CN101835861A - 粘性膜以及采用该膜的切割芯片结合膜和半导体器件 - Google Patents
粘性膜以及采用该膜的切割芯片结合膜和半导体器件 Download PDFInfo
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Abstract
本发明涉及一种粘性膜、一种切割芯片结合膜和半导体器件。更具体而言,本发明的粘性膜的特征在于:包括基底膜和粘合剂层,并在5至50μm的厚度下具有20至50gf的屈服强度和30至80gf/mm的拉伸弹性区域斜率。在本发明的粘性膜中,控制屈服强度和拉伸弹性区域的斜率从而可以根据粘合剂层的厚度来预判并控制毛刺的发生率。包含该粘性膜的切割芯片结合膜和半导体器件具有低的毛刺发生率以及优异的可加工性和可靠性。
Description
技术领域
本发明涉及一种粘性膜、切割芯片结合膜(dicing die bonding film)和半导体器件。更具体而言,本发明涉及一种控制其粘合剂层的屈服强度和拉伸弹性区域的斜率从而可以预判并控制毛刺发生率的粘性膜以及包括该膜的切割芯片结合膜和半导体器件。
背景技术
通常,制备半导体芯片的方法包括在晶片上形成精细图形的步骤以及抛光和封装晶片的步骤,从而符合最终的器件的标准。所述封装工艺包括:检查晶片的步骤,其中,检查半导体芯片的缺陷;切割步骤,其中,切割晶片将其分成单个芯片;芯片键合(die bodning)的步骤,其中,将分开的芯片附着到引线框的电路膜或承载板上;引线键合(wire bodning)的步骤,其中,用如金属丝的电性连接方法将电路膜或引线框的电路图形连接到设置在半导体芯片上的芯片垫(chip pad)上;模封步骤,其中,用密封剂包绕外部以保护半导体芯片的内部电路和其他部分;切筋(trimming)步骤,其中,切除连接导线的堤坝(dambar);成形步骤,其中,将引线弯曲成所需的形状;以及检查成品的步骤,其中,检查完成的封装的缺陷。
在所述切割步骤中,采用钻石砂轮等将晶片切割成特定的厚度。这里,在适合的温度条件下,在未形成图形的晶片背面层压切割芯片结合膜以固定晶片。
通常,如图2所示,附着到未形成图形的晶片背面的切割芯片结合膜由切割膜和芯片结合膜构成。在切割步骤中,采用钻石砂轮(刀)切割全部晶片以及芯片结合膜的部分基底膜。
在这样的切割步骤中,通过在其上施加过度的压力或机械冲击会损坏晶片并产生碎屑,从而引起频繁地出现毛刺,而毛刺会污染图形。此外,当由于封装的尺寸小而使晶片的厚度变薄并且为了提高生产效率而使切割条件变得严苛时,所述问题就会频繁地发生。尤其是,当晶片的厚度变薄时,在很多情况下即使在芯片上攀移的毛刺具有在前面不会引起任何问题的长度的水平时,这些毛刺也会造成缺陷。
在芯片上攀移的毛刺的成分主要为芯片结合膜。原因如下。切割膜的压敏粘合剂部分被涂覆在基底膜上并与其充分粘附,这样在切割中,即使由压敏粘合剂部分和基底膜引起毛刺,也几乎不会出现毛刺在芯片上攀移的情况。但是,芯片结合膜是通过修整步骤(tailoring process)与切割膜的压敏粘合剂部分一起机械层压并被完全切割的。因此,其粘结强度相对被降低,这样毛刺在芯片上攀移的发生率增加。为解决这一问题,重要的是增加切割膜的压敏粘合剂部分与芯片结合膜的粘附,以及晶片与芯片结合膜的粘附。然而,当粘性膜具有高粘结强度以增强粘附时,其弹性低,这样由拉伸芯片结合膜本身而增加了毛刺的量。当芯片结合膜具有过高的弹性时,其具有低的粘结强度,这样在切割时,晃动增加并且毛刺发生率上升。因此,对于降低毛刺发生率,控制粘性膜的弹性是主要的因素。
