CN101887841A - Adhesive tape expansion method - Google Patents
Adhesive tape expansion method Download PDFInfo
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- CN101887841A CN101887841A CN2010101705980A CN201010170598A CN101887841A CN 101887841 A CN101887841 A CN 101887841A CN 2010101705980 A CN2010101705980 A CN 2010101705980A CN 201010170598 A CN201010170598 A CN 201010170598A CN 101887841 A CN101887841 A CN 101887841A
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- wafer
- splicing tape
- adhesive tape
- tape
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- 238000000034 method Methods 0.000 title claims abstract description 81
- 239000002390 adhesive tape Substances 0.000 title claims abstract description 65
- 239000000126 substance Substances 0.000 claims description 34
- 230000011218 segmentation Effects 0.000 claims description 16
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000002542 deteriorative effect Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 124
- 238000001179 sorption measurement Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007665 sagging Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
The invention provides an adhesive tape expansion method, which can make the wafer fracture into individual components reliably along the deteriorating layer. The adhesive tape expansion method includes: an adhesive tape first soft process, heating the wafer worktable, thereby soften the part of the adhesive tape adhered with wafer; an adhesive tape expansion process, pulling down the outer cylinder to locate at the expansion position, to expand the adhesive tape, so that the wafer fractures along the deteriorating layer; and an adhesive tape holding process, so that the wafer holding worktable generates an attractive force, thereby performing attraction holding to the adhesive tape; an adhesive tape second soft process, so that the outer cylinder ascends to locate at the stand-by station, and then heating the adhesive tape between the external circumstance and the ring frame to heat and soften it; and a loose removing process, cooling the adhesive tape between the external circumstance of the wafer and the ring frame to loosely remove it.
Description
Technical field
The present invention relates to make the splicing tape that is pasted with wafer extended method to the splicing tape of the radial direction expansion of ring-shaped frame.
Background technology
Integrated circuit), LSI a plurality of devices such as (Large-scale Integration large scale integrated circuits) are formed and cancellately cut apart that preset lines is divided and the wafer that forms about IC (Integrated Circuit:, by cutter sweep or laser processing device described wafer is divided into device one by one, the device after cutting apart is widely used in various electronic equipments such as mobile phone, personal computer.
Thereby cutter sweep is to utilize the cutting tool with extremely thin cutting edge to be divided into the device of device one by one along cutting apart preset lines cutting wafer, and this cutter sweep can be divided into device one by one reliably with wafer.
In addition, the laser processing device irradiation has the laser beam of radioparent wavelength with respect to wafer, thereby form metamorphic layer along cutting apart the inside of preset lines at wafer, then by making the adhesive tape expansion that is supported with wafer come wafer is applied external force, thereby make wafer be divided into device (for example, with reference to TOHKEMY 2004-349623 communique) one by one along the metamorphic layer fracture.
On the other hand, in recent years, electric equipments such as mobile phone and personal computer are pursued lightweight more and miniaturization, need thinner device.As the technology that wafer is divided into thinner device, developed the cutting techniques of so-called precut method, and this technology just is practical (for example, with reference to Japanese kokai publication hei 11-40520 communique).
Should precut method be such technology: from the surface of semiconductor wafer along cut apart preset lines form desired depth (with device finish the suitable degree of depth of thickness) slot segmentation, then grinding is carried out at the back side of the semiconductor wafer that is formed with slot segmentation on the surface, make slot segmentation be exposed to this back side, thereby this semiconductor wafer is divided into device one by one, and this precut method can be machined to the thickness of device below the 100 μ m.
Patent documentation 1: TOHKEMY 2004-349623 communique
Patent documentation 2: Japanese kokai publication hei 11-40520 communique
But, when the inside of using laser processing device at wafer forms metamorphic layer along cutting apart preset lines, thereby and the expansion splicing tape with wafer when metamorphic layer is divided into one by one device, have such problem: the splicing tape after the expansion produces lax, thereby device is in contact with one another and damages when the conveyance wafer.In addition, under the sagging state of the central portion of splicing tape, existence can't be with the wafer storage that is supported on ring-shaped frame through the splicing tape problem in the box.
(Die Attach Film: chip join die bonding film) will be pasted on film by precut method and has been divided into the back side of the wafer of device one by one and then DAF has been pasted on splicing tape and expansion by splicing tape comes to cut apart accordingly under the situation of DAF with device one by one, also can produce the problems referred to above being called as DAF.
Summary of the invention
The present invention finishes in view of such problem, thereby its purpose is to provide a kind of splicing tape that is pasted with wafer of can expanding to make the extended method of wafer along the splicing tape of metamorphic layer fracture.
Another object of the present invention is to provide a kind of can be by expanding the bonding extended method of cutting apart the splicing tape of die bonding film with device one by one accordingly that brings, wherein said die bonding film sticks on by precut method and has been divided into the back side of the wafer of device one by one.
The invention of being put down in writing according to scheme 1, a kind of extended method of splicing tape is provided, thereby the extended method of this splicing tape is to come the splicing tape that is pasted with wafer expanded by the adhesive tape expansion device to make the extended method of wafer along the splicing tape of metamorphic layer fracture, described adhesive tape expansion device comprises: the framework retaining member, it keeps the ring-shaped frame that is equipped on the splicing tape periphery, be pasted with the wafer with metamorphic layer on the described splicing tape, described metamorphic layer is formed at wafer inside along forming the cancellate preset lines of cutting apart; Wafer keeps workbench, and it keeps the wafer that is pasted on described splicing tape; And mobile member, it makes described framework retaining member and described wafer keep workbench to relatively move between position of readiness and expanding location, the extended method of described splicing tape is characterised in that, the extended method of this splicing tape comprises following operation: wafer mounting operation, in this wafer mounting operation, the wafer mounting that will be supported on described ring-shaped frame through described splicing tape keeps on the workbench in described wafer, and utilizes described framework retaining member to keep described ring-shaped frame; Adhesive tape first soft chemical industry preface in this adhesive tape first soft chemical industry preface, keeps workbench to heat to described wafer, thereby the part that is pasted with wafer of described splicing tape is limbered up; Adhesive tape expansion process, in this adhesive tape expansion process, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described expanding location, make described adhesive tape expansion, thereby wafer is ruptured along described metamorphic layer; Splicing tape keeps operation, keeps in the operation at this splicing tape, makes described wafer keep workbench to produce attraction, thereby described splicing tape is attracted to keep; The splicing tape second soft chemical industry preface, in this splicing tape second soft chemical industry preface, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described position of readiness, and the periphery of wafer and the described splicing tape between the described ring-shaped frame heated it is limbered up; Loose removing process after having implemented the described splicing tape second soft chemical industry preface, is implemented this loose removing process, in this loose removing process, the periphery of wafer and the described splicing tape between the described ring-shaped frame is cooled off, and removes thereby will relax; And take out of operation, and take out of in the operation at this, remove described framework retaining member, and remove the attraction that described wafer keeps workbench, the wafer that is pasted on described splicing tape is taken out of from described adhesive tape expansion device with described ring-shaped frame.
