CN101681844B - 在非平面表面上沉积材料的方法 - Google Patents

在非平面表面上沉积材料的方法 Download PDF

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Publication number
CN101681844B
CN101681844B CN2008800186554A CN200880018655A CN101681844B CN 101681844 B CN101681844 B CN 101681844B CN 2008800186554 A CN2008800186554 A CN 2008800186554A CN 200880018655 A CN200880018655 A CN 200880018655A CN 101681844 B CN101681844 B CN 101681844B
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CN
China
Prior art keywords
deposition
planar substrate
substrate
planar
semiconductor processing
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Expired - Fee Related
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CN2008800186554A
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English (en)
Chinese (zh)
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CN101681844A (zh
Inventor
拉特逊·莫拉德
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Solyndra Inc
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Solyndra Inc
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/13—Single electrolytic cells with circulation of an electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)
CN2008800186554A 2007-04-05 2008-03-24 在非平面表面上沉积材料的方法 Expired - Fee Related CN101681844B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US92229007P 2007-04-05 2007-04-05
US60/922,290 2007-04-05
US11/801,469 2007-05-09
US11/801,469 US7563725B2 (en) 2007-04-05 2007-05-09 Method of depositing materials on a non-planar surface
PCT/US2008/003886 WO2008123930A1 (en) 2007-04-05 2008-03-24 Method of depositing materials on a non-planar surface

Publications (2)

Publication Number Publication Date
CN101681844A CN101681844A (zh) 2010-03-24
CN101681844B true CN101681844B (zh) 2013-03-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800186554A Expired - Fee Related CN101681844B (zh) 2007-04-05 2008-03-24 在非平面表面上沉积材料的方法

Country Status (8)

Country Link
US (2) US7563725B2 (enExample)
EP (1) EP2137761A4 (enExample)
JP (1) JP5415401B2 (enExample)
KR (1) KR20100016224A (enExample)
CN (1) CN101681844B (enExample)
MY (1) MY149238A (enExample)
SG (1) SG163597A1 (enExample)
WO (1) WO2008123930A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090011573A1 (en) * 2007-07-02 2009-01-08 Solyndra, Inc. Carrier used for deposition of materials on a non-planar surface
US20090084219A1 (en) * 2007-09-10 2009-04-02 Ross-Hime Designs, Inc. Robotic manipulator
WO2011028290A1 (en) * 2009-09-06 2011-03-10 Hanzhong Zhang Tubular photovoltaic device and method of making
US8087380B2 (en) * 2009-10-30 2012-01-03 Intevac, Inc. Evaporative system for solar cell fabrication
TW201200628A (en) * 2010-06-29 2012-01-01 Hon Hai Prec Ind Co Ltd Coating apparatus
US9178093B2 (en) 2011-07-06 2015-11-03 Flextronics Ap, Llc Solar cell module on molded lead-frame and method of manufacture
CN103866249A (zh) * 2012-12-13 2014-06-18 中国科学院大连化学物理研究所 一种磁控溅射装置及其应用
CN104213094A (zh) * 2013-06-04 2014-12-17 金弼 一种真空镀膜装置
US9300169B1 (en) 2013-06-26 2016-03-29 Cameron M. D. Bardy Automotive roof rack with integral solar cell array
BE1022358B1 (nl) * 2014-07-09 2016-03-24 Soleras Advanced Coatings Bvba Sputterinrichting met bewegend doelwit
JP6451030B2 (ja) * 2015-01-26 2019-01-16 株式会社昭和真空 成膜装置
US9963778B2 (en) 2015-05-07 2018-05-08 International Business Machines Corporation Functionally graded material by in-situ gradient alloy sputter deposition management
KR102651054B1 (ko) * 2016-02-22 2024-03-26 삼성디스플레이 주식회사 전사 장치, 이를 이용한 전사 방법 및 표시 장치
CN108385068B (zh) * 2018-02-05 2019-12-31 信利光电股份有限公司 一种曲面盖板的镀膜装置、镀膜方法和可读存储介质
CN110007539B (zh) * 2019-05-22 2021-09-21 江苏铁锚玻璃股份有限公司 高效均匀变色的曲面电致变色透明器件及其制备方法
BE1027427B1 (nl) 2019-07-14 2021-02-08 Soleras Advanced Coatings Bv Bewegingssystemen voor sputter coaten van niet-vlakke substraten

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1144398A (zh) * 1995-05-31 1997-03-05 日本电气株式会社 旋转型半导体晶片处理装置和半导体晶片处理方法
US6499426B1 (en) * 1999-12-10 2002-12-31 Saint-Gobain Industrial Ceramics, Inc. System and method for coating non-planar surfaces of objects with diamond film
US6662673B1 (en) * 1999-04-08 2003-12-16 Applied Materials, Inc. Linear motion apparatus and associated method

