CN105842601A - Semiconductor device measurement method - Google Patents
Semiconductor device measurement method Download PDFInfo
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- CN105842601A CN105842601A CN201610076200.4A CN201610076200A CN105842601A CN 105842601 A CN105842601 A CN 105842601A CN 201610076200 A CN201610076200 A CN 201610076200A CN 105842601 A CN105842601 A CN 105842601A
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- thin slice
- semiconductor device
- slice
- adhering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Dicing (AREA)
Abstract
The invention discloses a semiconductor device measurement method capable of effectively measuring electric characteristics of a plurality of semiconductor devices in high-temperature measurement environment. A slice (11) adhered to an annular frame (12) is heated using slice preheating equipment (3) and then is cooled. Measuring equipment (6) measures electric characteristics of a plurality of semiconductor devices (14) adhered to the slice (11) in high-temperature measurement environment then. The slice (11) is heated and cooled in advace, so the slice (11) swells without relaxation. Therefore, even the slice (11) is placed in the high-temperature measurement environment hereafter, swelling of the slice (11) due to heating can also be prevented; and positions and angles of the semiconductor devices (14) adhered to the slice (11) remain unchanged.
Description
Technical field
The present invention relates to a kind of semiconductor device measuring method, stick to thin more particularly, to one measurement
The semiconductor device measuring method of the electrical characteristic of the semiconductor device on sheet.
Background technology
By using size to measure semiconductor device more than the annular frame of semiconductor wafer.Have more than ring
The circular sheet adhesive of the inner circumferential edge of shape framework is fixed to annular frame, and semiconductor wafer adheres to
In sheet adhesive.Stick to the semiconductor wafer in sheet adhesive be cut equipment and be divided into multiple semiconductor device.
The contact element of semiconductor testing apparatus is electrically connected to the electrode of multiple separate semiconductor device, and immediately
Measure the electrical characteristic of multiple semiconductor device.Japanese Patent Laid-Open 2007-178132 discloses this partly lead
Body device measuring method.
Use environment according to semiconductor device, it would be desirable to high temperature measurement ring at temperatures greater than room temperature
In border, (such as, 125 DEG C) measure the electrical characteristic of semiconductor device.In such a case it is necessary to by inciting somebody to action
It is stained with the thin slice of multiple semiconductor device to be placed on the placed side of hot plate and heating sheet generates for multiple
The high temperature measurement environment of semiconductor device.But, if performing said process, then thin slice is swollen due to heat
Swollen and lax, and the position that is pasted onto on thin slice of multiple semiconductor device and attach angle and also can change.
Therefore, the contact element of semiconductor testing apparatus cannot again with the electrode contact of semiconductor device, so the most not
The electrical characteristic of the plurality of semiconductor device may be measured the most simultaneously.This will cause cannot be effectively at high temperature side
Amount environment is measured the electrical characteristic of multiple semiconductor device.
Summary of the invention
It is an object of the invention to provide a kind of semiconductor device measuring method, this semiconductor device measuring method energy
Enough electrical characteristics effectively measuring multiple semiconductor devices under high temperature measurement environment.
For achieving the above object, the semiconductor device measuring method of the present invention comprises the following steps: (should by thin slice
Shrink when being cooled after thin slice is heated) the thin slice adhering step that adheres on annular frame；Will be with matrix
Form is formed with the aggregation adhering step that the aggregation of multiple semiconductor device adheres on the surface of thin slice；
Stick to the aggregation on the described surface of thin slice by cutting and separate the cutting step of multiple semiconductor device；
The placement step that the thin slice being stained with multiple separate semiconductor device is placed on the placed side of firing equipment
Suddenly；The heating steps of the multiple separate semiconductor device on thin slice is sticked to by firing equipment heating；Multiple
The measurement step of the electrical characteristic of the plurality of separate semiconductor device measured by separate semiconductor device when being heated
Suddenly；And after the heating step with the preheating step placing heating before step then cooling wafer.
Sticking to the thin slice on framework be heated and cool down after the heating, therefore thin slice expands without having
Lax.Even if by placing the sheet on the placed side of firing equipment in this condition and being set by heating
When standby heating sheet produces high temperature measurement environment, the expansion that thin slice occurs because of heating still can be suppressed
's.Therefore, the position and the angle that stick to the multiple semiconductor devices on thin slice will keep constant.This makes
Can under high temperature measurement environment the electrical characteristic of effectively measuring multiple semiconductor devices.
