CN106019820A - Method for controlling degasification haze defects of masks - Google Patents
Method for controlling degasification haze defects of masks Download PDFInfo
- Publication number
- CN106019820A CN106019820A CN201610585192.6A CN201610585192A CN106019820A CN 106019820 A CN106019820 A CN 106019820A CN 201610585192 A CN201610585192 A CN 201610585192A CN 106019820 A CN106019820 A CN 106019820A
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- CN
- China
- Prior art keywords
- mask plate
- degassing
- exposure unit
- haze defect
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a method for controlling degasification haze defects of masks. The method includes the steps of firstly, arranging ultraviolet exposure units in mask storage machines; secondly, placing the masks in the airtight chambers of the ultraviolet exposure units; thirdly, using the ultraviolet exposure units to irradiate the masks.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of mask plate that controls takes off
The method of mist defect.
Background technology
In integrated circuit fabrication, 193nm/246nm lithographic process use mask plate in exposure process because of
For mask plate membrane degassing (pellicle outgassing) problem, a kind of haze defect can be generated and be distributed in mask
Version graph area, has the biggest risk can cause the repeated defect on wafer.To the yield of lithographic process it is
Challenge greatly.
In order to control this type of haze defect, usual way in the industry is for put mask plate when mask plate does not uses
In RSP (mask plate standard storage box), then RSP is placed on mask plate storage machine (purge stocker)
Middle use N2 or CDA (clean dry air, the compressed air of clean dried) gas carries out continual filling out
Fill protection, to provide a stable storage condition to prevent haze defect from producing.
But, showing from real data, membrane degassing haze defect is number after mask plate stores a period of time
Amount will sharply increase, and quantity can gradually decrease in exposure process frequently.Because membrane degassing continues
Exist, and the haze defect produced that deaerates can gradually volatilize in heating process, so in exposure process
Along with mask plate temperature raises, haze defect quantity persistently reduces；In storing process, mask plate temperature reduces,
Degassing haze defect quantity continues to increase.After mask plate has stored a period of time, the quantity of haze defect
Surprising stage can be reached, some wafers of early stage exposure are had the biggest defect risk.
Accordingly, it is desirable to be able to provide a kind of scheme effectively to control the degassing mist of the mask plate that lithographic process uses
Shape defect.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that Yi Zhongneng
The method enough efficiently controlling the degassing haze defect of the mask plate that lithographic process uses.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of mask plate that controls deaerates vaporific lacking
The method fallen into, including:
First step: arrange uv-exposure unit in mask plate storage machine；
Second step: mask plate is placed in uv-exposure unit airtight chamber；
Third step: utilize uv-exposure unit that mask plate is irradiated.
Preferably, uv-exposure unit configures nitrogen and fill protection device；And utilize purple at third step
Outer exposing unit is opened nitrogen and is filled protection device to store mask plate while being irradiated mask plate
Atmosphere in machine is controlled.
Preferably, uv-exposure unit, mask plate are disposed in airtight chamber.
Preferably, the area coverage of uv-exposure unit is more than the area of mask plate substrate, and at second step
In rapid, mask plate is placed on the central position of uv-exposure unit.
Preferably, in the second step, mask plate and uv-exposure unit distance are in preset distance
In the range of.
Preferably, described predetermined distance range is 5mm～50mm.
Preferably, uv-exposure unit is configured with device for monitoring temperature, is used for monitoring mask in processing procedure
The variations in temperature on version surface.
Preferably, uv-exposure unit includes the multiple uviol lamps being arranged side by side.
Preferably, outer lamp is the uviol lamp of 154nm～256nm wavelength.
Preferably, mask plate can be carried out cycle treatment with irradiation with predetermined period, it is also possible to before reuse
Carry out disposable treatment with irradiation.
The present invention adds special ultraviolet heating unit in the mask plate storage machine of mask plate, for covering
Corresponding strategy can being formulated during the storage management of film version, having always a demand for depositing to need not exposure in the regular period
The mask plate of storage, is transferred to ultraviolet heating unit and is irradiated processing, can make mask after certain interval of time
The degassing haze defect quantity on version surface is effectively controlled, when mask plate rewrites and puts into use, significantly
During the exposure of attenuating initial stage, haze defect causes the risk of wafer defect.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete
Understand and its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows and controls mask plate degassing haze defect according to the preferred embodiment of the invention
The flow chart of method.
