CN101681844B - 在非平面表面上沉积材料的方法 - Google Patents

在非平面表面上沉积材料的方法 Download PDF

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Publication number
CN101681844B
CN101681844B CN2008800186554A CN200880018655A CN101681844B CN 101681844 B CN101681844 B CN 101681844B CN 2008800186554 A CN2008800186554 A CN 2008800186554A CN 200880018655 A CN200880018655 A CN 200880018655A CN 101681844 B CN101681844 B CN 101681844B
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China
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planar substrates
translation
deposition
semiconductor
path
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Expired - Fee Related
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CN2008800186554A
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English (en)
Chinese (zh)
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CN101681844A (zh
Inventor
拉特逊·莫拉德
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Solyndra Inc
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Solyndra Inc
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/13—Single electrolytic cells with circulation of an electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H10D64/011—
    • H10P14/22—
    • H10P14/3436—
    • H10P72/3311—
    • H10P72/3314—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)
CN2008800186554A 2007-04-05 2008-03-24 在非平面表面上沉积材料的方法 Expired - Fee Related CN101681844B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US92229007P 2007-04-05 2007-04-05
US60/922,290 2007-04-05
US11/801,469 2007-05-09
US11/801,469 US7563725B2 (en) 2007-04-05 2007-05-09 Method of depositing materials on a non-planar surface
PCT/US2008/003886 WO2008123930A1 (en) 2007-04-05 2008-03-24 Method of depositing materials on a non-planar surface

Publications (2)

Publication Number Publication Date
CN101681844A CN101681844A (zh) 2010-03-24
CN101681844B true CN101681844B (zh) 2013-03-27

Family

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Family Applications (1)

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CN2008800186554A Expired - Fee Related CN101681844B (zh) 2007-04-05 2008-03-24 在非平面表面上沉积材料的方法

Country Status (8)

Country Link
US (2) US7563725B2 (enExample)
EP (1) EP2137761A4 (enExample)
JP (1) JP5415401B2 (enExample)
KR (1) KR20100016224A (enExample)
CN (1) CN101681844B (enExample)
MY (1) MY149238A (enExample)
SG (1) SG163597A1 (enExample)
WO (1) WO2008123930A1 (enExample)

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US20090011573A1 (en) * 2007-07-02 2009-01-08 Solyndra, Inc. Carrier used for deposition of materials on a non-planar surface
US20090084219A1 (en) * 2007-09-10 2009-04-02 Ross-Hime Designs, Inc. Robotic manipulator
CN102598286A (zh) * 2009-09-06 2012-07-18 张晗钟 管状光伏器件和制造方法
US8087380B2 (en) * 2009-10-30 2012-01-03 Intevac, Inc. Evaporative system for solar cell fabrication
TW201200628A (en) * 2010-06-29 2012-01-01 Hon Hai Prec Ind Co Ltd Coating apparatus
US9178093B2 (en) 2011-07-06 2015-11-03 Flextronics Ap, Llc Solar cell module on molded lead-frame and method of manufacture
CN103866249A (zh) * 2012-12-13 2014-06-18 中国科学院大连化学物理研究所 一种磁控溅射装置及其应用
CN104213094A (zh) * 2013-06-04 2014-12-17 金弼 一种真空镀膜装置
US9300169B1 (en) 2013-06-26 2016-03-29 Cameron M. D. Bardy Automotive roof rack with integral solar cell array
KR102124786B1 (ko) * 2014-07-09 2020-06-22 솔레라스 어드밴스드 코팅스 비브이비에이 이동 표적을 가지는 스퍼터 장치
JP6451030B2 (ja) * 2015-01-26 2019-01-16 株式会社昭和真空 成膜装置
US9963778B2 (en) 2015-05-07 2018-05-08 International Business Machines Corporation Functionally graded material by in-situ gradient alloy sputter deposition management
KR102651054B1 (ko) * 2016-02-22 2024-03-26 삼성디스플레이 주식회사 전사 장치, 이를 이용한 전사 방법 및 표시 장치
CN108385068B (zh) * 2018-02-05 2019-12-31 信利光电股份有限公司 一种曲面盖板的镀膜装置、镀膜方法和可读存储介质
CN110007539B (zh) * 2019-05-22 2021-09-21 江苏铁锚玻璃股份有限公司 高效均匀变色的曲面电致变色透明器件及其制备方法
BE1027427B1 (nl) * 2019-07-14 2021-02-08 Soleras Advanced Coatings Bv Bewegingssystemen voor sputter coaten van niet-vlakke substraten

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Also Published As

Publication number Publication date
US8580037B2 (en) 2013-11-12
SG163597A1 (en) 2010-08-30
EP2137761A1 (en) 2009-12-30
JP2010523818A (ja) 2010-07-15
JP5415401B2 (ja) 2014-02-12
US7563725B2 (en) 2009-07-21
MY149238A (en) 2013-07-31
WO2008123930A1 (en) 2008-10-16
US20080248647A1 (en) 2008-10-09
US20090255471A1 (en) 2009-10-15
EP2137761A4 (en) 2011-12-07
KR20100016224A (ko) 2010-02-12
CN101681844A (zh) 2010-03-24

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