CN101901742A - 用于薄晶粒分离和拾取的设备 - Google Patents

用于薄晶粒分离和拾取的设备 Download PDF

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CN101901742A
CN101901742A CN201010137588.7A CN201010137588A CN101901742A CN 101901742 A CN101901742 A CN 101901742A CN 201010137588 A CN201010137588 A CN 201010137588A CN 101901742 A CN101901742 A CN 101901742A
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crystal grain
die separation
separation equipment
contact surface
plate
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CN101901742B (zh
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陈文炜
欧玉璋
黄国威
庄智明
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ADVANCED AUTOMATIC APPARATUS AND MATERIAL Co Ltd
ASM Assembly Automation Ltd
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Abstract

一种用于薄晶粒分离和拾取的设备。本发明公开了一种用于剥离晶粒的晶粒分离设备,该晶粒装配在粘性膜上的一位置处,该晶粒分离设备包含有:多个活动板,其具有四边形的接触表面,该活动板相互相邻设置,该活动板还包含有中间活动板和外部活动板,该外部活动板位于该中间活动板的两侧;其中,该活动板的接触表面一起形成有联合接触表面,以在晶粒所在的该位置处支撑该粘性膜,每个活动板可相对于另一个活动板朝向和背离该晶粒移动。

Description

用于薄晶粒分离和拾取的设备
技术领域
本发明涉及半导体装配和封装过程中半导体芯片或半导体晶粒的处理,尤其涉及薄的半导体晶粒从其所装配的粘性膜上的分离和拾取。
背景技术
通常,在切割(singulation)过程中,包含有很多半导体晶粒的晶圆被安装在粘性膜上,其中,在每个单独的晶粒附着于粘性膜的同时其被分离。因此,晶粒从粘性膜处的分离和拾取是包含于用于装配电子封装件的晶粒键合和倒装芯片键合工序中的普通工序。高密度电子器件发展的一个趋势是通过堆积包含于电子封装件中的晶粒来提高同一个封装(footprint)处的电子器件的密度。堆积于封装件中的各个晶粒的厚度必须被减小以使得封装件的最终高度最小。
当晶粒的厚度被减小到低于4密耳(mils,大约100微米)时,在不损坏晶粒的情形下从粘性膜上分离晶粒成为一个具有挑战性的难题。厚度为3-4密耳(75-100微米)的晶粒已经用于大规模生产一段时间。厚度为2-3密耳(50-75微米)的晶粒的大规模生产目前正在准备中。在电子封装设计中研究和发展的实验正在进行针对于厚度为0.8-2密耳(20-50微米)的晶粒。所以,用于从粘性膜上可靠地分离很薄晶粒的装置正成为电子装配设备领域中的关键机器。