Accompanying drawing explanation
Fig. 1 be show according to a first embodiment of the present invention be used in partly leading in semiconductor device measuring method
Body device measures the integrally-built block diagram of system；
Fig. 2 is the view for illustrating to use the thin slice adhering step of automatic thin slice adhering device；
Fig. 3 is the view for illustrating to use the thin slice preheating step of thin slice pre-heating device；
Fig. 4 A is the axonometric chart of the state showing that quasiconductor band is adhered on thin slice；
Fig. 4 B be show S portion in Fig. 4 A be exaggerated after axonometric chart；
Fig. 5 A is the view for illustrating to use the cutting step of cutting equipment；
Fig. 5 B be show Fig. 5 A major part be exaggerated after view；
Fig. 6 is the sectional view showing the state using cutting equipment cutting semiconductor band；
Fig. 7 is the view of the structure showing measurement equipment；
Fig. 8 is the axonometric chart of the hot plate showing measurement equipment；
Fig. 9 is the axonometric chart of the state showing that thin slice is placed on the hot plate of measurement equipment；
Figure 10 is the sectional view of the structure of the hot plate showing measurement equipment；
Figure 11 is for the axonometric chart using UV curing apparatus to perform UV curing schedule is described；
Figure 12 is the sectional view of the mode showing that UV curing apparatus uses ultraviolet irradiation thin slice；
Figure 13 is the view of the structure showing sorting device；
Figure 14 is the flow chart of the process of the semiconductor device measuring method showing first embodiment of the invention；
Figure 15 be show quasiconductor band be cut equipment cutting before and cutting after the sectional view of state；
Figure 16 is to show the sectional view that semiconductor device is pushed pin state upwardly；
Figure 17 be show according to a second embodiment of the present invention be used in partly leading in semiconductor device measuring method
Body device measures the integrally-built block diagram of system；
Figure 18 is the flow process of the process showing semiconductor device measuring method according to a second embodiment of the present invention
Figure；
Figure 19 be show according to a third embodiment of the present invention be used in partly leading in semiconductor device measuring method
The integrally-built block diagram of bulk measurement system；
Figure 20 is the flow process of the process showing semiconductor device measuring method according to a third embodiment of the present invention
Figure；
Figure 21 is to show the hot plate of measurement equipment according to a fourth embodiment of the present invention and be placed on this hot plate
On the axonometric chart of thin slice；With
Figure 22 is the sectional view of the structure showing the hot plate measuring equipment according to a fourth embodiment of the present invention.
Detailed description of the invention
<first embodiment>
Below with reference to accompanying drawing, the first embodiment of the present invention is illustrated.
<overall structure of semiconductor device measurement system>
As it is shown in figure 1, system 1 measured by semiconductor device includes that the preheating of automatic thin slice adhering device 2, thin slice sets
Standby 3, automated semiconductor band adhering device 4, cutting equipment 5, measure equipment 6, UV curing apparatus 7 with
And sorting device 8.
<automatic thin slice adhering device>
Automatically thin slice adhering device 2 is the equipment for automatically adhering on annular frame 12 by thin slice 11.
As in figure 2 it is shown, the framework that annular frame 12 is the approximation plate-shaped in plan view with toroidal, and
And there is circular open 12a.Automatically thin slice adhering device 2 by have in plan view round-shaped thin slice from
The thin slice body 10 being wound into scroll cuts away, and by the edge of the adhesive material 11b (Fig. 6) of thin slice 11
It is adhered on annular frame 12.
It should be noted that annular frame 12 need not be always annular, it is also possible to be straight-flanked ring or similar
Shape.In this case, thin slice 11 is cut to the shape corresponding with the shape of annular frame 12, example
Such as rectangular shape.Equally, automatic thin slice adhering device 2 is also without being used all the time, and can perform
Behind simple location, thin slice 11 is manually adhered on annular frame 12.
<thin slice>
Thin slice 11 has the diameter of the opening 12a slightly larger than annular frame 12.As shown in Figure 6, thin slice 11
For by UV-curable adhesive material 11b is stacked on PET (polyethylene terephthalate) substrate 11a
UV (ultraviolet) thin slice of upper acquisition.When thin slice 11 from outside by ultraviolet irradiation time, adhesive material
The bonding force of 11b reduces.
Thin slice 11 has the characteristic of expansion/contraction, in the temperature being heated to above room temperature (the first temperature)
(the second temperature), such as, when 100 DEG C, thin slice 11 expands, and is cooled to the feelings of room temperature later
Shrink more compared with before heating under condition.This expansion/contraction characteristics of thin slice 11 can also be defined to,
Shrinkage factor based on cooling is more than expansion factor based on heating.It should be noted that " room temperature " be by
The temperature that air regulation controls, about 20 DEG C to 25 DEG C.
Above-mentioned expansion/contraction characteristics is the characteristic found in crystalline plastics.For example, it is also possible to use include by
The thin slice 11 of the substrate 11a that PBT (polybutylene terephthalate) is formed is as crystalline plastics.
<thin slice pre-heating device>
As it is shown on figure 3, thin slice pre-heating device 3 includes hot environment stove 17, hot environment stove 17 can be with height
Temperature (the second temperature) (such as, 100 DEG C or higher) in room temperature produces hot environment.In hot environment
In this hot environment that stove 17 produces, the thin slice 11 sticked on annular frame 12 is put with annular frame 12
Put together and be preheated.Hereinafter this process is referred to as " preheating ".