The invention of being put down in writing according to scheme 2, a kind of extended method of splicing tape is provided, the extended method of this splicing tape is to come the splicing tape that is pasted with wafer through die bonding film is expanded by the adhesive tape expansion device, thereby make the width increase of slot segmentation and make the extended method of described die bonding film along the splicing tape of described slot segmentation fracture, described adhesive tape expansion device comprises: the framework retaining member, it keeps the ring-shaped frame that is equipped on the splicing tape periphery, be pasted with wafer through described die bonding film on the described splicing tape, described wafer has and forms cancellate slot segmentation; Wafer keeps workbench, and it keeps the wafer that is pasted on described splicing tape; And mobile member, it makes described framework retaining member and described wafer keep workbench to relatively move between position of readiness and expanding location, the extended method of described splicing tape is characterised in that, the extended method of this splicing tape comprises following operation: wafer mounting operation, in this wafer mounting operation, the wafer mounting that will be supported on described ring-shaped frame through described die bonding film and described splicing tape keeps on the workbench in described wafer, and utilizes described framework retaining member to keep described ring-shaped frame; Adhesive tape first soft chemical industry preface in this adhesive tape first soft chemical industry preface, keeps workbench to heat to described wafer, thereby the part that is pasted with wafer of described splicing tape is limbered up; Adhesive tape expansion process, in this adhesive tape expansion process, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described expanding location, make described adhesive tape expansion, thereby make the width increase of described slot segmentation and described die bonding film is ruptured along described slot segmentation; Splicing tape keeps operation, keeps in the operation at this splicing tape, makes described wafer keep workbench to produce attraction, thereby described splicing tape is attracted to keep; The splicing tape second soft chemical industry preface, in this splicing tape second soft chemical industry preface, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described position of readiness, and the periphery of wafer and the described splicing tape between the described ring-shaped frame heated it is limbered up; Loose removing process after having implemented the described splicing tape second soft chemical industry preface, is implemented this loose removing process, in this loose removing process, the periphery of wafer and the described splicing tape between the described ring-shaped frame is cooled off, and removes thereby will relax; And take out of operation, and take out of in the operation at this, remove described framework retaining member, and remove the attraction that described wafer keeps workbench, the wafer that is pasted on described splicing tape is taken out of from described adhesive tape expansion device with described ring-shaped frame.
Preferably: splicing tape is made of polyvinyl chloride or polyolefin, and the heating-up temperature in the adhesive tape first soft chemical industry preface is 40 ℃～100 ℃, and the heating-up temperature in the splicing tape second soft chemical industry preface is 80 ℃～300 ℃.
The invention of being put down in writing according to scheme 1, heat in the part that is pasted with wafer and make after it limbers up splicing tape, splicing tape is expanded, thereby wafer is divided into device one by one, the part that is pasted with wafer to splicing tape attracts to keep then, to keep the state after cutting apart, when being back to position of readiness, to being heated by wafer and the folded interior lax splicing tape in zone of ring-shaped frame, make the spring return of splicing tape, by cooling off, splicing tape is further shunk, thereby splicing tape form the state of tightening as drum with the power of desiring to make splicing tape be back to original state with complementing each other.Its result is, kept adjacent device and the interval between the device, can abatement device be in contact with one another and the problem damaged.
The invention of being put down in writing according to scheme 2, heat in the part that is pasted with wafer and make after it limbers up splicing tape, splicing tape is expanded, thereby cut apart die bonding film accordingly with device one by one, the part that is pasted with die bonding film to splicing tape attracts to keep then, to keep the state after cutting apart, when being back to position of readiness, to being heated by wafer and the folded interior lax splicing tape in zone of ring-shaped frame, make the spring return of splicing tape, by cooling off, splicing tape is further shunk, thereby splicing tape form the state of tightening as drum with the power of desiring to make splicing tape be back to original state with complementing each other.Its result is, kept adjacent device and the interval between the device, can abatement device be in contact with one another and the problem damaged.
In addition, according to the present invention, because the central portion of splicing tape is not sagging, so the wafer that is supported on ring-shaped frame through splicing tape easily can be received in the box.
Description of drawings
Fig. 1 is the approximate three-dimensional map of laser processing device.
Fig. 2 is the block diagram of laser beam irradiation unit.
Fig. 3 is the stereogram that is supported on the wafer of ring-shaped frame through cutting belt.
Fig. 4 is the key diagram of metamorphic layer formation method.
Fig. 5 is the longitudinal section of adhesive tape expansion device.
Fig. 6 is the key diagram of adhesive tape expansion process.
Fig. 7 is the key diagram of the splicing tape second soft chemical industry preface.
Fig. 8 is the key diagram of loose removing process.
Fig. 9 and Fig. 5 are similar, and it is at the longitudinal section that is pasted with the adhesive tape expansion device under the state of the wafer after being divided into device one by one on the splicing tape through DAF.
Figure 10 is the key diagram of adhesive tape expansion process.