通常在晶粒键合工序中,在晶粒被传送到诸如晶粒堆积应用中的引线框、印刷线路板(PWB:printed wiring board)衬底之类的衬底或另一晶粒表面上以前,使用弹出和拾取工具将晶粒从粘性膜或切割膜处分离和拾取。在晶粒拾取工序中,在切割膜上的指定晶粒和具有上推销的弹出工具对齐定位,在切割膜被真空吸力朝下固定的同时,该上推销从底部抬起晶粒。然后,当上推销升起到一个大约的水平面时,在晶粒正从切割膜处提升的同时,夹体或拾取工具刚好定位在被部分分离的晶粒的顶面上方。在分离工序中,夹体提供了固定晶粒的真空吸附,并将该分离的晶粒从切割膜处传送到键合衬底。
存在几种不同形式的晶粒分离和拾取工具以便于将晶粒从其所装配的切割膜处进行分离。传统的工具包括一种针型的弹出器销(顶针,ejector pin)结构,其是一种用于将细小的晶粒从切割膜上分离的传统结构。其他形式的分离工具为锥形类型(pyramidal-type)的分离工具和滑道类型(slide-type)的分离工具。
图1所示为具有针型的弹出器销102的传统的晶粒分离和拾取工具100的示意图。该工具100的晶粒分离部分具有弹出器,该弹出器包含有弹出器块(ejector chuck)104、弹出器销102和弹出器盖(ejector cap)106。该工具100的拾取部分具有安装在夹体本体109上和设置在晶粒110上方的夹体108,该晶粒110位于切割膜112上,该切割膜和弹出器盖106的上平台表面107相接触。弹出器块104的垂直移动通过马达机构所驱动。弹出器销102设置在弹出器块104的顶部,并随着弹出器块104移动。对于细小尺寸如2×2mm2的晶粒,在待分离晶粒110中央设置的单个弹出器销102足以分离晶粒110。多个弹出器销102较合适地用于较大的晶粒,弹出器销102被均匀的分布而在晶粒110上获得均匀的上推力,以致于减少弹出器销102所引起的收缩效应(pinching effect)。弹出器块104和弹出器销102被设置在弹出器盖106内。真空通道114被弹出器盖106所封闭以便于提供真空吸附而有助于晶粒110自切割膜112的剥离。
当晶粒的厚度降低到小于100微米时,晶粒变得更加缺少硬度。为了分离晶粒,通过弹出器销的上推动作和切割膜上的真空吸附,剥离能量被施加于被分离的晶粒上,以便于克服晶粒和切割膜之间的临界的界面间的粘着强度。由于弹出器销所引起的收缩效应和晶粒的折弯,晶粒形变可能发生。当所施加的剥离能量达到临界的界面间的粘着强度时,晶粒可能从切割膜处被分离。但是,当晶粒形变的处理同样也达到晶粒的临界强度时,晶粒将会损坏或碎裂。晶粒的临界强度依赖于晶粒的不同特性,如晶粒的材质、晶圆细化(wafer thinning)、晶粒表面的图案和晶粒的切割。对于使用弹出器销的传统的晶粒拾取而言,收缩效应和折弯形变受到弹出器销的数量、布置和几何结构的影响。而且,对于大晶粒而言,设置在晶粒外缘的弹出器销阻止了分离到晶粒中心的扩散。因此,使用弹出器销的传统的拾取工具可能不适合于薄晶粒自切割膜处的分离。
锥形类型的分离工具包括大量的环形连接单元,以使用台体将半导体芯片自切割膜分离,从半导体芯片的外圆周部分朝向半导体芯片的中部。从外部的连接单元开始到中央的连接单元,环形连接单元被连续地抬高,以形成锥形形状。类似传统的针型分离工具,锥形形状的抬高了的环形连接单元施加压力到半导体芯片,由于该压力将导致半导体芯片可能碎裂或损坏。基于这个理由,对于将薄半导体芯片从切割膜分离而言,应用锥形类型的拾取装置同样也可能是不令人期望的。
滑道类型的分离工具包含有从一端到另一端移动并使用真空吸力吸附半导体芯片的滑道,以便于半导体芯片从切割膜处分离。由于在滑道从一端移动到另一端的同时滑道形成了真空,所以当半导体芯片的尺寸增加时,滑道被设置来移动所通过的距离增加。同样,由于滑道移动速度低,所以当使用滑道类型的拾取分离工具时生产率也低。
