
- removal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A device for removing vaporific defects on a mask comprises a cavity, a first intake channel and a first exhaust channel which are positioned on the cavity, and a mask clamping device and a laser light source which are arranged inside the cavity. The first intake channel, the first exhaust channel and the laser light source are disposed at the same side of the mask clamping device. A method for removing vaporific defects on a mask comprises the following steps: loading a mask, on which vaporific defects are about to be removed, onto the mask clamping device, wherein a protection film is loaded on the above mask and the protection film is arranged opposite to the laser light source; heating the temperature of the mask, on which vaporific defects are about to be removed, to a predetermined temperature; providing a protective gas for the cavity through the first intake channel; and irradiating the mask by laser. The device and the method for removing vaporific defects on the mask are adopted to shorten the period for removing vaporific defects and reduce process cost.
Description
Technical field
The present invention relates to a kind of devices and methods therefor of technical field of semiconductors, concrete, the present invention relates to a kind of device and method of removing vaporific defective on the mask.
Background technology
Because semiconductor devices becomes more and more littler, the size of the pattern that forms at wafer is also along with reducing.In order to form fine pattern, adopt the photoetching process of mask to obtain using.In photoetching process, photoresist is coated on the material layer, will form the pattern that needs on this material layer, and light is radiated on a part of photoresist layer by having mask predetermined, the light shield pattern.Subsequently, remove the radiant section of photoresist layer by the developing process that adopts developing solution, to form photoresist layer pattern.After this, photoresist layer pattern makes the exposed portions of material layer be got rid of as the etching technics of etching mask by employing photoresist pattern as being used for exposing a part of material layer.Like this, can form the pattern of material layer, corresponding to the light shield pattern of mask.
Using mask to carry out in the process of wafer printing, after mask is by litho machine laser irradiation certain hour, especially under the irradiation of 193nm or the following wavelength light source of 193nm, on the phase shift mask version, can generate so-called vaporific defective (haze) gradually.Vaporific defective occurs with various forms, such as the Powdered defective of off-white color that has on the quartz glass of the mask back side, and the snowflake shape defective of the similar crystal of chromium (Cr) or molybdenum silicon (MoSi) pattern line both sides, the crystal salt on the diaphragm surface of mask, etc.These defectives are harmful to, and they might cause the reduction greatly of chip yield.Because these vaporific defective transmittances are lower, with the influence transmittance in exposure time, thereby influence photoetching quality.
Vaporific defective is very common in current photoetching process production run, and is inverse relation with exposure wavelength.Along with the continuous development of semiconductor technology, lithographic wavelength shortens day by day, and the occurrence frequency of vaporific defective is corresponding greatly to be improved.Vaporific defective is the epoch of 365nm in lithographic wavelength, does not have too much influence basically.When 248nm, this class defective only has influence on about 5% phase shift mask version.Yet arrived the 193nm photoetching, be subjected to its phase shift mask version that influences up to 15%～20%.
Vaporific defective is considered to be in the zone that ion residues is arranged on the mask; photochemically reactive result; also may be caused by foreign matter; such as diaphragm (Pellicle); the gas that sticker distributes; the packing box of transportation usefulness, the gas in the packaging bag, pollutant of wafer manufacturing plant environment etc.
Existing technology may further comprise the steps during vaporific defective on removing mask: at first, remove the diaphragm on the mask; Then, clean described mask; Then; check that whether the mask after cleaning comprises vaporific defective, when not comprising vaporific defective on the mask after the described cleaning, loads diaphragm at described mask; when comprising vaporific defective on the mask after the described cleaning, clean described mask again.Owing to need to remove earlier the diaphragm on the mask during the vaporific defective of existing technology on removing mask, and reload diaphragm after cleaning, the cycle is longer when causing the vaporific defective of existing technology on removing mask.Simultaneously, the process of removing vaporific defective on the mask can expend a large amount of diaphragms, and then cost is higher when causing removing on the mask vaporific defective.In addition, removing the mask upper protective film and cleaning in the process of described mask, remaining on the mask cleaning solution and also can introduce new ion, forming new vaporific defective at mask, the effect of vaporific defective on the mask is removed in influence.