<automated semiconductor band adhering device>
Automated semiconductor band adhering device 4 be for by quasiconductor band 13 (described later on) automatic bonding to by
Equipment on the adhesive material 11b of the thin slice 11 of thin slice pre-heating device 3 preheating.It should be noted that automatically
Quasiconductor band adhering device 4 need not be used all the time, and can also after performing simple location manually
Quasiconductor band 13 is adhered on thin slice 11.
<quasiconductor band>
As illustrated in figures 4 a and 4b, quasiconductor band 13 is aggregation, and plurality of semiconductor device 14 is by cloth
It is set to matrix integrated.The opening 12a being smaller in size than annular frame 12 of quasiconductor band 13.Form quasiconductor
Each semiconductor device 14 with 13 has a following structure, wherein semiconductor chip 14c and be electrically connected to half
The lead frame 14r of conductor chip 14c uses moulding resin 14m integral sealing.Each semiconductor device 14
Lead frame 14r is physically electrically connected to the lead frame 14r of adjacent semiconductor devices 14, and uses molding tree
Fat 14m seals.
<cutting equipment>
As shown in Fig. 5 A, 5B and 6, cutting equipment 5 is the thin slice 11 keeping with being stained with quasiconductor band 13
Integrated annular frame 12 also passes through cutting blade 20 cutting semiconductor band 13 to be divided into by quasiconductor band 13
The equipment of single semiconductor device 14.
<measurement equipment>
Measurement equipment 6 is the equipment being used for simultaneously measuring multiple semiconductor device 14.In the present embodiment, quilt
Stick to the multiple separate semiconductor device 14 on thin slice 11 for measuring object.Measurement equipment 6 can root
At higher than the temperature (the 3rd temperature) of room temperature, high temperature side is produced according to the practical service environment of semiconductor device 14
Amount environment, such as 125 DEG C, and perform measurement under this high temperature measurement environment.In the case, this high temperature
The lower limit measuring environment is room temperature, and the upper limit of this high temperature measurement environment is 125 DEG C.
As it is shown in fig. 7, measurement equipment 6 includes as the firing equipment for heating multiple semiconductor device 14
Hot plate 50, include the catalyst 25 of multiple probe 26 and be connected to multiple probe 26 and measure quasiconductor
The tester 27 of the electrical characteristic of device 14.
As seen in figs. 8-10, hot plate 50 includes heater 51 and the clamping platform 24 being fixed on heater 51.
Clamping platform 24 is made of metal, and has approximate rectangular shape in plan view.Have near in the planes
It is formed on the upper surface of clamping platform 24 like the recess 24a (Figure 10) of rectangular shape.Have in plan view
The plate-like clamping component 53 having near rectangular shape is assembled in the recess 24a of clamping platform 24.Clamping structure
Part 53 is made up of the porous material (ceramic) comprising substantial amounts of air gap and hole.Clamping component 53 has can
The placed side 53a of the smooth planar of clamping thin slice 11.
Each two vacuum passage 55 in side view with L shape and two vacuum passage 56 shapes
Become in the inside of clamping platform 24.One end of each in vacuum passage 55 and 56 is towards clamping platform 24
Recess 24a opening, the other end of vacuum passage 55 and vacuum passage 56 is towards the side 24b of clamping platform 24
With 24c opening.Two pipe connecting elements 52 and two pipe connecting elements 54 are connected to the side of clamping platform 24
24b and 24c.Through hole 52a and 54a is formed in pipe connecting elements 52 and 54.Pipe connecting elements 52 He
Through hole 52a and 54a of 54 is connected to the vacuum passage 55 and 56 of clamping platform 24.Vacuum pump (does not shows in figure
Go out) it is connected to pipe connecting elements 52 and 55.
Hot plate 50 is installed in X-Y stage (not shown), and described X-Y stage can be in arrow A-B side
To (width), be perpendicular to arrow A-B direction arrow C-D direction (depth direction) and arrow
E-F direction (short transverse) is upper mobile.
Catalyst 25 is relative with the clamping component 53 of clamping platform 24.Catalyst 25 includes having less parallel
Main body 25a of hexahedral shape and be fixed to multiple probes 26 of main body 25a.Probe 26 is contact element,
To be electrically connected to the lead frame 14r of semiconductor device 14.Probe 26 extends through main body 25a.Each probe
Distal portion 26a of 26 is downwardly projected in the direction of arrow F from the lower end of main body 25a.Each probe 26 near
End 26b projects upwards in the direction of arrow E from the upper end of main body 25a, and is connected to tester 27.
Multiple probes 26 are arranged to relative with multiple lead frame 14r of a semiconductor device 14.