用于薄晶粒分离应用的现有技术的实例强调如下。出版号为2007/0228539A1、发明名称为“用于从金属薄片(foil)分离半导体芯片的方法和用于装配半导体芯片的设备”的美国专利公开了一种使用带有剥离端缘(stripping edge)的倾斜表面和弹出器销从切割膜如金属薄片处分离芯片的方法。剥离端缘相邻于具有弹出器销的凹槽区域。当分离晶粒时,在真空吸力施加于弹出器盖的同时,剥离端缘向上提升该弹出器盖的表面。当分离后的半导体通过晶圆平台的移动被传送到剥离端缘时,该分离后的半导体被弯曲以形成拱形。分离后的芯片被推至该凹槽并被弹出器销所拾取。这种分离工具的缺点是必须移动晶圆平台至剥离端缘处。为了移动晶圆平台,施加在切割膜和弹出器盖的表面之间的真空吸力必须很低,因为该真空吸力可能会硬拽晶圆和使得晶圆变形。无论如何,较低的真空吸附会减小所施加的剥离能量。而且,当晶粒的分离处于不可控的阶段时,该晶粒可能会失控。同时,在最后的拾取阶段,如上所讨论的弹出器销的使用不适合于拾取薄晶粒。
出版号为2002/0129899A1、发明名称为“晶粒拾取方法和晶粒拾取装置”的美国专利公开了一种可在水平方向上或者既在水平平面又在垂直方向上移动的活动板体,以从切割膜上分离晶粒。这种方法的缺点是:当活动板体被移动来分离晶粒时,被拾取的晶粒的下方没有支撑结构。在晶粒不被分离的位置,这可能引起晶粒碎裂。另外,围绕该被拾取晶粒的相邻晶粒被该活动板体所影响。
出版号为2008/0092360A1、发明名称为“薄半导体芯片拾取的装置和方法”的美国专利公开了一种晶粒分离装置,其具有台阶以支撑切割膜。相对于以上所讨论的活动板体,其优点是:其晶粒分离处理比较快速,相邻晶粒也不受该分离处理所影响。但是,这个装置包含有吸附单元沿着垂直轴线在低于弹出器盖表面的水平面上移动,这意味着晶粒不会被上推远离弹出器盖很多。而且,由于施加吸附真空,初始的分离要求切割膜顺应吸附单元的初始降低。这大大限制了在被分离晶粒上的所施加的剥离能量。因此,获得一种分离薄芯片的高效方法,其在避免上述现有技术的不足的同时,为该芯片提供支撑,并减小芯片上的收缩效应,这是令人期望的。
发明内容
因此,本发明的目的在于提供一种用于从切割膜上分离薄半导体芯片的改良的装置和方法,其在分离该薄半导体芯片之时减小了对薄半导体芯片的应力。
于是,本发明提供一种用于剥离晶粒的晶粒分离设备,该晶粒装配在粘性膜上的一位置处,该晶粒分离设备包含有:多个活动板,其具有四边形的接触表面,该活动板相互相邻设置,该活动板还包含有中间活动板和外部活动板,该外部活动板位于该中间活动板的两侧;其中,该活动板的接触表面一起形成有联合接触表面,以在晶粒所在的该位置处支撑该粘性膜,每个活动板可相对于另一个活动板朝向和背离该晶粒移动。
参阅后附的描述本发明实施例的附图,随后来详细描述本发明是很方便的。附图和相关的描述不能理解成是对本发明的限制,本发明的特点限定在权利要求书中。
附图说明
根据本发明较佳实施例所述的具体实施方式,结合附图很容易理解本发明,其中:
图1所示为具有针型的弹出器销的传统的晶粒分离和拾取工具的示意图。
图2所示为根据本发明第一较佳实施例所述的晶粒分离和拾取工具的示意图。
图3所示为图2中晶粒分离和拾取工具的活动支撑板体单元的立体示意图。
图4所示为图2中的活动支撑板体单元的平面示意图。
图5所示为根据本发明第二较佳实施例所述的晶粒分离和拾取工具的活动支撑板体单元的立体示意图。
图6A-图6H所示为利用本发明第一较佳实施例所述的晶粒分离和拾取工具,使用剥离晶粒的第一方法从粘性切割膜上用于晶粒的拾取流程示意图。
图7A-图7F所示为利用晶粒分离和拾取工具而剥离晶粒的第二方法。