在第2005-330300号日本未审查的专利公开中披露了一种粘合剂树脂组合物,其在热固化前于100℃以下具有0.5MPa以下的拉伸弹性,其在热固化后于180℃具有0.2MPa以上的拉伸弹性,以及在热固化后于260℃具有1MPa至10MPa的拉伸弹性。然而,考虑到切割步骤在短时间内产生热,这限制了膜的预期特性,在以特定的升温速度对样品充分施加热的条件下测量弹性。此外,本发明的研究结果证实:尽管组分和弹性相同,但是毛刺发生率也会随厚度而变化,难以通过对弹性的常规测量来控制毛刺。
因此,需要一种可以预判并控制芯片结合膜中的毛刺发生率的新方法,因此需要提供一种具有优异的可加工性和可靠性的半导体器件。
发明内容
技术问题
本发明试图解决现有技术中的上述问题,并且提供了粘性膜以及包括该膜的切割芯片结合膜和半导体器件,在所述粘性膜中,控制粘合剂层的屈服强度和拉伸弹性区域的斜率,以根据粘性膜的厚度预判并控制毛刺发生率。
技术方案
作为解决上述问题的手段,本发明提供了包括基底膜和粘合剂层的粘性膜,其中所述粘合剂层在厚度为5至50μm下屈服强度为20至50gf且拉伸弹性区域的斜率为30至80gf/mm。
作为解决上述问题的另一手段,本发明提供了切割芯片结合膜,其包括切割膜和在所述切割膜的一面形成的根据本发明的粘性膜。
作为解决上述问题的又一手段,本发明提供了半导体晶片,其中将根据本发明的切割芯片结合膜中的粘性膜粘附到晶片的一个面上并将所述切割膜固定到晶片贴片环(ring frame)上。
作为解决上述问题的其他手段,本发明提供了半导体器件,其包括布线基板(wire substrate);粘附到所述布线基板的芯片承载面上的根据本发明的粘合剂层;以及负载于所述粘合剂层上的半导体芯片。
有益效果
本发明通过控制粘性膜的组分和量来控制屈服强度和拉伸弹性区域的斜率。并且包括具有特定屈服强度和拉伸弹性区域斜率的粘性膜的切割芯片结合膜降低了切割步骤中的毛刺发生率,这提高了制备半导体方法的可加工性和可靠性。
附图说明
图1为根据本发明的一个实施方案的粘性膜(芯片结合膜)的横截面图。
图2为根据本发明的一个实施方案的切割芯片结合膜的横截面图。
图3为根据本发明的一个实施方案的半导体器件的横截面图。
图4为从对粘合剂层的拉伸实验中得到的拉伸曲线,其显示了屈服强度和拉伸弹性区域的斜率。
具体实施方式
本发明涉及包括基底膜和粘合剂层的粘性膜,其中,在5至50μm的厚度下,所述粘合剂层的屈服强度为20至50gf且拉伸弹性区域的斜率为30至80gf/mm。根据粘合剂层的厚度可以控制所述屈服强度和拉伸弹性区域斜率。优选的是,当粘合剂层的厚度大时,降低屈服强度和拉伸弹性区域的斜率,而当厚度小时,增加这些值。
在本发明中,认为毛刺发生率的特性随粘合剂层的厚度而变化。本发明的特征在于,根据粘合剂层的厚度确定屈服强度和拉伸弹性区域的斜率从而预判并控制毛刺发生率。
如果在所述粘性膜中的粘合剂层的屈服强度小于20gf,膜本身的拉伸会提高毛刺发生率。如果其大于50gf,由于粘结强度的降低会提高毛刺发生率。此外,如果粘合剂层的拉伸弹性区域斜率小于30gf/mm,膜本身的拉伸会提高毛刺发生率。如果其大于80gf/mm,由于粘结强度的降低会提高毛刺发生率。