Tester 27 includes: measuring unit 27a, and described measuring unit is for when distal portion 26a of probe 26
It is electrically connected to measure during the lead frame 14r of semiconductor device 14 conducted state of semiconductor device 14；Diagnosis
Unit 27b, described diagnosis unit is for the measurement result diagnosis semiconductor device obtained according to measuring unit 27a
The electrical characteristic of 14；With delivery unit 27c, described delivery unit is for examining of being obtained by diagnosis unit 27b
Disconnected result is sent to sorting device 8.
<UV curing apparatus>
UV curing apparatus 7 is the side-irradiation thin slice 11 for using the ultraviolet substrate 11a from thin slice 11
Equipment.It is to say, thin slice 11 is by the ultraviolet from the surface not having attaching semiconductor device 14
Irradiate.As shown in FIG. 11 and 12, UV curing apparatus 7 includes multiple black light lamp 28, and the plurality of black light lamp is put down
On the side adhered on annular frame 12 of the substrate 11a being arranged in thin slice 11 capablely.
<sorting device>
Sorting device 8 is that multiple semiconductor devices 14 are made by a kind of tester 27 according to measurement equipment 6
Electrical characteristic diagnostic result each in multiple semiconductor devices 14 is categorized as qualified products or defective
Product, the semiconductor device 14 being classified as substandard product is removed from thin slice 11 and with sorter will
The equipment that the semiconductor device 14 removed picks.
As described in Figure 13, sorting device 8 includes: receiving unit 31, described reception unit is used for receiving measurement
The diagnostic result of the semiconductor device 14 that the tester 27 of equipment 6 obtains；Taxon 32, described classification
Unit is for being categorized as qualified products and substandard product according to described diagnostic result by semiconductor device 14；With
On push pin 30, described on push pin and be categorized as defective for being only classified unit 32 from the lower section of thin slice 11
The semiconductor device 14 of product is pushed up.
<semiconductor device is measured the measurement of system and is operated>
14 illustrate that the semiconductor device measurement system 1 with said structure measures quasiconductor below with reference to accompanying drawings
The operation that the electrical characteristic of device 14 is used.
[automatic thin slice adhering step S1]
As in figure 2 it is shown, the circle of the opening 12a that thin slice adhering device 2 will be greater than annular frame 12 is thin automatically
Sheet 11 shear offs from chip body 10, and the outer circumferential edges of thin slice 11 is adhered to annular frame
On 12.The annular frame 12 being stained with thin slice 11 is transferred to thin slice preheating from automatic thin slice adhering device 2
Equipment 3.
[thin slice preheating step S2]
The thin slice 11 adhered on annular frame 12 is contained in hot environment stove 17 by thin slice pre-heating device 3,
And 11 two minutes (preheating time) of heating sheet or longer time in the hot environment of 100 DEG C.So
After, thin slice 11 is unloaded from hot environment stove 17 by thin slice pre-heating device 3, and under room temperature environment certainly
So cooling wafer 11.
In the process, the thin slice 11 hot environment in hot environment stove 17 expands, thereafter in room temperature
Environment shrinks.Because thin slice 11 has the shrinkage factor characteristic more than expansion factor so that stick to annular
Thin slice 11 on framework 12 has tension force, and this tension force eliminates thin slice 11 and is adhered to annular frame 12
Lax and the wrinkling problem caused time upper.This is the preheating by thin slice pre-heating device 3 and cools down the thin of acquisition
The state of sheet 11.
Wrinkling thin slice 11 is not had again, it is only necessary to by hot environment in order to obtain as above the most relaxing
The lower limit temperature of stove 17 is set to 90 DEG C, as the glass transition temperature Tg of the PET forming thin slice 11, and
And the ceiling temperature of hot environment stove 17 is set as 260 DEG C, as the fusing point Tm of PET, (this fusing point is not
The temperature of melt material, but polymerization fusing point).It is set to the preheating time of thin slice 11 two minutes or longer,
Even if this is because set the hot environment of 100 DEG C in hot environment stove 17, but if preheating time little
Preheating/the cooling effect of thin slice 11 can not be obtained in two minutes.
[automated semiconductor band adhesion step S3]
Then, quasiconductor band 13 is adhered to be coated with the glue of thin slice 11 by automated semiconductor band adhering device 4
On the surface of viscous material 11b, wherein lax the and fold on thin slice 11 can be by preheating as described above
Eliminate with cooling.Hereafter, the thin slice 11 being stained with quasiconductor band 13 is transferred to together with annular frame 12
Cutting equipment 5.
[cutting step S4]
Cutting equipment 5 keeps the thin slice transferred from automated semiconductor band adhering device 4 by annular frame 12
11, and stick to the quasiconductor band 13 on thin slice 11 by cutting blade 20 cutting, thus by quasiconductor
It is divided into single semiconductor device 14 with 13.In this step, as shown in figure 15, cutting blade 20 cuts
It is stained with the adhesive material 11b of the thin slice 11 of quasiconductor band 13, but does not cut the substrate 11a of thin slice 11.
