CN101902678A - 硅麦克风封装体 - Google Patents
硅麦克风封装体 Download PDFInfo
- Publication number
- CN101902678A CN101902678A CN2010101937564A CN201010193756A CN101902678A CN 101902678 A CN101902678 A CN 101902678A CN 2010101937564 A CN2010101937564 A CN 2010101937564A CN 201010193756 A CN201010193756 A CN 201010193756A CN 101902678 A CN101902678 A CN 101902678A
- Authority
- CN
- China
- Prior art keywords
- cover part
- integrated
- silicon
- microphone chip
- silicon microphone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 141
- 239000010703 silicon Substances 0.000 title claims abstract description 141
- 230000004888 barrier function Effects 0.000 claims description 40
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 description 38
- 239000010410 layer Substances 0.000 description 28
- 239000011229 interlayer Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000001953 sensory effect Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000032365 Electromagnetic interference Diseases 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Details Of Audible-Bandwidth Transducers (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18258709P | 2009-05-29 | 2009-05-29 | |
US61/182,587 | 2009-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101902678A true CN101902678A (zh) | 2010-12-01 |
CN101902678B CN101902678B (zh) | 2016-06-22 |
Family
ID=43220254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010193756.4A Active CN101902678B (zh) | 2009-05-29 | 2010-05-28 | 硅麦克风封装体 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8571249B2 (zh) |
CN (1) | CN101902678B (zh) |
TW (1) | TWI472235B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103716741A (zh) * | 2012-10-01 | 2014-04-09 | 应美盛股份有限公司 | 用于恶劣环境的mems传声器系统 |
CN103841747A (zh) * | 2012-11-21 | 2014-06-04 | 昆山华扬电子有限公司 | 内埋腔体多层印制板结构 |
CN104080033A (zh) * | 2013-03-26 | 2014-10-01 | 欧姆龙株式会社 | 麦克风 |
CN104811881A (zh) * | 2015-04-29 | 2015-07-29 | 歌尔声学股份有限公司 | 压电扬声器及其形成方法 |
CN105280561A (zh) * | 2014-05-27 | 2016-01-27 | 英飞凌科技股份有限公司 | 基于引线框架的mems传感器结构 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI484835B (zh) * | 2011-04-12 | 2015-05-11 | Pixart Imaging Inc | 微機電系統麥克風裝置及其製作方法 |
ITTO20110980A1 (it) | 2011-10-27 | 2013-04-28 | St Microelectronics Srl | Struttura incapsulante schermata e relativo metodo di fabbricazione |
JP5741487B2 (ja) * | 2012-02-29 | 2015-07-01 | オムロン株式会社 | マイクロフォン |
TWI448163B (zh) * | 2012-03-05 | 2014-08-01 | Merry Electronics Co Ltd | 駐極體電容麥克風 |
US9181086B1 (en) | 2012-10-01 | 2015-11-10 | The Research Foundation For The State University Of New York | Hinged MEMS diaphragm and method of manufacture therof |
US8965027B2 (en) * | 2013-02-15 | 2015-02-24 | Invensense, Inc. | Packaged microphone with frame having die mounting concavity |
CN104037135B (zh) | 2013-03-07 | 2017-09-22 | 精材科技股份有限公司 | 晶片封装体及其形成方法 |
KR20150060469A (ko) * | 2013-11-26 | 2015-06-03 | 삼성전기주식회사 | 멤스 마이크로폰 패키지 및 멤스 마이크로폰 패키지의 제조 방법 |
TWI575963B (zh) * | 2014-02-27 | 2017-03-21 | 先技股份有限公司 | 微機電麥克風裝置 |
US10358340B2 (en) * | 2016-04-28 | 2019-07-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits having shielded MEMS devices and methods for fabricating shielded MEMS devices |
FR3056978B1 (fr) * | 2016-10-05 | 2019-08-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur de pression, en particulier microphone a agencement ameliore |
DE102018203098B3 (de) * | 2018-03-01 | 2019-06-19 | Infineon Technologies Ag | MEMS-Sensor |
