TWI761558B - Wafer processing method and auxiliary device for wafer processing - Google Patents

Wafer processing method and auxiliary device for wafer processing Download PDF

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TWI761558B
TWI761558B TW107125156A TW107125156A TWI761558B TW I761558 B TWI761558 B TW I761558B TW 107125156 A TW107125156 A TW 107125156A TW 107125156 A TW107125156 A TW 107125156A TW I761558 B TWI761558 B TW I761558B
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wafer
opening
auxiliary device
frame
chuck table
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TW201909336A (en
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羅伯特 盧扎尼拉
得文 馬汀
羅伯 巴爾加斯
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Abstract

[課題] 本發明的課題為，提供一種不傷及元件的正面且不損傷由細微的構造體形成的元件，且能夠從晶圓的背面將雷射光線的聚光點定位在晶圓的內部並形成改質層的晶圓加工方法，以及一種用於晶圓加工的輔助器具。[解決手段] 根據本發明提供一種晶圓加工方法，該晶圓加工方法至少由下述步驟所構成：輔助器具準備步驟，準備輔助器具，該輔助器具具備：第一開口部，與晶圓的外徑大致同形狀並容納晶圓；支撐部，形成於該第一開口部的底部並避免和該元件區域的接觸，並支撐該外周剩餘區域；以及第二開口部，形成於該第一開口部的底部的該支撐部的內側；框架支撐步驟，將晶圓的背面黏貼至切割膠帶，並以具有容納晶圓的開口的框架在容納晶圓的狀態下黏貼至切割膠帶，以該框架支撐該晶圓；卡盤台載置步驟，在具備吸引保持手段的卡盤台載置該輔助器具，並在該輔助器具的第一開口部容納晶圓的正面側，且在該卡盤台使吸引力產生作用；改質層形成步驟，將對該晶圓具有穿透性的波長的雷射光線的聚光點透過該切割膠帶從該晶圓的背面定位於內部並照射，且沿著分割預定線形成改質層；以及分割步驟，透過切割膠帶對在框架保持的晶圓施加外力，沿著該分割預定線將晶圓分割為各個元件。[Problem] The subject of the present invention is to provide a device formed of a fine structure without damaging the front surface of the device and without damaging the device, and which can position the condensing point of the laser beam inside the wafer from the back surface of the wafer A wafer processing method for forming a modified layer, and an auxiliary device for wafer processing. [Solution] According to the present invention, there is provided a wafer processing method comprising at least the following steps: a step of preparing an auxiliary device, and preparing an auxiliary device, the auxiliary device having: a first opening; The outer diameter is approximately the same shape and accommodates the wafer; a support portion is formed at the bottom of the first opening to avoid contact with the component area and support the remaining area of the outer periphery; and a second opening is formed at the first opening The inner side of the support part at the bottom of the part; the frame supporting step, the backside of the wafer is pasted to the dicing tape, and the frame with the opening for accommodating the wafer is pasted to the dicing tape in the state of accommodating the wafer, and the frame is supported the wafer; the chuck table placing step of placing the auxiliary tool on a chuck table provided with suction and holding means, accommodating the front side of the wafer in the first opening of the auxiliary tool, and placing the auxiliary tool on the chuck table Attraction works; in the step of forming the modified layer, the condensing point of the laser light of the wavelength that has penetrability to the wafer is positioned and irradiated from the back of the wafer through the dicing tape, and is divided along the A modified layer is formed on a predetermined line; and in a dividing step, an external force is applied to the wafer held by the frame through a dicing tape, and the wafer is divided into individual elements along the dividing line.

Description

晶圓加工方法以及用於晶圓加工的輔助器具Wafer processing method and auxiliary device for wafer processing

本發明係關於一種不傷及在晶圓的正面側形成的元件而進行加工的晶圓加工方法，以及一種用於該晶圓加工的輔助器具。The present invention relates to a wafer processing method for processing without damaging components formed on the front side of the wafer, and an auxiliary device for the wafer processing.

由分割預定線劃分並在表面形成IC、LSI、MEMS（Micro Electro Mechanical Systems，微機電系統）、LED等元件的晶圓，是藉由切割裝置、雷射加工裝置分割為各個元件，並被利用於行動電話、電腦等的電子設備。Wafers with IC, LSI, MEMS (Micro Electro Mechanical Systems, Micro Electro Mechanical Systems), LED and other components formed on the surface divided by the planned dividing lines are divided into individual components by dicing equipment and laser processing equipment, and are used Electronic devices such as mobile phones and computers.

雷射加工裝置大致由下述構成：卡盤台，吸引保持工件；雷射光線照射手段，照射對在該卡盤台保持的工件具有穿透性的波長的雷射光線；攝像手段，檢測應加工區域；以及加工進給手段，相對於該卡盤台與該雷射光線照射手段進行加工進給；並能夠將聚光點定位在分割預定線的內部並沿著分割預定線形成改質層，將晶圓分割為各個元件（例如參閱專利文獻1）。The laser processing apparatus is roughly composed of the following: a chuck table, which attracts and holds the workpiece; a laser light irradiation means, which irradiates a laser light of a wavelength that is penetrating to the workpiece held on the chuck table; a processing area; and processing feeding means for processing and feeding with respect to the chuck table and the laser light irradiation means; and capable of positioning the light-converging point inside the planned dividing line and forming a modified layer along the planned dividing line , the wafer is divided into individual elements (for example, see Patent Document 1).

根據上述專利文獻1記載的技術，能沿著晶圓的分割預定線形成改質層，將該晶圓分割為各個元件。但是，在晶圓的正面側，層積有多個機能層，存在難以從形成分割預定線的晶圓的正面側將雷射光線的聚光點定位在內部的情況。此種情況，成為從晶圓的背面側將雷射光線的聚光點定位在分割預定線的內部並在晶圓的內部形成改質層。 [習知技術文獻] [專利文獻]According to the technique described in the above-mentioned Patent Document 1, the modified layer can be formed along the line to be divided into the wafer, and the wafer can be divided into individual elements. However, a plurality of functional layers are stacked on the front side of the wafer, and it may be difficult to locate the condensing point of the laser beam inside from the front side of the wafer where the planned dividing line is formed. In this case, from the back surface side of the wafer, the condensing point of the laser beam is positioned inside the planned dividing line, and the modified layer is formed inside the wafer. [Prior Art Documents] [Patent Documents]

[專利文獻1]日本特許3408805號公報[Patent Document 1] Japanese Patent No. 3408805

如同上述，在難以從晶圓的正面將雷射光線的聚光點定位在內部的情況，藉由從晶圓的背面側將雷射光線的聚光點定位在分割預定線的內部並在晶圓的內部形成改質層，能將晶圓分割為各個元件。但是，若直接以卡盤台吸引保持晶圓的正面側，則藉由與卡盤台的吸附卡盤的接觸恐傷及在晶圓的正面側形成的元件。另外，不傷及元件的方式，雖亦考慮在晶圓的正面側黏貼保護膠帶並在卡盤台進行保持並加工的方法，惟在晶圓的正面側黏貼保護膠帶並實施分割步驟後，從正面側剝離該保護膠帶時，構成保護膠帶的黏著層的一部份附著於元件無法取下，而在之後的步驟中會發生加工不良等，導致品質下降。進而，在MEMS晶圓中因各元件以細微的構造體所形成，因此在剝離保護膠帶時產生損傷該元件的問題。As described above, in the case where it is difficult to locate the condensing point of the laser light inside from the front side of the wafer, by positioning the condensing point of the laser light inside the planned dividing line from the back side of the wafer, and A modified layer is formed inside the circle, and the wafer can be divided into individual elements. However, if the front side of the wafer is directly sucked and held by the chuck table, the components formed on the front side of the wafer may be damaged by the contact with the suction chuck of the chuck table. In addition, as a method of not damaging the components, a method of sticking a protective tape on the front side of the wafer and holding it on the chuck table and processing it is also considered. However, after sticking the protective tape on the front side of the wafer and performing the dividing step, When the protective tape is peeled off from the front side, a part of the adhesive layer constituting the protective tape adheres to the element and cannot be removed, and processing defects and the like occur in subsequent steps, resulting in deterioration of quality. Furthermore, in the MEMS wafer, since each element is formed as a fine structure, there is a problem that the element is damaged when the protective tape is peeled off.

本發明為鑒於上述事實之發明，其主要技術課題為，提供一種不傷及元件的表面且不損傷由細微的構造體形成的元件，且能夠從晶圓的背面將雷射光線的聚光點定位在晶圓的內部並形成改質層的晶圓加工方法，以及一種用於晶圓加工的輔助器具。The present invention is an invention in view of the above-mentioned facts, and its main technical problem is to provide a device formed of a fine structure without damaging the surface of the device and without damaging the device formed by the fine structure, and which can condense the laser beam from the back surface of the wafer. A wafer processing method for positioning inside a wafer and forming a modified layer, and an auxiliary tool for wafer processing.

為解決上述主要技術課題，根據本發明，提供一種晶圓加工方法，將具備由分割預定線劃分成多個元件並形成於正面的元件區域與圍繞該元件區域的外周剩餘區域之晶圓分割為各個元件，該晶圓加工方法至少由下述步驟所構成：輔助器具準備步驟，準備輔助器具，該輔助器具具備：第一開口部，與晶圓的外徑大致同形狀並容納晶圓；支撐部，形成於該第一開口部的底部並避免和該元件區域的接觸，並支撐該外周剩餘區域；以及第二開口部，形成於該第一開口部的底部的該支撐部的內側；框架支撐步驟，將晶圓的背面黏貼至切割膠帶，並以具有容納晶圓的開口的框架在容納晶圓的狀態下黏貼至切割膠帶，以該框架支撐該晶圓；卡盤台載置步驟，在具備吸引保持手段的卡盤台載置該輔助器具，並在該輔助器具的第一開口部容納晶圓的正面側，且在該卡盤台使吸引力產生作用；改質層形成步驟，將對該晶圓具有穿透性的波長的雷射光線的聚光點透過該切割膠帶從該晶圓的背面定位於內部並照射，且沿著分割預定線形成改質層；以及分割步驟，透過切割膠帶對在框架保持的晶圓施加外力，沿著該分割預定線將晶圓分割為各個元件。In order to solve the above-mentioned main technical problem, according to the present invention, there is provided a wafer processing method that divides a wafer including a device region divided into a plurality of devices by a planned dividing line and formed on the front surface and a peripheral remaining region surrounding the device region into a wafer. For each element, the wafer processing method is constituted by at least the following steps: a step of preparing an auxiliary device for preparing an auxiliary device, the auxiliary device having: a first opening part having a shape substantially the same as the outer diameter of the wafer and accommodating the wafer; a second opening formed at the bottom of the first opening to avoid contact with the element area, and to support the remaining peripheral area; and a second opening formed on the inner side of the support at the bottom of the first opening; a frame In the supporting step, the backside of the wafer is pasted to the dicing tape, and the frame having the opening for accommodating the wafer is pasted to the dicing tape in the state of accommodating the wafer, and the wafer is supported by the frame; the chuck table placing step, The auxiliary tool is placed on a chuck table provided with suction and holding means, the front side of the wafer is accommodated in the first opening of the auxiliary tool, and the suction force acts on the chuck table; the modified layer forming step, Positioning and irradiating the light-converging point of the laser light of the wavelength having penetrability to the wafer through the dicing tape from the back of the wafer, and forming a modified layer along the predetermined dividing line; and the dividing step, An external force is applied to the wafer held by the frame through the dicing tape, and the wafer is divided into individual elements along the dividing line.

在該輔助器具準備步驟中準備的輔助器具，較佳構成為對該第一開口部的外周的表面加工為粗糙面，使該改質層形成步驟中使用的雷射光線散射。The auxiliary device prepared in the auxiliary device preparation step is preferably configured such that the outer peripheral surface of the first opening is roughened to scatter the laser light used in the modified layer forming step.

該輔助器具準備步驟中準備的輔助器具中，較佳為該第二開口部的底和該支撐部的段差設定為10μm~20μm。 In the auxiliary device prepared in the auxiliary device preparation step, it is preferable that the level difference between the bottom of the second opening portion and the support portion is set to 10 μm to 20 μm.

在該晶圓的該元件區域形成的元件為MEMS的情況，特別適合本發明。 The present invention is particularly suitable when the element formed in the element region of the wafer is a MEMS.

為解決上述主要技術課題，根據本發明提供一種輔助器具，將晶圓進行支撐，該晶圓具備由分割預定線劃分成多個元件並形成於正面的元件區域，與圍繞該元件區域的外周剩餘區域，該輔助器具具備：第一開口部，與晶圓的外形狀大致同形狀並容納晶圓；以及第二開口部，具有支撐部，該支撐部形成於該第一開口部的底，避免和該元件區域的接觸，並支撐外周剩餘區域。 In order to solve the above-mentioned main technical problem, according to the present invention, there is provided an auxiliary device for supporting a wafer having a device region divided into a plurality of devices by a line to be divided and formed on the front surface, and an outer periphery surrounding the device region remaining. area, the auxiliary device has: a first opening, which is substantially the same shape as the outer shape of the wafer and accommodates the wafer; and a second opening, which has a support portion formed at the bottom of the first opening to avoid Contact with this component area and support the remaining area of the periphery.

本發明為一種晶圓加工方法，將具備由分割預定線劃分成多個元件並形成於正面的元件區域與圍繞元件區域的外周剩餘區域之晶圓分割為各個元件，該晶圓加工方法至少由下述步驟所構成：輔助器具準備步驟，準備輔助器具，該輔助器具具備：第一開口部，與晶圓的外徑大致同形狀並容納晶圓；支撐部，形成於第一開口部的底部並避免和元件區域的接觸，並支撐外周剩餘區域；以及第二開口部，形成於第一開口部的底部的支撐部的內側；框架支撐步驟，將晶圓的背面黏貼至切割膠帶，並以具有容納晶圓的開口的框架在容納晶圓的狀態下黏貼至切割膠帶，以框架支撐晶圓；卡盤台載置步驟，在具備吸引保持手段的卡盤台載置輔助器具，並在輔助器具的第一開口部容納晶圓的正面側，且在卡盤台使吸引力產生作用；改質層形成步驟，將對晶圓具有穿透性的波長的雷射光線的聚光點透過切割膠帶從晶圓的背面定位於內部並照射，且沿著分割預定線形成改質層；以及分割步驟，透過切割膠帶對在框架保持的晶圓施加外力，沿著該分割預定線將晶圓分割為各個元件；藉此即使從晶圓的背面側照射雷射光實施加工的情況，亦能不傷及元件的正面，在晶圓的內部形成改質層。另外，因不必在晶圓的正面黏貼具備黏著層的保護膠帶等，能解決黏著層的一部份附著於元件而使品質下降，且剝離時損傷元件的問題。 The present invention relates to a wafer processing method for dividing a wafer having a component area divided into a plurality of components by a planned dividing line and formed on the front surface and a peripheral remaining area surrounding the component area into individual components, the wafer processing method at least comprising: The following steps are constituted: an auxiliary device preparation step for preparing an auxiliary device, the auxiliary device having: a first opening part having substantially the same shape as the outer diameter of the wafer and accommodating the wafer; a support part formed at the bottom of the first opening part and avoid contact with the component area, and support the remaining area of the outer periphery; and a second opening portion formed on the inner side of the support portion at the bottom of the first opening portion; the frame supporting step is to stick the backside of the wafer to the dicing tape, and use A frame having an opening for accommodating the wafer is attached to a dicing tape in a state of accommodating the wafer, and the wafer is supported by the frame; in the chuck table placing step, an auxiliary tool is placed on the chuck table provided with the suction and holding means, and the auxiliary tool is placed on the chuck table with suction and holding means. The first opening of the tool accommodates the front side of the wafer, and makes the attraction work on the chuck table; the step of forming the modified layer transmits and cuts through the condensing point of the laser light of the wavelength that is penetrating to the wafer The tape is positioned inside and irradiated from the back of the wafer, and a modified layer is formed along the line to be divided; and the dividing step is to apply an external force to the wafer held by the frame through the dicing tape, and divide the wafer along the line to be divided For each element, even if the laser light is irradiated from the back side of the wafer for processing, the modified layer can be formed inside the wafer without damaging the front side of the element. In addition, since there is no need to stick a protective tape with an adhesive layer on the front surface of the wafer, it is possible to solve the problem that a part of the adhesive layer adheres to the device, which reduces the quality and damages the device when peeled off.

藉由本發明，提供一種輔助器具，將晶圓進行支撐，該晶圓具備由分割預定線劃分成多個元件並形成於正面元件區域，與圍繞該元件區域的外周剩餘區域，該輔助器具具備：第一開口部，與晶圓的外形狀大致同形狀並容納晶圓；以及第二開口部，具有支撐部，該支撐部形成於該第一開口部的底，避免和該元件區域的接觸，並支撐外周剩餘區域。藉由對該輔助器具使用雷射加工方法，即使從晶圓的背面側照射雷射光線實施雷射加工的情況，亦能不傷及元件的正面，在晶圓的內部形成改質層。另外，因不必在晶圓的正面黏貼具備黏著層的保護膠帶等，能解決黏著層的一部份附著於元件而使品質下降，且剝離時損傷元件的問題。According to the present invention, there is provided an auxiliary device for supporting a wafer, the wafer is divided into a plurality of components by a planned dividing line and formed in a front component area, and a peripheral remaining area surrounding the component area, and the auxiliary device includes: The first opening is substantially the same shape as the outer shape of the wafer and accommodates the wafer; and the second opening has a support portion formed at the bottom of the first opening to avoid contact with the element area, And support the rest of the peripheral area. By using the laser processing method for this auxiliary device, even when laser processing is performed by irradiating laser light from the back side of the wafer, the modified layer can be formed inside the wafer without damaging the front side of the element. In addition, since there is no need to stick a protective tape with an adhesive layer on the front surface of the wafer, it is possible to solve the problem that a part of the adhesive layer adheres to the device, which reduces the quality and damages the device when peeled off.

以下參閱隨附圖式詳細說明關於基於本發明所構成的晶圓加工方法以及用於該晶圓加工的輔助器具。The wafer processing method according to the present invention and an auxiliary device for the wafer processing will be described in detail below with reference to the accompanying drawings.

（輔助器具準備步驟） 圖1（a）表示基於本發明的晶圓加工方法的輔助器具準備步驟中所準備的輔助器具100的全體立體圖，而圖1（b）表示圖1（a）的A-A剖面圖。輔助器具100，例如，由具有晶圓的直徑+10mm程度的直徑的Si（矽）所構成，具備第一開口部120，其容納與後述工件的晶圓的外徑大致同形狀的晶圓。另外，在第一開口部120的底部，以形成元件的面向下來容納晶圓的情況下，具備：支撐部122，避免與形成有元件的元件區域的接觸並支撐未形成元件的外周剩餘區域；以及第二開口部130，形成於第一開口部120的底部的支撐部122的內側區域；且在第二開口部130的底部形成底壁132。上述輔助器具100，例如，能用如以下程序製造。(Auxiliary Device Preparation Step) FIG. 1( a ) shows an overall perspective view of the auxiliary device 100 prepared in the auxiliary device preparation step of the wafer processing method according to the present invention, and FIG. 1( b ) shows A-A of FIG. 1( a ) Sectional drawing. The auxiliary tool 100 is composed of, for example, Si (silicon) having a diameter of the wafer diameter + 10 mm, and includes a first opening 120 that accommodates a wafer having substantially the same shape as the outer diameter of the wafer of the workpiece described later. In addition, in the case where the bottom of the first opening portion 120 accommodates the wafer with the element-forming surface downward, a support portion 122 is provided to avoid contact with the element region where the element is formed and to support the remaining peripheral region where the element is not formed; And the second opening 130 is formed at the inner area of the support part 122 at the bottom of the first opening 120 ; and a bottom wall 132 is formed at the bottom of the second opening 130 . The above-mentioned assisting device 100 can be manufactured, for example, by the following procedure.

首先，準備Si基板，其具有相對於應加工晶圓的直徑為+10mm的直徑，並具有相對於應加工晶圓的厚度為+0.6mm的厚度。接著，以研削輪在Si基板的上表面研削0.1mm形成粗糙面，該研削輪環狀地具備研削磨石，該研削磨石是將粒徑50μm程度的金剛石磨粒以樹脂結合劑固定所形成。接著，將研削輪定位於從Si基板的外周端往內側略小於5mm處並研削至500μm的深度，並形成與晶圓大致同形狀的第一開口部120，該研削輪是以應加工晶圓的直徑的1/2程度的直徑而環狀地具備研削磨石，該研削磨石是將粒徑20μm程度的金剛石磨粒以樹脂結合劑固定所形成。進而，將形成第一開口部120的研削輪在第一開口部120的底部以僅對應於應加工晶圓的外周剩餘區域的寬度(2~3mm)之寬度(2~3mm)定位於內側，以留下支撐部122，並形成研削至20μm深度的第二開口部130。藉由以上完成輔助器具100。 First, a Si substrate is prepared, which has a diameter of +10 mm with respect to the diameter of the wafer to be processed, and a thickness of +0.6 mm with respect to the thickness of the wafer to be processed. Next, the upper surface of the Si substrate was ground to a rough surface by 0.1 mm with a grinding wheel, which was annularly provided with a grinding stone obtained by fixing diamond abrasive grains having a particle size of about 50 μm with a resin bond. . Next, a grinding wheel is positioned at a position slightly less than 5 mm inward from the outer peripheral end of the Si substrate and ground to a depth of 500 μm, and a first opening 120 having substantially the same shape as the wafer is formed. The diameter of about 1/2 of the diameter is provided with a grinding stone in a ring shape, and the grinding stone is formed by fixing diamond abrasive grains having a particle diameter of about 20 μm with a resin bond. Further, the grinding wheel for forming the first opening 120 is positioned inside the bottom of the first opening 120 with a width (2-3 mm) corresponding only to the width (2-3 mm) of the remaining area of the outer periphery of the wafer to be processed, To leave the support portion 122, a second opening portion 130 ground to a depth of 20 μm is formed. With the above, the assistive device 100 is completed.

藉由上述程序的製造，圍繞輔助器具100的第一開口部120的外周112形成粗糙面，以使後述晶圓加工時照射的雷射光線散射。再者，外周112並非限定藉由上述條件研削之物，只要形成使加工時照射的雷射光線散射的程度的粗糙面即可。 Through the above-described manufacturing process, a rough surface is formed around the outer periphery 112 of the first opening 120 of the auxiliary tool 100 so as to scatter the laser light irradiated during wafer processing described later. In addition, the outer periphery 112 is not limited to what is ground by the above-mentioned conditions, and it is only necessary to form a rough surface to the extent that the laser light irradiated during processing is scattered.

輔助器具100的第一開口部120的深度，是配合加工晶圓的厚度而設定，在本實施方式例如設為500μm程度的深度。另外，第二開口部130的深度，亦即，從底壁132至支撐部122的段差，設定為20μm。再者，該段差為不會接觸於第一開口部120容納的晶圓的元件形成面之程度的段差即可，較佳為設定成10~20μm程度。再者，圖1為了易於瞭解地說明輔助器具100的構成，非沿用實際的尺寸之物。 The depth of the first opening 120 of the auxiliary tool 100 is set according to the thickness of the wafer to be processed, and is set to a depth of, for example, about 500 μm in the present embodiment. In addition, the depth of the second opening portion 130 , that is, the level difference from the bottom wall 132 to the support portion 122 is set to 20 μm. In addition, the level difference may be a level difference such that the element formation surface of the wafer accommodated in the first opening portion 120 does not come into contact, and is preferably set to about 10 to 20 μm. In addition, in FIG. 1, in order to demonstrate the structure of the assisting device 100 easily, it does not follow the actual size.

對作為工件的晶圓施予加工前，準備以上所示的輔助器具100，藉此結束輔助器具準備步驟。 Before processing the wafer as a workpiece, the auxiliary device 100 shown above is prepared, thereby ending the auxiliary device preparation step.

(框架支撐步驟) (Frame support step)

接著實施框架支撐步驟。實施框架支撐步驟時，首先，如圖2(a)所示準備作為工件的大致圓形狀的晶圓10。晶圓10為，例如對由Si(矽)組成的晶圓實施包含光刻處理及蝕刻的加工，以在正面10a上之由互相正交的多條分割預定線12劃分的元件區域上形成多個元件(MEMS)14之晶圓。在圍繞該元件14所形成的該元件區域的外周形成外周剩餘區域10c，外周剩餘區域10c上不形成元件14。將晶圓10的背面10b黏貼至切割膠帶T，並以具有容納晶圓10的開口的框架F在容納晶圓10的狀態下黏貼至切割膠帶T，以該框架F支撐該晶圓10。藉由以上完成框架支撐步驟(參閱圖2(b))。The frame supporting step is then carried out. When the frame supporting step is carried out, first, as shown in FIG. 2( a ), a substantially circular wafer 10 as a workpiece is prepared. The wafer 10 is, for example, a wafer made of Si (silicon) subjected to a process including photolithography and etching to form a plurality of elements on the front surface 10a of the device region divided by a plurality of planned dividing lines 12 orthogonal to each other. A wafer of individual devices (MEMS) 14 . A peripheral remaining area 10c is formed on the outer periphery of the element area formed around the element 14, and the element 14 is not formed on the outer peripheral remaining area 10c. The back surface 10b of the wafer 10 is attached to the dicing tape T, and is attached to the dicing tape T with a frame F having an opening for accommodating the wafer 10 in a state of accommodating the wafer 10 , and the frame F supports the wafer 10 . Through the above steps, the frame supporting step is completed (refer to Figure 2(b)).

若完成了上述的框架支撐步驟，則實施使晶圓10保持在雷射加工裝置的卡盤台上的卡盤台載置步驟。參閱圖3，一邊說明關於要實現本發明的晶圓加工方法所構成的雷射加工裝置2。After the above-described frame supporting step is completed, a chuck table mounting step for holding the wafer 10 on the chuck table of the laser processing apparatus is performed. Referring to FIG. 3 , the laser processing apparatus 2 configured to realize the wafer processing method of the present invention will be described.

圖3所示雷射加工裝置2具備：保持手段22，保持工件；移動手段23，配設於靜止基台2a上並使保持手段22移動；雷射光線照射手段24，對被保持手段22保持的工件照射雷射光線；垂直壁部51，立設於靜止基台2a上的移動手段23的側邊以箭頭Z所示的Z方向；以及框體50，由從垂直壁部51的上端部向水平方向延伸的水平壁部52組成。在框體50的水平壁部52內部，內置構成本發明的雷射加工裝置2的主要部分的雷射光線照射手段24的光學系統，在水平壁部52的前端部下表面側，配設構成雷射光線照射手段24的聚光器241，且相對於聚光器241在圖中箭頭X所示方向相鄰的位置上配設攝像手段26。該攝像手段26包含：一般的攝像元件（CCD），藉由可見光攝像；紅外線照射手段，對工件照射紅外線；光學系統，捕捉藉由紅外線照射手段照射的紅外線；以及攝像元件（紅外線CCD），輸出對應該光學系統捕捉的紅外線的電子訊號。The laser processing apparatus 2 shown in FIG. 3 includes: holding means 22 for holding the workpiece; moving means 23 for moving the holding means 22 on the stationary base 2 a; and laser beam irradiation means 24 for holding the held means 22 The workpiece is irradiated with laser light; the vertical wall portion 51, the side of the moving means 23 erected on the stationary base 2a is in the Z direction indicated by the arrow Z; The horizontal wall portion 52 extending in the horizontal direction is formed. Inside the horizontal wall portion 52 of the casing 50, an optical system of the laser beam irradiation means 24 constituting the main part of the laser processing apparatus 2 of the present invention is built, and on the lower surface side of the front end portion of the horizontal wall portion 52, a laser beam forming a laser beam is arranged. The condenser 241 of the light irradiation means 24 is radiated, and the imaging means 26 is disposed at a position adjacent to the condenser 241 in the direction indicated by the arrow X in the figure. The imaging means 26 includes: a general imaging element (CCD) for imaging with visible light; infrared irradiation means for irradiating infrared rays to the workpiece; an optical system for capturing the infrared rays irradiated by the infrared irradiation means; and an imaging element (infrared CCD) for outputting An electrical signal corresponding to the infrared rays captured by this optical system.

保持手段22包含：矩形狀的X方向可動板30，在圖中箭頭X所示X方向上移動自如地搭載於靜止基台2a；矩形狀的Y方向可動板31，在圖中箭頭Y所示方向移動自如地搭載於X方向可動板30；圓筒狀的支柱32，固定於Y方向可動板31的上表面；以及矩形狀的蓋板33，固定於支柱32的上端。在蓋板33配設有卡盤台34，其構成為通過在該蓋板33上形成的長孔而延伸至上方，保持圓形狀的工件，並藉由未圖示的旋轉驅動手段而能夠旋轉。在卡盤台34上表面，配置吸引保持手段，其由從多孔質材料形成且實質上以水平延伸的圓形狀的吸附卡盤35所組成。吸附卡盤35，藉由通過支柱32的流路連接未圖示的吸引手段，在吸附卡盤35的周圍，均等配置4個夾具36，該些夾具36用來在將工件固定於卡盤台34時對保持晶圓10的框架F進行把持。再者，X方向為在圖1箭頭X所示方向，Y方向為箭頭Y所示方向且為和X方向正交的方向。X方向與Y方向所規定的平面為實質上水平。The holding means 22 includes a rectangular X-direction movable plate 30, which is mounted on the stationary base 2a movably in the X direction indicated by the arrow X in the figure, and a rectangular Y-direction movable plate 31, which is indicated by the arrow Y in the figure. It is mounted on the X-direction movable plate 30 movably in the direction; a cylindrical column 32 is fixed to the upper surface of the Y-direction movable plate 31; The cover plate 33 is provided with a chuck table 34 that extends upward through an elongated hole formed in the cover plate 33, holds a circular workpiece, and is configured to be rotatable by rotational driving means (not shown). . On the upper surface of the chuck table 34, there is disposed suction and holding means composed of a circular suction chuck 35 formed from a porous material and extending substantially horizontally. The suction chuck 35 is connected to suction means (not shown) through the flow path of the support column 32, and four jigs 36 are evenly arranged around the suction chuck 35, and these jigs 36 are used to fix the workpiece on the chuck table. At 34, the frame F holding the wafer 10 is held. In addition, the X direction is the direction indicated by the arrow X in FIG. 1 , and the Y direction is the direction indicated by the arrow Y and is a direction orthogonal to the X direction. The plane defined by the X direction and the Y direction is substantially horizontal.

移動手段23包含X方向移動手段40與Y方向移動手段42。X方向移動手段40將馬達的旋轉運動透過滾珠螺桿轉換為直線運動傳遞至X方向可動板30，並沿著靜止基台2a上的導軌在X方向使X方向可動板30前進後退。Y方向移動手段42，將馬達的旋轉運動透過滾珠螺桿轉換為直線運動傳遞至Y方向可動板31，並沿著X方向可動板30上的導軌在Y方向使Y方向可動板31前進後退。再者，雖省略圖示，但在X方向移動手段40與Y方向移動手段42分別配設位置檢測手段，正確檢測出卡盤台34的X方向的位置、Y方向的位置、周方向的旋轉位置，並基於從後述控制手段指示的訊號而驅動X方向移動手段40、Y方向移動手段42及未圖示的旋轉驅動手段，能於任意的位置及角度正確定位卡盤台34。再者，上述雷射加工裝置2全體及移動手段23等，在一般加工狀態中，構成為藉由為方便說明而省略之未圖示的蓋子、蛇腹等覆蓋之方式而使粉塵及灰塵等無法進入內部的構造。 The moving means 23 includes an X-direction moving means 40 and a Y-direction moving means 42 . The X-direction moving means 40 converts the rotational motion of the motor into linear motion through a ball screw and transmits it to the X-direction movable plate 30, and moves the X-direction movable plate 30 forward and backward in the X direction along the guide rails on the stationary base 2a. The Y-direction moving means 42 converts the rotational motion of the motor into linear motion through a ball screw and transmits it to the Y-direction movable plate 31, and moves the Y-direction movable plate 31 forward and backward in the Y direction along the guide rails on the X-direction movable plate 30. In addition, although the illustration is omitted, the X-direction moving means 40 and the Y-direction moving means 42 are provided with position detection means, respectively, so that the position in the X direction, the position in the Y direction, and the rotation in the circumferential direction of the chuck table 34 are accurately detected. position, and drive the X-direction moving means 40, Y-direction moving means 42, and rotational drive means (not shown) based on a signal instructed from a control means described later, so that the chuck table 34 can be accurately positioned at any position and angle. In addition, the above-mentioned laser processing apparatus 2 as a whole and the moving means 23 and the like are constructed so as to prevent dust and dust from being covered by a cover, a bellows, etc., which are not shown for convenience of description, in a normal processing state. Enter the inner construction.

本實施方式的雷射加工裝置2，概以如以上之方式構成，以下說明關於接續上述框架支撐步驟所實施的卡盤台載置步驟。 The laser processing apparatus 2 of the present embodiment is generally configured as described above, and the following describes the chuck table mounting step performed subsequent to the frame supporting step described above.

(卡盤台載置步驟) (Chuck table mounting procedure)

卡盤台載置步驟如圖4(a)所示，在卡盤台34的吸附卡盤35上載置輔助器具100，並在輔助器具100的第一開口部120將形成元件14的晶圓10的正面10a側向下進行容納，且藉由使4個夾具36作用於保持晶圓10的框架F而進行固定。進而，藉由使吸引力作用在卡盤台34的吸附卡盤35而吸引保持輔助器具100。此時，在輔助器具100的支撐部122抵接並保持外周剩餘區域10c，該外周剩餘區域10c圍繞形成晶圓10的正面10a之形成元件14的元件區域。藉此，如圖4(b)的概略剖面圖所示，切割膠帶T位於最上面，且晶圓10透過輔助器具100在卡盤台34的吸附卡盤35上保持，並確保晶圓10的形成元件14的元件區域及輔助器具100的底壁132之間的空間(約為20μm)。藉由以上完成卡盤台載置步驟。 Chuck Stage Mounting Step As shown in FIG. 4( a ), the auxiliary tool 100 is placed on the suction chuck 35 of the chuck stage 34 , and the wafer 10 on which the component 14 is formed is placed on the first opening 120 of the auxiliary tool 100 . The front surface 10a side of the wafer is accommodated downward, and is fixed by applying four jigs 36 to the frame F holding the wafer 10 . Furthermore, the holding aid 100 is sucked by making the suction chuck 35 of the chuck table 34 act on the suction chuck 35 . At this time, the support portion 122 of the auxiliary tool 100 abuts and holds the peripheral remaining area 10 c surrounding the element area forming the element 14 forming the front surface 10 a of the wafer 10 . Thereby, as shown in the schematic cross-sectional view of FIG. 4( b ), the dicing tape T is positioned on the uppermost side, and the wafer 10 is held on the suction chuck 35 of the chuck table 34 through the auxiliary tool 100 , and the wafer 10 is secured. The space (about 20 μm) between the element area where the element 14 is formed and the bottom wall 132 of the auxiliary device 100 . With the above, the chuck table placement procedure is completed.

(改質層形成步驟) (modified layer forming step)

如上述般，若完成了卡盤台載置步驟，則實施用來在晶圓的內部形成改質層的改質層形成步驟。改質層形成步驟具體而言是根據以下程序而實施。 As described above, when the chuck table mounting step is completed, a modified layer forming step for forming a modified layer inside the wafer is performed. Specifically, the step of forming the modified layer is carried out according to the following procedure.

若在卡盤台34上保持住了輔助器具100與晶圓10，則移動手段23作動並將卡盤台34定位於攝像手段26的正下方。當卡盤台34定位於攝像手段26的正下方，則由攝像手段及未圖示之控制手段實施檢測晶圓10的應雷射加工的加工區域的對位作業。亦即，攝像手段26及控制手段實行圖案匹配等的圖像處理，以進行沿著晶圓10的分割預定線12照射雷射光線LB的雷射光線照射手段24的聚光器241及加工區域之間的對位，並展開雷射光線照射位置的對準步驟。此驟。此時，雖形成晶圓10的分割預定線12的正面10a位於下側位置，但因攝像手段26由如上述的紅外線照明手段與捕捉紅外線的光學系統，及輸出對應紅外線的電子訊號之攝像元件（紅外線CCD）等所構成，故能穿透切割膠帶T及晶圓10對正面10a側的分割預定線12攝像。When the auxiliary tool 100 and the wafer 10 are held on the chuck table 34 , the moving means 23 is activated to position the chuck table 34 directly below the imaging means 26 . When the chuck table 34 is positioned directly below the imaging means 26 , the imaging means and control means (not shown) perform an alignment operation for detecting the processing area of the wafer 10 to be laser processed. That is, the imaging means 26 and the control means perform image processing such as pattern matching to perform the concentrator 241 and the processing area of the laser beam irradiation means 24 for irradiating the laser beam LB along the planned dividing line 12 of the wafer 10 . Alignment between, and start the alignment steps of the position where the laser light is irradiated. this step. At this time, although the front surface 10a of the planned dividing line 12 of the wafer 10 is located at the lower position, the imaging means 26 is composed of the above-mentioned infrared illuminating means, an optical system for capturing infrared rays, and an imaging element for outputting electronic signals corresponding to infrared rays. (infrared CCD), etc., it can penetrate through the dicing tape T and the wafer 10 to image the line to be divided 12 on the front surface 10a side.

若實施了上述對位步驟，則如圖5（a）所示，將對晶圓10具有穿透性波長的雷射光線LB通過切割膠帶T，亦即透過切割膠帶T沿著分割預定線12照射，實施在晶圓10的內部形成改質層200的改質層形成步驟。更具體而言，將卡盤台34移動至照射雷射光線LB的雷射光線照射手段24的聚光器241所位在的雷射光線照射區域，且將預定的分割預定線12的一端定位於雷射光線照射手段24的聚光器241正下方。接著，將從聚光器241照射的雷射光線LB的聚光點定位於晶圓10的內部，從聚光器24照射對晶圓10具有穿透性的波長的脈衝雷射光線LB，同時使卡盤台34往圖中箭頭X所示方向以預定的加工進給速度移動，並移動至分割預定線12的另一端。如此加工般一邊作動保持手段22及移動手段23，一邊實施沿著全部的分割預定線12形成改質層的雷射加工（參閱圖5（b））。再者，圖5（b）表示從輔助器具100取出晶圓10且為正面10a側向上方的狀態之圖。If the above-mentioned alignment step is performed, as shown in FIG. 5( a ), the laser light LB having a penetrating wavelength to the wafer 10 passes through the dicing tape T, that is, passes through the dicing tape T along the planned dividing line 12 . The modified layer forming step of forming the modified layer 200 in the inside of the wafer 10 is performed by irradiation. More specifically, the chuck table 34 is moved to the laser light irradiation area where the condenser 241 of the laser light irradiation means 24 irradiating the laser light beam LB is located, and one end of the predetermined dividing line 12 is positioned. It is directly below the condenser 241 of the laser light irradiation means 24 . Next, the condensing point of the laser beam LB irradiated from the condenser 241 is positioned inside the wafer 10 , and the pulsed laser beam LB of the wavelength having penetrability to the wafer 10 is irradiated from the condenser 24 . The chuck table 34 is moved in the direction indicated by the arrow X in the figure at a predetermined processing feed speed, and is moved to the other end of the planned dividing line 12 . While operating the holding means 22 and the moving means 23 as described above, laser processing for forming a modified layer along all the planned dividing lines 12 is performed (see FIG. 5( b )). 5( b ) is a diagram showing a state in which the wafer 10 is taken out from the auxiliary tool 100 and the front surface 10 a is turned upward.

在上述雷射加工實施的雷射加工條件，例如以下述般所設定。 波長 ：1030nm 脈衝寬度 ：10ps 重複頻率 ：100kHz 聚光透鏡（數值孔徑） ：0.8 平均輸出 ：0.5W 散焦 ：-290μm 點徑 ：φ5μm 加工進給速度 ：1000nm/秒The laser processing conditions performed in the above-mentioned laser processing are set as follows, for example. Wavelength: 1030nm Pulse width: 10ps Repetition frequency: 100kHz Condenser lens (numerical aperture): 0.8 Average output: 0.5W Defocus: -290μm Spot diameter: φ5μm Machining feed rate: 1000nm/sec

在本發明中，不用黏貼對晶圓10的形成了元件14的正面10a側進行保護之黏著膠帶等，而使用如上述的輔助器具實施雷射加工。因此，在實施雷射加工後，將黏著性的膠帶剝離等為非必要，即使如MEMS元件的細微複雜的電路所形成的元件，亦不發生損害等問題。In the present invention, an adhesive tape or the like for protecting the front surface 10a side of the wafer 10 on which the element 14 is formed is not attached, but the laser processing is performed using the above-mentioned auxiliary tool. Therefore, it is not necessary to peel off the adhesive tape after laser processing, and even a device formed of a delicate and complicated circuit such as a MEMS device does not suffer from problems such as damage.

實施上述雷射加工時，開始對預定的分割預定線12的雷射光線LB照射的開始位置及結束雷射光線LB照射的結束位置，不論何者皆僅距晶圓10上的分割預定線12的端部些微距離地定位於輔助器具100的外周112側。在此，本發明如上述，輔助器具100的外周112的正面加工為粗糙面以使雷射光線LB照射時會散射，即使在輔助器具100的外周112照射雷射光線亦能防止劣化。再者，輔助器具100的外周112的寬度為3~5mm程度較佳。藉由以上完成改質層形成步驟。When the above-mentioned laser processing is performed, the starting position for starting the irradiation of the laser beam LB on the predetermined dividing line 12 and the ending position for ending the irradiation of the laser light LB are only within the distance from the dividing planned line 12 on the wafer 10 . The ends are positioned at a slight distance on the outer periphery 112 side of the assistive device 100 . Here, in the present invention, as described above, the front surface of the outer periphery 112 of the auxiliary device 100 is processed into a rough surface so that the laser light LB scatters when irradiated, so that even if the outer periphery 112 of the auxiliary device 100 is irradiated with laser light, deterioration can be prevented. Furthermore, the width of the outer periphery 112 of the auxiliary device 100 is preferably about 3 to 5 mm. Through the above, the step of forming the modified layer is completed.

（框架支撐步驟） 如上述，若完成了改質層形成步驟，則實施分割步驟。參閱圖6並一邊說明關於本實施方式中要實施分割步驟所構成之分割裝置70。(Frame Supporting Step) As described above, when the reforming layer forming step is completed, the dividing step is performed. Referring to FIG. 6 , the dividing device 70 configured to perform the dividing step in this embodiment will be described.

圖示的分割裝置70，是藉由將保持晶圓10的環狀框架進行保持的框架保持構件71、及作為配設於框架保持構件71的外周的固定手段的多個夾具72而構成框架保持手段。另外，具備在框架保持構件71的內側配設的擴張鼓輪75，其是要擴張在該框架保持手段所保持的環狀的框架F上所裝設的切割膠帶T。該擴張鼓輪75具有，比環狀的框架F的內徑小，且比裝設於該環狀的框架F的切割膠帶T上所黏貼的晶圓10的外徑大的內徑以及外徑。另外，擴張鼓輪75具備在下端部往徑方向突出所形成的支撐凸緣（省略圖示），在該支撐凸緣上，配設要在上下方向將框架保持構件71前進後退的多個的汽缸73，藉由汽缸73能在上下方向前進後退的活塞桿體74連結於框架保持構件71的下表面。如此般由多個汽缸73與活塞桿體74組成的支撐手段構成為能夠選擇性地在基準位置和擴張位置之間移動，該基準位置為在圖6（a）以實線所示般環狀的框架保持構件71與擴張鼓輪75的上端成為大致同一高度的位置，擴張位置為以兩點鏈線所示般環狀的框架保持構件71在距擴張鼓輪75的上端預定量下方的位置。The dividing device 70 shown in the figure is constituted by a frame holding member 71 holding a ring-shaped frame holding the wafer 10 and a plurality of jigs 72 as fixing means arranged on the outer periphery of the frame holding member 71 to form a frame holding member 71 . means. Moreover, the expansion drum 75 arrange|positioned at the inner side of the frame holding member 71 is provided, and it expands the dicing tape T attached to the ring-shaped frame F hold|maintained by this frame holding means. The expansion drum 75 has an inner diameter and an outer diameter that are smaller than the inner diameter of the annular frame F and larger than the outer diameter of the wafer 10 attached to the dicing tape T mounted on the annular frame F. . Further, the expansion drum 75 is provided with a support flange (not shown) formed to protrude in the radial direction at the lower end portion, and on the support flange, a plurality of frames for advancing and retreating the frame holding member 71 in the vertical direction are arranged. The cylinder 73 is connected to the lower surface of the frame holding member 71 by a piston rod body 74 which can move forward and backward in the vertical direction of the cylinder 73 . In this way, the support means composed of the plurality of cylinders 73 and the piston rod body 74 is configured so as to be able to selectively move between a reference position and an expanded position, and the reference position is annular as shown by a solid line in FIG. 6( a ). The frame holding member 71 and the upper end of the expansion drum 75 are at substantially the same height, and the expansion position is the position where the frame holding member 71, which is ring-shaped as shown by a two-dot chain line, is a predetermined amount below the upper end of the expansion drum 75. .

說明關於上述分割裝置70的作用。將透過切割膠帶T支撐沿著分割預定線12形成了改質層200的晶圓10之環狀的框架F載置於框架保持構件71的載置面上，並由夾具72固定框架保持構件71。此時，框架保持構件71定位於圖6（a）中實線所示的基準位置。The operation of the division device 70 described above will be described. A ring-shaped frame F supporting the wafer 10 with the modified layer 200 formed along the line to be divided 12 through the dicing tape T is placed on the placement surface of the frame holding member 71 , and the frame holding member 71 is fixed by the jig 72 . . At this time, the frame holding member 71 is positioned at the reference position shown by the solid line in FIG. 6( a ).

在定位於圖中實線所示基準位置的框架保持構件71，若透過切割膠帶T固定了支撐晶圓10的環狀的框架F，則作動構成膠帶擴張手段的多個的汽缸73，使環狀的框架保持構件71下降。藉此，因被固定在框架保持構件71的載置面上的環狀的框架F也下降，故如圖中兩點鏈線所示般裝設在環狀的框架F上的切割膠帶T，抵接相對上升的擴張輪鼓75的上端緣而使其被擴張。這個結果，在黏貼於切割膠帶T的晶圓10上作用放射狀的拉力，且如圖6（b）所示，沿著分割預定線12形成的改質層200成為分割起點，沿著各個的元件14形成分割線210。藉由以上完成分割步驟When the frame holding member 71 positioned at the reference position indicated by the solid line in the drawing fixes the ring-shaped frame F supporting the wafer 10 through the dicing tape T, the plurality of cylinders 73 constituting the tape expanding means are actuated to make the ring-shaped frame F support the wafer 10 fixed. The shaped frame holding member 71 descends. Thereby, since the annular frame F fixed on the mounting surface of the frame holding member 71 is also lowered, the dicing tape T attached to the annular frame F as shown by the two-dotted chain line in the figure, It abuts against the upper end edge of the relatively rising expansion drum 75 and is expanded. As a result, a radial pulling force acts on the wafer 10 adhered to the dicing tape T, and as shown in FIG. Elements 14 form dividing lines 210 . Complete the segmentation steps by the above

若完成了上述分割步驟，則使用適合的拾取手段，從切割膠帶T拾取分割為一個個的元件14，並搬送至下個步驟。When the above-mentioned dividing step is completed, the components 14 divided into individual components 14 are picked up from the dicing tape T using an appropriate pick-up means, and conveyed to the next step.

本發明並不限定於上述實施方式，在包含本發明的技術範圍內，可假設為各種變形例。在上述實施方式中，雖以MEMS的情況表示元件14，但本發明並不限定於此，可適用於IC、LSI、LED等，其他的元件所形成之晶圓加工時。The present invention is not limited to the above-described embodiments, and various modifications can be assumed within the technical scope including the present invention. In the above-described embodiment, the element 14 is shown in the case of MEMS, but the present invention is not limited to this, and can be applied to wafer processing in which IC, LSI, LED, and other elements are formed.

2‧‧‧雷射加工裝置10‧‧‧晶圓10a‧‧‧正面10b‧‧‧背面10c‧‧‧外周剩餘區域12‧‧‧分割預定線14‧‧‧元件22‧‧‧保持手段23‧‧‧移動手段34‧‧‧卡盤台35‧‧‧吸附卡盤36‧‧‧夾具40‧‧‧X方向移動手段42‧‧‧Y方向移動手段70‧‧‧分割裝置100‧‧‧輔助器具112‧‧‧外周120‧‧‧第一開口部122‧‧‧支撐部130‧‧‧第二開口部132‧‧‧底壁2‧‧‧Laser processing apparatus 10‧‧‧Wafer 10a‧‧‧Front surface 10b‧‧‧Back surface 10c‧‧‧Outer peripheral remaining area 12‧‧‧Partitioning line 14‧‧‧Elements 22‧‧‧Holding means 23 ‧‧‧Moving means 34‧‧‧Chuck table 35‧‧‧Suction chuck 36‧‧‧Clamp 40‧‧‧X-direction moving means 42‧‧‧Y-direction moving means 70‧‧‧Separation device 100‧‧‧ Auxiliary device 112‧‧‧Outer periphery 120‧‧‧First opening part 122‧‧‧Support part 130‧‧‧Second opening part 132‧‧‧Bottom wall

圖1係基於本發明所構成的輔助器具的全體立體圖及概略剖面圖。 圖2係用以說明本發明的框架支撐步驟的概念圖。 圖3係要實施本發明的雷射加工方法所構成的雷射加工裝置的全體立體圖。 圖4係用以說明本發明的卡盤台載置步驟的概念圖。 圖5係用以說明本發明的改質層形成步驟的概念圖。 圖6係用以說明本發明的分割步驟的概念圖。FIG. 1 is an overall perspective view and a schematic cross-sectional view of an assisting device constructed according to the present invention. FIG. 2 is a conceptual diagram for explaining the frame supporting step of the present invention. 3 is an overall perspective view of a laser processing apparatus configured to implement the laser processing method of the present invention. FIG. 4 is a conceptual diagram for explaining a chuck table mounting step of the present invention. FIG. 5 is a conceptual diagram for explaining the step of forming a modified layer of the present invention. FIG. 6 is a conceptual diagram for explaining the dividing step of the present invention.

10‧‧‧晶圓 10‧‧‧Wafer

10a‧‧‧正面 10a‧‧‧Front

10b‧‧‧背面 10b‧‧‧Back

10c‧‧‧外周剩餘區域 10c‧‧‧Remaining area of outer periphery

14‧‧‧元件 14‧‧‧Components

100‧‧‧輔助器具 100‧‧‧Aids

200‧‧‧改質層 200‧‧‧modified layer

241‧‧‧聚光器 241‧‧‧Concentrator

F‧‧‧框架 F‧‧‧Frame

LB‧‧‧雷射光線 LB‧‧‧laser light

T‧‧‧切割膠帶 T‧‧‧Cutting Tape

Claims (5)

一種晶圓加工方法，將具備由分割預定線劃分成多個元件並形成於正面的元件區域與圍繞該元件區域的外周剩餘區域之晶圓分割為各個元件，該晶圓加工方法至少由下述步驟所構成：輔助器具準備步驟，準備輔助器具，該輔助器具具備：第一開口部，與晶圓的外徑大致同形狀並容納晶圓；支撐部，形成於該第一開口部的底部並避免和該元件區域的接觸，並支撐該外周剩餘區域；以及第二開口部，形成於該第一開口部的底部的該支撐部的內側；框架支撐步驟，將晶圓的背面黏貼至切割膠帶，並以具有容納晶圓的開口的框架在容納晶圓的狀態下黏貼至切割膠帶，以該框架支撐該晶圓；卡盤台載置步驟，在具備吸引保持手段的卡盤台載置該輔助器具，並在該輔助器具的第一開口部容納晶圓的正面側，且在該卡盤台使吸引力產生作用；改質層形成步驟，將對該晶圓具有穿透性的波長的雷射光線的聚光點透過該切割膠帶從該晶圓的背面定位於內部並照射，且沿著分割預定線形成改質層；以及分割步驟，透過切割膠帶對在框架保持的晶圓施加外力，沿著該分割預定線將晶圓分割為各個元件，其中在該輔助器具準備步驟中準備的輔助器具，對該第一開口部的外周的表面加工為粗糙面，使該改質層形成步驟中使用的雷射光線散射。 A wafer processing method for dividing a wafer having a component area divided into a plurality of components by a planned dividing line and formed on the front surface and a peripheral remaining area surrounding the component area into individual components, the wafer processing method at least by the following: The steps are composed of: an auxiliary device preparation step, an auxiliary device is prepared, the auxiliary device has: a first opening part, which is substantially the same shape as the outer diameter of the wafer and accommodates the wafer; a support part is formed at the bottom of the first opening part and Avoid contact with the element area, and support the remaining area of the outer periphery; and a second opening formed on the inner side of the support at the bottom of the first opening; a frame supporting step, adhering the backside of the wafer to a dicing tape , and a frame with an opening for accommodating the wafer is pasted to the dicing tape in the state of accommodating the wafer, and the wafer is supported by the frame; the chuck table placing step is to place the chuck table on a chuck table with suction and holding means. Auxiliary device, and the first opening of the auxiliary device accommodates the front side of the wafer, and the chuck table makes an attractive force; the modification layer forming step, the wafer has a transparent wavelength. The condensing point of the laser light is positioned inside and irradiated from the back of the wafer through the dicing tape, and a modified layer is formed along the dividing line; and in the dividing step, an external force is applied to the wafer held in the frame through the dicing tape , dividing the wafer into individual elements along the planned dividing line, wherein the auxiliary device prepared in the auxiliary device preparation step is processed into a rough surface on the outer peripheral surface of the first opening, and the modified layer is formed in the step The laser light used in scatter. 如申請專利範圍第1項所述之晶圓加工方法，其中在該輔助器具準備步驟中準備的輔助器具中，該第二開口部的底和該支撐部的段差設定為10μm~20μm。 The wafer processing method according to claim 1, wherein in the auxiliary device prepared in the auxiliary device preparation step, the level difference between the bottom of the second opening portion and the support portion is set to 10 μm˜20 μm. 如申請專利範圍第1項或第2項中任一項所述之晶圓加工方法，其中在該晶圓的該元件區域形成的元件為MEMS。 The wafer processing method according to any one of claim 1 or claim 2, wherein the device formed in the device region of the wafer is MEMS. 一種輔助器具，將晶元進行支撐，該晶元具備由分割預定線劃分成多個元件並形成於正面的元件區域，與圍繞該元件區域的外周剩餘區域，該輔助器具具備： 第一開口部，與晶圓的外形狀大致同形狀並用以容納晶圓；以及第二開口部，具有支撐部，該支撐部形成於該第一開口部的底，避免和該元件區域的接觸，並支撐外周剩餘區域，其中該輔助器具的該第一開口部的外周的表面形成為粗糙面，使雷射光線散射。 An auxiliary device for supporting a wafer, the wafer having an element region divided into a plurality of elements by a predetermined dividing line and formed on the front surface, and a peripheral remaining region surrounding the element region, the auxiliary device comprising: The first opening is substantially the same shape as the outer shape of the wafer and is used for accommodating the wafer; and the second opening has a supporting portion formed at the bottom of the first opening to avoid contact with the component area , and supports the remaining area of the outer periphery, wherein the surface of the outer periphery of the first opening of the auxiliary device is formed as a rough surface to scatter the laser light. 如申請專利範圍第4項所述之輔助器具，其中該輔助器具中，該第二開口部的底和該支撐部的段差設定為10μm~20μm。The auxiliary device according to claim 4, wherein in the auxiliary device, the level difference between the bottom of the second opening portion and the support portion is set to 10 μm˜20 μm.
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