Label declaration
W: wafer; T: splicing tape (cutting belt); F: ring-shaped frame; 2: laser processing device; 20: chuck table; 46: laser beam irradiation unit; 50: concentrator (laser head); 60: the adhesive tape expansion device; 62: wafer keeps workbench; 74: urceolus; 76: binding clasp; 84:DAF (die bonding film).
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are elaborated.Fig. 1 represents the approximate three-dimensional map of laser processing device 2.Laser processing device 2 includes pair of guide rails 6, and this a pair of guide rail 6 is installed on the stationary base 4 and along X-direction and extends.
X-axis movable block 8 is being processed direction of feed, is being that X-direction moves that by X-axis feed mechanism (X-axis feeding member) 14 this X-axis feed mechanism 14 is made of ball-screw 10 and pulse motor 12.On X-axis movable block 8, chuck table 20 is installed through cylindric support unit 22.
Chuck table 20 has the adsorption section (absorption chuck) 24 that is formed by porous ceramic etc.Be equipped with a plurality of (being 4 the in the present embodiment) binding clasp 26 that is used to clamp ring-shaped frame F shown in Figure 3 at chuck table 20.
The X-axis feed mechanism comprises: ruler 16, and it is provided on the stationary base 4 along guide rail 6; And read head 18, the lower surface that it is equipped on X-axis movable block 8 is used to read the X coordinate figure of ruler 16.Read head 18 is connected with the controller of laser processing device 2.
On stationary base 4, also be fixed with along the pair of guide rails 28 of Y direction elongation.Y-axis shift motion block 30 moves in Y direction by Y-axis feed mechanism (index feed mechanism) 36, and this Y-axis feed mechanism 36 is made of ball-screw 32 and pulse motor 34.
Be formed with along a pair of (only illustrating one among the figure) guide rail 38 of Z-direction elongation at y-axis shift motion block 30.Z axle movable block 40 moves in Z-direction by Z axle feed mechanism 44, and this Z axle feed mechanism 44 is made of not shown ball-screw and pulse motor 42.
In the housing 48 of laser beam irradiation unit 46, shown in the block diagram of Fig. 2, be equipped with laser beam member 51 and laser beam modulation member 53.
As laser beam member 51, can use YAG laser oscillator or YVO4 laser oscillator.Laser beam modulation member 53 comprises repetition rate setting element 55, laser beam pulses width setup member 57 and laser beam wavelength setting element 59.
The repetition rate setting element 55, laser beam pulses width setup member 57 and the laser beam wavelength setting element 59 that constitute laser beam modulation member 53 are members of known form, omit its detailed explanation in this manual.
Alignment unit (calibrated component) 52 is installed on housing 48.Alignment unit 52 has the image unit (shooting member) 54 that the wafer W that remains in chuck table 20 is made a video recording.Concentrator 50 and image unit 54 are configured to form a line in X-direction.
As shown in Figure 3, the surface as the semiconductor wafer W of the processing object of laser processing device 2 is formed with the first spacing track S1 and the second spacing track S2 orthogonally, is formed with a large amount of device D in the zone that is marked off by the first spacing track S1 and the second spacing track S2.
Wafer W is pasted on the cutting belt T as splicing tape, and the peripheral part of cutting belt T is pasted on ring-shaped frame F.Thus, wafer W becomes the state that is supported on ring-shaped frame F through cutting belt T, clamps ring-shaped frame F by utilizing binding clasp shown in Figure 1 26, and this wafer W is supported and is fixed on the chuck table 20.
When wafer W attracts to remain on the chuck table 20 and the clamped device 26 of ring-shaped frame F when clamping, implement to be used to detect the calibration that should utilize the zone that laser head 50 processes.
About this calibration, making a video recording in the zone that utilizes image unit 54 correspondences to carry out laser processing, according to the image that is obtained by shooting, detects the spacing track that should carry out laser processing by image processing such as pattern match, finishes this calibration thus.
After calibration finishes, shown in Fig. 4 (A), chuck table 20 is moved to the laser beam irradiation at concentrator 50 places of the laser beam irradiation unit 46 of illuminating laser beam zone, the end of the spacing track S1 after the calibration is positioned laser beam irradiation unit 46 concentrator 50 under.
