CN101606101B - 精细图案转印材料 - Google Patents
精细图案转印材料 Download PDFInfo
- Publication number
- CN101606101B CN101606101B CN2008800043921A CN200880004392A CN101606101B CN 101606101 B CN101606101 B CN 101606101B CN 2008800043921 A CN2008800043921 A CN 2008800043921A CN 200880004392 A CN200880004392 A CN 200880004392A CN 101606101 B CN101606101 B CN 101606101B
- Authority
- CN
- China
- Prior art keywords
- fine pattern
- transfer material
- butoxy
- pattern transfer
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000463 material Substances 0.000 title claims abstract description 64
- 238000012546 transfer Methods 0.000 title claims abstract description 58
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 9
- -1 normal-butyl Chemical group 0.000 claims description 14
- 229920000734 polysilsesquioxane polymer Polymers 0.000 claims description 11
- DJCDXWHFUVBGLR-UHFFFAOYSA-N CCO[Ta] Chemical compound CCO[Ta] DJCDXWHFUVBGLR-UHFFFAOYSA-N 0.000 claims description 9
- OOZMWSYTZYGHDN-UHFFFAOYSA-N CCO[W] Chemical compound CCO[W] OOZMWSYTZYGHDN-UHFFFAOYSA-N 0.000 claims description 9
- 229910000765 intermetallic Inorganic materials 0.000 claims description 9
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 7
- WGWPCFWJFBMYQZ-UHFFFAOYSA-N CCCCO[Ta] Chemical compound CCCCO[Ta] WGWPCFWJFBMYQZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- HLDKZVSEWYYPIR-UHFFFAOYSA-N C(C)(C)O[W] Chemical compound C(C)(C)O[W] HLDKZVSEWYYPIR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004793 Polystyrene Substances 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229920002223 polystyrene Polymers 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 7
- 230000000737 periodic effect Effects 0.000 abstract description 4
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 239000011342 resin composition Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 19
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 16
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 125000002510 isobutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])O* 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 4
- 238000010023 transfer printing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- IEWPXBHXCYFYKS-UHFFFAOYSA-N C(C)(C)(C)O[Ta] Chemical compound C(C)(C)(C)O[Ta] IEWPXBHXCYFYKS-UHFFFAOYSA-N 0.000 description 3
