CN107808847A - Chip distance maintaining method - Google Patents
Chip distance maintaining method Download PDFInfo
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- CN107808847A CN107808847A CN201710769571.5A CN201710769571A CN107808847A CN 107808847 A CN107808847 A CN 107808847A CN 201710769571 A CN201710769571 A CN 201710769571A CN 107808847 A CN107808847 A CN 107808847A
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- machined object
- chip
- extension piece
- ring
- sheet material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Chip distance maintaining method is provided, even in the case of the extension piece not shunk by heating is pasted with machined object, also maintaining the state that is expanded of interval of chip and preventing the mutual contact of chip caused by sheet material relaxation.The chip distance maintaining method has following steps:Chip chamber is extended to sheet material (T2) every forming step and forms interval between the chips;And sheet material collapse step, chip chamber is being implemented after forming step, the sheet material between framework (F) and machined object (W) is heated in the state of the interval between maintain chip and shunk in the sheet material that machined object outer circumferential side makes to have stretched, the chip distance maintaining method also has the step on the sheet material that multiple pyrocondensation belts (T3) are pasted onto between framework and machined object before sheet material collapse step is implemented, in sheet material collapse step, the sheet material for sheet material between framework and machined object and band together being heated and being made the region for being pasted with band shrinks.
Description
Technical field
The present invention relates to chip distance maintaining method, maintains to form the interval of multiple chips of machined object on extension piece
The state being expanded.
Background technology
On the machined object of the tabulars such as semiconductor wafer, such as its front is aligned to the segmentation preset lines stroke of clathrate
It is divided into multiple regions, various devices is respectively formed with each region that this is divided into clathrate.Also, ground in machined object
Cut and be thinned to after defined thickness, each device chip etc. is divided into along segmentation preset lines, should by these device chips
In various electronic equipments etc..
As the method split to machined object, for example, in the presence of following method:First, it is focused at laser beam
The inside of machined object and formed as segmentation starting point modification layer, by because modification layer and the segmentation preset lines of intensity decreases
Apply external force and machined object is divided into chip.As the unit for applying external force, employ by expanding unit to being pasted on
The extension piece at the back side of machined object be extended so that machined object also and meanwhile extension unit (for example, referring to patent text
Offer 1).That is, piece will be extended in the way of the opening portion for sealing ring-shaped frame to be pasted onto on machined object and piece will be extended
Peripheral part is pasted onto on ring-shaped frame, thus, machined object is in the state supported by extension piece by ring-shaped frame.Connect
, the machined object supported by ring-shaped frame is positioned on the extension drum of expanding unit, extension piece is entered along face direction
Row extension, thereby, it is possible to because modification layer and intensity decreases segmentation preset lines apply external force and machined object is divided into core
Piece.
Patent document 1:Japanese Unexamined Patent Publication 2010-147317 publications
To extension piece be extended and by machined object be suitably divided into chip and between the chips be provided with provide
Interval after, the machined object splitting to obtain is transported to from extension piece pickup chip in the state of piece pasting to extend
In pickup process.In pickup process, for example, chip is jacked up from below with pin and picked up by vacuum chuck from extension piece
The chip floated.When extend piece be expanded after remove tension force when, due to ring-shaped frame inner peripheral and machined object outer peripheral edge it
Between region extension and become loose state, so carry out machined object is transported to pickup process by ring-shaped frame when
Processing when, because extending relaxing for piece chip may be caused to be in contact with each other so that chip damage.
Therefore, as described in above-mentioned patent document 1, following method be present:Machined object is being divided into chip
Afterwards, only to extension piece in the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object between relaxation area heated and
The relaxation area is shunk, and does not make to be pasted with the portion retracts of chip and ensuring chip will not contact each other.
However, the extension piece pasted on machined object is the type that will not shrink or be not easy to shrink because of heating
In the case of extending piece, heated and can not also be shunk exactly even if the relaxation area to extending piece, as a result, by
When ring-shaped frame is handled machined object, that chip is in contact with each other and damages chip be present.
The content of the invention
Therefore, it is an object of the invention to provide a kind of chip distance maintaining method, even being pasted on machined object
In the case of having the extension piece that contraction is not shunk or be not easy because of heating, also it is able to maintain that chip is mutual and is spaced what is be expanded
State, and prevent the mutual contact of chip and damage because of caused by the relaxation for extending piece.