Fig. 2 schematically shows and controls mask plate degassing haze defect according to the preferred embodiment of the invention
The schematic top plan view of method.
Fig. 3 schematically shows and controls mask plate degassing haze defect according to the preferred embodiment of the invention
The schematic side view of method.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent structure
Accompanying drawing may be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicate identical or
The label that person is similar to.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings to this
Bright content is described in detail.
In the 193nm photolithographic exposure epoch, how to control the mask haze defects impact on photolithographic exposure defect
Become crucial subject under discussion.On the one hand, after mask plate stores a period of time, haze defect quantity steeply rises；Separately
On the one hand, mask plate enables after storing again, and the initial stage wafer of exposure is affected pole by haze defect defect
Greatly, the risk producing wafer defect is higher.To this, the present invention is directed to mask plate degassing haze defect and be provided with
Effect control method so that the impact of haze defect use normal on mask plate is preferably minimized.
Specifically, the present invention increases in the mask plate storage machine of mask plate (especially 193nm mask plate)
Special ultraviolet heating unit, can formulate corresponding strategy during the storage for mask plate manages, right
Need not in regular period expose the mask plate having always a demand for storage, after certain interval of time, be transferred to ultraviolet
Heating unit is irradiated processing, and the degassing haze defect quantity on mask plate surface can be made to be effectively controlled,
When mask plate rewrites and puts into use, when significantly lowering initial stage exposure, haze defect causes the wind of wafer defect
Danger.
Fig. 1 schematically shows and controls mask plate degassing haze defect according to the preferred embodiment of the invention
The flow chart of method.Fig. 2 schematically shows and controls mask plate degassing according to the preferred embodiment of the invention
The schematic top plan view of the method for haze defect.Fig. 3 schematically shows according to the preferred embodiment of the invention
Control the schematic side view of the method for mask plate degassing haze defect.
As shown in Figure 1, Figure 2 and Figure 3, mask plate degassing is controlled according to the preferred embodiment of the invention vaporific scarce
The method fallen into includes:
First step S1: arrange uv-exposure unit 10 in mask plate storage machine,
Second step S2: (wherein, as shown in Figures 2 and 3, mask plate includes mask plate base by mask plate
Plate 20 and mask plate protecting film 30) it is placed in uv-exposure unit 10；
Preferably, uv-exposure unit 10, mask plate are disposed in airtight chamber, to keep environment
Homogeneity.
Preferably, the area coverage of uv-exposure unit 10 is more than the area of mask plate substrate 20, the completeest
All standing mask plate 20 needs the region irradiated.
Preferably, uv-exposure unit 10 includes the multiple uviol lamps 11 being arranged side by side.Such as, uviol lamp
11 is the uviol lamp of 154nm～256nm (157nm, 193nm and/or 248nm) wavelength.The most general
Mask plate a size of 152.4mm*152.4mm, considers cost factor, ultraviolet meeting in the case of use requires
The size of lamp may be selected to be 300mm*300mm.
Preferably, in second step S2, described mask plate is placed on the central position of uv-exposure unit 10
Put place.
Preferably, in second step S2, mask plate is in pre-with uv-exposure unit 10 distance
In set a distance scope (such as, between 5mm～50mm).It is further preferred that such as, at second step
In S2, mask plate and uv-exposure unit 10 distance are 20～30mm.Thus, ultraviolet is being ensured
While radiation response, it is possible to avoid the scratch risk in operation.
Third step S3: utilize uv-exposure unit 10 that mask plate is irradiated.Specifically, it is usually profit
With uv-exposure unit 10, mask plate substrate 20 is irradiated.
Preferably, uv-exposure unit configures nitrogen and fills protection device, can take away in processing procedure vaporific
The degassing product of defect volatile substance and other mask plates.Thus, uv-exposure list is utilized at third step S3
Unit 10 opens nitrogen and fills protection device to deposit mask plate while being irradiated mask plate substrate 20
Atmosphere in storage machine is controlled (and relevant degassing composition to be taken away and covering while making haze defect volatilization
Film version surface).
Preferably, at third step S3, utilize uv-exposure unit 10 that mask plate substrate 20 is irradiated
Time a length of 10 minutes.
Preferably, with predetermined period, mask plate can be carried out cycle treatment with irradiation (such as, to carry out once every day
Treatment with irradiation), it is also possible to carry out before reuse disposable treatment with irradiation (such as, after long-time storage,
The irradiation operation of 30 minutes is carried out) before reactivating.Mask plate deaerated haze defect with this control strategy
It is controlled.
