201041028 六、發明說明： 【明戶斤屬支名好冷焉】 發明領域 本發明係有關於一種將貼附有晶圓之黏著膠帶於環狀 框架之半徑方向擴張的黏著膠帶之擴張方法。 、 L ^tr才支冬好J 發明背景 以形成格子狀之分咖定_分而形成枕、lsi等複 數個元件之晶圓以切割裝置或雷射加卫裝置分割成諸個元 件，所分割之元件廣泛地细於行動電話或個人 種電子機器。 切割裝置係以具有非常薄之切刀之切削刀片將晶圓沿 著分割預定線切削，而分割成諸個元件之装置，可將晶圓 確實地分割成諸個元件。 又，雷射加工裝置對晶圓照射具穿透性之波長之雷射 光束，而沿著分割預定線於晶圓内部形成變質層之後， 將支撐有晶圓之黏著膠帶擴張，對晶圓賦與外力，使晶圓 沿著變質層斷裂，而分割成諸個元件(例如參照日本專利公 開公報2004-349623號）。 另一方面，近年來，行動電話或個人電腦等要求更輕 莖化、小型，而要求更薄之元件。將晶圓分割成更薄之元 件之技術開發了稱為所謂之切割後研磨法(Dicing Bef〇re Grinding)之分割技術，並已實用化(例如參照日本專利公開 公報平11-40520號）。 3 201041028 此切割後研磨法係從半導體晶圓之表面沿著分割預定 線，形成預定深度（相當於元件之完成厚度的深度）之分割 溝，之後，將表面形成有分割溝之半導體晶圓之裡面研磨， 使分副溝露出至該裡面，而分割成諸個元件之技術，可將 元件之马·度加工成1〇〇 pm以下。 先行技術文獻 專利文獻 專利文獻1日本專利公開公報2004-349623號 專利文獻2日本專利公開公報平11-40520號 【發明内容】 發明概要 發明欲解決之課題 然而，使用雷射加工裝置，於晶圓之内部沿著分割預 定線，形成變質層，將黏著膠帶擴張，而將晶圓沿著變質 層分割成諸個元件時，於已擴張之黏著膠帶產生鬆弛，而 有於搬送晶圓之際，諸元件接觸而損傷的問題。又，在黏 著膠帶之中央部下垂之狀態下，有無法將藉由黏著膠帶而 以環狀框架支撐之晶圓收容於卡匣的問題。 此問題也可能於以切割後研磨法分割成諸個元件之晶 圓裡面貼附稱為DAF(黏晶薄膜）之切割膠帶用薄膜，進一 步，將DAF貼附於黏著膠帶，以黏著膠帶之擴張，將DAF 對應於諸個元件而分割時產生。 本發明即是鑑於此點而發明者，其目的係提供將貼附 有晶圓之黏著膠帶擴張，可使晶圓沿著變質層斷裂之黏著 201041028 膠帶之擴張方法。 本發明之另一目的係提供藉將黏著膠帶擴張，而可將 貼附在以切割後研磨法分割成諸個元件之晶圓裡面的黏晶 薄膜對應於諸個元件而分割之黏著膠帶之擴張方法。 用以欲解決課題之手段 根據申請專利範圍第1項之發明，提供一種黏著膠帶之 擴張方法，該方法係以包含有用以保持於貼附有具有沿著 形成格子狀之分割預定線而形成於晶圓内部之變質層的晶 圓之黏著膠帶外周配設之環狀框架的框架保持機構、用以 保持貼附於該黏著膠帶之晶圓之晶圓保持台、及用以使該 框架保持機構與該晶圓保持台在待機位置與擴張位置間相 對地移動之移動機構的黏著膠帶擴張裝置將貼附有晶圓之 該黏著膠帶擴張，而使晶圓沿著該變質層斷裂者，其並具 有晶圓載置步驟、黏著膠帶第1柔軟化步驟、黏著膠帶擴張 步驟、黏著膠帶保持步驟、黏著膠帶第2柔軟化步驟、鬆弛 消除步驟及搬出步驟，該晶圓載置步驟係將藉由該黏著膠 帶而以該環狀框架支撐之晶圓載置於該晶圓保持台上，並 以該框架保持機構保持該環狀框架者；該黏著膠帶第1柔軟 化步驟係將該晶圓保持台加熱，而使貼附有晶圓之部份之 該黏著膠帶柔軟者；該黏著膠帶擴張步驟係使前述移動機 構作動，而使該框架保持機構與該晶圓保持台相對地移 動，而定位在前述擴張位置，將該黏著膠帶擴張，而使晶 圓沿著該變質層斷裂者；該黏著膠帶保持步驟係使吸引力 作用於該晶圓保持台，而吸引保持該黏著膠帶者；該黏著 201041028 膠帶第2柔軟化步驟係使該移動機構作動，而使該框架保持 機構及該晶圓保持台相對地移動，而定位於前述待機位 置，並將晶圓外周與該環狀框架間之該黏著膠帶加熱，而 使其柔軟者；該鬆弛消除步驟係於執行該黏著膠帶第2軟化 步驟後，將晶圓之外周與該環狀框架間之該黏著膠帶冷卻， 而消除鬆弛者；該搬出步驟係解除該框架保持機構，並解除 該晶圓保持台之吸引力，而將貼附在該黏著膠帶之晶圓與該 環狀框架一同從該黏著膠帶擴張裝置搬出者。 根據申請專利範圍第2項之發明，提供一種黏著膠帶之 擴張方法，該方法係以包含有用以保持於藉由黏晶薄膜而 貼附有具有形成格子狀之分割溝之晶圓的黏著膠帶外周配 設之環狀框架之框架保持機構、用以保持貼附在該黏著膠 帶之晶圓之晶圓保持台、及用以使該框架保持機構與該晶 圓保持台在待機位置與擴張位置間相對地移動之移動機構 的黏著膠帶擴張裝置將藉由該黏晶薄膜而貼附有晶圓之該 黏著膠帶擴張，而將該分割溝之寬度擴大，並使該黏晶薄 膜沿著該分割溝斷裂者，其具有晶圓載置步驟、黏著膠帶 第1柔軟化步驟、黏著膠帶擴張步驟、黏著膠帶保持步驟、 黏著膠帶第2柔軟化步驟、鬆弛消除步驟、及搬出步驟：該 晶圓載置步驟係將藉由該黏晶薄膜及該黏著膠帶而以該環 狀框架支撐之晶圓載置於該晶圓保持台上，並以該框架保 持機構保持該環狀框架者；該黏著膠帶第1柔軟化步驟係將 該晶圓保持台加熱，而使貼附有晶圓之部份之該黏著膠帶 柔軟者；該黏著膠帶擴張步驟，係使前述移動機構作動， 201041028 * 而使該框架保持機構與該晶圓保持台相對地移動，而定位 於前述擴張位置，將該黏著膠帶擴張，而將該分割溝之寬 度擴大，並使該黏晶薄膜沿著該分割溝斷裂者；該黏著膠 帶保持步驟係使吸引力作用於該晶圓保持台，而吸引保持 該黏著膠帶者；該黏著膠帶第2柔軟化步驟係使該移動機構 作動，而使該框架保持機構與該晶圓保持台相對地移動， 而定位於前述待機位置，並將晶圓外周與該環狀框架間之 該黏著膠帶加熱，而使其柔軟者；該鬆弛消除步驟係於執 ^ 行該黏著膠帶第2柔軟化步驟後，將晶圓外周與該環狀框架 間之該黏著膠帶冷卻，而消除鬆弛者；該搬出步驟係解除 該框架保持機構，並解除該晶圓保持台之吸引力，而將貼 附在該黏著膠帶之晶圓與該環狀框架一同從該黏著膠帶擴 ' 張裝置搬出者。 較佳為，該黏著膠帶由氯乙烯或聚烯構成，在黏著膠 帶第1柔軟化步驟加熱之溫度係40〜100°C，在黏著膠帶第2 柔軟化步驟加熱之溫度係80〜300°C。 發明效果 根據申請專利範圍第1項之發明，將貼附有晶圓之部份 之黏著膠帶加熱，使其柔軟後，將黏著膠帶擴張，而將晶 圓分割成諸個元件，之後，吸引保持貼附有晶圓之部份之 黏著膠帶，以維持分割之狀態，於返回待機位置之際，將 以晶圓及環狀框架所夾持之區域鬆弛的黏著膠帶加熱，而 使黏著膠帶之彈性力回復後，藉冷卻再加上將恢復成原本 狀態之力，黏著膠帶進一步收縮，黏著膠帶形成如鼓般繃 201041028 緊之狀態。結果，可維持相鄰之元件與元件之間隔，而可 解決諸元件接觸而損傷的問題。 根據申請專利範圍第2項之發明，將貼附有晶圓之部份 之黏著膠帶加熱，使其柔軟後，將黏著膠帶擴張，而將黏 晶薄膜對應於諸個元件分割，之後，吸引保持貼附有黏晶 薄膜之部份之黏著膠帶，以維持分割之狀態，於返回待機 位置之際，將以晶圓及環狀框架夾持之區域鬆弛的黏著膠 帶加熱，而使黏著膠帶之彈性力回復後，藉冷卻再加上將 恢復成原本狀態之力，黏著膠帶進一步收縮，黏著膠帶形 成如鼓般繃緊之狀態。結果，可維持相鄰之元件與元件之 間隔，而可解決諸元件接觸而損傷的問題。 再者，根據本發明，由於黏著膠帶之中央部不下垂， 故可易將藉由黏著膠帶而支撐於環狀框架之晶圓收容於卡 匣内。 圖式簡單說明 第1圖係雷射加工裝置之概略立體圖 第2圖係雷射光束照射單元之塊圖。 第3圖係藉由切割膠帶而支撐於環狀框架之晶圓的立 體圖。 第4(A)圖、第4(B)圖係變質層形成方法之說明圖。 第5圖係黏著膠帶擴張裝置之縱截面圖。 第6圖係黏著膠帶擴張步驟之說明圖。 第7圖係黏著膠帶第2柔軟化步驟之說明圖。 第8圖係鬆弛消除步驟之說明圖。 201041028 第9圖係與第5圖類似，係呈分割成諸個元件之晶圓藉 由DAF而貼附於黏著膠帶上之狀態的黏著膠帶擴張裝置之 縱截面圖。 第10圖係黏著膠帶擴張步驟之說明圖。 【實施方式j 用以實施發明之形態 以下，參照圖式，詳細說明本發明之實施形態。第工圖 顯示雷射加工裝置2之概略結構圖。雷射加工裝置2包含有 搭載於靜止基台4上，並於X軸方向延伸之一對導引軌道6。 X軸移動塊8可以由滾珠螺桿1〇及脈衝馬達12構成之χ軸 進給裝備(X軸進給機構）14於加工進給方向、即X軸方向移 動。吸盤台20藉由圓筒狀支撐構件22搭載於χ軸移動塊8上。 吸盤台20具有由多孔性陶瓷等形成之吸附部（吸附吸 盤)2 4。於吸盤台2 0配設有用以夾緊第3圖所示之環狀框架f 之複數個(在本實施形態為4個）夾持器26。 X軸進給裝備14具有沿著導引軌道6,配設於靜止基台4 上之標度16、讀取標度16之X座標值，並配設於χ軸移動塊8 下面之讀取頭18。讀取頭18連接於雷射加工裝置2之控制器。 於靜止基台4上更固定有於γ軸方向延伸之一對導錄 道28。Υ軸移動塊30可以由滾珠螺桿32及脈衝馬達％構成之 Υ軸進給裝備（分度進給裝備)36於γ軸方向移動。 於Υ軸移動塊30形成有於ζ軸方向延伸之—對（圖中僅 顯示1條）導引軌道38。2軸移動塊4〇可以由圖中未示之滾珠 螺桿及脈衝馬達42構成之Ζ軸進給裝備44於2軸方向移動。 9 201041028 46係雷射光束照射單元，雷射光束照射單元46之套48 中收容有之後詳細說明之雷射光束振盪裝備等，於套48之 前端裝設有將雷射光束聚光至要加工之晶圓上之聚光器 (雷射頭)50。 如第2圖之塊圖所示’於雷射光束照射單元46之套48内 配設有雷射光束振盪機構51、雷射光束調變機構53。 雷射光束振盪機構51可使用yaG雷射振盤器或YV04雷 射振邊:器。雷射光束調變機構53具有重複頻率設定機構55、 雷射光束脈衝寬度設定機構57、雷射光束波長設定機構59。 構成雷射光束調變機構53之重複頻率設定裝備55、雷 射光束脈衝寬度設定機構57、及雷射光束波長設定機構59 為眾所皆知之形態者，在本說明書中，省略其詳細說明。 於套48搭載有對準單元(對準機構)52。對準單元52具有 用以拍攝保持在吸盤台20之晶圓W之拍攝單元（拍攝機 構)54 °聚光器5〇及拍攝單元54於乂軸方向排列配置。 如第3圖所示，在為雷射加工裝置2之加工對象之半導 體晶圓W表面，第1切割道S1及第2切割道S2垂直相交形 成’於以第1切割道S1及第2切割道S2劃分之區域形成有許 多元件D。 晶圓W貼附於為黏著膠帶之切割膠帶τ，切割膠帶τ之 外周部貼附於環狀框架F。藉此，晶圓係呈藉由切割膠帶τ 而支撐於環狀框架F之狀態，藉以第1圖所示之夾持器26將 %狀框架F夾緊，而支撐固定於吸盤台20上。 晶圓W吸引保持於吸盤台20上，當環狀框架F以夾持器 10 ^01041028 26夹緊時，施杆田 拍攝所取得 *攝要雷射加工之區域’依以 工之切割道而執行。’ μ樣匹配等圖像處理檢測要雷射加 束後，如第_圖所示，將移動至 用以照射雷射光击 砂勒王 的雷射衫相料元46之料1150所在201041028 VI. Description of the Invention: [Description of the invention] The present invention relates to a method of expanding an adhesive tape in which a pressure-sensitive adhesive tape attached to a wafer is expanded in a radial direction of a ring-shaped frame. L ^ tr only to support the winter good J background of the invention to form a grid of _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The components are widely finer than mobile phones or personal electronic devices. The cutting device cuts the wafer into the components by cutting the wafer with a cutting blade having a very thin cutting blade, and the device is divided into components, and the wafer can be surely divided into components. In addition, the laser processing device irradiates the wafer with a laser beam having a penetrating wavelength, and after forming a metamorphic layer inside the wafer along the dividing line, the adhesive tape supporting the wafer is expanded, and the wafer is The external force is applied to break the wafer along the altered layer, and is divided into elements (for example, refer to Japanese Patent Laid-Open Publication No. 2004-349623). On the other hand, in recent years, mobile phones or personal computers have been demanding lighter stems and smaller ones, and thinner components have been demanded. A technique of dividing a wafer into a thinner component has been developed and has been put into practical use (see, for example, Japanese Laid-Open Patent Publication No. Hei 11-40520). 3 201041028 The post-cutting grinding method forms a dividing groove of a predetermined depth (corresponding to the depth of the completed thickness of the component) from the surface of the semiconductor wafer along a predetermined dividing line, and then forms a semiconductor wafer having a dividing groove on the surface. The inside is ground, and the sub-division groove is exposed to the inside, and the technique of dividing into the components can process the horse's degree to less than 1 pm. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1 Japanese Patent Publication No. 2004-349623 Patent Document 2 Japanese Patent Laid-Open Publication No. Hei 11-40520 SUMMARY OF INVENTION Technical Problem However, a laser processing apparatus is used for a wafer. The inside is formed along the dividing line to form a metamorphic layer, and the adhesive tape is expanded, and when the wafer is divided into the components along the metamorphic layer, the adhesive tape is slackened, and when the wafer is transferred, The problem of damage caused by contact of components. Further, in the state where the center portion of the adhesive tape is drooped, there is a problem that the wafer supported by the annular frame by the adhesive tape cannot be accommodated in the cassette. This problem may also be caused by attaching a film called a DAF (adhesive film) to a wafer which is divided into components by a post-cutting grinding method, and further attaching the DAF to the adhesive tape to expand the adhesive tape. Generated when the DAF is divided corresponding to the components. The present invention has been made in view of the above, and an object of the present invention is to provide a method for expanding an adhesive tape which is formed by expanding an adhesive tape to which a wafer is attached and which can break a wafer along a deteriorated layer. Another object of the present invention is to provide an expansion of an adhesive tape which is adhered to a wafer which is attached to a wafer which is divided into components by a post-cut grinding method by means of expansion of an adhesive tape, and which is divided by the components. method. Means for Solving the Problem According to the invention of claim 1 of the invention, there is provided a method for expanding an adhesive tape, the method comprising: being useful for holding and adhering to a predetermined dividing line formed along a lattice shape a frame holding mechanism of an annular frame disposed on the periphery of the adhesive tape of the wafer of the deteriorated layer inside the wafer, a wafer holding stage for holding the wafer attached to the adhesive tape, and a frame holding mechanism for holding the frame The adhesive tape expansion device of the moving mechanism that moves relative to the wafer holding stage between the standby position and the expanded position expands the adhesive tape to which the wafer is attached, and breaks the wafer along the deteriorated layer. The wafer mounting step, the adhesive tape first softening step, the adhesive tape expanding step, the adhesive tape holding step, the adhesive tape second softening step, the slack eliminating step, and the unloading step, the wafer mounting step is performed by the adhesive a wafer supported by the annular frame is placed on the wafer holding table, and the frame is held by the frame holding mechanism; the adhesive The first softening step of the tape is to heat the wafer holding table to soften the adhesive tape to which the wafer is attached; the adhesive tape expanding step is to activate the moving mechanism to make the frame holding mechanism Moving relative to the wafer holding stage, positioning in the expanded position, expanding the adhesive tape to break the wafer along the altered layer; the adhesive tape holding step is to force the attraction to act on the wafer And the second softening step of the adhesive 201041028 tape causes the moving mechanism to actuate, and the frame holding mechanism and the wafer holding table are relatively moved to be positioned in the standby position, and Heating the adhesive tape between the outer periphery of the wafer and the annular frame to make it soft; the relaxation eliminating step is performed after the second softening step of the adhesive tape is performed between the outer periphery of the wafer and the annular frame The adhesive tape is cooled to eliminate slack; the unloading step releases the frame holding mechanism and releases the attraction of the wafer holding table, and attaches the adhesive to the adhesive The wafer with the ring frame together with the adhesive tape from expanding by unloading means. According to the invention of claim 2, there is provided a method for expanding an adhesive tape, which comprises an adhesive tape outer periphery which is useful for holding a wafer having a lattice-shaped dividing groove by a die-bonding film. a frame holding mechanism for the annular frame, a wafer holding table for holding the wafer attached to the adhesive tape, and a frame holding mechanism and the wafer holding table between the standby position and the expanded position The adhesive tape expansion device of the relatively moving moving mechanism expands the adhesive tape to which the wafer is attached by the die-bonding film, expands the width of the dividing groove, and causes the die-bonding film to follow the dividing groove The fracturer has a wafer mounting step, an adhesive tape first softening step, an adhesive tape expanding step, an adhesive tape holding step, an adhesive tape second softening step, a slack eliminating step, and a carrying out step: the wafer mounting step is a wafer supported by the annular frame by the die-bonding film and the adhesive tape is placed on the wafer holding table, and is held by the frame holding mechanism The annular frame; the first softening step of the adhesive tape is to heat the wafer holding table, and the adhesive tape to which the wafer is attached is soft; the adhesive tape expanding step is to move the aforementioned Actuator actuation, 201041028 * The frame holding mechanism is moved relative to the wafer holding table, and positioned at the expansion position, the adhesive tape is expanded, and the width of the dividing groove is enlarged, and the die film is stretched along The adhesive tape retaining step is such that the attraction force acts on the wafer holding table to attract and hold the adhesive tape; the second softening step of the adhesive tape causes the moving mechanism to act, thereby The frame holding mechanism moves relative to the wafer holding table, and is positioned at the standby position, and heats the adhesive tape between the outer periphery of the wafer and the annular frame to make it soft; the slack eliminating step is performed by After the second softening step of the adhesive tape, the adhesive tape between the outer periphery of the wafer and the annular frame is cooled to eliminate slack; the unloading step is to release the frame Holding means is released and the wafer stage holding the attraction, and the adhesive tape attached to the paste of the wafer frame together with the cyclic expansion 'Double by means unloaded from the adhesive tape. Preferably, the adhesive tape is made of vinyl chloride or polyene, and the temperature at the first softening step of the adhesive tape is 40 to 100 ° C, and the temperature at the second softening step of the adhesive tape is 80 to 300 ° C. . Advantageous Effects of