It is a kind of chip distance maintaining method for solving the present invention of above-mentioned problem, maintains to forming the more of machined object
The state that the interval of individual chip is extended, the machined object be pasted on extension piece in the state of by the extension piece and
Supported by ring-shaped frame, wherein, the chip distance maintaining method has the steps:Chip chamber is every forming step, to the expansion
Exhibition piece is extended and interval is formed between the chip;And extension piece collapse step, the chip chamber is being implemented every formation
After step, the outer peripheral edge of inner peripheral and machined object in the state of the interval between maintain the chip to ring-shaped frame
Between extension piece heated and the outer circumferential side in machined object shrinks the extension piece that has stretched, the chip distance maintaining
Method also has following pyrocondensation belt gluing steps:At least before the extension piece collapse step is implemented, multiple pyrocondensation belts are glued
It is attached on the extension piece between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object, it is right in the extension piece collapse step
Extension piece and the pyrocondensation belt between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object are together heated, so that viscous
The extension piece for posting the region of the pyrocondensation belt shrinks.
The chip distance maintaining method of the present invention has pyrocondensation belt gluing steps, at least implement extension piece collapse step it
Before, multiple pyrocondensation belts are pasted onto on the extension piece between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object, extended
In piece collapse step, the extension piece between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object and pyrocondensation belt are together carried out
Heating, so that pyrocondensation belt shrinks because of heating, the extension piece in the region for making to be pasted with pyrocondensation belt shrinks, even therefore not because
The extension piece for heating and shrinking, can also make its contraction, and is able to maintain that chip is mutual and is spaced the state being expanded.Cause
This, can prevent from causing chip to be in contact with each other so as to produce the damage of chip because extending relaxing for piece.
Brief description of the drawings
Fig. 1 is the stereogram of one for showing machined object and protection band.
Fig. 2 is to show the sectional view by laser processing device in the state for being internally formed modification layer of machined object.
Fig. 3 is to show to be ground machined object by grinding attachment and be thinned to the back side of machined object defined
Thickness, and machined object is divided into by grinding force the stereogram of the state of chip.
Fig. 4 is to show that machined object is pasted onto on extension piece and supported and then by protection band from machined object by ring-shaped frame
The stereogram of the state of stripping.
Fig. 5 is the expansion for showing to be pasted onto multiple pyrocondensation belts between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object
Open up the top view of one of the state on piece.
Fig. 6 show will be pasted on extension piece and by ring-shaped frame supporting segmentation after machined object be arranged on chip chamber every
The sectional view of state on expanding unit.
Fig. 7 is to show to be extended extension piece every expanding unit by chip chamber to provide so as to be formed between each chip
Interval state sectional view.
Fig. 8 is shown by by the extension piece and pyrocondensation belt between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object
The sectional view of the state of the extension piece contraction in the region for being pasted with pyrocondensation belt is heated and made together.
Label declaration
W:Machined object;Wa:The front of machined object;Wb:The back side of machined object;S:Split preset lines;D:Device;M:
Modify layer;C:Chip;T1:Protection band;T1a:The bonding plane of protection band;T2:Extend piece;T2a:Extend the bonding plane of piece;T2b:
Extend the substrate surface of piece;T3:Pyrocondensation belt;1:Laser processing device;10:Chuck table;10a:The retaining surface of chuck table;
11:Laser beam irradiation unit;111:Concentrator;112:Collector lens;12:Process feed unit;14:Aligned units;140:It is infrared
Line camera;2:Grinding attachment;20:Keep workbench;20a:Keep the retaining surface of workbench;23:Y direction feed unit;
21:Grinding unit;210:Rotary shaft;212:Motor;213:Mounting seat;214:It is ground emery wheel;214a:Emery wheel base station;214b:
It is ground grinding tool;5:Chip chamber is every expanding unit;50:Ring-type workbench;50a:The retaining surface of ring-type workbench;50c:Ring-type works
The opening of platform;52:Stationary fixture;53:Extension drum;55:Ring-type worktable lifting unit;550:Cylinder body;551:Piston rod;6:Inhale
Draw holding workbench;60:Adsorption section;600:Adsorption plane;61:Framework;610:Upper surface;62:Attraction source;7:Heater.
Embodiment
Machined object W shown in Fig. 1 is, for example, semiconductor wafer of the profile for circle, on machined object W positive Wa,
Formed with multiple device D in the region of the clathrate divided by segmentation preset lines S.Machined object W is predetermined along segmentation
When line S is divided into each chip with device D, for example, by the laser processing device 1 shown in Fig. 2 in machined object W inside
Form the modification layer as segmentation starting point.Therefore, the protection band T1 shown in Fig. 1 turns into the state for being pasted on positive Wa.
Protection band T1 is, for example, with the discoid film with the external diameter of machined object W external diameter same degree, is possessed
There is the bonding plane T1a of bonding force.For example, bonding plane T1a, which has been used, can harden when irradiating ultraviolet and reduce bonding force
Be made up of propylene class base resin etc. UV hardening paste.By pasting the viscous of protection band T1 on machined object W positive Wa
Junction T1a, machined object W positive Wa turn into by state of the protection with T1 protections.
Laser processing device 1 for example, at least has:Chuck table 10, it carries out attracting holding to machined object W;And
Laser beam irradiation unit 11, it irradiates laser to the machined object W being maintained on chuck table 10.Chuck table 10 for example its
Profile is circle, by machined object W attracting holdings on the retaining surface 10a being made up of porous member etc..The energy of chuck table 10
It is enough to be rotated around the axle center of vertical direction, and can be moved back and forth in the X-axis direction by processing feed unit 12.
Laser beam irradiation unit 11 for example can vibrate for quilt with laser oscillator (not shown), the laser oscillator
Machining object W has the laser of the defined wavelength of permeability, passes through the laser light incident that makes to vibrate from laser oscillator to optically focused
The collector lens 112 of the inside of device 111, laser can be focused to machined object W inside.For example, machined object W is silicon wafer
Piece, want by laser beam irradiation unit 11 machined object W be internally formed good modification layer in the case of, shaken from laser
Swing the laser that device vibrates the wavelength of region of ultra-red.
The alignment list that the segmentation preset lines S to machined object W is detected is equipped near laser beam irradiation unit 11
Member 14.Aligned units 14 have:Infrared radiation unit (not shown), it irradiates infrared ray;And infrared camera 140,
It is as the optical system of capture infrared ray and the structure such as capturing element (infrared C CD) of corresponding with the infrared ray electric signal of output
Into, can be by image procossings such as pattern match to machined object W's according to the image obtained by infrared camera 140
Positive Wa segmentation preset lines S is detected.Laser beam irradiation unit 11 is integrally formed with aligned units 14, and both are linkedly in Y
Moved in direction of principal axis and Z-direction.
Hereinafter, to using laser processing device 1 to be formed along segmentation preset lines S on machined object W as segmentation starting point
The situation of modification layer illustrate.First, aligned so that the chuck table 10 of the laser processing device 1 shown in Fig. 2
Retaining surface 10a and machined object W the positive Wa sides by protection band T1 protections it is opposed, will be by the upside of using back side Wb sides
Machining object W is positioned on chuck table 10.Also, the attraction source (not shown) for making to be connected with chuck table 10 is acted
And by machined object W attracting holdings on chuck table 10.
Then, by processing feed unit 12 to the machined object W that is maintained on chuck table 10 in the-x direction
Fed (toward direction), and segmentation preset lines S is detected by aligned units 14.Here, the formation shown in Fig. 1 has
Segmentation preset lines S machined object W positive Wa is located at downside, directly not opposed with aligned units 14, but can be by infrared
Line camera 140 is shot from machined object W back side Wb sides through and to segmentation preset lines S.According to infrared camera
The image of segmentation preset lines S taken by 140, aligned units 14 carry out the image procossings such as pattern match, to splitting preset lines S
Position detected.
With being detected to segmentation preset lines S, laser beam irradiation unit 11 is driven in the Y-axis direction, shone
The contraposition penetrated on the segmentation preset lines S of laser and the Y direction of concentrator 111.For example, the contraposition is carried out so that segmentation preset lines
S center line is located at the underface of collector lens 112 possessed by concentrator 111.
Then, the focal point of the laser of defined wavelength is positioned at using concentrator 111 corresponding with segmentation preset lines S
The defined height and position of machined object W inside.Then, while being vibrated along segmentation preset lines S irradiations from laser oscillator
The laser assembled by collector lens 112 gone out, while entering in the-x direction according to the processing of regulation to machined object W
Feeding is processed to speed, is internally formed modification layer M in machined object W as shown in Figure 2.Modify layer M forming position example
Following location in this way, the position are in machined object W back side Wb and apart from completion thickness of the positive Wa equivalent to device chip
Top position between.
For example, the X-axis side finished is irradiated to a segmentation preset lines S when machined object W advances to laser in the-x direction
To defined position when, stop the irradiation of laser and temporarily cease processing of the machined object W in -X direction (toward direction)
Feeding, make laser beam irradiation unit 11 moved in +Y direction and pair with irradiated laser segmentation preset lines S-phase neighbour not yet according to
The segmentation preset lines S and concentrator 111 for penetrating laser are positioned in the Y-axis direction.Then, feed unit 11 is processed to being processed
Thing W is processed feeding in +X direction (returning direction), and segmentation preset lines S is shone in the same manner as the irradiation toward the laser on direction
Penetrate laser.By carrying out the irradiation of same laser successively, along the whole segmentation preset lines S extended in the X-axis direction from
Machined object W back side Wb sides irradiation laser, the modification layer M as segmentation starting point is internally formed in machined object W.And then when
Make chuck table 10 be rotated by 90 ° after when carrying out the irradiation of same laser, make a reservation for along crisscross whole segmentations
Line S forms modification layer M.
For example, machined object W back side Wb is ground to make formed with modification by the grinding attachment 2 shown in Fig. 3
Layer M machined object W is thinned to completion thickness, and makes crack to modify layer M by grinding force to split starting point in front
Wa sides extend, and thus, machined object W are divided into each device chip.
Grinding attachment 2 for example, at least has:Workbench 20 is kept, it carries out attracting holding to machined object W;And grinding
Unit 21, it keeps the machined object W on workbench 20 to carry out grinding to being maintained at.Keep such as its profile of workbench 20
For circle, by machined object W attracting holdings on the retaining surface 20a being made up of porous member etc..Keep workbench 20 can be around
The axle center of vertical direction is rotated, and can be moved back and forth in the Y-axis direction by Y direction feed unit 23.
Grinding unit 21 can be moved up and down by grinding and feeding unit 22, and the grinding and feeding unit 22 is single to grinding
Member 21 carries out grinding and feeding on relative to the remote or close Z-direction of holding workbench 20.Grinding and feeding unit 22 is for example
It is the ball screw framework acted by motor etc..Grinding unit 21 has:Rotary shaft 210, it is axially vertical side
To (Z-direction);Motor 212, it carries out rotation driving to rotary shaft 210;Circular mounting seat 213, itself and rotary shaft
210 lower end connection;And grinding emery wheel 214, its lower surface with mounting seat 213 in a manner of it can assemble and disassemble is connected.
Grinding emery wheel 214 has:Emery wheel base station 214a;And multiple grinding grinding tool 214b of approximately parallelepiped body shape, it
Be annularly disposed on emery wheel base station 214a bottom surface.For example, grinding grinding tool 214b is to utilize resinoid bond or metal knot
Mixture etc. shapes the fixed bondings such as diamond abrasive grain.In addition, grinding grinding tool 214b shape can also be integrally formed
For ring-type.
For example, in the inside of rotary shaft 210, it is formed through along the axial direction (Z-direction) of rotary shaft 210 with being ground water extraction
The stream (not shown) of the passage as grinding water of supply source connection, stream is by mounting seat 213 and emery wheel base station 214a's
Bottom surface opening towards grinding grinding tool 214b so as to spray grinding water.
Hereinafter, to being illustrated by grinding attachment 2 to be ground segmentation machined object W situation.First, with back side Wb sides
Machined object W is positioned on retaining surface 20a by state upward, to cause the center and the machined object that keep workbench 20
W center is substantially uniform.Then, by will the attraction caused by attraction source (not shown) be delivered to retaining surface 20a make by
Machining object W attracting holdings are on workbench 20 is kept.
Then, the holding workbench 20 that remain machined object W is made to be moved to the lower section of grinding unit 21 in +Y direction
And be ground possessed by grinding unit 21 emery wheel 214 and machined object W contraposition.For example, as shown in figure 3, according to as follows
Mode is aligned:Make the pivot of grinding emery wheel 214 relative to keeping the pivot of workbench 20 in +Y direction
Stagger according to the distance of regulation, make grinding grinding tool 214b rotational trajectory by keeping the pivot of workbench 20.