- QMNPAFJTUPPXDX-UHFFFAOYSA-N C(C)(CC)O[Ta] Chemical compound C(C)(CC)O[Ta] QMNPAFJTUPPXDX-UHFFFAOYSA-N 0.000 description 3
- BCNAZFJPFXGWMV-UHFFFAOYSA-N CC(C)(C)O[Hf] Chemical compound CC(C)(C)O[Hf] BCNAZFJPFXGWMV-UHFFFAOYSA-N 0.000 description 3
- MDKXWFMOHAXBTH-UHFFFAOYSA-N CC(C)(C)O[Ti] Chemical compound CC(C)(C)O[Ti] MDKXWFMOHAXBTH-UHFFFAOYSA-N 0.000 description 3
- LEFBQVSCPNZYJN-UHFFFAOYSA-N CCC(C)O[Ti] Chemical compound CCC(C)O[Ti] LEFBQVSCPNZYJN-UHFFFAOYSA-N 0.000 description 3
- CXLATMDDROQJAI-UHFFFAOYSA-N CCCCO[Nb] Chemical compound CCCCO[Nb] CXLATMDDROQJAI-UHFFFAOYSA-N 0.000 description 3
- RASBDVLERRNNLJ-UHFFFAOYSA-N CCCCO[Ti] Chemical compound CCCCO[Ti] RASBDVLERRNNLJ-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 150000008282 halocarbons Chemical class 0.000 description 3
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 3
- PFTBHEHCJKTKDC-UHFFFAOYSA-N (2-methylpropan-2-yl)oxygermanium Chemical compound CC(C)(C)O[Ge] PFTBHEHCJKTKDC-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- HBVTUZQLOOSMJU-UHFFFAOYSA-N C(C(C)C)O[Ge] Chemical compound C(C(C)C)O[Ge] HBVTUZQLOOSMJU-UHFFFAOYSA-N 0.000 description 2
- QOXDQAICVUDSFT-UHFFFAOYSA-N C(C)(CC)O[Nb] Chemical compound C(C)(CC)O[Nb] QOXDQAICVUDSFT-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- VEUIIFANFPOTFW-UHFFFAOYSA-N butan-2-yloxygermanium Chemical compound CCC(C)O[Ge] VEUIIFANFPOTFW-UHFFFAOYSA-N 0.000 description 2
- BCIKWDOSPUNGKB-UHFFFAOYSA-N butoxygermanium Chemical compound CCCCO[Ge] BCIKWDOSPUNGKB-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- QASMZJKUEABJNR-UHFFFAOYSA-N methanolate;tantalum(5+) Chemical compound [Ta+5].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C QASMZJKUEABJNR-UHFFFAOYSA-N 0.000 description 2
- 235000016768 molybdenum Nutrition 0.000 description 2
- 125000006606 n-butoxy group Chemical group 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- GXMNGLIMQIPFEB-UHFFFAOYSA-N tetraethoxygermane Chemical compound CCO[Ge](OCC)(OCC)OCC GXMNGLIMQIPFEB-UHFFFAOYSA-N 0.000 description 2
