TWI479500B - 在電子電路中用以增加良率之方法及裝置 - Google Patents
在電子電路中用以增加良率之方法及裝置 Download PDFInfo
- Publication number
- TWI479500B TWI479500B TW097108209A TW97108209A TWI479500B TW I479500 B TWI479500 B TW I479500B TW 097108209 A TW097108209 A TW 097108209A TW 97108209 A TW97108209 A TW 97108209A TW I479500 B TWI479500 B TW I479500B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- voltage
- memory
- voltage level
- weak
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 34
- 230000015654 memory Effects 0.000 claims description 231
- 230000006870 function Effects 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010998 test method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
- Power Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2008/052454 WO2009096957A1 (en) | 2008-01-30 | 2008-01-30 | Method and apparatus for increasing yeild in an electronic circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200933642A TW200933642A (en) | 2009-08-01 |
| TWI479500B true TWI479500B (zh) | 2015-04-01 |
Family
ID=39705034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097108209A TWI479500B (zh) | 2008-01-30 | 2008-03-07 | 在電子電路中用以增加良率之方法及裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7940594B2 (https=) |
| EP (1) | EP2240936A1 (https=) |
| JP (1) | JP2011511395A (https=) |
| KR (1) | KR20100121475A (https=) |
| CN (1) | CN101874272B (https=) |
| TW (1) | TWI479500B (https=) |
| WO (1) | WO2009096957A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011511395A (ja) | 2008-01-30 | 2011-04-07 | アギア システムズ インコーポレーテッド | 電子回路において歩留りを向上させるための方法及び装置 |
| US8390146B2 (en) * | 2008-02-27 | 2013-03-05 | Panasonic Corporation | Semiconductor integrated circuit and various devices provided with the same |
| DE202009007395U1 (de) * | 2009-05-19 | 2009-08-20 | Balluff Gmbh | Stromversorgungs-Anschlussvorrichtung für ein parametrierbares elektrisches Gerät |
| CN102468650B (zh) * | 2010-11-18 | 2015-07-08 | 英业达股份有限公司 | 多电源供电装置 |
| TWI492471B (zh) * | 2010-12-20 | 2015-07-11 | 英業達股份有限公司 | 多電源供電裝置 |
| US9786385B2 (en) * | 2015-03-02 | 2017-10-10 | Oracle International Corporation | Memory power selection using local voltage regulators |
| US10664035B2 (en) * | 2017-08-31 | 2020-05-26 | Qualcomm Incorporated | Reconfigurable power delivery networks |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6031778A (en) * | 1997-03-19 | 2000-02-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit |
| US20030076729A1 (en) * | 2001-10-24 | 2003-04-24 | Fetzer Eric S. | Method and apparatus for reducing average power and increasing cache performance by modulating power supplies |
| US20040090854A1 (en) * | 2002-11-11 | 2004-05-13 | Ho-Cheol Lee | Apparatus for and method of controlling AIVC through block selection information in semiconductor memory device |
| US20060268647A1 (en) * | 2001-10-23 | 2006-11-30 | Hitachi, Ltd. | Semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10214122A (ja) * | 1996-11-27 | 1998-08-11 | Yamaha Corp | 降圧回路および集積回路 |
| US7456525B2 (en) * | 2004-07-09 | 2008-11-25 | Honeywell International Inc. | Multi-output power supply device for power sequencing |
| JP2006228277A (ja) * | 2005-02-15 | 2006-08-31 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US7236396B2 (en) * | 2005-06-30 | 2007-06-26 | Texas Instruments Incorporated | Area efficient implementation of small blocks in an SRAM array |
| ITVA20060081A1 (it) * | 2006-12-22 | 2008-06-23 | St Microelectronics Srl | Riduzione del consumo da parte di un sistema elettronico integrato comprendente distinte risorse statiche ad accesso casuale di memorizzazione dati |
| JP2008251603A (ja) * | 2007-03-29 | 2008-10-16 | Toshiba Corp | 半導体集積回路 |
| JP2011511395A (ja) | 2008-01-30 | 2011-04-07 | アギア システムズ インコーポレーテッド | 電子回路において歩留りを向上させるための方法及び装置 |
-
2008
- 2008-01-30 JP JP2010544941A patent/JP2011511395A/ja active Pending
- 2008-01-30 EP EP08728555A patent/EP2240936A1/en not_active Withdrawn
- 2008-01-30 US US12/295,518 patent/US7940594B2/en not_active Expired - Fee Related
- 2008-01-30 KR KR1020107017220A patent/KR20100121475A/ko not_active Ceased
- 2008-01-30 CN CN2008801175383A patent/CN101874272B/zh not_active Expired - Fee Related
- 2008-01-30 WO PCT/US2008/052454 patent/WO2009096957A1/en not_active Ceased
- 2008-03-07 TW TW097108209A patent/TWI479500B/zh not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6031778A (en) * | 1997-03-19 | 2000-02-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit |
| US20060268647A1 (en) * | 2001-10-23 | 2006-11-30 | Hitachi, Ltd. | Semiconductor device |
| US7272068B2 (en) * | 2001-10-23 | 2007-09-18 | Hitachi, Ltd. | Semiconductor device |
| US20030076729A1 (en) * | 2001-10-24 | 2003-04-24 | Fetzer Eric S. | Method and apparatus for reducing average power and increasing cache performance by modulating power supplies |
| US20040090854A1 (en) * | 2002-11-11 | 2004-05-13 | Ho-Cheol Lee | Apparatus for and method of controlling AIVC through block selection information in semiconductor memory device |
| US6928023B2 (en) * | 2002-11-11 | 2005-08-09 | Samsung Electronics Co., Ltd. | Apparatus for and method of controlling AIVC through block selection information in semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101874272B (zh) | 2013-08-14 |
| WO2009096957A1 (en) | 2009-08-06 |
| JP2011511395A (ja) | 2011-04-07 |
| CN101874272A (zh) | 2010-10-27 |
| US7940594B2 (en) | 2011-05-10 |
| KR20100121475A (ko) | 2010-11-17 |
| TW200933642A (en) | 2009-08-01 |
| US20100238751A1 (en) | 2010-09-23 |
| EP2240936A1 (en) | 2010-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |