CN102746802A - Method for machining adhesion belt and wafer - Google Patents
Method for machining adhesion belt and wafer Download PDFInfo
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- CN102746802A CN102746802A CN2012101070515A CN201210107051A CN102746802A CN 102746802 A CN102746802 A CN 102746802A CN 2012101070515 A CN2012101070515 A CN 2012101070515A CN 201210107051 A CN201210107051 A CN 201210107051A CN 102746802 A CN102746802 A CN 102746802A
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- wafer
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- cutting
- shaped frame
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000003754 machining Methods 0.000 title abstract 2
- 238000005520 cutting process Methods 0.000 claims description 64
- 238000003672 processing method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000011218 segmentation Effects 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000003068 static effect Effects 0.000 abstract description 10
- 230000005611 electricity Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 98
- 238000001514 detection method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Abstract
The present invention provides a method for machining an adhesion belt and a wafer using the adhesion belt, wherein the adhesion belt can inhibit static electricity, and is used for supporting the wafer, and the wafer forms a plurality of devices in a manner of being divided by a predetermined separation line on the surface of the wafer, and the wafer is characterized by comprising an adhesion layer laminated on the surface of the thin sheet shaped substrate, and an anti-electrification layer laminated at the back side of the thin sheet shaped substrate.
Description
Technical field
Employed adhesion zone and the wafer processing method that uses this adhesion zone when the present invention relates to that wafer applied external force.
Background technology
Unicircuit), LSI (Large Scale Integration: large-scale integrated circuit), LED (Light-Emitting Diode: a plurality of devices and demarcate by cutting apart preset lines such as photodiode) wafer such as silicon wafer, sapphire wafer is formed with IC (Integrated Circuit: on the surface; Utilize processing unit (plant) that said wafer is divided into device one by one, the device that is partitioned into extensively is utilized in the various electricinstallations such as mobile telephone, PC.
(dicing) method is cut in the extensive employing of cutting apart of wafer, and this cutting method adopts the topping machanism that is called as cutting machine (dicer).In cutting method; Cutting wafer on one side with the high speed rotating of about 30000rpm cuts wafer on one side through making cutting tool; Wafer is divided into device one by one, and said cutting tool utilizes metal or resin abrasive particles such as diamond to be solidified and form the thickness of about 30 μ m.
On the other hand; Proposing in recent years (for example has following method; With reference to japanese kokai publication hei 10-305420 communique): through forming laser processing groove with respect to the pulse laser beam that wafer has absorbefacient wavelength to wafer illumination; Along this laser processing groove wafer is applied external force with the fracture device and break off wafer, thereby wafer is divided into device one by one.
Another embodiment as the working method of using laser beam; Also proposing (for example has following method; With reference to No. 3408805 communique of Japanese Patent): the inside that will be positioned at the wafer corresponding with respect to the focal point of laser beam that wafer has a wavelength (for example 1064nm) of perviousness with cutting apart preset lines;, utilize the fracture device that wafer is applied external force then and break off wafer at the inner metamorphic layer that forms of wafer along cutting apart the preset lines illuminating laser beam, thereby wafer is divided into device one by one.
Compare with the cutting method of utilizing cutting machine to realize; Utilize the laser processing groove that laser processing device realizes or the formation of metamorphic layer can accelerate process velocity, even and also can process with comparalive ease by the wafer that sapphire (Sapphire) or the high material of silit hardness such as (SiC) constitute.
And 10 μ m therefore with respect to the situation of utilizing cutting method to process, can increase the amount of obtaining of the device of each piece wafer with inferior very narrow width owing to can form working groove or metamorphic layer for example.
In the wafer process of utilizing laser processing device to carry out, wafer is pasted on cutting belt, the peripheral part of said cutting belt is pasted on ring-shaped frame, thus with ring-shaped frame across the cutting belt supporting wafer.Then, illuminating laser beam under the state of the chuck table that wafer is remained in laser processing device across the cutting belt suction.
Patent documentation 1: japanese kokai publication hei 10-305420 communique
Patent documentation 2: No. 3408805 communique of Japanese Patent
But; When using extension fixture (cutting device) to break off wafer; The adhesion zone of pasting wafer applies external force along the radial direction expansion to wafer; Therefore when adhesion zone is expanded because of the friction of adhesion zone and extension fixture at adhesion zone generation static, the function that exists device is destroyed, the chip when perhaps breaking off wafer is attached to device and makes the problem of the downgrade of device.
Summary of the invention
The present invention accomplishes in view of the premises just, and its purpose is to provide a kind of wafer processing method that can suppress the adhesion zone of generation of static electricity and use this adhesion zone.
According to technical scheme 1 described invention, a kind of adhesion zone is provided, said adhesion zone supporting wafer, said wafer are formed with a plurality of devices on the surface by cutting apart preset lines with demarcating, and said adhesion zone is characterised in that said adhesion zone has: laminar base material; Adhesive coating, said adhesive coating is layered in the surface of said laminar base material; With anti-charged layer, said anti-charged layer is layered in the back side of said laminar base material.
According to technical scheme 2 described inventions; A kind of wafer processing method is provided, and said wafer processing method is that wafer is divided into the method for device one by one, and said wafer is formed with a plurality of devices on the surface by cutting apart preset lines with demarcating; Said wafer processing method is characterised in that; Said wafer processing method has: integrated operation, in this integrated operation, with wafer storage this peristome in ring-shaped frame with the peristome that is used to take in wafer; Technical scheme 1 described adhesion zone is pasted on wafer and said ring-shaped frame and is integrally formed as wafer cell, use the ring-shaped frame supporting wafer; Cut apart starting point and form operation, cut apart starting point at this and form in the operation, before or after said integrated operation, cut apart preset lines along wafer said and form and cut apart starting point; With the wafer segmentation process; In this wafer segmentation process; Cut apart after starting point forms operation having implemented said integrated operation and said, across said adhesion zone wafer is applied external force, thereby wafer is divided into device one by one along being formed with the said said preset lines of cutting apart of cutting apart starting point.
Because adhesion zone of the present invention is formed with anti-charged layer at the back side of laminar base material; Therefore; To be formed with the wafer of cutting apart starting point and be pasted on adhesion zone along cutting apart preset lines, cut apart wafer through this adhesion zone is applied external force along the radial direction expansion to wafer then, even adopt aforesaid way; Also can be suppressed at the static that adhesion zone produces, function that can abatement device is destroyed and cuts apart that chip adheres to and problem that the quality of device is reduced.
Description of drawings
Fig. 1 is the stereographic map of laser processing device.
Fig. 2 is the stereographic map of the integrated operation of explanation.
Fig. 3 is the skeleton diagram of laser beam irradiation unit.
Fig. 4 is that the stereographic map that starting point forms operation is cut apart in expression, in this operation, along the laser processing groove that starting point is cut apart in preset lines formation conduct of cutting apart of wafer.
Fig. 5 is the stereographic map of state that is illustrated in the back side spraying static remover of adhesion zone.
Fig. 6 is the stereographic map of extension fixture (cutting device).
(A) of Fig. 7 and (B) be the longitudinal section of expression wafer segmentation process.
Label declaration
T: cutting belt (adhesion zone);
F: ring-shaped frame;
2: laser processing device;
11: wafer;
13: cut apart preset lines (spacing track);
15: device;
28: chuck table;
34: laser beam irradiation unit;
36: condensing apparatus;
74: laser processing groove;
80: extension fixture (cutting device);
82: the framework retaining member;
84: the band expansion;
90: the expansion drum;
98: cylinder.
Embodiment
Below, with reference to accompanying drawing embodiment of the present invention is described at length.Fig. 1 representes to be fit to the summary structure iron of laser processing device 2 of the wafer processing method of embodiment of the present invention.Laser processing device 2 comprises the 1st slide block 6, and said the 1st slide block 6 is can be equipped on stationary base 4 along the mode that X-direction moves.
It is that X-direction moves along pair of guide rails 14 in the processing direction of feed that the 1st slide block 6 utilizes processing feed unit 12, and said processing feed unit 12 is made up of ball-screw 8 and pulse motor 10.
The 2nd slide block 16 is carrying on the 1st slide block 6 along the mode that Y direction moves.That is it is that Y direction moves along pair of guide rails 24 in index direction that the 2nd slide block 16 utilizes index feed unit 22, and said index feed unit 22 is made up of ball-screw 18 and pulse motor 20.
Chuck table 28 is equipped on the 2nd slide block 16 across cylinder bearing unit 26, and chuck table 28 can utilize processing feed unit 12 to move in X-direction and Y direction with index feed unit 22.Be provided with clamping element 30 at chuck table 28, said clamping element 30 clamps the wafer that suction remains on chuck table 28.
Erect in stationary base 4 and to be provided with column 32, at this column 32 housing 35 is installed, said housing 35 is used to take in laser beam irradiation unit 34.As shown in Figure 3, laser beam irradiation unit 34 comprises: laser oscillator 62, its vibration send YAG laser or YVO4 laser; Repetition rate setting element 64; PW adjustment member 66; Energy adjustment member 68.
Utilize the energy adjustment member 68 of laser beam irradiation unit 34 to be adjusted into of speculum 70 reflections of the pulse laser beam of predetermined power, be held wafer 11 through optically focused with object lens 72 optically focused and irradiation then in chuck table 28 by the condensing apparatus 36 of the end that is installed in housing 35.
Be equipped with shooting member 38 at the terminal part of housing 35, said shooting member 38 and condensing apparatus 36 align along X-direction, and said shooting member 38 is used to detect the zone that should carry out laser processing.Shooting member 38 comprises common imaging apparatus such as CCD, and said imaging apparatus utilizes visible light that the process zone of semiconductor wafer is made a video recording.
The picture signal that is obtained by the shooting of shooting member 38 also is transfused to the input interface 50 of unit 40.On the other hand, the output interface 52 of slave controller 40 is to output waves such as pulse motor 10, pulse motor 20, laser beam irradiation unit 34.
As shown in Figure 2, be formed with many spacing tracks (cutting apart preset lines) 13 on surperficial 11a quadrature ground as the wafer 11 of the processing object of laser processing device 2, be formed with device 15 in each zone that marks off by orthogonal spacing track 13.Wafer 11 has at its surperficial 11a: device area 17, and it is formed with a large amount of device 15; With periphery remaining area 19, it is around device area 17.
The back side 11b of wafer 11 sticks on the cutting belt T as adhesion zone, and the peripheral part of cutting belt T sticks on ring-shaped frame F, thereby forms wafer cell 21.Cutting belt T constitutes through on the thin slice base material of SE etc., setting the adhesive coating that is formed by for example acrylic resin.
In wafer cell 21, wafer 11 is in the state that is supported by ring-shaped frame F across cutting belt T, and when laser processing, wafer 11 is kept by chuck table 28 suctions across cutting belt T, utilizes clamping element 30 that ring-shaped frame F is fixedly clamped.
Next, to Fig. 7, the wafer processing method of embodiment of the present invention is described at length with reference to figure 4.At first; Process zone with 38 pairs of wafers 11 of shooting member is made a video recording; And carry out picture processing such as pattern match; Thereby implement the calibration of laser beam irradiation position, said picture processing is used for the condensing apparatus 36 of the laser beam irradiation unit 34 of illuminating laser beam is carried out contraposition with the spacing track 13 that extends along the 1st direction.Then, chuck table 28 is revolved turn 90 degrees, implement along the calibration of spacing track 13 with the condensing apparatus 36 of the 2nd direction extension.
After above-mentioned calibration procedure is accomplished; In the 1st embodiment of working method of the present invention; As shown in Figure 4; Begin to shine the pulse laser beam that has absorbefacient wavelength with respect to wafer 11 through the end of condensing apparatus 36, chuck table 28 is moved with predetermined processing speed of feed along the direction shown in the arrow X1, form as the laser processing groove 74 of cutting apart starting point along spacing track 13 from the spacing track that should process 13 of wafer 11.
Forming as after cutting apart the laser processing groove 74 of starting point along all spacing tracks 13 that extend in the 1st direction, chuck table 28 is revolved turning 90 degrees, forming same laser processing groove 74 along all spacing tracks 13 that extend in the 2nd direction then.
Shown in the laser processing technology condition example of the 1st embodiment is for example following.
Light source: YAG pulsed laser
Wavelength: 355nm (triple-frequency harmonics of YAG laser)
Average output: 3.5W
Optically focused spot diameter: 10 μ m
Repetition rate: 100kHz
Processing speed of feed: 100mm/s
The preset lines 13 cut apart along wafer forms the starting point of cutting apart of cutting apart starting point and forms operation and also can use the laser beam that has a wavelength of perviousness with respect to wafer 11 to implement.In the 2nd embodiment; Make on one side the internally 13 irradiated with pulse laser bundles of focal point alignment wafer 11 that have the pulse laser beam of perviousness with respect to wafer 11 from condensing apparatus 36 along spacing track; Chuck table 28 is moved with predetermined speed of feed along the direction shown in the arrow X1 among Fig. 4, thereby form metamorphic layer in the inside of wafer 11.
When along all spacing tracks 13 that extend in the 1st direction wafer 11 is inner form metamorphic layers after, make chuck table 28 rotate 90 degree, along forming same metamorphic layer in that wafer is inner at all spacing tracks 13 that extend with orthogonal the 2nd direction of the 1st direction.This metamorphic layer forms with the reharden form of layer of fusing.
Shown in laser processing technology condition in the 2nd embodiment is for example following.
Light source: YAG pulsed laser
Wavelength: 1064nm
Average output: 1.0W
Optically focused spot diameter: 1 μ m
Repetition rate: 100kHz
Processing speed of feed: 50mm/s
After the cutting apart starting point and form operation and implement of the 1st embodiment or the 2nd embodiment, as shown in Figure 5, utilize nozzle 76 to spray static remover 78, thereby form anti-charged layer at the back side of cutting belt T from the rear side of cutting belt T.
As static remover 78, can use " static is removed spraying SB-8 " that provide by シ ョ one ヮ グ ロ one Block Co., Ltd..In addition, the injection towards the rear side of cutting belt T of this static remover 78 also can be carried out before forming operation implementing to cut apart starting point.
When form at wafer 11 cut apart the cutting apart starting point and form operation and implement of starting point after; Implement the wafer segmentation process; In this wafer segmentation process, utilize extension fixture shown in Figure 6 (cutting device) 80 with wafer 11 along being divided into chip one by one as the laser processing groove of cutting apart starting point 74.
Extension fixture 80 shown in Figure 6 has: framework retaining member 82, and it keeps ring-shaped frame F; With band expansion 84, its expansion cutting belt T, said cutting belt T is assemblied in ring-shaped frame F, and this ring-shaped frame F is kept by framework retaining member 82.
And, carry to put carrying the ring-shaped frame F that puts on the face 86a and utilize clamping element 88 to be fixed in framework holding member 86.The framework retaining member 82 that so constitutes is supported to and can utilizes band expansion 84 to move along the vertical direction.
Band expansion 84 has expansion drum 90, and said expansion drum 90 is provided in the inboard of ring-shaped frame holding member 86.The upper end of expansion drum 90 is by lid 92 sealings.The internal diameter of this expansion drum 90 is littler and bigger than the external diameter of wafer 11 than the internal diameter of ring-shaped frame F, and said wafer 11 sticks on the cutting belt T that is installed on ring-shaped frame F.
The drive member 96 that is made up of a plurality of cylinders 98 moves ring-shaped frame retaining member 86 along the vertical direction between reference position and expanded position; Said reference position is that carrying of ring-shaped frame retaining member 86 put the position that face 86a and the surface of the lid 92 of the upper end that is positioned at expansion drum 90 are in roughly the same height, and said expanded position is to carry to put face 86a leans on the below predetermined amount than the upper end of expansion drum 90 position.
Utilize the segmentation process of the wafer 11 of extension fixture 80 enforcements that constitute as described above with reference to figure 7 explanations.Shown in Fig. 7 (A), will carry across the ring-shaped frame F of cutting belt T supporting wafer 11 to put and put on the face 86a, and utilize clamping element 88 to be fixed in framework holding member 86 carrying of framework holding member 86.At this moment, framework holding member 86 is positioned in the reference position that the upper end of putting face 86a and expansion drum 90 its year is in roughly the same height.
Then, drive cylinder 98, framework holding member 86 is dropped to the expanded position shown in (B) of Fig. 7.Thus, owing to being fixed on the ring-shaped frame F decline that carrying of framework holding member 86 put on the face 86a, therefore, the cutting belt T that is installed on ring-shaped frame F also mainly expands along radial direction with the last ora terminalis butt of expansion drum 90.
Consequently, the wafer 11 that is pasted on cutting belt T is acts on force-to-stretch radially.When so wafer 11 being when acting on force-to-stretch radially, the laser processing groove 74 that forms along spacing track 13 becomes cuts apart starting point, and wafer 11 is broken off along laser processing groove 74, and is split into semi-conductor chip (device) 15 one by one.
Be formed with under the situation of the 2nd embodiment as the metamorphic layer of cutting apart starting point in the inside of wafer 11; When wafer 11 being when acting on force-to-stretch radially; Because the metamorphic layer intensity that forms along spacing track 13 is lowered; Therefore this metamorphic layer becomes and cuts apart starting point, and wafer 11 is broken off along metamorphic layer, and is split into semi-conductor chip (device) 15 one by one.
[embodiment 1]
As shown in Figure 2, across cutting belt T supporting silicon wafer 11, form metamorphic layer in the inside of cutting apart preset lines with ring-shaped frame F according to the interval illuminating laser beam of 1.0mm, mark off a plurality of squares of 1.0mm * 1.0mm, expand cutting belt T then.The back side of friction cuttings band T, with the carried charge of wafer 11 with disperse and attached to around the number of the chip of size more than 5 μ m compare, obtained the result shown in the table 1.
[table 1]
Can be clear and definite by table 1, the adhesion zone of the present invention for the back side at cutting belt T has anti-charged layer compares with the existing adhesion zone of not preventing charged layer, and the carried charge of wafer significantly reduces.And the number of the number of the chip of chip surface and the chip of belt surface compares with existing adhesion zone, also significantly reduces.
Because cutting belt (adhesion zone) T of this embodiment is formed by laminar base material, the adhesive coating and the anti-charged layer that is coated in the back side of laminar base material that are provided in the surface of laminar base material; Therefore; When the band shown in (B) that carry out Fig. 7 is expanded; Even be formed on the anti-charged layer and lid 92 sliding contacts of expanding drum 90 at the back side of cutting belt T; Also can be suppressed at the static that cutting belt T produces, thus can be when implementing segmentation process the function of abatement device 15 be destroyed that chip when breaking off with wafer 11 adheres to and problem that the quality of device 15 is reduced.
Claims (2)
1. adhesion zone, said adhesion zone supporting wafer, said wafer are formed with a plurality of devices on the surface by cutting apart preset lines with demarcating,
Said adhesion zone is characterised in that,
Said adhesion zone has:
Laminar base material;
Adhesive coating, said adhesive coating is layered in the surface of said laminar base material; With
Anti-charged layer, said anti-charged layer is layered in the back side of said laminar base material.
2. wafer processing method, said wafer processing method is that wafer is divided into the method for device one by one, said wafer is formed with a plurality of devices on the surface by cutting apart preset lines with demarcating,
Said wafer processing method is characterised in that,
Said wafer processing method has:
Integrated operation; In this integrated operation; With wafer storage this peristome at ring-shaped frame with the peristome that is used to take in wafer; The described adhesion zone of claim 1 is pasted on wafer and said ring-shaped frame and is integrally formed as wafer cell, thereby utilize ring-shaped frame to come supporting wafer;
Cut apart starting point and form operation, cut apart starting point at this and form in the operation, before or after said integrated operation, cut apart preset lines along wafer said and form and cut apart starting point; With
The wafer segmentation process; In this wafer segmentation process; Cut apart after starting point forms operation having implemented said integrated operation and said, across said adhesion zone wafer is applied external force, thereby wafer is divided into device one by one along being formed with the said said preset lines of cutting apart of cutting apart starting point.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011093862A JP5912283B2 (en) | 2011-04-20 | 2011-04-20 | Processing method of adhesive tape and wafer |
| JP2011-093862 | 2011-04-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102746802A true CN102746802A (en) | 2012-10-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101070515A Pending CN102746802A (en) | 2011-04-20 | 2012-04-12 | Method for machining adhesion belt and wafer |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5912283B2 (en) |
| CN (1) | CN102746802A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957835A (en) * | 2016-07-18 | 2016-09-21 | 浙江钱江摩托股份有限公司 | Cutting method for chip |
| CN108115853A (en) * | 2016-11-29 | 2018-06-05 | 三星钻石工业股份有限公司 | The disconnection method of brittle substrate and disconnection device |
| CN110828352A (en) * | 2018-08-07 | 2020-02-21 | 福科胶研股份有限公司 | Wafer bearing method |
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| WO2010024174A1 (en) * | 2008-08-27 | 2010-03-04 | 日東電工株式会社 | Adhesive tape or sheet |
| CN101887841A (en) * | 2009-05-11 | 2010-11-17 | 株式会社迪思科 | Adhesive tape expansion method |
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| JPS58153346A (en) * | 1982-03-05 | 1983-09-12 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JPH0620442U (en) * | 1991-02-26 | 1994-03-18 | モダン・プラスチツク工業株式会社 | Adhesive sheet for semiconductor wafer |
| JP4824964B2 (en) * | 2005-07-26 | 2011-11-30 | 電気化学工業株式会社 | Adhesive sheet and electronic component manufacturing method |
| JP4024263B2 (en) * | 2005-10-06 | 2007-12-19 | 電気化学工業株式会社 | Adhesive sheet and electronic component manufacturing method using the same. |
| CN101506948B (en) * | 2006-09-12 | 2012-12-12 | 日东电工株式会社 | Dicing/die bonding film |
| JP5013844B2 (en) * | 2006-12-19 | 2012-08-29 | グンゼ株式会社 | Substrate film for dicing |
| US20110014443A1 (en) * | 2008-03-10 | 2011-01-20 | The Furukawa Electric Co., Ltd | Adhesive tape for electronic component fabrication |
| JP5340806B2 (en) * | 2009-05-21 | 2013-11-13 | 株式会社ディスコ | Laser processing method of semiconductor wafer |
| JP5495695B2 (en) * | 2009-09-30 | 2014-05-21 | 株式会社ディスコ | Wafer processing method |
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| CN1496581A (en) * | 2002-01-11 | 2004-05-12 | 株式会社迪思科 | Semiconductor wafer protective member and semiconductor wafer grinding method |
| WO2010024174A1 (en) * | 2008-08-27 | 2010-03-04 | 日東電工株式会社 | Adhesive tape or sheet |
| CN101887841A (en) * | 2009-05-11 | 2010-11-17 | 株式会社迪思科 | Adhesive tape expansion method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105957835A (en) * | 2016-07-18 | 2016-09-21 | 浙江钱江摩托股份有限公司 | Cutting method for chip |
| CN108115853A (en) * | 2016-11-29 | 2018-06-05 | 三星钻石工业股份有限公司 | The disconnection method of brittle substrate and disconnection device |
| CN108115853B (en) * | 2016-11-29 | 2021-05-04 | 三星钻石工业股份有限公司 | Method and apparatus for breaking brittle material substrate |
| CN110828352A (en) * | 2018-08-07 | 2020-02-21 | 福科胶研股份有限公司 | Wafer bearing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5912283B2 (en) | 2016-04-27 |
| JP2012227368A (en) | 2012-11-15 |
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