CN101853780B - 离子辐射损伤预测方法和仿真器以及离子辐射设备和方法 - Google Patents

离子辐射损伤预测方法和仿真器以及离子辐射设备和方法 Download PDF

Info

Publication number
CN101853780B
CN101853780B CN201010151515.3A CN201010151515A CN101853780B CN 101853780 B CN101853780 B CN 101853780B CN 201010151515 A CN201010151515 A CN 201010151515A CN 101853780 B CN101853780 B CN 101853780B
Authority
CN
China
Prior art keywords
incident
ion
distribution
ions
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010151515.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN101853780A (zh
Inventor
久保井信行
小林正治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN101853780A publication Critical patent/CN101853780A/zh
Application granted granted Critical
Publication of CN101853780B publication Critical patent/CN101853780B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Drying Of Semiconductors (AREA)
CN201010151515.3A 2009-03-30 2010-03-23 离子辐射损伤预测方法和仿真器以及离子辐射设备和方法 Expired - Fee Related CN101853780B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP081098/09 2009-03-30
JP2009081098A JP5428450B2 (ja) 2009-03-30 2009-03-30 イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法

Publications (2)

Publication Number Publication Date
CN101853780A CN101853780A (zh) 2010-10-06
CN101853780B true CN101853780B (zh) 2012-05-23

Family

ID=42782768

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010151515.3A Expired - Fee Related CN101853780B (zh) 2009-03-30 2010-03-23 离子辐射损伤预测方法和仿真器以及离子辐射设备和方法

Country Status (3)

Country Link
US (2) US8545710B2 (enExample)
JP (1) JP5428450B2 (enExample)
CN (1) CN101853780B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5428450B2 (ja) * 2009-03-30 2014-02-26 ソニー株式会社 イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法
US8234295B2 (en) * 2009-06-03 2012-07-31 International Business Machines Corporation Managing uncertain data using Monte Carlo techniques
EP2549523A4 (en) * 2010-03-16 2016-03-30 Mizuho Information & Res Inst SYSTEM, METHOD AND PROGRAM FOR PREDICTING A FINAL FORM FROM A PLASMA PROCESSING
JP5450275B2 (ja) * 2010-06-14 2014-03-26 株式会社東芝 パターン寸法算出方法およびパターン寸法算出プログラム
JP5732843B2 (ja) * 2010-12-21 2015-06-10 ソニー株式会社 シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム
JP5685762B2 (ja) * 2011-03-07 2015-03-18 みずほ情報総研株式会社 プラズマ加工形状シミュレーション装置及びプログラム
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
US8816281B2 (en) * 2011-03-28 2014-08-26 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing the same
US9064808B2 (en) 2011-07-25 2015-06-23 Synopsys, Inc. Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
US8609550B2 (en) * 2011-09-08 2013-12-17 Synopsys, Inc. Methods for manufacturing integrated circuit devices having features with reduced edge curvature
US9287097B2 (en) * 2011-11-30 2016-03-15 Sony Corporation Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
JP6065612B2 (ja) * 2012-06-28 2017-01-25 ソニー株式会社 シミュレーション方法、シミュレーションプログラム、加工装置およびシミュレータ
US9284218B1 (en) * 2012-06-29 2016-03-15 Corning Incorporated Methods for chemically strengthening glass articles
US8909588B2 (en) * 2012-09-12 2014-12-09 Numerica Corp. Method and system for propagating the state of an object and its uncertainty
JP5974840B2 (ja) * 2012-11-07 2016-08-23 ソニー株式会社 シミュレーション方法、シミュレーションプログラム、シミュレータ、加工装置、半導体装置の製造方法
JP6034700B2 (ja) * 2013-01-09 2016-11-30 株式会社東芝 形状シミュレーション装置、形状シミュレーション方法、および形状シミュレーションプログラム
US10534355B2 (en) * 2015-02-20 2020-01-14 Sony Semiconductor Solutions Corporation Information processing device, processing device, prediction method, and processing method
JP6693133B2 (ja) * 2016-01-13 2020-05-13 ソニー株式会社 成膜シミュレーション方法、プログラム、および半導体加工システム
US20170364624A1 (en) * 2016-06-16 2017-12-21 Toshiba Memory Corporation Method of calculating processed depth and storage medium storing processed-depth calculating program
JP2020509431A (ja) * 2017-02-22 2020-03-26 エーエスエムエル ネザーランズ ビー．ブイ． コンピュータによる計測
JP2019036655A (ja) * 2017-08-18 2019-03-07 ソニーセミコンダクタソリューションズ株式会社 エッチング方法およびエッチング加工装置
US11520953B2 (en) * 2018-05-03 2022-12-06 Lam Research Corporation Predicting etch characteristics in thermal etching and atomic layer etching
US11139402B2 (en) 2018-05-14 2021-10-05 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
CN110120248B (zh) * 2019-04-08 2020-12-25 中国科学院合肥物质科学研究院 模拟纳米晶金属累积离位损伤的方法
US11264458B2 (en) 2019-05-20 2022-03-01 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
KR102180979B1 (ko) * 2019-08-19 2020-11-19 참엔지니어링(주) 처리 장치 및 방법
CN111460655B (zh) * 2020-03-31 2023-10-20 湘潭大学 重离子辐射对SiC MOSFET电学参数影响的分析方法、装置
CN111554354B (zh) * 2020-04-21 2023-03-24 湘潭大学 一种偏置电场下重离子辐射碳化硅二极管的损伤分析方法
CN113984275B (zh) * 2021-12-24 2022-05-10 北京凯世通半导体有限公司 一种通过测量真空度进行超低温离子注入设备监测的方法
CN115410665A (zh) * 2022-08-23 2022-11-29 上海大学 一种czt辐照损伤模拟准确性的验证方法
CN115828614A (zh) * 2022-12-19 2023-03-21 台州学院 一种基于蒙特卡罗方法的原子氧掏蚀反应的模拟方法、设备和存储介质
JP7726953B2 (ja) * 2023-06-30 2025-08-20 日本電子株式会社 試料加工システム、画像生成装置、および画像生成方法
CN119989740B (zh) * 2025-04-11 2025-07-18 全芯智造技术有限公司 用于离子注入仿真的方法、电子设备及存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6029079A (en) * 1997-05-22 2000-02-22 Regents Of The University Of California Evaluated teletherapy source library
CN1661368A (zh) * 2004-02-26 2005-08-31 富士通株式会社 确定离子分布的快速预测方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115071A (ja) 1993-10-15 1995-05-02 Hitachi Ltd 半導体装置の設計方法
JP3546596B2 (ja) * 1996-06-04 2004-07-28 ソニー株式会社 表面形状のシミュレーション方法
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
KR100327337B1 (ko) * 1999-08-17 2002-03-06 윤종용 반도체 장치 제조에서 사용되는 플라즈마에 의해서 유기되는전하 대전 정도를 판별하는 방법 및 이에 이용되는 판별장치
JP3540223B2 (ja) * 1999-11-24 2004-07-07 Ｎｅｃエレクトロニクス株式会社 イオン注入シミュレーションのパラメータ抽出方法、記録媒体
US7135676B2 (en) * 2000-06-27 2006-11-14 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
WO2002045153A1 (fr) * 2000-12-01 2002-06-06 Ebara Corporation Procede et appareil d'inspection utilisant un faisceau d'electrons, et procede de production de dispositif utilisant celui-ci
JP2003092237A (ja) * 2001-07-12 2003-03-28 Toshiba Corp 危険プロセス／パターン検出システム、危険プロセス／パターン検出方法、危険検出プログラム、及び半導体装置の製造方法
US7238597B2 (en) * 2002-09-27 2007-07-03 Brontek Delta Corporation Boron ion delivery system
US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
JP4068481B2 (ja) * 2003-02-28 2008-03-26 株式会社東芝 シミュレーション方法、シミュレーションプログラム、シミュレーション装置および表面反応装置
JP4504027B2 (ja) * 2004-01-09 2010-07-14 株式会社東芝 イオン注入シミュレーション装置、イオン注入シミュレーション方法及びイオン注入シミュレーションプログラム
JP4745035B2 (ja) * 2005-11-24 2011-08-10 株式会社東芝 シミュレーション装置、シミュレーションプログラムおよびシミュレーション方法
CN101432865A (zh) * 2006-03-21 2009-05-13 瓦里安半导体设备公司 具有原位监视和过程参数调谐的等离子体处理方法
US7571420B2 (en) * 2007-02-16 2009-08-04 Intel Corporation Dynamic sampling with efficient model for overlay
US7673278B2 (en) * 2007-11-29 2010-03-02 Tokyo Electron Limited Enhanced process yield using a hot-spot library
JP2010161259A (ja) * 2009-01-09 2010-07-22 Toshiba Corp プロセスシミュレーションプログラム、プロセスシミュレーション方法、プロセスシミュレータ
JP5428450B2 (ja) * 2009-03-30 2014-02-26 ソニー株式会社 イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法
US8557612B2 (en) * 2009-06-26 2013-10-15 California Institute Of Technology Method for fabricating micro and nanostructures in a material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6029079A (en) * 1997-05-22 2000-02-22 Regents Of The University Of California Evaluated teletherapy source library
CN1661368A (zh) * 2004-02-26 2005-08-31 富士通株式会社 确定离子分布的快速预测方法

Also Published As

Publication number Publication date
JP2010232594A (ja) 2010-10-14
US20100243431A1 (en) 2010-09-30
JP5428450B2 (ja) 2014-02-26
CN101853780A (zh) 2010-10-06
US8845913B2 (en) 2014-09-30
US8545710B2 (en) 2013-10-01
US20130344339A1 (en) 2013-12-26

Similar Documents

Publication Publication Date Title
CN101853780B (zh) 离子辐射损伤预测方法和仿真器以及离子辐射设备和方法
JP2010232594A5 (enExample)
US10977405B2 (en) Fill process optimization using feature scale modeling
US20180095936A1 (en) Optimizing a manufacturing or fabrication process using an integrated bayesian statistics and continuum model approach
Cooperberg et al. Semiempirical profile simulation of aluminum etching in a Cl 2/BCl 3 plasma
Kuboi et al. Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model
Meeks et al. Modeling plasma chemistry for microelectronics manufacturing
Kuboi Review and future perspective of feature scale profile modeling for high-performance semiconductor devices
Chanson et al. Global Model of $\hbox {Cl} _ {2}\hbox {/Ar} $ High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP
Boxleitner et al. FIBSIM–dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling
Kim et al. Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C₄F₈/Ar/O₂ Plasma
Shimada et al. Self-consistent modeling of feature profile evolution in plasma etching and deposition
En et al. A new method for determining the secondary electron yield dependence on ion energy for plasma exposed surfaces
Ventzek et al. Application and simulation of low temperature plasma processes in semiconductor manufacturing
Murray et al. Deep interference minima in experimental ionization differential cross sections
Moroz Numerical simulation of feature profile evolution using FPS-3D
Dunn et al. Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond
Kenney et al. Deep learning regression of VLSI plasma etch metrology
KR102495390B1 (ko) 데미지 예측 방법, 프로그램, 및 반도체 가공 시스템
Campo et al. Atom by atom simulations of nanomaterial manipulation: the plasma etching case
Zastrow et al. Double charge exchange from helium neutral beams in a tokamak plasma
Um et al. Prediction model of aspect ratio-dependent etching rate through molecular dynamics-based data processing
Huang Modeling of downstream and direct plasma systems for highly selective and anisotropic etching
Zhang Low Temperature Plasma Etching Control through Ion Energy Angular Distribution and 3-Dimensional Profile Simulation.
Yao SimProfile: A Monte Carlo Surface Profile Simulator with Data-Driven Parameter Calibration

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120523

Termination date: 20150323

EXPY Termination of patent right or utility model