CN109300843A - Auxiliary implement used in the processing method of chip and the processing of chip - Google Patents
Auxiliary implement used in the processing method of chip and the processing of chip Download PDFInfo
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- CN109300843A CN109300843A CN201810800995.8A CN201810800995A CN109300843A CN 109300843 A CN109300843 A CN 109300843A CN 201810800995 A CN201810800995 A CN 201810800995A CN 109300843 A CN109300843 A CN 109300843A
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- chip
- opening portion
- auxiliary implement
- supporting part
- frame
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- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 74
- 230000011218 segmentation Effects 0.000 claims abstract description 40
- 230000004048 modification Effects 0.000 claims abstract description 22
- 238000012986 modification Methods 0.000 claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 238000003860 storage Methods 0.000 claims description 7
- 230000035699 permeability Effects 0.000 claims description 6
- 239000002159 nanocrystal Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 24
- 230000014759 maintenance of location Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 208000033999 Device damage Diseases 0.000 description 3
- 229910001651 emery Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
The present invention provide a kind of processing method of chip, chip processing used in auxiliary implement, the focal point of laser beam can be located in the inside of chip to form modification layer from the back side of chip in the case where not damage device front, not damaging the device formed by microstructure.According to the present invention, a kind of processing method of chip is provided, it is included at least: auxiliary implement preparatory process, prepare the auxiliary implement for having the first opening portion, supporting part, the second opening portion, first opening portion is for storing chip, the shape substantially same shape of itself and chip, the supporting part is formed in the bottom of first opening portion, it avoids that the periphery remaining area is contacted and supported with the device area, second opening portion is formed in the bottom of first opening portion and the inside in the supporting part；Frame supports process；Chuck table loads process；Modify layer formation process；And segmentation process.
Description
Technical field
The present invention relates to auxiliary implements used in the processing of the processing method of chip and the chip, are formed in not damaging
It is processed in the case where the device of the face side of chip.
Background technique
It is divided using segmentation preset lines and is formed with IC, LSI, MEMS (MEMS, Micro Electro in front
Mechanical Systems), the chips of the devices such as LED each device is divided by cutter device, laser processing device, and
It is used in the electrical equipments such as mobile phone, PC.
Laser processing device substantially includes: chuck table, attracting holding machined object；Laser light irradiation unit,
It, which is irradiated, has for the machined object that the chuck table is kept for the laser beam of the wavelength of permeability；Camera shooting is single
Member detects the region to be processed；And processing feed unit, make the chuck table and the laser beam
Illumination unit relatively carries out processing feeding, and focal point is located in the inside of segmentation preset lines, is formed along segmentation preset lines
Layer is modified, so as to divide the wafer into each device (for example, referring to patent document 1).
According to the technology recorded in above patent document 1, modification layer is formed along the segmentation preset lines of chip, so as to
The chip is divided into each device.But multiple functional layers are laminated in the face side of chip, it is difficult to sometimes from being formed with point
The focal point of laser beam is located in inside by the face side for cutting the chip of preset lines.In this case, from the back side of chip
The focal point of laser beam is located in the inside of segmentation preset lines and forms modification layer in the inside of chip.
Existing technical literature
Patent document
Patent document 1: No. 3408805 bulletins of Japanese Patent No.
Summary of the invention
Problems to be solved by the invention
As described above, be difficult to from chip front the focal point of laser beam is located in inside in the case where, pass through
The focal point of laser beam is located in the inside of segmentation preset lines from the back side of chip and is formed and is modified in the inside of chip
Layer, can divide the wafer into each device.But when directly utilizing the face side of chuck table attracting holding chip,
Since contacting with for the absorption chuck with chuck table may damage the device for being formed in the face side of chip.In addition, being
Not damage device, it is also contemplated that paste protection band in the face side of chip and be retained in chuck table to be processed
Method, but after protection band to be affixed to the face side of chip and implements segmentation process, by the protection band from face side
When removing, a part for constituting the adhesive layer of protection band is attached to device and does not fall off, and generates and adds in process behind sometimes
Work is bad etc., incurs the reduction of quality.In addition, each device is formed by fine structural body, thus is being removed in combination of MEMS wafer
There are problems that making the device damage when protection band.
The present invention has been made in view of the above-described circumstances, and major technique project is to provide a kind of processing method of chip
And the auxiliary implement used in the processing of the chip, the processing method can not damage device front and do not damage
The focal point of laser beam is located in chip from the back side of chip in the case where the device that wound is formed by fine structural body
Inside is to form modification layer.
Means for solving the problems
In order to solve above-mentioned major technique project, according to the present invention, provide a kind of processing method of chip, will be provided with by
Segmentation preset lines divide and are formed with the device area of multiple devices and around the periphery remaining area of the device area in front
Chip be divided into each device, this method is at least made of following processes: auxiliary implement preparatory process, and preparation has first and opens
The auxiliary implement of oral area, supporting part and the second opening portion, first opening portion is for storing chip, the shape with chip
Substantially same shape, the supporting part are formed in the bottom of first opening portion, same avoiding contacting with the device area
The Shi Zhicheng periphery remaining area, second opening portion are formed in the bottom of first opening portion and in the supporting parts
Side；Frame supports process, and the back side of chip is affixed to dicing tape and is received using the frame of the opening with storage chip
The chip is affixed to dicing tape to support using the frame by the state of nano-crystal piece；Chuck table loads process, will
The auxiliary implement is placed in the chuck table for having attracting holding unit and the face side of the chip is accommodated in the auxiliary
First opening portion of utensil, makes attraction act on the chuck table；Layer formation process is modified, will have and the chip is come
Say that the focal point of the laser beam of the wavelength for permeability is located in internal and carries out across the dicing tape from the back side of the chip
Irradiation forms modification layer along segmentation preset lines；And segmentation process, the chip that frame is held in by dicing tape is assigned
External force divides the wafer into each device along the segmentation preset lines.
For the auxiliary implement prepared in the auxiliary implement preparatory process, it is preferably configured as the periphery of first opening portion
Front be processed into asperities and scatter laser beam used in the modification layer formation process.
For the auxiliary implement prepared in the auxiliary implement preparatory process, preferably by the bottom of second opening portion and the branch
The scale of bearing portion is set as 10 μm~20 μm.
In the case where it is MEMS that the device area of the chip, which is formed by device, the present invention is particularly suitable.
In order to solve above-mentioned major technique project, according to the present invention, a kind of auxiliary implement is provided, it is pre- by dividing to having
Alignment divides and is formed with the device area of multiple devices and the chip of the periphery remaining area around the device area in front
It is supported, which has the first opening portion and the second opening portion, and first opening portion is used to store chip,
With the shape substantially same shape of chip；Second opening portion is formed in the bottom of first opening portion, has bearing
Portion, the supporting part support periphery remaining area while avoiding contacting with the device area.
Invention effect
The present invention provides a kind of processing method of chip, will be provided with being divided and being formed in front more by segmentation preset lines
The chip of the device area of a device and the periphery remaining area around device area is divided into each device, this method at least by
Following processes are constituted: auxiliary implement preparatory process prepares the assistor for having the first opening portion, supporting part and the second opening portion
Tool, first opening portion is for storing chip, the shape substantially same shape with chip, and the supporting part is formed in the
The bottom of one opening portion supports periphery remaining area while avoiding contacting with device area, and second opening portion is formed
Bottom in the first opening portion and the inside in supporting part；Frame supports process, and the back side of chip is affixed to dicing tape simultaneously
And the state of the frame storage chip using the opening with storage chip, chip is affixed into dicing tape and is carried out using frame
Bearing；Chuck table loads process, auxiliary implement is placed in the chuck table for having attracting holding unit and will be brilliant
The face side of piece is accommodated in the first opening portion of auxiliary implement, and attraction is made to act on chuck table；Layer formation process is modified,
Focal point with the laser beam for chip for the wavelength of permeability is positioned across dicing tape from the back side of chip
It is irradiated in inside, forms modification layer along segmentation preset lines；And segmentation process, frame is held in by dicing tape
The chip of frame assigns external force, each device is divided the wafer into along the segmentation preset lines, even if as a result, at the back side from chip
Laser beam is irradiated not also to be capable of the front of damage device and be formed in the inside of chip in the case where implementing laser processing in side
Modify layer.In addition, pasting the protection band etc. for having adhesive layer without the front in chip, it is thus possible to overcome one of adhesive layer
Divide the problem of being attached to device and reducing quality or make device damage in removing.
According to the present invention, a kind of auxiliary implement is provided, is divided by segmentation preset lines and is formed in front more to having
The chip of the device area of a device and the periphery remaining area around the device area is supported, which has
One opening portion and the second opening portion, first opening portion is for storing chip, the shape substantially phase similar shape with chip
Shape；Second opening portion is formed in the bottom of first opening portion, and with supporting part, which is being avoided and the device
Periphery remaining area is supported while region contacts.By the way that the auxiliary implement is used for laser processing, even if from chip
Back side irradiation laser beam come in the case where implementing laser processing, be not capable of the front of damage device yet and in chip
Portion forms modification layer.In addition, pasting the protection band etc. for having adhesive layer without the front in chip, it is thus possible to overcome adhesive layer
A part be attached to device and make quality reduce or removing when make device damage the problem of.
Detailed description of the invention
Fig. 1 is the overall perspective view and schematic sectional view of the auxiliary implement constituted based on the present invention.
Fig. 2 is the schematic diagram for illustrating frame bearing process of the invention.
Fig. 3 is the overall perspective view of the laser processing device constituted to implement laser processing of the invention.
Fig. 4 is the schematic diagram for illustrating chuck table mounting process of the invention.
Fig. 5 is the schematic diagram for illustrating modification layer formation process of the invention.
Fig. 6 is the schematic diagram for illustrating segmentation process of the invention.
Specific embodiment
Hereinafter, referring to attached drawing to used in the processing method of chip and the processing of the chip constituted based on the present invention
Auxiliary implement is described in detail.
(auxiliary implement preparatory process)
(a) of Fig. 1, which is shown, to be prepared in the auxiliary implement preparatory process of the processing method based on chip of the invention
The overall perspective view of auxiliary implement 100, (b) of Fig. 1 show the Section A-A figure of (a) of Fig. 1.Auxiliary implement 100 for example with
The diameter of the diameter+10mm of chip or so is made of Si (silicon), has the first opening portion 120, which uses
It is roughly the same shape with the shape of the aftermentioned chip as machined object in storage chip.In addition, auxiliary implement 100 has
Standby supporting part 122 and the second opening portion 130, make to be formed with device it is face-down by wafer storage in the first opening portion 120
Bottom in the case where, which supports not formed device while the device area for avoiding and being formed with device contacts
The periphery remaining area of part；Second opening portion 130 is formed in the bottom of the first opening portion 120 and in the medial area of supporting part 122
Domain；Bottom wall 132 is formed in the bottom of the second opening portion 130.Above-mentioned auxiliary implement 100 can for example pass through process below
To manufacture.
Firstly, preparing the diameter with the diameter+10mm relative to the chip to be processed and with relative to processing
Chip thickness+0.6mm thickness Si substrate.Next, using annularly having the grinding emery wheel for being ground grinding tool for Si
The upper surface of substrate is ground 0.1mm, forms asperities, wherein the grinding grinding tool is the diamond abrasive grain for being 50 μm or so by partial size
It is fixed and is formed with resinoid bond.Then, will annularly have mill with 1/2 or so diameter of the wafer diameter to be processed
The outer circumference end that the grinding emery wheel of skiving tool is located in distance Si substrate is less than the inside of 5mm, is ground to 500 μm of depth, is formed
First opening portion 120 of shape roughly the same with chip, wherein the grinding grinding tool is the Buddha's warrior attendant stone mill for being 20 μm or so by partial size
Grain is fixed with resinoid bond and is formed.Further, the grinding emery wheel for foring the first opening portion 120 first is located in open
The bottom of oral area 120 and according to width corresponding with width (2~3mm) of periphery remaining area of the chip to be processed (2~
It 3mm) is located in position in the inner part, remains supporting part 122, is ground to 20 μm of depth, forms the second opening portion 130.Pass through
Auxiliary implement 100 is completed above.
It will be around the periphery 112 of the first opening portion 120 of auxiliary implement 100 and being manufactured using above-mentioned process
Be formed as asperities, so that the laser beam that aftermentioned chip is irradiated when processing scatters.It should be noted that periphery
112 are not limited to be ground using above-mentioned condition, as long as being formed as that the laser beam irradiated in processing is made to occur to dissipate
The asperities for the degree penetrated.