在本申请中,″屈服强度″是指在对粘合剂层的拉伸实验中得到的拉伸曲线中从弹性区域到塑性区域的转折点的应力,而″拉伸弹性区域的斜率″是指在所述拉伸曲线中弹性区域的斜率。
可以通过粘合剂层组合物的组分、比例和量来控制屈服强度和拉伸弹性区域的斜率。下文描述了控制所述粘合剂层的屈服强度和拉伸弹性区域斜率的具体方法。
对粘合剂层组合物的组分不作特别限定。但是,例如可以使用热塑性树脂和热固性树脂的混合物。在本申请中,优选的是与硬化剂一起使用热固性树脂。就弹性和初始粘附特性而言,所述热塑性树脂是理想的组分,而就高温下的结合强度和耐热性而言,所述热固性树脂是理想的组分。
当使用热塑性树脂和热固性树脂的混合物作为所述粘合剂层组合物的组分时,可以通过调节所述热塑性树脂与包含硬化剂的热固性树脂的比例来控制屈服强度和拉伸弹性区域的斜率。当热塑性树脂的比例变高时,屈服强度和拉伸弹性区域的斜率降低。
为得到根据本发明的屈服强度和拉伸弹性区域斜率,所述热塑性树脂和包含硬化剂的热固性树脂的混合比例(热塑性树脂/热固性树脂)优选为1至5,并且更优选为1至3。如果所述比例小于1,在修整粘性膜中可加工性降低。如果所述比例大于5,拉伸进行过度,会产生很多毛刺,耐热性降低,从而引起可靠性的问题。
在本发明中可用的热塑性树脂的例子包括包含可与热固性树脂交联的官能团的丙烯酸共聚物,作为其具体的例子,可使用下列单体中的一种或多种:含有羟基的单体,例如(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸2-羟丁酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸2-羟基乙二醇酯或(甲基)丙烯酸2-羟基丙二醇酯;含有羧基的单体,例如丙烯酸、甲基丙烯酸、丙烯酸二聚体、衣康酸或马来酸;含有氰基的单体,例如(甲基)丙烯腈;以及含有缩水甘油基的单体,例如(甲基)丙烯酸缩水甘油酯。
当将丙烯酸共聚物用作热塑性树脂时,可以通过调节该热塑性树脂的玻璃化转变温度来控制所述粘合剂层的屈服强度和拉伸弹性区域的斜率。当其具有低的玻璃化转变温度时,屈服强度和拉伸弹性区域斜率降低。
为得到根据本发明的屈服强度和拉伸弹性区域斜率,所述丙烯酸共聚物的玻璃化转变温度优选为-10至30℃,并且更优选为0至20℃。如果所述玻璃化转变温度小于-10℃,拉伸进行过度且毛刺发生率变得更高,从而使加工性能大为劣化。此外,如果所述玻璃化转变温度大于30℃,弹性增加,压敏粘合性能降低,并且在层压中缺陷出现率变得更高。
此外,优选的是,所述丙烯酸共聚物的分子量为100,000至2,500,000。如果所述分子量小于100,000,可能会引起耐热性的问题。如果其大于2,500,000,可能会引起填充性能的问题。
在本发明中,可用的热塑性树脂为可通过加热和使化合物中的官能团反应来硬化的树脂,其包括环氧树脂,优选与环氧硬化剂一起使用。作为所述环氧树脂的具体例子,其可包括甲酚酚醛环氧树脂(cresol novolac epoxyresin)、双酚A型酚醛环氧树脂(bisphenol A type novolac epoxy resin)、苯酚酚醛环氧树脂(phenol novolac epoxy reisn)、四官能环氧树脂、联苯型环氧树脂、三酚甲烷型环氧树脂、烷基改性的三酚甲烷环氧树脂、萘型环氧树脂、二环戊二烯型环氧树脂、二环戊二烯改性的酚型环氧树脂等。可单独或以两种以上的混合物使用上述树脂。
此外,优选的是,所述环氧硬化剂包括多官能酚树脂,并且更优选的是,就高温下的抗湿性而言,当所述多官能酚树脂通过PCT(高压炉试验:121℃/100%/2atm)处理48h时,其吸湿率为2.0wt%以下。作为所述多官能酚树脂的具体例子,其可包括双酚A型树脂、苯酚酚醛树脂、甲酚酚醛树脂、双酚A型酚醛树脂、苯酚芳烷基树脂、多官能酚醛树脂、双环戊二烯苯酚酚醛树脂、氨基三嗪苯酚酚醛树脂、聚丁二烯苯酚酚醛树脂等。可单独或以两种以上混合物来使用上述树脂。
此外,当所述粘合剂层组合物包含填料时,可以通过调节填料的量来控制屈服强度和拉伸弹性区域的斜率。当填料的量增加时,屈服强度和拉伸弹性区域的斜率提高。当本发明的粘合剂层组合物包含填料时,相对于100重量份的粘合剂层组合物,填料的量优选为5至20重量份,并且更优选8至15重量份。如果所述量小于5重量份,由于热膨胀系数和毛刺发生率高而出现可靠性的问题。如果其大于20重量份,则粘附性能降低。
作为所述填料的一类,其可包括:陶瓷颗粒,例如二氧化硅或氧化铝;氢氧化物颗粒,例如氢氧化铝或氢氧化钙;以及基于碳的颗粒等。它们可以是单独的或者是两种以上颗粒的混合物。优选的是,使用陶瓷颗粒,其在高温下具有优异的绝缘性和稳定性并且容易将其制成纳米尺寸。更优选的是,使用二氧化硅。此外,优选使用平均粒径为1至100nm的填料。如果所述平均粒径小于1nm,会出现分散性的问题。如果大于100nm,其具有优异的填充性能,但由于弹性的增加不高而使毛刺发生率高。
本申请包括了作为可用的例子的所述各种材料。在制备本发明的膜中,本发明并不限于所述的材料,可使用本领域的常用材料而没有限制。
此外,通过制备芯片结合膜中的干燥温度、干燥速率、缠绕速度(windvelocity)、空气体积或搅拌条件以及粘合剂层组合物的组分、比例或量也可以控制屈服强度和拉伸弹性区域的斜率。
并不特别限定本发明的粘性膜的制备方法。例如,可以通过下列步骤制备该粘性膜:第一步,将粘合剂层组合物溶解或分散在溶剂中以制备树脂清漆;第二步,将所述树脂清漆涂覆在基底膜上;以及第三步,加热所述基底膜以去除溶剂。
在所述第一步中,如上限定粘合剂层组合物的组分和量,并且作为用于制备所述粘合剂层组合物的清漆溶剂,可以经常使用甲乙酮(MEK)、丙酮、甲苯、二甲基甲酰胺(DMF)、甲基溶纤剂(MCS)、四氢呋喃(THF)、N-甲基吡咯烷酮(NMP)等。当所述粘合剂层组合物包含填料时,可以单独甚或以其组合来使用球磨机、珠磨机、3辊研磨机或粉碎机来增强所述粘合剂层的分散性。作为小球或珠子的材料,其可包括玻璃、氧化铝、锆等。就颗粒的分散性而言,小球或珠子的材料优选为锆。
在所述第二步中,作为可用的基底膜可以使用塑料膜,例如聚对苯二甲酸乙二酯膜、聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、氯乙烯共聚物膜或聚酰亚胺膜等。此外,可用脱模剂来处理所述基底膜的表面。作为在脱模处理中使用的脱模剂,使用了基于醇酸-、硅-、氟-、不饱和酯-、聚烯烃-、蜡-等的防粘剂。特别是,由于其耐热性而优选基于醇酸-、硅-或氟-的防粘剂。
可使用已知的方法作为在所述基底膜上涂覆树脂清漆的方法。例如,其可包括刮刀涂覆法、喷涂法、凹版印刷涂覆法、幕式淋涂法、缺角机涂覆法(a comma coat method)、唇嘴涂覆法(a lip coat method)等。
在通过加热所述基底膜来去除溶剂的第三步中,优选在70至250℃下加热5至20分钟。
本发明还涉及一种切割芯片结合膜,其包括切割膜;以及在所述切割膜的一个面上形成的根据本发明的粘性膜。
优选的是,所述切割膜包括基底膜和在所述基底膜上形成的压敏粘合剂层。
以下参照附图2说明根据本发明的切割芯片结合膜。
所述切割膜的基底膜(40)可为聚乙烯膜、聚丙烯膜、聚四氟乙烯膜、聚对苯二甲酸乙二酯膜、聚氨酯膜、乙烯乙烯基丙酮膜、乙烯-丙烯共聚物膜、乙烯-丙烯酸乙基共聚物膜、乙烯-丙烯酸甲基共聚物膜等。如果需要,优选进行如底漆涂覆、电晕处理、蚀刻处理和UV处理的表面处理。当通过UV照射固化所述压敏粘合剂时,也可选择具有良好的光学透明度的膜。
所述切割膜的压敏粘合剂层(30)可为常用的紫外线固化压敏粘合剂或热固化压敏粘合剂。当为紫外线固化压敏粘合剂时,通过用紫外光从基底膜面对其照射来降低粘结强度,从而增加压敏粘合剂的内聚力和玻璃化转变温度。当为热固化压敏粘合剂时,通过加热降低粘结强度。
作为根据本发明的切割芯片结合膜的制备方法,可以使用热辊层合切割膜和粘性膜的方法或者对切割膜和粘性膜层压的方法。就连续加工的能力和效率而言,优选热辊层合法。优选的是,热辊层合法的条件为在10至100℃下压力为0.1至10kgf/cm2。
本发明还涉及半导体晶片,其中,将根据本发明的切割芯片结合膜的粘性膜粘附到晶片的一个面上,并将该切割芯片结合膜的切割膜固定到晶片贴片环上。
通过在0至180℃的层合温度下将所述切割芯片结合膜的粘性膜粘结到半导体晶片的背面并将所述切割芯片结合膜的切割膜固定到晶片贴片环上可以制备这种半导体晶片。
本发明还涉及半导体器件,其包括布线基板;粘附到所述布线基板的芯片承载面上的根据本发明的粘性膜;和负载于所述粘性膜上的半导体芯片。
如下说明了制备所述半导体器件的方法。
采用切割装置将粘附了如上所述的切割芯片结合膜的半导体晶片完全切割成单独的芯片。
然后,如果切割膜为紫外线固化压敏粘合剂,通过用紫外光从基底膜面对其照射来固化该膜。如果其为热固化压敏粘合剂,通过升高温度来固化该膜。在如上所述的用紫外光或热固化的压敏粘合剂中,降低了对粘合剂的紧密粘结强度,因此在后续步骤中容易进行芯片的拾起。此时,如果需要,可以使切割芯片结合膜扩缝。如果进行这样的扩缝步骤,芯片间的间隔扩大,这样就容易进行拾起,并且产生了粘合剂层和压敏粘合剂层间的蠕变从而改善了拾起特性。接着进行芯片拾起。
此时,可以从切割芯片结合膜的粘合剂层上剥离下半导体晶片和切割芯片结合膜的压敏粘合剂层,从而获得其上仅粘附粘合剂层的芯片。将其上粘附所述粘合剂层的芯片粘附到用于半导体的基板上。芯片的粘附温度通常为100至180℃,粘附时间为0.5至3秒,且粘附压力为0.5至2kgf/cm2。当在该步骤中使用弯曲的有机布线基板时,就需要填充性能。
进行所述步骤后,通过引线键合和模封步骤获得半导体器件。
制备半导体器件的方法不局限于上述步骤,而是也可以包括任何步骤并改变步骤的顺序。例如,其也可通过压敏粘合剂固化-切割-扩缝步骤或切割-扩缝-压敏粘合剂层固化步骤来进行。在芯片粘附步骤后,还可进一步包括加热或冷却步骤。
在下文中,通过根据本发明的实施例更详细地说明本发明。然而,本发明的范围并不局限于如下所示的实施例。
实施例
实施例1
将包含66重量份的基于芳香基的环氧树脂(酚醛型环氧树脂,软化点80℃)、34重量份的作为环氧树脂硬化剂的苯酚树脂(苯酚酚醛树脂,软化点90℃)、200重量份的含有环氧基的丙烯酸共聚物(SA-55,LG化学株式会社生产,Tg=9℃,重均分子量500,000)、0.3重量份的硬化促进剂(2-苯基-4-甲基咪唑)(2P4MZ)和45重量份的作为填料的二氧化硅(熔融的二氧化硅,平均粒径75nm)的组合物在甲乙酮中搅拌并混合以制备清漆。
将制得的清漆涂覆在厚度为38μm的基底膜(防粘聚酯膜,RS-21G,由SKC生产)上,并110℃下干燥3分钟以制备膜厚度为20μm的粘性膜。
实施例2
除了将膜厚度改为10μm外,以与实施例1相同的方法制备膜。
实施例3
除了热塑性丙烯酸树脂具有15℃的玻璃化转变温度且其含量变为400重量份外,以与实施例1相同的方法制备膜。
实施例4
除了将热塑性丙烯酸树脂的量变为150重量份并将作为填料的二氧化硅的量变为20重量份外,以与实施例1相同的方法制备膜。
比较实施例1
除了将热塑性丙烯酸树脂的玻璃化转变温度变为-15℃外,以与实施例1相同的方式制备膜。
比较实施例2
除了不加入填料外,以与实施例1相同的方式制备膜。
比较实施例3
除了将热塑性丙烯酸树脂的量变为50重量份外,以与实施例1相同的方式制备膜。
[评价方法]
1.常温下的拉伸评价
沿涂覆方向以10mm×50mm(宽度×长度)切割芯片结合膜。以25mm为切下样品的中心,并将两端都用带子捆起来。将用带子捆起来的两端固定在评价拉伸的设备上,并以0.3mm/sec的速率进行拉伸。由得到的拉伸曲线评价弹性区域的斜率和屈服强度(为弹性区域和塑性区域之间的转折点的应力)。此处,所用的评价拉伸的设备为Stable Micro System Company(英国)的质构分析器(Texture Analyzer)。
2.毛刺评价
将切割膜(基底膜100μm,压敏粘合剂部10μm)与芯片结合膜层合并切割以制备切割芯片结合膜。将制得的样品粘附到厚度为75μm的晶片上,然后如下所述进行切割。在切割中,芯片尺寸为5×5mm,切割深度达到晶片、切割膜的芯片结合膜和压敏粘合剂层的全部厚度以及基底膜上的20μm。切割后,在100个芯片中,计算其上出现毛刺的芯片的毛刺发生率。在切割中,刀片的前进速度为40mm/sec,且刀片的旋转速度为40,000rpm。
对于从上述实施例和比较实施例中得到的每种膜,将其屈服强度、拉伸弹性区域的斜率和切割后的毛刺发生率显示在下面的表1中。
【表1】
Claims (16)
1.一种粘性膜,其包括基底膜和粘合剂层,
其中,所述粘合剂层在5至50μm的厚度下具有20至50gf的屈服强度和30至80gf/mm的拉伸弹性区域斜率。
2.根据权利要求1所述的粘性膜,
其中,所述粘合剂层包含热塑性树脂和热固性树脂。
3.根据权利要求2所述的粘性膜,
其中,所述热固性树脂包含硬化剂。
4.根据权利要求2所述的粘性膜,
其中,所述热塑性树脂和包含硬化剂的所述热固性树脂的混合比例(热塑性树脂/热固性树脂)为1至5。
5.根据权利要求2所述的粘性膜,
其中,所述热塑性树脂为包含可与所述热固性树脂交联的官能团的丙烯酸共聚物。
6.根据权利要求5所述的粘性膜,
其中,所述丙烯酸共聚物包含选自(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸2-羟丁酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸2-羟基乙二醇酯或(甲基)丙烯酸2-羟基丙二醇酯、丙烯酸、甲基丙烯酸、丙烯酸二聚体、衣康酸、马来酸、(甲基)丙烯腈和(甲基)丙烯酸缩水甘油酯中的一种或多种单体。
7.根据权利要求5所述的粘性膜,
其中,所述丙烯酸共聚物的玻璃化转变温度为-10至30℃。
8.根据权利要求5所述的粘性膜,
其中,所述丙烯酸共聚物的分子量为100,000至2,500,000。
9.根据权利要求2所述的粘性膜,
其中,所述热固性树脂为环氧树脂。
10.根据权利要求9所述的粘性膜,
其中,所述环氧树脂为选自甲酚酚醛环氧树脂、双酚A型酚醛环氧树脂、苯酚酚醛环氧树脂、四官能环氧树脂、联苯型环氧树脂、三酚甲烷型环氧树脂、烷基改性的三酚甲烷环氧树脂、萘型环氧树脂、二环戊二烯型环氧树脂和二环戊二烯改性的酚型环氧树脂中的一种或多种。
11.根据权利要求1所述的粘性膜,
其中,相对于100重量份的全部组合物,所述粘合剂层进一步包含5至20重量份的填料。
12.根据权利要求11所述的粘性膜,
其中,所述填料为选自二氧化硅、氧化铝、氢氧化铝、氢氧化钙和基于碳的颗粒中的一种或多种。
13.根据权利要求11所述的粘性膜,
其中,所述填料的平均粒径为1至100nm。
14.一种切割芯片结合膜,其包括:
切割膜;和
形成于所述切割膜一个面上的根据权利要求1至13中任一项所述的粘性膜。
15.一种半导体晶片,其中,将根据权利要求14所述的切割芯片结合膜的粘性膜粘附到所述晶片的一个面上并将所述切割膜固定到晶片贴片环上。
16.一种半导体器件,其包括:
布线基板;
粘附到所述布线基板的芯片承载面上的根据权利要求1至13中任一项所述的粘性膜;和
负载于所述粘性膜上的半导体芯片。
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CN109309039A (zh) * | 2017-07-28 | 2019-02-05 | 日东电工株式会社 | 芯片接合薄膜、切割芯片接合薄膜以及半导体装置制造方法 |
CN109309039B (zh) * | 2017-07-28 | 2023-09-08 | 日东电工株式会社 | 芯片接合薄膜、切割芯片接合薄膜以及半导体装置制造方法 |
CN112775539A (zh) * | 2019-11-07 | 2021-05-11 | 大族激光科技产业集团股份有限公司 | 激光加工方法及装置 |
CN114730037A (zh) * | 2019-11-20 | 2022-07-08 | 住友化学株式会社 | 光学层叠体和显示装置 |
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WO2009075472A1 (en) | 2009-06-18 |
EP2193176A1 (en) | 2010-06-09 |
TWI532812B (zh) | 2016-05-11 |
KR100922226B1 (ko) | 2009-10-20 |
KR20090060804A (ko) | 2009-06-15 |
JP2011506669A (ja) | 2011-03-03 |
TW200934850A (en) | 2009-08-16 |
US20100289158A1 (en) | 2010-11-18 |
EP2193176A4 (en) | 2014-11-19 |
US8207616B2 (en) | 2012-06-26 |
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