KR20080084371A - Method for fabricating in photo mask - Google Patents

Method for fabricating in photo mask Download PDF

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Publication number
KR20080084371A
KR20080084371A KR1020070026038A KR20070026038A KR20080084371A KR 20080084371 A KR20080084371 A KR 20080084371A KR 1020070026038 A KR1020070026038 A KR 1020070026038A KR 20070026038 A KR20070026038 A KR 20070026038A KR 20080084371 A KR20080084371 A KR 20080084371A
Authority
KR
South Korea
Prior art keywords
pattern
pellicle
photomask
mask substrate
light blocking
Prior art date
Application number
KR1020070026038A
Other languages
Korean (ko)
Inventor
우성하
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070026038A priority Critical patent/KR20080084371A/en
Publication of KR20080084371A publication Critical patent/KR20080084371A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Abstract

A pattern to be transferred onto a wafer is formed on the mask substrate, a protective film surrounding the pattern is formed on the mask substrate on which the pattern is formed, and then a pellicle including a support is formed on the substrate on which the pattern is formed to form a photomask on which the pattern is formed. Protect. The protective film may suppress the reaction with ionic molecules that may remain on the mask substrate even when air is introduced into the pellicle. Therefore, the growth haze defect which generate | occur | produces inside a pellicle can be prevented.

Description

Method for fabricating in photo mask

1 to 5 are cross-sectional views illustrating a method of manufacturing a photomask according to the present invention.

The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a photomask.

In the process of manufacturing a semiconductor device, a photolithography process is used as a method for implementing a pattern to be formed on a semiconductor substrate. The photolithography process is a technique of transferring a resist pattern identical to the pattern drawn on a photomask to a semiconductor substrate using a photomask on which a pattern is drawn. At this time, if the photomask used is contaminated by particles or the like, it affects the pattern transferred to the semiconductor substrate, so that a precise resist pattern cannot be formed.

In order to prevent contamination of the photomask, for example, after manufacturing the photomask, a pellicle is attached to the photomask. However, outside air may be introduced into the pellicle through the air hole constituting the pellicle. In addition, internally, when manufacturing a photomask, ionic molecules such as sulfuric acid may remain on the surface of the photomask in the accompanying cleaning process.

Residual ionic molecules interact with the air introduced through the air holes, causing growth haze defects in the pellicle, for example, in the vicinity of the substrate or pattern. These haze defects block light, and even if the pellicle is attached, it is impossible to form a precise resist pattern on the semiconductor substrate. Therefore, there is a need for a method of protecting the photomask pattern inside the pellicle.

The technical problem to be achieved by the present invention is to provide a photomask manufacturing method for protecting the photomask pattern inside the pellicle to prevent haze defects.

In order to achieve the above technical problem, a photomask manufacturing method according to the present invention, forming a pattern to be transferred onto a wafer on a mask substrate; And forming a protective film surrounding the pattern on the mask substrate on which the pattern is formed.

The pattern is preferably formed of a light blocking film pattern or a light blocking film pattern and a phase inversion film pattern.

The protective film is preferably formed of a nitride film.

After forming the protective film, the method may further include forming a pellicle having a support on the mask substrate on which the protective film is formed.

1 to 5 are cross-sectional views illustrating a method of manufacturing a photomask according to the present invention.

Referring to FIG. 1, a light blocking film 110 and a resist film 120 are sequentially formed on a mask substrate 100 such as quartz. The light blocking film 110 may include a chromium (Cr) film. In the embodiment of the present invention, a photomask having a binary structure has been described as an example, but a photomask having a phase shift layer may be used in some cases.

Referring to FIG. 2, the light blocking film pattern 111 and the resist film pattern 121 are formed by using electron beam (E-beam) lithography. Specifically, after forming a resist film pattern 121 that is the same as a circuit pattern to be formed on a semiconductor substrate by using electron beam lithography, the light shielding film is selectively etched using the resist film pattern 121 as an etching mask to form a light blocking film pattern ( 111). Here, the area where the mask substrate 100 is exposed by the light blocking film pattern 111 is a light transmitting area through which light is transmitted, and the area where the light blocking film pattern 111 is formed is a light blocking area through which light is not transmitted.

