CN101911319B - 辐射发射体及制造辐射发射体的方法 - Google Patents

辐射发射体及制造辐射发射体的方法 Download PDF

Info

Publication number
CN101911319B
CN101911319B CN2008801229538A CN200880122953A CN101911319B CN 101911319 B CN101911319 B CN 101911319B CN 2008801229538 A CN2008801229538 A CN 2008801229538A CN 200880122953 A CN200880122953 A CN 200880122953A CN 101911319 B CN101911319 B CN 101911319B
Authority
CN
China
Prior art keywords
layer
intermediate layer
emission body
radiated emission
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008801229538A
Other languages
English (en)
Chinese (zh)
Other versions
CN101911319A (zh
Inventor
F·埃伯哈德
R·温迪希
R·沃尔特
M·施马尔
M·阿尔斯泰特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101911319A publication Critical patent/CN101911319A/zh
Application granted granted Critical
Publication of CN101911319B publication Critical patent/CN101911319B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Devices (AREA)
CN2008801229538A 2007-12-27 2008-12-19 辐射发射体及制造辐射发射体的方法 Expired - Fee Related CN101911319B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007062790 2007-12-27
DE102007062790.6 2007-12-27
DE102008024517.8 2008-05-21
DE102008024517A DE102008024517A1 (de) 2007-12-27 2008-05-21 Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
PCT/DE2008/002136 WO2009083001A2 (de) 2007-12-27 2008-12-19 Strahlungsemittierender körper und verfahren zur herstellung eines strahlungsemittierenden körpers

Publications (2)

Publication Number Publication Date
CN101911319A CN101911319A (zh) 2010-12-08
CN101911319B true CN101911319B (zh) 2012-10-10

Family

ID=40690884

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801229538A Expired - Fee Related CN101911319B (zh) 2007-12-27 2008-12-19 辐射发射体及制造辐射发射体的方法

Country Status (7)

Country Link
US (1) US8723199B2 (enExample)
EP (1) EP2225782B1 (enExample)
JP (1) JP5781766B2 (enExample)
KR (1) KR101652531B1 (enExample)
CN (1) CN101911319B (enExample)
DE (1) DE102008024517A1 (enExample)
WO (1) WO2009083001A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008027045A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
JP5661660B2 (ja) 2012-02-07 2015-01-28 株式会社東芝 半導体発光素子
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
DE102018131411A1 (de) 2018-12-07 2020-06-10 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
CN112350072A (zh) * 2019-08-06 2021-02-09 广州方邦电子股份有限公司 散射膜及包含散射膜的电子装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006006822A1 (en) * 2004-07-12 2006-01-19 Gwangju Institute Of Science And Technology Flip-chip light emitting diodes and method of manufacturing thereof
CN1905219A (zh) * 2005-07-29 2007-01-31 璨圆光电股份有限公司 发光二极管结构
WO2007105626A1 (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works, Ltd. 発光素子

