CN101878452B - 剥离液组合物、使用了该剥离液组合物的树脂层的剥离方法 - Google Patents

剥离液组合物、使用了该剥离液组合物的树脂层的剥离方法 Download PDF

Info

Publication number
CN101878452B
CN101878452B CN200880118038.1A CN200880118038A CN101878452B CN 101878452 B CN101878452 B CN 101878452B CN 200880118038 A CN200880118038 A CN 200880118038A CN 101878452 B CN101878452 B CN 101878452B
Authority
CN
China
Prior art keywords
remover composition
remover
quality
composition according
resin bed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200880118038.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN101878452A (zh
Inventor
金成正夫
佐口琢哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Henkel AG and Co KGaA
Original Assignee
Henkel Loctite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Henkel Loctite Corp filed Critical Henkel Loctite Corp
Publication of CN101878452A publication Critical patent/CN101878452A/zh
Application granted granted Critical
Publication of CN101878452B publication Critical patent/CN101878452B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Paints Or Removers (AREA)
CN200880118038.1A 2007-10-17 2008-10-17 剥离液组合物、使用了该剥离液组合物的树脂层的剥离方法 Active CN101878452B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-270273 2007-10-17
JP2007270273 2007-10-17
PCT/JP2008/068885 WO2009051237A1 (ja) 2007-10-17 2008-10-17 剥離液組成物、それを用いた樹脂層の剥離方法

Publications (2)

Publication Number Publication Date
CN101878452A CN101878452A (zh) 2010-11-03
CN101878452B true CN101878452B (zh) 2015-01-07

Family

ID=40567498

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880118038.1A Active CN101878452B (zh) 2007-10-17 2008-10-17 剥离液组合物、使用了该剥离液组合物的树脂层的剥离方法

Country Status (4)

Country Link
JP (1) JP5318773B2 (ko)
KR (1) KR101286777B1 (ko)
CN (1) CN101878452B (ko)
WO (1) WO2009051237A1 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
JP2012018982A (ja) * 2010-07-06 2012-01-26 Tosoh Corp レジスト剥離剤及びそれを用いた剥離法
KR101089211B1 (ko) * 2010-12-02 2011-12-02 엘티씨 (주) 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물
KR101321029B1 (ko) 2011-06-29 2013-10-28 주식회사 엘지화학 부식 방지제를 포함하는 포토레지스트 제거용 조성물
KR101888695B1 (ko) 2012-04-13 2018-08-14 동우 화인켐 주식회사 유-무기 하이브리드형 배향막 제거 조성물
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
JP6359276B2 (ja) * 2014-01-08 2018-07-18 東栄化成株式会社 剥離剤及び塗膜の剥離方法
TWI746419B (zh) * 2014-02-06 2021-11-21 美商慧盛材料美國有限責任公司 光阻劑剝離溶液
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
JP6109896B2 (ja) * 2015-09-03 2017-04-05 日新製鋼株式会社 金属板からレジスト膜を除去する方法およびエッチングされた金属板の製造方法
KR20170084578A (ko) * 2016-01-12 2017-07-20 동우 화인켐 주식회사 컬러 레지스트 또는 유기계 절연막 박리액 조성물
TWI608311B (zh) * 2016-03-25 2017-12-11 達興材料股份有限公司 一種光阻脫除組成物及一種利用該光阻脫除組成物進行微影製程的電子元件的製造方法
CN105886130A (zh) * 2016-04-18 2016-08-24 广东壮丽彩印股份有限公司 一种包装印刷用塑料薄膜的水基脱胶剂
CN108375879A (zh) * 2017-10-26 2018-08-07 信丰正天伟电子科技有限公司 一种线路板印制成像后的干膜剥除剂
CN109976109A (zh) * 2017-12-27 2019-07-05 安集微电子科技(上海)股份有限公司 一种光刻胶去除剂
JP6774589B1 (ja) * 2019-01-28 2020-10-28 三菱製紙株式会社 樹脂組成物のエッチング液及びエッチング方法
JP7487920B2 (ja) * 2019-09-26 2024-05-21 化研テック株式会社 塗膜剥離剤及び塗膜の剥離方法
CN112255899A (zh) * 2020-11-24 2021-01-22 合肥普庆新材料科技有限公司 一种水性pi膜剥离液及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001022095A (ja) * 1999-07-02 2001-01-26 Nippon Zeon Co Ltd ポジ型レジスト用剥離液
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62227153A (ja) * 1986-03-28 1987-10-06 Oji Paper Co Ltd Ps版用画像消去液
JP3121185B2 (ja) * 1993-10-26 2000-12-25 東京応化工業株式会社 ポジ型レジスト用剥離液
JP3406055B2 (ja) * 1994-03-31 2003-05-12 東京応化工業株式会社 ポジ型レジスト用剥離液
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001022095A (ja) * 1999-07-02 2001-01-26 Nippon Zeon Co Ltd ポジ型レジスト用剥離液
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法