具体实施方式
在此本发明较佳实施例将结合附图进行描述。
图2所示为根据本发明较佳实施例所述的晶粒分离和拾取工具10的示意图。用于剥离相对薄的晶粒14的活动支撑板体单元12居中设置在弹出器盖16内。该活动支撑板体单元12包含有中间活动支撑板13和多个位于该中间活动支撑板13两侧的外部活动支撑板11。各个活动支撑板11、13的尺寸可以是和其他的活动支撑板的尺寸大体相同。这些支撑板中的每个均具有四边形的上接触面,其可以是矩形或者正方形的形状。
活动支撑板体单元12的活动支撑板相互相邻设置,以便于活动支撑板的上表面形成联合接触表面26,其是连续且平整的(参见图3)。在晶粒14的初始分离过程中,这个联合接触表面26在晶粒14所在的位置和粘性切割膜18接触,其为晶粒14提供了最大的支撑,以致于晶粒14在从切割膜18处分离的同时,可以避免实质性的形变。和键合头22相连的夹体20设置在正被分离的晶粒14的上方。在将分离后的晶粒14拾取和传送离开切割膜18以前,通过设置在夹体20中的真空孔洞24,夹体20提供了真空吸附,并在晶粒14正被分离的同时而将其固定定位。
图3所示为图2中晶粒分离和拾取工具10的活动支撑板体单元12的立体示意图。较合适地设置有奇数个活动支撑板11、13,在中间活动支撑板13的相对两侧设有相同数量的外部活动支撑板11。在所描述的布置中,出现了两对外部活动支撑板11。每个活动支撑板11、13具有的尺寸:宽度x,长度y,其中x在从0.8mm到1.2mm的范围内,y是小于晶粒的长度0.6mm到1.6mm之间。马达驱动活动支撑板11、13沿着朝向和背离晶粒14的向上或者向下的方向相互独立移动。相邻的活动支撑板11、13彼此近距离设置,以在界面28处会合,以便于在活动支撑板之间(之内)基本上不存在间隙,而形成连续且平整的联合接触表面26,该联合接触表面26没有任何间隙,用于支撑切割膜18。
图4所示为图2中的活动支撑板体单元12的平面示意图。活动支撑板11、13设置在晶粒分离和拾取工具10的弹出器盖16内,并位于弹出器盖16的中心,以便于活动支撑板11、13的上表面和弹出器盖16的上表面大体位于同一个平面上。位于弹出器盖16的上表面或上平台17的真空孔洞30提供有真空吸附,以在晶粒分离期间靠着上平台17固定切割膜18。活动支撑板11、13相对于上平台17凸伸超越上平台17的表面。
相邻的四边形的活动支撑板11、13被设置在一起,以形成矩形或正方形的联合接触表面26,该联合接触表面26稍微小于被分离晶粒的平整表面。联合接触表面26具有四个端缘,每个端缘和晶粒14的端缘对应定位。也就是说,假定X、Y相当于晶粒14表面的宽度和长度,X和Y大于联合接触表面26的尺寸,以便于在晶粒14的端缘和活动支撑板体单元12相对应的端缘之间存在Δa的间隙距离,该距离Δa是在0.3mm到0.8mm范围之内。较合适地,从联合接触表面26的每侧到晶粒14相对应的每侧的距离大体是相同的。对于给定4×4mm2的晶粒,所需的活动支撑板11、13的数量可以如下获得:假定Δa=0.5mm,x=1mm,y=3mm,那么需要三个活动支撑板,包括两个外部活动支撑板11和一个中间活动支撑板13。
