CN101679800B - 包含稠合芳族环的抗反射涂料组合物 - Google Patents

包含稠合芳族环的抗反射涂料组合物 Download PDF

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Publication number
CN101679800B
CN101679800B CN2008800168448A CN200880016844A CN101679800B CN 101679800 B CN101679800 B CN 101679800B CN 2008800168448 A CN2008800168448 A CN 2008800168448A CN 200880016844 A CN200880016844 A CN 200880016844A CN 101679800 B CN101679800 B CN 101679800B
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polymer
composition
alkyl
antireflective coating
fused aromatic
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English (en)
Chinese (zh)
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CN101679800A (zh
Inventor
F·霍利亨
D·阿布达拉
M·D·拉曼
D·麦肯齐
张汝志
A·G·蒂姆科
金羽圭
卢炳宏
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Merck Patent GmbH
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AZ Electronic Materials USA Corp
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Priority claimed from US11/752,040 external-priority patent/US20080292987A1/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
CN2008800168448A 2007-05-22 2008-05-20 包含稠合芳族环的抗反射涂料组合物 Active CN101679800B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/752,040 US20080292987A1 (en) 2007-05-22 2007-05-22 Antireflective Coating Composition Comprising Fused Aromatic Rings
US11/752,040 2007-05-22
US11/872,962 US8017296B2 (en) 2007-05-22 2007-10-16 Antireflective coating composition comprising fused aromatic rings
US11/872,962 2007-10-16
PCT/IB2008/001284 WO2008142546A2 (en) 2007-05-22 2008-05-20 An antireflective coating composition comprising fused aromatic rings

Publications (2)

Publication Number Publication Date
CN101679800A CN101679800A (zh) 2010-03-24
CN101679800B true CN101679800B (zh) 2013-06-26

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CN2008800168448A Active CN101679800B (zh) 2007-05-22 2008-05-20 包含稠合芳族环的抗反射涂料组合物

Country Status (7)

Country Link
US (1) US8017296B2 (https=)
EP (1) EP2158279B1 (https=)
JP (1) JP5327217B2 (https=)
KR (1) KR101532102B1 (https=)
CN (1) CN101679800B (https=)
TW (1) TWI424033B (https=)
WO (1) WO2008142546A2 (https=)

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US8017296B2 (en) 2011-09-13
WO2008142546A2 (en) 2008-11-27
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TWI424033B (zh) 2014-01-21
EP2158279A2 (en) 2010-03-03
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JP2010528334A (ja) 2010-08-19
WO2008142546A3 (en) 2009-02-05
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US20080292995A1 (en) 2008-11-27
KR20100023868A (ko) 2010-03-04

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