After contraposition of the grinding emery wheel 214 with machined object W possessed by grinding unit 21 has been carried out, to rotary shaft
210 are carrying out rotation driving in terms of +Z direction side on the direction of rotate counterclockwise, grinding emery wheel 214 is also rotated therewith.And
And grinding unit 21 is fed in the-z direction by grinding and feeding unit 22, by the grinding emery wheel 214 for making rotation
Grinding grinding tool 214b abutted with machined object W back side Wb and carry out grinding.In grinding, with holding workbench 20
Rotated, the machined object W being maintained on retaining surface 20a is also rotated, therefore is ground grinding tool 214b to machined object W's
Back side Wb entire surface carries out grinding.Also, in grinding, by the stream in rotary shaft 210 to being ground grinding tool
214b and machined object W contact site provides grinding water, to grinding grinding tool 214b and machined object W back side Wb contact site
Position cool down/clean.
When continuing grinding and machined object W is thinned into completion thickness, by being ground pressure along modification layer M effects
Power and make crack towards machined object W positive Wa extend, as shown in figure 3, machined object W is divided into each device of rectangle
Chip C.
As shown in figure 4, the machined object W for being divided into chip C is secured on extension piece T2, it is maintained by extension
Piece T2 can be realized the processing carried out by ring-shaped frame F by the state that ring-shaped frame F is supported, and protection band T1 is shelled
From.
It is, for example, the discoid sheet material with the external diameter bigger than machined object W external diameter to extend piece T2, for example, with by
Heat shrink is smaller and there is PET (polyethylene terephthalate) resin of appropriate retractility to prolong to mechanical external force
The substrate layer of the composition such as film or PEN (PEN) resin film is stretched, is had on substrate layer hard by being laminated UV
The bonding plane T2a for changing paste and being formed, the UV hardening paste can harden when irradiating ultraviolet and reduce bonding force.In addition, extension
The material of piece T2 substrate layer or thickness etc. can suitably be become according to machined object W species, machined object W thickness etc.
More.
The ring-shaped frame F of opening with circle back side Fb is pasted to the extension of the state on the upside of direction in Fig. 4
Piece T2 bonding plane T2a outer peripheral portion.And then machined object W is located in ring in a manner of back side Wb sides are towards downside
The extension piece T2 exposed in shape framework F opening bonding plane T2a top.Now, so that machined object W center and ring-type
The mode that the center of framework F opening is substantially uniform is aligned.Also, machined object W back side Wb is pressed against extension piece
Extension piece T2 is set to be pasted onto on the back side Wb of machined object on T2 bonding plane T2a.So machined object W turns into by extension
The state that piece T2 is supported by ring-shaped frame F, and then, protection band T1 is peeled off from machined object W positive Wa.
Then, extension piece T2 is extended so as between each chip C supported by extension piece T2 by ring-shaped frame F
It is spaced as defined in being formed.This is to prevent following situation:Due to being divided into chip C machined object W by extension piece T2
As the overall shape that maintain machined object W in the state of being supported by ring-shaped frame F, interval, institute are not present between chip C
Can be rubbed each other in the conveyance of machined object W afterwards or from chip C adjacent when extending piece T2 pickup chip C,
Produce chip defect and reduce chip C quality.
However, the inner peripheral Fe positioned at ring-shaped frame F and machined object W of extension piece T2 after extension outer peripheral edge Wd it
Between region T2c become loose state because of extension, thus, when being handled by ring-shaped frame F machined object W,
Need to prevent because causing chip C to be in contact with each other so as to damage chip C situation the relaxing of extension piece T2.Therefore, implement below
The chip distance maintaining method of the present invention.
(1) pyrocondensation belt gluing steps
For example, in the present embodiment, implementing pyrocondensation belt gluing steps first, it is located at ring-shaped frame F in extension piece T2
Inner peripheral Fe and machined object W outer peripheral edge Wd between region T2c paste multiple pyrocondensation belt T3.Pyrocondensation belt T3 is for example by extremely
The resin of few appropriate retractility with the heat shrink bigger than extension piece T2 and relative to mechanical external force is (for example, poly- third
Alkene or polyvinyl chloride etc.) form, its profile is formed as rectangle.Pyrocondensation belt T3 has in the present embodiment to be glued by what paste layer was formed
Junction, but can also not have bonding plane.In addition, compared with profile is formed as the pyrocondensation belt of ring-type, the pyrocondensation belt T3 examples of rectangle
If suppressing cost, and can also more easily be pasted.That is, for example, only by by the pyrocondensation belt straight line of strip
Cut off just can cut out the pyrocondensation belt T3 of rectangle shape, but the pyrocondensation belt of ring-type needs to cut into circle, therefore in cut-out operation
In along with numerous and diverse, also, produce the more part that must be discarded.