图5所示为根据本发明第二较佳实施例所述的晶粒分离和拾取工具10的活动支撑板体单元12’的立体示意图。外部活动支撑板11’和中间活动支撑板13’以相互接触的方式布置,如同图4所描述的活动支撑板体单元12的第一较佳实施例。在该布置中,同时也存在奇数数量的活动支撑板11’、13’结合在一起。但是,中间活动支撑板13’具有弯曲的顶部支撑表面或接触表面,同时外部活动支撑板11’具有平整的、彼此同高度的顶面。从而,由于相邻的活动支撑板11’之间不存在间隙,所以,包括中间活动支撑板13’所设置的位置在内,外部活动支撑板11’的平整几何顶面形成了一个位于中间活动支撑板13’每侧的连续的联合接触表面26。每个活动支撑板11’和中间活动支撑板13’具有和第一较佳实施例中的活动支撑板11、13相同的x、y尺寸,具有宽度x和长度y,其中,x在0.8mm到1.2mm范围内,y是比晶粒14的长度小0.6mm到1.6mm范围之间。活动支撑板11、13的长度y是比晶粒14的长度Y小0.6mm到1.6mm之间,以致于距离Δa相应地在0.3mm到0.8mm范围内。
当切割膜18是非紫外线类型(“non-UV”:non-ultraviolet)时,活动支撑板11’、13’的第二较佳实施例是可用的。在晶粒分离期间,即使当晶粒的大部分已经从切割膜18的表面分离时,non-UV切割膜18是黏着的。因此,将中间活动支撑板13’设计成具有半径或者曲度是有用的,以便于减小切割膜18和中间活动支撑板13’之间的接触区域,而易于移除晶粒14。
图6A-图6H所示为利用本发明第一较佳实施例所述的晶粒分离和拾取工具10,使用分离晶粒14的第一方法从粘性切割膜18上用于晶粒14的拾取流程示意图。使用这个第一方法,在中间活动支撑板13移动离开晶粒14以前,通过移动外部活动支撑板11远离晶粒14,支撑固定有晶粒14的切割膜18的联合接触表面26将会有效地剥离晶粒。在图6A中,使用了5个活动支撑板L1、L2、C、R1、R2。5个活动支撑板的顶面初始时是和弹出器盖16的上平台17在同一个平面上。待分离的晶圆中的晶粒14被对齐定位,并移动到弹出器盖16的中央。图6B所示为夹体20被定位在晶粒14的上表面的上方。在晶粒14的分离期间,通过夹体20将真空吸附施加在晶粒14上,以便于固定定位晶粒14。同时,真空吸附被施加在弹出器盖16上,以便于靠着弹出器盖16的上平台17固定切割膜18,如图6C所示。
在图6D中,在弹出器盖16的上平台17的上方,活动支撑板L1、L2、C、R1、R2上移一段距离H。首先,剥离能量被施加到晶粒14的边缘和角落。剥离能量的大小取决于真空吸附的强度和该5个活动支撑板的凸伸距离H。由于在贯穿分离处理过程中真空吸附通常保持常数,所以剥离能量的大小取决于该5个活动支撑板所移动的凸伸距离H。由于活动支撑板体12的上表面小于晶粒14的表面,所以晶粒14的边缘和角落区域将会在分离处理过程中首先分离。
切割膜18自晶粒14的边缘和角落处剥离之后,设置在活动支撑板体单元12相对两端的活动支撑板L1、R1向下移动一段距离L到弹出器盖16的上平台17下方的同一个规定水平面上,以便于切割膜18会从晶粒14的两端进一步分离一段距离,该距离和由活动支撑板L1、R1向下移动的距离L相对应,如图6E所示。接下来,依次是另一组两个活动支撑板L2、R2向下移动一段距离L,其后中间活动支撑板C向下移动一段相同的距离,如图6F、6G所示。最后,在晶粒14被夹体20提升并传输到键合位置以前,切割膜18将会完全从晶粒14处分离,如图6G所示。在图6H中,在开始分离下一个晶粒以前,活动支撑板L1、L2、C、R2、R1回复到其初始水平面上。现在,所有的活动支撑板是统一的高度,形成了和切割膜18接触的连续的联合接触表面26。
图7A-图7F所示为利用晶粒分离和拾取工具10而分离晶粒14的第二方法。使用这个第二方法,从联合接触表面26的一侧到联合接触表面26相对的另一侧通过连续地移动相邻的活动支撑板11、13远离晶粒14,支撑有晶粒14的联合接触表面26可有效地分离晶粒14。在弹出器盖16的上平台17的上方,活动支撑板L1、L2、C、R1、R2向上移动一段距离H,以便于剥离能量首先被施加到晶粒14的边缘和角落。切割膜18自晶粒14的边缘和角落处剥离之后,设置在活动支撑板体单元12一端的外部活动支撑板L1向下移动一段距离L到弹出器盖16的上平台17下方的一个规定水平面上,如图7A所示。所以,外部活动支撑板L1上方的切割膜18会自晶粒14相对应的边缘进一步分离,并向下拉扯一段和外部活动支撑板L1下移距离L相对应的距离。