In being the Chinese patent application of 200810115965.X, application number can find more information of removing vaporific defective method on the mask about prior art.
Therefore, how to provide the technology of vaporific defective on a kind of simple and effective removal mask, just become problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves provides a kind of device and method of removing vaporific defective on the mask, the cycle is longer when improving existing technology and removing on the mask vaporific defective, the cost problem of higher improves the efficient of vaporific defective on the removal mask and the removal effect of vaporific defective.
For addressing the above problem, the invention provides a kind of device of removing vaporific defective on the mask, the mask clamping device and the LASER Light Source that comprise cavity, be positioned at first intake channel and first exhaust channel on the cavity and be arranged at cavity, wherein, described first intake channel, first exhaust channel and LASER Light Source are in the same side of described mask clamping device.
Optionally, the device of vaporific defective also comprises first gas source that is connected with described first intake channel on the described removal mask, to provide blanket gas to described cavity.
Optionally, described blanket gas is nitrogen or inert gas.
Optionally, the device of vaporific defective also comprises second intake channel and second exhaust channel on the described removal mask, described second intake channel and second exhaust channel are positioned on the cavity and are positioned at the opposite side of described mask clamping device, and be relative with described LASER Light Source.
Optionally, the device of vaporific defective also comprises second gas source that is connected with described second intake channel on the described removal mask, to provide heated air to described cavity.
Optionally, described heated air is air.
Accordingly, the present invention comprises that also a kind of device that utilizes vaporific defective on the above-mentioned removal mask removes the method for vaporific defective on the mask, comprising:
To wait that the mask of removing vaporific defective is loaded on the mask clamping device, be loaded with diaphragm on the described mask of waiting to remove vaporific defective, described diaphragm is relative with LASER Light Source;
Make the described temperature of waiting to remove the mask of vaporific defective reach predetermined temperature, and provide blanket gas by first intake channel to cavity, by the described mask of waiting to remove vaporific defective of laser irradiation.
Optionally, described predetermined temperature is in 80 ℃～160 ℃ scopes.
Optionally, described blanket gas is nitrogen or inert gas.
Optionally, the interior pressure of described cavity is 1.01 * 10
5Pascal.
Optionally, described Wavelength of Laser is in 300～600nm scope.
Optionally, the irradiation of described laser waits to remove time of mask of vaporific defective in 2 hours～5 hours scopes.
Optionally, the method for vaporific defective also comprises to described cavity on the described removal mask provides heated air, makes the described temperature of waiting to remove the mask of vaporific defective reach predetermined temperature.
Optionally, described heated air is air.
Optionally, the flow velocity of described heated air is in 50～150 meter per second scopes.
Optionally, the temperature of described heated air is in 100 ℃～200 ℃ scopes.
Compared with prior art, the present invention has the following advantages:
(1) the present invention is on the basis of removal diaphragm not; treat the mask of removing vaporific defective and carry out the laser irradiation; make vaporific defective change into ion and break away from from mask; and then the vaporific defective on the removal mask; avoid because repeatedly loading and removal diaphragm cause technology cost problem of higher; effectively shorten the cycle of removing vaporific defective on the mask, reduced the cost of removing vaporific defective on the mask, improved efficient and the removal effect of removing vaporific defective on the mask.
(2) in addition; utilizing the present invention to remove on the mask method of vaporific defective removes in the vaporific defective process; do not need repeatedly removal and load diaphragm; avoid at the removal diaphragm or load in the diaphragm process binder remaining in mask and forming new defective, improved the effect of removing vaporific defective on the mask.