As shown in figure 5, the outer peripheral edge Wd of the inner peripheral Fe and machined object W positioned at ring-shaped frame F for extension piece T2
Between region T2c, by the pyrocondensation belt T3 of multiple rectangles (for example, amounting to 18 in the example of diagram) along machined object W week
Annularly pasted to certain interval is separated.Have what is easily stretched on vertical or horizontal any direction in pyrocondensation belt T3
In the case of characteristic, preferably make that pyrocondensation belt T3 easily flexible direction and machined object W's is radially consistent.
Also, for extension piece T2 region T2c, can also by the pyrocondensation belt T3 of multiple rectangles along machined object W's
The certain interval of circumferentially spaced and annularly paste (for example, 18 altogether) and then in radial outside by multiple pyrocondensation belts T3
(for example, 12 altogether) annularly paste a circle.
(2) chip chamber is every forming step
For example, after pyrocondensation belt gluing steps are implemented, by machined object W with by extension piece T2 by ring-shaped frame F
The state of supporting is transported to the chip chamber shown in Fig. 6 every on expanding unit 5.Chip chamber is every expanding unit 5 can be by expanding
Exhibition piece T2 is extended and makes the device of each chip C space expansion.Chip chamber is every expanding unit 5 for example with ring-type workbench
50, the ring-type workbench 50 has the external diameter bigger than extending piece T2 external diameter, and the opening 50c of ring-type workbench 50 diameter is formed
It is small for the external diameter than extension piece T2.4 are for example equably equipped with the peripheral part of ring-type workbench 50 (in the example in diagram only
Illustrate two) stationary fixture 52.Stationary fixture 52 can be turned by spring (not shown) etc. using rotary shaft 52c as axle
It is dynamic, ring-shaped frame F and extension piece T2 can be clamped into the retaining surface 50a of ring-type workbench 50 and the lower surface of stationary fixture 52
Between.
The cylindric extension drum 53 that height and position is fixed, ring-type are equipped in the opening 50c of ring-type workbench 50
The center of workbench 50 and the center for extending drum 53 are substantially uniform.The external diameter of the extension drum 53 is formed as the external diameter than extending piece T2
It is small and bigger than machined object W external diameter.
The attracting holding workbench 6 that attracting holding is carried out to machined object W is equipped in the inner circumferential side of extension drum 53.Attract
Workbench 6 is kept to have:Adsorption section 60, it is formed by porous part, has adsorption plane 600 in upper surface;Framework 61, its is right
Adsorption section 60 is supported;And attracting source 62, attraction is passed to adsorption section 60 by it.Adsorption plane 600 and framework 61 it is upper
Surface 610 is formed as same plane, by the way that attraction caused by attraction source 62 is passed into adsorption plane 600, will can be added
Work thing W is across extension piece T2 attracting holdings on adsorption plane 600.
Ring-type workbench 50 can for example be moved up and down in the Z-axis direction by ring-type worktable lifting unit 55.
Ring-type worktable lifting unit 55 is, for example, cylinder, and it has:The cylinder body 550 of bottomed cylindrical, it internally has not shown
Piston, there is bottom in base end side (-Z direction side);And piston rod 551, it is inserted into cylinder body 550, and one end is arranged on
On piston.The other end of piston rod 551 is fixed on the lower surface of ring-type workbench 50.By provided relative to cylinder body 550 (or
Discharge) air and the pressure of the inside of cylinder body 550 is changed so that piston rod 551 moves in the Z-axis direction, ring-type
Workbench 50 moves in the Z-axis direction.