Also Published As

Publication number Publication date
WO2009051237A1 (ja) 2009-04-23
JPWO2009051237A1 (ja) 2011-03-03
KR101286777B1 (ko) 2013-07-17
KR20100077023A (ko) 2010-07-06
CN101878452A (zh) 2010-11-03
JP5318773B2 (ja) 2013-10-16

Similar Documents

Publication Publication Date Title
CN101878452B (zh) 剥离液组合物、使用了该剥离液组合物的树脂层的剥离方法
TWI362571B (en) Stripper composition for photoresist
JP4208924B2 (ja) 非水性、非腐食性マイクロエレクトロニクス洗浄組成物
US6440326B1 (en) Photoresist removing composition
KR20020012141A (ko) 스트리핑 조성물
WO2015056428A1 (ja) レジスト剥離液
KR20010034007A (ko) 개선된 수성 스트립핑 및 세정 조성물
CN102472984B (zh) 剥除铜或铜合金光阻的组成物
CN102124414A (zh) 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法
CN103809396A (zh) 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法
TWI406112B (zh) 光阻清除組成物及清除光阻之方法
KR100554685B1 (ko) 레지스트박리제 조성물
KR100544889B1 (ko) 포토레지스트용 스트리퍼 조성물
CN109143800A (zh) 一种通用型光刻胶剥离液及其应用
KR100850163B1 (ko) 포토레지스트용 스트리퍼 조성물
TW546553B (en) Photoresist stripping liquid composition and a method of stripping photoresists using the same
JP3233379B2 (ja) レジスト用剥離液組成物
KR20100033649A (ko) 포토레지스트용 스트리퍼 조성물
JPH11311867A (ja) 剥離剤組成物
US20040185370A1 (en) Resist remover composition
KR101292497B1 (ko) 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법
KR100568558B1 (ko) 구리 배선용 포토레지스트 스트리퍼 조성물
KR20040037643A (ko) 후-스트립 세정제 조성물 및 그를 이용한 포토레지스트스트립 공정 후의 반도체 소자 또는 액정표시소자의 세정방법
US20040152022A1 (en) Resist remover composition
KR101374686B1 (ko) 포토레지스트용 스트리퍼 조성물

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: HENKEL INTELLECTUAL PROPERTY AND HOLDINGS CO., LTD

Free format text: FORMER OWNER: HENKEL US IP LLC

Effective date: 20140827

Owner name: HENKEL US IP LLC

Free format text: FORMER OWNER: HENKEL CORP.

Effective date: 20140827

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20140827

Address after: Dusseldorf

Applicant after: THE DIAL Corp.

Address before: American Connecticut

Applicant before: Henkel American Intellectual Property LLC

Effective date of registration: 20140827

Address after: American Connecticut

Applicant after: Henkel American Intellectual Property LLC

Address before: American Connecticut

Applicant before: Henkel Corp.

C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220727

Address after: Dusseldorf

Patentee after: HENKEL AG & Co.KGaA

Address before: Dusseldorf

Patentee before: THE DIAL Corp.