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022840A (enExample) 1973-06-28 1975-03-11
US3990914A (en) * 1974-09-03 1976-11-09 Sensor Technology, Inc. Tubular solar cell
US4114330A (en) 1976-11-04 1978-09-19 Kawneer Company, Inc. Skylight system
FR2401290A1 (fr) * 1977-08-25 1979-03-23 Saint Gobain Dispositif de montage de capteurs solaires sur les batiments
US4225638A (en) 1979-04-16 1980-09-30 The D. L. Auld Company Method and apparatus for flow coating with suck-back control
US4451507A (en) * 1982-10-29 1984-05-29 Rca Corporation Automatic liquid dispensing apparatus for spinning surface of uniform thickness
DE3306870A1 (de) * 1983-02-26 1984-08-30 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum herstellen von schichten mit rotationssymmetrischem dickenprofil durch katodenzerstaeubung
JPH06102829B2 (ja) * 1984-03-28 1994-12-14 日電アネルバ株式会社 放電反応処理装置
US4620985A (en) * 1985-03-22 1986-11-04 The D. L. Auld Company Circumferential groove coating method for protecting a glass bottle
JPH0791642B2 (ja) * 1986-10-15 1995-10-04 石川島播磨重工業株式会社 表面処理装置
US4851095A (en) 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
US5055036A (en) * 1991-02-26 1991-10-08 Tokyo Electron Sagami Limited Method of loading and unloading wafer boat
US5215420A (en) 1991-09-20 1993-06-01 Intevac, Inc. Substrate handling and processing system
JP3322912B2 (ja) * 1992-08-17 2002-09-09 東京エレクトロン株式会社 ウエハボート回転装置及びこれを用いた熱処理装置
US5705321A (en) * 1993-09-30 1998-01-06 The University Of New Mexico Method for manufacture of quantum sized periodic structures in Si materials
US5373839A (en) * 1994-01-05 1994-12-20 Hoang; Shao-Kuang Solar collector assembly for a solar heating system
US5588996A (en) * 1994-04-01 1996-12-31 Argus International Apparatus for spray coating flat surfaces
US5626207A (en) * 1995-10-23 1997-05-06 Micron Technology, Inc. Manual wafer lift
US6018383A (en) * 1997-08-20 2000-01-25 Anvik Corporation Very large area patterning system for flexible substrates
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6079693A (en) * 1998-05-20 2000-06-27 Applied Komatsu Technology, Inc. Isolation valves
US6530340B2 (en) * 1998-11-12 2003-03-11 Advanced Micro Devices, Inc. Apparatus for manufacturing planar spin-on films
US6460369B2 (en) * 1999-11-03 2002-10-08 Applied Materials, Inc. Consecutive deposition system
US20020083739A1 (en) * 2000-12-29 2002-07-04 Pandelisev Kiril A. Hot substrate deposition fiber optic preforms and preform components process and apparatus
US6732551B2 (en) * 2001-05-04 2004-05-11 Corning Incorporated Method and feedstock for making silica
US7415844B2 (en) * 2001-06-25 2008-08-26 Prysmian Cavi E Sistemi Energia S.R.L. Device for manufacturing a preform for optical fibres through chemical deposition
US7189293B2 (en) * 2001-06-28 2007-03-13 Shin-Etsu Handotai Co., Ltd. Method of producing annealed wafer and annealed wafer
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
US20030154923A1 (en) 2002-02-19 2003-08-21 Innovative Technology Licensing, Llc Mechanical translator with ultra low friction ferrofluid bearings
US7600349B2 (en) 2003-02-26 2009-10-13 Unirac, Inc. Low profile mounting system
US7441379B2 (en) 2003-06-27 2008-10-28 Konvin Associates Limited Partnership Light transmission panels, retaining clip and a combination thereof
US7313893B2 (en) 2003-11-13 2008-01-01 Extech/Exterior Technologies, Inc. Panel clip assembly for use with roof or wall panels
US20060201074A1 (en) * 2004-06-02 2006-09-14 Shinichi Kurita Electronic device manufacturing chamber and methods of forming the same
GB2417251A (en) * 2004-08-18 2006-02-22 Nanofilm Technologies Int Removing material from a substrate surface using plasma
US7661234B2 (en) 2005-08-10 2010-02-16 Extech/Exterior Technologies, Inc. Reduced friction fastening clip assembly for use with standing seam roof or wall panel systems
JP2007077478A (ja) * 2005-09-16 2007-03-29 Sony Corp 成膜方法及び成膜装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1144398A (zh) * 1995-05-31 1997-03-05 日本电气株式会社 旋转型半导体晶片处理装置和半导体晶片处理方法
US6662673B1 (en) * 1999-04-08 2003-12-16 Applied Materials, Inc. Linear motion apparatus and associated method
US6499426B1 (en) * 1999-12-10 2002-12-31 Saint-Gobain Industrial Ceramics, Inc. System and method for coating non-planar surfaces of objects with diamond film

Also Published As

Publication number Publication date
JP5415401B2 (ja) 2014-02-12
US8580037B2 (en) 2013-11-12
JP2010523818A (ja) 2010-07-15
CN101681844A (zh) 2010-03-24
EP2137761A4 (en) 2011-12-07
US20080248647A1 (en) 2008-10-09
EP2137761A1 (en) 2009-12-30
US7563725B2 (en) 2009-07-21
US20090255471A1 (en) 2009-10-15
KR20100016224A (ko) 2010-02-12
WO2008123930A1 (en) 2008-10-16
SG163597A1 (en) 2010-08-30
MY149238A (en) 2013-07-31

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