Want to form defined interval between chip C, be located at for example, ring-shaped frame F is positioned in across extension piece T2
On the retaining surface 50a of the ring-type workbench 50 of altitude datum position.Then, stationary fixture 52 is made to be rotated and make ring-shaped frame
F and extension piece T2 are in the state being clamped between stationary fixture 52 and the retaining surface 50a of ring-type workbench 50.In the shape
Under state, the retaining surface 50a of ring-type workbench 50, in sustained height position, extends drum 53 with the upper end surface of the ring-type of extension drum 53
Upper surface from extension piece T2 base material surface side (lower face side in Fig. 6) be connected to extension piece T2 positioned at ring-shaped frame F's
Region T2c between inner peripheral Fe and machined object W outer peripheral edge Wd.Also, extend the ratio region in piece T2 base material surface side
Although the region of the inner the week side of boss of T2c is adsorbed face 600 and upper surface 610 supports, the attraction that adsorption plane 600 is not carried out to it is protected
Hold.
As shown in fig. 7, ring-type worktable lifting unit 55 is pressed from both sides by making ring-type workbench 50 between stationary fixture 52
Enter and declined to -Z direction in the state of ring-shaped frame F and extension piece T2, the retaining surface 50a of ring-type workbench 50 has been positioned at
Than extending the extension piece expanding location of the upper surface of drum 53 on the lower.As a result, extension drum 53 is relative to the phase of stationary fixture 52
Rise over the ground, the upper surface that extension piece T2 is expanded drum 53 jacks up and is radially oriented outside and radially extends.Also, pyrocondensation belt
T3 extends also by the tension force applied in the bonding force and horizontal direction that extend piece T2.Also, as extension piece T2 is expanded
Exhibition, defined interval V is formed between each chip C.In addition, interval V size is can be according to the decline of ring-type workbench 50
The size that position is suitably changed.
In addition, for example, it is also possible to implement pyrocondensation belt gluing steps after forming step having carried out chip chamber.
(3) piece collapse step is extended
As defined in form between the chips after the V of interval, make attraction source 62 connected with adsorption section 60 and to adsorption plane
600 implement sucking action, and attracting holding is carried out to the inner circumferential side of the region T2c in extension piece T2.Then, as shown in figure 8, example
Such as, when ring-type worktable lifting unit 55 makes ring-type workbench 50 rise in +Z direction so that the retaining surface of ring-type workbench 50
When sustained height position, the power for pulling extension piece T2 in the horizontal direction disappears for the upper end surface of ring-types of the 50a with extending drum 53
Lose, extension piece T2 tension force is released from.With this concomitantly, the piece T2 inner peripheral Fe positioned at ring-shaped frame F is extended with being processed
Region T2c between thing W outer peripheral edge Wd becomes loose state because of extension.Therefore, the heating unit 7 shown in Fig. 8 is passed through
The region T2c for extending piece T2 is heated together with pyrocondensation belt T3.
Heating unit 7 is, for example, the infrared heater for being capable of infra-red-emitting, from top in a non-contact manner to heat
The region T2c with T3 and extension piece T2 that contracts is heated.In addition, heating unit 7 can also be contact, and or
The storage heater of hot blast can be sprayed from nozzle.Because pyrocondensation belt T3 percent thermal shrinkage is larger, also, pyrocondensation belt T3 is in chip
It is expanded in the forming step of interval, so being heated by heating unit 7, such as pyrocondensation belt T3 is radially oriented inner side and receive
The size being reduced to before extension.Extension piece T2 hardly shrinks because of heat caused by the heating of heating unit 7, but pyrocondensation belt
T3 convergent force is broadcast to the region T2c for the extension piece T2 for being pasted with pyrocondensation belt T3 as mechanical external force, therefore relax
Extension piece T2 region T2c is radially oriented interior side-lining, the state being retracted to always before extension.Also, due to heating unit 7
Heating only pyrocondensation belt T3 and extension piece T2 region T2c are carried out, so can remain adjacent according to the size after extension
Each chip C interval V.And then because region T2c inner circumferential side is attracted to maintain on adsorption plane 600, so chip C is not
It can move, adjacent chip C interval V can be securely maintained.
After extension piece collapse step is completed, states of multiple chip C to be supported by extension piece T2 by ring-shaped frame F
It is transported on pick device (not shown), the state that the mutual interval V of chip C are expanded is maintained, and extends piece T2
Will not with loose state but the state to tighten returns to the state for being pasted on ring-shaped frame F, can prevent by ring
Chip C damages because of contact each other when shape framework F is handled machined object W.