接下来,L1内侧相邻的外部活动支撑板L2向下移动一段距离L,其后中间活动支撑板C向下移动一段相同的距离,如图7B、7C所示。当外部活动支撑板R2向下移动一段距离L时,切割膜18被进一步分离,如图7D所示。最后,活动支撑板R1向下移动一段距离L,如图7E所示,以便于在晶粒14被夹体20提升并传输到键合位置以前,切割膜18将会从晶粒14处完全分离。在图7F中,在开始分离下一个晶粒以前,活动支撑板L1、L2、C、R2、R1回复到其初始水平面上。现在,所有的活动支撑板是统一的高度,形成了和切割膜18接触的连续的联合接触表面26。
值得欣赏的是,使用根据本发明较佳实施例所述的活动支撑板体单元12、12’的晶粒分离和拾取工具10从粘性切割膜18分离晶粒14,和使用弹出器销相比,减小了晶粒14的形变,因为晶粒14上收缩效应所导致的局部应力得以最小。而由于活动支撑板11、13存在和晶粒14所安装的切割膜18最大的接触,所以剥离能量同样也得以增加。而且,在外部活动支撑板为平整的同时,具有根据本发明第二较佳实施例所述的带有弯曲顶面的中间活动支撑板,这实现了基本分离的晶粒和粘性切割膜最小的接触。
此处描述的本发明在所具体描述的内容基础上很容易产生变化、修正和/或补充,可以理解的是所有这些变化、修正和/或补充都包括在本发明的上述描述的精神和范围内。

Claims (16)

1.一种用于剥离晶粒的晶粒分离设备,该晶粒装配在粘性膜上的一位置处,该晶粒分离设备包含有:
多个活动板,其具有四边形的接触表面,该活动板相互相邻设置,该活动板还包含有中间活动板和外部活动板,该外部活动板位于该中间活动板的两侧;
其中,该活动板的接触表面一起形成有联合接触表面,以在晶粒所在的该位置处支撑该粘性膜,每个活动板可相对于另一个活动板朝向和背离该晶粒移动。
2.如权利要求1所述的晶粒分离设备,其中,该联合接触表面包含有连续的平整表面,以在晶粒所在的该位置处支撑该粘性膜。
3.如权利要求1所述的晶粒分离设备,其中,每个活动板具有和其他活动板大体相同的尺寸。
4.如权利要求1所述的晶粒分离设备,其中,该中间活动板的两侧具有相等数量的外部活动板。
5.如权利要求1所述的晶粒分离设备,其中,该中间活动板包含有弯曲接触表面,以支撑粘性膜。
6.如权利要求1所述的晶粒分离设备,其中,该联合接触表面的表面区域产生稍微小于晶粒平整表面区域的接触表面区域。
7.如权利要求6所述的晶粒分离设备,其中,该联合接触表面的每边和相对应的晶粒的每边之间的距离大体相等。
8.如权利要求6所述的晶粒分离设备,其中,每个活动板的长度比晶粒的长度小0.6mm到1.6mm之间。
9.如权利要求8所述的晶粒分离设备,其中,该联合接触表面的每边和相对应的晶粒的每边之间的距离是在0.3mm到0.8mm之间的范围内。
10.如权利要求1所述的晶粒分离设备,其中,该晶粒分离设备包含有奇数数量的活动板。
11.如权利要求10所述的晶粒分离设备,其中,该外部活动板包含有两组活动板。
12.如权利要求1所述的晶粒分离设备,其中,每个活动板独立于其他活动板移动。
13.如权利要求12所述的晶粒分离设备,其中,当联合接触表面支撑粘性膜时,在中间活动支撑板移离晶粒以前,外部活动板有效地移离晶粒,以剥离晶粒。
14.如权利要求12所述的晶粒分离设备,其中,当联合接触表面支撑粘性膜时,从该联合接触表面的一侧到联合接触表面的另一侧,相邻的活动板有效地依次移离晶粒。
