CN110737175A - Method for removing film particles before exposure of masks - Google Patents
Method for removing film particles before exposure of masks Download PDFInfo
- Publication number
- CN110737175A CN110737175A CN201810791236.XA CN201810791236A CN110737175A CN 110737175 A CN110737175 A CN 110737175A CN 201810791236 A CN201810791236 A CN 201810791236A CN 110737175 A CN110737175 A CN 110737175A
- Authority
- CN
- China
- Prior art keywords
- ultrasonic
- film
- ionizer
- pattern film
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
Abstract
The invention belongs to the field of integrated circuit manufacturing, and relates to a method for removing film particles before exposure of masks, which comprises the following steps of , loading an exposed film on the lower surface of a light-transmitting plate, secondly, arranging an ultrasonic ion generator below the film, enabling the ultrasonic ion generator to emit oscillation-shaped ion gas to the surface of the film, enabling the oscillation-shaped ion gas to form an angle contact with the surface of the film, thirdly, starting a light source to expose the film for times, and fourthly, repeating the second step and the third step to realize repeated exposure.
Description
Technical Field
The invention belongs to the field of integrated circuit manufacturing, and relates to a method for removing film particles before exposure of masks.
Background
Integrated circuits are formed by forming semiconductor devices on the surface of a silicon wafer within a few microns and interconnecting the devices to form circuits via metal interconnects. With the development of semiconductor technology, in order to improve product performance and save cost, the density of integrated circuits is getting larger and smaller, and the feature size is getting smaller and smaller. Among them, photolithography and exposure processes play a significant role in semiconductor processes.
In order to avoid the influence of the film particles on the performance, the prior art mainly carries out infrared/chromatographic/visible light inspection before the exposure of the photomask and removes the film particles by using an air/nitrogen gun.
However, in the method of removing the film particles in the prior art, the detection frequency affects the detection success rate, and it takes time to remove the mask for cleaning. In addition, when the particles are removed by an air gun or a nitrogen gun, the adhesive particles on the film cannot be blown by the maximum air pressure, and the particles are adhered to the film by static electricity.
Disclosure of Invention
The invention provides methods for removing film particles before mask exposure, which can effectively improve the influence of the particles on the exposure performance in the mask exposure process.
To achieve the above technical object, methods for removing film particles before exposure of a mask, comprising the steps of:
step , providing a photomask, wherein the photomask comprises a transparent plate and a pattern film loaded under the transparent plate;
secondly, arranging an ultrasonic ion generator below the pattern film, wherein the ultrasonic ion generator emits oscillation-shaped ion gas to the surface of the pattern film; the blowing direction of the oscillation-shaped ion gas and the film surface of the pattern film form an inclination with an included angle smaller than 90 degrees;
step three, opening a light source to perform exposure processing on the pattern film;
and step four, repeating the step two and the step three to realize repeated exposure.
As an improved technical scheme of the invention, the oscillation frequency of the ultrasonic ion generator is between 20 and 60 kilohertz.
As an improved technical scheme of the invention, the ultrasonic ion generator comprises a frequency conversion type ultrasonic ion generator.
As an improved technical scheme of the invention, the included angle is between 5 and 85 degrees.
As an improved technical scheme of the invention, the photomask and the ultrasonic ion generator are arranged on a wafer bearing platform of exposure processing equipment.
As an improved technical solution of the present invention, in the second step, the ultrasonic ionizer performs a scanning movement with respect to the patterned thin film.
As an improved technical solution of the present invention, in the second step, the ultrasonic ion generator rotates around the light-transmitting plate.
As the improved technical scheme of the invention, the time of weeks of rotation of the ultrasonic ion generator is integral multiple of the time of the exposure interval of the pattern film.
Advantageous effects
The film particle that mask exposure process produced is got rid of in this application adoption supersound ion generator realization, and it is specific that the ultrasonic wave impels ionic gas to take place vibrations, and the vibrations of ionic gas impels pattern film vibrations, and ionic gas realizes improving film granule jointly with the vibrations of pattern film and gets rid of efficiency.
The oscillation-shaped ionic gas is in included angle contact with the pattern film, so that the removal of film particles can be accelerated.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the device;
FIG. 2 is a schematic diagram of an exemplary thin film ion removal process;
in the figure: 1. a light-transmitting plate; 2. a pattern film; 3. an ultrasonic ion generator; 4. oscillating ionic gas; 5. a frame-shaped film support.
Detailed Description
In order to make the objects and technical solutions of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention.
It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein by .
