CN1018970B - 制磷掺杂源用的掺杂组合物及掺杂硅片的方法 - Google Patents

制磷掺杂源用的掺杂组合物及掺杂硅片的方法

Info

Publication number
CN1018970B
CN1018970B CN88103168A CN88103168A CN1018970B CN 1018970 B CN1018970 B CN 1018970B CN 88103168 A CN88103168 A CN 88103168A CN 88103168 A CN88103168 A CN 88103168A CN 1018970 B CN1018970 B CN 1018970B
Authority
CN
China
Prior art keywords
sheet
source
doped
dopant
silicon chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN88103168A
Other languages
English (en)
Chinese (zh)
Other versions
CN88103168A (zh
Inventor
詹姆斯·埃里奇·拉普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Techneglas LLC
Original Assignee
Owens Illinois Television Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Owens Illinois Television Products Inc filed Critical Owens Illinois Television Products Inc
Publication of CN88103168A publication Critical patent/CN88103168A/zh
Publication of CN1018970B publication Critical patent/CN1018970B/zh
Expired legal-status Critical Current

Links

Classifications

    • H10P32/00—
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/6303—Inorganic additives
    • C04B35/6306—Binders based on phosphoric acids or phosphates
    • C04B35/6309—Aluminium phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Glass Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN88103168A 1987-05-29 1988-05-28 制磷掺杂源用的掺杂组合物及掺杂硅片的方法 Expired CN1018970B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US056,621 1987-05-29
US07/056,621 US4800175A (en) 1987-05-29 1987-05-29 Phosphorous planar dopant source for low temperature applications

Publications (2)

Publication Number Publication Date
CN88103168A CN88103168A (zh) 1988-12-28
CN1018970B true CN1018970B (zh) 1992-11-04

Family

ID=22005609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN88103168A Expired CN1018970B (zh) 1987-05-29 1988-05-28 制磷掺杂源用的掺杂组合物及掺杂硅片的方法

Country Status (5)

Country Link
US (1) US4800175A (cg-RX-API-DMAC10.html)
JP (1) JPS63307719A (cg-RX-API-DMAC10.html)
KR (1) KR970003905B1 (cg-RX-API-DMAC10.html)
CN (1) CN1018970B (cg-RX-API-DMAC10.html)
GB (1) GB2205092B (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0439281U (cg-RX-API-DMAC10.html) * 1990-08-01 1992-04-02
US5086016A (en) * 1990-10-31 1992-02-04 International Business Machines Corporation Method of making semiconductor device contact including transition metal-compound dopant source
US5536686A (en) * 1992-10-20 1996-07-16 The Research Foundation Of State University Of New York At Buffalo Phosphate binders for metal-matrix composites
US5350460A (en) * 1992-12-08 1994-09-27 Techneglas, Inc. High temperature phosphorus oxide diffusion source
US5350461A (en) * 1992-12-08 1994-09-27 Techneglas, Inc. Low temperature P2 O5 oxide diffusion source
KR100358129B1 (ko) * 1995-02-27 2003-01-24 주식회사 하이닉스반도체 산화물이도핑된폴리실리콘막을사용한반도체소자제조방법
KR101484833B1 (ko) * 2010-04-23 2015-01-21 히타치가세이가부시끼가이샤 ｎ 형 확산층 형성 조성물, ｎ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
WO2011132780A1 (ja) * 2010-04-23 2011-10-27 日立化成工業株式会社 ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP5625537B2 (ja) * 2010-06-24 2014-11-19 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5691269B2 (ja) * 2010-07-07 2015-04-01 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5803080B2 (ja) * 2010-09-24 2015-11-04 日立化成株式会社 ｐ型拡散層形成組成物、ｐ型拡散層形成組成物の製造方法、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5703673B2 (ja) * 2010-10-12 2015-04-22 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
KR20140041423A (ko) * 2011-02-17 2014-04-04 히타치가세이가부시끼가이샤 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 셀의 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US3920882A (en) * 1973-04-16 1975-11-18 Owens Illinois Inc N-type dopant source
US3998668A (en) * 1973-12-21 1976-12-21 Owens-Illinois, Inc. Aluminum metaphosphate dopant sources
JPS5171777A (ja) * 1974-12-19 1976-06-21 Denki Kagaku Kogyo Kk Uehaajohandotaidoopuzai
JPS5171774A (ja) * 1974-12-19 1976-06-21 Denki Kagaku Kogyo Kk Uehaajohandotaidoopuzai
JPS5171773A (ja) * 1974-12-19 1976-06-21 Denki Kagaku Kogyo Kk Uehaajohandotaidoopuzai
JPS5171776A (ja) * 1974-12-19 1976-06-21 Denki Kagaku Kogyo Kk Uehaajohandotaidoopuzai
JPS5171775A (ja) * 1974-12-19 1976-06-21 Denki Kagaku Kogyo Kk Uehaajohandotaidoopuzai
JPS5171778A (ja) * 1974-12-19 1976-06-21 Denki Kagaku Kogyo Kk Uehaajohandotaidoopuzai
US4033790A (en) * 1976-07-29 1977-07-05 Denki Kagaku Kogyo Kabushiki Kaisha Solid diffusion dopants for semiconductors and method of making the same
US4175988A (en) * 1978-03-16 1979-11-27 Owens-Illinois, Inc. Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus
US4141738A (en) * 1978-03-16 1979-02-27 Owens-Illinois, Inc. Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus
JPS5531611A (en) * 1978-08-28 1980-03-06 Keiichi Senmaichi Hard type airship capable of landing water
JPS5732026A (en) * 1980-08-01 1982-02-20 Diesel Kiki Co Ltd Fuel injection device

Also Published As

Publication number Publication date
JPS63307719A (ja) 1988-12-15
KR970003905B1 (ko) 1997-03-22
GB8808418D0 (en) 1988-05-11
CN88103168A (zh) 1988-12-28
KR880014655A (ko) 1988-12-24
GB2205092A (en) 1988-11-30
US4800175A (en) 1989-01-24
GB2205092B (en) 1991-08-07
JPH0239089B2 (cg-RX-API-DMAC10.html) 1990-09-04

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C06 Publication
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C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
OR01 Other related matters
C17 Cessation of patent right
CX01 Expiry of patent term