CN106298651A - The processing method of wafer - Google Patents
The processing method of wafer Download PDFInfo
- Publication number
- CN106298651A CN106298651A CN201610443117.6A CN201610443117A CN106298651A CN 106298651 A CN106298651 A CN 106298651A CN 201610443117 A CN201610443117 A CN 201610443117A CN 106298651 A CN106298651 A CN 106298651A
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- Prior art keywords
- wafer
- preset lines
- segmentation preset
- modification layer
- processing method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The processing method providing wafer, even being formed with SiO on the backside of the wafer2Film, SiN film or also be able to the device being reliably divided into by wafer one by one in the case of implementing etch processes.On front, a plurality of segmentation preset lines will be formed in clathrate and in the multiple regions divided by a plurality of segmentation preset lines, be formed with the wafer of device be divided into device one by one along segmentation preset lines, the processing method of wafer comprises: modification layer formation process, focus is positioned at inside from the face side of wafer and irradiates the laser beam of wavelength wafer to permeability along segmentation preset lines, be internally formed modification layer at wafer；Guard block bonding process, the most bonding guard block；And back side grinding process, the guard block side of wafer is maintained on chuck table, the back side of wafer is carried out grinding and is formed as the thickness of regulation and is divided into device one by one along the segmentation preset lines being formed with modification layer.
Description
Technical field
The processing method that the present invention relates to wafer, this wafer is formed with a plurality of segmentation preset lines also on front in clathrate
And in the multiple regions marked off by this plurality of segmentation preset lines, it is formed with device, by this wafer along segmentation preset lines
Split.
Background technology
In semiconductor device manufacturing process, by being arranged on the front of the semiconductor wafer as substantially circular plate shape
Cancellate segmentation preset lines and mark off multiple region, this region marked off is formed the device such as IC, LSI.
By the semiconductor wafer so formed being cut off along segmentation preset lines, the region being formed with device is split
And produce device one by one.
As the method that the wafers such as semiconductor wafer are split, by practical for following processing method: by by right
The focus of the pulse laser light in wafer with the wavelength of permeability is positioned at the inside of wafer and pre-along segmentation
Alignment is irradiated, and is continuously formed modification layer in the inside of wafer along segmentation preset lines, along changing because forming this
The segmentation preset lines that matter layer and intensity reduce applies external force, thus divides the wafer into device one by one.
It is divided into one as described above the wafer being formed with modification layer along segmentation preset lines being applied external force
The method of individual device, Patent Document 1 discloses following technology following: by making a reservation for linear along segmentation
One-tenth has the bonding wafer of modification layer in the dicing tape being assemblied in ring-type framework, and extends dicing tape and apply wafer
Pulling force, thus divide the wafer into device one by one along the segmentation preset lines that intensity reduces because formation modification layer.
Further, as the method that the wafers such as semiconductor wafer are split following Patent Document 2 discloses as follows
Technology: the most bonding protection band, wafer will be had to the wavelength of permeability from the rear side of wafer
The focus of pulse laser light be positioned at inside and be irradiated, thus in the inside of wafer along segmentation preset lines
It is continuously formed modification layer along segmentation preset lines, then the back side of wafer is carried out grinding and be formed as the thickness of regulation
And divide the wafer into device one by one.
Patent documentation 1: Japanese Unexamined Patent Publication 2006-12902 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2013-254867 publication
But, there is following problem: when shape on the backside of the wafer during the front of wafer is formed device
Become SiO2Film, SiN film or in the case of implementing etch processes, swash even if sometimes irradiating from the rear side of wafer
Light light also cannot form suitable modification layer in the inside of wafer along segmentation preset lines, it is impossible to is reliably divided by wafer
It is slit into device one by one.
Summary of the invention
The present invention completes in view of the foregoing, and its main technical task is to provide the processing side of a kind of wafer
Method, even if being formed with SiO2Film, SiN film or in the case of implementing etch processes, it is also possible in wafer
Portion forms suitable modification layer along segmentation preset lines and wafer is reliably divided into device one by one.