Description of drawings
Fig. 1 removes the synoptic diagram of device one embodiment of vaporific defective on the mask for the present invention;
Fig. 2 utilizes the device of removing vaporific defective on the mask among Fig. 1 to remove the process flow diagram of the method for vaporific defective on the mask.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Just as described in the background section; utilize existing when removing on the mask vaporific defective method and removing on the mask vaporific defective; need the diaphragm on the first removal mask; then mask is cleaned and check on the mask after the cleaning whether have vaporific defective; when also having vaporific defective on the mask; again clean described mask and on it, do not have vaporific defective, last, reload diaphragm at described mask.
Because existing technology needs repeatedly removal and loads diaphragm in the vaporific defective process on removing mask, when causing on removing mask vaporific defective the cycle longer, and cause the technology cost higher because needs expend a large amount of diaphragms.
At the problems referred to above; the inventor provides a kind of device of removing vaporific defective on the mask; can remove vaporific defective on the mask on the basis of removal mask upper protective film not; removal and load diaphragm repeatedly when avoiding on removing mask vaporific defective; shorten the cycle of removing vaporific defective on the mask, reduced the technology cost.
Fig. 1 removes the synoptic diagram of vaporific defective device one embodiment on the mask for the present invention.The device of vaporific defective comprises on the described removal mask plate: cavity, the mask clamping device 101 and the LASER Light Source 109 that are positioned at first intake channel 111 and first exhaust channel 113 on the cavity and are arranged at cavity, wherein, described first intake channel 111, first exhaust channel 113 and LASER Light Source 109 are in the same side of described mask clamping device 101, and namely upper cavity 102.
In the present embodiment, described first intake channel 111 and first exhaust channel 113 are arranged at the both sides of upper cavity 102 respectively; In other embodiments, described first intake channel 111 and first exhaust 113 can also be arranged at the top of described upper cavity 102, and the particular location in upper cavity 102 does not limit to first intake channel 111 and first exhaust channel 113 in the present invention.
Can also be formed with second intake channel 115 and second exhaust channel 117 on the described cavity, described second intake channel 115 and second exhaust channel 117 are positioned at the opposite side, relative with described LASER Light Source 109 of mask clamping device 101, and namely described second intake channel 115 and second exhaust channel 117 are positioned at lower chamber 103.Described upper cavity 102 and lower chamber 103 have constituted the cavity of removing the device of vaporific defective on the mask among Fig. 1.
In the present embodiment, described second intake channel 115 is arranged at the bottom of described lower chamber 103, and two second exhaust channels 117 are arranged at second intake channel, 115 both sides respectively.In other embodiments, described second intake channel 115 and second exhaust channel 117 can also place described lower chamber 103 both sides, and the particular location in lower chamber 103 does not limit to second intake channel 115 and second exhaust channel 117 in the present invention.
In specific embodiment; vaporific defective device can also comprise the first gas source (not shown) that is connected with described first intake channel 111 on the described removal mask; to provide blanket gas to described upper cavity 102; described blanket gas is nitrogen or inert gas, and the pressure in the upper cavity 102 is a standard atmospheric pressure (1.01 * 10
5Pascal).Described blanket gas can also be through heating.
In other embodiments, the device of vaporific defective can also comprise the second gas source (not shown) that is connected with described second intake channel 115 on the described removal mask, to provide heated air to described lower chamber 103.Described heated air can be air.At this moment, described blanket gas also can be without heating.
Need to prove that when described mask clamping device 101 loadings remained to remove the mask 305 of vaporific defective, upper cavity 102 was a confined space.Removing on the mask 305 in the vaporific defective process by removing on the mask vaporific defective device among Fig. 1, the diaphragm 307 that loads on the described mask 305 does not need removal.
Concrete; after mask 305 is loaded on described mask clamping device 101; after providing blanket gas by first intake channel 111 to described upper cavity 102; the former air that is arranged in described first cavity 102 is discharged by first exhaust channel 113, reduces mask 305 ammonia radical ion (NH on every side
4 +), chlorion (Cl
-), carbanion (CO
3 2-) and sulfate ion (SO
4 2-) concentration, be beneficial to the decomposition of vaporific defective.
