CN101874272B - 用于提高电子电路中成品率的方法和设备 - Google Patents

用于提高电子电路中成品率的方法和设备 Download PDF

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Publication number
CN101874272B
CN101874272B CN2008801175383A CN200880117538A CN101874272B CN 101874272 B CN101874272 B CN 101874272B CN 2008801175383 A CN2008801175383 A CN 2008801175383A CN 200880117538 A CN200880117538 A CN 200880117538A CN 101874272 B CN101874272 B CN 101874272B
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CN
China
Prior art keywords
circuit
voltage level
weak
memory
partition
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Expired - Fee Related
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CN2008801175383A
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English (en)
Chinese (zh)
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CN101874272A (zh
Inventor
R·B·戴尔
R·A·柯勒
R·J·麦克帕特兰德
范海光
W·E·沃纳
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Agere Systems LLC
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Agere Systems LLC
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Publication of CN101874272A publication Critical patent/CN101874272A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Power Sources (AREA)
CN2008801175383A 2008-01-30 2008-01-30 用于提高电子电路中成品率的方法和设备 Expired - Fee Related CN101874272B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/052454 WO2009096957A1 (en) 2008-01-30 2008-01-30 Method and apparatus for increasing yeild in an electronic circuit

Publications (2)

Publication Number Publication Date
CN101874272A CN101874272A (zh) 2010-10-27
CN101874272B true CN101874272B (zh) 2013-08-14

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CN2008801175383A Expired - Fee Related CN101874272B (zh) 2008-01-30 2008-01-30 用于提高电子电路中成品率的方法和设备

Country Status (7)

Country Link
US (1) US7940594B2 (https=)
EP (1) EP2240936A1 (https=)
JP (1) JP2011511395A (https=)
KR (1) KR20100121475A (https=)
CN (1) CN101874272B (https=)
TW (1) TWI479500B (https=)
WO (1) WO2009096957A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011511395A (ja) 2008-01-30 2011-04-07 アギア システムズ インコーポレーテッド 電子回路において歩留りを向上させるための方法及び装置
US8390146B2 (en) * 2008-02-27 2013-03-05 Panasonic Corporation Semiconductor integrated circuit and various devices provided with the same
DE202009007395U1 (de) * 2009-05-19 2009-08-20 Balluff Gmbh Stromversorgungs-Anschlussvorrichtung für ein parametrierbares elektrisches Gerät
CN102468650B (zh) * 2010-11-18 2015-07-08 英业达股份有限公司 多电源供电装置
TWI492471B (zh) * 2010-12-20 2015-07-11 英業達股份有限公司 多電源供電裝置
US9786385B2 (en) * 2015-03-02 2017-10-10 Oracle International Corporation Memory power selection using local voltage regulators
US10664035B2 (en) * 2017-08-31 2020-05-26 Qualcomm Incorporated Reconfigurable power delivery networks

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1414563A (zh) * 2001-10-23 2003-04-30 株式会社日立制作所 半导体器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10214122A (ja) * 1996-11-27 1998-08-11 Yamaha Corp 降圧回路および集積回路
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
US20030076729A1 (en) * 2001-10-24 2003-04-24 Fetzer Eric S. Method and apparatus for reducing average power and increasing cache performance by modulating power supplies
KR100488544B1 (ko) * 2002-11-11 2005-05-11 삼성전자주식회사 반도체 메모리장치의 블록선택정보를 이용한 뱅크전압제어장치 및 그 제어방법
US7456525B2 (en) * 2004-07-09 2008-11-25 Honeywell International Inc. Multi-output power supply device for power sequencing
JP2006228277A (ja) * 2005-02-15 2006-08-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7236396B2 (en) * 2005-06-30 2007-06-26 Texas Instruments Incorporated Area efficient implementation of small blocks in an SRAM array
ITVA20060081A1 (it) * 2006-12-22 2008-06-23 St Microelectronics Srl Riduzione del consumo da parte di un sistema elettronico integrato comprendente distinte risorse statiche ad accesso casuale di memorizzazione dati
JP2008251603A (ja) * 2007-03-29 2008-10-16 Toshiba Corp 半導体集積回路
JP2011511395A (ja) 2008-01-30 2011-04-07 アギア システムズ インコーポレーテッド 電子回路において歩留りを向上させるための方法及び装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1414563A (zh) * 2001-10-23 2003-04-30 株式会社日立制作所 半导体器件

Also Published As

Publication number Publication date
TWI479500B (zh) 2015-04-01
WO2009096957A1 (en) 2009-08-06
JP2011511395A (ja) 2011-04-07
CN101874272A (zh) 2010-10-27
US7940594B2 (en) 2011-05-10
KR20100121475A (ko) 2010-11-17
TW200933642A (en) 2009-08-01
US20100238751A1 (en) 2010-09-23
EP2240936A1 (en) 2010-10-20

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