Therefore, cutting equipment 5 performs hemisect.
As it has been described above, the lead frame 14r of adjacent semiconductor devices 14 physically electrically connects in quasiconductor band 13.
When the single semiconductor device 14 of quasiconductor band 13 is separated, being somebody's turn to do between adjacent semiconductor devices 14
Electrical connection disappears.Therefore, measurement equipment 6 can measure the multiple quasiconductors dress forming quasiconductor band 13 respectively
Put the electrical characteristic of 14.
[placing step S5]
The cut separate multiple semiconductor devices 14 of equipment 5 are the most all glued material 11b and stick to thin
On sheet 11 (Fig. 7).Therefore measurement equipment 6 will be stained with the thin slice of multiple separate semiconductor device 14
On the placed side 53a of 11 clamping components 53 being placed on hot plate 50.Then, by by vacuum pump via heat
The pipe jointing part 52 of plate 50 and 54 and the vacuum passage 55 and 56 of clamping platform 24 aspirate thin slice 11, make
Obtain thin slice 11 to be clamped on the placed side 53a of clamping component 53.In this case, at least thin slice 11
The part being stained with multiple semiconductor device 14 must be clamped on the 53a of placed side.
[heating steps S6]
Then, clamping platform 24 is carried out by measurement equipment 6 by being positioned at the heater 51 of the lower section of clamping platform 24
Heating, thus by the placed side 53a of clamping component 53 on clamping stick on thin slice 11 multiple separate
Semiconductor device 14 be arranged in the high temperature measurement environment of 125 DEG C.
In added the temperature retention time (soak time) being thermally generated before high temperature measurement environment by heater 51,
Position adjustments is performed so that lead frame 14r and the catalyst 25 of in multiple semiconductor device 14
Probe 26 relative.More specifically, photographing unit catches the figure of the lead frame 14r of semiconductor device 14 respectively
As and the image of probe 26 of catalyst 25, and X-Y stage moves hot plate 50 according to the image caught,
So that lead frame 14r is relative with probe 26.
The thin slice 11 being placed on the placed side 53a of clamping component 53 is made to occur nothing to relax by preheating
Expand.Therefore, even if in high temperature measurement environment, thin slice 11 expands the most hardly, and has not both had pine
Relax and also there is no fold.Accordingly, with respect to the situation before being heated by heater 51, stick to thin slice 11
On multiple semiconductor devices 14 all keep constant relative to the position of probe 26 and angle.Therefore, even if
Through the heating of heater 51, multiple lead frame 14r of semiconductor device 14 and multiple spies of catalyst 25
Position relationship between pin 26 also will not change, but is maintained.This is possible to prevent due to thin slice 11
Lax and fold and the thin slice 11 that brings are difficult to the trouble being clamped on the placed side 53a of clamping component 53.
[measuring process S7]
In the high temperature measurement environment heating multiple semiconductor devices 14, main body 25a of catalyst 25 is along arrow
The direction of head F moves down so that distal portion 26a of probe 26 and multiple lead-in wires of semiconductor device 14
Frame 14r contacts.Measuring unit 27a of tester 27 measures semiconductor device 14 by multiple probes 26
The conducted state of multiple lead frame 14r.According to measurement result, the diagnosis unit 27b diagnosis of tester 27
The electrical characteristic of each semiconductor device 14.This diagnostic result (is closed by the delivery unit 27c of tester 27
Lattice product or substandard product) it is sent to sorting device 8.
When tester 27 in high temperature measurement environment completely whole separate multiple to stick on thin slice 11
When the electrical characteristic of semiconductor device 14 diagnoses, the thin slice 11 being stained with multiple semiconductor device 14 is forwarded
To UV curing apparatus 7.
[UV curing schedule S8]
Multiple black light lamps 28 of UV curing apparatus 7 send ultraviolet light from the side of the substrate 11a of thin slice 11.
Therefore, the cohesive force of the adhesive material 11b of thin slice 11 declines, and this promote multiple semiconductor device 14 from
Remove on thin slice 11.In this case, thin slice 11 is transferred to sorting device 8.
[classifying step S9]
The unit 31 that receives of sorting device 8 receives each partly the leading of tester 27 transmission from measurement equipment 6
The diagnostic result of body device 14.The taxon 32 of sorting device 8 according to diagnostic result by multiple quasiconductors
Each in device 14 is categorized as on qualified products or substandard product, and control pushing pin 30 with upwards
Promote the semiconductor device 14 being classified as qualified products.As shown in figure 16, the half of qualified products it is classified as
Conductor device 14 is pushed distal portion 30a of pin 30 from the lower section of thin slice 11 upwardly.Therefore, partly lead
Body device 14 is removed on the adhesive material 11b of thin slice 11, and is chosen device (not shown)
Pick.
