CN103066175A - 一种具有电流阻挡层的发光二极管及其制备方法 - Google Patents
一种具有电流阻挡层的发光二极管及其制备方法 Download PDFInfo
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- CN103066175A CN103066175A CN2011103192781A CN201110319278A CN103066175A CN 103066175 A CN103066175 A CN 103066175A CN 2011103192781 A CN2011103192781 A CN 2011103192781A CN 201110319278 A CN201110319278 A CN 201110319278A CN 103066175 A CN103066175 A CN 103066175A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 32
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 8
- 230000011514 reflex Effects 0.000 claims description 8
- 238000007738 vacuum evaporation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 34
- 239000010408 film Substances 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103346227A (zh) * | 2013-07-03 | 2013-10-09 | 河北工业大学 | 一种氮化镓基发光二极管芯片及其制备方法 |
CN103390710A (zh) * | 2013-08-08 | 2013-11-13 | 聚灿光电科技(苏州)有限公司 | Led芯片及其制备方法 |
CN103456855A (zh) * | 2013-09-17 | 2013-12-18 | 聚灿光电科技(苏州)有限公司 | 一种led表面粗化芯片以及制作方法 |
CN104241471A (zh) * | 2014-10-11 | 2014-12-24 | 聚灿光电科技(苏州)有限公司 | 一种垂直结构的led芯片及其制造方法 |
CN104868028A (zh) * | 2014-02-25 | 2015-08-26 | 璨圆光电股份有限公司 | 发光二极管芯片 |
CN106057998A (zh) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | 一种具有电流阻挡层及电流扩展层的GaAs基发光二极管芯片及其制备方法 |
CN109817776A (zh) * | 2017-11-22 | 2019-05-28 | 比亚迪股份有限公司 | 一种发光二极管芯片及其制作方法 |
CN110600592A (zh) * | 2019-10-11 | 2019-12-20 | 佛山市国星半导体技术有限公司 | 一种倒装led芯片及其制作方法 |
CN113097354A (zh) * | 2021-03-04 | 2021-07-09 | 厦门三安光电有限公司 | 一种发光二极管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6215131B1 (en) * | 1999-08-11 | 2001-04-10 | Advanced Epitaxy Technology Inc. | Light-emitting device using vacuum doughnut to serve as a current blocking layer |
JP2001177147A (ja) * | 1999-12-16 | 2001-06-29 | Toshiba Corp | 電流狭窄型半導体発光素子 |
JP2007150310A (ja) * | 2005-11-23 | 2007-06-14 | Samsung Electro Mech Co Ltd | 垂直構造窒化ガリウム系発光ダイオード素子 |
CN101807650A (zh) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | 具有分布布拉格反射层的氮化镓基高亮度发光二极管及其制作工艺 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6215131B1 (en) * | 1999-08-11 | 2001-04-10 | Advanced Epitaxy Technology Inc. | Light-emitting device using vacuum doughnut to serve as a current blocking layer |
JP2001177147A (ja) * | 1999-12-16 | 2001-06-29 | Toshiba Corp | 電流狭窄型半導体発光素子 |
JP2007150310A (ja) * | 2005-11-23 | 2007-06-14 | Samsung Electro Mech Co Ltd | 垂直構造窒化ガリウム系発光ダイオード素子 |
CN101807650A (zh) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | 具有分布布拉格反射层的氮化镓基高亮度发光二极管及其制作工艺 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103346227B (zh) * | 2013-07-03 | 2016-04-06 | 河北工业大学 | 一种氮化镓基发光二极管芯片及其制备方法 |
CN103346227A (zh) * | 2013-07-03 | 2013-10-09 | 河北工业大学 | 一种氮化镓基发光二极管芯片及其制备方法 |
CN103390710A (zh) * | 2013-08-08 | 2013-11-13 | 聚灿光电科技(苏州)有限公司 | Led芯片及其制备方法 |
CN103390710B (zh) * | 2013-08-08 | 2015-12-02 | 聚灿光电科技股份有限公司 | Led芯片及其制备方法 |
CN103456855A (zh) * | 2013-09-17 | 2013-12-18 | 聚灿光电科技(苏州)有限公司 | 一种led表面粗化芯片以及制作方法 |
CN103456855B (zh) * | 2013-09-17 | 2016-05-11 | 聚灿光电科技股份有限公司 | 一种led表面粗化芯片以及制作方法 |
CN104868028B (zh) * | 2014-02-25 | 2017-12-22 | 晶元光电股份有限公司 | 发光二极管芯片 |
CN104868028A (zh) * | 2014-02-25 | 2015-08-26 | 璨圆光电股份有限公司 | 发光二极管芯片 |
CN107871804A (zh) * | 2014-02-25 | 2018-04-03 | 晶元光电股份有限公司 | 发光二极管芯片 |
CN107871804B (zh) * | 2014-02-25 | 2022-07-08 | 晶元光电股份有限公司 | 发光二极管芯片 |
CN104241471A (zh) * | 2014-10-11 | 2014-12-24 | 聚灿光电科技(苏州)有限公司 | 一种垂直结构的led芯片及其制造方法 |
CN106057998A (zh) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | 一种具有电流阻挡层及电流扩展层的GaAs基发光二极管芯片及其制备方法 |
CN109817776A (zh) * | 2017-11-22 | 2019-05-28 | 比亚迪股份有限公司 | 一种发光二极管芯片及其制作方法 |
CN110600592A (zh) * | 2019-10-11 | 2019-12-20 | 佛山市国星半导体技术有限公司 | 一种倒装led芯片及其制作方法 |
CN113097354A (zh) * | 2021-03-04 | 2021-07-09 | 厦门三安光电有限公司 | 一种发光二极管及其制备方法 |
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