Simultaneously, vaporific defective device is removed in the vaporific defective process on the removal mask in by Fig. 1, and principal ingredient is NH
4Cl, (NH
4)
2CO
3Or (NH
4)
2SO
4Vaporific defective resolve into NH
4 +, Cl
-, CO
3 2-And SO
4 2-After, part NH
4 +, Cl
-, CO
3 2-And SO
4 2-Can discharge upper cavities 102 by first exhaust channel 113 with blanket gas, efficient is higher when making on the described removal mask vaporific defective device remove vaporific defective.
Preferably, described second intake channel 115 be positioned at mask 305 under, increase the surface of contact of heated air and mask 305, the efficiency of heating surface of raising heated air.Make described mask 305 temperature of waiting to remove vaporific defective reach predetermined temperature by heated air after, the efficient that LASER Light Source 109 irradiation masks 305 are removed vaporific defective is higher.
In other embodiments; vaporific defective device is removed in the process of vaporific defective on the removal mask in by Fig. 1; also the device of removing vaporific defective on the mask among Fig. 1 can be inverted; be about to remove upper cavity 102 and the location swap of lower chamber 103 with respect to mask clamping device 101 in the device of vaporific defective on the mask; accordingly, the upper surface (i.e. the surface that does not contact with mask 305) that makes diaphragm 307 down.The device of vaporific defective can prevent effectively that dust granules in the upper cavity 202 from dropping on diaphragm 307 and pollution protection film 307 is avoided carrying out the formed photoresist layer pattern of influence in the photo-etching technological process at later use mask 305 on the removal mask after the inversion.
With reference to figure 2, remove the process flow diagram that vaporific defective device on the mask is removed the method for vaporific defective on the mask for utilizing Fig. 1, said method comprising the steps of:
Step S1 will wait that the mask of removing vaporific defective is loaded on the mask clamping device, is loaded with diaphragm on the described mask of waiting to remove vaporific defective, and described diaphragm is relative with LASER Light Source;
Step S2 makes the described temperature of waiting to remove the mask of vaporific defective reach predetermined temperature, and provides blanket gas by first intake channel to cavity, by the described mask of waiting to remove vaporific defective of laser irradiation.
Remove the method for vaporific defective on the mask below in conjunction with the device explanation the present invention who removes vaporific defective on the mask among Fig. 1.
At first, will wait that the mask 305 of removing vaporific defective is loaded on the mask clamping device 101 together with the diaphragm 307 that loads on the mask 305.
Wherein, described diaphragm 307 is relative with LASER Light Source 109 light sources.
Optionally, before mask 305 being carried out vaporific defective removal, also comprise the quantity by vaporific defective on the defects detection equipment inspection mask 305, when the more or vaporific defects count of vaporific defective on the mask 305 during greater than the error allowed band, will comprise the mask that the mask 305 of vaporific defective is removed as pending vaporific defective.
Then, in lower chamber 103, provide heated air by second intake channel 115 that is connected with the second gas source (not shown), so that the temperature of mask 305 reaches predetermined temperature.
Concrete, described heated air can be air, and the flow velocity of described heated air is in 50～150 meter per second scopes, and the temperature of described heated air is in 100 ℃～200 ℃ scopes; Described predetermined temperature is in 80 ℃～160 ℃ scopes.
Preferably, described second intake channel 115 to increase the surface of contact of heated air and mask 305, improves the efficiency of heating surface of heated air over against mask 305 lower surfaces (not loading diaphragm 307 1 sides).
When the temperature of mask 305 reaches predetermined temperature, provide blanket gas by first intake channel 111 that is connected with the first gas source (not shown) to described upper cavity 102.Wherein, described blanket gas can be nitrogen or inert gas, and the pressure in the described upper cavity 102 is 1.01 * 10
5Pascal.Because the former air that is arranged in described upper cavity 102 is discharged by first exhaust channel 113, effectively reduces mask 305 ammonia radical ion (NH on every side
4 +), chlorion (Cl
-), carbanion (CO
3 2-) and sulfate ion (SO
4 2-) concentration, be beneficial to the decomposition of vaporific defective.