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4951299A (en) 1999-07-09 2001-01-30 Osram Opto Semiconductors Gmbh And Co. Ohg Encapsulation of a device
JP4431925B2 (ja) * 2000-11-30 2010-03-17 信越半導体株式会社 発光素子の製造方法
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP4121551B2 (ja) * 2002-10-23 2008-07-23 信越半導体株式会社 発光素子の製造方法及び発光素子
US7041529B2 (en) 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
DE10339772B4 (de) 2003-08-27 2006-07-13 Novaled Gmbh Licht emittierendes Bauelement und Verfahren zu seiner Herstellung
TW200520266A (en) 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
JP2005158904A (ja) 2003-11-21 2005-06-16 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族窒化物半導体素子及び発光装置
JP4164689B2 (ja) 2003-11-21 2008-10-15 サンケン電気株式会社 半導体発光素子
EP1735838B1 (en) 2004-04-15 2011-10-05 Trustees of Boston University Optical devices featuring textured semiconductor layers
DE102005013894B4 (de) * 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
DE102004061865A1 (de) * 2004-09-29 2006-03-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilmhalbleiterchips
DE102004057802B4 (de) 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
JP2006269807A (ja) 2005-03-24 2006-10-05 Sony Corp 半導体発光ダイオード
KR100682877B1 (ko) * 2005-07-12 2007-02-15 삼성전기주식회사 발광다이오드 및 그 제조방법
TWI270222B (en) * 2005-10-07 2007-01-01 Formosa Epitaxy Inc Light emitting diode chip
EP1786050B1 (de) 2005-11-10 2010-06-23 Novaled AG Dotiertes organisches Halbleitermaterial
KR100640497B1 (ko) * 2005-11-24 2006-11-01 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
KR101241477B1 (ko) * 2006-01-27 2013-03-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP2007266577A (ja) * 2006-03-03 2007-10-11 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
DE102007002416A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
JP2007305909A (ja) 2006-05-15 2007-11-22 Kyocera Corp 窒化ガリウム系化合物半導体の製造方法及び発光素子の製造方法
WO2007136097A1 (ja) * 2006-05-23 2007-11-29 Meijo University 半導体発光素子
TW200807760A (en) * 2006-05-23 2008-02-01 Alps Electric Co Ltd Method for manufacturing semiconductor light emitting element
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
US8026527B2 (en) * 2007-12-06 2011-09-27 Bridgelux, Inc. LED structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006006822A1 (en) * 2004-07-12 2006-01-19 Gwangju Institute Of Science And Technology Flip-chip light emitting diodes and method of manufacturing thereof
CN1905219A (zh) * 2005-07-29 2007-01-31 璨圆光电股份有限公司 发光二极管结构
WO2007105626A1 (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works, Ltd. 発光素子

Also Published As

Publication number Publication date
WO2009083001A3 (de) 2009-09-24
WO2009083001A2 (de) 2009-07-09
US20110198639A1 (en) 2011-08-18
EP2225782A2 (de) 2010-09-08
KR101652531B1 (ko) 2016-08-30
US8723199B2 (en) 2014-05-13
CN101911319A (zh) 2010-12-08
EP2225782B1 (de) 2019-07-03
JP5781766B2 (ja) 2015-09-24
DE102008024517A1 (de) 2009-07-02
KR20100107026A (ko) 2010-10-04
JP2011508441A (ja) 2011-03-10

Similar Documents

Publication Publication Date Title
US8476643B2 (en) Radiation-emitting body and method for producing a radiation-emitting body
CN101103438B (zh) 垂直发光二极管的制造方法
US9515238B2 (en) Micro-LED array with filters
US7790978B1 (en) Tandem filters using frequency selective surfaces for enhanced conversion efficiency in a thermophotovoltaic energy conversion system
RU2491682C2 (ru) Полупроводниковое светоизлучающее устройство со структурами вывода света
US8729580B2 (en) Light emitter with metal-oxide coating
RU2552867C2 (ru) Светодиод высокой яркости с шероховатым активным слоем и соответствующим по форме покрытием
CN101796660B (zh) 光电半导体本体
CN101911319B (zh) 辐射发射体及制造辐射发射体的方法
US20110049546A1 (en) high reflectivity mirrors and method for making same
CN101542751A (zh) 半导体芯片以及制造半导体芯片的方法
CN103038671A (zh) 微纳米组合结构物及其制备方法及光学器件的制备方法
WO2012040979A1 (zh) 发光装置及其制造方法
TW200845428A (en) Radiation-emitting chip comprising at least one semiconductor body
CN103730556A (zh) 发光二极管芯片及其制作方法
TW201312767A (zh) 紋理化光電子裝置及其相關製造方法
CN112420891B (zh) 发光二极管芯片及其制作方法
CN103066175A (zh) 一种具有电流阻挡层的发光二极管及其制备方法
CN101789475A (zh) 光子晶体发光二极管及其制作方法
CN102082216A (zh) 一种发光二极管芯片及其制造方法
CN110571315B (zh) 一种led芯片及其制作方法
TWI782528B (zh) 發光裝置陣列
CN102201508B (zh) 发光二极管芯片及其制作方法
TW200908395A (en) Optoelectronic semiconductor chip
CN106653986A (zh) 一种具有反射电流阻挡层的led芯片及其制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121010

CF01 Termination of patent right due to non-payment of annual fee