- ACOVYJCRYLWRLR-UHFFFAOYSA-N tetramethoxygermane Chemical compound CO[Ge](OC)(OC)OC ACOVYJCRYLWRLR-UHFFFAOYSA-N 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- IXWWNXVRBQRDKW-UHFFFAOYSA-N C(C)(C)O[Fe] Chemical compound C(C)(C)O[Fe] IXWWNXVRBQRDKW-UHFFFAOYSA-N 0.000 description 1
- LPKCRPSWCJLTLG-UHFFFAOYSA-N C(C)(CC)O[Zr] Chemical compound C(C)(CC)O[Zr] LPKCRPSWCJLTLG-UHFFFAOYSA-N 0.000 description 1
- UTDKTXORJIVKDX-UHFFFAOYSA-N CC(C)(C)O[Zr] Chemical compound CC(C)(C)O[Zr] UTDKTXORJIVKDX-UHFFFAOYSA-N 0.000 description 1
- CYIGYDSFDOKCQC-UHFFFAOYSA-N CCCCO[Mn] Chemical compound CCCCO[Mn] CYIGYDSFDOKCQC-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 102000004895 Lipoproteins Human genes 0.000 description 1
- 108090001030 Lipoproteins Proteins 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- FUECIDVNGAUMGJ-UHFFFAOYSA-N acetic acid;2-(2-butoxyethoxy)ethanol Chemical class CC(O)=O.CCCCOCCOCCO FUECIDVNGAUMGJ-UHFFFAOYSA-N 0.000 description 1
- GTYLEVMOSBBKCQ-UHFFFAOYSA-N acetic acid;2-(2-ethoxyethoxy)ethanol Chemical class CC(O)=O.CCOCCOCCO GTYLEVMOSBBKCQ-UHFFFAOYSA-N 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- DOBSQSLSWMMIEM-UHFFFAOYSA-N butoxytin Chemical compound CCCCO[Sn] DOBSQSLSWMMIEM-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- VBXHMSMVQZJJLD-UHFFFAOYSA-N cobalt(2+);propan-2-olate Chemical compound [Co+2].CC(C)[O-].CC(C)[O-] VBXHMSMVQZJJLD-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- ZFSQRSOTOXERMJ-UHFFFAOYSA-N ethanol;iron Chemical compound [Fe].CCO.CCO.CCO ZFSQRSOTOXERMJ-UHFFFAOYSA-N 0.000 description 1
- UARGAUQGVANXCB-UHFFFAOYSA-N ethanol;zirconium Chemical compound [Zr].CCO.CCO.CCO.CCO UARGAUQGVANXCB-UHFFFAOYSA-N 0.000 description 1
- BFIMXCBKRLYJQO-UHFFFAOYSA-N ethanolate;hafnium(4+) Chemical compound [Hf+4].CC[O-].CC[O-].CC[O-].CC[O-] BFIMXCBKRLYJQO-UHFFFAOYSA-N 0.000 description 1
- NPAJGHOZGYPSTK-UHFFFAOYSA-N ethanolate;lanthanum(3+) Chemical compound [La+3].CC[O-].CC[O-].CC[O-] NPAJGHOZGYPSTK-UHFFFAOYSA-N 0.000 description 1
