KR101652531B1 - 복사 방출 몸체 및 복사 방출 몸체의 제조 방법 - Google Patents

복사 방출 몸체 및 복사 방출 몸체의 제조 방법 Download PDF

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Publication number
KR101652531B1
KR101652531B1 KR1020107016854A KR20107016854A KR101652531B1 KR 101652531 B1 KR101652531 B1 KR 101652531B1 KR 1020107016854 A KR1020107016854 A KR 1020107016854A KR 20107016854 A KR20107016854 A KR 20107016854A KR 101652531 B1 KR101652531 B1 KR 101652531B1
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radiation
active layer
interface
intermediate layer
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KR20100107026A (ko
Inventor
프란즈 에버하르트
레이너 윈디시
로버트 월터
마이클 슈말
마그누스 알스테트
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
KR1020107016854A 2007-12-27 2008-12-19 복사 방출 몸체 및 복사 방출 몸체의 제조 방법 Expired - Fee Related KR101652531B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007062790 2007-12-27
DE102007062790.6 2007-12-27
DE102008024517A DE102008024517A1 (de) 2007-12-27 2008-05-21 Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102008024517.8 2008-05-21

Publications (2)

Publication Number Publication Date
KR20100107026A KR20100107026A (ko) 2010-10-04
KR101652531B1 true KR101652531B1 (ko) 2016-08-30

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ID=40690884

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KR1020107016854A Expired - Fee Related KR101652531B1 (ko) 2007-12-27 2008-12-19 복사 방출 몸체 및 복사 방출 몸체의 제조 방법

Country Status (7)

Country Link
US (1) US8723199B2 (enExample)
EP (1) EP2225782B1 (enExample)
JP (1) JP5781766B2 (enExample)
KR (1) KR101652531B1 (enExample)
CN (1) CN101911319B (enExample)
DE (1) DE102008024517A1 (enExample)
WO (1) WO2009083001A2 (enExample)

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* Cited by examiner, † Cited by third party
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DE102008027045A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
JP5661660B2 (ja) 2012-02-07 2015-01-28 株式会社東芝 半導体発光素子
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
DE102018131411A1 (de) * 2018-12-07 2020-06-10 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
CN112350072A (zh) * 2019-08-06 2021-02-09 广州方邦电子股份有限公司 散射膜及包含散射膜的电子装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170993A (ja) * 2000-11-30 2002-06-14 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法、可視光発光装置

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AU4951299A (en) 1999-07-09 2001-01-30 Osram Opto Semiconductors Gmbh And Co. Ohg Encapsulation of a device
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP4121551B2 (ja) * 2002-10-23 2008-07-23 信越半導体株式会社 発光素子の製造方法及び発光素子
US7041529B2 (en) 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
DE10339772B4 (de) 2003-08-27 2006-07-13 Novaled Gmbh Licht emittierendes Bauelement und Verfahren zu seiner Herstellung
TW200520266A (en) 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
JP2005158904A (ja) * 2003-11-21 2005-06-16 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族窒化物半導体素子及び発光装置
JP4164689B2 (ja) 2003-11-21 2008-10-15 サンケン電気株式会社 半導体発光素子
WO2005104236A2 (en) 2004-04-15 2005-11-03 Trustees Of Boston University Optical devices featuring textured semiconductor layers
DE102005013894B4 (de) 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
WO2006006822A1 (en) * 2004-07-12 2006-01-19 Gwangju Institute Of Science And Technology Flip-chip light emitting diodes and method of manufacturing thereof
DE102004061865A1 (de) * 2004-09-29 2006-03-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilmhalbleiterchips
DE102004057802B4 (de) 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
JP2006269807A (ja) * 2005-03-24 2006-10-05 Sony Corp 半導体発光ダイオード
KR100682877B1 (ko) 2005-07-12 2007-02-15 삼성전기주식회사 발광다이오드 및 그 제조방법
CN1905219A (zh) * 2005-07-29 2007-01-31 璨圆光电股份有限公司 发光二极管结构
TWI270222B (en) 2005-10-07 2007-01-01 Formosa Epitaxy Inc Light emitting diode chip
DE502005009802D1 (de) 2005-11-10 2010-08-05 Novaled Ag Dotiertes organisches Halbleitermaterial
KR100640497B1 (ko) * 2005-11-24 2006-11-01 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
KR101241477B1 (ko) * 2006-01-27 2013-03-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP2007266577A (ja) * 2006-03-03 2007-10-11 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
DE102007002416A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102006017573A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
JP2007305909A (ja) * 2006-05-15 2007-11-22 Kyocera Corp 窒化ガリウム系化合物半導体の製造方法及び発光素子の製造方法
JP4959693B2 (ja) * 2006-05-23 2012-06-27 学校法人 名城大学 半導体発光素子
TW200807760A (en) * 2006-05-23 2008-02-01 Alps Electric Co Ltd Method for manufacturing semiconductor light emitting element
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
US8026527B2 (en) * 2007-12-06 2011-09-27 Bridgelux, Inc. LED structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170993A (ja) * 2000-11-30 2002-06-14 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法、可視光発光装置

Also Published As

Publication number Publication date
EP2225782A2 (de) 2010-09-08
JP5781766B2 (ja) 2015-09-24
DE102008024517A1 (de) 2009-07-02
US8723199B2 (en) 2014-05-13
WO2009083001A2 (de) 2009-07-09
EP2225782B1 (de) 2019-07-03
KR20100107026A (ko) 2010-10-04
JP2011508441A (ja) 2011-03-10
CN101911319B (zh) 2012-10-10
CN101911319A (zh) 2010-12-08
US20110198639A1 (en) 2011-08-18
WO2009083001A3 (de) 2009-09-24

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