GB2584163B (en) * | 2019-05-22 | 2022-05-11 | Cirrus Logic Int Semiconductor Ltd | Packaging for a MEMS transducer |
CN113891200A (zh) * | 2021-09-24 | 2022-01-04 | 青岛歌尔智能传感器有限公司 | 一种麦克风的封装结构 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020102004A1 (en) * | 2000-11-28 | 2002-08-01 | Minervini Anthony D. | Miniature silicon condenser microphone and method for producing same |
CN201138866Y (zh) * | 2007-12-24 | 2008-10-22 | 歌尔声学股份有限公司 | 改进结构的硅麦克风 |
CN101426166A (zh) * | 2008-11-07 | 2009-05-06 | 歌尔声学股份有限公司 | 硅麦克风 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6088463A (en) * | 1998-10-30 | 2000-07-11 | Microtronic A/S | Solid state silicon-based condenser microphone |
US6522762B1 (en) * | 1999-09-07 | 2003-02-18 | Microtronic A/S | Silicon-based sensor system |
US7439616B2 (en) * | 2000-11-28 | 2008-10-21 | Knowles Electronics, Llc | Miniature silicon condenser microphone |
US7434305B2 (en) * | 2000-11-28 | 2008-10-14 | Knowles Electronics, Llc. | Method of manufacturing a microphone |
US6781231B2 (en) * | 2002-09-10 | 2004-08-24 | Knowles Electronics Llc | Microelectromechanical system package with environmental and interference shield |
US7142682B2 (en) * | 2002-12-20 | 2006-11-28 | Sonion Mems A/S | Silicon-based transducer for use in hearing instruments and listening devices |
US6945115B1 (en) * | 2004-03-04 | 2005-09-20 | General Mems Corporation | Micromachined capacitive RF pressure sensor |
US7795695B2 (en) * | 2005-01-27 | 2010-09-14 | Analog Devices, Inc. | Integrated microphone |
US20070071268A1 (en) * | 2005-08-16 | 2007-03-29 | Analog Devices, Inc. | Packaged microphone with electrically coupled lid |
TW200714116A (en) * | 2005-05-16 | 2007-04-01 | Sensfab Pte Ltd | Silicon microphone |
US20060280319A1 (en) * | 2005-06-08 | 2006-12-14 | General Mems Corporation | Micromachined Capacitive Microphone |
US7202552B2 (en) * | 2005-07-15 | 2007-04-10 | Silicon Matrix Pte. Ltd. | MEMS package using flexible substrates, and method thereof |
DE602007007198D1 (de) * | 2006-03-30 | 2010-07-29 | Sonion Mems As | Akustischer einchip-mems-wandler und herstellungsverfahren |
JP2008067173A (ja) * | 2006-09-08 | 2008-03-21 | Yamaha Corp | マイクロフォンモジュール、その取付構造及び携帯電子機器 |
US20080130935A1 (en) * | 2006-09-27 | 2008-06-05 | Yamaha Corporation | Microphone package |
US8295528B2 (en) * | 2006-11-23 | 2012-10-23 | Epcos Ag | Board mounting of microphone transducer |
US7939932B2 (en) * | 2007-06-20 | 2011-05-10 | Analog Devices, Inc. | Packaged chip devices with atomic layer deposition protective films |
CN101346014B (zh) * | 2007-07-13 | 2012-06-20 | 清华大学 | 微机电系统麦克风及其制备方法 |
US7812418B2 (en) * | 2008-07-29 | 2010-10-12 | Fortemedia, Inc | Chip-scaled MEMS microphone package |
US8193596B2 (en) * | 2008-09-03 | 2012-06-05 | Solid State System Co., Ltd. | Micro-electro-mechanical systems (MEMS) package |
US8208662B2 (en) * | 2008-09-16 | 2012-06-26 | United Microelectronics Corp. | Microelectromechanical system microphone structure and microelectromechanical system microphone package structure |
US20100086146A1 (en) * | 2008-10-02 | 2010-04-08 | Fortemedia, Inc. | Silicon-based microphone package |
US8102015B2 (en) * | 2008-10-02 | 2012-01-24 | Fortemedia, Inc. | Microphone package with minimum footprint size and thickness |
US8351635B2 (en) * | 2008-11-05 | 2013-01-08 | Fortemedia, Inc. | Silicon-based microphone structure with electromagnetic interference shielding means |
US8325951B2 (en) * | 2009-01-20 | 2012-12-04 | General Mems Corporation | Miniature MEMS condenser microphone packages and fabrication method thereof |
US8472648B2 (en) * | 2009-01-20 | 2013-06-25 | General Mems Corporation | Miniature MEMS condenser microphone package and fabrication method thereof |
US8199939B2 (en) * | 2009-01-21 | 2012-06-12 | Nokia Corporation | Microphone package |
CN101765047A (zh) * | 2009-09-28 | 2010-06-30 | 瑞声声学科技(深圳)有限公司 | 电容麦克风及其制作方法 |
US8447057B2 (en) * | 2011-03-18 | 2013-05-21 | Analog Devices, Inc. | Packages and methods for packaging MEMS microphone devices |
-
2010
- 2010-05-25 US US12/786,723 patent/US8571249B2/en active Active
- 2010-05-28 CN CN201010193756.4A patent/CN101902678B/zh active Active
- 2010-05-28 TW TW99117143A patent/TWI472235B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020102004A1 (en) * | 2000-11-28 | 2002-08-01 | Minervini Anthony D. | Miniature silicon condenser microphone and method for producing same |
CN201138866Y (zh) * | 2007-12-24 | 2008-10-22 | 歌尔声学股份有限公司 | 改进结构的硅麦克风 |
CN101426166A (zh) * | 2008-11-07 | 2009-05-06 | 歌尔声学股份有限公司 | 硅麦克风 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103716741A (zh) * | 2012-10-01 | 2014-04-09 | 应美盛股份有限公司 | 用于恶劣环境的mems传声器系统 |
CN103716741B (zh) * | 2012-10-01 | 2018-08-21 | 应美盛股份有限公司 | 用于恶劣环境的mems传声器系统 |
CN103841747A (zh) * | 2012-11-21 | 2014-06-04 | 昆山华扬电子有限公司 | 内埋腔体多层印制板结构 |
CN104080033A (zh) * | 2013-03-26 | 2014-10-01 | 欧姆龙株式会社 | 麦克风 |
CN104080033B (zh) * | 2013-03-26 | 2018-01-30 | 欧姆龙株式会社 | 麦克风 |
CN105280561A (zh) * | 2014-05-27 | 2016-01-27 | 英飞凌科技股份有限公司 | 基于引线框架的mems传感器结构 |
CN105280561B (zh) * | 2014-05-27 | 2019-06-07 | 英飞凌科技股份有限公司 | 基于引线框架的mems传感器结构 |
CN104811881A (zh) * | 2015-04-29 | 2015-07-29 | 歌尔声学股份有限公司 | 压电扬声器及其形成方法 |
CN104811881B (zh) * | 2015-04-29 | 2019-03-19 | 歌尔股份有限公司 | 压电扬声器及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201127086A (en) | 2011-08-01 |
US8571249B2 (en) | 2013-10-29 |
TWI472235B (zh) | 2015-02-01 |
US20100303271A1 (en) | 2010-12-02 |
CN101902678B (zh) | 2016-06-22 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: WUXI NEOMEMS TECHNOLOGIES, INC. Free format text: FORMER OWNER: GENERAL MEMS CORPORATION Effective date: 20150123 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; TO: 214106 WUXI, JIANGSU PROVINCE |
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TA01 | Transfer of patent application right |
Effective date of registration: 20150123 Address after: 214106 No. 533, Xishan Avenue, Xishan Economic Development Zone, Wuxi, Jiangsu Applicant after: Wuxi Xinao Micro Sensor Technology Co.,Ltd. Address before: California, USA Applicant before: American General MEMS |
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CB03 | Change of inventor or designer information |
Inventor after: Wang Yunlong Inventor after: Wu Guanghua Inventor before: Wang Yunlong |
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C14 | Grant of patent or utility model | ||
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231227 Address after: 214000 No. 15, Xinzhou Road, Xinwu District, Wuxi City, Jiangsu Province Patentee after: Jinri Technology (Wuxi) Co.,Ltd. Address before: No. 533 Xishan Avenue, Xishan Economic Development Zone, Wuxi City, Jiangsu Province, 214106 Patentee before: Wuxi Xinao Micro Sensor Technology Co.,Ltd. |