Preferably, uv-exposure unit is configured with device for monitoring temperature, mask plate in processing procedure can be monitored
The variations in temperature on surface.
In the specific implementation, the method for described control mask haze defects can be according to each practice in factory
Formulate the strategy needing uv-exposure unit to irradiate, every how long needing to irradiate, irradiate how many times every time
Between, be adjusted on the parameter such as the amount of the distance of mask plate surface and uv-exposure unit, nitrogen cleaning gas.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ",
" second ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc., and not
It is intended to indicate that the logical relation between each assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment is also
It is not used to limit the present invention.For any those of ordinary skill in the art, without departing from skill of the present invention
In the case of art aspects, technical solution of the present invention is made many by the technology contents that all may utilize the disclosure above
Possible variation and modification, or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every without departing from this
The content of bright technical scheme, according to the present invention technical spirit to any simple modification made for any of the above embodiments,
Equivalent variations and modification, all still fall within the range of technical solution of the present invention protection.
Claims (10)
1. the method controlling mask plate degassing haze defect, it is characterised in that including:
First step: arrange uv-exposure unit in mask plate storage machine；
Second step: mask plate is placed in uv-exposure unit airtight chamber；Third step: utilize purple
Mask plate is irradiated by outer exposing unit.
The method of control mask plate the most according to claim 1 degassing haze defect, it is characterised in that
Uv-exposure unit airtight chamber configures nitrogen and fills protection device；And utilize ultraviolet to expose at third step
Light unit is opened nitrogen and is filled protection device so that in mask plate storage machine while being irradiated mask plate
Atmosphere be controlled.
The method of control mask plate the most according to claim 1 and 2 degassing haze defect, its feature exists
In, uv-exposure unit and mask plate are disposed in airtight chamber.
The method of control mask plate the most according to claim 1 and 2 degassing haze defect, its feature exists
In, the area coverage of uv-exposure unit is more than mask plate substrate area, and mask plate in the second step
It is placed on the central position of uv-exposure unit.
The method of control mask plate the most according to claim 1 and 2 degassing haze defect, its feature exists
In, in the second step, mask plate and uv-exposure unit distance are in predetermined distance range.
The method of control mask plate the most according to claim 1 and 2 degassing haze defect, its feature exists
In, described predetermined distance range is 5mm～50mm.
The method of control mask plate the most according to claim 1 and 2 degassing haze defect, its feature exists
In, uv-exposure unit is configured with device for monitoring temperature, for monitoring mask plate surface in processing procedure
Variations in temperature.
The method of control mask plate the most according to claim 1 and 2 degassing haze defect, its feature exists
In, uv-exposure unit includes the multiple uviol lamps being arranged side by side.
The method of control mask plate the most according to claim 8 degassing haze defect, it is characterised in that
Outer lamp is the uviol lamp of 154nm～256nm wavelength.
The method of control mask plate the most according to claim 1 and 2 degassing haze defect, its feature
It is, mask plate can be carried out cycle treatment with irradiation with predetermined period, it is also possible to carry out one before reuse
Secondary property treatment with irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610585192.6A CN106019820A (en) | 2016-07-22 | 2016-07-22 | Method for controlling degasification haze defects of masks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610585192.6A CN106019820A (en) | 2016-07-22 | 2016-07-22 | Method for controlling degasification haze defects of masks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106019820A true CN106019820A (en) | 2016-10-12 |
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ID=57117470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610585192.6A Pending CN106019820A (en) | 2016-07-22 | 2016-07-22 | Method for controlling degasification haze defects of masks |
Country Status (1)
| Country | Link |
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| CN (1) | CN106019820A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246159A (en) * | 2012-02-09 | 2013-08-14 | 中芯国际集成电路制造(上海)有限公司 | Device for removing vaporific defects on mask and method thereof |
| CN105573051A (en) * | 2016-03-22 | 2016-05-11 | 上海华力微电子有限公司 | Storage method of mask plate |
-
2016
- 2016-07-22 CN CN201610585192.6A patent/CN106019820A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246159A (en) * | 2012-02-09 | 2013-08-14 | 中芯国际集成电路制造(上海)有限公司 | Device for removing vaporific defects on mask and method thereof |
| CN105573051A (en) * | 2016-03-22 | 2016-05-11 | 上海华力微电子有限公司 | Storage method of mask plate |
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Application publication date: 20161012 |