CN105261560B - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
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- CN105261560B CN105261560B CN201510358142.XA CN201510358142A CN105261560B CN 105261560 B CN105261560 B CN 105261560B CN 201510358142 A CN201510358142 A CN 201510358142A CN 105261560 B CN105261560 B CN 105261560B
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- 238000003672 processing method Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 99
- 230000008569 process Effects 0.000 claims abstract description 92
- 230000011218 segmentation Effects 0.000 claims abstract description 89
- 238000012545 processing Methods 0.000 claims abstract description 59
- 239000010410 layer Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 48
- 239000002346 layers by function Substances 0.000 claims abstract description 47
- 230000004048 modification Effects 0.000 claims abstract description 45
- 238000012986 modification Methods 0.000 claims abstract description 45
- 230000035699 permeability Effects 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims description 18
- 208000037656 Respiratory Sounds Diseases 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 abstract description 17
- 239000013039 cover film Substances 0.000 abstract description 6
- 239000012212 insulator Substances 0.000 abstract description 6
- 230000002745 absorbent Effects 0.000 abstract description 4
- 239000002250 absorbent Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 63
- 239000004065 semiconductor Substances 0.000 description 62
- 230000007246 mechanism Effects 0.000 description 53
- 230000014759 maintenance of location Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910001651 emery Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910020177 SiOF Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides the processing method of chip, and the chip of the functional layers such as low dielectric constant insulator cover film (Low-k film) can be laminated with along the front that the segmentation preset lines for dividing device are reliably segmented in substrate.The a plurality of segmentation preset lines that the functional layer of chip being layered on the front of substrate is formed clathrate divide, device is formed in the multiple regions that segmentation preset lines a plurality of by this divide, the processing method of the chip includes: laser processing groove formation process, has the laser beam of absorbent wavelength for functional layer along the two sides irradiation in width direction center to segmentation preset lines and forms at least 2 laser processing grooves to cut off functional layer along segmentation preset lines；And layer formation process is modified, and the laser beam that there is the wavelength of permeability for substrate along preset lines irradiation is divided from the back side of chip, the modification layer in the inside of substrate along segmentation preset lines formation as break origins.
Description
Technical field
The present invention relates to the processing methods of chip, are formed with device to by the positive functional layer for being laminated in substrate
Chip is split along a plurality of segmentation preset lines divided to device.
Background technique
As known to those skilled in the art, following semiconductor die is formed in semiconductor devices manufacturing process
Piece: multiple IC, LSI are being formed rectangularly and being laminated with the functional layer of insulating film and functional membrane on the front of the substrates such as silicon
Equal devices.For the semiconductor wafer formed in this way, above-mentioned device is divided preset lines and divides, by pre- along the segmentation
Alignment is split to produce each semiconductor devices.
Recently, in order to improve the processing capacities of the semiconductor devices such as IC, LSI, the practical semiconductor wafer such as under type:
On the front of the substrates such as silicon by be laminated with by the inorganic matters systems such as SiOF, BSG (SiOB) film or as polyimides system,
The low dielectric constant insulator cover film (Low-k film) that the film of the organic system of the polymer film of Parylene system etc. is constituted
Functional layer forms semiconductor devices.
Usually the segmentation along such semiconductor wafer is carried out by the cutting apparatus of referred to as cutting machine (dicer)
Preset lines and the segmentation carried out.The cutting apparatus has: chuck table, keeps the semiconductor wafer as machined object；
Cutting mechanism is used to cut the semiconductor wafer for being held in the chuck table；And mobile mechanism, make chuck table
It is relatively moved with cutting mechanism.Cutting mechanism includes high-speed rotating live spindle and the cutting tool for being installed on the main shaft.
Cutting tool is made of the cricoid cutting edge of discoid pedestal and the side peripheral part for being installed on the pedestal, and cutting edge is
It by such as partial size is that 3 μm or so of diamond abrasive grain is fixed and to be formed by electroforming.
But above-mentioned Low-k film is difficult to cut by cutting tool.That is, there are following problems: due to Low-k film
Highly brittle as mica, so if being cut by cutting tool along segmentation preset lines, then Low-k film can be shelled
From the removing reaches device, and fatal damage can be caused to device.
On the other hand, in recent years, the method being split as the machined object to plates such as semiconductor wafers, is also attempted
Following laser processing: using the pulse laser light of the wavelength for machined object with permeability, make focal point
It is directed at the inside in the region to be divided and irradiated with pulse laser light.Using the laser processing dividing method from be processed
Focal point is positioned at pulse that is internal and irradiating the infrared light region for having permeability for machined object by one surface side of object
Laser beam is formed continuously modification layer along segmentation preset lines in the inside of machined object, by along due to forming the modification layer
The segmentation preset lines of strength reduction apply external force, and divide machined object (for example, referring to patent document 1).
But even if being segmented in front using above-mentioned laser processing is laminated with low dielectric constant insulator cover film
The chip of (Low-k film), can not be along the segmentation reliable Ground Split of preset lines.That is, even if making focal point from a surface side of chip
Alignment is internal and irradiates the pulse laser light for the infrared light region for having permeability for chip, thus on the inside edge of chip
Divide edge segmentation preset lines after preset lines form modification layer and apply external force, low dielectric constant insulator cover film can not be made
Functional layers such as (Low-k films) are reliably broken.In addition, even if predetermined thread breakage is divided on chip edge, there is also functional layer removing
The problem of quality decline of device after making each segmentation.
In order to solve the problem above-mentioned, proposes following technology: having along segmentation preset lines irradiation for functional layer and absorb
Property wavelength laser beam, carry out ablation and form laser processing groove to removing functional layer, hereafter, from the back of substrate
The focal point of the laser beam of the wavelength for substrate with permeability is positioned inside corresponding with segmentation preset lines by surface side
And be irradiated, so that modification layer is formed along segmentation preset lines in the inside of substrate, by along strong because forming the modification layer
Reduced segmentation preset lines are spent to apply external force and divide chip (for example, referring to patent document 2).
Patent document 1: No. 3408805 bulletins of Japanese Patent Publication No.
Patent document 1: Japanese Unexamined Patent Publication 2012-89709 bulletin
Summary of the invention
However, crackle can be to avoid as removal function if modifying layer in internal formed corresponding with segmentation preset lines
Layer and the mode of laser processing groove formed are from modification layer growth, if be divided into chip respectively and applying external force to chip
A device, then there are the following problems: chip can be divided from the position that segmentation preset lines deviate, and be made under the quality of device
Drop.
The present invention has been made in view of the above-described circumstances, and major technique project is to provide a kind of processing side of chip
Method, the chip edge that the functional layers such as low dielectric constant insulator cover film (Low-k film) can be laminated with to the front in substrate are drawn
The segmentation preset lines of device are divided reliably to be split.
In order to solve above-mentioned main technical task, according to the present invention, a kind of processing method of chip, the chip are provided
Be following chip: a plurality of segmentation preset lines that the functional layer being layered on the front of substrate is formed clathrate divide, should
Chip is formed with device in the multiple regions that segmentation preset lines a plurality of by this divide, which is characterized in that the chip adds
Work method includes:
Laser processing groove formation process has functional layer along the two sides irradiation in width direction center segmentation preset lines
The laser beam of absorbent wavelength and form at least 2 laser processing grooves, thus along segmentation preset lines cut off functional layer；
And
Layer formation process is modified, irradiates the wave that there is permeability for substrate along segmentation preset lines from the back side of chip
Long laser beam, the modification layer in the inside of substrate along segmentation preset lines formation as break origins.
Modification layer formation process is stated on the implementation and implements following process: wafer supporting process later, in the substrate of chip
The back side on paste dicing tape, and pass through the peripheral part that cricoid frame supports dicing tape；And segmentation process, via dicing tape
External force is applied to which chip is divided into each device to chip.
In addition, implement following process: guard block adhering processes, state before modification layer formation process on the implementation or
After implementation, guard block is pasted on the front of the functional layer of chip；Back side grinding process is pasted implementing the guard block
After process, the back side of the substrate of chip is ground and is formed as defined thickness, and to modify layer as being broken
Chip is divided into each device along segmentation preset lines by point；And wafer supporting process, it is glued on the back side of the substrate of chip
It pastes dicing tape and supports the peripheral part of dicing tape by cricoid frame, and will be pasted on the front of functional layer of chip
Guard block removing.
Dividing method based on chip of the invention includes: laser processing groove formation process, to segmentation preset lines along width
The two sides irradiation in degree direction center has the laser beam of absorbent wavelength for functional layer and forms at least 2 laser processings
Slot, to cut off functional layer along segmentation preset lines；And modification layer formation process, it is predetermined along segmentation from the back side of chip
Line irradiation has substrate the laser beam of the wavelength of permeability, is formed along segmentation preset lines as fracture in the inside of substrate
The modification layer of starting point can produce if foring modification layer in modification layer formation process on the substrate of chip from modification layer
Raw crackle, but the crackle is grown up between 2 laser processing grooves being formed cutting off functional layer, pre- from segmentation
Do not grow up then in the region that alignment deviates.Therefore, and applying external force to chip by chip along being formed with strength reduction
When the segmentation preset lines of modification layer are divided into each device, the crackle generated from modification layer is further grown up, but since this splits
Line is grown up between at least 2 laser processing grooves for being formed cutting off functional layer, what is deviateed from segmentation preset lines
Do not grow up in region, therefore device will not be reached, therefore the quality of the device along segmentation preset lines segmentation will not decline.
Detailed description of the invention
Fig. 1 is the solid of the processing method for being shown as chip through the invention and the semiconductor wafer for the chip processed
The enlarged cross-sectional view of figure and major part.
Fig. 2 is the laser processing device of the laser processing groove formation process in the processing method of chip for carrying out the present invention
The major part perspective view set.
Fig. 3 is the explanatory diagram of the laser processing groove formation process in the processing method of chip of the invention.
Fig. 4 is the laser processing device of the modification layer formation process in the processing method of chip for carrying out the present invention
Major part perspective view.
Fig. 5 is the explanatory diagram of the modification layer formation process in the processing method of chip of the invention.
Fig. 6 is the explanatory diagram of the wafer supporting process in the processing method of chip of the invention.
Fig. 7 is the perspective view with expanding unit of the segmentation process in the processing method of chip for carrying out the present invention.
Fig. 8 is the explanatory diagram of the segmentation process in the processing method of chip of the invention.
Fig. 9 is the explanatory diagram of the pickup process in the processing method of chip of the invention.
Figure 10 is the explanatory diagram of the guard block adhering processes in the processing method of chip of the invention.
Figure 11 is the explanatory diagram of the back side grinding process in the processing method of chip of the invention.
Figure 12 is the explanation for showing the other embodiments of the wafer supporting process in the processing method of chip of the invention
Figure.
Label declaration
2: semiconductor wafer；20: substrate；21: functional layer；22: device；23: segmentation preset lines；3: implementing laser processing groove
The laser processing device of formation process；30: implementing the laser processing device of modification layer formation process；31: chuck table；32:
Laser light irradiation mechanism；322: condenser；4: band expanding unit；41: frame holding mechanism；42: band extension mechanism；43: picking up
Take collet；5: protection band；6: grinding attachment；61: chuck table；62: grinding mechanism；66: emery wheel；F: cricoid frame；T:
Dicing tape.
Specific embodiment
In the following, being illustrated in more details referring to processing method of the attached drawing to chip of the invention.
Fig. 1 (a) and (b) in show the processing method of chip through the invention and the semiconductor wafer processed
Perspective view and major part enlarged cross-sectional view.(a) of Fig. 1 and (b) shown in semiconductor wafer 2, with a thickness of 600
μm the positive 20a of substrates 20 such as silicon on, by be laminated with insulating film and formed circuit functional membrane functional layer 21 and matrix
Shape it is formed with the devices such as multiple IC, LSI 22.Also, the segmentation preset lines 23 that each device 22 is formed clathrate divide.Separately
Outside, in the illustrated embodiment, the insulating film for forming functional layer 21 is by low dielectric constant insulator cover film (Low-k film)
Manufactured, which is by as SiO2The nothings such as film or SiOF, BSG (SiOB)
What the film of the organic system of the polymer film of the film of machine object system or polyimides system, Parylene system etc. was constituted, thickness
It is set as 10 μm.
In order to which above-mentioned semiconductor wafer 2 is divided into each device along segmentation preset lines 23, firstly, implementing laser processing
Slot formation process has absorbent wave for functional layer 21 along the two sides irradiation in width direction center to segmentation preset lines 23
Long laser beam and form at least 2 laser processing grooves, thus along segmentation preset lines 23 cut off functional layer 21.Using in Fig. 2
The laser processing device 3 shown implements the laser processing groove formation process.Laser processing device 3 shown in Figure 2 has: card
Disk workbench 31 keeps machined object；Laser light irradiation mechanism 32, to be held in the chuck table 31 be processed
Object irradiates laser beam；And photographic unit 33, the machined object for being held in chuck table 31 is shot.Chuck work
Make platform 31 be configured to machined object carry out attracting holding, and by processing feed mechanism (not shown) make chuck table 31 to
Processing direction of feed shown in arrow X is mobile in Fig. 2, and by index feed mechanism (not shown) make chuck table 31 to
Index feed direction shown in arrow Y is mobile in Fig. 2.
Above-mentioned laser light irradiation mechanism 32 includes the cabinet 321 of the cylindrical shape of substantial horizontal arrangement.In cabinet 321
It is inside equipped with pulsed laser light line oscillator (not shown) or has the pulse laser light oscillation of repetition rate set mechanism
Mechanism.It is equipped in the terminal part of above-mentioned cabinet 321 for the pulsed laser light vibrated from pulse laser light oscillating mechanism
The condenser 322 of line progress optically focused.In addition, laser light irradiation mechanism 32 has focal point position adjusting mechanism (not shown),
Its focal point position for being used to adjust the pulse laser light by 322 optically focused of condenser.
In the illustrated embodiment, it is mounted on the terminal part for constituting the cabinet 321 of above-mentioned laser light irradiation mechanism 32
The common capturing element (CCD) that is shot except through visible light of photographic unit 33 outside, further includes: infrared illumination machine
Structure irradiates infrared ray to machined object；Optical system captures the infrared ray irradiated by the infrared illumination mechanism；
And capturing element (infrared C CD) etc., electronic signal corresponding with the infrared ray captured by the optical system is exported, it should
The picture signal taken is sent to control mechanism (not shown) by photographic unit 33.
Laser processing groove formation process is illustrated referring to Fig. 2 and Fig. 3, in the laser processing groove formation process, is made
Dividing preset lines 23 with 3 pairs of above-mentioned laser processing device has suction for functional layer 21 along the two sides irradiation in width direction center
Receive property wavelength laser beam and form at least 2 laser processing grooves, thus along segmentation preset lines 23 cut off functional layer 21.
Firstly, the back side side 20b for the substrate 20 for constituting semiconductor wafer 2 is placed in above-mentioned laser processing shown in Fig. 2
On the chuck table 31 of device 3.Also, semiconductor wafer 2 is held in card and movement by making attracting mechanism (not shown)
On disk workbench 31 (chip holding process).Therefore, for the semiconductor wafer 2 being held on chuck table 31, function
The positive 21a of ergosphere 21 is upside.In this way, passing through to the chuck table 31 of the progress attracting holding of semiconductor wafer 2 not shown
Processing feed mechanism be located in the underface of photographic unit 33.
If chuck table 31 is located in the underface of photographic unit 33, by photographic unit 33 and not shown
The alignment operation that is detected the machining area to be laser machined that executes to semiconductor wafer 2 of control mechanism.That is,
The image procossings such as photographic unit 33 and control mechanism execution pattern (not shown) matching, to realize laser light irradiation position
Alignment (alignment process), the image procossings such as described pattern match are used to be formed in the prescribed direction of semiconductor wafer 2
Segmentation preset lines 23 and the laser light irradiation mechanism 32 along the segmentation preset lines 23 irradiation laser beam condenser 322
Contraposition.In addition, for the segmentation preset lines 23 being formed on semiconductor wafer 2 on the direction vertical with above-mentioned prescribed direction,
Similarly execute the alignment of laser light irradiation position.
If implementing above-mentioned alignment process, as shown in figure 3, chuck table 31 is made to be moved to irradiation laser beam
Laser light irradiation mechanism 32 condenser 322 where laser light irradiation region, as shown in (a) of Fig. 3, to be formed in
One end (in (a) of Fig. 3 be left end) of the defined segmentation preset lines 23 of semiconductor wafer 2 be located at condenser 322 just under
The mode of side positions.At this point, being positioned such that from amesiality 5~10 μm of the position in width direction center of segmentation preset lines 23
Setting in the underface of condenser 322.Next, swashing on one side from 322 radiation pulses of condenser of laser light irradiation mechanism 32
Light light moves direction shown in arrow X1 of the chuck table 31 in (a) of Fig. 3 with defined processing feed speed
It is dynamic.Also, as shown in (b) of Fig. 3, if the other end (being right end in (b) of Fig. 3) of segmentation preset lines 23 reaches condenser
322 following position directly, the then movement of stop pulse laser beam irradiated and stop chuck table 31.Add in the laser
In work slot formation process, it is directed at the focal point P of pulse laser light near the front of segmentation preset lines 23.
Next, keeping chuck table 31 10~20 μm mobile to the direction (index feed direction) vertical with paper.Knot
Fruit, from segmentation preset lines 23 width direction center be biased to 5~10 μm of the other side position be located in condenser 322 just under
Side.Also, make chuck table on one side from the 322 irradiated with pulse laser light of condenser of laser light irradiation mechanism 32 on one side
31 in (b) of Fig. 3 direction shown in arrow X2 it is mobile with defined processing feed speed, if reached shown in (a) of Fig. 3
Position, the then movement of stop pulse laser beam irradiated and stop chuck table 31.
It is formed on semiconductor wafer 2 as shown in (c) of Fig. 3 by the laser processing groove formation process for implementing above-mentioned
2 laser processing grooves 24,24, this 2 laser processing groove 24,24 are deeper than the thickness of functional layer 21, i.e. arrival substrate 20.As a result,
Functional layer 21 is cut off by 2 laser processing grooves 24,24.Also, along the whole segmentation preset lines 23 for being formed in semiconductor wafer 2
Implement above-mentioned laser processing groove formation process.
In addition, above-mentioned laser processing groove formation process for example carries out under processing conditions below.
If implementing above-mentioned laser processing groove formation process, implement to modify layer formation process, from semiconductor wafer 2
Substrate 20 back side 20b lateral edge segmentation preset lines 23 irradiation for semiconductor wafer 2 substrate 20 have permeability wave
Long laser beam, the modification layer in the inside of substrate 20 along the segmentation formation of preset lines 23 as break origins.The modification layer
Formation process is implemented using laser processing device 30 shown in Fig. 4.In addition, showing in laser processing device 30 and above-mentioned Fig. 2
Laser processing device 3 out is constituted in the same manner, is marked same label for the same part and is omitted detailed description.Reference
Fig. 4 and Fig. 5 is illustrated the modification layer formation process for using laser processing device 30 and implementing.
Firstly, making the front for the functional layer 21 for constituting the semiconductor wafer 2 for implementing above-mentioned laser processing groove formation process
The side 21a is placed on the chuck table 31 of laser processing device 30 shown in Fig. 4, and by making attracting mechanism (not shown)
It acts and the absorption of semiconductor wafer 2 is held on chuck table 31.Therefore, for be held on chuck table 31 half
For conductor chip 2, the back side 20b of substrate 20 is upside.The chuck table 31 of attracting holding semiconductor wafer 2 in this way is logical
It crosses mobile mechanism (not shown) and is located in the underface of photographic unit 33.
If chuck table 31 is located in the underface of photographic unit 33, by photographic unit 33 and not shown
The alignment operation that is detected the machining area to be laser machined that executes to semiconductor wafer 2 of control mechanism.It should
The alignment operation being aligned in operation and laser processing groove formation process is substantially the same.In addition, in the alignment operation, though
The formation of right semiconductor wafer 2 has the positive 21a of the functional layer 21 of segmentation preset lines 23 to be located at downside, but due to photographic unit
33 have as described above by infrared illumination mechanism, capture the optical system of infrared ray and export electricity corresponding with infrared ray
The photographic unit of the compositions such as the capturing element (infrared C CD) of subsignal, therefore can be through back side 2b to segmentation preset lines 23
It is shot.
If as described above, detecting that the segmentation on the semiconductor wafer 2 for being formed in and being held in chuck table 31 is pre-
Alignment 23, and carried out the alignment of laser light irradiation position, then as shown in (a) of Fig. 5, chuck table 31 is moved to photograph
The laser light irradiation region where the condenser 322 of the laser light irradiation mechanism 32 of laser beam is penetrated, by defined segmentation
One end (being left end in (a) of Fig. 5) of preset lines 23 is positioned at the underface of the condenser 322 of laser light irradiation mechanism 32.
At this point, being positioned in such a way that the width direction central location for dividing preset lines 23 is located at the underface of condenser 322.Also, one
While from condenser 322 irradiation for substrate 20 have permeability wavelength pulse laser light make on one side chuck table 31 to
Direction shown in arrow X1 is mobile with defined feed speed in (a) of Fig. 5.Also, as shown in (b) of Fig. 5, if condenser
322 irradiation position reaches the position of the other end of segmentation preset lines 23, the then irradiation and stopping of stop pulse laser beam
The movement of chuck table 31.In the modification layer formation process, by making the focal point P of pulse laser light be directed at semiconductor
The inside of the substrate 20 of chip 2, as shown in (b) of Fig. 5 and (c) of Fig. 5, on the inside edge of the substrate 20 of semiconductor wafer 2
Divide preset lines 23 and forms modification layer 25.If modification layer 25 is formed like this, such as shown in (c) of Fig. 5, in semiconductor wafer
26 can be cracked on 2 substrate 20 from modification layer 25, but the crackle 26 is in 2 laser processings cutting off functional layer 21 and being formed
Grow up between slot 24,24, does not grow up then in the deflected areas from segmentation preset lines 23.
Implement above-mentioned modification layer formation process along the whole segmentation preset lines 23 for being formed in semiconductor wafer 2.
Processing conditions in above-mentioned modification layer formation process is for example set as follows.
If implementing above-mentioned modification layer formation process, implement wafer supporting process, constitutes semiconductor wafer 2
The back side 20b of substrate 20 pastes dicing tape, and the peripheral part of dicing tape is supported by cricoid frame.That is, as Fig. 6 (a) with
And (b) shown in, will constitute and implement the back side 20b of substrate 20 of the semiconductor wafer 2 of above-mentioned modification layer formation process and paste
It is installed on the dicing tape T on cricoid frame F.In addition, Fig. 6 (a) and (b) shown in embodiment, show
The example for constituting the back side 20b of substrate 20 of semiconductor wafer 2 is pasted on the dicing tape T for being installed on cricoid frame F, but
Dicing tape T can also be pasted and at the same time by the peripheral part of dicing tape T in the back side 20b for constituting the substrate 20 of semiconductor wafer 2
It is installed on cricoid frame F.
If implementing above-mentioned wafer supporting process, implement segmentation process, by via dicing tape T to semiconductor die
Piece 2 applies external force, and semiconductor wafer 2 is divided into each device.Implement this using band expanding unit 4 shown in Fig. 7
Segmentation process.Band expanding unit 4 shown in Fig. 7 has: frame holding mechanism 41 keeps above-mentioned cricoid frame F；Band expands
Mechanism 42 is opened up, the dicing tape T being mounted on the cricoid frame F for being held in the frame holding mechanism 41 is extended；With
And pick up collet 43.Frame holding mechanism 41 is by cricoid frame retention feature 411 and to be disposed in the frame retention feature
Multiple fixtures 412 as fixed mechanism of 411 periphery are constituted.The upper surface of frame retention feature 411 is formed with to ring-type
The mounting surface 411a that is loaded of frame F, cricoid frame F is loaded on mounting surface 411a.Also, it is positioned in mounting surface
Cricoid frame F on 411a is fixed in frame retention feature 411 by fixture 412.The frame holding mechanism constituted in this way
41 are supported to retreat in the up-down direction by band extension mechanism 42.
Has the extension drum 421 for the inside for being disposed in above-mentioned cricoid frame retention feature 411 with extension mechanism 42.The expansion
Exhibition drum 421 has smaller than the internal diameter of cricoid frame F and ratio is pasted onto partly leading on the dicing tape T for being installed on ring-shaped frame F
The outer diameter of body chip 2 big internal diameter and outer diameter.In addition, extension drum 421 has support lug 422 in lower end.The implementation of diagram
Has the bearing that above-mentioned cricoid frame retention feature 411 can be made to retreat in the up-down direction with extension mechanism 42 in mode
Mechanism 423.The supporting device 423 is made of the multiple cylinder 423a being disposed in above-mentioned support lug 422, piston rod 423b
It is linked to the lower surface of above-mentioned cricoid frame retention feature 411.Made in this way by the supporting device 423 that multiple cylinder 423a are constituted
Cricoid frame retention feature 411 is substantially same in the mounting surface 411a as shown in (a) of Fig. 8 and the upper end of extension drum 423
The base position of one height with as shown in (b) of Fig. 8 mounting surface 411a with extension drum 423 upper end compared with specified amount position
It is moved in the up-down direction between the expanding location of lower section.
Referring to Fig. 8 to use constitute as described above with expanding unit 4 implement segmentation process be illustrated.That is, such as
Shown in (a) of Fig. 8, it will be mounted with that the cricoid frame F for being pasted with the dicing tape T of semiconductor wafer 2 is placed in and constitute frame guarantor
On the mounting surface 411a for holding the frame retention feature 411 of mechanism 41, and frame retention feature is fixed in by fixture 412
411 (frame holding processes).At this point, frame retention feature 411 is located in base position shown in (a) of Fig. 8.
If implementing above-mentioned frame keeps process, such as shown in (b) of Fig. 8, make as composition band extension mechanism 42
Supporting device 423 multiple cylinder 423a work, so that cricoid frame retention feature 411 is dropped to expanding location.Therefore, by
Also decline in the cricoid frame F on the mounting surface 411a for being fixed on frame retention feature 411, therefore as shown in (b) of Fig. 8,
The dicing tape T for being installed on cricoid frame F is contacted with the upper edge of extension drum 421 and is extended (band extension process).As a result, right
The semiconductor wafer 2 for being pasted on dicing tape T radially acts on traction force.If radial on semiconductor wafer 2 like this
Ground acts on traction force, then due to 25 strength reduction of modification layer formed along segmentation preset lines 23, constitutes semiconductor wafer 2
Substrate 20 is that break origins are divided into each device 22 along the fracture of segmentation preset lines 23 with the modification layer 25 of strength reduction.?
In the segmentation process, the crackle 26 generated in above-mentioned modification layer formation process from modification layer 25 is further grown up, but due to this
Crackle 26 is grown up between 2 laser processing grooves 24,24 for being formed cutting off functional layer 21, from segmentation preset lines
Do not grow up in 23 regions deviateed, therefore the crackle 26 will not reach device 22, therefore will not make to be divided along segmentation preset lines 23
The quality decline of the device 22 cut.
If implementing above-mentioned segmentation process, as shown in figure 9, make to pick up collet 43 and act to carry out absorbing elements 22, it will
It is removed and picks up from dicing tape T.In addition, in pickup process, since the gap S between each device 22 is widened, energy
It is enough not to be easily picked up in contact with adjacent device 22.
Next, to by the semiconductor wafer 2 for implementing above-mentioned modification layer formation process be divided into each device other
Embodiment is illustrated.
Firstly, implementing guard block adhering processes, the semiconductor wafer 2 for implementing above-mentioned modification layer formation process is being constituted
Functional layer 21 positive 21a on paste guard block.That is, as shown in Figure 10, constituting semiconductor wafer 2 to protect to be formed in
Functional layer 21 on device 22, constitute semiconductor wafer 2 functional layer 21 positive 21a on paste as guard block
Protection band 5.In the illustrated embodiment, as the protection band 5, what is be made of the polyvinyl chloride (PVC) with a thickness of 100 μm
Paste coated with the acrylic resin with a thickness of 5 μm or so on the surface of sheet substrate.Alternatively, it is also possible to what is stated on the implementation
Implement guard block adhering processes before modifying layer formation process.
Next, implementing back side grinding process, the back side 20b of the substrate 20 of semiconductor wafer 2 is ground and is formed
For defined thickness, and semiconductor wafer 2 is divided into each device along segmentation preset lines 23 to modify layer as break origins
Part.Implement the back side grinding process using grinding attachment 6 shown in (a) of Figure 11.Grinding attachment 6 shown in (a) of Figure 11
Have as the chuck table 61 for the holding mechanism for keeping machined object and to being held in being added for the chuck table 61
The grinding mechanism 62 that work object is ground.Chuck table 61 is configured to machined object attracting holding in upper surface, and passes through
Rotary drive mechanism (not shown) direction shown in arrow A in (a) of Figure 11 rotates.Grinding mechanism 62 has: main shaft housing
63；Live spindle 64, the rotary drive mechanism (not shown) by being supported on the main shaft housing 63 in a way freely spinning way drive
It moves the live spindle 64 and makes its rotation；Mounting base 65 is installed on the lower end of the live spindle 64；And emery wheel 66, peace
Lower surface loaded on the mounting base 65.The emery wheel 66 is installed on the following table of the pedestal 67 by circular pedestal 67 and annularly
The grinding tool 68 in face is constituted, and pedestal 67 is installed on the lower surface of mounting base 65 by fastening bolt 69.
Implement above-mentioned back side grinding process to use above-mentioned grinding attachment 6, as shown in (a) of Figure 11, will be pasted onto
5 side of protection band for constituting the positive 21a of the functional layer 21 of semiconductor wafer 2 is placed in the upper surface of chuck table 61 and (keeps
Face).Also, by attracting mechanism (not shown), semiconductor wafer 2 is held in chuck table 61 via the absorption of protection band 5
Upper (chip holding process).Therefore, for the semiconductor wafer 2 being held on chuck table 61, the back side of substrate 20
20b is upside.If like this by semiconductor wafer 2 via 5 attracting holding of protection band on chuck table 61, make on one side
The direction shown in arrow A in (a) of Figure 11 of chuck table 61 makes the mill of grinding mechanism 62 with such as 300rpm rotation on one side
The direction shown in arrow B in (a) of Figure 11 of wheel 66 is rotated with such as 6000rpm, and makes grinding tool 68 as shown in (b) of Figure 11
Contacted with the back side 20b of the substrate 20 of the composition semiconductor wafer 2 as machined surface, and by emery wheel 66 as shown by arrow C with
Such as 1 μm/second grinding and feeding speed (the vertical direction of retaining surface relative to chuck table 61) grinding and feeding downwards
Defined amount.As a result, the back side 20b to substrate 20 is ground, semiconductor wafer 2 is formed as defined thickness (such as 100 μ
M), and along forming modification layer 25 and the segmentation preset lines 23 of strength reduction are divided into each device 22.It is ground at the back side
It cuts in process, although the crackle 26 generated in above-mentioned modification layer formation process from modification layer 25 is further grown up, by
Grow up between 2 laser processing grooves 24,24 for being formed in the crackle 26 cutting off functional layer 21, pre- from segmentation
Do not grow up in the region that alignment 23 deviates, therefore device 22 will not be reached, therefore will not make divided along segmentation preset lines 23
The quality of device 22 reduces.
If implementing above-mentioned back side grinding process, implement wafer supporting process, in the base for constituting semiconductor wafer 2
The back side 20b of plate 20 pastes dicing tape and supports the peripheral part of dicing tape by cricoid frame, and will be pasted onto composition half
The protection band 5 as guard block on the positive 21a of the functional layer 21 of conductor chip 2 is removed.That is, as shown in figure 12, by structure
Pasted at the back side 20b for the substrate 20 for implementing the semiconductor wafer 2 after above-mentioned modification layer formation process be installed on it is cricoid
On the dicing tape T of frame F.Then, removing is pasted on the protection band 5 of the positive 21a of functional layer 21.
Implement wafer supporting process if as discussed above, then it will be along the segmentation divided device 22 of preset lines 23 from scribing
It is removed with T and is delivered to the pickup process being picked up.It is as shown in Figure 9 to be able to use band expanding unit 4 shown in above-mentioned Fig. 7
Implement the pickup process like that.
Claims (3)
1. a kind of processing method of chip, the chip are following chips: being layered in the functional layer on the front of substrate by shape
A plurality of segmentation preset lines as clathrate divide, and are formed in the multiple regions that segmentation preset lines a plurality of by this divide
Device, which is characterized in that
The processing method of the chip includes:
Laser processing groove formation process has functional layer along the two sides irradiation in width direction center segmentation preset lines and inhales
Receive property wavelength laser beam and form at least 2 laser processing grooves, thus along segmentation preset lines cut off functional layer；And
Layer formation process is modified, irradiates the wavelength that there is permeability for substrate along segmentation preset lines from the back side of chip
Laser beam forms the modification layer as break origins along segmentation preset lines in the inside of substrate, to be formed from modification layer
Grow up between 2 laser processing grooves being formed and from the region that segmentation preset lines deviate cutting off functional layer
The crackle that do not grow up.
2. the processing method of chip according to claim 1, wherein in the processing method of the chip, implementing the modification
Implement following process after layer formation process:
Wafer supporting process pastes dicing tape on the back side of the substrate of chip, and supports dicing tape by cricoid frame
Peripheral part；And
Segmentation process applies external force to chip via dicing tape to which chip is divided into each device.
3. the processing method of chip according to claim 1, wherein in the processing method of the chip, implement following work
Sequence:
Guard block adhering processes, before implement the modification layer formation process or after implementing, in the functional layer of chip
Guard block is pasted on front；
Back side grinding process is ground and shape the back side of the substrate of chip after implementing the guard block adhering processes
Chip is divided into each device along segmentation preset lines as defined thickness, and to modify layer as break origins；With
And
Wafer supporting process pastes dicing tape on the back side of the substrate of chip and supports the outer of dicing tape by cricoid frame
Circumference, and will be pasted onto chip functional layer front on guard block removing.
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| JP2014140432A JP6305853B2 (en) | 2014-07-08 | 2014-07-08 | Wafer processing method |
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| JP6608713B2 (en) * | 2016-01-19 | 2019-11-20 | 株式会社ディスコ | Wafer processing method |
| JP6721420B2 (en) * | 2016-06-02 | 2020-07-15 | 株式会社ディスコ | Leakage light detection method |
| JP6731793B2 (en) * | 2016-06-08 | 2020-07-29 | 株式会社ディスコ | Wafer processing system |
| JP6749727B2 (en) * | 2016-10-14 | 2020-09-02 | 株式会社ディスコ | Inspection wafer and method of using inspection wafer |
| JP6760820B2 (en) * | 2016-11-01 | 2020-09-23 | 株式会社ディスコ | Scratch detection method |
| KR102399356B1 (en) * | 2017-03-10 | 2022-05-19 | 삼성전자주식회사 | Substrate, method of sawing substrate, and semiconductor device |
| JP6821261B2 (en) * | 2017-04-21 | 2021-01-27 | 株式会社ディスコ | Processing method of work piece |
| CN108381042A (en) * | 2018-03-23 | 2018-08-10 | 伊欧激光科技（苏州）有限公司 | Chip processing system and wafer processing method |
| JP7027234B2 (en) * | 2018-04-16 | 2022-03-01 | 株式会社ディスコ | Wafer processing method |
| JP7139037B2 (en) * | 2018-05-11 | 2022-09-20 | 株式会社ディスコ | Chip manufacturing method |
| JP7154860B2 (en) * | 2018-07-31 | 2022-10-18 | 株式会社ディスコ | Wafer processing method |
| WO2020129734A1 (en) * | 2018-12-21 | 2020-06-25 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| CN113195153B (en) * | 2018-12-21 | 2023-04-07 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| CN111618439A (en) * | 2019-02-28 | 2020-09-04 | 三星钻石工业株式会社 | Method and apparatus for dicing semiconductor substrate, and method and apparatus for removing coating film |
| JP2023108398A (en) * | 2022-01-25 | 2023-08-04 | 浜松ホトニクス株式会社 | Laser processing method |
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| CN101345212A (en) * | 2007-07-13 | 2009-01-14 | 株式会社迪思科 | Wafer dividing method |
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| KR102272434B1 (en) | 2021-07-01 |
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