JP5781766B2 - 放射放出体およびその製造方法 - Google Patents

放射放出体およびその製造方法 Download PDF

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Publication number
JP5781766B2
JP5781766B2 JP2010540027A JP2010540027A JP5781766B2 JP 5781766 B2 JP5781766 B2 JP 5781766B2 JP 2010540027 A JP2010540027 A JP 2010540027A JP 2010540027 A JP2010540027 A JP 2010540027A JP 5781766 B2 JP5781766 B2 JP 5781766B2
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Japan
Prior art keywords
layer
radiation
interface
radiation emitter
active layer
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Expired - Fee Related
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JP2010540027A
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Japanese (ja)
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JP2011508441A5 (enExample
JP2011508441A (ja
Inventor
フランツ エーベルハルト
フランツ エーベルハルト
レイナー ヴィンディッシュ
レイナー ヴィンディッシュ
ロベルト ヴァルター
ロベルト ヴァルター
ミハエル シュマル
ミハエル シュマル
マグヌス アールシュテット
マグヌス アールシュテット
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
JP2010540027A 2007-12-27 2008-12-19 放射放出体およびその製造方法 Expired - Fee Related JP5781766B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007062790 2007-12-27
DE102007062790.6 2007-12-27
DE102008024517A DE102008024517A1 (de) 2007-12-27 2008-05-21 Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102008024517.8 2008-05-21
PCT/DE2008/002136 WO2009083001A2 (de) 2007-12-27 2008-12-19 Strahlungsemittierender körper und verfahren zur herstellung eines strahlungsemittierenden körpers

Publications (3)

Publication Number Publication Date
JP2011508441A JP2011508441A (ja) 2011-03-10
JP2011508441A5 JP2011508441A5 (enExample) 2011-12-15
JP5781766B2 true JP5781766B2 (ja) 2015-09-24

Family

ID=40690884

Family Applications (1)

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JP2010540027A Expired - Fee Related JP5781766B2 (ja) 2007-12-27 2008-12-19 放射放出体およびその製造方法

Country Status (7)

Country Link
US (1) US8723199B2 (enExample)
EP (1) EP2225782B1 (enExample)
JP (1) JP5781766B2 (enExample)
KR (1) KR101652531B1 (enExample)
CN (1) CN101911319B (enExample)
DE (1) DE102008024517A1 (enExample)
WO (1) WO2009083001A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008027045A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
DE102011012298A1 (de) 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
JP5661660B2 (ja) 2012-02-07 2015-01-28 株式会社東芝 半導体発光素子
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
DE102018131411A1 (de) * 2018-12-07 2020-06-10 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
CN112350072A (zh) * 2019-08-06 2021-02-09 广州方邦电子股份有限公司 散射膜及包含散射膜的电子装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69937407T2 (de) 1999-07-09 2008-07-24 Osram Opto Semiconductors Gmbh & Co. Ohg Verkapselung einer vorrichtung
JP4431925B2 (ja) * 2000-11-30 2010-03-17 信越半導体株式会社 発光素子の製造方法
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US7041529B2 (en) 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
JP4121551B2 (ja) 2002-10-23 2008-07-23 信越半導体株式会社 発光素子の製造方法及び発光素子
DE10339772B4 (de) 2003-08-27 2006-07-13 Novaled Gmbh Licht emittierendes Bauelement und Verfahren zu seiner Herstellung
TW200520266A (en) 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
JP4164689B2 (ja) * 2003-11-21 2008-10-15 サンケン電気株式会社 半導体発光素子
JP2005158904A (ja) 2003-11-21 2005-06-16 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族窒化物半導体素子及び発光装置
WO2005104236A2 (en) 2004-04-15 2005-11-03 Trustees Of Boston University Optical devices featuring textured semiconductor layers
DE102005013894B4 (de) * 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
WO2006006822A1 (en) 2004-07-12 2006-01-19 Gwangju Institute Of Science And Technology Flip-chip light emitting diodes and method of manufacturing thereof
DE102004061865A1 (de) * 2004-09-29 2006-03-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilmhalbleiterchips
DE102004057802B4 (de) 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
JP2006269807A (ja) 2005-03-24 2006-10-05 Sony Corp 半導体発光ダイオード
KR100682877B1 (ko) * 2005-07-12 2007-02-15 삼성전기주식회사 발광다이오드 및 그 제조방법
CN1905219A (zh) * 2005-07-29 2007-01-31 璨圆光电股份有限公司 发光二极管结构
TWI270222B (en) * 2005-10-07 2007-01-01 Formosa Epitaxy Inc Light emitting diode chip
EP1786050B1 (de) 2005-11-10 2010-06-23 Novaled AG Dotiertes organisches Halbleitermaterial
KR100640497B1 (ko) * 2005-11-24 2006-11-01 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
KR101241477B1 (ko) * 2006-01-27 2013-03-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP2007266577A (ja) * 2006-03-03 2007-10-11 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
US8049233B2 (en) 2006-03-10 2011-11-01 Panasonic Electric Works Co., Ltd. Light-emitting device
DE102006017573A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
DE102007002416A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
JP2007305909A (ja) 2006-05-15 2007-11-22 Kyocera Corp 窒化ガリウム系化合物半導体の製造方法及び発光素子の製造方法
WO2007136097A1 (ja) * 2006-05-23 2007-11-29 Meijo University 半導体発光素子
TW200807760A (en) * 2006-05-23 2008-02-01 Alps Electric Co Ltd Method for manufacturing semiconductor light emitting element
US7501295B2 (en) 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
US8026527B2 (en) * 2007-12-06 2011-09-27 Bridgelux, Inc. LED structure

Also Published As

Publication number Publication date
DE102008024517A1 (de) 2009-07-02
KR101652531B1 (ko) 2016-08-30
US20110198639A1 (en) 2011-08-18
CN101911319B (zh) 2012-10-10
WO2009083001A3 (de) 2009-09-24
JP2011508441A (ja) 2011-03-10
WO2009083001A2 (de) 2009-07-09
US8723199B2 (en) 2014-05-13
KR20100107026A (ko) 2010-10-04
EP2225782A2 (de) 2010-09-08
CN101911319A (zh) 2010-12-08
EP2225782B1 (de) 2019-07-03

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