In order to solve above-mentioned main technical task, according to the present invention, it is provided that the processing method of a kind of wafer, this wafer
Front is formed with a plurality of segmentation preset lines in clathrate and in the multiple districts divided by this plurality of segmentation preset lines
Being formed with device in territory, this wafer is divided into device one by one along segmentation preset lines by the processing method of this wafer,
It is characterized in that, the processing method of this wafer comprises following operation:
Modification layer formation process, by focus from the face side of wafer be positioned at inside and irradiate along segmentation preset lines right
There is in wafer the laser beam of the wavelength of permeability, form modification layer in the inside of wafer along segmentation preset lines；
Guard block bonding process, bonding guard block on the front of wafer implementing this modification layer formation process；
And
Back side grinding process, is maintained at chuck work by the guard block side implementing the wafer of this guard block bonding process
In station, the back side of wafer is carried out grinding and be formed as regulation thickness and along be formed modification layer segmentation pre-
Alignment is divided into device one by one.
Implement SiO on the backside of the wafer2Arbitrary process in film, SiN film and etching.
Further, after implementing above-mentioned back side grinding process, following wafer supporting operation is implemented: at the back of the body of wafer
Bonding dicing tape the peripheral part of this dicing tape is assemblied on ring-type framework on face, and wafer will be bonded in just
Guard block on face is peeled off.
The processing method of the wafer of the present invention comprises: modification layer formation process, is positioned from the face side of wafer by focus
The laser beam of wavelength wafer to permeability is irradiated along segmentation preset lines, in the inside of wafer in inside
Modification layer is formed along segmentation preset lines；Guard block bonding process, at the wafer implementing this modification layer formation process
Front on bonding guard block；And back side grinding process, the wafer of this guard block bonding process will be implemented
Guard block side is maintained on chuck table, the back side of wafer is carried out grinding and is formed as thickness and the edge of regulation
Be formed modification layer segmentation preset lines be divided into device one by one, due to modification layer formation process in, will gather
Luminous point is positioned at inside from the face side of wafer and irradiates along segmentation preset lines and have permeability for semiconductor wafer
The laser beam of wavelength, even if implementing SiO the most on the back side2Film, SiN film and etching in arbitrary
Process, it is also possible to form suitable modification layer in the inside of wafer along segmentation preset lines.Further, due on the implementation
It is formed with suitable modification layer along segmentation preset lines in the wafer, therefore by implementing the back side when stating back side grinding process
Grinding process and along because formed modification layer and intensity reduce segmentation preset lines wafer is reliably divided into one by one
Device.
Accompanying drawing explanation
Fig. 1 is the solid as the semiconductor wafer being carried out the wafer split by the processing method of the wafer of the present invention
Figure.
Fig. 2 is the laser processing device of the modification layer formation process of the processing method of the wafer for implementing the present invention
Want portion's axonometric chart.
(a), (b) of Fig. 3 is the explanatory diagram of the modification layer formation process of the processing method of the wafer illustrating the present invention.
(a), (b) of Fig. 4 is the explanatory diagram of the guard block bonding process of the processing method of the wafer of the present invention.
(a), (b) of Fig. 5 is the explanatory diagram of the back side grinding process of the processing method of the wafer of the present invention.
Fig. 6 is the explanatory diagram of the wafer supporting operation of the processing method of the wafer of the present invention.
Fig. 7 is for semiconductor wafer is divided into device one by one by the processing method by the wafer of the present invention
The axonometric chart of the pick device that part is picked up.
(a), (b), (c) of Fig. 8 is the explanatory diagram of the pickup process implemented by the pick device shown in Fig. 7.
Label declaration
2: semiconductor wafer；21: segmentation preset lines；22: device；3: laser processing device；31: Laser Processing
The chuck table of device；32: laser light irradiation component；322: condenser；4: protection band；5: grinding fills
Put；51: the chuck table of grinding attachment；52: grinding component；56: emery wheel；6: pick device；61: frame
Frame keeps component；62: band extension component；63: pickup chuck；F: ring-type framework；T: dicing tape.
Detailed description of the invention
Hereinafter, referring to the drawings being preferred embodiment described in detail the processing method of the wafer of the present invention.
As the axonometric chart of semiconductor wafer of the wafer being processed according to the present invention shown in Fig. 1.Shown in Fig. 1
Semiconductor wafer 2 is made up of the silicon wafer that thickness is such as 600 μm, is formed many on the 2a of front in clathrate
Bar segmentation preset lines 21, and it is formed with IC, LSI in the multiple regions marked off by this plurality of segmentation preset lines 21
Deng device 22.It addition, during front 2a is formed device 22, real to the back side 2b of semiconductor wafer 2
Execute SiO2Film, SiN film, etching etc. process.Hereinafter, to by this semiconductor wafer 2 along segmentation preset lines 21 points
The processing method of the wafer being slit into device 22 one by one illustrates.
First, implement modification layer formation process, focus is positioned at inside from the 2a side, front of semiconductor wafer 2
And the laser beam of wavelength semiconductor wafer 2 to permeability is irradiated along segmentation preset lines 21, partly leading
The inside of body wafer 2 forms modification layer along segmentation preset lines 21.Use the laser processing device 3 shown in Fig. 2
Implement this modification layer formation process.Laser processing device 3 shown in Fig. 2 has: chuck table 31, it is to quilt
Machining object keeps；Laser light irradiation component 32, its machined object to being maintained on this chuck table 31
Irradiating laser light；And shooting component 33, the machined object being maintained on chuck table 31 is shot by it.
Chuck table 31 is configured to machined object be carried out attracting holding, by not shown travel mechanism in fig. 2
Processing direction of feed shown in arrow X and the index feed side shown in arrow Y move up.
Above-mentioned laser light irradiation component 32 is before the shell 321 being assemblied in the substantially drum of horizontal arrangement
The condenser 322 irradiated with pulse laser light of end.Further, the above-mentioned laser light irradiation component 32 of composition it is assemblied in
The shooting component 33 of the leading section of shell 321 has: illuminating member, and machined object is illuminated by it；Optical system
System, it catches the region illuminated by this illuminating member；And capturing element (CCD) etc., its shooting is by this optical system
The image that system captures, the picture signal photographed is sent to not shown control member by this shooting component 33.
About the modification layer formation process using above-mentioned laser processing device 3 to implement, carry out with reference to Fig. 2 and Fig. 3
Explanation.
In this modification layer formation process, first the 2b side, the back side of semiconductor wafer 2 is positioned in above-mentioned Fig. 2 institute
On the chuck table 31 of the laser processing device 3 shown.Further, by making not shown attracting member carry out action
And absorption keeps semiconductor wafer 2 (wafer holding operation) on chuck table 31.Therefore, it is maintained at chuck work
The front 2a of the semiconductor wafer 2 in station 31 is upside.So, attracting holding the chuck of semiconductor wafer 2
Workbench 31 is positioned at the underface of shooting component 33 by not shown processing feeding component.
When chuck table 31 is positioned at the underface of shooting component 33, perform alignment operation, by shooting component
33 and not shown control member detect the machining area that carry out laser machining of semiconductor wafer 2.That is,
Shooting component 33 and not shown control member perform the image procossing such as pattern match, and perform laser light irradiation position
The alignment (alignment process) put, the image procossing such as this pattern match is for carrying out the prescribed direction at semiconductor wafer 2
The segmentation preset lines 21 of upper formation and the laser light irradiation component 32 along segmentation preset lines 21 irradiating laser light
The para-position of condenser 322.Further, for vertical with the direction of the above-mentioned regulation being formed at semiconductor wafer 2
The upwardly extending segmentation preset lines 21 in side, performs the alignment of laser light irradiation position similarly.
As described above to the segmentation preset lines 21 being formed at the semiconductor wafer 2 being maintained on chuck table 31
After carrying out detecting and having carried out the alignment of laser light irradiation position, as shown in (a) of Fig. 3, make chuck work
Station 31 moves the laser beam at condenser 322 place of the laser light irradiation component 32 to irradiating laser light and shines
Penetrate region, one end (for left end in (a) of Fig. 3) of the segmentation preset lines 21 of regulation is positioned at laser beam
Irradiate the underface of the condenser 322 of component 32.Then, by the pulse laser light that irradiates from condenser 322
Focus P is positioned at the thickness direction pars intermedia of semiconductor wafer 2.Further, irradiate for silicon wafer from condenser 322
Sheet has the pulse laser light of the wavelength of permeability and makes chuck table 31 arrow X1 in (a) of Fig. 3
Move with the feed speed of regulation on shown direction.Further, shine at laser beam as shown in (b) of Fig. 3
After the position of the other end that the irradiation position of the condenser 322 penetrating component 32 arrives segmentation preset lines 21, stop arteries and veins
Rush the movement irradiating and stopping chuck table 31 of laser beam.Its result is, in semiconductor wafer 2
Portion forms the modification layer 210 as segmentation starting point along segmentation preset lines 21.It addition, formed at above-mentioned modification layer
In operation, focus is positioned at from the 2a side, front of semiconductor wafer 2 inside and irradiates along segmentation preset lines 21
Semiconductor wafer 2 is had to the laser beam of the wavelength of permeability, even if 2b implements SiO the most overleaf2Film,
SiN film, etching etc. hinder the process that laser beam passes through, it is also possible to pre-along segmentation in the inside of semiconductor wafer 2
Alignment 21 forms suitable modification layer 210.
It addition, the processing conditions of above-mentioned modification layer formation process sets the most as follows.
The pulse laser of wavelength: 1342nm
Repetition rate: 90kHz
Average output: 2W
Optically focused spot diameter: φ 1 μm
Processing feed speed: 500mm/ second
After implementing above-mentioned modification layer formation process along the segmentation preset lines 21 specified as described above, make card
In dish workbench 31 direction shown by arrow Y in fig. 2 index feed be formed at semiconductor wafer 2 segmentation make a reservation for
The interval (index feed operation) of line 21, performs above-mentioned modification layer formation process.So along being formed at regulation
After all of segmentation preset lines 21 in direction implements above-mentioned modification layer formation process, chuck table 31 is made to rotate
90 degree, and along pre-in the side upwardly extending segmentation vertical with the segmentation preset lines 21 being formed at above-mentioned prescribed direction
Alignment 21 performs above-mentioned modification layer formation process.
After implementing above-mentioned modification layer formation process, implement guard block bonding process, be formed at half to protect
Device 22 on the front 2a of conductor wafer 2 and on the front 2a of semiconductor wafer 2 bonding guard block.That is,
As shown in Figure 4, the bonding protection band 4 as guard block on the front 2a of semiconductor wafer 2.It addition, make
For protection band 4 in the illustrated embodiment, at the sheet being made up of the polrvinyl chloride (PVC) that thickness is 100 μm
The thickness being coated with crylic acid resin on the front of shape base material is the paste about 5 μm.
After implementing above-mentioned guard block bonding process, implement back side grinding process, by the guarantor of semiconductor wafer 2
Protecting band 4 side is maintained on chuck table, the back side of semiconductor wafer 2 is carried out grinding and is formed as the thickness of regulation
And it is divided into device one by one along the segmentation preset lines being formed with the modification layer 210 as segmentation starting point.Use
This back side grinding process implemented by grinding attachment 5 shown in (a) of Fig. 5.Grinding attachment shown in (a) of Fig. 5
5 have: as the chuck table 51 of holding component, machined object is kept by it；And grinding component 52,
It carries out grinding to the machined object being held on this chuck table 51.Chuck table 51 is configured at upper surface
Upper attracting holding machined object, by not shown rotary drive mechanism in (a) of Fig. 5 shown in arrow 51a
Side rotate up.Grinding component 52 has: main shaft housing 53；Rotating main shaft 54, it is rotatably freely supported on
This main shaft housing 53, is rotated by not shown rotary drive mechanism；Mounting seat 55, it is assemblied in this rotation master
The lower end of axle 54；And emery wheel 56, it is installed on the lower surface of this mounting seat 55.This emery wheel 56 is by circular
The grinding tool 58 of base station 57 and the lower surface that is assemblied in this base station 57 in the form of a ring is constituted, and base station 57 is by fastening bolt 59
It is installed on the lower surface of mounting seat 55.
Want to use above-mentioned grinding attachment 5 to implement above-mentioned back side grinding process, as shown in (a) of Fig. 5
The protection in the front of semiconductor wafer 2 will be adhered to it will be positioned in 4 sides the upper surface (holding face) of chuck table 51
On.Further, inhale across protection band 4 on chuck table 51 by making not shown attracting member carry out action
Attached holding semiconductor wafer 2 (wafer holding operation).Therefore, the semiconductor wafer on chuck table 51 it is maintained at
The back side 2b of 2 becomes upside.So on chuck table 51, semiconductor die across protection band 4 attracting holdings
After sheet 2, make chuck table 51 in (a) of Fig. 5 on the direction shown in arrow 51a with such as 300rpm
Rotate, and make the emery wheel 56 of grinding component 52 in (a) of Fig. 5 on the direction shown in arrow 56a with such as
6000rpm rotates, and makes grinding tool 58 and the semiconductor wafer 2 as machined surface as shown in (b) of Fig. 5
Back side 2b contacts, make emery wheel 56 as shown in arrow 56b with the grinding and feeding speed of such as 1 μm/second downwards
The amount that (direction vertical with the holding face of chuck table 51) grinding and feeding specifies.Its result is, semiconductor die
The back side 2b and SiO of sheet 22The process faces such as film, SiN film, etching are together ground, and semiconductor wafer 2 is formed as
The thickness (such as 100 μm) of regulation, and along because forming modification layer 210 and the segmentation preset lines of intensity reduction
21 form crackle 210a, thus are divided into device 22 one by one.It addition, be divided into multiple devices one by one
22, owing to being bonded with protection band 4 on the front face, maintain the form of semiconductor wafer 2 thus without becoming at random.
So, suitable owing to being formed along segmentation preset lines 21 in semiconductor wafer 2 when implementing back side grinding process
Modification layer 210, therefore modifies layer 210 and the segmentation of intensity reduction by implementing back side grinding process along being formed with
Preset lines 21 is reliably formed crackle 210a thus semiconductor wafer 2 is divided into device 22 one by one.
After implementing back side grinding process as described above, implement wafer supporting operation, at semiconductor wafer 2
Back side 2b on bonding dicing tape, and the peripheral part of this dicing tape is assemblied in ring-type framework, and will be adhered to
The protection band 4 as guard block in the front of semiconductor wafer 2 is peeled off.I.e., as shown in Figure 6, will implement
The back side 2b of the semiconductor wafer 2 of the back side grinding process stated is bonded in peripheral part to cover in ring-type framework F
On the front of dicing tape T that the mode in side opening portion is assembled.Further, the front of semiconductor wafer 2 will be bonded in
Protection band 4 on 2a is peeled off.Therefore, the front 2a of the semiconductor wafer 2 being bonded on the front of dicing tape T is
Upside.
So, after implementing wafer supporting operation, implement pickup process, to the quasiconductor being adhered to dicing tape T
The device 22 one by one that is divided into of wafer 2 is picked up.The pick device 6 shown in Fig. 7 is used to implement this
Pickup process.Pick device 6 shown in Fig. 7 has: frame retention member 61, and it is to above-mentioned ring-type framework F
Keep；Band extension component 62, it is to being held on the ring-type framework F of this frame retention member 61 assembling
Dicing tape T is extended；And pickup chuck 63.Frame retention member 61 is by ring-type frame retention feature 611
And it is disposed in the constituting as the multiple fixtures 612 fixing component of periphery of this frame retention feature 611.Framework is protected
The upper surface holding parts 611 forms mounting surface 611a loading ring-type framework F, by ring-type framework F
It is positioned in this mounting surface 611a.Further, the ring-type framework that fixture 612 will be positioned in mounting surface 611a is utilized
F is fixed on frame retention feature 611.The frame retention member 61 so constituted is supported as energy by band extension component 62
Enough retreat in the vertical direction.
Band extension component 62 has the extension drum 621 of the inner side being disposed in above-mentioned ring-type frame retention feature 611.
It is little and than being assemblied in dicing tape T of this ring-type framework F that this extension drum 621 has the internal diameter than ring-type framework F
On the big internal diameter of the external diameter of bonding semiconductor wafer 2 and external diameter.Further, extension drum 621 has supporting in lower end
Flange 622.The band extension component 62 of diagram has can make above-mentioned ring-type frame retention feature 611 at upper and lower
The supporting member 623 upwards retreated.This supporting member 623 is by the multiple cylinders being disposed in above-mentioned support lug 622
623a is constituted, and this piston rod 623b links with the lower surface of above-mentioned ring-type frame retention feature 611.So by many
Individual cylinder 623a constitute supporting member 623 make ring-type frame retention feature 611 as Fig. 8 (a) shown in that
Sample mounting surface 611a and the reference position of the upper end substantially sustained height of extension drum 621 are shown with (b) as Fig. 8
Move in the vertical direction between the expanding location of lower section with the amount of regulation compared with the upper end of extension drum 621 like that
Dynamic.
The pickup process implemented using the pick device 6 constituted in the way of as above with reference to Fig. 8 illustrates.That is,
The ring-type framework F being assembled with dicing tape T being bonded with semiconductor wafer 2 is carried as shown in (a) of Fig. 8
Put in mounting surface 611a of frame retention feature 611 constituting frame retention member 61, and solid by fixture 612
Due to frame retention feature 611 (framework holding operation).Now, frame retention feature 611 is located in Fig. 8's
Reference position shown in (a).Then, the multiple cylinders as the supporting member 623 constituting band extension component 62 are made
623a carries out action, and makes ring-type frame retention feature 611 drop to the expanding location shown in (b) of Fig. 8.
Accordingly, because the ring-type framework F being fixed in mounting surface 611a of frame retention feature 611 also declines, therefore
The upper edge of dicing tape T and extension drum 621 that are assemblied in ring-type framework F as shown in (b) of Fig. 8 contacts
And it is expanded (band extension operation).Its result is, due to being adhered to the semiconductor wafer 2 of dicing tape T in radiation
Shape effect has traction force, the most as described above, by the device 22 points being divided into one by one of semiconductor wafer 2
From, and between device 22, form interval (s).
Then, pickup chuck 63 is made to carry out action and absorbing elements 22, from scribing as shown in (c) of Fig. 8
Band T peels off and picks up, and is transported to not shown pallet or chip bonding process.It addition, in pickup process, by
In the interval (s) being formed as described above between the device one by one 22 being adhered to dicing tape T, therefore, it is possible to not
Easily it is picked up in the case of contacting with adjacent device 22.
Claims (3)
1. a processing method for wafer, this wafer be formed in clathrate on front a plurality of segmentation preset lines and
Being formed with device in the multiple regions divided by this plurality of segmentation preset lines, the processing method of this wafer is pre-along segmentation
This wafer is divided into device one by one by alignment, it is characterised in that the processing method of this wafer comprises following operation:
Modification layer formation process, by focus from the face side of wafer be positioned at inside and irradiate along segmentation preset lines right
There is in wafer the laser beam of the wavelength of permeability, form modification layer in the inside of wafer along segmentation preset lines；
Guard block bonding process, bonding guard block on the front of wafer implementing this modification layer formation process；
And
Back side grinding process, is maintained at chuck work by the guard block side implementing the wafer of this guard block bonding process
In station, the back side of wafer is carried out grinding and be formed as regulation thickness and along be formed modification layer segmentation pre-
Alignment is divided into device one by one.
The processing method of wafer the most according to claim 1, wherein,
Implement SiO on the backside of the wafer2Arbitrary process in film, SiN film and etching.
The processing method of wafer the most according to claim 1 and 2, wherein,
After implementing this back side grinding process, implement following wafer supporting operation: the most bonding
The peripheral part of this dicing tape is also assemblied on ring-type framework by dicing tape, and by bonding guarantor on the front side of the wafer
Protect parts to peel off.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-125640 | 2015-06-23 | ||
| JP2015125640A JP2017011119A (en) | 2015-06-23 | 2015-06-23 | Processing method for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106298651A true CN106298651A (en) | 2017-01-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610443117.6A Pending CN106298651A (en) | 2015-06-23 | 2016-06-20 | The processing method of wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017011119A (en) |
| KR (1) | KR20170000330A (en) |
| CN (1) | CN106298651A (en) |
| TW (1) | TW201709302A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7154860B2 (en) * | 2018-07-31 | 2022-10-18 | 株式会社ディスコ | Wafer processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013132674A (en) * | 2011-12-27 | 2013-07-08 | Disco Corp | Processing method of wafer and laser beam machining apparatus |
| WO2014080918A1 (en) * | 2012-11-20 | 2014-05-30 | 古河電気工業株式会社 | Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same |
| JP2014116361A (en) * | 2012-12-06 | 2014-06-26 | Disco Abrasive Syst Ltd | Laser processing method and laser processing device for wafer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4733934B2 (en) | 2004-06-22 | 2011-07-27 | 株式会社ディスコ | Wafer processing method |
| JP5992731B2 (en) | 2012-06-07 | 2016-09-14 | 株式会社ディスコ | Wafer processing method |
-
2015
- 2015-06-23 JP JP2015125640A patent/JP2017011119A/en active Pending
-
2016
- 2016-05-12 TW TW105114745A patent/TW201709302A/en unknown
- 2016-06-07 KR KR1020160070165A patent/KR20170000330A/en not_active Application Discontinuation
- 2016-06-20 CN CN201610443117.6A patent/CN106298651A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013132674A (en) * | 2011-12-27 | 2013-07-08 | Disco Corp | Processing method of wafer and laser beam machining apparatus |
| WO2014080918A1 (en) * | 2012-11-20 | 2014-05-30 | 古河電気工業株式会社 | Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same |
| JP2014116361A (en) * | 2012-12-06 | 2014-06-26 | Disco Abrasive Syst Ltd | Laser processing method and laser processing device for wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201709302A (en) | 2017-03-01 |
| KR20170000330A (en) | 2017-01-02 |
| JP2017011119A (en) | 2017-01-12 |
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Application publication date: 20170104 |