Then, chuck table 20 is moved, shown in Fig. 4 (B), behind the other end of the irradiation position arrival interval road S1 of the concentrator 50 of laser beam irradiation unit 46 to X-direction, the irradiation of pulse laser beam is stopped, and the mobile of chuck table 20 stopped.
When carrying out this laser processing, the focal point P of pulse laser beam is positioned the thickness direction pars intermedia of wafer W shown in Fig. 4 (A).Its result is, shown in Fig. 4 (B), is formed with the metamorphic layer 58 along spacing track S1 in the inside of wafer W.
The laser processing condition that forms metamorphic layer 58 in the inside of wafer W for example is set as follows.
Light source: LD excites Q switching Nd:YVO4 laser
Wavelength: 1064nm
Average output: 1W
Pulse duration: 40ns
Repetition rate: 100kHz
Focal point diameter: φ 1 μ m
Processing feed speed: 100mm/ second
As mentioned above, after all the spacing track S1 along wafer W have implemented metamorphic layer and form operation, chuck table 20 revolved turn 90 degrees, implement metamorphic layer along the second spacing track S2 and form operation with the first spacing track S1 quadrature.Thus, formed metamorphic layer in the inside of wafer W along all spacing track S1, S2.
About make like this wafer W fracture that is formed with metamorphic layer 58 along spacing track S1, S2 be divided into the extended method of the splicing tape of the first embodiment of the invention of device one by one by the adhesive tape expansion device, describe with reference to Fig. 5 to Fig. 8.
With reference to Fig. 5, show the longitudinal section of the adhesive tape expansion device 60 under the state that is equipped with wafer W on the wafer maintenance workbench 62, described wafer W is formed with along the metamorphic layer of spacing track S1, S2.
Wafer keeps workbench 62 to have the adsorption section (absorption chuck) 64 that is formed by porous ceramic etc.Below adsorption section 64, be equipped with the heater 66 that adsorption section 64 is heated, be equipped with heat insulating member 68 at the downside of heater 66.Wafer keeps the centre bore 70 of workbench 62 to be connected with vacuum attraction source 72.
Keep workbench 62 to be equipped with urceolus 74 round wafer.By not shown mobile member, urceolus 74 moves between position of readiness shown in Figure 5 and expanding location shown in Figure 6 along the vertical direction.
At urceolus 74 a plurality of binding clasps 76 that conduct keeps the framework retaining member of ring-shaped frame F are installed.Space 78 between wafer maintenance workbench 62 and the urceolus 74 constitutes selectively and is connected with cooling source 82 with heating source 80.
Below, the extended method of the splicing tape of first embodiment of the invention is elaborated.At first, as shown in Figure 5, will be positioned in wafer through the wafer W that splicing tape T is supported on ring-shaped frame F and keep on the workbench 62, clamp ring-shaped frame F by binding clasp 76 as the framework retaining member.At this moment, be failure to actuate in attraction source 72, thereby do not make adsorption section 64 produce attraction.
Then, implement adhesive tape first soft chemical industry preface, in this adhesive tape first soft chemical industry preface, keep the adsorption section 64 of workbench 62 to heat by 66 pairs of wafers of heater, thereby the part that is pasted with wafer W of splicing tape T is limbered up.The heating-up temperature of this moment is preferably in 40 ℃～100 ℃ scope.
Then, implement adhesive tape expansion process, in this adhesive tape expansion process, make the mobile member work of urceolus 74, as shown in Figure 6, keep workbench 62 to drag down and be positioned expanding location with respect to wafer urceolus 74, thereby splicing tape T is expanded to radial direction to the arrow A direction.Thus, because wafer W has been applied external force, wafer W is divided into device D one by one along metamorphic layer 58 fractures.
Thereby after implementing adhesive tape expansion process and wafer W being divided into one by one device D, make 72 work of attraction source, make wafer keep the adsorption section 64 of workbench 62 to produce attractions, thereby utilize adsorption section 64 to attract to keep splicing tape T under the state that radial direction has been expanded.
