KR20100121475A - 전자 회로의 수율을 증가시키는 방법 및 장치 - Google Patents

전자 회로의 수율을 증가시키는 방법 및 장치 Download PDF

Info

Publication number
KR20100121475A
KR20100121475A KR1020107017220A KR20107017220A KR20100121475A KR 20100121475 A KR20100121475 A KR 20100121475A KR 1020107017220 A KR1020107017220 A KR 1020107017220A KR 20107017220 A KR20107017220 A KR 20107017220A KR 20100121475 A KR20100121475 A KR 20100121475A
Authority
KR
South Korea
Prior art keywords
voltage level
circuit
memory
voltage
compartment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107017220A
Other languages
English (en)
Korean (ko)
Inventor
리차드 브루스 델
로스 에이 코흘러
리차드 제이 맥파틀랜드
하이 큐앙 팜
웨인 이 워너
Original Assignee
에이저 시스템즈 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이저 시스템즈 인크 filed Critical 에이저 시스템즈 인크
Publication of KR20100121475A publication Critical patent/KR20100121475A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Power Sources (AREA)
KR1020107017220A 2008-01-30 2008-01-30 전자 회로의 수율을 증가시키는 방법 및 장치 Ceased KR20100121475A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/052454 WO2009096957A1 (en) 2008-01-30 2008-01-30 Method and apparatus for increasing yeild in an electronic circuit

Publications (1)

Publication Number Publication Date
KR20100121475A true KR20100121475A (ko) 2010-11-17

Family

ID=39705034

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107017220A Ceased KR20100121475A (ko) 2008-01-30 2008-01-30 전자 회로의 수율을 증가시키는 방법 및 장치

Country Status (7)

Country Link
US (1) US7940594B2 (https=)
EP (1) EP2240936A1 (https=)
JP (1) JP2011511395A (https=)
KR (1) KR20100121475A (https=)
CN (1) CN101874272B (https=)
TW (1) TWI479500B (https=)
WO (1) WO2009096957A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011511395A (ja) 2008-01-30 2011-04-07 アギア システムズ インコーポレーテッド 電子回路において歩留りを向上させるための方法及び装置
US8390146B2 (en) * 2008-02-27 2013-03-05 Panasonic Corporation Semiconductor integrated circuit and various devices provided with the same
DE202009007395U1 (de) * 2009-05-19 2009-08-20 Balluff Gmbh Stromversorgungs-Anschlussvorrichtung für ein parametrierbares elektrisches Gerät
CN102468650B (zh) * 2010-11-18 2015-07-08 英业达股份有限公司 多电源供电装置
TWI492471B (zh) * 2010-12-20 2015-07-11 英業達股份有限公司 多電源供電裝置
US9786385B2 (en) * 2015-03-02 2017-10-10 Oracle International Corporation Memory power selection using local voltage regulators
US10664035B2 (en) * 2017-08-31 2020-05-26 Qualcomm Incorporated Reconfigurable power delivery networks

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10214122A (ja) * 1996-11-27 1998-08-11 Yamaha Corp 降圧回路および集積回路
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
JP2003132683A (ja) * 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
US20030076729A1 (en) * 2001-10-24 2003-04-24 Fetzer Eric S. Method and apparatus for reducing average power and increasing cache performance by modulating power supplies
KR100488544B1 (ko) * 2002-11-11 2005-05-11 삼성전자주식회사 반도체 메모리장치의 블록선택정보를 이용한 뱅크전압제어장치 및 그 제어방법
US7456525B2 (en) * 2004-07-09 2008-11-25 Honeywell International Inc. Multi-output power supply device for power sequencing
JP2006228277A (ja) * 2005-02-15 2006-08-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7236396B2 (en) * 2005-06-30 2007-06-26 Texas Instruments Incorporated Area efficient implementation of small blocks in an SRAM array
ITVA20060081A1 (it) * 2006-12-22 2008-06-23 St Microelectronics Srl Riduzione del consumo da parte di un sistema elettronico integrato comprendente distinte risorse statiche ad accesso casuale di memorizzazione dati
JP2008251603A (ja) * 2007-03-29 2008-10-16 Toshiba Corp 半導体集積回路
JP2011511395A (ja) 2008-01-30 2011-04-07 アギア システムズ インコーポレーテッド 電子回路において歩留りを向上させるための方法及び装置

Also Published As

Publication number Publication date
TWI479500B (zh) 2015-04-01
CN101874272B (zh) 2013-08-14
WO2009096957A1 (en) 2009-08-06
JP2011511395A (ja) 2011-04-07
CN101874272A (zh) 2010-10-27
US7940594B2 (en) 2011-05-10
TW200933642A (en) 2009-08-01
US20100238751A1 (en) 2010-09-23
EP2240936A1 (en) 2010-10-20

Similar Documents

Publication Publication Date Title
US10692583B2 (en) Multi-channel package, and test apparatus and test method of testing the same
US8817559B2 (en) Semiconductor device and manufacturing method thereof
US8023348B2 (en) Method and apparatus for testing a memory device
US8687444B2 (en) Semiconductor device and manufacturing method thereof
US10395748B2 (en) Shared error detection and correction memory
US20120182816A1 (en) Semiconductor device and manufacturing method thereof
US10319456B2 (en) Apparatus and method for measuring performance of memory array
KR20100121475A (ko) 전자 회로의 수율을 증가시키는 방법 및 장치
US20180019024A1 (en) Semiconductor memory device for performing a post package repair operation and operating method thereof
US10665316B2 (en) Memory device
US9620243B2 (en) Test system simultaneously testing semiconductor devices
US20070140034A1 (en) Semiconductor apparatus, semiconductor storage apparatus, control signal generation method, and replacing method
KR20080106323A (ko) 전원 테스트 구조
US11854639B2 (en) Test circuit in scribe region for memory failure analysis
US9793009B2 (en) Repair information storage circuit and semiconductor apparatus including the same
JP2008071407A (ja) 半導体記憶装置
KR100916009B1 (ko) 반도체 메모리 장치의 테스트 회로 및 테스트 방법
KR20160056755A (ko) 반도체 장치의 빌트 인 테스트 회로
US7743291B2 (en) Semiconductor memory device
JP2002222922A (ja) 半導体記憶装置
Meena Implementation of ReBISR scheme for RAMs Using Spare Elements
KR19990065216A (ko) 향상된 특성을 갖는 반도체 메모리 장치

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100730

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20120905

Comment text: Request for Examination of Application

AMND Amendment
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20131028

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20140522

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20131028

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20140822

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20140522

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Appeal identifier: 2014101005314

Request date: 20140822

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20140822

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20140822

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20131227

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20130425

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20120905

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20140822

Effective date: 20150123

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20150123

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20140822

Decision date: 20150123

Appeal identifier: 2014101005314