Simultaneously, by the described mask 305 of LASER Light Source 109 irradiations in the upper cavity 102.Wherein, described Wavelength of Laser is in 300～600nm scope, and the irradiation of described laser waits to remove time of mask 305 of vaporific defective in 2 hours～5 hours scopes.
Because the energy of laser adds that the heat energy of mask 305 will be higher than the bond energy of most chemical bonds, principal ingredient is NH on the mask 305
4Cl, (NH
4)
2CO
3Or (NH
4)
2SO
4Vaporific defective be broken down into NH
4 +, Cl
-, CO
3 2-And SO
4 2-, part NH
4 +, Cl
-, CO
3 2-And SO
4 2-Discharge upper cavity 102 with blanket gas by first exhaust channel 113, removed the vaporific defective on the mask 305.
Because above-mentioned steps does not need the diaphragm 307 on the removal mask 305 in the process of removing vaporific defective; avoid on removing mask 305 in the vaporific defective process repeatedly removal and load diaphragm 307; shortened the cycle of removing vaporific defective on the mask; simultaneously can save a large amount of diaphragms, reduce the technology cost.
In addition, because above-mentioned steps do not need repeatedly removal and load diaphragm 307, avoid at removal diaphragm 307 or load in diaphragm 307 processes binder remaining in mask 305 and forming new defective, further improved the removal effect of vaporific defective.
Optionally, after described mask 305 being carried out the laser irradiation, also need to remove by the defects detection equipment inspection effect of vaporific defective on the mask 305, as the quantity of vaporific defective on no vaporific defective or the mask on the mask 305 in the error allowed band, then finish the removal of vaporific defective on this mask 305, mask 305 is taken out from cavity; The quantity of vaporific defective exceeds the error allowed band on the more or mask 305 as vaporific defective on the mask 305, then carrying out vaporific defective again according to the method for removing vaporific defective on the mask among Fig. 2 removes, the quantity of vaporific defective is in the error allowed band on no vaporific defective or mask 305 on the mask 305, finish the removal of vaporific defective on this mask 305, mask 305 is taken out from cavity.
To sum up; the invention provides a kind of device of removing vaporific defective on the mask; and use said apparatus to remove the method for vaporific defective on the mask; make vaporific defective change into ion to break away from from mask by mask being carried out laser irradiation; and then the vaporific defective on the removal mask; avoid because repeatedly removal and loading diaphragm cause technology cost problem of higher; effectively shorten the cycle of removing vaporific defective on the mask, improved efficient and the removal effect of removing vaporific defective on the mask.
In addition; the present invention removes the method for vaporific defective on the mask in removing vaporific defective process; do not need repeatedly removal and load diaphragm; avoid at the removal diaphragm or load in the diaphragm process binder remaining in mask and forming new defective, improved the effect of removing vaporific defective on the mask.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (16)
1. device of removing vaporific defective on the mask, it is characterized in that, the mask clamping device and the LASER Light Source that comprise cavity, be positioned at first intake channel and first exhaust channel on the cavity and be arranged at cavity, wherein, described first intake channel, first exhaust channel and LASER Light Source are in the same side of described mask clamping device.
2. the device of vaporific defective on the removal mask as claimed in claim 1 is characterized in that, also comprises first gas source that is connected with described first intake channel, to provide blanket gas to described cavity.
3. the device of vaporific defective on the removal mask as claimed in claim 2 is characterized in that described blanket gas is nitrogen or inert gas.
4. the device of vaporific defective on the removal mask as claimed in claim 1, it is characterized in that, also comprise second intake channel and second exhaust channel, described second intake channel and second exhaust channel are positioned on the cavity and are positioned at the opposite side of described mask clamping device, and be relative with described LASER Light Source.
5. the device of vaporific defective on the removal mask as claimed in claim 4 is characterized in that, also comprises second gas source that is connected with described second intake channel, to provide heated air to described cavity.
