CN104425334B - The manufacturing method and semiconductor manufacturing apparatus of semiconductor device - Google Patents
The manufacturing method and semiconductor manufacturing apparatus of semiconductor device Download PDFInfo
- Publication number
- CN104425334B CN104425334B CN201310741341.XA CN201310741341A CN104425334B CN 104425334 B CN104425334 B CN 104425334B CN 201310741341 A CN201310741341 A CN 201310741341A CN 104425334 B CN104425334 B CN 104425334B
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- chip
- workbench
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Abstract
Embodiments of the present invention provide the manufacturing method that can not only inhibit to the semiconductor manufacturing apparatus and semiconductor device for damaging but also being reliably split at least one party in semiconductor wafer and adhesive linkage of semiconductor chip.The semiconductor manufacturing apparatus of embodiment has：Holding mechanism keeps the ring attached in the blank parts of the band for being pasted with semiconductor wafer being located at around the semiconductor wafer；And workbench, the band is extended by relatively rising relative to ring.Workbench has the 1st adsorption section adsorbed to the middle section in addition to outer region of semiconductor wafer.
Description
Technical field
The present invention relates to the manufacturing method of semiconductor device and semiconductor manufacturing apparatuses.
Background technology
There is the manufacturing method of such semiconductor device：Utilizing cutting blade（dicing blade）It divides the wafer into
When semiconductor chip one by one, it is split from semiconductor wafer side to semiconductor wafer, also to adhesive layer.Have and is claimed
It is cut for stealth（stealth dicing）The manufacturing method of such semiconductor device：With in semiconductor wafer inner focusing
Mode irradiates laser and after cutting line forms modified layer in semiconductor wafer, applies in the horizontal direction to semiconductor wafer
Tension is so that generate using modified layer as the crackle of the vertical direction of starting point, by semiconductor wafer as unit of semiconductor chip
It is split（Singualtion）.All it is to attach to adhesive layer and/or semiconductor wafer with extensibility in these manufacturing methods
Extension with taking and be extended with band to the extension, to divide adhesive layer and/or semiconductor wafer.
It is above-mentioned adhesive layer and/or semiconductor wafer are split like that in the case of, it is preferable that extension with band uniformly
Ground is extended adhesive layer and/or semiconductor wafer.But be pasted in the region of semiconductor chip, extension is difficult with band
With stretching, extension.It is, the outer region of semiconductor wafer is compared with the inner region of semiconductor wafer, extension is easy to stretch with band
Exhibition.
Therefore, in the outer region of semiconductor wafer, the power that extends sometimes is difficult to transmit, can not to adhesive layer and/
Or semiconductor wafer is split.It is contemplated that increasing the propagation of extension band to the outer region about semiconductor wafer
Also adhesive layer and/or semiconductor wafer are split.But if increase the propagation of extension band, in semiconductor die
The inner region of piece, semiconductor chip may fall off from extension with band, in addition fall off after semiconductor wafer may be with half
Conductor chip contacts and damages semiconductor chip.
Invention content
Embodiments of the present invention offer can not only inhibit the damage to semiconductor chip but also reliably to semiconductor wafer
And the manufacturing method and semiconductor manufacturing apparatus of semiconductor device that at least one party in adhesive linkage is split.
The semiconductor manufacturing apparatus that embodiment is related to, has：Holding mechanism keeps ring, which is attached to
It is pasted with the band of semiconductor wafer, blank parts around the semiconductor wafer；And workbench, by opposite
Relatively rise in ring and extends to the band.Workbench has the central area in addition to outer region to the semiconductor wafer
The 1st adsorption section that domain is adsorbed.
Description of the drawings
Fig. 1 is the process object i.e. figure of semiconductor wafer of semiconductor manufacturing apparatus of the first embodiment.
Fig. 2 is the structure chart of semiconductor manufacturing apparatus of the first embodiment.
Fig. 3 is the manufacturing flow chart using semiconductor manufacturing apparatus of the first embodiment manufacture semiconductor device.
Fig. 4 is the manufacturing procedure picture using semiconductor manufacturing apparatus of the first embodiment manufacture semiconductor device.
Fig. 5 is the manufacturing procedure picture using semiconductor manufacturing apparatus of the first embodiment manufacture semiconductor device.
Fig. 6 is the structure chart of semiconductor manufacturing apparatus of the second embodiment.
Fig. 7 is the manufacturing flow chart using semiconductor manufacturing apparatus of the second embodiment manufacture semiconductor device.
Fig. 8 is the manufacturing procedure picture using semiconductor manufacturing apparatus of the second embodiment manufacture semiconductor device.
Fig. 9 is the manufacturing procedure picture using semiconductor manufacturing apparatus of the second embodiment manufacture semiconductor device.
Figure 10 is the manufacturing procedure picture using semiconductor manufacturing apparatus of the second embodiment manufacture semiconductor device.
Figure 11 is the structure chart of semiconductor manufacturing apparatus of the third embodiment.
Figure 12 is the manufacturing procedure picture using semiconductor manufacturing apparatus of the third embodiment manufacture semiconductor device.
Figure 13 is the manufacturing procedure picture using semiconductor manufacturing apparatus of the third embodiment manufacture semiconductor device.
Reference sign
100 ... semiconductor wafers（Chip）；101 ... bands；
102…DAF（Small pieces attach film, die attachment film）；103 ... rings；
200~400 ... semiconductor manufacturing apparatuses；210 ... workbench；
The porous adsorption section 210a, 210b ...；210c ... detaches band；
220 ... driving mechanisms；230 ... ring holding mechanisms.
Specific implementation mode
In the following, an embodiment of the manufacturing method and semiconductor manufacturing apparatus with regard to semiconductor device referring to figs. 1 to
Figure 13 is illustrated.In addition, in various embodiments, marking identical reference numeral to substantially the same constituting parts and saving
Slightly illustrate.But attached drawing be it is schematical, the relationship of thickness and planar dimension, thickness proportion of each layer etc. with reality not
Together.The term in inferior direction in expression in explanation indicates that it is upper to form surface side with the circuit of aftermentioned semiconductor substrate sometimes
In the case of opposite direction, from the basis of acceleration of gravity direction reality direction it is different.
（1st embodiment）
Fig. 1 is the process object i.e. semiconductor wafer 100 of present embodiment（It is recorded as chip 100 below）Figure.Fig. 1
（a）It is the vertical view of chip 100, Fig. 1（b）It is Fig. 1（a）Line segment X-X at chip 100 sectional view.It is shown in FIG. 1
Chip 100 is attached to DAF（Small pieces attach film）On 102, and the DAF102 is set to band 101.It is located at chip 100 in band 101
The blank parts of surrounding are placed with the ring 103 for being supported, transporting to chip 100.
In the condition shown in figure 1, chip 100 has pressed each integrated circuit（It is recorded as chip below）Each of and monolithic
Change.But DAF102 is not yet divided into shape corresponding with each chip, is roughly the same with the shape of entire chip 100
Shape.
DAF102 can be used for example using epoxy and/or polyimides, acrylic acid as the splicing tape of principal component.101 energy of band
Enough use following stacked film：For example using vinyl chloride and/or polyolefin to be provided with stripping on the base material of the easy stretching, extension of principal component
From promotion layer（RL）, stripping promotion layer（RL）Cure using fluorine resins such as polytetrafluoroethylene (PTFE) and/or if irradiating ultraviolet light
And become easy stripping using epoxy as ultraviolet curable resin of principal component etc..
Fig. 2 is the structure chart of semiconductor manufacturing apparatus 200 of the first embodiment, Fig. 2（a）It is semiconductor manufacturing dress
Set 200 vertical view.Fig. 2（b）It is Fig. 2（a）Line segment Y-Y at semiconductor manufacturing apparatus 200 sectional view.
As shown in Fig. 2, semiconductor manufacturing apparatus 200 has workbench 210, driving mechanism 220 and ring holding mechanism 230.
Workbench 210 is the base station for loading chip 100 shown in FIG. 1.The diameter D1 and the diameter of chip 100 of workbench 210 are big
It causes identical or slightly slightly bigger, overlooks as circle identical with chip 100.
It is equipped with cavernous adsorption section 210a in the middle section of workbench 210（It is recorded as porous adsorption section below
210a）.The shape of the porous adsorption section 210a, overlook also be circle, centered on concentric circles identical with workbench 210.
Porous adsorption section 210a is the vesicular structure that there are multiple holes in inside.Porous adsorption section 210a passes through pump (not shown)
Attracted, so as to carrying out absorption fixation to the back side middle section of chip 100 across band 101 shown in FIG. 1.It is porous
Adsorption section 210a can fire such as metal powder and/or ceramic powders and be formed.
In present embodiment, in order to the back side middle section to chip 100 is adsorbed and in the central area of workbench 210
Domain has set porous adsorption section 210a.But can also be other structures about the absorption of the back side middle section to chip 100.
For example, it is also possible to 210 surface of workbench middle section concentric circles a plurality of slot is set, by carrying out suction vacuum to the slot
And the back side middle section of chip 100 is adsorbed.In addition, in order to which the back side to chip 100 is adsorbed, can also utilize
Electrostatic chuck（ESC：Electrostatic Chuck）To replace vacuum suction.Utilizing electrostatic chuck（ESC）In the case of,
The heating and cooling of workbench 210 become easy.
Driving mechanism 220 is vertically（The upper and lower directions of Fig. 2）Workbench 210 is driven.220 energy of driving mechanism
Enough divide workbench 210 to rise multistagely and decline.Driving mechanism 220 is by such as linear guides and motor or air actuator
Deng composition.
Ring holding mechanism 230 keeps ring 103 shown in FIG. 1.In the shape by 230 retaining ring 103 of ring holding mechanism
Under state, by making workbench 210 rise, so that band 101 extends（Stretching, extension）So that DAF102 is divided into and chip 100
The corresponding shape of each chip.
The position of workbench 210 can not also be changed, ring 103 is made to decline that band 101 is made to extend.As long as that is, being configured to
Workbench 210 relatively rises relative to ring 103.
Then, it is just carried out using the manufacturing method of the semiconductor device of the semiconductor manufacturing apparatus 200 illustrated with reference to Fig. 2
Explanation.Fig. 3 is the manufacturing flow chart that semiconductor device is manufactured using semiconductor manufacturing apparatus 200.Fig. 4, Fig. 5 are to utilize semiconductor
Manufacturing device 200 manufactures the manufacturing procedure picture of semiconductor device.
（Process S101）
First, using chip feed unit (not shown), DAF102 will be clipped shown in Fig. 1 and is positioned on band 101
The back side of back side, that is, band 101 of chip 100 is placed in the workbench 210 of semiconductor manufacturing apparatus 200 shown in Figure 2
On, and ring 103 is kept by ring holding mechanism 230（With reference to Fig. 4（a））.
（Process S102）
Then, carrying out driving to workbench 210 by driving mechanism 220 makes it rise to predetermined altitude, applies to band 101
Tension（With reference to Fig. 4（b））.Due to the rising, it is difficult to stretch the chip 100 for being namely easy to apply tension to band 101 in band 101
Inner region, DAF102 is divided into shape corresponding with each chip.
But compared with the inner region of chip 100 and band 101 be easy stretching, extension therefore tension be difficult to the chip applied
100 outer region retains the position that DAF102 is not divided into shape corresponding with each chip sometimes.
（Process S103）
Therefore, in this embodiment, the porous adsorption section 210a of the middle section setting in workbench 210 is inhaled
Vacuum, to which the band 101 of the inner region to chip 100 carries out absorption fixation（With reference to Fig. 5（a））.By in chip 100
The band 101 in all regions carries out absorption fixation, to become easy the outer region force to chip 100, even if in chip 100
Outer region is also easy segmentation DAF102.
（Process S104）
The band 101 of the inner region to chip 100 carry out absorption it is fixed in the state of, make workbench 210 further on
It rises（With reference to Fig. 5（b））.Due to the rising, enough tension is also applied to the outer region of chip 100, it is not yet divided
DAF102 is divided into shape corresponding with each chip.
In the above description, by by the position of ring holding mechanism 230（Highly）It is set as certain and makes on workbench 210
It rises, and tension is applied to band 101.But it is also possible to by by the position of workbench 210（Highly）It is set as certain and ring is made to keep
Mechanism 230 declines, and applies tension to band 101.
As described above, semiconductor manufacturing apparatus 200 of the first embodiment has：Ring holding mechanism 230, to patch
The ring 103 for being attached to the blank parts of band 101 being located at around chip 100 is kept；With workbench 210, across band 101 with
And DAF102（Adhesive linkage）Absorption fixation is carried out to the middle section of chip 100, by relatively rising relative to ring 103, and
Band 101 is set to extend.
Moreover, chip 100 is positioned on workbench 210, and workbench 210 is made to be located at chip relative in band 101
The ring 103 that blank parts around 100 are attached relatively rises, is extended to band 101, then makes workbench 210 to crystalline substance
The middle section of piece 100 carries out absorption fixation, keeps workbench 210 further up relative to ring 103 and further expands band 101
Exhibition.Therefore, it is possible to not only inhibit the damage to chip but also reliable Ground Split DAF102（Adhesive linkage）.
（2nd embodiment）
Fig. 6 is the structure chart of semiconductor manufacturing apparatus 300 of the second embodiment.Semiconductor manufacturing apparatus 300,
The outer region of workbench 210 is provided with cavernous adsorption section 210b（It is recorded as porous adsorption section 210b below）With will be porous
The separation band 210c that adsorption section 210a and porous adsorption section 210b is separated, this point and the semiconductor system illustrated with reference to Fig. 2
It is different to make device 200.In terms of other, because being identical structure, identical attached drawing mark is marked to identical structure
Remember and repeat description is omitted.
The shape of porous adsorption section 210b, overlook be also circle, centered on be 210 identical concentric circles of workbench.With it is more
Similarly, porous adsorption section 210b is in the internal porous structure with multiple holes to hole adsorption section 210a.Porous adsorption section
210b is attracted by using pump (not shown), so as to the back side periphery across band 101 shown in FIG. 1 to chip 100
Region carries out absorption fixation.
Porous adsorption section 210b is separated from structure with porous adsorption section 210a by detaching band 210c, can be independent
Ground carries out absorption fixation to the back side outer region of chip 100.Porous adsorption section 210b can fire such as metal powder and/or
Ceramic powders and formed.The practice that porous adsorption section 210b is set, such as the perimeter region on 210 surface of workbench can also be replaced
Domain is arranged a plurality of slot with concentric circles and inhale vacuum to the slot to be adsorbed to the back side outer region of chip 100.
Then, it is just carried out using the manufacturing method of the semiconductor device of the semiconductor manufacturing apparatus 300 illustrated with reference to Fig. 6
Explanation.Fig. 7 is the manufacturing flow chart that semiconductor device is manufactured using semiconductor manufacturing apparatus 300.Fig. 8~Figure 10 is to utilize partly to lead
Body manufacturing device 300 manufactures the manufacturing procedure picture of semiconductor device.
（Process S201）
First, by the back side i.e. back of the body of band 101 for the chip 100 being positioned in across DAF102 shown in Fig. 1 on band 101
Surface side is placed on the workbench 210 of semiconductor manufacturing apparatus 300 shown in Fig. 6, and by ring holding mechanism 230 to ring
103 are kept（With reference to Fig. 8（a））.
（Process S202）
Then, carrying out driving to workbench 210 by driving mechanism 220 makes it rise until predetermined altitude, applies band 101
Add tension（With reference to Fig. 8（b））.Due to the rising, it is difficult to stretch the chip for being namely easy to apply tension to band 101 in band 101
100 inner region, DAF102 are divided into shape corresponding with each chip.
（Process S203）
Then, suction vacuum is carried out to the porous adsorption section 210a of the middle section setting in workbench 210, to chip
The band 101 of 100 inner region carries out absorption fixation（With reference to Fig. 9（a））.By the band 101 of the inner region to chip 100 into
Row absorption is fixed, and to become easy the outer region force to chip 100, segmentation is also easy in the outer region of chip 100
DAF102。
（Process S204）
The band 101 of the inner region to chip 100 carry out absorption it is fixed in the state of, make workbench 210 further on
It rises（With reference to Fig. 9（b））.
（Process S205）
Then, suction vacuum is carried out to the porous adsorption section 210b of the outer region setting in workbench 210, to chip
The band 101 of 100 outer region carries out absorption fixation（Referring to Fig.1 0（a））.
（Process S206）
In the state of carrying out adsorbing fixed to the inner region of chip 100 and the band 101 of outer region, make workbench
210 is further up（Referring to Fig.1 0（b））.
In the above description, by by the position of ring holding mechanism 230（Highly）It is set as certain and makes on workbench 210
It rises, to apply tension to band 101.But it is also possible to by by the position of workbench 210（Highly）It is set as certain and makes environmental protection
The decline of mechanism 230 is held, to apply tension to band 101.
As described above, semiconductor manufacturing apparatus 300 of the second embodiment also has in the outer region of workbench 210
Standby cavernous adsorption section 210b（It is recorded as porous adsorption section 210b below）With by porous adsorption section 210a and porous adsorption section
The separation band 210c that 210b is separated.
Moreover, make workbench 210 to the middle section of chip 100 carry out absorption it is fixed and make workbench 210 relative to
Ring 103 rises after extend to band 101, makes middle section and outer region progress of the workbench 210 to chip 100
Absorption is fixed, and is kept workbench 210 further up relative to ring 103 and be extended to band 101.Therefore, it is possible to more effective
Ground had not only inhibited the damage to chip but also reliable Ground Split DAF102（Adhesive linkage）.
In addition, in this embodiment, being configured to workbench 210 being divided into 2 regions（Middle section and perimeter region
Domain）And absorption fixation is carried out to the back side of chip 100, but can also be configured to workbench 210 being divided into 3 or more regions
And absorption fixation is carried out to the back side of chip 100.
（3rd embodiment）
Figure 11 is the structure chart of semiconductor manufacturing apparatus 400 of the third embodiment.In semiconductor manufacturing apparatus 400,
Porous adsorption section 210a is different from the porous adsorption capacity of adsorption section 210b, this point and the semiconductor manufacturing illustrated with reference to Fig. 6
Device 300 is different.Specifically, the adsorption capacity of porous adsorption section 210b is weaker than the adsorption capacity of porous adsorption section 210a.About it
It is identical structure with the semiconductor manufacturing apparatus 300 illustrated with reference to Fig. 6 in terms of him, so being marked to identical structure identical
Reference numeral and the repetitive description thereof will be omitted.
Then, just using the manufacturing method of the semiconductor device of 1 semiconductor manufacturing apparatus 400 illustrated referring to Fig.1 into
Row explanation.Figure 12, Figure 13 are the manufacturing procedure pictures that semiconductor device is manufactured using semiconductor manufacturing apparatus 400.In addition, about profit
The manufacturing process that semiconductor device is manufactured with semiconductor manufacturing apparatus 400, illustrates with reference to Fig. 3.
（Process S301）
First, the i.e. band 101 of back side of the chip 100 on band 101 is placed in across DAF102 by shown in FIG. 1
Back side is placed on the workbench 210 for the semiconductor manufacturing apparatus 400 being shown in FIG. 11, right by ring holding mechanism 230
Ring 103 is kept（Referring to Fig.1 2（a））.
（Process S302）
Then, carrying out driving to workbench 210 by driving mechanism 220 makes it increase until predetermined altitude, applies band 101
Add tension（Referring to Fig.1 2（b））.By the rising, it is difficult to stretch the chip for being namely easy to apply tension to band 101 in band 101
100 inner region, DAF102 are divided into shape corresponding with each chip.
（Process S303）
Then, suction vacuum is carried out to the porous adsorption section 210a of workbench 210 and porous adsorption section 210b, thus across
Inner region and outer region with 101 pairs of chips 100 carry out absorption fixation.At this point, so that porous adsorption section 210b
The adsorption capacity mode weaker than the adsorption capacity of porous adsorption section 210a carries out porous adsorption section 210a and porous adsorption section 210b
Inhale vacuum（Referring to Fig.1 3（a））.
（Process S304）
The band 101 of the inner region to chip 100 carry out absorption it is fixed in the state of, make workbench 210 further on
It rises（Referring to Fig.1 3（b））.Due to the rising, enough tension is also applied to the outer region of chip 100, it is not yet divided
DAF102 is divided into shape corresponding with each chip.
In the above description, by by the position of ring holding mechanism 230（Highly）It is set as certain and makes on workbench 210
It rises, to apply tension to band 101.But it is also possible to by by the position of workbench 210（Highly）It is set as certain and makes environmental protection
The decline of mechanism 230 is held, to apply tension to band 101.
As described above, in semiconductor manufacturing apparatus 400 of the third embodiment, so that porous adsorption section 210b
The adsorption capacity mode weaker than the adsorption capacity of porous adsorption section 210a carries out porous adsorption section 210a and porous adsorption section 210b
Inhale vacuum.Therefore, it is possible to make power caused by band extension（Tension）Smooth variation can more effectively inhibit the damage to chip
Wound.Other effects are identical as the 1st, semiconductor manufacturing apparatus of the second embodiment 200,300.
（The variation of 1st~the 3rd embodiment）
The above-mentioned the 1st~semiconductor manufacturing apparatus 200~400 of the third embodiment in, DAF102 is carried out
Segmentation, but 200~400 pairs of progress of chips 100 of the 1st~semiconductor manufacturing apparatus of the third embodiment can also be utilized
Segmentation.For example, it is also possible to：Laser is irradiated in a manner of in 100 inner focusing of chip and is formd in chip 100 along cutting line changes
After property layer, using the 1st~200~400 pairs of chips 100 of semiconductor manufacturing apparatus of the third embodiment apply in the horizontal direction
Add tension to generate using modified layer as the crackle of the vertical direction of starting point, chip 100 is split as unit of chip（It is single
Piece）.In addition it is also possible to be split simultaneously to chip 100 and DAF102.
It illustrates several embodiments of the invention, but is not limited to structure, various conditions shown in each embodiment,
These embodiments are to propose as an example, are not used in and are defined to the range of invention.These new embodiments can
Implement in such a way that others are various, various omissions, displacement, change can be carried out without departing from the spirit of the invention.
These embodiments and/or its deformation are also contained in the range and/or purport of invention, and are included in recorded in technical solution
Invention and its equivalent range in.
Claims (3)
1. a kind of manufacturing method of semiconductor device comprising：
By it is with undivided adhesive layer, by each of each chip and the semiconductor wafer of singualtion is so that the bonding
The process that oxidant layer attaches to the band with the mode with contact；
The process that ring is attached into the part around the semiconductor wafer for having attached to the band；
It will be pasted with the band of the semiconductor wafer and the ring, so that being pasted with the opposite side in the face of the semiconductor wafer
The mode that is contacted of the face process that is placed into workbench；
The workbench for being placed with the band is set relatively to increase relative to the ring, so that in the semiconductor wafer
The process that the adhesive layer in centre region is divided into shape corresponding with each chip；
Only the middle section absorption in addition to outer region of the semiconductor wafer is fixed on after relatively rising
The process of the workbench；With
Keep the workbench relatively further up relative to the ring after absorption secures the middle section, so that
The process that the adhesive layer of the outer region of the semiconductor wafer is divided into shape corresponding with each chip.
2. the manufacturing method of semiconductor device according to claim 1, wherein
Further include：Outer region absorption is fixed on and secures the institute further risen after the middle section in absorption
The process for stating workbench.
3. the manufacturing method of semiconductor device according to claim 2, wherein
Further include：Keep the workbench relatively further up relative to the ring after absorption secures the outer region
Process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013186101A JP6017388B2 (en) | 2013-09-09 | 2013-09-09 | Manufacturing method of semiconductor device |
| JP2013-186101 | 2013-09-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104425334A CN104425334A (en) | 2015-03-18 |
| CN104425334B true CN104425334B (en) | 2018-11-13 |
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| CN201310741341.XA Expired - Fee Related CN104425334B (en) | 2013-09-09 | 2013-12-27 | The manufacturing method and semiconductor manufacturing apparatus of semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP6017388B2 (en) |
| CN (1) | CN104425334B (en) |
| TW (1) | TWI529793B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6934327B2 (en) * | 2017-06-07 | 2021-09-15 | 株式会社ディスコ | Wafer division method and division device |
| JP7115862B2 (en) * | 2018-02-13 | 2022-08-09 | 株式会社ディスコ | Splitting device and splitting method |
| TWI754344B (en) * | 2020-08-07 | 2022-02-01 | 志聖工業股份有限公司 | Film laminator and film lamination method |
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| CN1655327A (en) * | 2004-02-09 | 2005-08-17 | 株式会社迪斯科 | Method for cutting wafer |
| CN1731560A (en) * | 2004-08-05 | 2006-02-08 | 株式会社迪斯科 | Method and apparatus for dividing an adhesive film mounted on a wafer |
| CN101297394A (en) * | 2005-11-10 | 2008-10-29 | 株式会社瑞萨科技 | Semiconductor device manufacturing method and semiconductor device |
| CN101026126A (en) * | 2006-02-14 | 2007-08-29 | 株式会社迪斯科 | Method for producing semiconductor chip |
| CN101079374A (en) * | 2006-05-23 | 2007-11-28 | 株式会社瑞萨科技 | Fabrication method of semiconductor device |
| CN101447411A (en) * | 2007-11-27 | 2009-06-03 | 株式会社迪思科 | Method for disconnecting adhesive bonding film with backmounted wafer and adhesive bonding film |
| CN101515565A (en) * | 2008-02-20 | 2009-08-26 | 株式会社迪思科 | Secmiconductor chip fabrication method |
| CN101577217A (en) * | 2008-05-09 | 2009-11-11 | 株式会社迪思科 | Breaking apparatus for membraniform adhesive and breaking method thereof |
| CN101620984A (en) * | 2008-07-04 | 2010-01-06 | 株式会社迪思科 | Pick up method of device mounted with adhesive membrane |
| CN102405509A (en) * | 2009-03-31 | 2012-04-04 | 安森美半导体贸易公司 | Semiconductor device and method for manufacturing same |
| CN101887841A (en) * | 2009-05-11 | 2010-11-17 | 株式会社迪思科 | Adhesive tape expansion method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015053419A (en) | 2015-03-19 |
| TW201511107A (en) | 2015-03-16 |
| CN104425334A (en) | 2015-03-18 |
| TWI529793B (en) | 2016-04-11 |
| JP6017388B2 (en) | 2016-11-02 |
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