- KEQVPIDOPAGWCP-UHFFFAOYSA-N ethanolate;yttrium(3+) Chemical compound [Y+3].CC[O-].CC[O-].CC[O-] KEQVPIDOPAGWCP-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M isovalerate Chemical compound CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- IJCCNPITMWRYRC-UHFFFAOYSA-N methanolate;niobium(5+) Chemical compound [Nb+5].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C IJCCNPITMWRYRC-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- ZGSOBQAJAUGRBK-UHFFFAOYSA-N propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] ZGSOBQAJAUGRBK-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 125000005920 sec-butoxy group Chemical group 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- FPADWGFFPCNGDD-UHFFFAOYSA-N tetraethoxystannane Chemical compound [Sn+4].CC[O-].CC[O-].CC[O-].CC[O-] FPADWGFFPCNGDD-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- WXKZSTUKHWTJCF-UHFFFAOYSA-N zinc;ethanolate Chemical compound [Zn+2].CC[O-].CC[O-] WXKZSTUKHWTJCF-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种可以通过纳米压印有利地形成精细图案的转印材料。该纳米压印转印材料是一种精细图案树脂组合物，其包括有机硅化合物和周期表3-14族金属的金属化合物。
Description
技术领域
本发明涉及一种适用于半导体制造工艺和使用垂直磁记录方法的图案化介质制造工艺的精细图案转印材料。
背景技术
工业上需要发展纳米压印技术，特别是用于纳米压印在半导体制造工艺或使用垂直磁记录方法的图案化介质制造工艺中所需的精细图案的转印材料。
过去，已经公开了将精细图案在室温下纳米压印在基底上的技术，其中在基底上形成聚氢化倍半硅氧烷的涂膜，在150℃或更低的温度下预烘涂覆的表面，然后使用模具挤压薄膜。(参考专利文献1和非专利文献1、2和3)。此外，还已公开了使用笼形聚倍半硅氧烷的类似技术(参考专利文献2)。该技术不仅用于半导体制造工艺，还开始应用于生产磁记录介质如离散轨道介质和图案化介质(参考专利文献3)。然而，迄今使用的聚合物具有低耐热性，以及取决于形成的图案的暴露环境，存在不能保持图案形状的问题。
为了克服这些问题，已经公开了其中使用高耐热性聚酰亚胺树脂形成精细图案的技术(参考专利文献4)。然而，存在可成形性问题，如其中矩形的顶部区域作为凹部转印。
[专利文献1]日本未审专利申请2003-100609
[专利文献2]日本未审专利申请2006-285017
[专利文献3]日本未审专利申请2006-302396
[专利文献4]日本未审专利申请2006-110956
[非专利文献1]Y.Igaku等人，Jpn.J.Appli.Phys.，41，4198(2002)
[非专利文献2]S.Matsui等人，J.Vac.Sci.Technol.B，21，688(2003)
[非专利文献3]S.Z.Chen等人，J.Vac.Sci.Technol.B，24，1934(2006)
发明内容
本发明的一个目的是提供一种可以通过纳米压印有利地形成精细图案的转印材料。
通过对这些问题努力研究，本发明发明人发现了通过将有机硅化合物与金属化合物共混制得的树脂组合物是一种具有增加的耐热性的精细图案转印材料，这可以实现本发明目的。换句话说，本发明涉及下列各项。
[1]一种用于纳米压印的精细图案转印材料，包含有机硅化合物和周期表3-14族金属的金属化合物。
[2]根据[1]的精细图案转印材料，其中所述有机硅化合物是聚倍半硅氧烷化合物。
[3]根据[1]或[2]的精细图案转印材料，其中所述金属化合物由以下式(1)表示：
M(OR)n (1)
其中M表示周期表3-14族的金属元素，R表示苯基或具有1-6个碳原子的烷基，和n表示1-5的整数。
[4]根据[3]的精细图案转印材料，其中式(1)中的M表示Nb、Ti、Ta或Hf，和R是甲基、乙基、丙基、异丙基、正丁基、仲丁基或叔丁基。
[5]根据[1]-[4]任一项的精细图案转印材料，其中所述有机硅化合物是聚苯基倍半硅氧烷、聚苯乙烯基倍半硅氧烷，和所述金属化合物是四乙氧基钛、五乙氧基钽、五(正丁氧基)钽或五乙氧基钨。
本发明的精细图案转印材料具有优异的耐热性，并且可以适合地形成在半导体制造工艺或使用垂直磁记录方法的图案化介质制造工艺中所需的精细图案。
附图简述
图1是显示在实施例1的精细图案转印材料(a)中形成的精细图案的照片。
图2是将在实施例1的精细图案转印材料(a)中形成的精细图案加热后所照的照片。
图3是显示在实施例2的精细图案转印材料(a)中形成的热处理过的精细图案的照片。
图4是将在实施例2的精细图案转印材料(a)中形成的热处理过的精细图案进一步加热后所照的照片。
本发明的最佳实施方式
以下将详细描述本发明的精细图案转印材料。