It should be noted that the semiconductor device 14 being classified as substandard product is not pushed pin 30
Distal portion 30a is pushed up from the lower section of thin slice 11, but remains adhered on thin plate 11 and be eventually discarded.
[effect]
The lax of the thin slice 11 sticked on annular frame 12 and fold is eliminated by preheating and cooling.At this
Under state, on the placed side 53a of the hot plate 50 that thin slice 11 is placed on measurement equipment 6.Therefore, even if
When being heated to 125 DEG C by heater 51, thin slice 11 expands the most hardly, and the most lax and fold.
Therefore, between multiple probes 26 and multiple lead frame 14r of semiconductor device 14 of regulation catalyst 25
Position relationship after, this position relationship between them will not change because of the heating of heater 51.
In the present embodiment, hot plate 50 includes clamping component 53.As it has been described above, because entered through preheating and
Cooling thin slice 11 both will not relax also will not fold, so thin slice 11 is reliably clamped by clamping component 53
On the 53a of placed side.Even if when heating through heater 51, thin slice 11 also will not occur lax or pleat
Wrinkle, and be clamped on the 53a of placed side by clamping component 53.Heater 51 is used to heat front and heating
After, by being clamped on the 53a of placed side by thin slice 11, more stably keep multiple probes of catalyst 25
Position relationship between 26 and multiple lead frame 14r of semiconductor device 14.
Therefore, distal portion 26a of multiple probes 26 of catalyst 25 and multiple lead-in wires of semiconductor device 14
Frame 14r stably contacts, and measures the electrical characteristic of semiconductor device 14.Therefore, adhesion is measured subsequently
The electrical characteristic of the multiple semiconductor devices 14 on thin slice 11.Therefore, in the present embodiment, though
Can also the electrical characteristic of the most effectively measuring multiple semiconductor devices 14 in high temperature measurement environment.
It should be noted that conventional measurement devices includes bigger preheating structure, in order at high temperature measure half
Conductor device.But, to measure in equipment 6, preheating can be by the clamping platform 24 times being arranged on hot plate 50
The heater 51 of side performs.Owing to this avoids in conventional measurement devices the demand to bigger preheating structure, because of
This can simplify the structure of equipment and reduce size and the weight of equipment.
<the second embodiment>
Next it will be described for the second embodiment of the present invention.As shown in figure 17, system 101 measured by semiconductor device
Set including automatic thin slice adhering device 2, automated semiconductor band adhering device 4, cutting equipment 5, thin slice preheating
For 3, measurement equipment 6, UV curing apparatus 7 and sorting device 8.The group of system 101 measured by semiconductor device
Become element identical with the element that system 1 measured by the semiconductor device according to first embodiment, but the former
Layout different from the layout of the latter.It is to say, the process sequence of steps of the present embodiment and first embodiment
Process sequence of steps different.
More specifically, in system 101 measured by semiconductor device, thin slice pre-heating device 3 is disposed in cutting
After equipment 5, before measurement equipment 6.It is to say, as shown in figure 18, thin slice pre-heating device 3 hold
The thin slice preheating step S2 of row after the cutting step S4 that cutting equipment 5 performs, measurement equipment 6 performs
Placement step S5 before perform.
If the time is selected in measurement equipment 6 and regulates the probe 26 of multiple semiconductor device 14 and catalyst 25
Before position, even if after quasiconductor band 13 is divided into multiple semiconductor device 14 by cutting equipment 5, thin
Sheet pre-heating device 3 still can be by being stained with the thin slice 11 of multiple separate semiconductor device 14
Power eliminates the lax of thin slice 11 and fold.Therefore, as in the first embodiment, even if at high temperature side
Measuring equipment 6 in amount environment can also the most effectively measuring electrical characteristic to multiple semiconductor devices 14.
<the 3rd embodiment>
Next it will be described for the third embodiment of the present invention.As shown in figure 19, system 102 measured by semiconductor device
Set including automatic thin slice adhering device 2, automated semiconductor band adhering device 4, thin slice pre-heating device 3, cutting
For 5, measurement equipment 6, UV curing apparatus 7 and sorting device 8.System 102 measured by semiconductor device
The element that element measures system 1 with the semiconductor device according to first embodiment is identical, but before
The layout of person is different from the layout of the latter.It is to say, the order and first of the process step in the present embodiment
The order of the process step in embodiment is different.
More specifically, in system 102 measured by semiconductor device, thin slice pre-heating device 3 is disposed in automatically
After quasiconductor band adhering device 4, before cutting equipment 5.It is to say, as shown in figure 20, thin slice glues
The automated semiconductor that the thin slice preheating step S2 that applying equipment 3 performs performs at automated semiconductor band adhering device 4
With after adhering step S3, cutting equipment 5 perform cutting step S4 before perform.
