CN101740096B - 半导体存储器件及半导体存储器件操作方法 - Google Patents
半导体存储器件及半导体存储器件操作方法 Download PDFInfo
- Publication number
- CN101740096B CN101740096B CN2009102118238A CN200910211823A CN101740096B CN 101740096 B CN101740096 B CN 101740096B CN 2009102118238 A CN2009102118238 A CN 2009102118238A CN 200910211823 A CN200910211823 A CN 200910211823A CN 101740096 B CN101740096 B CN 101740096B
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- Prior art keywords
- circuit
- sense amplifier
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- storage unit
- semiconductor storage
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims description 13
- 239000011159 matrix material Substances 0.000 claims description 6
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 claims description 4
- 230000015654 memory Effects 0.000 abstract description 14
- 230000001066 destructive effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 21
- 238000007600 charging Methods 0.000 description 14
- 230000003321 amplification Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
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- 238000012986 modification Methods 0.000 description 2
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-284659 | 2008-11-05 | ||
JP2008284659A JP5410073B2 (ja) | 2008-11-05 | 2008-11-05 | 半導体記憶装置及び半導体記憶装置の動作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101740096A CN101740096A (zh) | 2010-06-16 |
CN101740096B true CN101740096B (zh) | 2013-12-18 |
Family
ID=42131222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102118238A Expired - Fee Related CN101740096B (zh) | 2008-11-05 | 2009-11-05 | 半导体存储器件及半导体存储器件操作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8050108B2 (zh) |
JP (1) | JP5410073B2 (zh) |
CN (1) | CN101740096B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5289855B2 (ja) * | 2008-08-07 | 2013-09-11 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP5215769B2 (ja) * | 2008-08-07 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
US10923204B2 (en) * | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
US9087579B1 (en) * | 2014-01-06 | 2015-07-21 | Qualcomm Incorporated | Sense amplifiers employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems |
KR102292233B1 (ko) | 2015-02-13 | 2021-08-24 | 삼성전자주식회사 | 메모리 장치, 이를 포함하는 메모리 모듈, 및 메모리 시스템 |
US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
CN108282153B (zh) * | 2017-12-15 | 2021-09-24 | 普冉半导体(上海)股份有限公司 | 一种低电压双边放大的灵敏放大器电路 |
WO2022016476A1 (zh) * | 2020-07-23 | 2022-01-27 | 华为技术有限公司 | 一种位线读取电路及存储器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2835079B2 (ja) * | 1989-06-15 | 1998-12-14 | 沖電気工業株式会社 | 半導体記憶装置の制御方法 |
TW200416734A (en) * | 2003-02-19 | 2004-09-01 | Renesas Tech Corp | Semiconductor memory device |
CN101136244A (zh) * | 2006-08-30 | 2008-03-05 | 富士通株式会社 | 半导体存储器和系统 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0373490A (ja) * | 1989-08-14 | 1991-03-28 | Nec Corp | 1トランジスタ型ダイナミックram |
JPH04114395A (ja) * | 1990-09-05 | 1992-04-15 | Nec Corp | 半導体記憶回路 |
JPH05109272A (ja) * | 1991-10-18 | 1993-04-30 | Sanyo Electric Co Ltd | 半導体記憶装置 |
JPH1145594A (ja) * | 1997-07-30 | 1999-02-16 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JP2001118395A (ja) * | 1999-10-18 | 2001-04-27 | Nec Corp | 半導体記憶装置及びデータの読み出し方法 |
JP3751594B2 (ja) | 2002-01-11 | 2006-03-01 | 株式会社東芝 | 半導体記憶装置 |
US6813207B2 (en) | 2002-01-11 | 2004-11-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JP3553554B2 (ja) * | 2002-03-05 | 2004-08-11 | ローム株式会社 | スイッチマトリックス回路、論理演算回路およびスイッチ回路 |
JP2007157283A (ja) | 2005-12-07 | 2007-06-21 | Sharp Corp | 半導体記憶装置 |
JP2008108319A (ja) * | 2006-10-24 | 2008-05-08 | Nec Electronics Corp | 半導体記憶装置 |
JP2008108404A (ja) * | 2006-10-27 | 2008-05-08 | Toshiba Microelectronics Corp | 半導体集積回路装置 |
JP2008159181A (ja) * | 2006-12-25 | 2008-07-10 | Elpida Memory Inc | 半導体記憶装置とセンスアンプ駆動方法 |
JP5215769B2 (ja) * | 2008-08-07 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
-
2008
- 2008-11-05 JP JP2008284659A patent/JP5410073B2/ja not_active Expired - Fee Related
-
2009
- 2009-11-03 US US12/611,589 patent/US8050108B2/en active Active
- 2009-11-05 CN CN2009102118238A patent/CN101740096B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2835079B2 (ja) * | 1989-06-15 | 1998-12-14 | 沖電気工業株式会社 | 半導体記憶装置の制御方法 |
TW200416734A (en) * | 2003-02-19 | 2004-09-01 | Renesas Tech Corp | Semiconductor memory device |
CN101136244A (zh) * | 2006-08-30 | 2008-03-05 | 富士通株式会社 | 半导体存储器和系统 |
Non-Patent Citations (1)
Title |
---|
JP特开2008-159181A 2008.07.10 |
Also Published As
Publication number | Publication date |
---|---|
CN101740096A (zh) | 2010-06-16 |
US8050108B2 (en) | 2011-11-01 |
JP5410073B2 (ja) | 2014-02-05 |
JP2010113753A (ja) | 2010-05-20 |
US20100110814A1 (en) | 2010-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: NEC CORP. Effective date: 20101110 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20101110 Address after: Kanagawa, Japan Applicant after: Renesas Electronics Corporation Address before: Kanagawa, Japan Applicant before: NEC Corp. |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
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CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131218 Termination date: 20191105 |