转印材料
本发明的精细图案转印材料含有有机硅化合物和金属化合物。通过将具有雕刻于其上的精细图案的模具压在已施加到基底上的本发明转印材料上而转印精细图案。
有机硅化合物
有机硅化合物可以是硅树脂或聚倍半硅氧烷化合物，但特别优选使用聚倍半硅氧烷。在此，术语“聚倍半硅氧烷”是指网状聚合物或多面体簇，其在主链中具有硅氧烷键，并且其具有氢原子或有机基团作为侧链，并通过水解三官能硅烷化合物获得。
聚倍半硅氧烷的特定实例包括聚氢化倍半硅氧烷、聚甲基倍半硅氧烷、聚乙基倍半硅氧烷、聚丙基倍半硅氧烷、聚异丙基倍半硅氧烷、聚丁基倍半硅氧烷、聚(仲丁基)倍半硅氧烷、聚(叔丁基)倍半硅氧烷、聚苯基倍半硅氧烷、聚萘基倍半硅氧烷、聚苯乙烯基倍半硅氧烷和聚金刚烷基倍半硅氧烷等。这些当中，优选聚氢化倍半硅氧烷、聚甲基倍半硅氧烷、聚乙基倍半硅氧烷、聚(叔丁基)倍半硅氧烷、聚苯基倍半硅氧烷和聚苯乙烯基倍半硅氧烷，并且特别优选聚苯基倍半硅氧烷和聚苯乙烯基倍半硅氧烷。
聚倍半硅氧烷可以通过通常已知的方法如日本未审专利申请2002-88157和日本未审专利申请2002-88245中所示的方法制造，并且例如，可以使用市场上可买到的由Konishi Chemical Ind.Co.，Ltd.制备的材料。金属化合物
金属化合物可以是由以下通式表示的金属烷氧基化物化合物：
M(OR)n
其中M表示周期表3-14族的金属元素，R表示苯基或具有1-6个碳原子的烷基，和n表示1-5的整数。本文中，术语“金属元素”是指3-13族中的任意元素以及14族的锗和锡。此外，术语“周期表”是指根据IUPACInorganic Chemical Nomenclature的周期表，修订版(1989)。
金属化合物的实例包括三甲氧基铝、三乙氧基铝、三(正丙氧基)铝、三异丙氧基铝、三(正丁氧基)铝、三异丁氧基铝、三(仲丁氧基)铝、三(叔丁氧基)铝、二异丙氧基钴、三异丙氧基镝、三异丙氧基铒、三异丙氧基铕、三乙氧基铁、三异丙氧基铁、三甲氧基镓、三异丙氧基镓、三(正丙氧基)镓、三(正丙氧基)钆、四甲氧基锗、四乙氧基锗、四异丙氧基锗、四(正丙氧基)锗、四(异丁氧基)锗、四(正丁氧基)锗、四(仲丁氧基)锗、四(叔丁氧基)锗、四甲氧基铪、四乙氧基铪、四异丙氧基铪、四(叔丁氧基)铪、三异丙氧基铟、三乙氧基镧、三异丙氧基镧、二(正丁氧基)锰、五乙氧基钼、五甲氧基铌、五乙氧基铌、五异丙氧基铌、五(正丙氧基)铌、五异丁氧基铌、五(正丁氧基)铌、五(仲丁氧基)铌、三异丙氧基钕、三异丙氧基镨、三异丙氧基钪、三异丙氧基钐、四乙氧基锡、四异丙氧基锡、四(正丁氧基)锡、
五甲氧基钽、五乙氧基钽、五异丙氧基钽、五(正丙氧基)钽、五异丁氧基钽、五(正丁氧基)钽、五(仲丁氧基)钽、五(叔丁氧基)钽、四甲氧基钛、四乙氧基钛、四异丙氧基钛、四(正丙氧基)钛、四异丁氧基钛、四(正丁氧基)钛、四(仲丁氧基)钛、四(叔丁氧基)钛、五乙氧基钨、五异丙氧基钨、三乙氧基钇、三异丙氧基钇、三异丙氧基镱、二乙氧基锌、四甲氧基锆、四乙氧基锆、四异丙氧基锆、四(正丙氧基)锆、四异丁氧基锆、四(正丁氧基)锆和四(仲丁氧基)锆、和四(叔丁氧基)锆。这些当中，优选四甲氧基锗、四乙氧基锗、四异丙氧基锗、四(正丙氧基)锗、四异丁氧基锗、四(正丁氧基)锗、四(仲丁氧基)锗、四(叔丁氧基)锗、四(叔丁氧基)铪、五乙氧基钼、五乙氧基铌、五(正丙氧基)铌、五(正丁氧基)铌、五(仲丁氧基)铌五甲氧基钽、五乙氧基钽、五异丙氧基钽、五(正丙氧基)钽、五异丁氧基钽、五(正丁氧基)钽、五(仲丁氧基)钽、五(叔丁氧基)钽、四甲氧基钛、四乙氧基钛、四异丙氧基钛、四(正丙氧基)钛、四异丁氧基钛、四(正丁氧基)钛、四(仲丁氧基)钛、四(叔丁氧基)钛、五乙氧基钨和五异丙氧基钨，并且特别优选四(叔丁氧基)铪、五乙氧基铌、五(正丙氧基)铌、五(正丁氧基)铌、五(仲丁氧基)铌、五甲氧基钽、五乙氧基钽、五异丙氧基钽、五(正丙氧基)钽、五异丁氧基钽、五(正丁氧基)钽、五(仲丁氧基)钽、五(叔丁氧基)钽、四甲氧基钛、四乙氧基钛、四异丙氧基钛、四(正丙氧基)钛、四异丁氧基钛、四(正丁氧基)钛、四(仲丁氧基)钛、四(叔丁氧基)钛、五乙氧基钨和五异丙氧基钨。
制造方法
本发明的精细图案转印材料是含有聚倍半硅氧烷和金属烷氧基化物的树脂组合物。该树脂组合物可以通过直接将两种组分混合而制备，或通过首先制备聚倍半硅氧烷和金属烷氧基化物的各自溶液，然后将溶液混合而制备。
溶剂的特定实例包括：
芳族烃如苯、甲苯和二甲苯；
卤代烃如二氯甲烷和氯仿；
醚如四氢呋喃、二乙醚和二甘醇二甲醚；
酮如丙酮、甲基乙基酮、3，5，5-三甲基-2-环己烯-1-酮和甲基异丁基酮；
酯如乙酸甲酯、乙酸乙酯、乙酸异丙酯、乙酸正丙酯、乙酸丁酯、乙二醇单甲醚乙酸酯、丙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、乙酸3-甲氧基丁基酯、乙二醇单丁醚乙酸酯、二甘醇单乙醚乙酸酯和二甘醇单丁醚乙酸酯等；
极性有机溶剂如二甲亚砜和N-甲基吡咯烷酮等；
醇如甲醇、乙醇和异丙醇；
和醚醇如丙二醇单甲醚、乙二醇单乙醚、3-甲氧基丁醇、二甘醇单乙醚和二甘醇单丁醚等。所述溶剂可以单独使用，或可以以两种或更多种的组合使用。