If the time is selected in measurement equipment 6 and regulates the probe 26 of multiple semiconductor device 14 and catalyst 25
Before position, even if after quasiconductor band 13 adheres on thin slice 11, cutting equipment 5 is by quasiconductor band
Before 13 are divided into multiple semiconductor device 14, thin slice pre-heating device 3 still partly can be led by being stained with
Thin slice 11 tension force of body band 13 eliminates the lax of thin slice 11 and fold.Therefore, as in first embodiment
Described in, even if in high temperature measurement environment, measurement equipment 6 still can be measured multiple the most immediately
The electrical characteristic of semiconductor device 14.
<the 4th embodiment>
Next it will be described for the fourth embodiment of the present invention.In the fourth embodiment, the hot plate shown in Figure 21
70 replace the hot plate 50 measuring equipment 6 according to each in the first to the 3rd embodiment.Therefore, except
Beyond hot plate 70, automatic thin slice adhering device 2, thin slice pre-heating device 3, automated semiconductor band adhering device 4,
Cutting equipment 5, measure equipment 6, UV curing apparatus 7 and sorting device 8 all with according to first, second and
It is identical with the element of 102 that system 1,101 measured by the semiconductor device of the 3rd embodiment.
As shown in figs. 21 and 22, similar with hot plate 50, hot plate 70 includes heater 51.In plan view
The clamping platform 71 with rectangular shape is fixed on heater 51.Shape in the placed side 71a of clamping platform 71
Become to have the multiple grooves 72 being connected with each other.Clamping platform 71 is made of aluminum.Therefore, when heater 51 heating folder
During tight platform 71, the temperature of clamping platform 71 keeps constant.It should be noted that clamping platform 71 is not necessarily to by aluminum
Make, it is also possible to the metal material being had high-termal conductivity by other is formed.
Each two vacuum passage 75 being respectively provided with L-shape in side view it is formed with in clamping platform 71
With two vacuum passages 76.One end of each in vacuum passage 75 and 76 and in multiple grooves 72
Individual it is connected, and the other end of vacuum passage 75 and 76 is to the side 71b of clamping platform 71 and 71c opening.
Two pipe connecting elements 73 and two pipe connecting elements 74 are fixed to side 71b and 71c of clamping platform 71.
Pipe connecting elements 73 and 74 is formed with through hole 73a and 74a.The through hole 73a of pipe connecting elements 73 and 74
With the vacuum passage 75 and 76 that 74a is connected to clamping platform 71.Vacuum pump (not shown) is connected to pipe
Connecting elements 73 and 74.
The thin slice 11 being placed on the placed side 71a of clamping platform 71 by vacuum pump by being exposed to placed side 71a
Multiple grooves 72 aspirate and be clamped on the 71a of placed side.
The catalyst 25 of the electric state for detecting multiple semiconductor device 14 as shown in Figure 7 is set
Above clamping platform 71, and tester 27 is connected to catalyst 25.
Similar to first embodiment, even if when being heated to 125 DEG C by heater 51, pass through preheating and
Thin slice 11 after cooling expands hardly, also will not relax or wrinkle.Therefore, even if at high temperature side
In amount environment, thin slice 11 also can be clamped on the placed side 71a of clamping platform 71.This mode avoids
When the probe 26 of catalyst 25 contacts with the lead frame 14r of the semiconductor device 14 sticked on thin slice 11
Time the impact that produces change semiconductor device 14 and the position of thin slice 11 and cause sticking on thin slice 11 another
The inconvenience that one semiconductor device 14 cannot be measured to again.
<other embodiments>
In each in first to fourth embodiment, have been described that wherein by cutting semiconductor band 13
The example that semiconductor device 14 is pyrometric object obtained.But, obtained by cutting semiconductor chip
The semiconductor chip obtained can also be the pyrometric object as semiconductor device.
In each in first to fourth embodiment, have been described that and thin slice 11 is adhered to annular frame
The example on thin slice 11 is adhered on 12 and then by quasiconductor band 13.However, it is also possible to by quasiconductor band
13 adhere to, on thin slice 11, be adhered on annular frame 12 by thin slice 11 the most again.In this case,
Automated semiconductor band adhering step S3 is first carried out, then performs automatic thin slice adhering step S1.
In each in the first to the 4th embodiment, have been described that by being clamped on clamping component 53
Placed side 53a or clamping platform 71 placed side 71a on thin slice 11 measure half sticked on thin slice 11
The example of the electrical characteristic of conductor device 14.But, use the thin slice 11 of preheating can avoid contact with device 25
Multiple probes 26 and multiple lead frame 14r of semiconductor device 14 between position relationship due to heater
The heating of 51 and change, be clamped on 53a or 71a of placed side without by thin slice 11.
In each in the first to the 4th embodiment, have been described that and produced by hot plate 50 or 70
The high temperature measurement environment of a height of 125 DEG C and measure the electric of semiconductor device 14 in this high temperature measurement environment
The example of characteristic.But, the temperature of this high temperature measurement environment is not limited to 125 DEG C, it is also possible to be 85 DEG C to 150
℃。
In each in the first to the 4th embodiment, preheating is by the temperature (second higher than room temperature
Temperature) under hot environment in, such as 100 DEG C or higher, (example preheating time that heating sheet 11 is predetermined
As, 2 minutes) or longer perform.In this step, can incite somebody to action by arranging sufficiently long preheating time
Residual water on semiconductor device 14 is dried.Traditional thin slice cannot toast in this hot environment.Therefore,
Can not be by multiple semiconductor devices being sticked to baking on thin slice.On the contrary, can be to being made up of PET
Thin slice 11 heats for a long time.Therefore, it can by multiple semiconductor devices 14 are sticked to PET
On thin slice 11, it is toasted effectively.It addition, because utilize preheating that semiconductor device 14 is dried
Roasting, so need not individually perform any baking procedure.It should be noted that when performing baking, preheating
Time was arranged to the time residual water of semiconductor device 14 removed during this period, such as, 8 hours.
In each in the first to the 4th embodiment, have been described that use black light in UV curing apparatus 7
The example of lamp 28.It is also possible, however, to use metal halide lamp, mercury lamp or similar lamp replace black light lamp 28.
In each in the first to the 4th embodiment, have been described that and perform UV by UV curing apparatus 7
The example that after solidification, semiconductor device 14 is classified by sorting device 8.However, it is also possible at sorting device
8 pairs of semiconductor devices 14 perform UV by UV curing apparatus 7 after classifying and solidify, and then unload lower half and lead
Body device 14.
Claims (5)
1. a semiconductor device measuring method, comprises the following steps:
Thin slice (11) is adhered to the thin slice adhering step (S1) on annular frame (12), wherein said
Shrink when cooling after thin slice is heated；
Aggregation (13) is adhered to the aggregation adhering step (S3) on the surface of described thin slice (11),
Wherein in described aggregation (13), multiple semiconductor devices (14) form matrix；
Stick to the described aggregation (13) on the described surface of described thin slice (11) by cutting and separate institute
State the cutting step (S4) of multiple semiconductor device (14)；
The described thin slice (11) being stained with the plurality of separate semiconductor device (14) is placed on heating
Placement step (S5) on the placed side (53a) of equipment (50)；
By described heater (50) heating stick on described thin slice (11) the plurality of separate
The heating steps (S6) of semiconductor device (14)；
The plurality of separate partly lead is measured when the plurality of separate semiconductor device (14) is heated
The measuring process (S7) of the electrical characteristic of body device (14)；With
After described thin slice adhering step (S1), before described placement step (S5), heat described thin
Then sheet (11) also cools down the preheating step (S2) of described thin slice (11).
Method the most according to claim 1, wherein, described placement step (S5) includes described thin
Sheet (11) is clamped in the step on described placed side (53a).
Method the most according to claim 1, wherein, described preheating step (S2) is included in described thin
After sheet adhering step (S1), heat and cool down described thin slice before described aggregation adhering step (S3)
(11) step.
Method the most according to claim 1, wherein, described preheating step (S2) be included in described in cut
Heat and cool down the step of described thin slice (11) after cutting step (S4), before described placement step (S5)
Suddenly.
Method the most according to claim 1, wherein, described preheating step (S2) is included in described collection
After fit adhering step (S3), heat and cool down described thin slice (11) before described cutting step (S4)
Step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-019112 | 2015-02-03 | ||
| JP2015019112A JP6626254B2 (en) | 2015-02-03 | 2015-02-03 | Semiconductor device measurement method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105842601A true CN105842601A (en) | 2016-08-10 |
Family
ID=56570172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610076200.4A Pending CN105842601A (en) | 2015-02-03 | 2016-02-03 | Semiconductor device measurement method |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6626254B2 (en) |
| CN (1) | CN105842601A (en) |
| MY (1) | MY173457A (en) |
| PH (1) | PH12016000039B1 (en) |
| TW (1) | TWI588500B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI754065B (en) * | 2017-06-23 | 2022-02-01 | 日商三井化學東賽璐股份有限公司 | Parts manufacturing apparatus and parts manufacturing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2016142649A (en) | 2016-08-08 |
| TWI588500B (en) | 2017-06-21 |
| PH12016000039A1 (en) | 2018-01-29 |
| TW201631324A (en) | 2016-09-01 |
| MY173457A (en) | 2020-01-26 |
| JP6626254B2 (en) | 2019-12-25 |
| PH12016000039B1 (en) | 2018-01-29 |
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Application publication date: 20160810 |