JPS58153346A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To improve the good product rate of pellets on a tape and to improve the reliability by employing an adhesive tape, on which static electricity generation preventive agent is coated on the back surface, thereby preventing the charging of the tape due to friction with a lifting rod. CONSTITUTION:Static electricity generation preventive agent 18 is coated on the back surface of the adhesive surface 17 of an adhesive tape 16. Thus, frictional static electricity produced when a rod 8 is lifted from the back surface of a tape by radially expanding the tape can be rapidly removed with the coated film 18. Accordingly, the oxidized film of a semiconductor chip on the tape is not damaged, thereby improving the yield and the reliability of the pellet to be removed.

Description

[Detailed Description of the Invention] ζO 弗明 deals with the manufacturing method of semiconductor devices, especially when it comes to static electricity, and the most important method for manufacturing conductor devices. be.

Semiconductor devices are generally made by forming semiconductor pellets on a conductor wafer at once, and then dividing the wafer into individual semiconductor pellets after completion.

For example, semiconductor pellets (hereinafter simply referred to as pellets) (hereinafter simply referred to as pellets) (
1) A large number of cow wI bodies (hereinafter simply referred to as quaha) (!It-1-K as shown in 1) are placed on a table with WI11 and the surface Km of the 9-contact tape (1) is observed. Then, the pellets lu were diced with a dicer etc. to show tM, JmK and Quaha 121K.
＃lI lphantom (bite)... followed by Quaha 1
t4i1nl... to mshi with the roller ◆, -
Each pellet opening 1 (11...K minutes - and then the pellet (凰) is divided - %w, Jmi indicates 1sK, monk's tape (81t - radially #l cusps 0 @ ring the edge 161 K lit along K f
11! (11) Expand the length of the il+... 0th adhesive T-ply from below the il+ and lift the push-up rod made of metal or metal to remove it. Push up the center part.At this time, the beret (1) is in point contact with the adhesive tape (11) shown in Figure 1. From the suction jig to the pellet (
1! Place it on the semiconductor substrate (
(not shown).

The supply of 11+ is easy to arrange, and it is widely used in the manufacture of various types of body accessories, and it is used in general transistors. ; + Soso does not cause any obscurity, but Wa
When using the above method, a large number of defective products were produced in the case of S-transported gravel packaging.

For example, the os@o#P conductor package w is made by forming a silicon semiconductor && (117K impurity diffusion etc.) on the cap as shown in Fig. 2, and forming the source n and drain 1 ceramic. On the silicon [1iDK#!!
1l) A gate electrode JIIs4 is formed through the gate electrode 14. When voltage is applied to the gate electrode, the channel in the semiconductor part directly under the gate changes, and this channel J
&10 By changing the depth 'S, K is used to control the magnitude of *a flowing between the source ttgl and the drain tti.

The existence of such a semiconductor device l1rFi metal N941 is the key, but this oxidation #II4 is very elegant and has the property of being easily destroyed by a high voltage.

Taking into account the above points, when we took Harauchi, which is the cause of defective products in the conventional pellet supply method, to ji1, the price of Oshiage was 18.
ノ rises and pushes up the seal tape (3) and the bellet (凰1), the push-up is 181 and the ill chi 11.11 is a related body, and it rubs against each other and reaches the huan / θ0 port. It was found that static electricity was generated and this static electricity acted on the adhesive tape (3) and the connected pellet, causing the adhesive tape (3) to become electrically connected and resulting in a defective product.

This invention was made in view of the above-mentioned drawbacks in pellet feeding in the conventional semiconductor device manufacturing system. To provide a manufacturing method that suppresses the occurrence of defective products by eliminating K so that it does not act on the pellet.

In other words, ζO@Ai prevents the generation of static electricity due to the curling of the adhesive tape to which the pellet is attached and the push-up barrel.
ii Even if static electricity is generated, it will be discharged at the periphery of the adhesive tape to prevent electricity from being transferred to the adhesive tape, and this will prevent the heat from spreading to the adhesive tape.

The monk tape 1, which can be used from ζ0 to 114, is coated with an electrostatic negative generation prevention agent on the screen of IIK shown in No. 2A, the contact 11 with the pellet contact plate 187. And hh, one example of the static electricity generation prevention agent QJI is Ta1c 1! If you spray it with Mu TXO p1 and use it as a steady stream, or use copper ■O to prevent electricity generation and use it as a -1 conductive sheet, it will be 0ON! Bolt-191111210 Company 0 '11' 111K POLY, etc. # membrane may be provided.・Above structure 11. When a semiconductor device is manufactured using an adhesive tape, it cannot be adhered to the adhesive part 9η of the adhesive tape.
(II +... K minute - shown in □II/-, by stretching the tape or enlarging K)
jaK was paid off Berev) The weight that dares to use il+, the weight is pushed up from below (the vice rises and the adhesive tape and Beren)
Adhesive tape n and push-up stretch t8+ when pushing up il+
When they rub against each other, $m% is generated, but since the IIk side of the Hoken tape is coated with an electrical threat prevention agent O#, the generated #electricity is absorbed by this static electricity i. 111 K Fi gauze electricity does not work when electricity is connected to the guard tape (Belen) which is suddenly discharged by the anti-destructive agent i and does not charge the sushi tape. Beret (1
)'s oxidation experience is not destroyed, and it is pushed up by +Ik.
It is collected from the lft tape, supplied to a factory (not shown), etc., and processed into a product by putting it in a mold.

In this aiK and wM semiconductor device, the pellet (1) extracted from the electrically conductive tape is illuminated by static electricity.
MOI 14 @ 0 cow conductor f
In 11, the rate of non-defective products is greatly improved.

Although the above manufacturing method is particularly suitable for manufacturing the 01 thin beef body bush O, there are other cases that are affected by static electricity. IU
This is applicable to semiconductor devices such as semiconductors in transistors, etc. As explained above, when the pellets are removed from the adhesive tape, the pellets are removed.

Oml reaiai with the push-up tape that pushes up the adhesive tape? Therefore, the electricity is discharged with the electrostatic GIL anti-threat agent and does not discharge electricity to the adhered tape, so it can be applied to the choreography tape and has no effect on the pellet. When applied to the mosjlJPII 1 body device, the oxidized IIK that is formed on the pellet is not multi-ringed due to static electricity, and the yield rate is improved.
II- Also improves performance.

[Brief explanation of drawings]

The 7th leap is dicing.
7> ill Tsuru J- is an @ side view showing the conventional semiconductor device O manufacturing knee, and Figure 114 is a M01 semiconductor device 05mg5. IN
The House of F is a book-Liu Fangmei is a beast-keeper who can endure the period of suffering.
Figure %IIJ is a cross-sectional view showing the versatility of manufacturing according to the present invention.

Claims (1)

[Claims] 11) Coat the back with 1iK static electricity generation prevention agent, apply multiple semiconductor pellets to the surface of the adhesive tape O, adhere the semiconductor wafer, divide the semiconductor wafer into individual conductors, and apply ζOv & adhesive tape radially. Stretch it to expand the size of each semiconductor pellet, and in this state, push up the semiconductor pellet from below the adhesive T-P O using a forceps, and then push the semiconductor pellet out with a suction jig and supply it to a semiconductor substrate, etc. Yosui beef cold body eel alIO production method is characterized by the fact that there is no YoK.