在本发明的精细图案转印材料中，基于100重量份的聚倍半硅氧烷，转化为相应金属氧化物重量的金属烷氧基化物的重量优选为0.1-300重量份，更优选5-200重量份，和特别优选10-100重量份。
优选这样的范围，因为形成的精细图案将是稳定的。
基底
被施加精细图案转印材料的基底可以是硅基底、铝基底、玻璃基底、具有由喷溅法等形成的金属层或碳层的基底、由玻璃基底制成的硬磁盘介质、聚酰胺树脂薄膜、聚酰亚胺树脂薄膜、聚对苯二甲酸乙二酯树脂薄膜、聚对萘二甲酸乙二酯树脂薄膜或硅树脂薄膜。
施加
精细图案转印材料对基底的施加可以在标准大气中进行，或可以在惰性气体环境如氮气、氦气或氩气等中进行。施加可以在-10℃至200℃的温度范围内进行。
精细图案转转印材料对基底的施加可以在太阳光下进行，或可以在荧光照射下或UV切割(cut)荧光照射下进行。
精细图案转印材料可通过以下方法施加到基底上：使用印刷机如喷墨印刷机将转印材料印刷到基底上的方法、将转印材料直接滴到或喷涂到基底上的方法、或在整个基底表面上形成均匀转印材料薄膜的方法，所述在整个基底表面上形成均匀转印材料薄膜的方法通过将基底浸渍在转印材料溶液中，然后使涂覆的基底竖立，或者浸渍，然后以100rpm-10,000rpm，优选100rpm-6000rpm的转速使基底旋转进行。转速可以是任意的并且可以逐步改变。此外，可以将转印材料施加到基底的两个表面，或可以将其施加到仅仅一个表面，这取决于需求。
薄膜的厚度可以是0.01nm-10μm之间的任意厚度，取决于用于纳米压印的压模形状。最佳薄膜厚度可以通过评价施加步骤的条件确定，或可以使用模拟方法如纳米压印过程中的转印材料行为的有限元分析法确定。此处，术语“纳米压印”是指其中将刻有几十纳米至几百纳米线宽的凸起和凹槽的模具压在已施加到基底上的树脂材料上，并将模具图案转印到树脂材料上的技术。
在施加转印材料后，可以使基底立即进行通过纳米压印形成精细图案的步骤，或如果有必要可以通过将其置于真空或气流中干燥并预处理，所述气流例如是空气、氧气、氢气、氮气、卤气、卤代烃气体、烃气、芳族有机化合物气体、氦气或氩气等，然后进行通过纳米压印形成精细图案的步骤。此时，温度可以在-10℃至300℃的范围内。
制造精细图案
精细图案可以通过在周围环境中，或在真空下，或在惰性气体环境如氮气、氦气或氩气中形成。此时，温度可以在-10℃至300℃的范围内。精细图案的纳米压印可以在太阳光下进行，或可以在荧光照射下或在去除了紫外波长的荧光照射下进行。
由纳米压印形成精细图案的线宽为10μm或更小。
在通过纳米压印形成精细图案后，可以使基底进行下一步骤，或如果有必要可以通过在低压汞灯、高压汞灯或紫外线LED下将其置于真空或气流中干燥并预处理，所述气流例如为空气、氧气、氢气、氮气、卤气、卤代烃气体、烃气、芳族有机化合物气体、氦气或氩气等，然后进行下一步骤。此时，温度可以在-10℃至300℃的范围内。
用于制造精细图案的模具材料可以为钽、镍、钨、硅或玻璃。将模具压到已施加到基底上的转印材料上的压力为50MPa-250MPa，并且优选为100MPa-200MPa。
实施例
以下通过实施例描述本发明，但本发明不局限于这些实施例。
实施例1
将重量为0.5g的聚苯基倍半硅氧烷(产品名称：PPSQ-T，KonishiChemical Ind.Co.，Ltd.)溶于9.5g丙二醇单甲醚乙酸酯中。在室温下在氮气箱内向5g该溶液中逐滴添加重量为0.32g的五乙氧基钽，然后摇动容器从而将组分混合。在将该容器置于氮气箱48小时后，使用0.2μm的微孔过滤器过滤得到的无色透明溶液从而获得树脂组合物溶液(以下简称“精细图案转印材料(a)”)。将0.5mL该溶液滴到已置于旋涂机中的由玻璃制成的硬磁盘介质上。使硬磁盘介质以500rpm旋转10秒，然后以3000rpm旋转2秒，最后以5000rpm旋转20秒，由此在该硬磁盘介质的一个表面上形成精细图案转印材料(a)的薄膜。通过使用压印机挤压(在118MPa下)薄膜与镍模使精细图案形成在硬磁盘介质上的精细图案转印材料(a)中。当使硬磁盘介质破碎并使用场致发射扫描电子显微镜观察横截面时，测定出精细图案形成在精细图案转印材料(a)中，如图1所示。此外，将精细图案形成在其上的精细图案转印材料(a)中的硬磁盘介质在250℃下加热一个小时，然后观察横截面。测定出已形成的精细图案保持不变，如图2所示。
注意，上面使用的模具的线宽为120nm且间隔宽为60nm。术语“线宽”是指转印的凸起的线宽，和术语“间隔宽”是指转印的凹槽的线宽。
实施例2
使用和实施例1相同的方法，在硬磁盘介质上形成精细图案转印材料(a)的薄膜。在将硬磁盘介质在160℃下加热1小时后，通过在室温下使用压印机挤压(在118MPa下)薄膜和镍模使精细图案形成在硬磁盘介质上的精细图案转印材料(a)中。当使硬磁盘介质破碎并观察到横截面时，测定出形成了精细图案，如图3所示。此外，将精细图案形成在其上的精细图案转印材料(a)中的硬磁盘介质在250℃下另外加热一个小时，然后观察横截面。测定出已形成的精细图案即使在高温加热处理后也保持不变，如图4所示。
实施例3
用与实施例1和实施例2相似的方式制备精细图案转印材料(b)的溶液，不同在于使用0.14g五乙氧基钽，然后形成精细图案并观察。结果如表1所示。
实施例4