The depth of first opening portion 120 of auxiliary implement 100 is set according to the thickness for the chip to be processed, at this
500 μm or so of depth is for example set as in embodiment.In addition, the depth of the second opening portion 130, i.e. from bottom 132 to bearing
The scale in portion 122 is set to 20 μm.It should be noted that as long as the scale is not contact to be accommodated in the first opening portion 120
The scale of the degree of the device forming face of chip, is preferably set to 10~20 μm of degree.It should be noted that for convenience
For the sake of, Fig. 1 is that the composition of auxiliary implement 100 is illustrated in a manner of understandable, is not inconsistent with actual size.
Before implementing processing to the chip as machined object, auxiliary implement 100 illustrated above is prepared in advance, thus complete
At auxiliary implement preparatory process.
(frame bearing process)
Following implementation framework supports process.When implementation framework supports process, firstly, preparing as shown in (a) of Fig. 2
Roughly circular chip 10 as machined object.Include about chip 10, such as to the chip implementation being made of Si (silicon)
The processing of photoetching process and etching, in the device region marked off by mutually orthogonal a plurality of segmentation preset lines 12 on positive 10a
Domain is formed with multiple devices (MEMS) 14.Not formed device is being formed with around the periphery for the device area for being formed with the device 14
The periphery remaining area 10c of part 14.The back side 10b of chip 10 is affixed to dicing tape T and stores chip 10 using having
Opening frame F storage chip 10 state, which is affixed into dicing tape T and is supported using frame F.It is logical
It crosses the above frame of completing and supports process (referring to (b) of Fig. 2).
If completing above-mentioned frame bearing process, implements chuck table mounting process, chip 10 is held in sharp
The chuck table of optical machining device.Add referring to Fig. 3 to for the laser realizing the processing method of chip of the invention and constituting
Tooling is set 2 and is illustrated.
Laser processing device 2 shown in Fig. 3 has: holding unit 22, keeps machined object；Mobile unit 23, matches
On static base station 2a, keep holding unit 22 mobile；Laser light irradiation unit 24, the quilt that holding unit 22 is kept
Machining object irradiates laser beam；And framework 50, as the mobile unit 23 on static base station 2a side along shown in arrow Z
Z-direction erect setting vertical wall portion 51 and horizontal walls 52 structure horizontally extending from the upper end of vertical wall portion 51
At.The laser light for constituting the major part of laser processing device 2 of the invention is built-in with inside the horizontal walls 52 of framework 50
The optical system of line illumination unit 24 is equipped in the front end lower face side of horizontal walls 52 and constitutes laser light irradiation unit
24 condenser 241, and relative to condenser 241, to be equipped with camera shooting single for the adjacent position in direction shown in arrow X along figure
Member 26.The camera unit 26 includes: the common photographing element (CCD) shot by luminous ray；Machined object is shone
Penetrate the infrared radiation unit of infrared ray；Capture the optical system of the infrared ray irradiated by infrared radiation unit；And it is defeated
The photographing element (infrared C CD) of electric signal corresponding with the infrared ray that the optical system is captured out.
Holding unit 22 includes: rectangular-shaped X-direction movable plate 30, can be free in X-direction shown in arrow X in figure
Movably it is equipped on base station 2a；Rectangular-shaped Y-direction movable plate 31, can move freely in Y-direction shown in arrow Y in figure
Ground is equipped on X-direction movable plate 30；Cylindric pillar 32, is fixed on the upper surface of Y-direction movable plate 31；And it is rectangular-shaped
Cover plate 33, be fixed on the upper end of pillar 32.It is equipped with chuck table 34 in cover plate 33, is consisted of by being formed in this
Long hole on cover plate 33 and extend upwards, the machined object of round is kept, is driven using rotation (not shown)
Unit is rotated.It is configured in the upper surface of chuck table 34 by the absorption chuck 35 of substantial horizontal-extending round
The attracting holding unit of composition, the absorption chuck 35 are formed by porous material.Chuck 35 is adsorbed using the stream for passing through pillar 32
Road is connect with attraction unit (not shown), is equably configured with 4 fixtures 36 around absorption chuck 35, they will added
For holding the frame F kept to chip 10 when work object is fixed on chuck table 34.It should be noted that X-direction is
Direction shown by arrow X in Fig. 1, Y-direction are direction shown by arrow Y, are the directions orthogonal with X-direction.By X-direction, Y-direction
It is horizontal on the flat surface of defined.
Mobile unit 23 includes X-direction mobile unit 40 and Y-direction mobile unit 42.X-direction mobile unit 40 is by rolling
The rotary motion of motor is converted into moving along a straight line and being transferred to X-direction movable plate 30 by ballscrew, makes 30 edge of X-direction movable plate
Guide rail on base station 2a retreat in the X direction.Y-direction mobile unit 42 turns the rotary motion of motor by ball-screw
It changes into and moves along a straight line and be transferred to Y-direction movable plate 31, make guide rail of the Y-direction movable plate 31 along the X direction on movable plate 30 in Y
It retreats on direction.It should be noted that, although diagram is omitted, but distinguish in X-direction mobile unit 40, Y-direction mobile unit 42
It is equipped with position detection unit, is accurately detected the position of the X-direction of chuck table 34, the position of Y-direction, circumferential rotation
Position, based on signal driving X-direction mobile unit 40, the Y-direction mobile unit 42 and not indicated by aftermentioned control unit
Chuck table 34 can be positioned accurately at arbitrary position and angle by the rotary drive unit of diagram.It needs to illustrate
It is that above-mentioned 2 entirety of laser processing device and mobile unit 23 etc. are configured to using not shown under common machining state
Cover (omitting it for ease of description), the covering such as corrugated cover so that dust or dust etc. will not enter inside.
The laser processing device 2 of present embodiment is substantially constructed as described above, real to then said frame bearing process below
The chuck table mounting process applied is illustrated.
(chuck table mounting process)
In chuck table mounting process, as shown in (a) of Fig. 4, uploaded in the absorption chuck 35 of chuck table 34
It sets auxiliary implement 100 and the positive side 10a of the chip for being formed with device 14 10 is made to be accommodated in the first of auxiliary implement 100 downward
Opening portion 120, acting on 4 fixtures 36 remains the frame F of chip 10 to be fixed.Further by making to attract masterpiece
For chuck table 34 absorption chuck 35 and attracting holding auxiliary implement 100.At this point, making enclosing for the positive 10a of chip 10
Periphery remaining area 10c around the device area for being formed with device 14 is abutted and is maintained at the supporting part 122 of auxiliary implement 100
The supporting part 122.As a result, as shown in the schematic sectional view in (b) of Fig. 4, dicing tape T is located at upper space, chip 10 every
Auxiliary implement 100 be maintained on the absorption chuck 35 of chuck table 34, and have the device of device 14 in the formation of chip 10
Ensure space (about 20 μm) between part region and the bottom wall 132 of auxiliary implement 100.Work is loaded by completing chuck table above
Sequence.
(modification layer formation process)
As described above, implementing to modify layer formation process, in chip 10 if completing chuck table mounting process
Inside formed modification layer.Modification layer formation process is implemented especially by following procedure.
If chip 10 and auxiliary implement 100 are held together on chuck table 34, keep processing feed unit 23 dynamic
Make, chuck table 34 is located in the underface of camera unit 26.Chuck table 34 be located in camera unit 26 just under
Fang Shi executes alignment operation, utilizes camera unit 26 and control unit (not shown) to be laser machined to chip 10
Machining area is detected.That is, camera unit 26 and control unit execute the image procossings such as pattern match, for carrying out along crystalline substance
The segmentation preset lines 12 of piece 10 irradiate the condenser 241 of the laser light irradiation unit 24 of laser beam LB and pair of machining area
Position, to complete the alignment process of laser light irradiation position.At this point, although the formation of chip 10 is having segmentation preset lines 12 just
Face 10a is located at downside, but since camera unit 26 is as described above by the optical system of infrared radiation unit and capture infrared ray
And photographing element (infrared C CD) of corresponding with the infrared ray electric signal of output etc. is constituted, thus can through dicing tape T with
Chip 10 and the segmentation preset lines 12 of the positive side 10a are shot.
If implementing above-mentioned alignment process, such as implements modification layer formation process shown in (a) of Fig. 5, cross dicing tape
T, have for chip 10 along the segmentation irradiation of preset lines 12 for the laser beam of the wavelength of permeability across dicing tape T
LB forms modification layer 200 in the inside of chip 10.More specifically, chuck table 34 is moved to irradiation laser beam LB
Laser light irradiation unit 24 condenser 241 where laser light irradiation region, by defined segmentation preset lines 12
One end is located in immediately below the condenser 241 of laser light irradiation unit 24.Then, the laser light that will be irradiated from condenser 241
The focal point of line LB is located in the inside of chip 10, has for chip 10 from the irradiation of condenser 24 for permeability on one side
It is fast that the pulse laser light LB of wavelength feeds the direction shown by arrow X along figure of chuck table 34 with defined processing
Degree movement, until being moved to the other end for dividing preset lines 12.In such processing, make holding unit 22, mobile list on one side
Member 23 acts, and implements the laser processing that modification layer is formed along whole segmentation preset lines 12 on one side (referring to (b) of Fig. 5).It needs
It is noted that (b) of Fig. 5 is to show to take out chip 10 from auxiliary implement 100 and make its state of front side 10a upward
Figure.
The laser processing condition implemented in above-mentioned laser processing is for example set as follows.
In the present invention, the splicing tape etc. for having the positive side 10a of device 14 to be protected the formation of chip 10 is not pasted,
And implement to laser machine using auxiliary implement as described above.Thus, after implementing laser processing, without removing cementability
Band etc., even if foring the device of the circuit of fine complexity as MEMS device, the problems such as will not being damaged.
When the laser processing stated on the implementation, opening for the irradiation of laser beam LB is started for defined segmentation preset lines 12
Beginning and terminates the end position of irradiation of laser beam LB and is both located in from the segmentation preset lines 12 on chip 10 at position
End is slightly to the position of 112 side of the periphery of auxiliary implement 100.Herein, in the present invention, as described above, auxiliary implement 100 it is outer
Asperities is processed into the front in week 112, so that laser beam LB is scattered in irradiation, even if to the periphery of auxiliary implement 100
112 irradiation laser beams, prevented also from deterioration.It should be noted that the width of the periphery 112 of auxiliary implement 100 be preferably 3~
The degree of 5mm.By completing modification layer formation process above.
(segmentation process)
As described above, implementing segmentation process if completing modification layer formation process.Referring to Fig. 6 in present embodiment
In the segmenting device 70 that is constituted to implement segmentation process be illustrated.
In the segmenting device 70 of diagram, by the frame retention feature for keeping the cricoid frame F kept to chip 10
71 and be disposed in frame retention feature 71 periphery as fixed cell multiple fixtures 72 constitute frame holding unit.
In addition, having and matching to be extended to the dicing tape T being mounted on the cricoid frame F that the frame holding unit is kept
It is located at the extension drum 75 of the inside of frame retention feature 71.The extension drum 75 has the internal diameter for being less than cricoid frame F, is greater than and glues
It is labelled to the internal diameter and outer diameter of the outer diameter of the chip 10 for the dicing tape T being installed on ring-shaped frame F.In addition, extension drum 75 is under
End has support lug (diagram is omitted) that is radially projecting and being formed, in the support lug, in order to make frame maintaining part
Part 71 retreats along the vertical direction and multiple cylinders 73 is arranged, and the piston rod 74 retreated along the vertical direction using cylinder 73 is attached at frame
The lower surface of frame holding member 71.It is configured to like this by the bearing unit that multiple cylinders 73, piston rod 74 are constituted in base
Level is set selectively moved between expanding location, and shown in solid in (a) of the base position such as Fig. 6 is that cricoid frame is protected
Holding component 71 and extending the upper end of drum 75 is the position of roughly same height, which is cricoid as shown in double dot dash line
The upper end of 71 extended distance drum 75 of frame retention feature is the position of the lower section of specified amount.
The effect of above-mentioned segmenting device 70 is illustrated.It will be supported with by dicing tape T along segmentation preset lines 12
The cricoid frame F for being formed with the chip 10 of modification layer 200 is placed in the mounting surface of frame retention feature 71, and utilizes fixture
72 are fixed on frame retention feature 71.At this point, frame retention feature 71 is positioned in benchmark position shown in solid in (a) of Fig. 6
It sets.
If the cricoid frame F for being supported with chip 10 by dicing tape T is fixed on and is positioned at base shown in solid in figure
The frame retention feature 71 that level is set then makes to constitute multiple cylinders 73 with expanding element and acts, makes cricoid frame maintaining part
Part 71 declines.The cricoid frame F being fixed in the mounting surface of frame retention feature 71 as a result, also declines, thus such as in figure pairs
Shown in chain-dotted line, the dicing tape T being mounted on cricoid frame F is abutted with the upper edge of the extension drum 75 with respect to rising and is expanded
Exhibition.As a result, drawing force is radial to act on the chip 10 for being pasted on dicing tape T, it is pre- along segmentation as shown in (b) of Fig. 6
The modification layer 200 that alignment 12 is formed becomes segmentation starting point, forms cut-off rule 210 along each device 14.By completing above point
Cut process.
If completing above-mentioned segmentation process, the suitable pickup unit of application is divided into single from dicing tape T pickup
Device 14, is transported to subsequent processing.
The present invention is not limited to above-mentioned embodiments, as long as comprising within the technical scope of the present invention, it can imagine
Various modifications example.In above embodiment, the case where device 14 is MEMS is shown, but the present invention is not limited thereto, to shape
It also can be using the present invention when being processed at the chip of other devices such as IC, LSI, LED.
Symbol description
2: laser processing device
10: chip
10a: front
10b: the back side
10c: periphery remaining area
12: segmentation preset lines
14: device
22: holding unit
23: mobile unit
34: chuck table
35: absorption chuck
36: fixture
The direction 40:X mobile unit
The direction 42:Y mobile unit
70: segmenting device
100: auxiliary implement
112: periphery
120: the first opening portions
122: supporting part
130: the second opening portions
132: bottom wall
Claims (7)
1. a kind of processing method of chip will be provided with being divided by segmentation preset lines and being formed with the device of multiple devices in front
The chip of region and the periphery remaining area around the device area is divided into each device, and this method is at least by following process structures
At:
Auxiliary implement preparatory process prepares have the auxiliary implement of the first opening portion, supporting part and the second opening portion, and described the
One opening portion is for storing chip, the shape substantially same shape with chip, and the supporting part is formed in first opening
The bottom in portion, supports the periphery remaining area while avoiding and contacting with the device area, and second opening portion is formed in
The bottom of first opening portion and inside in the supporting part；
Frame supports process, and the back side of chip is affixed to dicing tape and is received using the frame of the opening with storage chip
The chip is affixed to dicing tape to support using the frame by the state of nano-crystal piece；
Chuck table loads process, which is placed in the chuck table for having attracting holding unit and should
The face side of chip is accommodated in the first opening portion of the auxiliary implement, and attraction is made to act on the chuck table；
Layer formation process is modified, by the focal point of the laser beam with the wavelength for for the chip being permeability across this
Dicing tape is located in internal and is irradiated from the back side of the chip, forms modification layer along segmentation preset lines；And
Segmentation process, assigns external force to the chip for being held in frame by dicing tape, divides chip along the segmentation preset lines
It is cut into each device.
2. the processing method of chip as described in claim 1, wherein auxiliary for preparing in the auxiliary implement preparatory process
Utensil is helped, asperities is processed into the front of the periphery of first opening portion and makes laser light used in the modification layer formation process
Line scatters.
3. the processing method of chip as claimed in claim 1 or 2, wherein for preparing in the auxiliary implement preparatory process
Auxiliary implement, the scale of the bottom of second opening portion and the supporting part is set as 10 μm~20 μm.
4. the processing method of chip according to any one of claims 1 to 3, wherein in the device area institute of the chip
The device of formation is MEMS.
5. a kind of auxiliary implement, to have by segmentation preset lines divide and front be formed with multiple devices device area and
Chip around the periphery remaining area of the device area is supported,
The auxiliary implement has the first opening portion and the second opening portion, and first opening portion is for storing chip, with crystalline substance
The shape of piece substantially same shape, second opening portion are formed in the bottom of first opening portion, should with supporting part
Supporting part supports periphery remaining area while avoiding contacting with the device area.
6. auxiliary implement as claimed in claim 5, wherein for the auxiliary implement, just by the periphery of first opening portion
Face is formed as asperities and scatters laser beam.
7. such as auxiliary implement described in claim 5 or 6, wherein for the auxiliary implement, by the bottom of second opening portion with
The scale of the supporting part is set as 10 μm~20 μm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017143565A JP6935257B2 (en) | 2017-07-25 | 2017-07-25 | Wafer processing method and auxiliary tools used for wafer processing |
| JP2017-143565 | 2017-07-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109300843A true CN109300843A (en) | 2019-02-01 |
| CN109300843B CN109300843B (en) | 2024-03-01 |
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| CN201810800995.8A Active CN109300843B (en) | 2017-07-25 | 2018-07-20 | Wafer processing method and auxiliary tool used in wafer processing |
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| Country | Link |
|---|---|
| JP (1) | JP6935257B2 (en) |
| KR (1) | KR102561376B1 (en) |
| CN (1) | CN109300843B (en) |
| TW (1) | TWI761558B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113732525A (en) * | 2021-09-03 | 2021-12-03 | 湖北三维半导体集成创新中心有限责任公司 | Wafer cutting method |
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| US20090325467A1 (en) * | 2006-07-14 | 2009-12-31 | Tokyo Ohka Kogyo Co., Ltd. | Method of Thinning Wafer and Support plate |
| JP2010073884A (en) * | 2008-09-18 | 2010-04-02 | Fujitsu Microelectronics Ltd | Jig for semiconductor wafer and method of manufacturing semiconductor device |
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| KR19990030006U (en) * | 1997-12-29 | 1999-07-26 | 구본준 | Wafer holder |
| JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
| JP2004273895A (en) * | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | Dividing method of semiconductor wafer |
| JP2010141061A (en) | 2008-12-10 | 2010-06-24 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Tool used for method of manufacturing epitaxial silicon wafer |
| TW201630105A (en) | 2015-02-12 | 2016-08-16 | 漢民科技股份有限公司 | Wafer holder |
| JP5641766B2 (en) * | 2010-04-22 | 2014-12-17 | 株式会社ディスコ | Wafer dividing method |
| JP5294358B2 (en) * | 2012-01-06 | 2013-09-18 | 古河電気工業株式会社 | Wafer processing tape and semiconductor device manufacturing method using the same |
| JP2013152995A (en) * | 2012-01-24 | 2013-08-08 | Disco Abrasive Syst Ltd | Method for processing wafer |
| JP6360411B2 (en) * | 2014-10-09 | 2018-07-18 | 株式会社ディスコ | Wafer processing method |
| JP2016147342A (en) * | 2015-02-12 | 2016-08-18 | 株式会社ディスコ | Chuck table for processing device |
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2017
- 2017-07-25 JP JP2017143565A patent/JP6935257B2/en active Active
-
2018
- 2018-07-11 KR KR1020180080368A patent/KR102561376B1/en active IP Right Grant
- 2018-07-20 CN CN201810800995.8A patent/CN109300843B/en active Active
- 2018-07-20 TW TW107125156A patent/TWI761558B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090325467A1 (en) * | 2006-07-14 | 2009-12-31 | Tokyo Ohka Kogyo Co., Ltd. | Method of Thinning Wafer and Support plate |
| JP2010073884A (en) * | 2008-09-18 | 2010-04-02 | Fujitsu Microelectronics Ltd | Jig for semiconductor wafer and method of manufacturing semiconductor device |
| JP2013041908A (en) * | 2011-08-12 | 2013-02-28 | Disco Abrasive Syst Ltd | Method of dividing optical device wafer |
| JP2013247130A (en) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | Wafer division method |
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| CN113732525A (en) * | 2021-09-03 | 2021-12-03 | 湖北三维半导体集成创新中心有限责任公司 | Wafer cutting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019029368A (en) | 2019-02-21 |
| KR102561376B1 (en) | 2023-07-28 |
| TWI761558B (en) | 2022-04-21 |
| CN109300843B (en) | 2024-03-01 |
| KR20190011675A (en) | 2019-02-07 |
| TW201909336A (en) | 2019-03-01 |
| JP6935257B2 (en) | 2021-09-15 |
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