6. the device of vaporific defective on the removal mask as claimed in claim 5 is characterized in that described heated air is air.
7. an application rights requires in 1～6 the method for vaporific defective on each removal mask of removing the device of vaporific defective on mask, it is characterized in that, comprising:
To wait that the mask of removing vaporific defective is loaded on the mask clamping device, be loaded with diaphragm on the described mask of waiting to remove vaporific defective, described diaphragm is relative with LASER Light Source;
Make the described temperature of waiting to remove the mask of vaporific defective reach predetermined temperature, and provide blanket gas by first intake channel to cavity, by the described mask of waiting to remove vaporific defective of laser irradiation.
8. the method for vaporific defective on the removal mask as claimed in claim 7 is characterized in that, described predetermined temperature is in 80 ℃～160 ℃ scopes.
9. the method for vaporific defective on the removal mask as claimed in claim 7 is characterized in that described blanket gas is nitrogen or inert gas.
10. the method for vaporific defective on the removal mask as claimed in claim 7 is characterized in that, pressure is 1.01 * 10 in the described cavity
5Pascal.
11. the method for vaporific defective is characterized in that on the removal mask as claimed in claim 7, described Wavelength of Laser is in 300～600nm scope.
12. the method for vaporific defective is characterized in that on the removal mask as claimed in claim 7, the irradiation of described laser waits to remove time of mask of vaporific defective in 2 hours～5 hours scopes.
13. the method for vaporific defective is characterized in that on the removal mask as claimed in claim 7, also comprises to described cavity heated air is provided, and makes the described temperature of waiting to remove the mask of vaporific defective reach predetermined temperature.
14. the method for vaporific defective is characterized in that on the removal mask as claimed in claim 13, described heated air is air.
15. the method for vaporific defective is characterized in that on the removal mask as claimed in claim 13, the flow velocity of described heated air is in 50～150 meter per second scopes.
16. the method for vaporific defective is characterized in that on the removal mask as claimed in claim 13, the temperature of described heated air is in 100 ℃～200 ℃ scopes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210029062.6A CN103246159B (en) | 2012-02-09 | 2012-02-09 | Device for removing vaporific defects on mask and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210029062.6A CN103246159B (en) | 2012-02-09 | 2012-02-09 | Device for removing vaporific defects on mask and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103246159A true CN103246159A (en) | 2013-08-14 |
| CN103246159B CN103246159B (en) | 2015-04-29 |
Family
ID=48925764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210029062.6A Active CN103246159B (en) | 2012-02-09 | 2012-02-09 | Device for removing vaporific defects on mask and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103246159B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103698970A (en) * | 2013-12-19 | 2014-04-02 | 无锡中微掩模电子有限公司 | Metal residue defect repairing method of mask plate for integrated circuit |
| CN106019820A (en) * | 2016-07-22 | 2016-10-12 | 上海华力微电子有限公司 | Method for controlling degasification haze defects of masks |
| CN106292179A (en) * | 2016-09-12 | 2017-01-04 | 京东方科技集团股份有限公司 | A kind of mask plate cleaning device |
| CN107942616A (en) * | 2017-11-30 | 2018-04-20 | 上海华力微电子有限公司 | The apparatus and method for removing particle on mask |
| CN108957962A (en) * | 2018-07-10 | 2018-12-07 | 上海华力微电子有限公司 | A method of it is transformed by humidity and reduces light shield cloudy surface defect |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996142A (en) * | 2005-12-22 | 2007-07-11 | 奇梦达股份公司 | Device for the storage and use of at least one photomask for lithographic projection and method for using the device in an exposure installation |
| US20080202560A1 (en) * | 2006-12-29 | 2008-08-28 | Hynix Semiconductor Inc. | Method for Removing Haze in a Photo Mask |
| KR20110068355A (en) * | 2009-12-16 | 2011-06-22 | 엘지디스플레이 주식회사 | Apparatus for exposure including gas circulation system |
-
2012
- 2012-02-09 CN CN201210029062.6A patent/CN103246159B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996142A (en) * | 2005-12-22 | 2007-07-11 | 奇梦达股份公司 | Device for the storage and use of at least one photomask for lithographic projection and method for using the device in an exposure installation |
| US20080202560A1 (en) * | 2006-12-29 | 2008-08-28 | Hynix Semiconductor Inc. | Method for Removing Haze in a Photo Mask |
| KR20110068355A (en) * | 2009-12-16 | 2011-06-22 | 엘지디스플레이 주식회사 | Apparatus for exposure including gas circulation system |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103698970A (en) * | 2013-12-19 | 2014-04-02 | 无锡中微掩模电子有限公司 | Metal residue defect repairing method of mask plate for integrated circuit |
| CN106019820A (en) * | 2016-07-22 | 2016-10-12 | 上海华力微电子有限公司 | Method for controlling degasification haze defects of masks |
| CN106292179A (en) * | 2016-09-12 | 2017-01-04 | 京东方科技集团股份有限公司 | A kind of mask plate cleaning device |
| CN106292179B (en) * | 2016-09-12 | 2019-09-10 | 京东方科技集团股份有限公司 | A kind of mask plate cleaning device |
| CN107942616A (en) * | 2017-11-30 | 2018-04-20 | 上海华力微电子有限公司 | The apparatus and method for removing particle on mask |
| CN108957962A (en) * | 2018-07-10 | 2018-12-07 | 上海华力微电子有限公司 | A method of it is transformed by humidity and reduces light shield cloudy surface defect |
| CN108957962B (en) * | 2018-07-10 | 2021-05-21 | 上海华力微电子有限公司 | Method for reducing photomask fog surface defects through humidity transformation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103246159B (en) | 2015-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4802937B2 (en) | Photomask cleaning method | |
| CN103246159A (en) | Device for removing vaporific defects on mask and method thereof | |
| US9400425B2 (en) | Apparatus and method for cleaning photomask | |
| US6734443B2 (en) | Apparatus and method for removing photomask contamination and controlling electrostatic discharge | |
| KR100935763B1 (en) | Method of removing particle of pellicle | |
| TWI336100B (en) | Method and apparatus for solving mask precipitated defect issue | |
| CN102810500A (en) | Buffer units, substrate processing apparatuses, and substrate processing methods | |
| US8908150B2 (en) | Substrate processing method, manufacturing method of EUV mask, and EUV mask | |
| US7789964B2 (en) | Method for cleaning a surface of a photomask | |
| CN111913346A (en) | Photomask assembly and photoetching system | |
| JP2005244015A (en) | Aligner, optical cleaning method of optical element in aligner, and process for fabricating device having fine pattern | |
| JPH04125642A (en) | Defect correcting method for photomask | |
| CN110737175A (en) | Method for removing film particles before exposure of masks | |
| US20060243300A1 (en) | Method for cleaning lithographic apparatus | |
| CN103676459B (en) | Light shield apparatus | |
| JP2000286187A (en) | Projection aligner, mask structure used for the same, exposure method, semiconductor device manufactured using the projection aligner, and manufacture of the semiconductor device | |
| JP2005202135A (en) | Method for cleaning photomask, method for manufacturing photomask, and method for handling photomask | |
| KR20080001469A (en) | Method for reworking pellicle of photo mask | |
| CN105573051A (en) | Storage method of mask plate | |
| US20060236921A1 (en) | Method of cleaning a substrate surface from a crystal nucleus | |
| CN116931364A (en) | Stain removal method for mask | |
| KR20050001093A (en) | Photo mask for fabricating of semiconductor device | |
| TW202324495A (en) | Lithography method allowing the photomask to enter the lithography process in a protected state, thereby improving the yield rate of the semiconductor process | |
| KR20080084371A (en) | Method for fabricating in photo mask | |
| TW200949429A (en) | Method for manufacturing photomasks and device for its implementation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |