TW201511107A - Method of manufacturing semiconductor device, and semiconductor manufacturing apparatus - Google Patents

Abstract

One embodiment of the present invention provides a semiconductor manufacturing apparatus capable of suppressing damage to semiconductor chips, while reliably cutting at least one side of a semiconductor wafer or an adhesive layer. The semiconductor manufacturing apparatus of this embodiment comprises: a holding mechanism, which holds a ring stuck of a margin portion of the adhesive tape adhered to the semiconductor wafer, wherein the margin portion is placed at the circumference of the aforementioned semiconductor wafer; a carrier which rises in relation to the ring and thereby expands the adhesive tape. The carrier has a first adsorption unit which adsorbs the central area, except the outer peripheral area, of the aforementioned semiconductor wafer.

Description

Semiconductor device manufacturing method and semiconductor manufacturing device [Related application]

The present application has priority in the application based on Japanese Patent Application No. 2013-186101 (filing date: September 9, 2013). This application contains the entire contents of the basic application by reference to the basic application.

The present invention relates to a method of fabricating a semiconductor device and a semiconductor manufacturing apparatus.

When a wafer is divided into individual semiconductor wafers by using a dicing blade, a method of manufacturing a semiconductor device in which an adhesive layer is also separated from a semiconductor wafer from a semiconductor wafer side is used. After irradiating the laser light in a semiconductor wafer by connecting the focus and forming a modified layer in the semiconductor wafer along the dicing line, a tension is applied to the semiconductor wafer in a horizontal direction to generate a vertical layer starting from the modified layer. A method of manufacturing a semiconductor device called a non-contact dicing in which a semiconductor wafer is divided into semiconductor wafer units (single-chip) by cracking in the direction. In any of these manufacturing methods, the adhesive layer or the semiconductor wafer is attached to the stretchable expansion tape, and the adhesive layer or the semiconductor wafer is divided by expanding the expansion tape.

When the adhesive layer or the semiconductor wafer is divided as described above, it is preferred that the expansion tape is uniformly expanded with respect to the adhesive layer or the semiconductor wafer. However, the expansion tape in the region to which the semiconductor wafer is attached is difficult to stretch. That is, the outer peripheral region of the semiconductor wafer is more easily stretched with the tape than the inner peripheral region of the semiconductor wafer.

Therefore, in the peripheral region of the semiconductor wafer, the force of expansion is difficult to transfer, and The case where the adhesive layer or the semiconductor wafer cannot be divided. It is considered to increase the amount of expansion of the expansion tape, and the adhesive layer or the semiconductor wafer is also divided for the outer peripheral region of the semiconductor wafer. However, when the amount of expansion of the expansion tape is increased, the semiconductor wafer is detached from the self-expanding tape in the inner peripheral region of the semiconductor wafer, and is in contact with the detached semiconductor wafer to cause damage to the semiconductor wafer.

According to an embodiment of the present invention, a semiconductor device manufacturing method and a semiconductor manufacturing apparatus capable of reliably dividing at least one of a semiconductor wafer and an adhesive layer while suppressing damage to a semiconductor wafer are provided.

The semiconductor manufacturing apparatus of the present embodiment includes: a holding mechanism that holds a ring attached to a blank portion of the tape to which the semiconductor wafer is attached, which is located around the semiconductor wafer; and a stage that is relatively raised by the ring And expand the above tape. The stage has a first adsorption portion that adsorbs a central region other than the peripheral region of the semiconductor wafer.

100‧‧‧Semiconductor wafer (wafer)

101‧‧‧ Tape

102‧‧‧DAF (dield film)

103‧‧‧ Ring

200~400‧‧‧Semiconductor manufacturing equipment

210‧‧‧Package

210a‧‧‧Porous adsorption section

210b‧‧‧Porous adsorption section

210c‧‧‧Separation zone

220‧‧‧ drive mechanism

230‧‧‧ Ring Maintenance Agency

X‧‧‧ direction

Y‧‧‧ direction

1(a) and 1(b) are views showing a semiconductor wafer which is a processing target of the semiconductor manufacturing apparatus of the first embodiment.

2(a) and 2(b) are views showing the configuration of a semiconductor manufacturing apparatus according to the first embodiment.

Fig. 3 is a manufacturing flow of a semiconductor device using the semiconductor manufacturing apparatus of the first embodiment.

4(a) and 4(b) are diagrams showing the steps of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the first embodiment.

5(a) and 5(b) are diagrams showing the steps of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the first embodiment.

Fig. 6 is a configuration diagram of a semiconductor manufacturing apparatus of a second embodiment.

Fig. 7 is a manufacturing flow of a semiconductor device using the semiconductor manufacturing apparatus of the second embodiment.

8(a) and 8(b) are diagrams showing the steps of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the second embodiment.

9(a) and 9(b) are diagrams showing the steps of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the second embodiment.

10(a) and 10(b) are diagrams showing the manufacturing steps of a semiconductor device using the semiconductor manufacturing apparatus of the second embodiment.

11(a) and 11(b) are configuration diagrams of a semiconductor manufacturing apparatus according to a third embodiment.

12(a) and 12(b) are diagrams showing the steps of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the third embodiment.

Figs. 13(a) and 13(b) are diagrams showing the steps of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the third embodiment.

Hereinafter, an embodiment of a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus will be described with reference to FIGS. 1 to 13 . In the respective embodiments, the same components are denoted by the same reference numerals, and their description is omitted. However, the pattern is model, and the relationship between the thickness and the plane size, the ratio of the thickness of each layer, and the like are different from the actual ones. In the description, the term indicating the direction of the upper and lower sides indicates a direction in which the circuit forming surface side of the semiconductor substrate described later is in the opposite direction, and is different from the actual direction based on the gravitational acceleration direction.

(First embodiment)

Fig. 1 is a view showing a semiconductor wafer 100 (hereinafter referred to as a wafer 100) which is a process target of the present embodiment. 1(a) is a plan view of the wafer 100, and FIG. 1(b) is a cross-sectional view of the wafer 100 of the line segment X-X of FIG. 1(a). The wafer 100 shown in FIG. 1 is attached to a DAF (die attach film) 102 provided on the tape 101. A ring 103 for supporting and transporting the wafer 100 is placed in a blank portion of the tape 101 around the wafer 100.

In the state shown in FIG. 1, the wafer 100 has been described for each integrated circuit (hereinafter, described) Uniform for the wafer). However, the DAF 102 is not divided into shapes corresponding to the respective wafers, and has a shape substantially the same as that of the wafer 100 as a whole.

In the DAF 102, an adhesive tape containing, for example, epoxy or polyimine and propylene as a main component can be used. In the tape 101, a fluororesin such as polytetrafluoroethylene or a epoxide which is hardened by irradiation with ultraviolet rays and which is easily peeled off by irradiation with ultraviolet rays can be provided as a main component of an extensible substrate containing, for example, vinyl chloride or polyolefin as a main component. A laminated film of a release promoting layer (RL) such as an ultraviolet curable resin.

2 is a configuration diagram of a semiconductor manufacturing apparatus 200 according to the first embodiment, and FIG. 2(a) is a plan view of the semiconductor manufacturing apparatus 200. 2(b) is a cross-sectional view of the semiconductor manufacturing apparatus 200 of the line segment Y-Y of FIG. 2(a).

As shown in FIG. 2, the semiconductor manufacturing apparatus 200 includes a stage 210, a drive mechanism 220, and a ring holding mechanism 230. The stage 210 is used to mount the wafer 100 shown in FIG. The diameter D1 of the stage 210 is substantially the same as the diameter of the wafer 100, but is slightly larger and has the same circular shape as the wafer 100 in plan view.

In the central region of the stage 210, a porous adsorption portion 210a (hereinafter referred to as a porous adsorption portion 210a) is provided. The shape of the porous adsorption portion 210a is also rounded in plan view, and the center is formed into the same concentric circle as the stage 210.

The porous adsorption portion 210a has a porous structure having a plurality of voids therein. The porous adsorption unit 210a is sucked by a pump (not shown), and the central portion of the back surface of the wafer 100 can be adsorbed and fixed via the tape 101 shown in FIG. The porous adsorption portion 210a can be formed by sintering, for example, a metal powder or a ceramic powder.

In the present embodiment, the porous adsorption portion 210a is provided in the central portion of the stage 210 in order to adsorb the central portion of the back surface of the wafer 100. However, in order to achieve adsorption of the central region of the back surface of the wafer 100, other configurations may be employed. For example, a plurality of grooves may be provided concentrically in the central region of the front surface of the stage 210, and the central portion of the back surface of the wafer 100 may be adsorbed by vacuuming the grooves. Moreover, in order to adsorb the back surface of the wafer 100, an electrostatic chuck can also be used. (ESC: Electrostatic Chuck) instead of vacuum adsorption. When using an electrostatic chuck (ESC), the stage 210 is heated. Cooling becomes easy.

The drive mechanism 220 drives the stage 210 in the vertical direction (the upper and lower directions in FIG. 2). The drive mechanism 220 can be divided into a plurality of stages to raise and lower the stage 210. The drive mechanism 220 includes, for example, a linear guide and a motor or an air actuator or the like.

The ring holding mechanism 230 holds the ring 103 shown in FIG. In a state where the ring 103 is held by the ring holding mechanism 230, the stage 210 is raised, whereby the tape 101 is expanded (elongated), and the DAF 102 is divided into the shapes of the respective wafers corresponding to the wafer 100.

Alternatively, the position of the stage 210 may be changed, and the ring 103 may be lowered to expand the tape 101. That is, it is sufficient that the stage 210 is relatively raised with respect to the ring 103.

Next, a method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus 200 described with reference to FIG. 2 will be described. FIG. 3 is a manufacturing flow of a semiconductor device using the semiconductor manufacturing apparatus 200. 4 and 5 are manufacturing step diagrams of a semiconductor device using the semiconductor manufacturing apparatus 200.

(Step S101)

First, a wafer supply unit (not shown) is used to mount the DAF 102 on the back side of the wafer 100 on the tape 101 shown in FIG. 1, that is, the back side of the tape 101 is placed on the semiconductor shown in FIG. The ring 210 of the manufacturing apparatus 200 is held by the ring holding mechanism 230 (see FIG. 4(a)).

(Step S102)

Next, the stage 210 is driven by the drive mechanism 220 to raise it to a specific height, and tension is applied to the tape 101 (see FIG. 4(b)). In the inner peripheral region of the wafer 100 which is difficult to stretch the tape 101 due to the rise, that is, the tape 101 is easily applied, the DAF 102 is divided into shapes corresponding to the respective wafers.

However, the tape 101 is easily stretched compared to the inner peripheral region of the wafer 100, so that in the peripheral region of the wafer 100 where it is difficult to apply tension, the DAF 102 is left undivided into pairs. The case of the shape of each wafer.

(Step S103)

Therefore, in this embodiment, the porous adsorption unit 210a provided in the central region of the stage 210 is evacuated, and the tape 101 in the inner peripheral region of the wafer 100 is adsorbed and fixed (see FIG. 5(a)). By adsorbing the tape 101 that fixes the inner peripheral region of the wafer 100, it is easy to apply a force to the outer peripheral region of the wafer 100, and the DAF 102 is also easily divided in the outer peripheral region of the wafer 100.

(Step S104)

In a state in which the tape 101 in the inner peripheral region of the wafer 100 is adsorbed and fixed, the stage 210 is further raised (see FIG. 5(b)). By this rise, sufficient tension is applied to the outer peripheral region of the wafer 100, and the undivided DAF 102 is divided into shapes corresponding to the respective wafers.

In the above description, the stage 210 is raised by the position (height) of the fixing ring holding mechanism 230, and tension is applied to the tape 101. However, the ring holding mechanism 230 can also be lowered by fixing the position (height) of the stage 210 to apply tension to the tape 101.

As described above, the semiconductor manufacturing apparatus 200 of the first embodiment includes a ring holding mechanism 230 that holds the ring 103 attached to the blank portion of the tape 101 around the wafer 100, and a stage 210 that intervenes the tape The 101 and DAF 102 (adhesive layer) adsorb the central region of the fixed wafer 100 and relatively rise with respect to the ring 103, thereby expanding the tape 101.

Moreover, the wafer 100 is placed on the stage 210, and the stage 210 is relatively raised with respect to the ring 103 attached to the blank portion of the tape 101 around the wafer 100. After the tape 101 is expanded, the wafer 100 is made. The central region is adsorbed and fixed to the stage 210, and the stage 210 is further raised relative to the ring 103 to further expand the tape 101. Therefore, the DAF 102 (adhesive layer) can be surely divided while suppressing damage to the wafer.

(Second embodiment)

Fig. 6 is a configuration diagram of a semiconductor manufacturing apparatus 300 according to a second embodiment. The semiconductor manufacturing apparatus 300 is different from the semiconductor manufacturing apparatus 200 described with reference to FIG. 2 in that a porous adsorption portion 210b is provided in the outer peripheral region of the stage 210 (hereinafter, it is described as porous adsorption). The portion 210b) and the separation band 210c separating the porous adsorption portion 210a and the porous adsorption portion 210b. The same components are denoted by the same reference numerals, and the description thereof will not be repeated.

The shape of the porous adsorption portion 210b is also rounded in plan view, and the center is formed into the same concentric circle as the stage 210. Similarly to the porous adsorption unit 210a, the porous adsorption unit 210b has a porous structure having a plurality of voids therein. The porous adsorption unit 210b is suctioned by a pump (not shown), and the outer peripheral region of the back surface of the wafer 100 can be adsorbed and fixed via the tape 101 shown in FIG.

The porous adsorption unit 210b is structurally separated from the porous adsorption unit 210a by the separation belt 210c, and can independently adsorb and fix the outer peripheral region of the back surface of the wafer 100. The porous adsorption portion 210b can be formed by sintering, for example, a metal powder or a ceramic powder. Instead of providing the porous adsorption portion 210b, for example, a plurality of grooves may be provided concentrically in the outer peripheral region of the front surface of the stage 210, and the outer peripheral region of the back surface of the wafer 100 may be adsorbed by evacuating the groove.

Next, a method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus 300 described with reference to FIG. 6 will be described. FIG. 7 is a manufacturing flow of a semiconductor device using the semiconductor manufacturing apparatus 300. 8 to 10 are manufacturing steps of a semiconductor device using the semiconductor manufacturing apparatus 300.

(Step S201)

First, the back side of the wafer 100 on which the DAF 102 is placed on the tape 101 shown in FIG. 1 , that is, the back side of the tape 101 is placed on the stage 210 of the semiconductor manufacturing apparatus 300 shown in FIG. The ring 103 is held by the ring holding mechanism 230 (refer to Fig. 8(a)).

(Step S202)

Next, the stage 210 is driven by the drive mechanism 220 to raise it to a specific height, and tension is applied to the tape 101 (see FIG. 8(b)). In the inner peripheral region of the wafer 100 which is difficult to stretch the tape 101 due to the rise, that is, the tape 101 is easily applied, the DAF 102 is divided into shapes corresponding to the respective wafers.

(Step S203)

Next, the porous adsorption portion 210a provided in the central region of the stage 210 is evacuated, and the tape 101 in the inner peripheral region of the wafer 100 is adsorbed and fixed (see FIG. 9(a)). By adsorbing the tape 101 that fixes the inner peripheral region of the wafer 100, it is easy to apply a force to the peripheral region of the wafer 100, and the DAF 102 is also easily divided in the outer peripheral region of the wafer 100.

(Step S204)

In a state in which the tape 101 in the inner peripheral region of the wafer 100 is adsorbed, the stage 210 is further raised (see FIG. 9(b)).

(Step S205)

Next, the porous adsorption portion 210b provided in the outer peripheral region of the stage 210 is evacuated, and the tape 101 in the outer peripheral region of the wafer 100 is adsorbed and fixed (see FIG. 10(a)).

(Step S206)

In a state in which the tape 101 in the inner peripheral region and the outer peripheral region of the fixed wafer 100 is adsorbed, the stage 210 is further raised (see FIG. 10(b)).

In the above description, the stage 210 is raised by the position (height) of the fixing ring holding mechanism 230, and tension is applied to the tape 101. However, the ring holding mechanism 230 can also be lowered by fixing the position (height) of the stage 210 to apply tension to the tape 101.

As described above, the semiconductor manufacturing apparatus 300 of the second embodiment further includes a porous adsorption portion 210b (hereinafter referred to as a porous adsorption portion 210b) and a separation porous adsorption portion 210a and a porous adsorption portion in the outer peripheral region of the stage 210. Separation belt 210c of 210b.

Then, the central region of the wafer 100 is adsorbed and fixed to the stage 210, and the stage 210 is raised relative to the ring 103 to expand the tape 101, and then the central region and the outer peripheral region of the wafer 100 are adsorbed and fixed to the stage 210, and The stage 210 is further raised relative to the ring 103 to expand the tape 101. Therefore, the DAF 102 (adhesive layer) can be surely divided while suppressing damage to the wafer more effectively.

Further, in this embodiment, the stage 210 is divided into two regions (the central region and the outer peripheral region), and the back surface of the wafer 100 is adsorbed and fixed. However, the stage may be configured. The 210 is divided into three or more regions to adsorb the back surface of the fixed wafer 100.

(Third embodiment)

Fig. 11 is a configuration diagram of a semiconductor manufacturing apparatus 400 according to a third embodiment. The semiconductor manufacturing apparatus 400 is different from the semiconductor manufacturing apparatus 300 described with reference to FIG. 6 in that the adsorption force of the porous adsorption unit 210a and the porous adsorption unit 210b is different. Specifically, the adsorption force of the porous adsorption portion 210b is weaker than the adsorption force of the porous adsorption portion 210a. The other points are the same as those of the semiconductor manufacturing apparatus 300 described with reference to FIG. 6, and the same components are denoted by the same reference numerals, and the description thereof will not be repeated.

Next, a method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus 400 described with reference to FIG. 11 will be described. 12 and 13 are manufacturing process diagrams of a semiconductor device using the semiconductor manufacturing apparatus 400. The manufacturing flow of the semiconductor device using the semiconductor manufacturing apparatus 400 will be described with reference to FIG. 3.

(Step S301)

First, the back side of the wafer 100 on which the DAF 102 is placed on the tape 101 shown in FIG. 1, that is, the back side of the tape 101 is placed on the stage 210 of the semiconductor manufacturing apparatus 400 shown in FIG. The ring 103 is held by the ring holding mechanism 230 (refer to Fig. 12 (a)).

(Step S302)

Next, the stage 210 is driven by the drive mechanism 220 to raise it to a specific height, and tension is applied to the tape 101 (see FIG. 12(b)). In the inner peripheral region of the wafer 100 which is difficult to stretch the tape 101 due to the rise, that is, the tape 101 is easily applied, the DAF 102 is divided into shapes corresponding to the respective wafers.

(Step S303)

Next, the porous adsorption portion 210a and the porous adsorption portion 210b of the stage 210 are evacuated, and the inner peripheral region and the outer peripheral region of the wafer 100 are adsorbed and fixed by the intervening tape 101. At this time, the porous adsorption unit 210a and the porous adsorption unit 210b are evacuated so that the adsorption force of the porous adsorption unit 210b is weaker than the adsorption force of the porous adsorption unit 210a (see FIG. 13(a)).

(Step S304)

The stage 210 is further raised in a state where the tape 101 in the inner peripheral region of the fixed wafer 100 is adsorbed (see FIG. 13(b)). By this rise, sufficient tension is applied to the outer peripheral region of the wafer 100, and the undivided DAF 102 is divided into shapes corresponding to the respective wafers.

In the above description, the stage 210 is raised by the position (height) of the fixing ring holding mechanism 230, and tension is applied to the tape 101. However, the ring holding mechanism 230 can also be lowered by fixing the position (height) of the stage 210 to apply tension to the tape 101.

As described above, in the semiconductor manufacturing apparatus 400 of the third embodiment, the porous adsorption portion 210a and the porous adsorption portion 210b are evacuated so that the adsorption force of the porous adsorption portion 210b is weaker than the adsorption force of the porous adsorption portion 210a. Therefore, the force (pull force) generated by the expansion of the tape can be slowly changed, and the damage to the wafer can be more effectively suppressed. Other effects are the same as those of the semiconductor manufacturing apparatuses 200 and 300 of the first and second embodiments.

(Variation of the first to third embodiments)

In the semiconductor manufacturing apparatuses 200 to 400 of the above-described first to third embodiments, the DAF 102 is divided, but the wafer 100 may be divided by the semiconductor manufacturing apparatuses 200 to 400 of the first to third embodiments. For example, the laser light may be irradiated to the wafer 100 so as to connect the focus, and the modified layer may be formed in the wafer 100 along the dicing line, and then the semiconductor manufacturing apparatuses 200 to 400 of the first to third embodiments may be used. The wafer 100 is divided into wafer units (single-chip) by applying tension to the wafer 100 in the horizontal direction to generate a crack in the vertical direction starting from the modified layer. Further, the wafer 100 and the DAF 102 can be simultaneously divided.

Although the embodiments of the present invention have been described, the present invention is not limited to the embodiments and the various conditions described in the embodiments, and the embodiments are not intended to limit the scope of the invention. The various embodiments of the invention may be embodied in various other forms, and various omissions, substitutions and changes may be made without departing from the scope of the invention. These embodiments and variations thereof are included in the scope and spirit of the invention, and are included in the scope of the invention described in the claims.

100‧‧‧Semiconductor wafer (wafer)

101‧‧‧ Tape

102‧‧‧DAF (dield film)

103‧‧‧ Ring

X‧‧‧ direction

Claims (5)

A semiconductor manufacturing apparatus comprising: a holding mechanism that holds a ring attached to a blank portion of the tape to which the semiconductor wafer is attached, which is located around the semiconductor wafer; and a stage that is relatively raised by the ring The tape is expanded; and the stage has a first adsorption portion that adsorbs a central region other than the peripheral region of the semiconductor wafer. The semiconductor manufacturing apparatus according to claim 1, wherein the stage further includes a second adsorption unit that is disposed on the outer periphery of the first adsorption unit and that absorbs an outer circumference of the central portion. The semiconductor device according to claim 1 or 2, further comprising a wafer supply portion for placing the tape on which the semiconductor wafer and the ring are attached on the stage. A method of manufacturing a semiconductor device, comprising: a step of attaching a semiconductor wafer to a tape; a step of attaching a ring to a portion located around the semiconductor wafer; and attaching the semiconductor wafer to the ring a step of placing the tape on the stage in contact with the surface side to which the semiconductor wafer is attached; a step of relatively raising the stage to the ring; and fixing and fixing a central area other than the outer peripheral area of the semiconductor wafer a step of the above-mentioned stage; and a step of relatively raising the above-mentioned stage to the above-mentioned ring. The method of manufacturing a semiconductor device according to claim 4, wherein the step of attaching the semiconductor wafer to the tape is performed by attaching the semiconductor wafer having an adhesive layer to the adhesive tape with the adhesive layer.