CN101641796B - 厚膜导电组合物、由其形成的制品和半导体器件制造方法 - Google Patents

厚膜导电组合物、由其形成的制品和半导体器件制造方法 Download PDF

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Publication number
CN101641796B
CN101641796B CN2008800093140A CN200880009314A CN101641796B CN 101641796 B CN101641796 B CN 101641796B CN 2008800093140 A CN2008800093140 A CN 2008800093140A CN 200880009314 A CN200880009314 A CN 200880009314A CN 101641796 B CN101641796 B CN 101641796B
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China
Prior art keywords
thick film
conductive composition
composition
film conductive
glass frit
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Expired - Fee Related
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CN2008800093140A
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English (en)
Chinese (zh)
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CN101641796A (zh
Inventor
今野卓哉
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Glass Compositions (AREA)
CN2008800093140A 2007-04-12 2008-04-09 厚膜导电组合物、由其形成的制品和半导体器件制造方法 Expired - Fee Related CN101641796B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/786,717 US7731868B2 (en) 2007-04-12 2007-04-12 Thick film conductive composition and process for use in the manufacture of semiconductor device
US11/786,717 2007-04-12
PCT/US2008/004657 WO2008127624A1 (en) 2007-04-12 2008-04-09 Thick film conductive composition and processes for use in the manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
CN101641796A CN101641796A (zh) 2010-02-03
CN101641796B true CN101641796B (zh) 2011-03-16

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CN2008800093140A Expired - Fee Related CN101641796B (zh) 2007-04-12 2008-04-09 厚膜导电组合物、由其形成的制品和半导体器件制造方法

Country Status (8)

Country Link
US (1) US7731868B2 (enExample)
EP (1) EP2135294B1 (enExample)
JP (1) JP2010524257A (enExample)
KR (1) KR101086183B1 (enExample)
CN (1) CN101641796B (enExample)
AT (1) ATE481737T1 (enExample)
DE (1) DE602008002574D1 (enExample)
WO (1) WO2008127624A1 (enExample)

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DE102008037613A1 (de) * 2008-11-28 2010-06-02 Schott Solar Ag Verfahren zur Herstellung eines Metallkontakts
TW201025622A (en) * 2008-12-17 2010-07-01 Ind Tech Res Inst Electrode for solar cell and fabricating method thereof
JP5293348B2 (ja) * 2009-03-31 2013-09-18 三菱マテリアル株式会社 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
WO2010124161A1 (en) * 2009-04-23 2010-10-28 E. I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces
TW201043359A (en) * 2009-05-01 2010-12-16 Du Pont Silver particles and a process for making them
TW201100185A (en) * 2009-05-01 2011-01-01 Du Pont Silver particles and a process for making them
EP2432839A1 (en) * 2009-05-20 2012-03-28 E. I. Du Pont De Nemours And Company Phase change ink composition
KR101144810B1 (ko) * 2009-07-06 2012-05-11 엘지전자 주식회사 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법
WO2011016594A1 (ko) * 2009-08-07 2011-02-10 주식회사 엘지화학 실리콘 태양전지 제조용 납 프리 유리 프릿 분말 및 그 제조방법과 이를 포함하는 금속 페이스트 조성물 및 실리콘 태양전지
US20110048527A1 (en) * 2009-08-25 2011-03-03 E.I. Du Pont De Nemours And Company Silver thick film paste compositions and their use in conductors for photovoltaic cells
JP2011144726A (ja) 2010-01-13 2011-07-28 Suzuki Motor Corp 内燃機関の制御装置
JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5540811B2 (ja) * 2010-03-24 2014-07-02 三菱マテリアル株式会社 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
JP5540810B2 (ja) * 2010-03-24 2014-07-02 三菱マテリアル株式会社 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
TWI498308B (zh) * 2010-05-04 2015-09-01 杜邦股份有限公司 含有鉛-碲-鋰-鈦-氧化物之厚膜膏及其在半導體裝置之製造中的用途
US8366799B2 (en) 2010-08-30 2013-02-05 E I Du Pont De Nemours And Company Silver particles and a process for making them
KR101199194B1 (ko) 2010-10-28 2012-11-07 엘지이노텍 주식회사 태양 전지의 전면 전극용 페이스트 조성물 및 태양 전지
KR101428131B1 (ko) * 2010-10-28 2014-08-07 엘지이노텍 주식회사 전도성 페이스트 조성물
US8574338B2 (en) 2010-11-17 2013-11-05 E I Du Pont De Nemours And Company Reactor and continuous process for producing silver powders
US9039942B2 (en) 2011-12-21 2015-05-26 E I Du Pont De Nemours And Company Lead-free conductive paste composition and semiconductor devices made therewith
EP2607327A1 (en) * 2011-12-23 2013-06-26 Heraeus Precious Metals GmbH & Co. KG Thick-film composition containing antimony oxides and their use in the manufacture of semi-conductor devices
US9240515B2 (en) 2013-11-25 2016-01-19 E I Du Pont De Nemours And Company Method of manufacturing a solar cell
CN105321594B (zh) * 2015-02-26 2017-04-26 深圳市春仰科技有限公司 一种硅太阳能电池正面银浆及其制备方法
US10056508B2 (en) 2015-03-27 2018-08-21 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising a metal compound
CN107408418A (zh) 2015-03-27 2017-11-28 贺利氏德国有限责任两合公司 包含氧化物添加剂的导电浆料
JP6624930B2 (ja) 2015-12-26 2019-12-25 日亜化学工業株式会社 発光素子及びその製造方法
JP6683003B2 (ja) 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
JP6720747B2 (ja) 2016-07-19 2020-07-08 日亜化学工業株式会社 半導体装置、基台及びそれらの製造方法
CN107068238A (zh) * 2016-12-09 2017-08-18 东莞珂洛赫慕电子材料科技有限公司 一种铝合金基板用厚膜电路中温烧结全银电极浆料及其制备方法
CN107274959A (zh) * 2017-05-03 2017-10-20 陶志斌 无机导电端头膜及其制备方法

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Also Published As

Publication number Publication date
ATE481737T1 (de) 2010-10-15
DE602008002574D1 (de) 2010-10-28
EP2135294B1 (en) 2010-09-15
CN101641796A (zh) 2010-02-03
KR101086183B1 (ko) 2011-11-25
JP2010524257A (ja) 2010-07-15
WO2008127624A1 (en) 2008-10-23
US20080254567A1 (en) 2008-10-16
EP2135294A1 (en) 2009-12-23
KR20100005121A (ko) 2010-01-13
US7731868B2 (en) 2010-06-08

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