Then, make the mobile member work of urceolus 74, as shown in Figure 7, be positioned position of readiness thereby urceolus 74 is risen to the arrow B direction.When the splicing tape T after expanding location is by temporary transient expansion is back to position of readiness as illustrated in fig. 6, as shown in Figure 7, produce lax at splicing tape T.
Therefore, implement the splicing tape second soft chemical industry preface, in this splicing tape second soft chemical industry preface, heat as shown by arrow C, it is limbered up by the periphery of 80 pairs of wafer W of heating source and the splicing tape T between the ring-shaped frame F.Thus, the spring return of splicing tape T desires to make splicing tape T to return the power of original state thereby produce.Heating-up temperature in the splicing tape second soft chemical industry preface is preferably in 80 ℃～300 ℃ scope.
After having implemented the splicing tape second soft chemical industry preface, as shown in Figure 8, heating source 80 is switched to cooling source 82, the periphery of wafer W and the splicing tape T between the ring-shaped frame F are cooled off as shown by arrow D.Thus, splicing tape T further shrinks and form the state of tightening as drum, thus lax being removed.In addition, this cooling is the cooling of carrying out at normal temperatures or cools off energetically between-5 ℃～20 ℃.
In the present embodiment, utilize adsorption section 64 to attract to keep splicing tape T, thereby kept the extended mode of the part that is pasted with wafer W of splicing tape T, removed the lax of splicing tape T simultaneously, therefore kept the state after interval between the adjacent device D increases, eliminated that device is in contact with one another and the problem damaged.And, because the central portion of splicing tape T is not sagging, so the wafer W that is supported on ring-shaped frame F through splicing tape T easily can be received in the box.
After the loose removing process of having implemented splicing tape T, remove the clamping of binding clasp 76, and remove the attraction that wafer keeps workbench 62, the wafer W that is pasted on splicing tape T is taken out of from adhesive tape expansion device 60 with ring-shaped frame F.
Next, with reference to Fig. 9 and Figure 10, the extended method of the splicing tape of second embodiment of the invention is described.This second execution mode is to paste the execution mode that DAF (die bonding film) and the expansion by splicing tape come to cut apart accordingly with device one by one DAF utilizing precut method to be divided into the back side of the wafer W of device one by one.
As everyone knows; should precut method be such technology: from the surface of wafer W along cut apart preset lines (spacing track) S1, S2 form desired depth (with device D finish the suitable degree of depth of thickness) slot segmentation; then; boundary belt is pasted on surface in wafer W; the boundary belt side draught is drawn the chuck table that remains in grinding attachment; grinding is carried out at the back side to wafer W, makes slot segmentation be exposed to the back side, thereby wafer W is divided into device D one by one.
In the extended method of the splicing tape of present embodiment, at first,, paste DAF, DAF is pasted the splicing tape T that is supported on ring-shaped frame F utilizing precut method to be divided into one by one the back side of the wafer W of device as its last operation.Then, the boundary belt that is pasted on the surface of wafer W is peeled off.Figure 9 illustrates this state.
In second execution mode of the present invention, as shown in Figure 9, will be positioned in wafer through the wafer W that DAF84 and splicing tape T are supported on ring-shaped frame F and keep on the workbench 62, clamp ring-shaped frame F by binding clasp 76 as the framework retaining member.In addition, this moment is identical with first execution mode, does not make wafer keep the adsorption section 64 of workbench 62 to produce attraction.
Then, implement adhesive tape first soft chemical industry preface, in this adhesive tape first soft chemical industry preface, keep the adsorption section 64 of workbench 62 to heat by 66 pairs of wafers of heater, thereby the part that is pasted with wafer W of splicing tape T is limbered up.Identical with first execution mode, the heating-up temperature under this situation is preferably in 40～100 ℃ scope.
Then, implement adhesive tape expansion process, in this adhesive tape expansion process, as Figure 10 institute not, make the mobile member work of urceolus 74, keep workbench 62 to drag down downwards with respect to wafer urceolus 74 and be positioned expanding location, thereby splicing tape T is expanded to radial direction.Thus because DAF84 has been applied external force, so the width of the slot segmentation of wafer W increase, and DAF84 and one by one device D rupture accordingly.