As shown in fig. 1-2, a method for removing particles of a patterned film before exposure of kinds of masks, comprising the steps of:
, loading the pattern film 2 to be exposed on the lower surface of the light-transmitting plate 1 through the frame-shaped film support 5, wherein a gap is reserved between the pattern film 2 and the light-transmitting plate 1 of the frame-shaped film support 5;
secondly, arranging an ultrasonic ion generator 3 below the pattern film 2, wherein the ultrasonic ion generator 3 emits oscillation-shaped ion gas 4 to the surface of the pattern film 2; the blowing direction of the oscillating ionic gas 4 and the film surface of the pattern film 2 form an inclination with an included angle smaller than 90 degrees; preferably, as shown in fig. 2, in order to promote the particles on the surface of the patterned film 2 to rapidly leave the surface of the patterned film 2, the included angle is between 5 and 85 degrees;
step three, turning on a light source to carry out th exposure treatment on the pattern film 2;
and step four, repeating the step two and the step three to realize repeated exposure, namely cleaning the surface of the pattern film by adopting the ultrasonic ion generator 3 before each exposure.
In order to ensure the cleaning efficiency, the frequency of the ultrasonic ion generator 3 is between 20 and 60 kilohertz, preferably, the ultrasonic ion generator 3 comprises a variable frequency type ultrasonic ion generator, and , in order to realize uniform cleaning, in the second step, the ultrasonic ion generator 3 rotates around the light-transmitting plate 1.
As the improved technical scheme of the invention, the time of weeks of rotation of the ultrasonic ion generator 3 is integral multiple of the time of the exposure interval of the pattern film 2.
, the optical cover and the ultrasonic ion generator 3 are installed on the wafer bearing platform of the exposure processing equipment to realize real-time cleaning before exposure.
The above are merely embodiments of the present invention, which are described in detail and with particularity, and therefore should not be construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the spirit of the present invention, and these changes and modifications are within the scope of the present invention.
Claims (8)
- A method for removing film particles before exposure of masks, comprising the steps of:step , providing a photomask, wherein the photomask comprises a transparent plate and a pattern film loaded under the transparent plate;secondly, arranging an ultrasonic ion generator below the pattern film, wherein the ultrasonic ion generator emits oscillation-shaped ion gas to the surface of the pattern film; the blowing direction of the oscillation-shaped ion gas and the film surface of the pattern film form an inclination with an included angle smaller than 90 degrees;step three, opening a light source to perform exposure processing on the pattern film;and step four, repeating the step two and the step three to realize repeated exposure.
- 2. The method of claim 1, wherein the ultrasonic ionizer is configured to vibrate at a frequency of 20-60 khz.
- 3. The method of claim 1, wherein the ultrasonic ionizer comprises a variable frequency ultrasonic ionizer.
- 4. The method for pre-exposure removal of pellicle particles as claimed in claim 1, characterized in that the angle is between 5 and 85 degrees.
- 5. The method of claim 1, wherein the reticle and the ultrasonic ionizer are mounted on a wafer stage of an exposure processing apparatus.
- 6. The method of claim 1, wherein in step two, the ultrasonic ionizer performs a scanning movement relative to the patterned film.
- 7. The method of claim 1, wherein in step two, the ultrasonic ionizer rotates around the transparent plate.
- 8. The method of claim 7, wherein the ultrasonic ionizer is rotated for cycles at a time integral multiple of the interval between exposures of the pattern film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810791236.XA CN110737175A (en) | 2018-07-18 | 2018-07-18 | Method for removing film particles before exposure of masks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810791236.XA CN110737175A (en) | 2018-07-18 | 2018-07-18 | Method for removing film particles before exposure of masks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110737175A true CN110737175A (en) | 2020-01-31 |
Family
ID=69235115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810791236.XA Pending CN110737175A (en) | 2018-07-18 | 2018-07-18 | Method for removing film particles before exposure of masks |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110737175A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111215398A (en) * | 2020-02-26 | 2020-06-02 | 昆山国显光电有限公司 | Cleaning system and cleaning method for mask plate |
| CN113391521A (en) * | 2020-03-13 | 2021-09-14 | 长鑫存储技术有限公司 | Exposure machine and exposure method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59173119A (en) * | 1983-03-23 | 1984-10-01 | Hitachi Zosen Corp | Nozzle for removing deposited dust |
| JP2004041914A (en) * | 2002-07-11 | 2004-02-12 | Citizen Watch Co Ltd | Device for cleaning substrate and method for manufacturing substrate |
| US20150323862A1 (en) * | 2014-05-12 | 2015-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Particle removal system and method thereof |
-
2018
- 2018-07-18 CN CN201810791236.XA patent/CN110737175A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59173119A (en) * | 1983-03-23 | 1984-10-01 | Hitachi Zosen Corp | Nozzle for removing deposited dust |
| JP2004041914A (en) * | 2002-07-11 | 2004-02-12 | Citizen Watch Co Ltd | Device for cleaning substrate and method for manufacturing substrate |
| US20150323862A1 (en) * | 2014-05-12 | 2015-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Particle removal system and method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111215398A (en) * | 2020-02-26 | 2020-06-02 | 昆山国显光电有限公司 | Cleaning system and cleaning method for mask plate |
| CN113391521A (en) * | 2020-03-13 | 2021-09-14 | 长鑫存储技术有限公司 | Exposure machine and exposure method |
| US11852976B2 (en) | 2020-03-13 | 2023-12-26 | Changxin Memory Technologies, Inc. | Exposure machine and exposure method |
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