用与实施例1和实施例2相似的方式制备精细图案转印材料(c)的溶液，不同在于使用0.23g五乙氧基钽，然后形成精细图案并观察。结果如表1所示。
实施例5
用与实施例1和实施例2相似的方式制备精细图案转印材料(d)的溶液，不同在于使用0.46g五乙氧基钽，然后形成精细图案并观察。结果如表1所示。
实施例6
用与实施例1和实施例2相似的方式制备精细图案转印材料(e)的溶液，不同在于使用0.12g五(正丁氧基)钽，然后形成精细图案并观察。结果如表1所示。
实施例7
用与实施例1和实施例2相似的方式制备精细图案转印材料(f)的溶液，不同在于使用0.09g五乙氧基钨，然后形成精细图案并观察。结果如表1所示。
实施例8
用与实施例1和实施例2相似的方式制备精细图案转印材料(g)的溶液，不同在于使用0.15g五乙氧基钨，然后形成精细图案并观察。结果如表1所示。
实施例9
用与实施例1和实施例2相似的方式制备精细图案转印材料(h)的溶液，不同在于使用0.20g五乙氧基钨，然后形成精细图案并观察。结果如表1所示。
对比例1
将重量为0.5g的聚苯基倍半硅氧烷(产品名称：PPSQ-T，KonishiChemicalInd.Co.，Ltd.)溶于9.5g丙二醇单甲醚乙酸酯中。将0.5mL该溶液(以下简称“精细图案转印材料(i)”)滴到已置于旋涂机中的由玻璃制成的硬磁盘介质上。使硬磁盘介质以500rpm旋转10秒，然后以3000rpm旋转2秒，最后以5000rpm旋转20秒，由此在该硬磁盘介质的一个表面上形成树脂组合物(i)的薄膜。通过使用压印机挤压(在118MPa下)薄膜与镍模使精细图案形成在硬磁盘介质上的精细图案转印材料(i)中。当使硬磁盘介质破碎并使用场致发射扫描电子显微镜观察横截面时，测定出精细图案形成在精细图案转印材料(i)中。然而，在250℃下加热1小时后观察横截面时，测定出已形成的精细图案在热处理中毁坏。结果如表1所示。
对比例2
与对比例1相似，在硬磁盘介质上形成精细图案转印材料(i)的薄膜。然后将硬磁盘介质在160℃下加热1小时后，然后通过在室温下使用压印机挤压(在118MPa下)薄膜与镍模使精细图案形成在硬磁盘介质上。当使用场致发射扫描电子显微镜观察横截面时，测定出形成了精细图案。然而，在250℃下加热1小时后同样观察横截面时，测定出已形成的精细图案在热处理中毁坏。结果如表1所示。
工业实用性
本发明的精细图案转印材料显著地改善了耐热性，并且可以使精细图案形状稳定地保持在纳米压印过的基底上，因此可以广泛用在半导体制造工艺和使用垂直磁记录方法的图案介质化制造工艺中。
Claims (2)
1.一种用于纳米压印的透明的精细图案转印材料，包含有机硅化合物和由以下式(1)表示的金属化合物：
M(OR)n (1)
其中M表示Nb或Ta，R表示甲基、乙基、丙基、异丙基、正丁基、仲丁基或叔丁基，和n表示1-5的整数，或者M(OR)n表示五乙氧基钨或五异丙氧基钨，
其中所述有机硅化合物是聚倍半硅氧烷化合物。
2.根据权利要求1的透明的精细图案转印材料，其中所述有机硅化合物是聚苯基倍半硅氧烷或聚苯乙烯基倍半硅氧烷，且所述金属化合物是五乙氧基钽、五(正丁氧基)钽、五乙氧基钨或五异丙氧基钨。
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| JP2007030805A JP5189772B2 (ja) | 2007-02-09 | 2007-02-09 | 微細パターン転写材料 |
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| Country | Link |
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| US (1) | US8476361B2 (zh) |
| EP (1) | EP2111566B1 (zh) |
| JP (1) | JP5189772B2 (zh) |
| KR (1) | KR101095797B1 (zh) |
| CN (1) | CN101606101B (zh) |
| AT (1) | ATE478360T1 (zh) |
| DE (1) | DE602008002222D1 (zh) |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395512A (zh) * | 2000-01-13 | 2003-02-05 | 新材料公共服务公司研究所 | 通过触变层压花制备微结构表面浮雕的方法 |
| CN1457293A (zh) * | 2001-02-28 | 2003-11-19 | 日本板硝子株式会社 | 具有规定表面形状的物品及其制造方法 |
| CN1653391A (zh) * | 2002-04-17 | 2005-08-10 | 科莱恩有限公司 | 纳米压印光刻胶 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3381945B2 (ja) * | 1992-10-05 | 2003-03-04 | 日本板硝子株式会社 | 基板上に微細な凹凸パターンを形成する方法 |