15.如权利要求1所述的晶粒分离设备,其中,该活动板被紧密设置在一起以便于在相邻的活动板之间基本上不存在间隙。
16.如权利要求1所述的晶粒分离设备,该晶粒分离设备还包含有:
弹出器盖,其中活动板居中设置在该弹出器盖中,并相对于该弹出器盖的平台凸伸,该平台还包含有位于其表面上的真空孔洞,以提供真空吸附而在晶粒分离期间抵靠于该平台固定该粘性膜。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012116482A1 (en) * 2011-02-28 2012-09-07 Sandisk Semiconductor (Shanghai) Co., Ltd. Non-uniform vacuum profile die attach tip
CN104505362A (zh) * 2014-12-24 2015-04-08 苏州日月新半导体有限公司 用于芯片操作的机台、系统以及方法
CN106999119A (zh) * 2014-09-24 2017-08-01 B.布劳恩梅尔松根股份公司 封装纸作为稳定化装置的使用
CN108198780A (zh) * 2017-12-18 2018-06-22 重庆市长寿区普爱网络科技有限公司 电子产品制造装备
CN108238441A (zh) * 2016-12-27 2018-07-03 张家港康得新光电材料有限公司 膜片拾取设备
TWI786848B (zh) * 2021-09-24 2022-12-11 陽程科技股份有限公司 片材分離裝置及片材分離方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH706280B1 (de) * 2012-03-30 2016-03-15 Esec Ag Verfahren zum Ablösen eines Halbleiterchips von einer Folie.
KR101397750B1 (ko) * 2012-07-25 2014-05-21 삼성전기주식회사 칩 이젝터 및 이를 이용한 칩 탈착 방법
JP2015065367A (ja) * 2013-09-26 2015-04-09 株式会社テセック 剥離装置およびピックアップシステム
JP6349496B2 (ja) * 2014-02-24 2018-07-04 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
JP6258080B2 (ja) * 2014-03-07 2018-01-10 株式会社ディスコ 保護テープ剥離装置
SG10201403372SA (en) * 2014-06-18 2016-01-28 Mfg Integration Technology Ltd System and method for peeling a semiconductor chip from a tape using a multistage ejector
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
CN105514301B (zh) * 2016-01-21 2017-10-24 武汉华星光电技术有限公司 蒸镀装置及蒸镀方法
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
CH715447B1 (de) * 2018-10-15 2022-01-14 Besi Switzerland Ag Chip-Auswerfer.