Referring to FIG. 3, after removing the resist film pattern (121 of FIG. 2) with a strip or the like, the mask substrate 100 on which the light blocking film pattern 111 is formed is cleaned. The cleaning may be, for example, wet cleaning using an Ammonium Peroxide Mixture (APM) solution or a Sulfuric Peroxide Mixture (SPM) solution.

 However, after wet cleaning, ionic molecules such as sulfuric acid or ammonia may remain on the mask substrate 100 and the light blocking layer pattern 111 on the surfaces thereof. These ionic molecules, when attached to subsequent pellicles, bind to the air flowing through the air holes, causing a growth haze defect inside the pellicle.

Referring to FIG. 4, a passivation layer 130 is formed on the mask substrate 100 and the light blocking layer pattern 111. The passivation layer 130 may be formed by chemical vapor deposition or sputtering. Since the passivation layer 130 is also formed on the mask substrate through which light is transmitted, it is preferable that the passivation layer 130 is formed at a thickness of, for example, several to several hundred micrometers so as not to affect the light transmittance. The surface of the mask substrate 100 and the light blocking layer pattern 111 is not exposed to the atmosphere by the passivation layer 130. Accordingly, the protective layer 130 protects the light blocking layer pattern 111 even when air is introduced through the air hole in a subsequent step, thereby suppressing reaction with ions remaining on the mask surface.

Referring to FIG. 5, a pellicle is formed to face the light blocking layer pattern formed on the photomask. Here, the pellicle includes a frame 141 supporting the pellicle film 140, and an air hole is disposed on the side of the frame 141. The air hole controls the pressure in the pellicle, and serves to discharge the gas generated from the pellicle bonding surface or the photomask substrate to the outside.

The air may be introduced into the pellicle through the air hole. However, even when air is introduced, the light blocking layer pattern 111 is protected by the passivation layer 130, and thus it may not react with ions remaining on the surface of the light blocking layer pattern. Therefore, generation of a growth haze defect can be prevented.

In the above, the present invention has been described in detail with reference to specific examples, but the present invention is not limited thereto, and it is apparent that modifications and improvements are possible by those skilled in the art within the technical idea of the present invention. .

As described so far, according to the photomask manufacturing method according to the present invention, after forming the light blocking film pattern, a protective film is formed on the entire surface of the mask substrate before the pellicle is attached.

Due to this protective film, the pattern formed on the mask substrate can be protected by completely blocking the ionic molecules remaining in the cleaning process from the outside. Accordingly, it is possible to prevent haze defects caused by the reaction of air and ionic molecules introduced into the air holes.

Claims (4)

Forming a pattern to be transferred onto a wafer on the mask substrate; And And forming a protective film surrounding the pattern on the mask substrate on which the pattern is formed. The method of claim 1, The pattern is a photomask manufacturing method of forming a structure in which a light blocking film pattern or a light blocking film pattern and a phase inversion film pattern is laminated. The method of claim 1, The protective film is a photomask manufacturing method of forming a nitride film. The method of claim 1, After forming the protective film, And forming a pellicle having a support on the mask substrate on which the protective film is formed.
KR1020070026038A 2007-03-16 2007-03-16 Method for fabricating in photo mask KR20080084371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070026038A KR20080084371A (en) 2007-03-16 2007-03-16 Method for fabricating in photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070026038A KR20080084371A (en) 2007-03-16 2007-03-16 Method for fabricating in photo mask

Publications (1)

Publication Number Publication Date
KR20080084371A true KR20080084371A (en) 2008-09-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070026038A KR20080084371A (en) 2007-03-16 2007-03-16 Method for fabricating in photo mask

Country Status (1)

Country Link
KR (1) KR20080084371A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102323715A (en) * 2011-09-16 2012-01-18 西安中为光电科技有限公司 Light cover plate for preventing atomization and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102323715A (en) * 2011-09-16 2012-01-18 西安中为光电科技有限公司 Light cover plate for preventing atomization and manufacturing method thereof

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