In addition, the chip distance maintaining method of the present invention is not limited to above-mentioned embodiment, also, illustrated in accompanying drawing
Laser processing device 1, grinding attachment 2 and chip chamber are also not limited to this every structure of expanding unit 5 etc., be able to can send out
Wave the present invention effect in the range of suitably changed.
For example, in the present embodiment, formd by laser processing device 1 in machined object W modification layer M it
Afterwards, machined object W grinding and segmentation are carried out by grinding attachment 2, but can not also be entered by the grinding of grinding attachment 2
Row machined object W segmentation, and expansion bands T2 is extended so as to carry out machined object W every expanding unit 5 by chip chamber
Segmentation, while between the chips formed as defined in be spaced.
Also, machined object W segmentation can also be carried out without using laser processing device 1.I.e., first, can also lead to
The topping machanism with the cutting tool that can be rotated is crossed machined object W is implemented to cut from positive Wa sides along segmentation preset lines S
Processing is cut, the processing groove of depth as defined in formation on machined object W, afterwards, by being ground to machined object W from back side Wb sides
Chip is divided into height and position that the bottom of processing groove exposes is made.Afterwards, can also be right every expanding unit 5 by chip chamber
Expansion bands T2 is extended and forms defined interval between the chips.
Claims (1)
1. a kind of chip distance maintaining method, the shape for maintaining the interval of multiple chips to forming machined object to be extended
State, the machined object are supported in the state of extension piece is pasted on by the extension piece by ring-shaped frame, wherein, the chip
Distance maintaining method has the steps:
Chip chamber is extended to the extension piece every forming step and interval is formed between the chip;And
Piece collapse step is extended, is implementing the chip chamber after forming step, the interval between the chip is maintain
The extension piece between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object is heated under state and in machined object
The extension piece that outer circumferential side makes to have stretched shrinks,
The chip distance maintaining method also has following pyrocondensation belt gluing steps:At least implement the extension piece collapse step it
Before, multiple pyrocondensation belts are pasted onto on the extension piece between the inner peripheral of ring-shaped frame and the outer peripheral edge of machined object,
In the extension piece collapse step, the inner peripheral to ring-shaped frame and the extension piece between the outer peripheral edge of machined object and should
Pyrocondensation belt is together heated, so that the extension piece for being pasted with the region of the pyrocondensation belt shrinks.
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JP2016-176352 | 2016-09-09 | ||
JP2016176352A JP6741529B2 (en) | 2016-09-09 | 2016-09-09 | Tip spacing maintenance method |
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JP2022167030A (en) | 2021-04-22 | 2022-11-04 | 株式会社ディスコ | Chip spacing formation method |
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US6312800B1 (en) | 1997-02-10 | 2001-11-06 | Lintec Corporation | Pressure sensitive adhesive sheet for producing a chip |
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JP5378780B2 (en) | 2008-12-19 | 2013-12-25 | 株式会社ディスコ | Tape expansion method and tape expansion device |
JP5536555B2 (en) | 2010-06-22 | 2014-07-02 | 株式会社ディスコ | Expansion tape shrink device |
JP5013148B1 (en) | 2011-02-16 | 2012-08-29 | 株式会社東京精密 | Work dividing apparatus and work dividing method |
JP6249586B2 (en) | 2011-08-31 | 2017-12-20 | 株式会社東京精密 | Work dividing apparatus and work dividing method |
JP6298635B2 (en) | 2014-01-10 | 2018-03-20 | 株式会社ディスコ | Dividing device and workpiece dividing method |
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Patent Citations (4)
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JP2007005530A (en) * | 2005-06-23 | 2007-01-11 | Lintec Corp | Manufacturing method of chip product |
CN101887841A (en) * | 2009-05-11 | 2010-11-17 | 株式会社迪思科 | Adhesive tape expansion method |
CN104979261A (en) * | 2014-04-14 | 2015-10-14 | 株式会社迪思科 | Chip interval maintaining method |
CN105097479A (en) * | 2014-05-08 | 2015-11-25 | 株式会社迪思科 | Chip interval maintaining device and chip interval maintaining method |
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CN113196460A (en) * | 2018-12-25 | 2021-07-30 | 东丽工程株式会社 | Holding table |
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KR102305385B1 (en) | 2021-09-24 |
CN107808847B (en) | 2023-04-11 |
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JP6741529B2 (en) | 2020-08-19 |
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TWI718326B (en) | 2021-02-11 |
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