KR102068358B1 (ko) 2019-02-14 2020-01-20 주식회사 케이셈테크몰러지 반도체 다이 분리장치
JP7326861B2 (ja) * 2019-05-17 2023-08-16 三菱電機株式会社 半導体製造装置及び半導体装置の製造方法
KR102127695B1 (ko) 2019-12-20 2020-06-29 위재우 반도체 다이 분리장치
US11600516B2 (en) * 2020-05-13 2023-03-07 Asmpt Singapore Pte. Ltd. Die ejector height adjustment
US20220165590A1 (en) * 2020-11-23 2022-05-26 Sj Semiconductor(Jiangyin) Corporation Die pickup device and method
JP2023064405A (ja) * 2021-10-26 2023-05-11 三菱電機株式会社 半導体製造装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1414602A (zh) * 2001-10-23 2003-04-30 富士通株式会社 用环形接触部件剥离半导体器件的方法和装置
US20040115904A1 (en) * 2002-11-27 2004-06-17 Cheung Yiu Ming Apparatus and method for thin die detachment
CN1700412A (zh) * 2004-05-11 2005-11-23 先进自动器材有限公司 用于半导体芯片分离的装置和方法
CN1707750A (zh) * 2004-05-28 2005-12-14 先进自动器材有限公司 用于晶片分离的剥离装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165310A (en) * 1998-09-29 2000-12-26 Lucent Technologies Inc. Apparatus and method for removing parts from an adhesive film
JP4021614B2 (ja) * 2000-12-11 2007-12-12 株式会社東芝 半導体素子のピックアップ用治具、半導体素子のピックアップ装置、半導体素子のピックアップ方法、半導体装置の製造方法及び半導体装置の製造装置
JP4482243B2 (ja) * 2001-03-13 2010-06-16 株式会社新川 ダイのピックアップ方法及びピックアップ装置
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
KR20050092184A (ko) * 2004-03-15 2005-09-21 삼성전자주식회사 다이 픽업 장치 및 이를 이용한 다이 픽업 방법
EP1587138B1 (de) * 2004-04-13 2007-05-30 Oerlikon Assembly Equipment AG, Steinhausen Einrichtung für die Montage von Halbleiterchips und Verfahren zum Ablösen eines Halbleiterchips von einer Folie
KR20070120319A (ko) * 2006-06-19 2007-12-24 삼성전자주식회사 한 쌍의 이젝터들을 구비하는 반도체 칩의 탈착 장치 및이를 이용한 반도체 칩의 탈착 방법
US20080092369A1 (en) * 2006-09-22 2008-04-24 Chi-Ti Liao Combination of two machines for making a cap of containers
KR100817068B1 (ko) 2006-10-24 2008-03-27 삼성전자주식회사 박형의 반도체 칩 픽업 장치 및 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1414602A (zh) * 2001-10-23 2003-04-30 富士通株式会社 用环形接触部件剥离半导体器件的方法和装置
US20040115904A1 (en) * 2002-11-27 2004-06-17 Cheung Yiu Ming Apparatus and method for thin die detachment
CN1700412A (zh) * 2004-05-11 2005-11-23 先进自动器材有限公司 用于半导体芯片分离的装置和方法
CN1707750A (zh) * 2004-05-28 2005-12-14 先进自动器材有限公司 用于晶片分离的剥离装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012116482A1 (en) * 2011-02-28 2012-09-07 Sandisk Semiconductor (Shanghai) Co., Ltd. Non-uniform vacuum profile die attach tip
CN102782829A (zh) * 2011-02-28 2012-11-14 晟碟半导体(上海)有限公司 具有非均匀真空分布的裸芯安装端部
CN102782829B (zh) * 2011-02-28 2015-04-01 晟碟半导体(上海)有限公司 具有非均匀真空分布的裸芯安装端部
US9038264B2 (en) 2011-02-28 2015-05-26 Sandisk Semiconductor (Shanghai) Co., Ltd. Non-uniform vacuum profile die attach tip
CN106999119A (zh) * 2014-09-24 2017-08-01 B.布劳恩梅尔松根股份公司 封装纸作为稳定化装置的使用
CN106999119B (zh) * 2014-09-24 2023-03-24 B.布劳恩梅尔松根股份公司 封装纸作为稳定化装置的使用
CN104505362A (zh) * 2014-12-24 2015-04-08 苏州日月新半导体有限公司 用于芯片操作的机台、系统以及方法
CN108238441A (zh) * 2016-12-27 2018-07-03 张家港康得新光电材料有限公司 膜片拾取设备
CN108198780A (zh) * 2017-12-18 2018-06-22 重庆市长寿区普爱网络科技有限公司 电子产品制造装备
CN108198780B (zh) * 2017-12-18 2020-05-19 重庆市长寿区普爱网络科技有限公司 电子产品制造装备
TWI786848B (zh) * 2021-09-24 2022-12-11 陽程科技股份有限公司 片材分離裝置及片材分離方法

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