Invention According to the invention of claim 1, the adhesive tape to which the wafer is attached is heated and softened, and then the adhesive tape is expanded to divide the wafer into components, and then sucked and held. Adhesive tape is attached to the wafer to maintain the state of the separation. When returning to the standby position, the adhesive tape which is loosened by the wafer and the ring frame is heated, and the adhesive tape is elasticized. After the force is restored, by the cooling and the force that will return to the original state, the adhesive tape is further shrunk, and the adhesive tape is formed like a drum-like stretch 201041028. As a result, the distance between adjacent elements and elements can be maintained, and the problem of damage due to contact of the elements can be solved. According to the invention of claim 2, the adhesive tape to which the wafer is attached is heated to make it soft, and the adhesive tape is expanded, and the adhesive film is divided corresponding to the components, and then attracted and held. The adhesive tape attached to the part of the adhesive film is used to maintain the state of the separation. When returning to the standby position, the adhesive tape which is loosened by the wafer and the annular frame is heated, and the adhesive tape is elasticized. After the force is restored, the adhesive tape is further contracted by the cooling and the force which will return to the original state, and the adhesive tape is formed into a state of being stretched like a drum. As a result, the distance between adjacent elements and elements can be maintained, and the problem of damage due to contact of the elements can be solved. Further, according to the present invention, since the central portion of the adhesive tape does not sag, the wafer supported by the annular frame by the adhesive tape can be easily accommodated in the cassette. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic perspective view of a laser processing apparatus. Fig. 2 is a block diagram of a laser beam irradiation unit. Figure 3 is a perspective view of a wafer supported by a ring frame by dicing tape. 4(A) and 4(B) are explanatory views of a method of forming a metamorphic layer. Figure 5 is a longitudinal sectional view of the adhesive tape expanding device. Figure 6 is an explanatory view of the step of expanding the adhesive tape. Fig. 7 is an explanatory view of the second softening step of the adhesive tape. Fig. 8 is an explanatory diagram of the slack eliminating step. 201041028 Fig. 9 is a longitudinal cross-sectional view of an adhesive tape expanding device in a state in which a wafer divided into components is attached to an adhesive tape by a DAF, similar to Fig. 5. Figure 10 is an explanatory view of the step of expanding the adhesive tape. [Embodiment j] Embodiments of the present invention Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 shows a schematic block diagram of the laser processing apparatus 2. The laser processing apparatus 2 includes a pair of guide rails 6 that are mounted on the stationary base 4 and extend in the X-axis direction. The X-axis moving block 8 can be moved by the spindle feed device (X-axis feed mechanism) 14 composed of the ball screw 1 〇 and the pulse motor 12 in the machining feed direction, that is, in the X-axis direction. The chuck table 20 is mounted on the spindle moving block 8 by the cylindrical support member 22. The chuck table 20 has an adsorption portion (adsorption chuck) 24 formed of a porous ceramic or the like. A plurality of (four in the present embodiment) grippers 26 for clamping the annular frame f shown in Fig. 3 are disposed on the chuck table 20. The X-axis feed device 14 has a scale 16 along the guide rail 6, which is disposed on the stationary base 4, and an X coordinate value of the read scale 16, and is disposed under the pivot moving block 8 for reading. Head 18. The read head 18 is coupled to a controller of the laser processing apparatus 2. On the stationary base 4, one of the pair of guide tracks 28 extending in the γ-axis direction is fixed. The cymbal moving block 30 can be moved in the γ-axis direction by the cymbal feeding device (index feeding device) 36 composed of the ball screw 32 and the pulse motor %. The x-axis moving block 30 is formed with a pair of (only one is shown) guiding rails 38 extending in the z-axis direction. The two-axis moving block 4〇 can be composed of a ball screw and a pulse motor 42 (not shown). The cymbal feeding device 44 moves in the 2-axis direction. 9 201041028 46 is a laser beam irradiation unit, and a sleeve 48 of the laser beam irradiation unit 46 houses a laser beam oscillating device and the like which will be described later in detail. At the front end of the sleeve 48, a laser beam is condensed to be processed. A concentrator (laser head) 50 on the wafer. As shown in the block diagram of Fig. 2, a laser beam oscillating mechanism 51 and a laser beam modulating mechanism 53 are disposed in the sleeve 48 of the laser beam irradiation unit 46. The laser beam oscillating mechanism 51 can use a yaG laser oscillating disc or a YV04 laser eddy:. The laser beam modulation mechanism 53 has a repetition frequency setting mechanism 55, a laser beam pulse width setting mechanism 57, and a laser beam wavelength setting mechanism 59. The repetition frequency setting device 55, the laser beam pulse width setting mechanism 57, and the laser beam wavelength setting mechanism 59 constituting the laser beam modulation mechanism 53 are well-known, and a detailed description thereof will be omitted in the present specification. . An alignment unit (alignment mechanism) 52 is mounted on the sleeve 48. The aligning unit 52 has a photographing unit (photographing mechanism) 54 for collecting the wafer W held by the chuck table 20, and a photographing unit 54 arranged in the z-axis direction. As shown in FIG. 3, in the surface of the semiconductor wafer W to be processed by the laser processing apparatus 2, the first scribe line S1 and the second scribe line S2 are perpendicularly intersected to form 'the first scribe line S1 and the second cut. The area divided by the track S2 is formed with a plurality of elements D. The wafer W is attached to the dicing tape τ which is an adhesive tape, and the outer peripheral portion of the dicing tape τ is attached to the annular frame F. Thereby, the wafer is supported by the annular frame F by the dicing tape τ, and the holder 26 shown in Fig. 1 clamps the % frame F and is supported and fixed to the suction table 20. The wafer W is attracted and held on the chuck table 20, and when the ring frame F is clamped by the holder 10^01041028 26, the area where the laser processing is performed by the field shot is 'by the cutting path of the work. carried out. After the image processing detection such as μ-matching is laser-added, as shown in the figure _, it will move to the material 1150 of the laser-shirt material element 46 used to illuminate the laser light.
於雷射光束照射:46?經對準之切割道81之-端定位 凡46之聚光器5〇的正下方。 冬，、、;'後j吏吸盤台2〇於X軸方向移動，如第4⑻圖所示， 射光束…、射單元46之聚光器5〇之照射位置到達切割道 S1的另—端後’停止_雷射光权照射，並停止吸盤台 2〇之移動 在此雷射加工時’如第4(A)圖所示，將脈衝雷射光束 之聚光點P定位於晶圓W之厚度方向中間部。結果，如第4(b) 圖所示，於晶圓W之内部形成沿著切割道S1之變質層58。 於晶圓W之内部形成變質層58之雷射加工條件如以下 設定。 光源 :LD激發Q開關Nd : YV04雷射 波長 :l〇64nm 平均輸出 :1W 脈衝寬度 :40ns 重複頻率 :100kHz 聚光點徑 :φ 1 μηι 加工進給速度 :100mm/秒 201041028 如以上進行，當沿著晶圓w之所有切割道81施行變質 層形成步驟後，使吸盤台20旋轉90度，沿著與第1切割道S1 垂直相父之第2切割道S2，施行變質層形成步驟。藉此，可 於晶圓W之内部形成沿著所有切割道$ 1、^2之變質層。 參照第5圖至第8圖，就以黏著膠帶擴張裝置使如此形 成有沿著切割道S1、S2之變質層58之晶圓W斷裂而分割成 諸個元件的本發明第1實施形態之黏著膠帶之擴張方法作 說明。 參照第5圖，顯示呈形成有沿著切割道$ 1、§2之變質層 58之晶圓W搭載於晶圓保持台62上之狀態的黏著膠帶擴張 裝置60之縱截面圖。 晶圓保持台62具有由多孔性陶瓷等形成之吸附部（吸 附吸盤)64。於吸附部64之下方配設有用以將吸附部64加熱 之加熱器66,於加熱n66之下側配設有隔熱材68。晶圓保 持〇62之中心孔連接於真空吸引源72。外筒74配設成圍繞 晶圓保持台62。外筒74可以圖中未示之移動機構，在第5圖所 示之待機位置與第6圖所示之擴張位置間於上下方向移動。 於外筒74安裝有作為用以保持環狀框架F之框架保持 機構之複數個夾持器76。晶®保持台62與外筒74間之空間 78構造成可選擇地與加熱獅或冷卻源82連接。 祝尽發明第1實施形態之黏著膠帶之擴張方法詳 百先’如第5圖所示，將藉由黏著膠帶τ以環狀框 _支撐之晶KW載置於晶圓簡台62上，以作為框架保持 機構之夾持器 12 201041028 動’而不致使㈣力作用於吸附部64。 “ &行以加熱器66將晶圓保持台62之吸附部64加 熱，而使_有晶SJW之部份之黏著膠帶技軟之黏著膠帶之 第1柔軟化步驟。此時之加熱溫度宜為抓刚t之範圍内。 後使外筒74之移動機構作動，而如第6圖所示，將 外同74相對於晶圓保持台62於箭號八方向拉下，而定位於擴 張位置k行將黏著膠帶τ於半徑方向擴張之黏著膠帶擴張 ΟIrradiation of the laser beam: 46? Positioned at the end of the aligned scribe line 81. The concentrator of the 46 is directly below the 〇. Winter,,,; 'The rear j吏 suction table 2〇 moves in the X-axis direction. As shown in Fig. 4(8), the irradiation position of the illuminator 5〇 of the shooting unit 46 reaches the other end of the cutting path S1. After the 'stop_laser light right illumination, and stop the movement of the suction cup 2〇 during this laser processing', as shown in Fig. 4(A), the spot P of the pulsed laser beam is positioned on the wafer W. The middle portion in the thickness direction. As a result, as shown in Fig. 4(b), the altered layer 58 along the scribe line S1 is formed inside the wafer W. The laser processing conditions for forming the altered layer 58 inside the wafer W are set as follows. Light source: LD excitation Q switch Nd : YV04 Laser wavelength: l〇64nm Average output: 1W Pulse width: 40ns Repeat frequency: 100kHz Concentration spot diameter: φ 1 μηι Processing feed rate: 100mm / sec 201041028 As above, when After the morphing layer forming step is performed along all the dicing streets 81 of the wafer w, the chuck table 20 is rotated by 90 degrees, and the morphing layer forming step is performed along the second scribe line S2 which is perpendicular to the first scribe line S1. Thereby, a metamorphic layer along all the scribe lines $1, ^2 can be formed inside the wafer W. Referring to Figs. 5 to 8, the adhesive sheet expansion device is used to break the wafer W thus formed along the altered layers 58 of the dicing streets S1 and S2, and the first embodiment of the present invention is divided into individual elements. The method of expanding the tape is explained. Referring to Fig. 5, a longitudinal cross-sectional view of the adhesive tape expanding device 60 in a state in which the wafer W on which the altered layer 58 along the scribe lines $1 and §2 is formed is mounted on the wafer holding table 62 is shown. The wafer holding stage 62 has an adsorption portion (absorption suction cup) 64 formed of porous ceramic or the like. A heater 66 for heating the adsorption unit 64 is disposed below the adsorption unit 64, and a heat insulating material 68 is disposed below the heating unit n66. The center hole of the wafer holding port 62 is connected to the vacuum suction source 72. The outer cylinder 74 is disposed to surround the wafer holding stage 62. The outer cylinder 74 is movable in the vertical direction between the standby position shown in Fig. 5 and the expanded position shown in Fig. 6 by a moving mechanism (not shown). A plurality of grippers 76 as a frame holding mechanism for holding the annular frame F are attached to the outer cylinder 74. The space 78 between the Crystal® holding station 62 and the outer cylinder 74 is configured to be selectively coupled to a heated lion or cooling source 82. The expansion method of the adhesive tape according to the first embodiment of the present invention is as follows. As shown in FIG. 5, the crystal KW supported by the annular frame _ is placed on the wafer table 62 by the adhesive tape τ. The holder 12 201041028, which is a frame holding mechanism, does not cause the (four) force to act on the adsorption portion 64. "The & row is heated by the heater 66 to the adsorption portion 64 of the wafer holding stage 62, and the first softening step of the adhesive tape of the portion of the splicing tape of the sinter SJW is used. In order to grasp the range of the steel t, the moving mechanism of the outer cylinder 74 is actuated, and as shown in Fig. 6, the outer joint 74 is pulled down relative to the wafer holding table 62 in the direction of the arrow eight, and is positioned in the expanded position. The k-line expands the adhesive tape of the adhesive tape τ in the radial direction.
步驟。藉此’由於可對晶圓W賦與外力，故可沿著 變質層58斷裂，而分割成諸個元件D。 當執行黏著膠帶擴張步驟’將晶圓w分割成諸個元件d 後’使吸引源72作動’使吸引力作用於晶圓保持扣之吸 附部64,而以吸附部64吸龍持呈於半徑方向擴張之狀態 的黏著膠帶T。 接著，使外筒74之移動機構作動，而如第7圖所示，使 外筒74於箭號B方向上升，而定位於待機位置。如第6圖所 示，當暫時在擴張位置擴張之黏著膠帶τ返回待機位置時， 如第7圖所示，於黏著膠帶τ產生鬆弛。 然後，施行以加熱源80將晶圓W之外周與環狀框年ρ間 之黏者膠帶T如箭號C所示加熱而使其柔軟之黏著膠帶第2 柔軟化步驟。藉此，黏著膠帶T之彈性力可回復，而於黏著 膠帶T產生將恢復原本狀態之力。黏著膠帶第2柔軟化步驟 之加熱溫度宜在80〜300°C之範圍内。 執行黏著膠帶第2柔軟化步驟後’如第8圖所示，將加 熱源80切換成冷卻源82，將晶圓W之外周與環狀框架F間之 13 201041028 黏著膠帶T如箭號D所示冷卻。藉此，黏著膠帶τ進一步收 縮’而形成如鼓般繃緊之狀態’而可消除鬆弛。此外，此 冷卻可為常溫之冷卻，或者’在_5C〜20°C間積極地冷卻。 在本實施形態中，由於以吸附部64吸引保持黏著膠帶 T，一面維持貼附有晶圓W之部份之黏著膠帶T的擴張狀 態，一面消除黏著膠帶T之鬆弛，故可維持在相鄰之諸元件 之間隔已擴大之狀態，而可解決諸元件接觸而損傷之問 題。再者’由於黏著膠帶T之中央部不下垂，故可易將藉由 黏著膠帶T而支撐於環狀框架F之晶圓W收容於卡匣。 當施行黏著膠帶T之鬆弛消除步驟後，解除央持器％ 之爽緊，並解除晶圓保持台62之吸引力，而將貼附於黏著 膠可丁之晶圓W與％狀框架ρ一同從黏著膠帶擴張裝置的搬 出。 接著，參照第9圖及第10圖，就本發明第2實施形態之 黏著膠帶之擴張方法作說明。此第2實施形態係將_傳 晶薄膜)_糾_後研私分_諸個元 裡 面，將DAF以黏著膠帶之摅㈣“ 曰曰圓以裡 施形態。 之擴張對應於諸個元件而分割之實 如眾所熟知’此切割後研 分割預定線(切割道)Si、S2，，、 表面沿著step. Thereby, since the wafer W can be given an external force, it can be broken along the altered layer 58 and divided into the elements D. When the adhesive tape expansion step is performed, the wafer w is divided into the components d, and the attraction source 72 is actuated to cause the attraction force to act on the adsorption portion 64 of the wafer holding buckle, and the adsorption portion 64 is held at the radius. Adhesive tape T in a state in which the direction is expanded. Next, the moving mechanism of the outer cylinder 74 is actuated, and as shown in Fig. 7, the outer cylinder 74 is raised in the direction of the arrow B and positioned at the standby position. As shown in Fig. 6, when the adhesive tape τ which is temporarily expanded at the expanded position returns to the standby position, as shown in Fig. 7, the adhesive tape τ is slackened. Then, the adhesive tape T which heats the outer circumference of the wafer W and the ring-shaped frame ρ by the heat source 80 as shown by the arrow C is applied to soften the adhesive tape second softening step. Thereby, the elastic force of the adhesive tape T can be recovered, and the adhesive tape T generates a force which will restore the original state. The heating temperature of the second softening step of the adhesive tape is preferably in the range of 80 to 300 °C. After performing the second softening step of the adhesive tape, as shown in Fig. 8, the heating source 80 is switched to the cooling source 82, and the outer circumference of the wafer W and the annular frame F are 13 201041028 Adhesive tape T as arrow D Show cooling. Thereby, the adhesive tape τ is further contracted to form a state of being stretched like a drum, and the slack can be eliminated. Further, this cooling may be cooling at normal temperature or 'active cooling' between _5C and 20 °C. In the present embodiment, since the adhesive tape T is sucked and held by the adsorption unit 64, the adhesive tape T of the portion to which the wafer W is attached is maintained in an expanded state, and the relaxation of the adhesive tape T is eliminated, so that it can be maintained adjacent to each other. The interval between the components has been expanded, and the problem of damage due to contact of components can be solved. Further, since the central portion of the adhesive tape T does not sag, the wafer W supported by the annular frame F by the adhesive tape T can be easily accommodated in the cassette. After the relaxation step of the adhesive tape T is performed, the tension of the holder is released, and the attraction of the wafer holding table 62 is released, and the wafer W attached to the adhesive is spliced together with the % frame ρ. Remove from the adhesive tape expansion device. Next, a method of expanding an adhesive tape according to a second embodiment of the present invention will be described with reference to Figs. 9 and 10 . In the second embodiment, the _ crystallized film is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The division is as well known as 'this cutting and grinding the dividing line (cutting lane) Si, S2,,, the surface along
之完成厚狀於元件D 評之表面，將保護膠帶側則保持於研附於晶 台，研磨晶圓W之裡面，估…*於研磨裝置之吸盤 諸個元件D之技術。 〃 σ1溝4出至裡面’而分割成 14 201041028 在本實施形態之黏著膠帶之擴張方法，首先，其前步 驟係將DAF貼附於以切割後研磨法分割成諸個元件之晶圓 w之裡面，將DAF貼附於支撐在環狀框架1?之黏著膠帶τ。 接著，將貼附在晶圓W表面之保護膠帶剝離。此狀態顯示 於第9圖。 在本發明第2實施形態中，如第9圖所示，將藉由D a F 8 4 及黏著膠帶T以環狀框架F支撐之晶圓W載置於晶圓保持台 〇 62上，以作為框架保持機構之夾持器％夾緊環狀框架F。此 外，此時，與第1實施形態同樣地，不使吸引力作用於晶圓 保持台62之吸附台64。 、 接著，施行以加熱器66將晶圓保持台62之吸附部64加 熱，而使貼附有晶圓W之部份之黏著膠帶丁柔軟之黏著膠帶 第1柔軟化步驟。此時之加熱溫度與第丨實施形態同樣地， 宜為40〜100°C之範圍内。 然後，如第10圖所示，使外筒74之移動機構作動，將 〇 外筒74相對於晶圓保持台62拉下至下方，而定位於擴張位 置，施行將黏著膠帶T於半徑方向擴張之黏著膠帶擴張步 驟。藉此’由於外力作用於DAF84，故晶圓W之分割溝之 寬度擴大，且DAF84對應於諸個元件D而斷裂。 之後，施行使吸引力作用於晶圓保持台62，使吸引力 作用於貼附有DAF84之部份之黏者膠帶τ，而吸引保持呈擴 張狀態之黏著膠帶T的黏著膠帶保持步驟。 本實施形態以下之步驟由於與參照第7圖及第8圖而說 明之第1實施形態之黏著膠帶第2柔軟化步驟、鬆弛消除步 15 201041028 驟、搬出步驟相同，故為避免重複，而省略其說明。 此外，第1實施形態之黏著膠帶之擴張方法亦可應用於 將DAF貼附於晶圓W之裡面，並將DAF貼附於黏著膠帶T 上，而DAF也隨著以黏著膠帶擴張步驟沿著晶圓W之變質 層58之斷裂而沿著變質層58斷裂的變形例。 I：圖式簡單說明3 第1圖係雷射加工裝置之概略立體圖 第2圖係雷射光束照射單元之塊圖。 第3圖係藉由切割膠帶而支撐於環狀框架之晶圓的立 體圖。 第4(A)圖、第4(B)圖係變質層形成方法之說明圖。 第5圖係黏著膠帶擴張裝置之縱截面圖。 第6圖係黏著膠帶擴張步驟之說明圖。 第7圖係黏著膠帶第2柔軟化步驟之說明圖。 第8圖係鬆弛消除步驟之說明圖。 第9圖係與第5圖類似，係呈分割成諸個元件之晶圓藉 由DAF而貼附於黏著膠帶上之狀態的黏著膠帶擴張裝置之 縱截面圖。 第10圖係黏著膠帶擴張步驟之說明圖。 【主要元件符號說明】 2.. .雷射加工裝置 4.. .靜·止基台 6.. .導引軌道 8.. .X軸移動塊 10"滾珠螺桿 12."脈衝馬達 14…X軸進給裝備 16...標度 16The finish is thicker on the surface of the component D, and the side of the protective tape is kept on the crystal table, and the inside of the wafer W is polished, and the technique of the components D of the chuck of the polishing device is evaluated. σ σ1 groove 4 is out to the inside' and is divided into 14 201041028. In the method for expanding the adhesive tape of the present embodiment, first, the previous step is to attach the DAF to the wafer which is divided into the components by the post-cut grinding method. Inside, the DAF is attached to the adhesive tape τ supported on the annular frame 1? Next, the protective tape attached to the surface of the wafer W is peeled off. This status is shown in Figure 9. In the second embodiment of the present invention, as shown in Fig. 9, the wafer W supported by the annular frame F by the D a F 8 4 and the adhesive tape T is placed on the wafer holding table 62. The holder as the frame holding mechanism % clamps the annular frame F. Further, at this time, similarly to the first embodiment, the suction force is not applied to the adsorption stage 64 of the wafer holding stage 62. Next, the adsorption unit 64 of the wafer holding stage 62 is heated by the heater 66, and the adhesive tape which is attached to the portion of the wafer W is softened by the first softening step. The heating temperature at this time is preferably in the range of 40 to 100 ° C as in the case of the third embodiment. Then, as shown in Fig. 10, the moving mechanism of the outer cylinder 74 is actuated, and the outer cylinder 74 is pulled down to the lower side with respect to the wafer holding table 62, and positioned in the expanded position, and the adhesive tape T is expanded in the radial direction. Adhesive tape expansion step. Thereby, since the external force acts on the DAF 84, the width of the dividing groove of the wafer W is enlarged, and the DAF 84 is broken corresponding to the respective elements D. Thereafter, the application of the attraction force to the wafer holding table 62 causes the attraction force to act on the adhesive tape τ to which the portion of the DAF 84 is attached, and attracts the adhesive tape holding step of the adhesive tape T which is maintained in the expanded state. The following steps of the present embodiment are the same as the second softening step, the slack eliminating step 15 201041028, and the unloading step of the adhesive tape according to the first embodiment described with reference to FIGS. 7 and 8, so that the duplication is avoided and the explanation is omitted. Its description. Further, the method of expanding the adhesive tape according to the first embodiment can also be applied to attaching the DAF to the inside of the wafer W, and attaching the DAF to the adhesive tape T, and the DAF is also followed by the step of expanding the adhesive tape. A modification in which the altered layer 58 of the wafer W is broken along the altered layer 58. I: Brief description of the drawing 3 Fig. 1 is a schematic perspective view of a laser processing apparatus. Fig. 2 is a block diagram of a laser beam irradiation unit. Figure 3 is a perspective view of a wafer supported by a ring frame by dicing tape. 4(A) and 4(B) are explanatory views of a method of forming a metamorphic layer. Figure 5 is a longitudinal sectional view of the adhesive tape expanding device. Figure 6 is an explanatory view of the step of expanding the adhesive tape. Fig. 7 is an explanatory view of the second softening step of the adhesive tape. Fig. 8 is an explanatory diagram of the slack eliminating step. Fig. 9 is a longitudinal cross-sectional view showing an adhesive tape expanding device in a state in which a wafer divided into components is attached to an adhesive tape by a DAF, similarly to Fig. 5. Figure 10 is an explanatory view of the step of expanding the adhesive tape. [Description of main component symbols] 2.. Laser processing device 4.. Static stop base 6. Guide rail 8.. X-axis moving block 10" Ball screw 12. "Pulse motor 14... X-axis feed equipment 16...scale 16
201041028 18·._讀取頭 20.. .吸盤台 22.. .圓筒狀支擇構件 24.. .吸附部 26·.·夾持器 28.. .導引執道 30.. .Υ軸移動塊 32…滾珠螺桿 34…脈衝馬達 36…Υ軸進給裝備 38…導引軌道 40.. . Ζ軸移動塊 42…脈衝馬達 44.. . Ζ軸進給裝備 46.. .雷射光束照射單元 48…套 50.. .聚光器 51.. .雷射光束振盪機構 52.. .對準單元 53.. .雷射光束調變機構 54.. .拍攝單元 55.. .重複頻率設定機構 57.. .雷射光束脈衝寬度設定機構 58.. .變質層 59.. .雷射光束波長設定機構 60.. .黏著膠帶擴張裝置 62…晶圓保持台 64.. .吸附部 66.. .加熱器 68.. .隔熱材 70…中心孑L 72.. .真空吸引源 74.. .外筒 76.··炎持器 78.. .空間 80.. .加熱源 82.. .冷卻源 84.. .DAF(黏晶薄膜） A，B，C...前號 D."元件 F...環狀框架 Ρ·_.聚光點 51.. .第1切割道 S2…第2切割道 Τ...切割膠帶 ΜΛ..晶圓 17201041028 18·._Reading head 20... Suction table 22.. Cylindrical support member 24... Adsorption unit 26·.·Clamp 28.. Guide channel 30.. .Υ Axle moving block 32...ball screw 34...pulse motor 36... Υ axis feed device 38...guide track 40.. Ζ axis moving block 42...pulse motor 44.. Ζ axis feed device 46.. . Beam irradiation unit 48...set 50.. concentrator 51.. laser beam oscillating mechanism 52.. aligning unit 53.. laser beam modulation mechanism 54.. shooting unit 55.. repeat Frequency setting mechanism 57.. Laser beam pulse width setting mechanism 58.. Metamorphic layer 59.. Laser beam wavelength setting mechanism 60.. Adhesive tape expansion device 62... Wafer holding station 64.. 66.. .Heater 68.. .Insulation material 70...Center 孑L 72.. . Vacuum suction source 74.. Outer tube 76.··Inflammation device 78.. Space 80.. Heating source 82 .. . Cooling source 84.. . DAF (adhesive film) A, B, C... the first D. " element F... ring frame Ρ · _. spotlight point 51.. . Cutting Road S2... 2nd Cutting Road Τ... Cutting Tape ΜΛ.. Wafer 17