| US7301595B2 (en) | 1997-10-01 | 2007-11-27 | Sanyo Electric Co., Ltd. | Vertically aligned liquid crystal display |
| JP3940546B2 (ja) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
| JP2002088157A (ja) | 2000-09-12 | 2002-03-27 | Kanegafuchi Chem Ind Co Ltd | スチリル基を置換基として含むラダー型シルセスキオキサン化合物およびその製造方法 |
| JP2002088245A (ja) | 2000-09-14 | 2002-03-27 | Kanegafuchi Chem Ind Co Ltd | 硬化性組成物及びそれを用いた成形体の作製方法 |
| JP4208447B2 (ja) | 2001-09-26 | 2009-01-14 | 独立行政法人科学技術振興機構 | Ｓｏｇを用いた室温ナノ−インプリント−リソグラフィー |
| JP2006110956A (ja) * | 2004-10-18 | 2006-04-27 | Kaneka Corp | ポリイミド樹脂微細パターンの成形方法 |
| JP2006168147A (ja) * | 2004-12-15 | 2006-06-29 | Aitesu:Kk | 有機無機ハイブリッド材料とナノインプリント技術を用いた微細構造体の製造方法および微細構造体 |
| JP4497014B2 (ja) | 2005-04-01 | 2010-07-07 | セイコーエプソン株式会社 | 偏光分離素子の製造方法 |
| JP4649262B2 (ja) | 2005-04-19 | 2011-03-09 | 株式会社東芝 | 磁気記録媒体の製造方法 |
-
2007
- 2007-02-09 JP JP2007030805A patent/JP5189772B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-05 TW TW097104648A patent/TWI439493B/zh not_active IP Right Cessation
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- 2008-02-07 EP EP08711310A patent/EP2111566B1/en not_active Not-in-force
- 2008-02-07 DE DE602008002222T patent/DE602008002222D1/de active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395512A (zh) * | 2000-01-13 | 2003-02-05 | 新材料公共服务公司研究所 | 通过触变层压花制备微结构表面浮雕的方法 |
| CN1457293A (zh) * | 2001-02-28 | 2003-11-19 | 日本板硝子株式会社 | 具有规定表面形状的物品及其制造方法 |
| CN1653391A (zh) * | 2002-04-17 | 2005-08-10 | 科莱恩有限公司 | 纳米压印光刻胶 |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2003-100609A 2003.04.04 |
| JP特开2006-110956A 2006.04.27 |
| JP特开2006-285017A 2006.10.19 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2111566A2 (en) | 2009-10-28 |
| EP2111566B1 (en) | 2010-08-18 |
| WO2008099903A3 (en) | 2008-12-24 |
| KR101095797B1 (ko) | 2011-12-21 |
| TWI439493B (zh) | 2014-06-01 |
| JP5189772B2 (ja) | 2013-04-24 |
| WO2008099903A2 (en) | 2008-08-21 |
| US20100093907A1 (en) | 2010-04-15 |
| JP2008194894A (ja) | 2008-08-28 |
| CN101606101A (zh) | 2009-12-16 |
| US8476361B2 (en) | 2013-07-02 |
| TW200904856A (en) | 2009-02-01 |
| KR20090128409A (ko) | 2009-12-15 |
| DE602008002222D1 (de) | 2010-09-30 |
| ATE478360T1 (de) | 2010-09-15 |
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