Then, implement splicing tape and keep operation, keep in the operation, keep workbench 62 to produce attraction, come the partial action attraction that is pasted with DAF84, thereby the splicing tape T under the extended mode is attracted to keep splicing tape T by making wafer at this splicing tape.
Therefore the splicing tape second soft chemical industry preface, the loose removing process of the following operation of present embodiment and first execution mode that is illustrated with reference to Fig. 7 and Fig. 8 and to take out of operation identical, omit its explanation for fear of repetition.
In addition, the extended method of the splicing tape of first execution mode also can be applied to such variation: DAF is pasted at the back side in wafer W, and DAF is sticked on the splicing tape T, in adhesive tape expansion process, in metamorphic layer 58 fractures, DAF is also along metamorphic layer 58 fractures in wafer W.
Claims (3)
1. the extended method of a splicing tape, thereby the extended method of this splicing tape is to come the splicing tape that is pasted with wafer expanded by the adhesive tape expansion device to make the extended method of wafer along the splicing tape of metamorphic layer fracture, described adhesive tape expansion device comprises: the framework retaining member, it keeps the ring-shaped frame that is equipped on the splicing tape periphery, be pasted with the wafer with metamorphic layer on the described splicing tape, described metamorphic layer is formed at wafer inside along forming the cancellate preset lines of cutting apart; Wafer keeps workbench, and it keeps the wafer that is pasted on described splicing tape; And mobile member, it makes described framework retaining member and described wafer keep workbench to relatively move between position of readiness and expanding location, and the extended method of described splicing tape is characterised in that,
The extended method of this splicing tape comprises following operation:
Wafer mounting operation, in this wafer mounting operation, the wafer mounting that will be supported on described ring-shaped frame through described splicing tape keeps on the workbench in described wafer, and utilizes described framework retaining member to keep described ring-shaped frame;
Adhesive tape first soft chemical industry preface in this adhesive tape first soft chemical industry preface, keeps workbench to heat to described wafer, thereby the part that is pasted with wafer of described splicing tape is limbered up;
Adhesive tape expansion process, in this adhesive tape expansion process, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described expanding location, make described adhesive tape expansion, thereby wafer is ruptured along described metamorphic layer;
Splicing tape keeps operation, keeps in the operation at this splicing tape, makes described wafer keep workbench to produce attraction, thereby described splicing tape is attracted to keep;
The splicing tape second soft chemical industry preface, in this splicing tape second soft chemical industry preface, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described position of readiness, and the periphery of wafer and the described splicing tape between the described ring-shaped frame heated it is limbered up;
Loose removing process after having implemented the described splicing tape second soft chemical industry preface, is implemented this loose removing process, in this loose removing process, the periphery of wafer and the described splicing tape between the described ring-shaped frame is cooled off, and removes thereby will relax; And
Take out of operation, take out of in the operation, remove described framework retaining member, and remove the attraction that described wafer keeps workbench, the wafer that is pasted on described splicing tape is taken out of from described adhesive tape expansion device with described ring-shaped frame at this.
2. the extended method of a splicing tape, the extended method of this splicing tape is to come thereby the splicing tape that is pasted with wafer through die bonding film is expanded the width increase that makes slot segmentation and made the extended method of described die bonding film along the splicing tape of described slot segmentation fracture by the adhesive tape expansion device, described adhesive tape expansion device comprises: the framework retaining member, it keeps the ring-shaped frame that is equipped on the splicing tape periphery, be pasted with wafer through described die bonding film on the described splicing tape, described wafer has and forms cancellate slot segmentation; Wafer keeps workbench, and it keeps the wafer that is pasted on described splicing tape; And mobile member, it makes described framework retaining member and described wafer keep workbench to relatively move between position of readiness and expanding location, and the extended method of described splicing tape is characterised in that,
The extended method of this splicing tape comprises following operation:
Wafer mounting operation, in this wafer mounting operation, the wafer mounting that will be supported on described ring-shaped frame through described die bonding film and described splicing tape keeps on the workbench in described wafer, and utilizes described framework retaining member to keep described ring-shaped frame;
Adhesive tape first soft chemical industry preface in this adhesive tape first soft chemical industry preface, keeps workbench to heat to described wafer, thereby the part that is pasted with wafer of described splicing tape is limbered up;
Adhesive tape expansion process, in this adhesive tape expansion process, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described expanding location, make described adhesive tape expansion, thereby make the width increase of described slot segmentation and described die bonding film is ruptured along described slot segmentation;
Splicing tape keeps operation, keeps in the operation at this splicing tape, makes described wafer keep workbench to produce attraction, thereby described splicing tape is attracted to keep;
The splicing tape second soft chemical industry preface, in this splicing tape second soft chemical industry preface, make described mobile member work, make described framework retaining member and described wafer keep workbench to relatively move and be positioned described position of readiness, and the periphery of wafer and the described splicing tape between the described ring-shaped frame heated it is limbered up;
Loose removing process after having implemented the described splicing tape second soft chemical industry preface, is implemented this loose removing process, in this loose removing process, the periphery of wafer and the described splicing tape between the described ring-shaped frame is cooled off, and removes thereby will relax; And
Take out of operation, take out of in the operation, remove described framework retaining member, and remove the attraction that described wafer keeps workbench, the wafer that is pasted on described splicing tape is taken out of from described adhesive tape expansion device with described ring-shaped frame at this.
3. the extended method of splicing tape according to claim 1 and 2 is characterized in that,
Described splicing tape is made of polyvinyl chloride or polyolefin,
Heating-up temperature in the described adhesive tape first soft chemical industry preface is 40 ℃～100 ℃, and the heating-up temperature in the described splicing tape second soft chemical industry preface is 80 ℃～300 ℃.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009114891A JP5313036B2 (en) | 2009-05-11 | 2009-05-11 | How to expand adhesive tape |
| JP2009-114891 | 2009-05-11 |
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| CN2010101705980A Pending CN101887841A (en) | 2009-05-11 | 2010-04-29 | Adhesive tape expansion method |
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| CN102746802A (en) * | 2011-04-20 | 2012-10-24 | 株式会社迪思科 | Method for machining adhesion belt and wafer |
| CN102773611A (en) * | 2011-05-12 | 2012-11-14 | 株式会社迪思科 | Wafer dividing method |
| CN103165404A (en) * | 2011-12-14 | 2013-06-19 | 株式会社村田制作所 | Expanding device and method for manufacturing components |
| CN103247573A (en) * | 2012-02-09 | 2013-08-14 | 株式会社迪思科 | Method for dividing workpiece |
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| CN105097479A (en) * | 2014-05-08 | 2015-11-25 | 株式会社迪思科 | Chip interval maintaining device and chip interval maintaining method |
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| CN105914142B (en) * | 2015-02-20 | 2020-10-09 | 株式会社迪思科 | Wafer dividing device and dividing method |
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| CN107039261A (en) * | 2015-09-18 | 2017-08-11 | 株式会社迪思科 | The dividing method of segmenting device and chip |
| CN107039261B (en) * | 2015-09-18 | 2021-08-17 | 株式会社迪思科 | Dividing device and wafer dividing method |
| CN107403755A (en) * | 2016-05-19 | 2017-11-28 | 胡川 | Chip manufacture method |
| CN107808847A (en) * | 2016-09-09 | 2018-03-16 | 株式会社迪思科 | Chip distance maintaining method |
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| CN109909623A (en) * | 2017-12-12 | 2019-06-21 | 中芯国际集成电路制造(北京)有限公司 | Cutting method for wafer |
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| US11881425B2 (en) | 2019-11-05 | 2024-01-23 | Nxp B.V. | Technique for handling diced wafers of integrated circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201041028A (en) | 2010-11-16 |
| TWI469206B (en) | 2015-01-11 |
| JP2010263164A (en) | 2010-11-18 |
| JP5313036B2 (en) | 2013-10-09 |
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